CN115347071A - Silicon/perovskite three-terminal laminated solar cell structure and preparation method - Google Patents

Silicon/perovskite three-terminal laminated solar cell structure and preparation method Download PDF

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CN115347071A
CN115347071A CN202110515334.2A CN202110515334A CN115347071A CN 115347071 A CN115347071 A CN 115347071A CN 202110515334 A CN202110515334 A CN 202110515334A CN 115347071 A CN115347071 A CN 115347071A
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perovskite
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杨颖�
周玉荣
尚佳丞
王�琦
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University of Chinese Academy of Sciences
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Abstract

The invention discloses a silicon/perovskite three-terminal laminated solar cell structure and a preparation method thereof. The structure of the perovskite top layer solar cell unit is sequentially provided with a first metal electrode layer, a first reduction reflection layer, a first transparent conductive oxide layer, a first transparent oxide buffer layer, a first transmission layer, a first passivation layer, a perovskite absorption layer and a second transmission layer from top to bottom. The silicon bottom cell and the perovskite top cell of the silicon/perovskite three-terminal laminated solar cell have three-terminal laminated cell structures, the current matching requirement of the two-terminal laminated cells is not met, the photoelectric conversion efficiency higher than that of a sub-cell can be obtained, the preparation process is simple, and the preparation cost is low.

Description

Silicon/perovskite three-terminal laminated solar cell structure and preparation method
Technical Field
The invention relates to the technical field of solar cell structure design and production preparation, in particular to a structure of a silicon/perovskite laminated cell and a preparation method thereof.
Background
The perovskite solar cell is a research hotspot in the photovoltaic field in recent years, the efficiency of the perovskite solar cell is improved from less than 3% to 25.5% in a short time of 10 years, and the perovskite solar cell is the solar cell with the fastest efficiency improvement. The perovskite material and the device thereof not only have the advantages of good comprehensive performance, high extinction coefficient, proper band gap width, higher open-circuit voltage and other physical characteristics, but also have simple structure, mild preparation conditions and simple and convenient preparation process in production and preparation, thereby being widely concerned.
Limited by the SQ theoretical efficiency limit, it is not easy to greatly improve the efficiency of single crystal silicon or perovskite cells, and the combination of the two to form a laminated cell is expected to make the conversion efficiency break through the SQ limit of the single crystal cell. Silicon mostly converts the infrared/near infrared of sunlight into electrical energy, while perovskite compounds primarily utilize the visible portion of the spectrum. Thus, a tandem solar cell made of silicon and perovskite can achieve higher efficiency than a single cell alone.
The perovskite/silicon laminated cell reported in the current research generally adopts a two-terminal structure that top and bottom cells are connected in series, or a four-terminal structure that the top and bottom cells are independent of each other, as shown in fig. 1 and fig. 2. According to the variation relation of theoretical limit efficiency of the battery with the band gap of the light absorption layer of the top battery, the optimal band gap of the light absorption layer of the top battery of the battery at two ends is 1.73eV, and the optimal band gaps of the light absorption layer of the top battery of the battery at three ends and the light absorption layer of the top battery of the battery at four ends are 1.8eV.
As shown in fig. 1, the structure of the silicon/perovskite tandem cell with two ends is schematically shown. The two-end cell sequentially comprises a metal electrode A, a transparent conducting layer B, a perovskite absorbing layer C, a tunneling layer D, a silicon cell E and a back electrode F from top to bottom. The theoretical limit efficiency of the two-end cell is obviously changed along with the band gap of the top cell, so that the band gap of the perovskite material needs to be doped and regulated to be about 1.6-1.8eV. And the transparent conducting layer and the emitter in the cell structures at the two ends, and the back field layer have certain parasitic absorption, which can affect the efficiency of the device. And because the top cell and the bottom cell are in a series structure, spectra need to be reasonably distributed, the currents of the top cell and the bottom cell are matched, the maximum output current is achieved, namely the two sub-cells are mutually limited, and the final output current is based on the sub-cell with the smaller current, so that the conditions such as the selection and the thickness of perovskite materials are limited to a certain extent.
As shown in fig. 2, the structure of the silicon/perovskite tandem cell with four terminals is schematically shown. The four-terminal structure comprises two mechanically stacked subcells which are independently placed and connected and can be independently maintained at the maximum power point, and the top cell and the bottom cell are connected through a tunneling junction with high efficiency, so that more photons can reach the bottom cell. The top cell mainly comprises a transparent conducting layer B, a perovskite absorbing layer C and a transparent conducting layer G from top to bottom. The bottom cell mainly comprises a metal electrode H, a transparent conducting layer K, a silicon cell E and a back electrode F from top to bottom. The two sub-cells of the four-terminal cell do not influence each other in the preparation process, and the condition of current matching is not required to be met. However, transparent conductive layers are used as electrode materials on both sides of the top cell and the light receiving surface of the bottom cell of the four-terminal cell, which is not favorable for reducing the cost of the cell.
Disclosure of Invention
The invention aims to provide a structure and a preparation method for preparing a three-terminal laminated solar cell, wherein the three-terminal laminated solar cell is prepared by taking a back contact crystalline silicon solar cell as a bottom cell and combining a wide-band-gap perovskite top cell.
The three-terminal laminated cell with the structure has the advantages of two-terminal laminated cells and four-terminal laminated cells, is simple in structure, insensitive to the change of the device efficiency along with the band gap of the light absorption layer of the top cell, and is a laminated cell scheme with high efficiency and potential.
The invention is realized in such a way, and provides a three-terminal laminated cell structure of silicon/perovskite and a preparation method thereof.
Furthermore, the band gap of the perovskite absorption layer of the perovskite battery is controlled to be about 1.6-1.8eV.
Furthermore, the structure of the perovskite top layer solar cell unit is sequentially provided with a first metal electrode layer, a first reflection reducing layer, a first transparent conducting layer, a first buffer layer, a first transmission layer, a first passivation layer, a perovskite absorption layer and a second transmission layer from top to bottom.
Further, the silicon cell is a back contact silicon solar cell structure.
Further, the silicon heterojunction battery unit structure sequentially comprises a crystalline silicon layer, a second passivation layer, a third transmission layer, a fourth transmission layer and a second electrode layer from top to bottom.
The structure of the silicon/perovskite three-terminal laminated solar cell can realize the effective transmission of electrons or holes at the part of the top cell, and simultaneously realize the transmission of the electrons and the holes at the silicon cell unit, thereby realizing the structure of the three-terminal laminated solar cell.
The invention has the advantages that the effective absorption of different wavelengths can be realized according to the absorption conditions of different absorption layers, thereby obtaining better battery efficiency than that of two sub-batteries.
The invention does not need to strictly regulate and control the band gap of the material to meet the current matching problem of the two sub-cells, and the photocurrents of the two sub-cells are independent.
The preparation structure and conditions are simple, and the preparation cost of the battery can be effectively reduced.
Drawings
The drawings are intended to provide further supplementary explanation of the structure of the present invention.
FIG. 1 is a schematic structural diagram of a conventional silicon/perovskite two-terminal tandem solar cell;
FIG. 2 is a schematic structural diagram of a conventional silicon/perovskite four-terminal tandem solar cell;
FIG. 3 is a schematic structural diagram of a silicon/perovskite three-terminal tandem solar cell of the present invention;
FIG. 4 is another schematic structural diagram of a silicon/perovskite three-terminal tandem solar cell of the present invention;
fig. 5 is a schematic diagram of a transmission layer structure of a back contact silicon battery cell according to the present invention.
Detailed Description
In order to make the objects, technical problems and advantages of the embodiments of the present invention more apparent, a complete description is provided below with reference to the accompanying drawings and technical solutions of the embodiments of the present invention. It should be noted that the specific embodiments described herein are some, but not all embodiments of the invention.
Referring to the drawings, the silicon/perovskite three-terminal tandem solar cell of the invention mainly comprises a perovskite top layer solar cell unit as a top cell and a silicon solar cell unit as a bottom cell.
The layers are explained in order from top to bottom according to the schematic structural diagram shown in the drawing.
Electrode material:
the electrode of the invention essentially comprises two parts, one being a first metal electrode (1) for a perovskite-type top cell and the other being a second metal electrode (13) for a silicon-based bottom cell.
The first electrode material of the top cell typically takes the form of a conductive grid line. The back electrode is usually a square template or a template of conductive grid lines. The electrode material can be any one of gold, silver, aluminum, copper, tin, magnesium, aluminum and the like or a composite electrode material consisting of any different metals.
The top and back electrodes may be prepared by a thermal evaporation method or a screen printing method, but are not limited to the two methods mentioned.
According to the size of the prepared laminated cell sample, the effective area of the grid line template of the top electrode selected by the invention is 1cm by 1cm 2 . The stencil for the back electrode was 1cm by 1cm.
The thickness of the electrode is regulated according to different preparation methods, and is generally 200nm-500nm. For example, for the thermal evaporation method, the amount of the metal to be evaporated, the height of the sample, the current and voltage for evaporation need to be controlled to adjust the thickness of the evaporation. The thickness of the silk-screen printing needs to control the conditions of printing dosage, sample height, pressure and the like.
Antireflection layer (2):
in a stacked device, reflection loss accounts for a large part of optical loss, and the antireflection layer can reduce light reflection and increase the amount of light transmitted through the element to increase the optical lossThe design of the antireflective layer is extremely important in the cell structure. The reflectivity of the antireflective layer material needs to be between that of perovskite and air, and commonly used materials are LiF and MgF 2 And fluoride material, any one of Transparent Conductive Oxide (TCO), silicon nitride, or Polydimethylsiloxane (PDMS). Common preparation methods are sol-gel method, chemical vapor deposition method, sputtering method, electron beam evaporation and the like, and any one of methods in the art for preparing the antireflective material may be used without limiting the preparation methods to the above-mentioned ones.
Transparent conductive layer (3):
for a thin film solar cell, the middle semiconductor layer has almost no lateral conductivity, so that it is necessary to use a transparent conductive film to effectively collect the current of the cell, and the transparent conductive film has functions of high transmittance and anti-reflection to allow most of the light to enter the absorption layer. The material is mainly some transparent conductive oxide films, such as Indium Tin Oxide (ITO), indium Zinc Oxide (IZO), aluminum-doped zinc oxide (AZO), tungsten-doped indium oxide (IWO), zirconium-doped indium oxide (IZOl) and the like, and the thickness is 100nm-300nm.
The transparent oxide conductive layer of the present invention can be prepared by conventional methods in the art, such as magnetron sputtering, chemical vapor deposition, electron beam evaporation, and the like, including but not limited to the above-mentioned several preparation methods.
Buffer layer (4):
the buffer layer mainly plays a role in protecting the transmission layer structure to a certain extent when the transparent conductive layer is prepared, but cannot negatively affect the overall battery performance, so that the buffer layer needs to have certain conductivity and good transmittance, and the preparation conditions are mild.
The buffer layer employed in the present invention may be a transparent conductive oxide such as any one of molybdenum oxide, tin oxide, vanadium oxide, or tungsten oxide. The conductivity of the oxide has a certain relationship with the transmittance and the thickness, and the preferred thickness of the present invention is 20nm to 60 nm.
The molybdenum oxide prepared by the present invention can be prepared by any one of the methods for preparing transparent oxides in the art, such as thermal evaporation, thermal reaction evaporation, and electron beam evaporation, but is not limited to the above-mentioned methods.
Perovskite battery cell:
the perovskite battery mainly comprises an electron transport layer, a perovskite absorption layer and a hole transport layer.
Further, to optimize the cell performance of the perovskite cell, a passivation layer may be added to modify the problem of interface defects between the perovskite absorption layer and the transport layer.
Further, perovskite cells may be classified into formal (p-i-n) and trans (n-i-p) structures according to their structures.
Further, in the following embodiment, the above two different structures will be specifically described.
The perovskite absorption layer (7) has the structure ABX3,
a is an organic or inorganic monovalent cation, including but not limited to methylammonium Cation (CH) 3 NH 3 + ) Formamidine cation (NH) 2 CHNH 2 + ) Cesium cation (Cs) + ) Rubidium cation (Rb) + ) Or a combination of the above ions in a certain proportion;
b is any one of a transition metal and a divalent metal cation of a group I3 to I5 element, such as a lead cation (Pb) 2+ ) Tin cation (Sn) 2+ ) Germanium cation (Ge) 2+ ) Copper cation (Cu) 2+ ) The like or combinations thereof;
x includes but is not limited to chloride ion (Cl) - ) Bromine ion (Br) - ) Iodide ion (I) - ) Halogen anions or a combination of the anions according to a certain proportion.
The present invention preferentially uses a wide band gap perovskite material, and the band gap is controlled to be as much as 1.6-1.8eV according to requirements, so that the perovskite material is selected from the group consisting of but not limited to Cs x FA y MA 1-x-y PbI z Br 3-z Wherein x is more than or equal to 0 and less than or equal to 0.2,0.5 and less than or equal to 0.9,2 and less than or equal to z and less than or equal to 3, and x + y is more than or equal to 0.5 and less than or equal to 1.
The perovskite absorption layer can be prepared by any method available in the art, including but not limited to spin coating, evaporation, one-step, two-step, anti-solvent, and the like.
By optimizing the thickness of the perovskite material, the optimal thickness of the perovskite material is controlled to be between 400nm and 1000nm.
The electron transport layer material refers to a material capable of accepting negatively charged electrons and transporting electrons, and a semiconductor material generally having a high electron affinity and ion potential is used as the electron transport layer material.
Further, the electron transport layer and the perovskite layer should satisfy energy level matching to form an electron selective contact.
The electron transport layer material can be any one of n-type oxide or n-type organic matter or their combination commonly used in the field of perovskite battery, the n-type oxygen oxide includes but is not limited to titanium dioxide (TiO 2), tin dioxide (SnO 2), zinc oxide (ZnO) and other materials, the n-type organic matter includes but is not limited to fullerene derivatives ([ 6,6] -phenyl-C61-butyl acid methyl ester, PC61 BM) and carbon 60 (C60), the thickness is controlled between 20nm and 100nm, and the preparation method can be any one of spin coating, thermal evaporation, atomic layer deposition, reactive plasma deposition, sputtering and the like.
The hole transport layer functions to extract holes in the perovskite and to transfer the holes to the electrode.
Further, the hole transport layer material used in the present invention should satisfy valence band matching and have ideal hole mobility, and have blocking ability to electrons.
The hole transport layer is typically composed of a p-type semiconductor material common to the perovskite battery art. Common hole transport materials mainly include three major classes of organic polymers, organic small molecules and inorganic compounds. The organic polymer may be poly 3,4-ethylenedioxythiophene: polystyrene sulfonate (PEDOT: PSS), poly [ bis (4-phenyl) (2,4,6-trimethylphenyl) amine ] (PTAA), poly (3-hexylthiophene-2,5-diyl) (P3 HT). The small organic molecule can be at least one of 2,2',7,7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene (spiro-MeOTAD), tetrathiafulvalene (tetrathiafulvalene)). The inorganic compound includes, but is not limited to, copper oxide (CuO), copper iodide (CuI), nickel oxide (NiOx), copper thiocyanide (CuSCN), and the like or combinations thereof, and the thickness is controlled to be between 100nm and 300nm. The preparation method can be any one of a spin coating method, a thermal reaction evaporation method, an atomic layer deposition method, a reaction plasma deposition method, a magnetron sputtering method and the like.
Silicon bottom cell:
the silicon-based solar cell mainly comprises any one of a heterojunction cell, a back contact cell, a PERC back passivation cell or a Top-con cell.
The silicon bottom cell sequentially comprises a crystalline silicon layer, a second passivation layer, a third transmission layer, a fourth transmission layer and a second electrode layer from top to bottom.
The crystal silicon layer can be an n-type or p-type crystal silicon wafer and has the thickness of 200-300 mu m. The silicon wafer substrate can be any one of a double-sided polished, single-sided textured or double-sided textured structure.
The passivation layer passivates defects on the surface of the crystalline silicon substrate, and the passivation material can be any one of amorphous silicon, silicon oxide, aluminum oxide and the like and has the thickness of 5nm-15nm.
The material of the transport layer is any one of the n-type or p-type semiconductor materials mentioned above. The preparation method of the transmission layer material can be any one of a thermal reaction evaporation method, an atomic layer deposition method, a reaction plasma deposition method, a magnetron sputtering method and the like.
As shown in fig. 5, a complementary stencil is used between the two transmission layers, and any method in the art can be used to prepare a metal electrode having the same shape as the transmission layer by evaporation, screen printing, or the like.
The structure of the silicon/perovskite three-terminal laminated solar cell is further described by combining the specific examples as follows:
example 1
As shown in FIG. 3, the invention provides a preparation method of a silicon/perovskite three-terminal laminated solar cell
Step 1, selecting a proper n-type double-sided polished silicon wafer for cleaning.
And 2, depositing aluminum oxide on the upper surface and the lower surface of the silicon chip by using an atomic layer deposition method for passivation, wherein the thickness is 1nm-5nm.
And 3, shielding by using a template, and preparing the tin dioxide electron transport layer with the thickness of 20-80 nm on the lower surface by a thermal reaction evaporation method. On the basis of the above-mentioned method, the magnesium and aluminium electrodes with identical form are evaporated by using thermal evaporation method, and their thicknesses are respectively 100nm-200nm and 300nm-500nm.
And 4, preparing a molybdenum oxide hole transport layer by thermal reaction evaporation by using the complementary template of the template, wherein the thickness of the molybdenum oxide hole transport layer is 10-20nm. On the basis, the magnesium and aluminum electrodes with the same shape are evaporated by a thermal evaporation method, and the thicknesses of the electrodes are respectively 10nm-30nm and 300nm-500nm.
And 5, depositing a layer of tin dioxide film with the thickness of 10nm-30nm on the upper surface of the passivated crystalline silicon substrate at the temperature of 150 ℃ by using an atomic layer deposition method to finish the preparation of the electron transport layer.
And 6, dissolving lead iodide, methylamine iodide, cesium bromide and formamidine iodide in a DMSO/DMF solution according to a certain ratio, fully stirring and dissolving, and filtering to obtain the perovskite precursor solution. And (3) dropwise adding the anti-solvent chlorobenzene when the spin coating speed is 5000 rpm reaches 8 seconds, and heating the solution on a heating table at 100 ℃ for 10 minutes when the spin coating is continued for 30 seconds to finish the preparation of the perovskite absorption layer, wherein the thickness of the perovskite absorption layer is 500-1000 nm.
And 7, dissolving polymethyl methacrylate (PMMA) into Chlorobenzene (CB) solution according to the proportion of 5mg/ml to obtain passivation layer solution, spin-coating for 30 seconds at the speed of 5000 revolutions per minute, and heating for 10 minutes on a heating table at the temperature of 100 ℃ to finish the preparation of the passivation layer between the perovskite and the hole transport layer, wherein the thickness is 50nm-100nm.
And 8, doping the lithium bis (trifluoromethanesulfonyl) imide (LiTFSI), 4-tert-butylpyridine (TBP) and cobalt (III) complex into the spiro-MeOTAD according to a certain proportion to obtain a hole transport layer solution, and spin-coating at the speed of 4000 revolutions per minute for 30 seconds to prepare a hole transport layer with the thickness of 100nm-200nm.
And 9, depositing a layer of molybdenum oxide on the surface of the hole transport layer as a buffer layer by using a thermal reaction evaporation method, wherein the thickness of the molybdenum oxide is 20nm-40nm.
Step 10, preparing a layer of aluminum-doped zinc oxide on the molybdenum oxide buffer layer by using a magnetron sputtering method, wherein the thickness of the aluminum-doped zinc oxide is 150nm-250nm.
And 11, evaporating 10-30nm MgF2 as an antireflection layer by using an electron beam.
And step 12, preparing a silver grid line on the antireflection layer by using a conductive grid line template through a thermal evaporation method, wherein the thickness of the silver grid line is 150nm-300nm.
Example 2
As shown in FIG. 4, the invention provides another preparation method of a silicon/perovskite three-terminal tandem solar cell
Step 1, selecting proper p-type double-sided polished silicon wafers for cleaning
And 2, depositing amorphous silicon on the upper surface and the lower surface of the silicon chip by using a plasma deposition method to prepare a passivation layer, wherein the thickness is 5-15nm.
And 3, shielding by using a template, and preparing the tin dioxide electron transport layer with the thickness of 10nm-30nm on the lower surface by a thermal reaction evaporation method. On the basis, the magnesium electrode and the aluminum electrode with the same shape are evaporated by a thermal evaporation method, and the thicknesses of the electrodes are respectively 10nm-30nm and 200nm-300nm.
And 4, preparing a molybdenum oxide hole transport layer with the thickness of 10-20nm by using the complementary template of the template and evaporating through thermal reaction in the same method. On the basis, the magnesium electrode and the aluminum electrode with the same shape are evaporated by a thermal evaporation method, and the thicknesses of the electrodes are respectively 10nm-30nm and 200nm-300nm.
And 5, weighing a certain amount of PTAA, dissolving the PTAA in the CB solution according to a certain proportion, fully stirring to obtain a solution of the hole transport layer, spin-coating the surface of the silicon wafer at the rotating speed of 4000 revolutions per minute, keeping rotating for 30 seconds, and heating on a heating table at 140 ℃ for 3 minutes to obtain the hole transport layer.
And 6, dissolving lead iodide, methylamine iodide, cesium bromide and formamidine iodide in a dimethyl sulfoxide (DMSO)/N, N-Dimethylformamide (DMF) solution according to a certain ratio, fully stirring and dissolving, and filtering to obtain the perovskite precursor solution. And (3) dropwise adding an anti-solvent CB when the coating is carried out at the speed of 5000 revolutions per minute for 20 seconds, and heating the coating on a heating table at the temperature of 100 ℃ for 50 minutes when the coating is continuously carried out for 30 seconds to finish the preparation of the perovskite absorption layer, wherein the thickness is preferably 500nm-900nm.
And 7, thermally evaporating 20nm-40nm PCBM and 10-30nm C60 on the perovskite thin film in sequence.
And 8, depositing a layer of tin dioxide on the surface as a buffer layer by using a thermal reaction evaporation method, wherein the thickness is 10nm-20nm.
And 9, preparing a layer of indium zinc oxide IZO on the tin oxide buffer layer by using a magnetron sputtering method, wherein the thickness of the indium zinc oxide IZO is 150nm.
And step 10, evaporating 5-15nm LiF as an anti-reflection layer by using a thermal evaporation method.
And step 11, preparing a silver grid line on the antireflection layer by using a conductive grid line template through a thermal evaporation method, wherein the thickness of the silver grid line is 150nm-300nm.
Example 3
As shown in FIG. 4, the present invention provides a third method for preparing a silicon/perovskite three-terminal tandem solar cell
Step 1, selecting proper p-type double-sided polished silicon wafers for cleaning
And 2, depositing amorphous silicon on the upper surface and the lower surface of the silicon chip by using a plasma deposition method to prepare a passivation layer, wherein the thickness is 5-15nm.
And 3, shielding by using the template, and preparing the tin dioxide electron transport layer with the thickness of 10nm-30nm on the lower surface by a thermal reaction evaporation method. On the basis, the magnesium electrode and the aluminum electrode with the same shape are evaporated by a thermal evaporation method, and the thicknesses of the electrodes are respectively 10nm-30nm and 200nm-300nm.
And 4, preparing a molybdenum oxide hole transport layer with the thickness of 10-20nm by using the complementary template of the template and evaporating through thermal reaction in the same method. On the basis of the above-mentioned method, the magnesium and aluminium electrodes with identical form are evaporated by using thermal evaporation method, and their thicknesses are respectively 10nm-30nm and 200nm-300nm.
And 5, fully mixing the aqueous solution of PEDOT and PSS with the DMSO solution according to a certain proportion, fully stirring to obtain a solution of a hole transport layer, spin-coating the surface of the silicon wafer at the rotating speed of 2000 rpm, keeping rotating for 60 seconds, and heating on a heating table at 130 ℃ for 20 minutes to obtain the hole transport layer, wherein the thickness is preferably 200nm-500nm.
And 6, dissolving lead iodide, methylamine iodide, cesium bromide and formamidine iodide in a DMSO/DMF solution according to a certain ratio, fully stirring and dissolving, and filtering to obtain the perovskite precursor solution. And (3) dropwise adding the anti-solvent chlorobenzene when the speed of 5000 revolutions per minute is reached to 20 seconds, continuously carrying out spin coating for 30 seconds, and heating on a heating table at 100 ℃ for 50 minutes to finish the preparation of the perovskite absorption layer.
And 7, thermally evaporating 20nm-40nm PCBM and 10-30nm C60 on the perovskite thin film in sequence.
And 8, depositing a layer of tin dioxide on the surface as a buffer layer by using an atomic layer deposition method, wherein the thickness can be 5nm-10 nm.
And 9, preparing a layer of IZO on the tin oxide buffer layer by using a magnetron sputtering method, wherein the thickness of the IZO is 150nm.
Step 10, using electron beam evaporation 3-10 nm LiF as an anti-reflection layer.
And step 11, preparing a silver grid line on the antireflection layer by using a conductive grid line template through a thermal evaporation method, wherein the thickness of the silver grid line is 150nm-300nm.
The above description is only a preferred embodiment of the present invention, but is not limited thereto. The claims should be accorded the full scope of the invention. It is intended that all such modifications and alterations be included within the scope of this invention, to the extent they do not depart from the details of this patent, as defined by the following claims.

Claims (10)

1. A silicon/perovskite three-terminal laminated solar cell is characterized in that a perovskite top layer solar cell unit and a back contact silicon heterojunction solar cell unit are sequentially arranged from top to bottom.
2. The silicon/perovskite three-terminal tandem solar cell according to claim 1, wherein: the perovskite top layer solar cell unit is structurally sequentially provided with a first metal electrode layer (1), a first reflection reducing layer (2), a first transparent conducting layer (3), a first buffer layer (4), a first transmission layer (5), a first passivation layer (6), a perovskite absorption layer (7) and a second transmission layer (8) from top to bottom.
3. A silicon/perovskite three-terminal tandem solar cell according to claim 2, characterized in that: the energy gap of the perovskite absorption layer (7) is 1.6-1.8eV.
4. A silicon/perovskite three-terminal tandem solar cell according to claim 2, characterized in that: the refractive index of the anti-reflection layer material (2) is between that of air and perovskite, and the selected material can be fluoride materials such as LiF and MgF2, or any one of Transparent Conductive Oxide (TCO), silicon nitride and Polydimethylsiloxane (PDMS).
5. The silicon/perovskite three-terminal tandem solar cell according to claim 2, wherein: the transparent conductive layer (3) can effectively collect the current of the battery and has high penetration, and the selected material is preferably a transparent conductive oxide film, such as any one of Indium Tin Oxide (ITO), indium Zinc Oxide (IZO), aluminum-doped zinc oxide (AZO), tungsten-doped indium oxide (IWO), zirconium-doped indium oxide (IZOl) and the like.
6. The silicon/perovskite three-terminal tandem solar cell according to claim 1, wherein: the back contact silicon battery unit is sequentially arranged into a silicon substrate (9), a passivation layer (10), a third transmission layer (11), a fourth transmission layer (12) and a second metal electrode layer (13) from top to bottom.
7. The silicon/perovskite three-terminal tandem solar cell according to claim 1, wherein: the silicon substrate (9) is an n-type crystalline silicon or p-type crystalline silicon substrate and can be any one of a double-sided polishing type structure, a single-sided texturing type structure or a double-sided texturing type structure.
8. The silicon/perovskite three-terminal tandem solar cell according to claim 7, wherein: the passivation layer (10) needs to passivate the defects on the surface of the crystalline silicon substrate, and the passivation material can be any one of amorphous silicon, silicon oxide, aluminum oxide and the like.
9. A silicon/perovskite three-terminal tandem solar cell according to claims 2 and 6, characterized in that: the n-type semiconductor material is the same as the electron transport layer, and the selected electron transport layer can be any one of titanium dioxide (TiO 2), stannic oxide (SnO 2), zinc oxide (ZnO), fullerene derivatives ([ 6,6] -phenyl-C61-butyl acid methyl ester, PC61 BM) and carbon 60 (C60).
10. A silicon/perovskite three-terminal tandem solar cell according to claims 2 and 6, characterized in that: the p-type semiconductor material is the same as the hole transport layer selection material, and the selected hole transport layer selection material can be an organic material, such as poly 3,4-ethylenedioxythiophene: polystyrene sulfonate (PEDOT: PSS), poly [ bis (4-phenyl) (2,4,6-trimethylphenyl) amine ] (PTAA), poly (3-hexylthiophene-2,5-diyl) (P3 HT) 2,2',7,7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene (spiro-MeOTAD), tetrathiafulvalene (tetrathiafulvalene)), or an inorganic compound such as any of copper oxide (CuO), cuprous iodide (CuI), nickel oxide (NiOx), and copper sulfide (CuSCN).
CN202110515334.2A 2021-05-13 2021-05-13 Silicon/perovskite three-terminal laminated solar cell structure and preparation method Pending CN115347071A (en)

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