CN1153311A - Method for forming array of thin film actuated mirrors - Google Patents
Method for forming array of thin film actuated mirrors Download PDFInfo
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- CN1153311A CN1153311A CN 96102420 CN96102420A CN1153311A CN 1153311 A CN1153311 A CN 1153311A CN 96102420 CN96102420 CN 96102420 CN 96102420 A CN96102420 A CN 96102420A CN 1153311 A CN1153311 A CN 1153311A
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Abstract
An inventive method for the manufacture of an array of MxN thin film actuated mirrors for use in an optical projection system includes the steps of: providing an active matrix; depositing a thin film sacrificial layer; creating an array of empty cavities in the thin film sacrificial layer; depositing an elastic layer; forming an array of conduits in the elastic layer; depositing a second thin film, a thin film electrodisplacive and a first thin film layers, successively; patterning the first thin film, the thin film electrodisplacive, the second thin film and the elastic layers, thereby forming an array of actuated mirror structures; forming a thin film protection layer completely covering each of the actuated mirror structures; removing the thin film sacrificial layer by using an etchant; rinsing away the etchant by using a rinse; removing the rinse by drying in a vacuum or by using a spin drying method; and removing the thin film protection layer, thereby forming the array of MxN thin film actuated mirrors.
Description
The present invention relates to optical projection system; More specifically, relate to a kind of improved method of making for a M * N who in this system, uses a film actuated reflection mirror array.
In the various video display systems that can utilize in present technique, optical projection system is knownly can provide extensive high-quality display.In this optical projection system, be radiated at equably on the array from the light of a lamp such as M * N catoptron that activates, wherein each catoptron is connected on each actuator.These actuators can be made by the material that a kind of electricity causes displacement, such as the response effect thereon electric field and the piezoelectricity or the electrostrictive material that are out of shape.
On being incident on a aperture from the light beam of each mirror reflects such as a shadow shield.By electric signal of effect on each actuator, just changed the relative position of each catoptron, thereby caused from the skew of the optical path of the light beam of each mirror reflects to incident beam.Along with the variation of the optical path of each folded light beam, changed the light quantity of the reflection of each catoptron by aperture, the intensity of having regulated light beam whereby.The light beam that to regulate by aperture just demonstrates an image in the above via being transmitted on the projection screen such as suitable optical device such as projecting lens.
Among Figure 1A to 1G, show the manufacturing step that is included in the array 100 of making a M * N film actuated catoptron 101, wherein M and N are integer, in common unsettled 08/430, No. 628 U. S. application owning together that this method is disclosed in " film actuated reflection mirror array " by name.
The technology of manufacturing array 100 has a upper surface and comprises the active matrix 10 of an array of a substrate 12, a M * N transistorized array (not shown) and M * N link 14 from preparation.
In step subsequently, waiting to remove layer 24 when film is with vacuum evaporating or evaporation method when being made of metal, waiting to remove layer 24 when film is to use chemical vapour deposition (CVD) or spin-coating method when making by silicic acid phosphorus glass (PSG), waiting to remove layer 24 when film is then to use the CVD method when being made by polysilicon, forms a film and wait to remove layer 24 on the upper surface of active matrix 10.
After this, form the supporting course 20 of arrays that comprise M * N supporting member 22 for the treatment of to surround by this film except that layer 24, wherein this supporting course 20 is to form with following method: wait to remove an array (not shown) that forms M * N dead slot on the layer 24 at film with photoetching process, respectively this dead slot is positioned at around the link 14; And constitute supporting member 22 at each dead slot that is arranged in around the link 14 with vacuum evaporating or CVD method, shown in Figure 1A.Supporting member 22 usefulness insulating material are made.
In next step, above supporting course 20, form the elastic layer 30 that the insulating material identical with supporting member 22 made with Sol-Gel (sol-gel), vacuum evaporating or CVD method.
Subsequently, form a conduit 26 that is made of metal with following method in each supporting member 22: at first make an array (not shown) in M * N hole with etching method, each hole extends to the end face of link 14 from the end face of elastic layer 30; Thereby and fill metal therein and form conduit 26, as shown in Figure 1B.
In next step, form second thin layer of making by conductive material 40 at elastic layer 30 tops that comprise conduit 26 with the vacuum evaporating method.Second thin layer 40 is connected electrically on the transistor by the conduit 26 that is formed in the supporting member 22.
Form a thin-film electro of making such as lead zirconium titanate piezoelectrics such as (PZT) with vacuum evaporating method, CVD method or Sol-Gel method at the top of second thin layer 40 then and cause displacement layer 50, as shown in Fig. 1 C.
In next step, with photoetching or laser pruning method thin-film electro is caused the pattern that displacement layer 50, second thin layer 40 and elastic layer 30 are made an array of array of a array that M * N thin-film electro cause displacement member 55, individual second membrane electrode 45 of M * N and M * N elastic component 35, till exposing supporting course 20, as shown in Fig. 1 D.Respectively this second membrane electrode 45 is connected electrically on the transistor by the conduit 26 that is formed in each supporting member 22, and as a signal electrode job in the film actuated catoptron 101.
Then, each thin-film electro of thermal treatment causes displacement member 55 so that it produces phase transformation, and forms a M * N array through heat treated structure whereby.Because each causes displacement member 55 through heat treated thin-film electro is fully thin, is in the situation about making with piezoelectric at it, there is no need to push away and supports it: because it can be pushed away support by the electric signal that is acted in the operating period of film actuated catoptron 101.
After the above-mentioned steps, constitute an array of M * N the first film electrode of making by a kind of conduction and reflective material 65 at M * N top that causes displacement member 55 through the thin-film electro in the array of heat treated structure with following method; At first with the vacuum evaporating method form fully cover the supporting course 20 that comprises exposure interior M * N through the top of the array of heat treated structure, with a layer 60 that conducts electricity and reflectorized material is made, as shown in Fig. 1 E; Remove this layer 60 selectively with etching method then, draw an array 110 of M * N mirror structure 111 that activates, the mirror structure 111 of wherein respectively this actuating comprises a top surface and four sides, as shown in Fig. 1 F.Each the first film electrode 65 is as a bias electrode job in a catoptron and the film actuated catoptron 101.
In the rapid back of previous step, cover top surface and four sides in the mirror structure 111 of respectively this actuating fully with a thinfilm protective coating (not shown).
The film that removes in the supporting course 20 with wet etch method waits to remove layer 24 then.Remove thinfilm protective coating at last, thereby constitute the array 100 of M * N film actuated catoptron 101, as shown in Fig. 1 G.
In the method for the array 100 of the film actuated catoptron 101 of above-mentioned manufacturing M * N, exist relevant certain inefficiencies.Remove film with etchant or chemicals and treat to use usually such as irrigations such as distilled water or methyl alcohol flushing etchant or chemicals, evaporate it then and remove irrigation except that after the layer 24.Yet when removing irrigation, the surface tension of irrigation might pull down elastic component 35 to active matrix 10, thereby elastic component 35 is sticked on the active matrix 10, and influences the performance of each film actuated catoptron 101.When the film actuated catoptron 101 of sufficient amount is subjected to this influence, also can reduce the overall performance of array 100.
Therefore, fundamental purpose of the present invention is can stick to a kind of method of the manufacturing of the generation on the active matrix for the array of the M * N that uses a film actuated catoptron by the minimizing elastic component in optical projection system when removing irrigation for providing.
According to one aspect of the present invention, a kind of method of making for the array of the M * N that uses in optical projection system film actuated catoptron is provided, wherein M and N are integer, this method comprises the steps: to provide one to comprise the array of a substrate, a M * N link and the active matrix of a M * N transistorized array, and wherein respectively this link is connected electrically on the transistor of a correspondence in the transistor array; Film of deposit waits to remove layer on the top of active matrix; Form the array of M * N to cavity in this film is treated except that layer, one of cavity of each centering surrounds a link; Wait to remove on the top of layer elastic layer made from insulating material of deposit at the film that comprises cavity; Form an array of M * N conduit in elastic layer, respectively this conduit extends on the link of a correspondence from the top of elastic layer; One second thin layer of deposit, a thin-film electro cause displacement layer and a first film layer in succession at the top of elastic layer, and wherein this second thin layer is made with conductive material, and this first film layer is made with conduction and reflectorized material; Respectively the first film layer, thin-film electro are caused displacement layer, second thin layer and elastic layer and make the pattern of the array of the array of the array of M * N the first film electrode, array that M * N thin-film electro causes displacement member, individual second membrane electrode of M * N and M * N elastic component, till exposed film is waited to remove layer, constitute an array of M * N mirror structure that activates whereby, respectively the mirror structure of this actuating has a top surface and side, and comprise the first film electrode, thin-film electro causes displacement member, second membrane electrode and elastic component; Form one and cover the top surface of the mirror structure that respectively should activate and the thinfilm protective coating of side fully; Remove film with etchant and wait to remove layer; Rinse out etchant with first irrigation; Remove first irrigation; And removal thinfilm protective coating, thereby the array of M * N film actuated catoptron of formation.
From the description of the preferred embodiment that provides below in conjunction with accompanying drawing, above-mentioned and other purpose of the present invention and feature will be conspicuous, in the accompanying drawing:
Figure 1A to 1G is the schematic cross sectional views of a kind of method of the array of M * N the thin catoptron that activates of the previously disclosed manufacturing of displaying; And
Fig. 2 A to 2F is the schematic cross sectional views of displaying according to a kind of method of the array of M * N film actuated catoptron of manufacturing of the present invention;
Provide among Fig. 2 A to 2F and show the schematic cross sectional views of manufacturing for a kind of method of an array 300 of the M * N that uses a film actuated catoptron 301 in optical projection system, wherein M * N is an integer.The same parts that should point out to appear among Fig. 2 A to 2F is to represent with identical reference number.
The technology of manufacturing array 300 is from preparing an active matrix 210 that comprises a substrate 212 of array having M * N link 214 and a M * N transistorized array (not shown), wherein respectively this link 214 is connected electrically on the transistor of a correspondence in the transistor array, and substrate 212 usefulness are made such as insulating material such as silicon wafers.
In next step, constitute thickness at the top of this active matrix 210 and be 0.1-2 μ m by such as copper (Cu) or nickel metals such as (Ni).The film that silicic acid phosphorus glass (PSG) or polysilicon are made waits to remove layer 224.If this film waits that removing layer 224 is with metal, then form this film and wait to remove layer 224 with vacuum evaporating or evaporation method, if this film is waited to remove layer 224 usefulness PSG and is made, then use chemical vapour deposition (CVD) method or revolve division, if and this film is treated to make except that layer 224 a usefulness polysilicon, then use the CVD method.
After this, in treating except that layer 224, this film forms the array (not shown) of M * N with wet or dry ecthing method to cavity.One of cavity of each centering surrounds one of link 214.
Subsequently, treat that at the film that comprises cavity using the thickness of making such as insulating material such as silicon nitrides except that one of the deposited on top of layer 224 is the elastic layer 230 of 0.1-2 μ m with the CVD method.
After this, in this elastic layer 230, constitute an array of using such as tungsten metal M * N conduits 226 such as (W).Respectively this conduit 226 is to constitute with following method: at first form an array (not shown) in M * N hole with etching method, each hole extends to the top of the link 214 of a correspondence from the top of elastic layer 230; And use such as gunite etc. and fill metal therein, as shown in Fig. 2 A.
Then, forming thickness with vacuum evaporating or vacuum vapor deposition method at the top of the elastic layer 230 that comprises conduit 226 is one second thin layer of making such as aluminium conductive materials such as (Al) 240 of using of 0.1-2 μ m.
Then forming thickness at the top of second thin layer 240 with CVD method, evaporation method, Sol-Gel method or vacuum evaporating method is that using such as lead zirconium titanate piezoelectrics such as (PZT) or such as the thin-film electro that lead magnesium niobate electrostrictive materials such as (PMN) is made of 0.1-2 μ m causes displacement layer 250.This thin-film electro of thermal treatment causes displacement layer 250 to make it to produce phase transformation then.
In next step, form the first film layer 260 of making such as aluminium (Al) or silver conductions such as (Ag) and reflectorized material of using that thickness is 0.1-2 μ m at the top that this thin-film electro causes displacement layer 250 with vacuum evaporating or vacuum vapor deposition method, as shown in Fig. 2 B.
After the above-mentioned steps, with photoetching or laser pruning method the first film layer 260, thin-film electro are caused the pattern that displacement layer 250, second thin layer 240 and elastic layer 230 are made an array of array of an array of M * N the first film electrode 265, a array that M * N thin-film electro causes displacement member 255, individual second membrane electrode 245 of M * N and M * N elastic component 235, constitute an array 310 of M * N mirror structure 311 that activates whereby, respectively the mirror structure 311 of this actuating has a top surface and side, as shown in Fig. 2 C.Respectively this second membrane electrode 245 is connected electrically on the link 214 of a correspondence by conduit 226, uses it as a signal electrode job in each film actuated catoptron 301.Each the first film electrode 265 is as a catoptron and the work of one of them bias electrode.
Because it is fully thin that each thin-film electro causes displacement member 255, when it is when making with piezoelectric, there is no need to push away support it; Because in the operating period of film actuated catoptron 301, it can be pushed away support by the electric signal that is acted on.
Step back in front covers the respectively top surface and the side of the mirror structure of actuating fully with a thinfilm protective coating 270, as shown in Fig. 2 D.
Then, use such as hydrogen fluoride etchants such as (HF) removal film and wait to remove layer 224, as shown in Fig. 2 E.
Use such as irrigations such as deionized water or methyl alcohol and rinse out the etchant that in the removal film is treated except that layer 224, uses.Then by dry or remove irrigation in a vacuum with Rotary drying.
In next step, use such as etch methods such as plasma etch methods and remove thinfilm protective coating 270.
Then, use the residue of removing the thinfilm protective coating 270 that still stays after top the elimination such as advanced learning a skill (ACT)-chemicalss such as CMI.Use such as irrigations such as deionized water or methyl alcohol and rinse out the chemicals that uses in the residue of removing thinfilm protective coating 270.Then, by dry or remove irrigation in a vacuum, constitute the array 300 of the individual film actuated catoptron 301 of M * N whereby, as shown in Fig. 2 F with the Rotary drying method.
Compare with the previously disclosed method of making the array 100 of M * N film actuated catoptron 101, in this creative method, because the elimination of irrigation is by reaching in a vacuum or with Rotary drying method dried array 300, the surface tension effect of irrigation can be reduced to minimum, and elastic component 235 still less possibility stick on the active matrix 210.
Should be understood that, though each the film actuated catoptron 301 with this creative method preparation has only a kind of single piezoelectric chip structure, but also being applied in equally primely, this creative method makes the array of film actuated catoptron that each film actuated catoptron has the structure of bimorph, in one situation of back, need only form additional electricity and cause displacement and get final product with electrode layer.
Being also pointed out that this creative method can be modified as is used to make the film actuated reflection mirror array with different geometries.
Though only described the present invention, can make other correction and modification and do not break away from scope of the present invention defined in the following claims with respect to certain preferred embodiment.
Claims (10)
1, a kind of method of making for the array of the M * N that in optical projection system, uses a film actuated catoptron, wherein M and N are integer, this method comprises the steps:
An active matrix is provided, comprises array and M * N transistorized array of a substrate, M * N link, wherein respectively this link is to be connected electrically on the transistor of a correspondence in the transistor array;
Wait to remove layer at film of deposited on top of active matrix;
Form the array of M * N to cavity in film is treated except that layer, one of cavity of each centering surrounds one of link;
Wait to remove elastic layer made from insulating material of deposited on top of layer at the film that comprises cavity;
Form an array of M * N conduit in elastic layer, respectively this conduit extends to the top of the link of a correspondence from the top of elastic layer;
One after the other cause displacement layer and a first film layer in one second thin layer of deposited on top of elastic layer, a thin-film electro, wherein this second thin layer is to make with conductive material, and this first film layer is made with conduction and reflectorized material;
Respectively the first film layer, thin-film electro are caused displacement layer, second thin layer and elastic layer and make the pattern of an array of array of an array of M * N the first film electrode, a array that M * N thin-film electro causes displacement member, individual second membrane electrode of M * N and M * N elastic component, till exposed film is waited to remove layer, constitute an array of M * N mirror structure that activates whereby, respectively the mirror structure of this actuating has a top surface and side, and comprise the first film electrode, thin-film electro causes displacement member, second membrane electrode and elastic component;
Form one and cover the top surface of each actuated mirror structure and the thinfilm protective coating of side fully;
Remove film with a kind of etchant and wait to remove layer;
Rinse out etchant with a kind of first irrigation;
Remove first irrigation; And
Remove thinfilm protective coating, constitute the array of M * N film actuated catoptron whereby.
2, the process of claim 1 wherein that waiting to remove the etchant that uses in the layer at the removal film is hydrogen fluoride (HF).
3, the process of claim 1 wherein that this thinfilm protective coating removes with plasma etch method.
4, the method for claim 1 has been removed after the thinfilm protective coating, also comprises the steps:
Remove the residue of thinfilm protective coating with a kind of chemicals;
Rinse out this chemicals with a kind of second irrigation; And
Remove second irrigation.
5, the method for claim 4, wherein this first irrigation and second irrigation are deionized water or methyl alcohol.
6, the method for claim 4, wherein this first irrigation and second irrigation are by dry removal in a vacuum.
7, the method for claim 4, wherein this first irrigation and second irrigation are removed with the Rotary drying method.
8, the method for claim 4, wherein the chemicals that uses in the residue of removing thinfilm protective coating is advanced learning a skill (ACT)-CMI.
9。The process of claim 1 wherein that respectively this film actuated catoptron has a kind of bimorph structure.
10, the method for claim 1 also is included in the deposit electricity and causes after the displacement layer, forms supplemantary electrode and electricity in succession and causes the displacement layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 96102420 CN1153311A (en) | 1995-04-21 | 1996-02-17 | Method for forming array of thin film actuated mirrors |
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR9390/1995 | 1995-04-21 | ||
| KR9395/1995 | 1995-04-21 | ||
| KR10581/1995 | 1995-04-29 | ||
| KR10582/1995 | 1995-04-29 | ||
| KR18673/1995 | 1995-06-30 | ||
| CN 96102420 CN1153311A (en) | 1995-04-21 | 1996-02-17 | Method for forming array of thin film actuated mirrors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1153311A true CN1153311A (en) | 1997-07-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 96102420 Pending CN1153311A (en) | 1995-04-21 | 1996-02-17 | Method for forming array of thin film actuated mirrors |
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| CN (1) | CN1153311A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006007757A1 (en) * | 2004-07-16 | 2006-01-26 | Quanta Display Inc. | A low temperature poly-silicon thin film transistor |
| US10439187B2 (en) | 2012-11-27 | 2019-10-08 | Apple Inc. | Laminar battery system |
| US10930915B2 (en) | 2014-09-02 | 2021-02-23 | Apple Inc. | Coupling tolerance accommodating contacts or leads for batteries |
| US11508984B2 (en) | 2013-03-15 | 2022-11-22 | Apple Inc. | Thin film pattern layer battery systems |
-
1996
- 1996-02-17 CN CN 96102420 patent/CN1153311A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006007757A1 (en) * | 2004-07-16 | 2006-01-26 | Quanta Display Inc. | A low temperature poly-silicon thin film transistor |
| US10439187B2 (en) | 2012-11-27 | 2019-10-08 | Apple Inc. | Laminar battery system |
| US11508984B2 (en) | 2013-03-15 | 2022-11-22 | Apple Inc. | Thin film pattern layer battery systems |
| US10930915B2 (en) | 2014-09-02 | 2021-02-23 | Apple Inc. | Coupling tolerance accommodating contacts or leads for batteries |
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