CN115332036A - Ion implantation device and method - Google Patents
Ion implantation device and method Download PDFInfo
- Publication number
- CN115332036A CN115332036A CN202210887666.8A CN202210887666A CN115332036A CN 115332036 A CN115332036 A CN 115332036A CN 202210887666 A CN202210887666 A CN 202210887666A CN 115332036 A CN115332036 A CN 115332036A
- Authority
- CN
- China
- Prior art keywords
- electrode
- ion implantation
- lower electrode
- porous
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/336—Changing physical properties of treated surfaces
- H01J2237/3365—Plasma source implantation
Abstract
The invention discloses an ion implantation device and a method, wherein the ion implantation device comprises an upper electrode, a porous electrode and a lower electrode which are arranged in parallel, the porous electrode is positioned between the upper electrode and the lower electrode, the upper electrode is connected with alternating voltage, the porous electrode is grounded, the lower electrode is connected with a direct current pulse negative voltage, a plasma generation area is arranged between the upper electrode and the porous electrode, and an ion implantation area is arranged between the porous electrode and the lower electrode. The invention realizes the physical isolation of the plasma generation area and the ion injection area, thereby avoiding the surface damage and the chemical structure change of the processed sample caused by the physical etching of the plasma.
Description
Technical Field
The present invention relates to the field of plasma processing, and more particularly, to an ion implantation apparatus and method.
Background
The ion implantation technology is a technology for accelerating the injection of ions into the surface layer of a solid sample under the action of an electric field. Ions collide with atoms near the surface layer of the sample in the process of bombarding the surface of the sample, and the ions lose energy in the process of collision and stay in the surface layer of the sample. The injected ions interact with atoms in the sample to form a new phase, the appearance, phase composition, organizational structure and the like of the surface and near-surface layer of the sample can be changed, and the physical, chemical, mechanical and other properties of the material can be obviously changed, so that the possibility is provided for various future applications of the material.
Ion implantation is mainly divided into two methods: ion Beam Ion Implantation (IBII) and Plasma Immersion Ion Implantation (PIII).
The beam line ion implantation is developed in the 60's of the 20 th century, and has important application in the aspects of semiconductor material surface modification, metal surface property improvement and the like. However, beam-line ion implantation has inherent limitations of directionality, and non-uniform implant dose and difficult batch processing may result when processing non-planar samples. In addition, the ion implanter has complex equipment technology, high investment cost and the like, and the purchase cost of a single prototype reaches thousands of yuan, thereby seriously limiting the application of the ion implanter in the material subdivision industry. In view of the technical problems of beam line ion implantation, improved ion implantation techniques have been proposed, such as: ion beam mixing technology, multi-ion beam deposition technology, particle beam assisted coating technology and the like. However, the partial improvement technology still depends on the original technical features of the particle beam ion implantation, makes up for the deficiencies of the original technology and increases the technical complexity, and cannot greatly reduce the application cost of the ion implantation industry.
The realization of plasma immersion ion implantation requires a radio frequency power supply and other devices to generate plasma in low air pressure, and the ion implantation is realized by applying negative pulse bias voltage to a processed sample, so that the processing of the sample with an irregular three-dimensional shape can be realized. However, this method requires high-cost power source such as radio frequency to generate large-volume plasma to completely immerse the sample to be processed, the energy utilization rate is low, and physical etching and chemical structure change are easily formed on the surface of the sample to be processed due to the long-time immersion in the plasma, which affects the surface performance.
Disclosure of Invention
In order to overcome the above-mentioned shortcomings of the prior art, the present invention provides an ion implantation apparatus and method.
The invention adopts the following technical scheme:
in a first aspect, an ion implantation apparatus is provided, which includes an upper electrode, a porous electrode, and a lower electrode, which are disposed in parallel, wherein the porous electrode is located between the upper electrode and the lower electrode, the upper electrode is connected to an ac voltage, the porous electrode is grounded, the lower electrode is connected to a dc pulse negative voltage, a plasma generation region is located between the upper electrode and the porous electrode, and an ion implantation region is located between the porous electrode and the lower electrode.
In a preferred embodiment, the negative voltage of the direct current pulse is in the form of nanosecond pulses with a frequency of 1-10 khz and a voltage amplitude of 0-100kV.
In a preferred embodiment, the alternating voltage is in the form of a sine wave or a pulse, with a frequency of 1-50kHz and a voltage amplitude of 0-20kV.
In a preferred embodiment, a first insulating medium is further arranged on the upper electrode, and the first insulating medium at least covers one surface of the upper electrode, which is opposite to the porous electrode; and/or the porous electrode is a porous electrode wrapped by an insulating medium, and the area of each hole is less than or equal to 100mm 2 。
In a preferred embodiment, the distance between the porous electrode and the upper electrode is more than or equal to 1mm; the distance between the porous electrode and the lower electrode is more than or equal to 1mm.
In a preferred embodiment, the upper electrode, the porous electrode and the lower electrode are all the same in shape as the surface of the sample to be processed; or the upper electrode, the porous electrode and the lower electrode are all flexible electrodes, and the lower electrode is used for being completely attached to a processed sample.
In a preferred embodiment, a second insulating medium is further arranged on the lower electrode, and the second insulating medium at least covers one surface of the lower electrode, which is opposite to the porous electrode; or the lower electrode is a porous lower electrode, and the area of each hole is less than or equal to 100mm 2 Preferably, the porous lower electrode is a porous lower electrode wrapped by an insulating medium. .
In a second aspect, there is also provided a method for performing ion implantation using the ion implantation apparatus of the first aspect, including the steps of:
s1, placing a sample to be processed in an ion injection region between the porous electrode and the lower electrode;
s2, generating plasma in a plasma generating region between the upper electrode and the porous electrode through the alternating voltage, wherein charged particles in the plasma are diffused to an ion injection region between the porous electrode and the lower electrode under the principle of bipolar diffusion;
s3, through the direct current pulse negative voltage, positive ions entering the ion injection area can accelerate to move towards the lower electrode under the action of an electric field, and negative ions and electrons can rebound back to the plasma generation area under the action of the electric field, so that particle screening is completed;
and S4, accelerating the positive ions moving to the lower electrode to realize the ion injection of the processed sample.
In a preferred embodiment, in the step S3, the ion implantation density is adjusted by changing at least one of the frequency, the pulse width and the duty ratio of the dc pulse negative voltage, and the processing time, and the ion implantation depth is adjusted by changing the amplitude of the dc pulse negative voltage.
In a preferred embodiment, in step S1, the processed sample is placed above the lower electrode within the ion implantation region.
In a preferred embodiment, in step S1, the processed sample is placed in the ion implantation region above the lower electrode; or the processed sample is placed in the ion implantation area and attached to the lower surface of the lower electrode, the lower electrode is a porous lower electrode, and the area of each hole is less than or equal to 100mm 2 。
Compared with the prior art, the invention has the advantages that: the invention provides an Ion Implantation device and method, wherein an upper electrode is connected with alternating voltage, a porous electrode is grounded, a lower electrode is connected with direct current pulse negative voltage, and positive ions in Plasma are introduced into an accelerating electric field by utilizing a Plasma bipolar diffusion principle to realize Ion Implantation. The invention also has the advantages of simplicity, no need of special power supplies (such as an electron gun and a radio frequency power supply), no need of generating large-volume plasma and the like, improves the energy utilization rate, effectively reduces the application cost of ion implantation, solves the problems of complexity and high cost of the existing ion implantation technology, and is expected to realize reliable application in the material subdivision field (such as high polymer materials of electronic components, automobile non-metal accessories and the like).
In addition, in some embodiments, the following effects are also provided:
the invention can design the electrode structure according to the surface shape of the sample, and the shape of the three electrodes is the same as the surface shape of the processed sample, so as to solve the problem of uneven ion implantation of the non-planar sample, thereby realizing the effect of even ion implantation of the irregular three-dimensional sample.
Drawings
Fig. 1 is a schematic view of an ion implantation apparatus according to an embodiment of the present invention;
fig. 2 is a schematic view of an ion implantation apparatus according to another embodiment of the present invention;
fig. 3 is a schematic view of an ion implantation apparatus according to still another embodiment of the present invention.
Detailed Description
The embodiments of the present invention will be described in detail below. It should be emphasized that the following description is merely exemplary and is not intended to limit the scope and application of the present invention, embodiments and features of the embodiments in the present application may be combined with each other without conflict
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element. In addition, the connection may be for either a fixed or coupled or communicating function.
It is to be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in an orientation or positional relationship indicated in the drawings for convenience in describing the embodiments of the present invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed in a particular orientation, and be in any way limiting of the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the embodiments of the present invention, "a plurality" means two or more unless specifically limited otherwise.
Referring to fig. 1, an embodiment of the present invention provides an ion implantation apparatus, which includes an upper electrode 1, a porous electrode 2, and a lower electrode 3, which are disposed in parallel, wherein the porous electrode 2 is disposed between the upper electrode 1 and the lower electrode 3, the upper electrode 1 is connected to an ac voltage 4, the porous electrode 2 is grounded, the lower electrode 3 is connected to a dc pulse negative voltage 5, a plasma generation region 6 is disposed between the upper electrode 1 and the porous electrode 2, and an ion implantation region 7 is disposed between the porous electrode 2 and the lower electrode 3. The alternating voltage 4 connected with the upper electrode 1 is used for generating plasma between the upper electrode 1 and the porous electrode 2, the direct current pulse negative voltage 5 connected with the lower electrode 3 is used for forming a strong electric field required by ion implantation between the porous electrode 2 and the lower electrode 3, the porous electrode 2 is grounded and used for isolating the plasma and preventing the plasma from passing through holes of the porous electrode, the alternating voltage 4 applied between the upper electrode 1 and the porous electrode 2 and the direct current pulse electric field applied between the porous electrode 2 and the lower electrode 3 enable charged particles in the plasma to be diffused to the ion implantation area 7 under the principle of bipolar diffusion, positive ions entering the ion implantation area 7 are accelerated to move towards the lower electrode 3 under the action of the strong pulse electric field, negative ions and electrons entering the ion implantation area 7 are reversely rebounded to the plasma generation area 6 under the action of the electric field to complete particle screening, and the positive ions accelerated to move towards the lower electrode 1 are used for realizing the ion implantation of a processed sample.
In a preferred embodiment, the dc pulsed negative voltage 5 connected to the lower electrode 3 is in the form of nanosecond pulses with a frequency of 1-10 khz and a voltage amplitude of 0-100kV. The density of ion implantation can be adjusted by changing at least one of the frequency, pulse width and duty ratio of the dc pulse negative voltage and the processing time, and the depth of ion implantation can be adjusted by changing the amplitude of the dc pulse negative voltage.
In some preferred embodiments, the AC voltage 4 connected to the upper electrode 1 is sinusoidal or pulsed, with a frequency of 1-50kHz and a voltage amplitude of 0-20kV. The low-temperature plasma generation effect can be changed by modulating the alternating voltage, and the ion generation density can be adjusted.
Preferably, at least one of the upper electrode 1 and the intermediate porous electrode 2 is provided with an insulating medium.
In a preferred embodiment, the upper electrode 1 is further provided with a first insulating medium 8, the first insulating medium 8 covers at least one side of the upper electrode 1 opposite to the porous electrode 2, as shown in fig. 1, the first insulating medium 8 covers one side of the upper electrode 1 opposite to the porous electrode 2, that is, the first insulating medium 8 covers the bottom surface of the upper electrode 1, in other examples, the first insulating medium 8 may completely wrap the surface of the upper electrode 1, wherein the first insulating medium 8 may be organic glass, polytetrafluoroethylene (PTFE), or alumina ceramic, and the like. The first insulating medium 8 on the upper electrode 1 is optional, and in other embodiments, the first insulating medium 8 may not be provided.
In the preferred embodiment, the porous electrode 2 is a porous electrode wrapped by an insulating medium, and the area of each hole is less than or equal to 100mm 2 For example, the mesh electrode can be formed by weaving metal wires in a warp-weft manner, and then the surface of the mesh electrode is coated with an insulating medium, so that the mesh electrode can be used as a porous electrode, and the loss of ions on the porous electrode can be reduced by adopting the porous electrode coated with the insulating medium. Wherein, the wire diameter of the metal wire wrapped with the insulating medium is preferably not more than 0.5mm, and the area of each hole is not more than 100mm 2 The smaller wire diameter and pore area of the porous electrode 2 can increase the uniformity of ion implantation. The insulating medium can be organic glass or poly-tetra-nFluoroethylene (PTFE), alumina ceramics, or the like. The insulating medium on the porous electrode 2 is optional, and in other embodiments, the insulating medium may not be provided.
In a preferred embodiment, the distance between the porous electrode 2 and the upper electrode 1 is more than or equal to 1mm, and the distance between the porous electrode 2 and the lower electrode 3 is more than or equal to 1mm.
In a preferred embodiment, the upper electrode 1, the porous electrode 2 and the lower electrode 3 are all the same in shape as the surface of the processed sample, or the upper electrode 1, the porous electrode 2 and the lower electrode 3 are all the same in shape as the surface of the processed sample and are all flexible electrodes, and the lower electrode 3 is used for completely fitting the processed sample.
In a preferred embodiment, the lower electrode 3 is further provided with a second insulating medium 9, the second insulating medium covers at least one side of the lower electrode 3 opposite to the porous electrode 2, as shown in fig. 1, the second insulating medium 9 covers one side of the lower electrode 3 opposite to the porous electrode 2, that is, the second insulating medium 9 is on the top surface of the lower electrode 3, in other examples, the second insulating medium 9 may also completely wrap the surface of the lower electrode 3, wherein the second insulating medium 8 may be made of organic glass, polytetrafluoroethylene (PTFE), or alumina ceramic, or the like. The second insulating medium 9 on the lower electrode 3 is optional, and in other embodiments, the second insulating medium 9 may not be provided, or when the processed sample is an insulating material such as a high molecular polymer material, the processed sample may also be used as an insulating barrier material, so as to remove the second insulating medium 9 on the lower electrode 3.
When the processed sample 10 is subjected to ion implantation, the processed sample 10 is placed in the ion implantation area 7 between the porous electrode 2 and the lower electrode 3, and the three electrodes are placed in the closed discharge chamber, namely the ion implantation device further comprises the closed discharge chamber, wherein a preset working gas is introduced into the closed discharge chamber and is pumped to a low pressure, and the preferred gas pressure is not more than 1000Pa. By generating plasma between the upper electrode 1 and the porous electrode 2 by the ac voltage 4, charged particles in the plasma are diffused to a dc bias accelerating region (i.e., the ion implantation region 7) between the porous electrode 2 and the lower electrode 3 under the principle of bipolar diffusion (positive ions and electrons of the plasma are influenced by an electric field during diffusion). The physical isolation of the plasma generation region 6 and the ion implantation region 7 is realized by using a direct current bias electric field formed between the grounded porous electrode 2 and the lower electrode 3 connected with the negative voltage of the direct current pulse, so that the surface damage of the processed sample 10 caused by the physical etching of the plasma is avoided. The density and depth of ion implantation in the ion implantation area 7 can be adjusted, the density of ion implantation can be adjusted by changing at least one of the frequency, pulse width and duty ratio of the direct current pulse negative voltage 5 and the processing time, and the depth of ion implantation can be adjusted by changing the amplitude of the direct current pulse negative voltage 5, so as to achieve the predetermined surface modification effect on the processed sample 10.
Specifically, the method for performing ion implantation by using the ion implantation device comprises the following steps:
s1, placing a sample 10 to be processed in an ion implantation area 7, placing an ion implantation device in a closed discharge chamber, introducing preset working gas into the closed discharge chamber, and pumping to low pressure, wherein the gas pressure is not more than 1000Pa;
s2, generating low-temperature plasma in a plasma generation area 6 through an alternating voltage 4, wherein charged particles in the plasma are diffused to an ion implantation area 7;
s3, through the direct current pulse negative voltage 5, positive ions entering the ion injection area 7 are accelerated to move towards the lower electrode 3 under the action of an electric field, and negative ions and electrons reversely bounce back to the plasma generation area 6 under the action of the electric field, so that particle screening is completed;
and S4, accelerating the positive ions moving towards the lower electrode 3 to realize the ion implantation of the processed sample 10.
In the embodiment shown in FIG. 1, the sample 10 to be processed is placed above the lower electrode in the ion implantation region 7 (for example, on the upper surface of the lower electrode 3), but this is not limited thereto, and in other examples, the sample 10 to be processed may also be placed in the ion implantation region and attached to the lower surface of the lower electrode 3 (as shown in FIGS. 2 and 3 below), in which case, the lower electrode is a porous lower electrode, and the area of each hole is 100mm or less 2 。
In the embodiment shown in fig. 1, a flat Dielectric Barrier Discharge (DBD) mode is adopted, that is, the upper electrode 1, the porous electrode 2 and the lower electrode 3 are all provided with the insulating Dielectric as described above and are all flat. The embodiment of the invention is not limited to the mode of dielectric barrier discharge, and plasma is generated by discharge of a single dielectric barrier electrode structure or a non-dielectric barrier electrode structure, namely, the first insulating medium 8 on the upper electrode 1 and/or the insulating medium on the porous electrode 2 can be removed under specific conditions, and in addition, when the processed sample is an insulating material such as a high molecular polymer material, the processed sample can also be used as an insulating barrier material, so that the second insulating medium 9 on the lower electrode 3 can be removed.
The embodiment of the present invention is not limited to the flat plate electrode structure, and in other examples, three electrode structures may be designed specifically or flexible electrodes may be directly used according to the surface shape (such as spherical, prismatic, elliptical, etc.) of the sample 10 to be processed, and the shapes of the three electrodes are the same as the surface shape of the sample to be processed, so as to achieve the uniform ion implantation effect of the sample with an irregular three-dimensional shape.
As shown in fig. 2, the ion implantation apparatus according to another embodiment of the present invention is different from the ion implantation apparatus shown in fig. 1 in that an irregular electrode having the same shape as that of the irregular sample 24 to be processed is used, that is, the upper electrode 21, the porous electrode 22 and the lower electrode 23 are all irregular electrodes, the lower electrode 23 is porous, and the sample 24 to be processed is attached to the lower surface of the lower electrode 23.
As shown in fig. 3, the ion implantation apparatus according to still another embodiment of the present invention is different from the ion implantation apparatus shown in fig. 1 in that a flexible electrode having the same shape as the irregular sample 34 to be processed is used, that is, the upper electrode 31, the porous electrode 32, and the lower electrode 33 are all flexible electrodes, the lower electrode 33 is porous, and the sample 34 to be processed is attached to the lower surface of the lower electrode 23.
The non-immersion type ion implantation method based on the low-temperature plasma is different from the existing ion implantation technology, and the plasma generation and the ion implantation in the ion implantation method are optimized and improved on the basis of ensuring the reliability. The plasma generation is improved to avoid the use of an electron gun and a radio frequency power supply which are high in price, the physical isolation of the plasma and a processed sample is realized through the improvement of the ion injection, and the problems that the processed sample is immersed in the plasma to generate large-volume plasma, the plasma is physically etched and damaged and the like are avoided. Therefore, the embodiment of the invention can solve the problems of uneven ion injection of an irregularly processed sample, low energy utilization caused by large-volume plasma generation, physical etching and chemical structure change of the sample surface caused by plasma immersion, high cost and the like. The embodiment of the invention can be applied to all technical fields needing to modify the surface of a material (mainly a high polymer material).
The foregoing is a more detailed description of the invention in connection with specific/preferred embodiments and is not intended to limit the practice of the invention to those descriptions. It will be apparent to those skilled in the art that various substitutions and modifications can be made to the described embodiments without departing from the spirit of the invention, and these substitutions and modifications should be considered to fall within the scope of the invention. In the description of the present specification, reference to the description of "one embodiment," "some embodiments," "preferred embodiments," "example," "specific example," or "some examples" or the like means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Various embodiments or examples and features of various embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction. Although embodiments of the present invention and their advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the scope of the claims.
Claims (10)
1. The ion implantation device is characterized by comprising an upper electrode, a porous electrode and a lower electrode which are arranged in parallel, wherein the porous electrode is positioned between the upper electrode and the lower electrode, the upper electrode is connected with alternating voltage, the porous electrode is grounded, the lower electrode is connected with direct current pulse negative voltage, a plasma generation area is arranged between the upper electrode and the porous electrode, and an ion implantation area is arranged between the porous electrode and the lower electrode.
2. An ion implantation apparatus as defined in claim 1, wherein: the direct current pulse negative voltage is in a nanosecond pulse form, the frequency is 1-10k Hz, and the voltage amplitude is 0-100kV; the alternating voltage is in a sine or pulse form, the frequency is 1-50kHz, and the voltage amplitude is 0-20kV.
3. The ion implantation apparatus of claim 1, wherein: the upper electrode is also provided with a first insulating medium, and the first insulating medium at least covers one surface of the upper electrode, which is opposite to the porous electrode; and/or the porous electrode is a porous electrode wrapped by an insulating medium, and the area of each hole is less than or equal to 100mm 2 。
4. The ion implantation apparatus of claim 1, wherein: the distance between the porous electrode and the upper electrode is more than or equal to 1mm; the distance between the porous electrode and the lower electrode is more than or equal to 1mm.
5. An ion implantation apparatus as defined in claim 1, wherein: the shapes of the upper electrode, the porous electrode and the lower electrode are the same as the surface shape of a processed sample; or the upper electrode, the porous electrode and the lower electrode are all flexible electrodes, and the lower electrode is used for being completely attached to a processed sample.
6. The method of claim 1The ion implantation apparatus of (1), characterized in that: a second insulating medium is also arranged on the lower electrode and at least covers one surface of the lower electrode, which is opposite to the porous electrode; or the lower electrode is a porous lower electrode, and the area of each hole is less than or equal to 100mm 2 Preferably, the porous lower electrode is a porous lower electrode wrapped by an insulating medium.
7. A method for ion implantation using the ion implantation apparatus of any of claims 1-6, comprising the steps of:
s1, placing a sample to be processed in an ion injection region between the porous electrode and the lower electrode;
s2, generating plasma in a plasma generation area between the upper electrode and the porous electrode through the alternating voltage, wherein charged particles in the plasma are diffused to an ion injection area between the porous electrode and the lower electrode under the principle of bipolar diffusion;
s3, through the direct current pulse negative voltage, positive ions entering the ion injection area can accelerate to move towards the lower electrode under the action of an electric field, and negative ions and electrons can rebound back to the plasma generation area under the action of the electric field, so that particle screening is completed;
and S4, accelerating the positive ions moving to the lower electrode to realize the ion injection of the processed sample.
8. The method according to claim 7, wherein in step S3, the ion implantation density is adjusted by changing at least one of a frequency, a pulse width, and a duty ratio of the DC pulse negative voltage and the process time, and the ion implantation depth is adjusted by changing an amplitude of the DC pulse negative voltage.
9. The method of ion implantation according to claim 7, wherein in step S1, the sample to be processed is placed above the lower electrode in the ion implantation region.
10. The method according to claim 7, wherein in step S1, the processed sample is placed in the ion implantation region above the lower electrode; or the processed sample is placed in the ion implantation area and attached to the lower surface of the lower electrode, the lower electrode is a porous lower electrode, and the area of each hole is less than or equal to 100mm 2 。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210887666.8A CN115332036A (en) | 2022-07-26 | 2022-07-26 | Ion implantation device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210887666.8A CN115332036A (en) | 2022-07-26 | 2022-07-26 | Ion implantation device and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115332036A true CN115332036A (en) | 2022-11-11 |
Family
ID=83919945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210887666.8A Pending CN115332036A (en) | 2022-07-26 | 2022-07-26 | Ion implantation device and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115332036A (en) |
-
2022
- 2022-07-26 CN CN202210887666.8A patent/CN115332036A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3948857B2 (en) | Beam source | |
| CN108611623B (en) | Spraying coating device and method for inhibiting secondary electron yield of solid dielectric material | |
| JP4307628B2 (en) | Flat plate gas introduction device for CCP reaction vessel | |
| CN110965048A (en) | Coating equipment and electrode device and application thereof | |
| KR100835355B1 (en) | PLASMA Based ION IMPLANTATION APPARATUS | |
| TW201508806A (en) | Plasma processing device | |
| JP2007092108A5 (en) | ||
| WO2012090484A1 (en) | Cvd device and cvd method | |
| JP3220445B1 (en) | Surface treatment method for three-dimensional polymer material | |
| US20140265846A1 (en) | Scalable and uniformity controllable diffusion plasma source | |
| CN109192641B (en) | Penning cold cathode ion source | |
| JP4042817B2 (en) | Neutral particle beam processing equipment | |
| KR102017520B1 (en) | Plasma immersion ion implantation machine for low-pressure process | |
| JPH11288798A (en) | Plasma production device | |
| CN115332036A (en) | Ion implantation device and method | |
| KR100803825B1 (en) | Plasma etching system | |
| KR101055396B1 (en) | Solid element plasma ion implantation method and apparatus | |
| TW200822161A (en) | System and method for generating ions and radicals | |
| CN211595794U (en) | Coating equipment and electrode device thereof | |
| US20140335285A1 (en) | System of surface treatment and the method thereof | |
| KR20110090132A (en) | Plasma reactor have a variable capacitively coupled plasma | |
| KR100785404B1 (en) | Inductively coupled plasma antenna, apparatus and method for treating substrates using the same | |
| US11380528B2 (en) | Plasma processing apparatus | |
| JP4010201B2 (en) | Ion implantation into both hollow and external surfaces | |
| KR100469552B1 (en) | System and method for surface treatment using plasma |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |