CN115333381A - High-pressure silicon wafer adsorption system applied to etching machine - Google Patents
High-pressure silicon wafer adsorption system applied to etching machine Download PDFInfo
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- CN115333381A CN115333381A CN202211248198.6A CN202211248198A CN115333381A CN 115333381 A CN115333381 A CN 115333381A CN 202211248198 A CN202211248198 A CN 202211248198A CN 115333381 A CN115333381 A CN 115333381A
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- 238000005530 etching Methods 0.000 title claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 23
- 239000010703 silicon Substances 0.000 title claims abstract description 23
- 238000001179 sorption measurement Methods 0.000 title claims abstract description 23
- 238000004804 winding Methods 0.000 claims abstract description 32
- 239000003990 capacitor Substances 0.000 claims description 21
- 238000005070 sampling Methods 0.000 claims description 15
- 230000008859 change Effects 0.000 abstract description 3
- 230000003068 static effect Effects 0.000 abstract description 3
- 235000014676 Phragmites communis Nutrition 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 230000009123 feedback regulation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33507—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0083—Converters characterised by their input or output configuration
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/14—Arrangements for reducing ripples from dc input or output
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33561—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having more than one ouput with independent control
Abstract
The invention belongs to the technical field of silicon wafer adsorption, and particularly relates to a high-voltage silicon wafer adsorption system applied to an etching machine, which comprises an input module, a flyback converter and a voltage polarity control module; through the arrangement of the flyback converter, a topological structure based on the flyback converter is applied, high-multiple voltage gain is realized, the problems of high order and low efficiency are avoided, the first winding and the second winding on the secondary side are reversely connected in series, the zero potential in the middle of the secondary side of a single converter is realized, and the upper end and the lower end of the single converter are respectively used for outputting positive and negative potential voltages; through the setting of voltage polarity control module, through being four switching unit diagonal switches on that the H bridge type was arranged and can realize the change to load both ends polarity under the static prerequisite of holding the load to voltage stress is lower.
Description
Technical Field
The invention belongs to the technical field of silicon wafer adsorption, and particularly relates to a high-pressure silicon wafer adsorption system applied to an etching machine.
Background
In the process of etching the chip by the etching machine, the chip needs to be provided with high-voltage positive charges to absorb electrons, and the chip needs to be provided with high-voltage negative charges to repel the electrons after the etching is finished. Therefore, a device is needed for realizing the pressurization of the chip by the high-voltage direct current, and the exchange of the positive electrode and the negative electrode of the pressurization is needed.
In the prior art, if a method for realizing high-voltage direct current is adopted, the direct current is inverted, and is boosted by a transformer and then rectified, so that more steps are needed, and larger energy loss is easily generated; if the alternating current is directly boosted and then rectified, the device can face serious stress problems in a high-voltage environment; if a common DC-DC converter is adopted, extremely high voltage gain is difficult to obtain, and the pursuit of excessively high voltage gain for the DC-DC converter brings about high-order problems and power loss problems. In addition, the adopted method is difficult to realize that two-stage outputs of a single converter are respectively provided with positive and negative charges.
In the prior art, the method for realizing the transfer of the positive and negative charges of the load can greatly influence the precision of an etching machine if the direction of the load is directly transferred, and directly influences the yield of production equipment; if the four switching tubes form an H-bridge structure to realize the exchange of the positive electrode and the negative electrode, the load can be kept static, but the four switching tubes of the H-bridge structure all face the problem of voltage stress under high voltage.
Disclosure of Invention
In order to solve the technical problems in the prior art, the invention provides a high-voltage silicon wafer adsorption system applied to an etchant.
A high-voltage silicon chip adsorption system applied to an etching machine comprises an input module, a flyback converter and a voltage polarity control module;
the input module is used for providing a driving signal and power;
the flyback converter comprises a transformer, the primary side of the transformer receives a driving signal and power from an input module, the secondary side of the transformer comprises two groups of windings, and each group of windings is respectively connected with a diode in series and then is connected with a capacitor and an output resistor in parallel; the zero potential end of the first winding is connected with the high potential end of the second winding, and the high potential end of the first winding and the zero potential end of the second winding form a direct-current voltage output end;
the voltage polarity control module is composed of four switch units which are arranged in an H bridge mode, and each switch unit comprises a relay and a triode; one end of a coil of the relay receives power from the input module, and the other end of the coil of the relay is connected with a collector of the triode; the emitter of the triode is grounded, and the base receives a driving signal from the input module; the contact point end of the relay comprises a first contact point end and a second contact point end, the first contact point end is connected with a load, and the second contact point end is connected with a direct-current voltage output end.
Further, the flyback converter further comprises an LC filter circuit, and the DC voltage output end is connected with the LC filter circuit.
Further, the input module comprises a signal input circuit for providing a driving signal; the flyback converter further comprises a driving circuit and a switching tube, wherein the output end of the driving circuit is connected with the control end of the switching tube, and the switching tube is connected with the winding on the primary side in series; the signal input circuit outputs a first control signal to the driving circuit and controls the on or off of the switching tube.
Further, when the signal input circuit outputs a first control signal to the driving circuit and drives the switching tube to be conducted, the input voltage of the input module is applied to two ends of the primary side of the transformer through the switching tube, the diode is blocked reversely, and the direct-current voltage output end is stabilized by the capacitor; when the signal input circuit outputs a first control signal to the driving circuit and drives the switching tube to be switched off, the secondary side winding of the transformer is output to the direct-current voltage output end through the diode, and meanwhile, the capacitor is charged.
Further, the output of the signal input circuit further includes a second control signal and a third control signal, the second control signal is connected to the bases of the triodes of the two switching units, and the third control signal is connected to the bases of the triodes of the other two switching units.
Further, when the second control signal controls the two triodes of the two connected switch units to be respectively conducted and enables the two relay contact ends to be respectively closed, the third control signal controls the two triodes of the other two connected switch units to be respectively turned off and enables the other two relay contact ends to be respectively disconnected, two ends of the direct-current voltage output end are respectively connected to two ends of the load in the forward direction through the two conducted relays; when the second control signal controls the two triodes of the two connected switch units to be respectively turned off and the two relay contact ends to be respectively disconnected, the third control signal controls the two triodes of the other two connected switch units to be respectively conducted and the other two relay contact ends to be respectively closed, the two ends of the direct-current voltage output end are respectively reversely connected to the two ends of the load through the two conducted relays.
Furthermore, the load-balancing circuit also comprises a sampling circuit, and the sampling circuit is connected with the load in parallel.
Further, the sampling circuit comprises a plurality of current limiting resistors connected in series.
Furthermore, each switch unit further comprises a voltage-stabilizing capacitor, one end of the voltage-stabilizing capacitor is connected with one end of the relay coil, which is connected with the power supply, and the other end of the voltage-stabilizing capacitor is grounded.
Further, a coil of the relay of each of the switching units is connected in reverse parallel with a freewheeling diode.
Further, the relay is a dry-reed relay.
Further, the triode is a normally-on device or a normally-off device.
Further, the input module further includes a power input circuit for providing a power input to the system, the power input circuit output includes a first power input, a second power input, and a third power input, the first power input is connected to the driving circuit, the second power input is connected to the coil of the relay, and the third power input is connected to the primary side of the transformer.
Has the advantages that:
1. the invention provides a high-voltage silicon chip adsorption system applied to an etching machine, which realizes high-multiple voltage gain and avoids the problems of high order and low efficiency by arranging a flyback converter and applying a topological structure based on the flyback converter, and realizes the zero potential in the middle of the secondary side of a single converter by connecting a first winding and a second winding of the secondary side in series in a reverse direction, wherein the upper end and the lower end of the single converter are respectively used for outputting positive and negative potential voltages; through the setting of voltage polarity control module, through being four switching unit diagonal switches on that the H bridge type was arranged and can realize the change to load both ends polarity under the static prerequisite of holding the load to voltage stress is lower.
2. According to the invention, the sampling circuit is connected in parallel with the load, so that the voltage on the load can be sampled in real time, and the feedback regulation of the load voltage is facilitated; the sampling circuit is connected with a plurality of current-limiting resistors in series, so that the current of the sampling loop is limited under the high voltage at two ends of the load, and the sampling circuit is protected from being burnt out; through the signal input circuit arranged on the input module and outputting a driving signal to the driving circuit to control the work of the switching tube, the input of the primary side power supply of the flyback converter is controlled, and the secondary side is driven to complete the output of high-voltage direct current.
3. The base electrodes of the two triodes are connected through the second control signal, the base electrodes of the other two triodes are connected through the third control signal, so that the diagonal conduction of the four relays is controlled, and the polarity exchange of the two output ends of the flyback converter at the two ends of the load is realized; the normal work of the voltage polarity control module under high voltage is ensured and the reliability of the voltage polarity control module is ensured through the arrangement of the reed relay with high voltage resistance.
4. According to the invention, the LC filter circuit is arranged at the output end of the flyback converter, so that the interference of the stray waves is prevented. The coil end of the relay of the switch unit is connected with the voltage stabilizing capacitor and the coil is connected with the freewheeling diode in a reverse parallel mode, a freewheeling path is provided for the coil to avoid sudden change of current, the triode is prevented from being broken down by high voltage, stable work of the relay is guaranteed, and reliability of the switch unit is improved.
Drawings
FIG. 1 is a schematic diagram of the overall circuit structure of the present invention;
fig. 2 is a diagram of two simplified conduction modes of the flyback converter circuit of the present invention;
fig. 3 is two conduction mode diagrams of the voltage polarity control circuit of the present invention.
Reference numerals are as follows: 1. an input module; 11. a signal input circuit; 12. a power input circuit; 2. a flyback converter; 21. a primary side; 22. a first winding; 23. a second winding; 24. a diode; 25. a capacitor; 26. an output resistor; 27. a drive circuit; 28. a switching tube; 29. an LC filter circuit; 3. a voltage polarity control module; 31. a relay; 32. a triode; 33. a sampling circuit; 34. a voltage stabilizing capacitor; 35. a freewheeling diode; 4. a load;
VIN1, a first power input; VIN2, a second power input; VIN3, a third power input; OUT1, a first control signal; OUT2, a second control signal; OUT3, a third control signal.
Detailed Description
In order to make those skilled in the art better understand the technical solutions in the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The embodiment provides a high-voltage silicon chip adsorption system applied to an etching machine, which is shown in fig. 1 and comprises an input module 1, a flyback converter 2 and a voltage polarity control module 3;
the input module 1 comprises a signal input circuit 11 and a power input circuit 12 for providing a driving signal and power;
the flyback converter 2 comprises a transformer, the primary side 21 of the transformer receives a driving signal and power from the input module 1, the secondary side of the transformer comprises two groups of windings, and each group of windings is respectively connected with a diode 24 in series and then connected with a capacitor 25 and an output resistor 26 in parallel; the zero potential end of the first winding 22 is connected with the high potential end of the second winding 23, and the high potential end of the first winding 22 and the zero potential end of the second winding 23 form a direct-current voltage output end;
the voltage polarity control module 3 is composed of four switch units arranged in an H-bridge manner, and each switch unit comprises a relay 31 and a triode 32; one end of a coil of the relay 31 receives working power from the input module 1, and the other end of the coil is connected with a collector of the triode 32; the emitter of the triode 32 is grounded, and the base receives a driving signal from the input module 1; the contact terminals of the relay 31 include a first contact terminal connected to the load 4 and a second contact terminal connected to the dc voltage output terminal.
In particular, the input module 1 comprises a signal input circuit 11 for providing a drive signal; the flyback converter 2 further includes a driving circuit 27 and a switching tube 28, an output end of the driving circuit 27 is connected to a control end of the switching tube 28, and the switching tube 28 is connected in series with the winding of the primary side 21; the signal input circuit 11 outputs a first control signal OUT1 to the driving circuit 27, and controls the switching tube 28 to be turned on or off.
The input module 1 further includes a power input circuit 12, configured to provide power input for a system, where the output of the power input circuit 12 includes a first power input VIN1, a second power input VIN2, and a third power input VIN3, the first power input VIN1 is connected to the driving circuit 27 and provides working power for the driving circuit 27, the second power input VIN2 is connected to the coil of the relay 31 and provides working power for the relay 31, and the third power input VIN3 is connected to the primary side of the transformer and provides a power signal of amplified potential for the transformer.
Referring to fig. 2, when the switching tube 28 is turned on or off, the flyback converter 2 may be divided into two operating modes, when the signal input circuit 11 outputs the first control signal OUT1 to the driving circuit 27 and drives the switching tube 28 to be turned on, the input voltage of the input module 1 is applied to both ends of the primary side 21 of the transformer through the switching tube 28, the diode 24 is blocked in the reverse direction, and the dc voltage output end is regulated by the capacitor 25; when the signal input circuit 11 outputs a first control signal OUT1 to the driving circuit 27 and drives the switching tube 28 to turn off, the secondary winding of the transformer is output to the dc voltage output end through the diode 24, and the capacitor 25 is charged; thereby outputting a stable high voltage dc at the output terminal of the flyback converter 2.
In an embodiment of the present invention, the primary side 21 of the flyback converter 2 is connected to the third power input VIN3 and inputs a dc power signal, the turn ratio of the primary side coil to the secondary side coil is preset according to design requirements, the first control signal OUT1 drives the switching tube 28 to be turned on or off, and the flyback converter 2 is switched between two operating modes, and since the zero point loaded by the first winding 22 is connected to the high potential loaded by the second winding 23, the dc voltage output end of the flyback converter 2 has a dc power with a large output range, as shown in an embodiment, the third power input VIN3 and the input dc power signal are 24V, and the output range of the flyback converter 2 is +2000V to-2000V.
The output of the signal input circuit 11 further includes a second control signal OUT2 and a third control signal OUT3, the second control signal OUT2 is connected to the bases of the triodes 32 of the two switching units, and the third control signal OUT3 is connected to the bases of the triodes 32 of the other two switching units.
Specifically, the voltage polarity control module 3 includes four reed relays 31, four triodes 32, and four freewheeling diodes 35, each of the four switch units includes one relay 31, one triode 32, one freewheeling diode 35, and one voltage-stabilizing capacitor 34, and the four switch units are arranged in an H-bridge configuration; the four coils of the reed relay 31 are connected with a second power input VIN2 of 24V direct current, and working power for enabling the coil of the relay 31 to generate a magnetic field to drive the armature at the contact end is provided; the reed relay 31 has high voltage resistance, so that the normal work of the voltage polarity control module 3 under high voltage is ensured, and the reliability of the voltage polarity control module 3 is ensured; transistor 32 may be a normally-on device or a normally-off device.
In the switch unit, the coil of the voltage-stabilizing relay 31 is connected in parallel and then connected in series with the triode 32, the triode 32 is driven by the signal input circuit 11 to be switched on or switched off, when the driving signal is positive, the current flows through the coil of the relay 31 through the conducted triode 32 and generates a magnetic field to attract the armatures at the contact ends together, the relay 31 realizes the access, and when the driving signal is zero or negative, the armatures are switched off, and the relay 31 realizes the circuit breaking.
One end of a voltage-stabilizing capacitor 34 is connected with one end of the coil of the relay 31 which is connected with a power supply, and the other end of the voltage-stabilizing capacitor 34 is grounded; a free-wheeling diode 35 is connected in reverse parallel with a coil of the relay 31 to provide a free-wheeling path for the coil so as to prevent current from suddenly changing and prevent the triode 32 from being broken down by high voltage;
referring to fig. 3, when the second control signal OUT2 controls the two transistors 32 of the two connected switching units to be respectively turned on and the contact terminals of the two relays 31 to be respectively closed, and the third control signal OUT3 controls the two transistors 32 of the other two connected switching units to be respectively turned off and the contact terminals of the other two relays 31 to be respectively opened, the two terminals of the dc voltage output terminal are respectively connected to the two terminals of the load 4 in the forward direction through the two turned-on relays 31; when the second control signal OUT2 controls the two triodes 32 of the two connected switch units to be respectively turned off and the contact ends of the two relays 31 to be respectively disconnected, the third control signal OUT3 controls the two triodes 32 of the other two connected switch units to be respectively turned on and the contact ends of the other two relays 31 to be respectively closed, the two ends of the direct-current voltage output end are respectively reversely connected to the two ends of the load 4 through the two turned-on relays 31; thereby realizing the conversion of the positive and negative voltage at the two ends of the load 4.
Specifically, the transistor 32 is an NPN transistor; when the two triodes 32 controlled by the second control signal OUT2 are turned on, the other two triodes 32 controlled by the third control signal OUT3 are turned off, the first end of the voltage output of the flyback converter 2 is connected to the first end of the load 4, and the second end of the voltage output of the flyback converter 2 is connected to the second end of the load 4; when the two transistors 32 controlled by the second control signal OUT2 are turned off, the other two transistors 32 controlled by the third control signal OUT3 are turned on, the first end of the voltage output of the flyback converter 2 is connected to the second end of the load 4, and the second end of the voltage output of the flyback converter 2 is connected to the first end of the load 4, so that the polarity conversion of the voltage output of the flyback converter 2 at the two ends of the load 4 is completed through the second control signal OUT2 and the third control signal OUT 3.
As a further improvement of this embodiment, the flyback converter 2 further includes an LC filter circuit 29, and the dc voltage output terminal is connected to the LC filter circuit 29, so as to prevent interference of noise and ensure stability of high-voltage dc output of the flyback converter 2.
The load 4 is also connected with a sampling circuit 33 in parallel, so that the voltage on the load 4 can be sampled in real time, and the feedback adjustment of the voltage of the load 4 is facilitated; and by connecting a plurality of current limiting resistors in series with the sampling circuit 33, the current of the sampling loop is limited under the high voltage at the two ends of the load 4, so that the sampling circuit 33 is protected from being burnt out.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several equivalent substitutions or obvious modifications can be made without departing from the spirit of the invention, and all the properties or uses are considered to be within the scope of the invention.
Claims (13)
1. A high-voltage silicon chip adsorption system applied to an etching machine is characterized by comprising an input module (1), a flyback converter (2) and a voltage polarity control module (3);
the input module (1) is used for providing a driving signal and power;
the flyback converter (2) comprises a transformer, a primary side (21) of the transformer receives a driving signal and power from the input module (1), a secondary side of the transformer comprises two groups of windings, and each group of windings is connected with a diode (24) in series and then connected with a capacitor (25) and an output resistor (26) in parallel; the zero potential end of the first winding (22) is connected with the high potential end of the second winding (23), and the high potential end of the first winding (22) and the zero potential end of the second winding (23) form a direct-current voltage output end;
the voltage polarity control module (3) is composed of four switch units which are arranged in an H bridge mode, and each switch unit comprises a relay (31) and a triode (32); one end of a coil of the relay (31) receives power from the input module (1), and the other end of the coil is connected with a collector of the triode (32); the emitter of the triode (32) is grounded, and the base receives a driving signal from the input module (1); the contact point end of the relay (31) comprises a first contact point end and a second contact point end, the first contact point end is connected with a load (4), and the second contact point end is connected with a direct-current voltage output end.
2. The high-voltage silicon chip adsorption system applied to the etching machine is characterized in that the flyback converter (2) further comprises an LC filter circuit (29), and the DC voltage output end is connected with the LC filter circuit (29).
3. The high-voltage silicon wafer adsorption system applied to the etching machine according to claim 1, wherein the input module (1) comprises a signal input circuit (11) for providing a driving signal; the flyback converter (2) further comprises a driving circuit (27) and a switching tube (28), wherein the output end of the driving circuit (27) is connected with the control end of the switching tube (28), and the switching tube (28) is connected with the winding of the primary side (21) in series; the signal input circuit (11) outputs a first control signal (OUT 1) to the drive circuit (27) and controls the switch tube (28) to be switched on or off.
4. The high-voltage silicon wafer adsorption system applied to the etching machine according to claim 3, wherein when the signal input circuit (11) outputs a first control signal (OUT 1) to the driving circuit (27) and drives the switch tube (28) to conduct, an input voltage of the input module (1) is applied to two ends of the primary side (21) of the transformer through the switch tube (28), the diode (24) is blocked in a reverse direction, and a direct-current voltage output end is stabilized by the capacitor (25); when the signal input circuit (11) outputs a first control signal (OUT 1) to the driving circuit (27) and drives the switching tube (28) to be switched off, the secondary side winding of the transformer is output to the direct-current voltage output end through the diode (24), and meanwhile, the capacitor (25) is charged.
5. The high-voltage silicon wafer adsorption system applied to the etching machine as claimed in claim 3, wherein the output of the signal input circuit (11) further comprises a second control signal (OUT 2) and a third control signal (OUT 3), the second control signal (OUT 2) is connected with the bases of the triodes (32) of the two switching units, and the third control signal (OUT 3) is connected with the bases of the triodes (32) of the other two switching units.
6. The high-voltage silicon wafer adsorption system applied to the etching machine, according to claim 5, wherein when the second control signal (OUT 2) controls the two triodes (32) of the two connected switch units to be respectively conducted and makes the contact ends of the two relays (31) to be respectively closed, and the third control signal (OUT 3) controls the two triodes (32) of the other two connected switch units to be respectively turned off and makes the contact ends of the other two relays (31) to be respectively opened, the two ends of the direct-current voltage output end are respectively connected to the two ends of the load (4) in a forward direction through the two conducted relays (31); when the two triodes (32) of the two switch units connected under the control of the second control signal (OUT 2) are respectively turned off and the contact ends of the two relays (31) are respectively turned off, the two triodes of the other two switch units connected under the control of the third control signal (OUT 3) are respectively turned on and the contact ends of the other two relays (31) are respectively turned on, the two ends of the direct-current voltage output end are respectively reversely connected to the two ends of the load (4) through the two turned-on relays (31).
7. The high-voltage silicon wafer adsorption system applied to the etching machine as claimed in claim 1, further comprising a sampling circuit (33), wherein the sampling circuit (33) is connected in parallel with the load (4).
8. The high-voltage silicon wafer adsorption system applied to the etching machine as recited in claim 7, wherein the sampling circuit (33) comprises a plurality of current limiting resistors connected in series.
9. The high-voltage silicon wafer adsorption system applied to the etching machine according to claim 1, wherein each switch unit further comprises a voltage-stabilizing capacitor (34), one end of the voltage-stabilizing capacitor (34) is connected with one end of the coil of the relay (31) connected with a power supply, and the other end of the voltage-stabilizing capacitor (34) is grounded.
10. The high-voltage silicon wafer adsorption system applied to the etching machine is characterized in that a coil of a relay (31) of each switch unit is connected with a freewheeling diode (35) in an anti-parallel mode.
11. The high-voltage silicon chip adsorption system applied to the etching machine as claimed in claim 1, wherein the relay (31) is a dry-reed relay.
12. The high-voltage silicon wafer adsorption system applied to the etching machine as claimed in claim 1, wherein the triode (32) is a normally-on device or a normally-off device.
13. The high-voltage silicon wafer adsorption system applied to the etching machine, as set forth in claim 3, wherein the input module (1) further comprises a power input circuit (12) for providing a power input to the system, the output of the power input circuit (12) comprises a first power input (VIN 1), a second power input (VIN 2) and a third power input (VIN 3), the first power input (VIN 1) is connected with the driving circuit (27), the second power input (VIN 2) is connected with the coil of the relay (31), and the third power input (VIN 3) is connected with the primary side of the transformer.
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| CN115333381B (en) | 2023-01-20 |
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