CN115336245A - Photosensitive chip assembly, camera module and terminal equipment - Google Patents
Photosensitive chip assembly, camera module and terminal equipment Download PDFInfo
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- CN115336245A CN115336245A CN202080093815.2A CN202080093815A CN115336245A CN 115336245 A CN115336245 A CN 115336245A CN 202080093815 A CN202080093815 A CN 202080093815A CN 115336245 A CN115336245 A CN 115336245A
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Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
Abstract
The application provides a sensitization chip subassembly, module and terminal equipment of making a video recording. Wherein the chip assembly comprises: the photosensitive chip comprises a substrate, an active area and a micro-lens array, wherein the active area is positioned on the substrate, and the micro-lens array is positioned on the active area; the stress layer is arranged on the back side of the photosensitive chip, so that the photosensitive chip deforms towards the substrate of the photosensitive chip. The stress layer is arranged on the back face of the traditional photosensitive chip to control the bending direction and degree of the photosensitive chip so as to control the field curvature of the photosensitive chip, so that the bending direction of the photosensitive chip is consistent with the field curvature of the lens, and the imaging definition is improved.
Description
The application relates to the technical field of making a video recording, specifically relates to a sensitization chip subassembly, module and terminal equipment make a video recording.
The camera is an indispensable input device in electronic products such as mobile phones and tablet computers. Along with the continuous improvement of user to camera imaging quality, the pixel of camera also is bigger and bigger, requires that the area of its inside sensitization chip also is bigger and bigger.
The process of camera formation of image is mainly light signal digitization process, and this process is mainly accomplished by the module of making a video recording. The module of making a video recording mainly includes camera lens, sensitization chip and circuit board, and wherein the main part of the module of making a video recording is regarded as to the sensitization chip, and its theory of operation is: external light irradiates the surface of the photosensitive chip after passing through the lens, the photosensitive chip converts the light transmitted by the lens into an electric signal, and then the electric signal is converted into a digital signal through analog-to-digital conversion.
Among them, the quality of the photosensitive chip is an important factor affecting the imaging quality. However, as the camera has larger pixels, the area of the photosensitive chip is also larger. In addition, the thickness of the photosensitive chip cannot be increased correspondingly due to the increasingly light and thin market demand of electronic products such as mobile phones and the like. Thus resulting in a gradually increasing ratio of the area to the thickness of the photo-sensing chip.
The proportion of the area to the thickness of the photosensitive chip is gradually increased, so that the photosensitive chip is easier to deform due to temperature rise in the manufacturing process, particularly in the heating and curing process of the photosensitive chip, and the deformation is shown in figure 1.
Since the central region of the photosensitive chip protrudes upward, the photosensitive region forms a curved surface, which results in an increase in curvature of field of the photosensitive chip, the direction of the increase in curvature of field being opposite to the direction of curvature of field of the lens (i.e., curvature of field of the lens), as shown in fig. 2. The deformation direction of the photosensitive chip is opposite to the image surface of the lens, so that when the camera shoots, the middle is clear, the periphery is fuzzy, and the shooting quality is poor.
For the above problem, a method of bending the photosensitive chip itself into a cylindrical shape, a spherical shape, or a curved shape required for a lens group is generally employed. However, in the method of bending the photosensitive chip, a method of pressing the mold is generally employed. For example, as shown in fig. 3, for a spherical photosensitive chip 1100, a lower mold 002 having a spherical curved surface is provided, and the entire photosensitive chip 1100 is curved into a spherical shape by pressing the thinned photosensitive chip 1100 onto the curved surface of the lower mold through an upper mold 001 having a spherical curved surface. In addition, when the chip is molded, the chip may be formed into a curved shape. However, this method is difficult to process and not suitable for mass molding.
Disclosure of Invention
Based on this, this application aims at providing a sensitization chip subassembly, makes sensitization chip keep crooked and unanimous with the crooked direction of the actual imaging surface of camera lens in the assembling process, through the crooked degree of control sensitization chip, controls sensitization chip's field curvature to improve sensitization chip subassembly's the quality of shooing.
According to a first aspect of the present application, there is provided a photosensitive chip assembly comprising:
the photosensitive chip comprises a substrate, an active area positioned on the substrate and a micro-lens array positioned on the active area;
and the stress layer is arranged on the back side of the photosensitive chip, so that the photosensitive chip deforms towards the substrate of the photosensitive chip.
According to some embodiments of the present application, the stress layer has a thickness of 0.1um to 10um.
According to some embodiments of the present application, the thickness of the photosensitive chip is 100um to 200um.
According to some embodiments of the present application, the stress layer comprises:
a compensation film having a coefficient of thermal expansion greater than or equal to a coefficient of thermal expansion of the microlens array.
According to some embodiments of the present application, a thickness of the compensation film is greater than or equal to a thickness of the microlens array.
According to some embodiments of the present application, the material of the compensation film comprises at least one of silicon oxide, magnesium fluoride, aluminum oxide, titanium oxide.
According to some embodiments of the present application, the compensation film comprises a PVD film and/or a CVD film.
According to some embodiments of the application, the PVD film comprises at least one of a vacuum evaporated film, a magnetron sputtered film, an atomic layer deposited film.
According to some embodiments of the present application, the active region further includes a photosensitive region disposed below the microlens array, and configured to receive light from the outside to reach the front surface of the photosensitive chip;
the stress layer comprises a stress film with a preset thickness, and the stress generated in the film coating process enables the photosensitive area of the photosensitive chip to deform towards the substrate of the photosensitive chip.
According to some embodiments of the application, the stress film comprises at least one of a silicon dioxide film, a magnesium fluoride film, a silicon nitride film, an aluminum nitride film.
According to some embodiments of the application, before the stress film is coated, the back surface of the photosensitive chip is a flat surface.
According to some embodiments of the present application, a portion of the photo-sensing chip corresponding to the photo-sensing area is substantially flush with a back surface of the photo-sensing chip.
According to some embodiments of the present application, a portion of the photo-sensing chip corresponding to the photo-sensing region protrudes toward the stress film, and a distance of the protrusion ranges from 2 μm to 10 μm.
According to some embodiments of the present application, the stress film is attached to the entire back surface of the photosensitive chip.
According to some embodiments of the present application, the area of the photosensitive chip is 5mm2-40mm2.
According to some embodiments of the present application, the photosensitive chip assembly further comprises:
the first intermediate layer is arranged between the photosensitive chip and the stress layer, and the bonding performance between the first intermediate layer and the substrate and between the first intermediate layer and the stress layer is superior to that between the substrate and the stress layer.
According to some embodiments of the present application, the photosensitive chip assembly further comprises:
the second intermediate layer is arranged on the side, opposite to the photosensitive chip, of the stress layer, and the photosensitive chip assembly is bonded with the bearing plate for mounting the photosensitive chip assembly through the adhesive.
According to some embodiments of the present application, the photosensitive chip assembly further comprises:
the second intermediate layer is arranged on the side, opposite to the photosensitive chip, of the stress layer, and the photosensitive chip assembly is bonded with the bearing plate for mounting the photosensitive chip assembly through a bonding agent.
According to some embodiments of the present application, the bonding performance between the second interlayer and the stress layer and the adhesive is better than the bonding performance between the stress layer and the adhesive.
According to some embodiments of the present application, the material of the first intermediate layer comprises one or more of silicon, silicon dioxide.
According to some embodiments of the present application, the material of the second interlayer includes one or more of porous silica, titania, hydrophilic silicon coating liquid.
According to some embodiments of the application, the first intermediate layer or the second intermediate layer has a thickness of 10-20nm.
According to some embodiments of the present application, the first intermediate layer or the second intermediate layer comprises a physical vapor deposition layer and/or a chemical vapor deposition layer.
According to a second aspect of the present application, there is provided a camera module, comprising:
a lens assembly including a lens;
above-mentioned sensitization chip subassembly, with the camera lens subassembly links to each other, the field curvature of sensitization chip subassembly with the field curvature syntropy and the difference of camera lens are within 10um.
According to some embodiments of the present application, the camera module further comprises:
the photosensitive chip assembly is arranged on the bearing plate;
and the electronic element is arranged on the bearing plate.
According to some embodiments of the present application, the camera module further comprises:
the packaging component is arranged on the bearing plate, the packaging component and the bearing plate surround a cavity for accommodating the photosensitive chip assembly and the electronic element, and the packaging component is provided with a window for exposing the micro-lens array of the photosensitive chip assembly;
or
The packaging component covers the photosensitive chip component and the electronic element and is provided with a window for exposing the micro-lens array of the photosensitive chip component; and is
The packaging part is integrally formed on the bearing plate through transfer molding, injection molding or die pressing;
or
The packaging component comprises a molding part, is arranged on the bearing plate and wraps the electronic element; and
and the supporting part is arranged on the molding part, the molding part and the supporting part surround a cavity for accommodating the photosensitive chip assembly and the electronic element, and the supporting part is provided with a window for exposing the micro-lens array of the photosensitive chip assembly.
According to some embodiments of the present application, the camera module further comprises:
a filter element disposed on the encapsulation part and covering the window;
the lens assembly is mounted on the package component.
According to some embodiments of the present application, the carrier plate comprises:
the electronic element and the photosensitive chip assembly are electrically connected with the bearing plate;
or
The electronic element and the photosensitive chip assembly are arranged on the flexible circuit board and are electrically connected with the flexible circuit board; and
a reinforcing plate disposed under the flexible circuit board to support the flexible circuit board;
or
A circuit board having an opening, the electronic component being disposed on the circuit board; and
the stiffening plate sets up circuit board below, the setting of sensitization chip subassembly is in on the stiffening plate and be located in the opening, electronic component with sensitization chip subassembly with circuit board electricity is connected.
According to a third aspect of the present application, there is provided a terminal device including the above camera module.
Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without exceeding the protection scope of the present application.
FIG. 1 shows a schematic diagram of a deformation of a photo-sensing chip;
FIG. 2 is a schematic diagram showing the deformation direction of the photosensitive chip and the image plane of the lens;
FIG. 3 is a schematic diagram illustrating a process of die pressing and bending a photosensitive chip;
FIG. 4 is a schematic diagram of a conventional photosensitive chip;
FIG. 5 is a schematic view showing a bending principle in a conventional photo chip bonding curing process;
FIG. 6 is a schematic diagram illustrating a bending process during a conventional photo die bonding curing process;
FIG. 7 shows a schematic view of a photosensitive chip assembly according to a first exemplary embodiment of the present application;
FIG. 8 is a schematic view illustrating a process of bending a photosensitive chip assembly according to an exemplary embodiment of the present application;
FIG. 9 is a diagram illustrating a distance of a corresponding portion of a photosensitive region of a photosensitive chip protruding according to an exemplary embodiment of the present application.
FIG. 10 is a schematic diagram showing the same curvature direction of the photosensitive chip as the curvature direction of the lens field;
FIG. 11 shows a schematic structural diagram of a photosensitive chip assembly according to a second exemplary embodiment of the present application;
FIG. 12 shows a second schematic view of a photosensitive chip assembly according to a third exemplary embodiment of the present application;
FIG. 13 is a third schematic view of a photosensitive chip assembly according to a fourth exemplary embodiment of the present application;
FIG. 14 is a schematic view of a photosensitive chip assembly fixing structure according to an exemplary embodiment of the present application.
FIG. 15 is a schematic view of a photosensitive chip assembly holding structure according to another exemplary embodiment of the present application;
FIG. 16 is a schematic view of a camera module photo-sensing chip assembly package according to an exemplary embodiment of the present application;
FIG. 17 is a schematic view of a camera module photo-sensing chip assembly package according to another exemplary embodiment of the present application;
FIG. 18 is a second schematic view of a package of a camera module photo-sensing chip assembly according to another exemplary embodiment of the present application;
fig. 19 shows a schematic structural diagram of a camera module according to an exemplary embodiment of the present application.
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some, but not all, embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
First, the reason why the deformation direction of the photosensitive chip is opposite to the image plane of the lens will be described with reference to the structure and connection process of the conventional photosensitive chip.
Fig. 4 shows a schematic diagram of a conventional photosensitive chip structure.
As shown in fig. 4, the photosensitive chip 1100 includes a microlens array 111, a bayer color filter array 112, a photosensitive region 113, a non-photosensitive region 114 such as a circuit layer, and a silicon substrate 115 from top to bottom. The bayer color filter array 112, the photosensitive region 113, and the non-photosensitive region 114 such as a circuit layer are also referred to as active regions. For convenience of description, the photosensitive region 113, the circuit layer, etc. non-photosensitive region 114, and the silicon substrate 115 will be referred to as a silicon layer 116 hereinafter.
The microlens array 111 is generally made of an organic film, for example, an acrylic thermosetting resin, an acrylic thermoplastic resin, or the like. The materials of the photosensitive region 113, the non-photosensitive region 114 such as a circuit layer, and the silicon substrate 115 are mainly inorganic materials, and mainly silicon. The photosensitive chip 1100 and the circuit board are usually fixed by applying an adhesive and curing after heating.
Fig. 5 is a schematic view showing a bending principle in a conventional photo chip bonding curing process.
As shown in FIG. 5, heat is required during the bonding and curing process of the photo chip 1100. The microlens array 111 has a large coefficient of thermal expansion, on the order of 30 PPM. The coefficient of thermal expansion of the silicon layer 116 is around 3 PPM. The expansion coefficients of the microlens array 111 and the silicon layer 116 are too different. During the temperature rise, the microlens array 111 expands at a rate greater than that of the silicon layer, causing the periphery of the photo chip 1100 to bend downward, i.e., the central region of the photo chip 1100 to protrude upward.
Fig. 6 is a schematic view showing a bending process in a conventional photo chip bonding curing process.
In the process of adhering and fixing the photosensitive chip 1100 to the carrier plate 1200, an adhesive 900 is first applied on the carrier plate 1200. Then, the photosensitive chip 1100 is attached to the carrier plate 1200 by the adhesive 900. Next, the temperature is raised to 100 to 120 degrees celsius, so that the adhesive 900 is cured. The photosensitive chip 1100 is heated to be bent by the above-described reason in this process, the central region of the photosensitive chip 1100 is protruded upward, and the adhesive 900 is gradually cured in this process. The photosensitive chip 1100 is fixed by the adhesive 900 after being bent to a certain degree and cannot be restored to be flat. Finally, the photosensitive chip 1100 is curved convexly upward in this process, which is not in accordance with the direction of curvature of the imaging surface of the lens assembly.
The inventor provides a sensitization chip subassembly to this problem, sets up the stress layer through the dorsal part at sensitization chip, makes sensitization chip takes place deformation towards sensitization chip's basement to make sensitization chip's crooked direction unanimous with the crooked direction of camera lens imaging surface, and keep stable crooked, thereby improve the definition of formation of image.
Fig. 7 shows a schematic structural view of a photosensitive chip assembly according to a first exemplary embodiment of the present application.
As shown in FIG. 7, the photo chip assembly 1100 includes a photo chip 1100 and a stress layer 130. The stress layer 130 is disposed on the backside of the photo sensor chip 1100. According to a first example implementation of the present application, the stress layer 130 may be a compensation film having a thermal expansion coefficient greater than or equal to a thermal expansion coefficient of the microlens array 111. Therefore, in the assembly process, the expansion speed of the compensation film 130 after being heated is greater than that of the microlens array 111, the periphery of the photosensitive chip 1100 is slightly bent upwards, and the central area of the photosensitive chip 1100 is recessed downwards, so that the bending direction of the photosensitive area of the photosensitive chip 1100 is the same as the bending direction of the imaging surface of the lens.
According to some embodiments, the material of the compensation film 130 may be silicon oxide, aluminum oxide, titanium oxide, etc., and may also be magnesium fluoride, etc. The compensation film 130 may include, but is not limited to, a PVD film and/or a CVD film. The PVD film includes, but is not limited to, at least one of a vacuum evaporation film, a magnetron sputtering film, an atomic layer deposition film. The thickness of the compensation film 130 is 0.1um to 10um. The thickness of the photosensitive chip 1100 is generally 100um to 200um. The thickness of the microlens array 111 of the photosensitive chip 1100 is generally equal to the thickness of the compensation film 130, or smaller than the thickness of the compensation film 130.
In order to ensure that the thickness of the photosensitive chip assembly 1100 after adding the compensation film 130 meets the chip requirements of the general specification, the thickness of the silicon substrate 115 on the bottom side of the photosensitive chip 1100 may be ground first to ensure that the thickness of the photosensitive chip assembly 1100 after adding the stress layer 130 does not increase.
FIG. 8 shows a schematic view of a process for bending a photosensitive chip assembly according to an example embodiment of the present application.
As shown in fig. 8, in the process of heating and fixing the photosensitive chip assembly 1100, since the thermal expansion coefficient of the compensation film 130 is greater than or equal to the thermal expansion coefficient of the microlens array 111 of the photosensitive chip 1100, and the compensation film 130 is located on the back surface of the photosensitive chip 1100, the microlens array 111 is located on the front surface of the photosensitive chip 1100, and when the photosensitive chip assembly 1100 is heated, the expansion speed of the compensation film 130 is greater than or equal to the microlens array 111.
Referring to fig. 8, when the coefficient of thermal expansion of the compensation film 130 is equal to that of the microlens array 111, the expansion rates of the two are substantially the same. The photosensitive chip assembly 1100 is not substantially bent. Since the thickness of the compensation film 130 is slightly greater than the thickness of the microlens array 111, the amount of swelling of the compensation film 130 is slightly greater than the amount of swelling of the microlens array 111. At this time, the periphery of the photosensitive chip assembly 1100 may be slightly bent upward, the central region thereof may be slightly depressed downward, or substantially not bent. So that substantially no bowing of the photosensitive chip occurs herein is to be understood as meaning that the photosensitive chip assembly 1100 is flat or has a central region that is recessed downward.
As shown in fig. 8, when the thermal expansion coefficient of the compensation film 130 is larger than that of the microlens array 111, the expansion speed of the compensation film 130 is larger than that of the microlens array 111. The periphery of the die assembly 1100 is curved upward and the central area is recessed downward. At this time, the bending direction of the photo chip 1100 is identical to the bending direction of the lens imaging plane.
According to other embodiments of the present application, as shown in fig. 7, the stress layer 130 may also be a stress film and have a predetermined thickness. The stress film 130 may generate stress during the molding process, so that the photosensitive area of the photosensitive chip 110 is deformed toward the substrate (back surface) thereof. That is, the stress film 130 is plated on the backside surface of the silicon substrate, and stress is generated on the photo chip 110 during the film plating process, so that the photo region of the photo chip 110 deforms toward the backside. The predetermined thickness of the stress film 130 at this time may be determined according to the size of the photosensitive chip 110 and the size that needs to be deformed.
The stress film 130 generates stress during the film plating process, unlike the prior art. The plating process is understood as that atoms or molecules are plated on the surface of a plating body layer by layer, and stress is generated in the plating process. Instead of providing only one finished stress film, the finished stress film is attached to the back surface of the photo sensor chip 110 to generate stress on the photo sensor chip 110.
Since the photosensitive chip 110 mainly generates field curvature during the heat curing process. As shown in fig. 1, the middle region of a conventional photo-sensor chip is arched toward the front side, and both sides are tilted toward the back side. Therefore, if the stress film 130 is plated on the photo chip 110 before the photo chip 110 is heated and cured, a compressive stress is generated on the backside, so that the photo chip 110 is deformed toward the backside in advance, i.e., the photo-sensing area of the photo chip 110 and the area below the photo chip are curved and arched downward. If the photosensitive chip 110 is heated and cured, the photosensitive chip 110 has a field curvature deformation, and the stress film 130 is plated on the photosensitive chip 110, a tensile stress opposite to the deformation of the photosensitive chip 110 is generated. In principle, however, in actual production, the process of heat curing is a process of adhering the photosensitive chip to the circuit board or the reinforcing plate, and one side of the coated film needs to be adhered to the circuit board or the reinforcing plate, so in actual operation, the coated film is often selected to be firstly and then cured by heat.
The reason why the stress film 130 generates stress to the photosensitive chip 110 can be explained from a microscopic level. During the coating process of the photosensitive chip 110, as the film crystallites grow larger, the effect of surface tension is reduced, and the lattice constant of the crystallites, i.e. the side length of the unit cell, should be gradually increased to the maximum lattice constant of the film. However, the increase in the lattice constant of the crystallites is hindered by the binding effect of the backside of the photosensitive chip 110 to the thin film. The lattice constant of the crystallites is smaller than the largest lattice constant of the film, even as the thickness of the film increases. This results in the stress of the stress film 130 on the photo chip 110, which causes the photo chip to bulge toward one side of the film. The protruding distance of the portion of the photosensitive chip 110 corresponding to the photosensitive area (i.e. the portion of the photosensitive area in the vertical projection of the photosensitive chip 110) facing the side of the stress film 130 can be achieved by controlling the temperature and pressure during the film plating process.
The distance h of the corresponding part of the photosensitive area of the photosensitive chip protruding towards the stress film direction is defined as: the height of the periphery of the photosensitive area minus the height of the center of the photosensitive area is shown in fig. 9. (microlens array is omitted in fig. 9) in the present exemplary embodiment, the distance h by which the specific portion of the photosensitive chip protrudes toward the stress film is controlled to be in the range of 2 μm to 10 μm by controlling the temperature and pressure during the plating process. In this embodiment, the stress film 130 is attached to the entire back surface of the photo chip 110, so as to generate as much stress as possible to the photo chip 110. The specific size of the photosensitive chip, the thickness of the coating film and the thickness of the protrusion of the corresponding part of the photosensitive area in the photosensitive chip can be set according to actual conditions, and the specific size, the thickness of the coating film and the thickness of the protrusion of the corresponding part of the photosensitive area in the photosensitive chip are not taken as limitations of the embodiment.
The coating method includes, but is not limited to, physical vapor deposition methods such as vacuum evaporation, magnetron sputtering, and the like, or other chemical vapor deposition methods. The preferable method is vacuum evaporation and magnetron sputtering. The material of the coating film needs to be selected to have good adhesion and large surface energy (i.e. the excess energy on the surface of the material relative to the inside) so that the film can be firmly attached to the photosensitive chip 110 and can generate large stress. The material of the stress film 130 may include at least one of silicon dioxide, magnesium fluoride, silicon nitride, and aluminum nitride. The specific method and material of the coating are not intended to limit the present embodiment.
Before plating the stress film 130, the back surface, i.e., the substrate, of the photo sensor chip 110 needs to be polished. In this embodiment, the thickness of the photo chip can be polished to a range of 100 μm to 200 μm. Correspondingly, the thickness of the stress film 130 is 0.1 μm-10 μm, and the area of the photosensitive chip 110 is 5mm 2 -40mm 2 。
Set up the stress layer through the dorsal part at sensitization chip, sensitization chip can have two kinds of circumstances after final deformation: first, the portion of the photosensitive chip corresponding to the photosensitive area is substantially flush with the portion corresponding to the non-photosensitive area, i.e., the back surface of the entire photosensitive chip assembly forms a plane (as shown on the left side of fig. 8). Secondly, the part corresponding to the photosensitive region in the photosensitive chip protrudes towards the stress layer, and the protruding direction is the same as the direction of the curvature of image plane of the lens (as shown on the right side of fig. 8).
Fig. 10 shows a schematic diagram in which the curvature direction of the photosensitive chip is the same as the curvature direction of the lens field.
As shown in fig. 10, for example, the image plane J image of the lens is a smile face shape with the mouth upward. The image plane of the lens is a smiling face, so the shape of the chip is also made into a smiling face, namely the photosensitive chip or the photosensitive area of the photosensitive chip is protruded downwards, so that the shape of the photosensitive chip corresponds to the shape of the image plane of the lens, more optical information is received, and the shooting conditions of clear middle and fuzzy two sides are avoided.
Assuming that the actual curvature of field of the lens assembly is a, when the stress layer employs the compensation film, the curvature of field of the photo-sensing chip 1100 can be controlled to be B by adjusting parameters such as the thermal expansion coefficient, the heating temperature, the heating time, etc. of the compensation film, so that B is close to a and in the same direction. When the stress layer adopts the stress film, the field curvature of the photosensitive chip can be controlled to be B by adjusting parameters such as heating temperature, heating time, heating pressure and the like of the stress film in the film coating process, so that the B is close to the A and is in the same direction. According to some embodiments of the present application, the difference between B and a can be controlled within ± 10um. According to other embodiments of the present application, the difference between B and a can be controlled to be ± 5um. Therefore, the curvature of field of the photosensitive chip 1100 can be matched with the curvature of field of the lens, so that the whole curvature of field of the camera module is reduced, and the photographing quality of the camera module is improved.
Further, according to some embodiments of the present application, the thickness of the stress layer is 0.1 μm to 10 μm, and the stress layer may be formed by using a plating process such as physical vapor deposition, chemical vapor deposition, or the like. The traditional photosensitive chip needs to be adhered with the compensation layer and then attached to the circuit board. Compared with the prior art, the stress layer is arranged, so that a gluing process can be omitted, field curvature caused by difference of thermal expansion coefficients of a plurality of layers of different media is reduced, the risk of chip protrusion caused by uneven coating of the adhesive is reduced, and the thickness of the chip is not increased obviously.
In addition, the conventional compensation layer is generally made of a metal material. The thermal expansion coefficient of the metal material is generally 10-20 ppm/DEG C, and thermal mismatch is easily caused with materials such as a photosensitive chip, a circuit board and the like, so that the problems of mechanical fracture and the like between the compensation layer and the chip and the circuit board are caused. In the embodiment of the application, the thermal expansion coefficient of the compensation film is larger than or equal to that of the micro-lens array, and the thermal expansion coefficient of the stress film is close to that of the micro-lens array, so that the field curvature caused by the difference of the internal thermal expansion coefficients of the photosensitive chip can be compensated. Meanwhile, the problems of warping and field curvature of the photosensitive chip can be effectively relieved in the subsequent process of attaching the photosensitive chip to the circuit board.
According to some embodiments of the application, in the using process, the situation that the stress layer and the photosensitive chip have large performance difference and poor affinity, namely the adhesion force between the stress layer and the photosensitive chip is poor, so that the stress layer falls off from the photosensitive chip and is not beneficial to keeping in the bending direction. Therefore, the present inventors have proposed a second photosensitive chip assembly structure on the basis of the photosensitive chip assembly of the first exemplary embodiment described above.
FIG. 11 shows a schematic view of a photosensitive chip assembly according to a second exemplary embodiment of the present application.
As shown in fig. 11, the photosensitive chip assembly 1100 includes a photosensitive chip 110, a stress layer 130, and a first intermediate layer 120. The stress layer 130 is disposed on the backside of the photo sensor chip 110. The first intermediate layer 120 is disposed between the photosensitive chip 110 and the stress layer 130. The material property of the first intermediate layer 120 is between the material of the bottom layer of the photosensitive chip 110 and the material of the stress layer 130, so that the non-affinity property of the two can be neutralized, the function similar to a bridge can be realized, and the bonding force between the two can be increased.
The material of the first intermediate layer 120 has little or no effect on the bending of the photosensitive chip assembly 1100, or is consistent with the effect of the stress layer 130 on the bending of the chip. Specifically, the material of the first interlayer 120 may be one or more of silicon and silicon dioxide, but the application is not limited thereto.
According to some embodiments, the thickness of the first intermediate layer 120 is 10-20nm, and the first intermediate layer may be formed by a coating process such as physical vapor deposition, chemical vapor deposition, and the like, such as vacuum evaporation, magnetron sputtering, and the like, or by an atomic layer deposition, and the like.
Similarly, when the photosensitive chip assembly is attached to the circuit board by the adhesive, the stress layer and the adhesive may not have proper properties and may not be easily adhered. For this reason, the present inventors proposed third and fourth photosensitive chip assembly structures in the photosensitive chip assemblies implemented in the first and second exemplary embodiments described above.
FIG. 12 is a second schematic view of a photosensitive chip assembly according to a third exemplary embodiment of the present application; fig. 13 is a schematic diagram showing a third exemplary embodiment of a photosensitive chip assembly according to the present application.
The photosensitive chip assembly structure shown in fig. 12 does not include the first intermediate layer 120; the photosensitive chip assembly structure shown in fig. 13 includes a first interlayer 120. The following description will be made by combining fig. 120 and 13 together.
As shown in fig. 12, the photosensitive chip assembly 1100 includes a photosensitive chip 110, a stress layer 130, and a second intermediate layer 140. The stress layer 130 is disposed on the backside of the photo sensor chip 110. The second interlayer 140 is disposed on the opposite side of the stress layer 130 from the photo chip 110. As shown in fig. 13, the photosensitive chip assembly 1100 includes a photosensitive chip 110, a stress layer 130, a first interlayer 120, and a second interlayer 140. The stress layer 130 is disposed on the backside of the photo sensor chip 110. The first intermediate layer 120 is disposed between the photosensitive chip 110 and the stress layer 130. The second intermediate layer 140 is disposed on the opposite side of the stress layer 130 from the photosensitive chip 110.
The material of the second interlayer 140 is suitable for stable bonding between the stress layer 130 and an adhesive, wherein the adhesive is used for bonding the photosensitive chip 110 to a circuit board. Meanwhile, the bending conditions of the photosensitive chip 110 and the stress layer 130 are not influenced, or the influence is consistent with the bending influence of the stress layer 130 on the photosensitive chip 110. At this time, the bending of the chip assembly 1100 is a result of the combined effect of the stress layer 130 and the second intermediate layer 140.
Specifically, the bonding performance between the second interlayer 140 and the stress layer 130 and the adhesive is better than that between the stress layer 130 and the adhesive. The material of the second interlayer 140 may be a nano-coating layer for increasing the adhesion between the stress layer 130 and the binder, and is generally a hydrophilic material, such as porous silica, titania, hydrophilic silicon coating solution, etc., but the application is not limited thereto.
According to some embodiments, the second intermediate layer has a thickness of 10 to 20nm, and may be formed by a coating process such as physical vapor deposition, chemical vapor deposition, and the like, such as vacuum evaporation, magnetron sputtering, and the like, or may be formed by an atomic layer deposition, and the like, to form the second intermediate layer 140.
As shown in fig. 10-13, the thickness of the photosensitive chip assembly 1100 increases due to the addition of the stress layer 130, the first interlayer 120, and the second interlayer 140. Therefore, before forming the stress layer 130, the first intermediate layer 120, and the second intermediate layer 140, the thickness of the silicon substrate on the bottom side of the photosensitive chip 110 may be ground to reduce the thickness of the formed chip, so as to meet the general chip requirements.
When the photosensitive chip assembly is used in a camera module, the photosensitive chip assembly is usually fixed on the bearing plate together with the electronic element. According to some embodiments of the present application, the carrier plate may be a separate circuit board, and the electronic component and the photosensitive chip assembly are electrically connected to the carrier plate. According to other embodiments of the present application, as shown in fig. 14, the carrier plate 1200 may further include a flexible circuit board 1210 and a reinforcing plate 1220. The electronic component 1300 and the photosensitive chip assembly 1100 are disposed on the flexible circuit board 1210 and electrically connected to the flexible circuit board 1210, and the stress layer 130 is located between the sensing chip 110 and the flexible circuit board 1210. The reinforcing plate 1220 is disposed under the flexible circuit board 1210 to support the flexible circuit board 1210.
Optionally, as shown in fig. 15, the carrier plate 1200 further includes a circuit board 1210 and a reinforcing plate 1220, the circuit board 1210 has an opening 1211, and the electronic component 1300 is disposed on the circuit board 1210. The stiffener 1220 is disposed under the circuit board 1210, and the photo sensor chip assembly 1100 is disposed on the stiffener 1220 and in the opening 1211. The electronic component 1300 and the photo sensor chip assembly 1100 are electrically connected to the circuit board 1220, and the stress layer 1300 is located between the sensor chip 110 and the circuit board 1210. In the present embodiment, the photosensitive chip assembly 1100 is disposed on the reinforcing plate 1220 and in the opening 1211, and the thickness of the entire camera module can be reduced.
The above fixing scheme is described by taking the photosensitive chip assembly of the first exemplary embodiment of the present application as an example, and is also applicable to photosensitive chip assemblies in other exemplary embodiments.
Fig. 16 is a schematic view illustrating a structure of a package of a photosensitive element of a camera module according to an exemplary embodiment of the present application.
As shown in fig. 16, the camera module photosensitive device package 1000 includes a photosensitive chip assembly 1100, a carrier plate 1200, an electronic element 1300, a package member 1400, and a filter element 1500.
The photo chip assembly 1100 is adhered to the carrier plate 1200 by an adhesive 900. The carrier plate 1200 is electrically connected to the sensor chip assembly 1100 for transmitting digital signals. The electronic component 1300 is disposed on the carrier 1200 and electrically connected to the carrier 1200, so as to provide an auxiliary circuit for transmitting and processing the digital signal.
The package component 1400 is disposed on the carrier plate 1200, the package component 1400 and the carrier plate 1200 enclose a cavity 1441 for accommodating the microchip assembly 1100 and the electronic component 1300, and the package component 1400 has a light-transmitting window 1442 exposing the microlens array 111 of the microchip assembly 1100. The filter element 1500 is disposed on the package member 1400 and covers the transparent window 1442 for filtering out infrared light to improve the image capturing effect.
When the photo chip assembly 1100 is attached to the carrier plate 1200 by the adhesive 900 and heat is required to cure the adhesive 900, the central region of the photo chip 110 remains flat or is recessed downward, which can improve curvature of field compared to the prior art in which the central region of the photo chip 110 protrudes upward. From this, the module of making a video recording just can also be more clear around shooing under the clear condition in center of shooing. The packaging body has simple structure and simple packaging process.
The packaging body structure provided by the embodiment can prevent the photosensitive chip, the electronic element, the circuit board and the like from being polluted.
Fig. 17 is a schematic diagram illustrating a structure of a package of a photosensitive assembly of a camera module according to another exemplary embodiment of the present application.
Alternatively, the package member 1400 is integrally formed on the carrier plate 1200 by transfer molding, injection molding, or die pressing. The package component 1400 encapsulates the die assembly 1100 and the electronic component 1300, and the package component 1400 has a light-transmissive window 1442 exposing the microlens array 111 of the die assembly 1100.
The package structure is reduced in size in all directions of length, width and height, so that the adhesive is prevented from being separated out, and the electronic element and the connecting line are further protected by the package member 1400.
Fig. 18 shows a second schematic view of a package of a photosensitive element of a camera module according to another exemplary embodiment of the present application.
Optionally, the package member 1400 includes a molding portion 1443, a support portion 1444. The molding portion 1443 is disposed on the carrier 1200 and covers the electronic component 1300. The supporting portion 1444 is disposed on the molding portion 1443, the molding portion 1443 and the supporting portion 1444 surround a cavity for accommodating the microchip assembly 1100 and the electronic component 1300, and the supporting portion 1444 has a light-transmitting window 1442 for exposing the microlens array 111 of the microchip assembly 1100.
The packaging body structure has simple packaging process, small warpage and less dirt generated in the packaging process, and the sizes in the length direction and the width direction are reduced.
It should be noted that the structural schematic diagrams of the package of the photosensitive assembly shown in fig. 16 to 18 are illustrated by taking the photosensitive chip assembly of the first exemplary embodiment of the present application as an example, and are also applicable to the photosensitive chip assemblies of other exemplary embodiments of the present application.
In addition, this application still provides a module of making a video recording, including above-mentioned sensitization chip subassembly packaging body.
FIG. 19 is a schematic diagram of a camera module structure according to an exemplary embodiment of the present application
As shown in fig. 19, the camera module 2000 further includes a lens assembly 1600 configured to be mounted on the package member 1400 for capturing and focusing a subject to be photographed for transfer to the photo chip assembly 1100. Lens assembly 1600 includes a lens 1610, a lens carrier or motor 1620. The curvature of field of the photo-sensing chip assembly 1100 is in the same direction as the curvature of field of the lens 1610 and the difference is controlled within ± 10um.
It should be noted that the structural schematic diagram of the camera module shown in fig. 19 is described by taking the photosensitive chip assembly according to the first exemplary embodiment of the present application as an example, and is also applicable to photosensitive chip assemblies according to other exemplary embodiments of the present application.
The utility model provides a sensitization chip subassembly is through the mode that sets up the stress layer at the traditional sensitization chip back, the crooked direction and the degree of control sensitization chip to the field curvature of control sensitization chip makes the crooked direction of sensitization chip unanimous with the field curvature direction of camera lens, thereby improves the definition of formation of image. In addition, in order to ensure good combination between the stress layer and the photosensitive chip or between the circuit boards, the first intermediate layer and/or the second intermediate layer are/is arranged in the photosensitive chip assembly, so that the bending of the photosensitive chip can be kept for a long time.
The foregoing detailed description of the embodiments of the present application has been presented to illustrate the principles and implementations of the present application, and the description of the embodiments is only intended to facilitate the understanding of the methods and their core concepts of the present application. Meanwhile, a person skilled in the art should, according to the idea of the present application, change or modify the embodiments and applications of the present application based on the application scope of the present application. In view of the above, the description should not be taken as limiting the application.
Claims (29)
- A photosensitive chip assembly comprising:the photosensitive chip comprises a substrate, an active area and a micro-lens array, wherein the active area is positioned on the substrate, and the micro-lens array is positioned on the active area;and the stress layer is arranged on the back side of the photosensitive chip, so that the photosensitive chip deforms towards the substrate of the photosensitive chip.
- The photosensitive chip assembly of claim 1, wherein the stress layer has a thickness of 0.1 to 10um.
- The photosensitive chip assembly according to claim 2, wherein the thickness of the photosensitive chip is 100um to 200um.
- The photosensitive chip assembly of claim 3, wherein the stress layer comprises:a compensation film having a coefficient of thermal expansion greater than or equal to a coefficient of thermal expansion of the microlens array.
- The photosensitive chip assembly of claim 3, wherein a thickness of the compensation film is greater than or equal to a thickness of the microlens array.
- The photosensitive chip assembly according to claim 3, wherein the material of the compensation film comprises at least one of silicon oxide, magnesium fluoride, aluminum oxide, titanium oxide.
- The photosensitive chip assembly of claim 3, wherein the compensation film comprises a PVD film and/or a CVD film.
- The photosensitive chip assembly of claim 7, wherein said PVD film comprises at least one of a vacuum evaporation film, a magnetron sputtering film, an atomic layer deposition film.
- The photosensitive chip assembly of claim 3,the active region also comprises a photosensitive region which is arranged below the micro lens array and used for receiving light rays reaching the front side of the photosensitive chip from the outside;the stress layer comprises a stress film with a preset thickness, and the stress generated in the film coating process enables the photosensitive area of the photosensitive chip to deform towards the substrate of the photosensitive chip.
- The photosensitive chip assembly of claim 9, wherein said stress film comprises at least one of a silicon dioxide film, a magnesium fluoride film, a silicon nitride film, an aluminum nitride film.
- The photo chip assembly of claim 9, wherein the backside of the photo chip is a flat surface before the stress film is coated.
- The photosensitive chip assembly of claim 9, wherein a portion of said photosensitive chip corresponding to a photosensitive area is substantially flush with a back surface of said photosensitive chip.
- The photosensitive chip assembly according to claim 9, wherein a portion of the photosensitive chip corresponding to the photosensitive region protrudes toward the stress film, and a distance of the protrusion is in a range of 2 μm to 10 μm.
- The photosensitive chip assembly of claim 9, wherein said stress film is attached to the entire back surface of said photosensitive chip.
- The photosensitive chip assembly of claim 9, wherein said photosensitive chip has an area of 5mm 2 -40mm 2 。
- The photosensitive chip assembly of any one of claims 1-15, wherein said photosensitive chip assembly further comprises:the first intermediate layer is arranged between the photosensitive chip and the stress layer, and the bonding performance between the first intermediate layer and the substrate as well as between the first intermediate layer and the stress layer is superior to that between the substrate and the stress layer.
- The photosensitive chip assembly of claim 16, wherein said photosensitive chip assembly further comprises:the second intermediate layer is arranged on the side, opposite to the photosensitive chip, of the stress layer, and the photosensitive chip assembly is bonded with the bearing plate for mounting the photosensitive chip assembly through the adhesive.
- The photosensitive chip assembly of any one of claims 4-8, wherein said photosensitive chip assembly further comprises:the second intermediate layer is arranged on the side, opposite to the photosensitive chip, of the stress layer, and the photosensitive chip assembly is bonded with the bearing plate for mounting the photosensitive chip assembly through the adhesive.
- The photosensitive chip assembly of claim 17 or 18, wherein the bonding performance between the second interlayer and the stress layer and the adhesive is better than the bonding performance between the stress layer and the adhesive.
- The photosensitive chip assembly of claim 16, wherein the material of said first interlayer comprises one or more of silicon, silicon dioxide.
- The photosensitive chip assembly of claim 17 or 18, wherein the material of the second interlayer comprises one or more of porous silica, titania, and hydrophilic silicon coating.
- The photosensitive chip assembly according to claim 16 or 18, wherein said first or second intermediate layer has a thickness of 10-20nm.
- The photosensitive chip assembly of any one of claims 16-18, wherein said first or second intermediate layer comprises a physical vapor deposition layer and/or a chemical vapor deposition layer.
- A camera module, comprising:a lens assembly including a lens;the photosensitive chip assembly of any one of claims 1 to 23, connected to the lens assembly, wherein the curvature of field of the photosensitive chip assembly is in the same direction as the curvature of field of the lens and has a difference within ± 10um.
- The camera module of any of claims 24, wherein the camera module further comprises:the photosensitive chip assembly is arranged on the bearing plate;and the electronic element is arranged on the bearing plate.
- The camera module of claim 25, wherein the camera module further comprises:the packaging component is arranged on the bearing plate, the packaging component and the bearing plate surround a cavity for accommodating the photosensitive chip assembly and the electronic element, and the packaging component is provided with a window for exposing the micro-lens array of the photosensitive chip assembly;orThe packaging component coats the photosensitive chip component and the electronic element and is provided with a window for exposing the micro-lens array of the photosensitive chip component; and isThe packaging part is integrally formed on the bearing plate through transfer molding, injection molding or die pressing;orThe packaging component comprises a molding part, is arranged on the bearing plate and wraps the electronic element; andand the supporting part is arranged on the molding part, the molding part and the supporting part surround a cavity for accommodating the photosensitive chip assembly and the electronic element, and the supporting part is provided with a window for exposing the micro-lens array of the photosensitive chip assembly.
- The camera module of claim 26, wherein the camera module further comprises:a filter element disposed on the encapsulation part and covering the window;the lens assembly is mounted on the package component.
- The camera module of claim 25, wherein the carrier plate comprises:the electronic element and the photosensitive chip assembly are electrically connected with the bearing plate;orThe electronic element and the photosensitive chip assembly are arranged on the flexible circuit board and are electrically connected with the flexible circuit board; anda reinforcing plate disposed under the flexible circuit board to support the flexible circuit board;orA circuit board having an opening, the electronic component being disposed on the circuit board; andthe stiffening plate sets up circuit board below, the setting of sensitization chip subassembly is in on the stiffening plate and be located in the opening, electronic component with sensitization chip subassembly with circuit board electricity is connected.
- A terminal device comprising a camera module according to any one of claims 24-28.
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010028337.9A CN113132586B (en) | 2020-01-10 | 2020-01-10 | Photosensitive chip assembly, camera module and electronic equipment |
| CN202010027860.XA CN113132585B (en) | 2020-01-10 | 2020-01-10 | Photosensitive chip assembly, mobile terminal, camera module and preparation method thereof |
| CN202010027860X | 2020-01-10 | ||
| CN2020100278898 | 2020-01-10 | ||
| CN202010027889.8A CN113114874B (en) | 2020-01-10 | 2020-01-10 | Photosensitive chip assembly, camera module and terminal equipment |
| CN2020100283379 | 2020-01-10 | ||
| PCT/CN2020/137753 WO2021139510A1 (en) | 2020-01-10 | 2020-12-18 | Photosensitive chip assembly, camera module, and terminal device |
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| CN115336245A true CN115336245A (en) | 2022-11-11 |
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| CN202080093815.2A Pending CN115336245A (en) | 2020-01-10 | 2020-12-18 | Photosensitive chip assembly, camera module and terminal equipment |
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| WO (1) | WO2021139510A1 (en) |
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