CN115333380A - Silicon chip high-voltage adsorption circuit - Google Patents

Silicon chip high-voltage adsorption circuit Download PDF

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Publication number
CN115333380A
CN115333380A CN202211248168.5A CN202211248168A CN115333380A CN 115333380 A CN115333380 A CN 115333380A CN 202211248168 A CN202211248168 A CN 202211248168A CN 115333380 A CN115333380 A CN 115333380A
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air relay
circuit
voltage
secondary winding
flyback
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CN115333380B (en
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林伟群
唐亚海
姚志毅
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Shenzhen CSL Vacuum Science and Technology Co Ltd
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Shenzhen CSL Vacuum Science and Technology Co Ltd
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33507—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0083—Converters characterised by their input or output configuration
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/14—Arrangements for reducing ripples from dc input or output
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33561—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having more than one ouput with independent control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dc-Dc Converters (AREA)
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Abstract

The invention belongs to the technical field of silicon chip adsorption, and particularly relates to a silicon chip high-voltage adsorption circuit which comprises a flyback transformer circuit and an air relay circuit; the voltage stress of the diodes on the secondary winding is divided into a plurality of diodes which are connected in series by alternately connecting a plurality of groups of secondary windings and a plurality of diodes in series in each secondary winding sub-module, so that the voltage stress on a single diode is greatly reduced, the service life of the diode is prolonged, the safety of a circuit is improved, and the output of positive and negative charges at two ends is realized by connecting two groups of secondary winding modules; meanwhile, the boosting multiple of the flyback transformer can be flexibly adjusted by changing the serial number of the secondary winding and the diodes, and the voltage boosting multiple is not limited by the voltage stress of the diodes; and the output of high-voltage direct current is realized through the air relay with high voltage resistance, so that the reliability of the circuit is improved.

Description

Silicon chip high-voltage adsorption circuit
Technical Field
The invention belongs to the technical field of silicon wafer adsorption, and particularly relates to a silicon wafer high-voltage adsorption circuit.
Background
In the process of manufacturing a chip, when a silicon wafer is etched and photoetched, a high-voltage direct current is needed to adsorb the silicon wafer in a set working area, so that a refined process is realized. In the prior art, high-voltage direct current is realized through a traditional flyback circuit, the voltage of a secondary winding of the flyback converter is very high, so that the voltage stress of a diode is very high, the problem of high stress of a device of the flyback circuit exists in the mode, the service life of the device is seriously influenced, the safety of the circuit is reduced, meanwhile, the boost multiple of the traditional flyback circuit is fixed, the limitation of the stress of the device cannot be flexibly adjusted, and the safety and the flexibility of the circuit are low.
Disclosure of Invention
The invention aims to overcome the defects that a traditional flyback circuit is adopted in a silicon wafer high-voltage adsorption circuit to realize high-voltage direct current, the stress of a device is high, and the boosting multiple cannot be flexibly adjusted in the prior art, so that the silicon wafer high-voltage adsorption circuit is provided.
A silicon chip high-voltage adsorption circuit comprises a flyback transformer circuit and an air relay circuit;
the flyback transformer circuit comprises a primary winding module and a secondary winding module;
the secondary winding module comprises two secondary winding sub-modules, each secondary winding sub-module comprises a plurality of groups of secondary windings and a plurality of diodes which are alternately connected in series and then connected with a capacitor in parallel;
one end of the secondary winding of one secondary winding submodule and the cathode of the diode of the other secondary winding submodule form the output end of the flyback transformer circuit and are connected to the air relay circuit.
Furthermore, the turns of a plurality of groups of secondary windings in the secondary winding submodule are the same, so that the diodes connected in series bear the same voltage stress when the flyback transformer circuit works.
Furthermore, the primary winding is connected in series with a switching tube, and two ends of the primary winding are connected with a power supply input.
Furthermore, the primary winding and the switching tube are connected in parallel with a first filter capacitor.
Further, the switching tube is an MOS tube.
Further, the air relay circuit comprises a first air relay, a second air relay, a third air relay and a fourth air relay; the contact end of the first air relay is connected with the first flyback output end and the first load access end; the contact end of the second air relay is connected with the first flyback output end and the second load access end; the contact end of the third air relay is connected with the second flyback output end and the second load access end; and the contact end of the fourth air relay is connected with the second flyback output end and the first load access end.
Further, a first triode is connected with a coil end of the first air relay, a second triode is connected with a coil end of the second air relay, a third triode is connected with a coil end of the third air relay, and a fourth triode is connected with a coil end of the fourth air relay; a control signal is connected with the base electrodes of the first triode and the third triode so as to simultaneously control the contact terminals of the first air relay and the third air relay to be closed and opened; and the other control signal is simultaneously connected with the base electrodes of the second triode and the fourth triode so as to simultaneously control the contact terminals of the second air relay and the fourth air relay to be closed and opened.
Further, the first air relay and the third air relay are closed, when the second air relay and the fourth air relay are disconnected, the first flyback output end is connected with the first load access end, and the second flyback output end is connected with the second load access end; when the second air relay and the fourth air relay are closed, the first flyback output end is connected with the second load access end, and the second flyback output end is connected with the first load access end.
Furthermore, the first load access end and the second load access end are also connected with a second filter capacitor, and the other end of the second filter capacitor is grounded.
Further, an LC filter circuit is connected between the output end of the flyback transformer circuit and the air relay.
Has the beneficial effects that:
1. according to the silicon wafer high-voltage adsorption circuit, the multiple groups of secondary windings and the multiple diodes are alternately connected in series in each secondary winding submodule, the voltage stress of the diodes on the secondary windings is divided into the multiple diodes which are connected in series, the voltage stress on a single diode is greatly reduced, the service life of the diode is prolonged, the safety of the circuit is improved, and the output of positive and negative charges at two ends is realized through the connection of the two groups of secondary winding submodules; meanwhile, the boosting multiple of the flyback transformer can be flexibly adjusted by changing the serial number of the secondary winding and the diodes, and the voltage boosting multiple is not limited by the voltage stress of the diodes; and the output of high-voltage direct current is realized through the air relay with high voltage resistance, so that the reliability of the circuit is improved.
2. According to the invention, through the arrangement of multiple groups of secondary windings with the same number of turns in the secondary winding submodule, the voltage stress on each diode connected in series is ensured to be equal, and the reliability of the circuit is further improved; the arrangement that the power input end of the primary winding is connected with the switching tube in series can effectively control the power input of the flyback transformer so as to control the output.
3. According to the invention, the first air relay, the second air relay, the third air relay and the fourth air relay in the air relay circuit are matched and connected, so that flexible polarity conversion at two ends of load pressurization can be realized.
4. According to the invention, the first filter capacitor is connected in parallel to the switching tube and the primary winding, the LC filter circuit is arranged between the flyback transformer circuit and the air relay, and the second filter capacitor is arranged at the first load access end and the second load access end, so that the current transmission among the power input end, the flyback transformer and the air relay and the clutter interference of the load pressurization end can be effectively filtered, and the control signal and the power transmission reliability of the high-voltage silicon chip circuit are ensured.
Drawings
FIG. 1 is a schematic diagram of the overall circuit structure of the present invention;
fig. 2 is a schematic circuit structure diagram in embodiment 1 of the present invention.
Reference numerals: 1. a flyback transformer circuit; 11. a primary winding; 12. a secondary winding; 13. a diode; 14. a switching tube; 15. a first filter capacitor; 2. an air relay circuit; 21. a first air relay; 22. a second air relay; 23. a third air relay; 24. a fourth air relay; 25. a second filter capacitor; 26. a first triode; 27. a second triode; 28. a third triode; 29. a fourth triode; 31. a first flyback output terminal; 32. a second flyback output terminal; 41. a first load access end; 42. a second load access end; 51. a first control point; 52. a second control point; 53. a third control point; 54. and a fourth control point.
Detailed Description
In order to make those skilled in the art better understand the technical solutions in the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The embodiment provides a silicon chip high-voltage adsorption circuit, which is shown in fig. 1 and comprises a flyback transformer circuit 1 and an air relay circuit 2;
the flyback transformer circuit 1 comprises a primary winding module and a secondary winding module;
the secondary winding module comprises two secondary winding sub-modules, each secondary winding sub-module comprises a plurality of groups of secondary windings 12 and a plurality of diodes 13 which are alternately connected in series and then connected with a capacitor in parallel;
one end of the secondary winding 12 of one secondary winding submodule and the cathode of the diode 13 of the other secondary winding submodule form the output end of the flyback transformer circuit 1 and are connected to the air relay circuit 2.
By alternately connecting a plurality of groups of secondary windings 12 and a plurality of diodes 13 in series in each secondary winding submodule, the voltage stress of the diodes 13 on the secondary windings 12 is distributed to the diodes 13 connected in series, the voltage stress on a single diode 13 is greatly reduced, the service life of the diode 13 is prolonged, the safety of a circuit is improved, and the output of positive and negative charges at two ends is realized through the connection of two groups of secondary winding submodules; meanwhile, the boosting multiple of the flyback transformer can be flexibly adjusted by changing the serial number of the secondary winding 12 and the diode 13, and the voltage boosting multiple is not limited by the voltage stress of the diode 13; and the output of high-voltage direct current is realized through the air relay with high voltage resistance, so that the reliability of the circuit is improved.
Specifically, the number of turns of the secondary windings 12 in the secondary winding submodule is the same, so that the diodes 13 connected in series share the same voltage stress when the flyback transformer circuit 1 operates. The number of the serial structures of the secondary windings 12 and the diodes 13 is N, N is more than or equal to 2 in the invention, the total turn ratio of the primary winding 11 of the flyback converter circuit and the secondary winding 12 in a secondary winding submodule is N, and when the voltage on the primary winding 11 is V L The total voltage stress V of all diodes 13 on the secondary winding D Comprises the following steps:
Figure 138516DEST_PATH_IMAGE001
the voltage stress V on each diode 13 at this time d Comprises the following steps:
Figure 491874DEST_PATH_IMAGE002
thereby effectively reducing the voltage stress on the diode 13; meanwhile, the number of the series structures of the secondary windings 12 and the diodes 13 is changed, the boosting multiple of the flyback transformer circuit 1 can be flexibly adjusted, and the voltage stress of the diodes 13 is not limited.
Referring to fig. 2, in an embodiment of the present invention, the turn ratio of the primary winding 11 and the secondary winding 12 in the two secondary winding submodules and the voltage on the primary winding 11 are preset according to design requirements, so that the output voltage of the flyback transformer circuit 1 is ± 2000V; and setting the number n =3 of the series structure of the secondary winding 12 and the diodes 13 in one secondary winding submodule, wherein the voltage stress on each diode 13 is as follows:
Figure 474874DEST_PATH_IMAGE003
the primary winding 11 is connected in series with a switching tube 14, and both ends of the primary winding are connected with a power input, and the switching tube 14 is an MOS tube.
Specifically, the air relay circuit 2 includes a first air relay 21, a second air relay 22, a third air relay 23, a fourth air relay 24, and K1, K2, K3, and K4, respectively; the contact end of the first air relay 21 is connected with a first flyback output end 31 and a first load access end 41; the contact end of the second air relay 22 is connected with the first flyback output end 31 and the second load access end 42; the contact end of the third air relay 23 is connected with the second flyback output end 32 and the second load access end 42; the contact end of the fourth air relay 24 is connected with the second flyback output end 32 and the first load access end 41.
A first triode 26 is connected with the coil end of the first air relay 21, a second triode 27 is connected with the coil end of the second air relay 22, a third triode 28 is connected with the coil end of the third air relay 23, and a fourth triode 29 is connected with the coil end of the fourth air relay 24; a control signal is connected to the bases of first transistor 26 and third transistor 28 to simultaneously control the closing and opening of the contact terminals of first air relay 21 and third air relay 23; another control signal simultaneously connects the bases of the second transistor 27 and the fourth transistor 29 to simultaneously control the closing and opening of the contact terminals of the second air relay 22 and the fourth air relay 24.
When the first air relay 21 and the third air relay 23 are closed and the second air relay 22 and the fourth air relay 24 are opened, the first flyback output terminal 31 is connected to the first load connection terminal 41, and the second flyback output terminal 32 is connected to the second load connection terminal 42; when the first air relay 21 and the third air relay 23 are turned off, and the second air relay 22 and the fourth air relay 24 are turned on, the first flyback output terminal 31 is connected to the second load input terminal 42, and the second flyback output terminal 32 is connected to the first load input terminal 41.
By setting the turn ratio of the primary winding 11 and the secondary windings 12 in the two secondary winding submodules and setting the voltage on the primary winding 11, the voltage range output by the secondary windings 12 can be set in a specific range according to requirements; as in one embodiment of the present invention, the turn ratio of the primary winding 11 and the secondary winding 12 in the two secondary winding submodules and the voltage on the primary winding 11 are preset according to design requirements so that: when the air relays K1 and K3 are switched on and the air relays K2 and K4 are switched off, the voltage on the K1 and K4 sides is +2000V, and the voltage on the K2 and K3 sides is-2000V; when the air relays K2 and K4 are switched on and the air relays K1 and K3 are switched off, the voltage of the K1 and K4 sides is-2000V, and the voltage of the K2 and K3 sides is +2000V; thus, the polarity of + -2000V on the load side can be exchanged by the diagonal conduction of the air relay.
As a further improvement of this embodiment, a control device is further included for controlling the polarity switching of the first load access terminal 41 and the second load access terminal 42, the control device output including a first control signal and a second control signal.
The base of the first transistor 26 is connected via a current limiting resistor to a first control point 51, the base of the second transistor 27 is connected via a current limiting resistor to a second control point 52, the base of the third transistor 28 is connected via a current limiting resistor to a third control point 53, and the base of the fourth transistor 29 is connected via a current limiting resistor to a fourth control point 54.
The first control signal connects the first control point 51 and the third control point 53, and the second control signal connects the second control point 52 and the fourth control point 54. When the first control signal is valid and the second control signal is invalid, the first triode 26 and the third triode 28 are turned on, the second triode 27 and the fourth triode 29 are turned off, so that the coils of the first air relay 21 and the third air relay 23 are powered on, the contact ends are closed, the first flyback output end 31 is connected with the first load access end 41, and the second flyback output end 32 is connected with the second load access end 42; when the first control signal is invalid and the second control signal is valid, the first transistor 26 and the third transistor 28 are turned off, the second transistor 27 and the fourth transistor 29 are turned on, so that the coil ends of the second air relay 22 and the fourth air relay 24 are powered on, the contact ends are closed, the first flyback output end 31 is connected to the second load input end 42, and the second flyback output end 32 is connected to the first load input end 41. Therefore, the polarity conversion of the two ends of the load pressurization is realized by controlling the first control signal and the second control signal.
In this embodiment, the control device may be a Central Processing Unit (CPU), and may also be a Microprocessor (MPU), a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), an off-the-shelf programmable gate array (FPGA) or other programmable logic device, a discrete gate or transistor logic device, a discrete hardware component, and the like.
In this embodiment, the control program of the control device is set by a person skilled in the art according to the prior art.
In this embodiment, the air relay may be an on-delay relay or an off-delay relay.
As a further improvement of this embodiment, by connecting a first filter capacitor 15 in parallel to the switching tube 14 and the primary winding 11, disposing an LC filter circuit between the flyback transformer circuit 1 and the air relay, and disposing a second filter capacitor 25 at the first load incoming end 41 and the second load incoming end 42, noise interference at the power input end, current transmission between the flyback transformer and the air relay, and the load applying end can be effectively filtered, and reliability of control signals and power transmission of the high voltage silicon chip circuit of the present invention is ensured.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several equivalent substitutions or obvious modifications can be made without departing from the spirit of the invention, and all the properties or uses are considered to be within the scope of the invention.

Claims (10)

1. A silicon chip high-voltage adsorption circuit is characterized by comprising a flyback transformer circuit (1) and an air relay circuit (2);
the flyback transformer circuit (1) comprises a primary winding module and a secondary winding module;
the secondary winding module comprises two secondary winding sub-modules, each secondary winding sub-module comprises a plurality of groups of secondary windings (12) and a plurality of diodes (13) which are alternately connected in series and then connected in parallel with a capacitor;
one end of a secondary winding (12) of one secondary winding submodule and the cathode of a diode (13) of the other secondary winding submodule form the output end of a flyback transformer circuit (1) and are connected to the air relay circuit (2).
2. The silicon chip high voltage adsorption circuit according to claim 1, wherein the number of turns of the secondary windings (12) in the secondary winding submodule is the same, so that the diodes (13) connected in series can bear the same voltage stress when the flyback transformer circuit (1) operates.
3. The silicon chip high-voltage absorption circuit according to claim 1, wherein the primary winding module comprises a switching tube (14) connected in series with the primary winding (11), and a power input is connected at two ends.
4. The silicon chip high-voltage absorption circuit according to claim 3, wherein the primary winding (11) and the switching tube (14) are further connected in parallel with a first filter capacitor (15).
5. The silicon wafer high-voltage adsorption circuit as claimed in claim 4, wherein the switch tube (14) is a MOS tube.
6. The silicon chip high voltage adsorption circuit according to claim 1, wherein the air relay circuit (2) comprises a first air relay (21), a second air relay (22), a third air relay (23) and a fourth air relay (24); the contact end of the first air relay (21) is connected with a first flyback output end (31) and a first load access end (41); the contact end of the second air relay (22) is connected with a first flyback output end (31) and a second load access end (42); the contact end of the third air relay (23) is connected with a second flyback output end (32) and a second load access end (42); and the contact end of the fourth air relay (24) is connected with a second flyback output end (32) and a first load access end (41).
7. The silicon chip high-voltage adsorption circuit according to claim 6, wherein a first triode (26) is connected with a coil terminal of the first air relay (21), a second triode (27) is connected with a coil terminal of the second air relay (22), a third triode (28) is connected with a coil terminal of the third air relay (23), and a fourth triode (29) is connected with a coil terminal of the fourth air relay (24); a control signal is connected with the bases of the first triode (26) and the third triode (28) so as to simultaneously control the contact terminals of the first air relay (21) and the third air relay (23) to be closed and opened; the other control signal is connected with the bases of the second triode (27) and the fourth triode (29) simultaneously, thereby controlling the contact terminals of the second air relay (22) and the fourth air relay (24) to be closed and opened simultaneously.
8. The silicon chip high-voltage adsorption circuit according to claim 6, wherein the first air relay (21) and the third air relay (23) are closed, and when the second air relay (22) and the fourth air relay (24) are opened, the first flyback output terminal (31) is connected to the first load connection terminal (41), and the second flyback output terminal (32) is connected to the second load connection terminal (42); the first air relay (21) and the third air relay (23) are disconnected, when the second air relay (22) and the fourth air relay (24) are closed, the first flyback output end (31) is connected with the second load access end (42), and the second flyback output end (32) is connected with the first load access end (41).
9. The silicon chip high voltage adsorption circuit according to claim 6, wherein a second filter capacitor (25) is further connected to the first load access terminal (41) and the second load access terminal (42), and the other end of the second filter capacitor (25) is grounded.
10. The silicon chip high-voltage adsorption circuit according to claim 1, wherein an LC filter circuit is connected between the output end of the flyback transformer circuit (1) and the air relay.
CN202211248168.5A 2022-10-12 2022-10-12 Silicon chip high-voltage adsorption circuit Active CN115333380B (en)

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Publication number Priority date Publication date Assignee Title
US5394067A (en) * 1992-03-27 1995-02-28 Discom Inc. Regulated high DC voltage supply
JP2002034244A (en) * 2000-07-11 2002-01-31 Sony Corp Switching power supply circuit
US20040141340A1 (en) * 2001-03-09 2004-07-22 Masayuki Yasumura Switching power supply circuit
CN102739101A (en) * 2012-06-20 2012-10-17 东南大学 Forward-flyback inverter
CN104483632A (en) * 2014-12-22 2015-04-01 东风汽车公司 Simulator for vehicle-mounted Li-BMS monomers
CN204441270U (en) * 2015-02-12 2015-07-01 北京北方微电子基地设备工艺研究中心有限责任公司 A kind of electrostatic chuck systems

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5394067A (en) * 1992-03-27 1995-02-28 Discom Inc. Regulated high DC voltage supply
JP2002034244A (en) * 2000-07-11 2002-01-31 Sony Corp Switching power supply circuit
US20040141340A1 (en) * 2001-03-09 2004-07-22 Masayuki Yasumura Switching power supply circuit
CN102739101A (en) * 2012-06-20 2012-10-17 东南大学 Forward-flyback inverter
CN104483632A (en) * 2014-12-22 2015-04-01 东风汽车公司 Simulator for vehicle-mounted Li-BMS monomers
CN204441270U (en) * 2015-02-12 2015-07-01 北京北方微电子基地设备工艺研究中心有限责任公司 A kind of electrostatic chuck systems

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