CN1047903C

CN1047903C - Thin film actuated mirror array for use in an optical projection system and method for the manufacture thereof

Info

Publication number: CN1047903C
Application number: CN94194092A
Authority: CN
Inventors: 池政范; 金东局; 闵雇基
Original assignee: Daewoo Electronics Co Ltd
Current assignee: WiniaDaewoo Co Ltd
Priority date: 1993-11-09
Filing date: 1994-11-01
Publication date: 1999-12-29
Anticipated expiration: 2014-11-01
Also published as: JP3165444B2; JPH09504888A; ITMI942257A0; CZ290728B6; HUT75802A; CZ132996A3; HU9601095D0; AU8117194A; HU220517B1; PL314228A1; DE69420669D1; PL176490B1; BR9408009A; US5760947A; TW279931B; IT1271708B; EP0652455B1; AU693125B2; CN1134772A; CA2176111A1

Abstract

An array of M x N thin film actuated mirrors for use in an optical projection system comprises an active matrix (52), an array of M x N thin film actuating structures (54), each of the thin film actuating structures including at least a thin film layer (67) of a motion-inducing material, a pair of electrodes (70, 71), each of the electrodes being provied on top (68) and bottom (69) of the thin film motion-inducing layer (67), an array of M x N supporting members (56), each of the supporting members being used for holding each of the actuating structures (54), in place by cantilevering each of the actuating structures and also for electrically connecting each of the actuating structures and the active matrix, an array of M x N spacer members (58), each of the spacer members being mounted on the top surface of each of the actuating structures (54) at the distal end thereof, and an array of M x N mirror layers for reflecting light beams, each of the mirror layers being secured on each of the spacer members of the actuating structures. An electrical signal is applied across the thinfilm layer (67) of the motion-inducing material located between the pair of electrodes (70, 71) in each of the actuating structures, causing a deformation thereof, which will in turn tilt the mirror layer (60) secured on the spacer member thereof.

Description

The array of thin film actuated mirrors and the manufacture method thereof that are used for an optical projection system

The present invention relates to a kind of optical projection system; And more specifically, relate to a kind of M * N array of thin film actuated mirrors and manufacture method thereof that is used for this system.

In the various video display systems of prior art, known a kind of optical projection system can provide significantly high-quality display.In such optical projection system, for example be radiated at equably on one M * N actuated mirror array so that each speculum and each actuator are coupled from the light of a lamp.These actuators can put on its electric field and the electricity that is out of shape causes the displacement material makes by response, for example are piezoelectric or electrostriction material.

Folded light beam from each speculum is incident on the aperture of a reflector.By each actuator is applied a signal of telecommunication, the relative position of each speculum and incident beam is changed, must and cause light path generation deviation from the folded light beam of each speculum.When the optical path change of each folded light beam, be changed from the light quantity of passing through this aperture of each mirror reflects, thus the intensity of modulated beam of light.Through suitable Optical devices, for example a projecting lens is sent on the projection screen, thereby shows an image thereon by the modulated light beam in this aperture.

In Fig. 1, be shown with the one M * N electricity that is used for an optical projection system and cause the cross sectional view of displacement actuated mirror array 10, this array is disclosed in and is entitled as " electricity causes the displacement actuated mirror array ", United States serial is that it includes in the patent application of one total unsettled and application simultaneously: by a substrate 12 and on the active matrix 11 that M * the N transistor array is formed; M * N electricity causes the array 13 of displacement actuator 30, and each electricity causes displacement actuator 30 and comprises a pair of actuation element 14,15, a pair of bias electrode 16,17, and a common signal electrode 18; The array 19 of M * N hinge 31, each hinge 31 is installed in each electricity and causes in the displacement actuator 30; The array 20 of M * N link 22, each link 22 are used for signal electrode 18 is electrically connected with active matrix 11; And the array 21 of M * N speculum 23, each speculum 23 is installed on the top of each M * N hinge 31.

Above-described total unsettled in the application, also disclose and a kind ofly make such one to adopt thickness be that the M * N electricity of 30 to 50um potsherds causes the method for displacement actuated mirror array.

Yet the method that above-mentioned manufacturing M * N electricity is caused the displacement actuator array still leaves some room for improvement.At first, acquisition thickness is that 30 to 50um potsherd is quite difficult; Moreover even the thickness of potsherd is reduced to 30 to 50um scope, its mechanical performance most likely reduces, and this makes its manufacture process be difficult to realize again.

And, said method relate to elapsed time many, be difficult to control, and processing procedure is tediously long, thereby makes and be difficult to obtain desired reproducibility, reliability and output; And and then, may make it reduce size and be restricted.

Therefore, main purpose of the present invention provides a kind of manufacture method that the use thin-film electro causes the M * N actuated mirror array of displacement potsherd of exempting.

Another object of the present invention provides a kind of known thin film technique manufacturing of adopting usually by use and has higher reproducibility in making semiconductor, the improvement of the M of reliability and output * N actuated mirror array and novel method.

A further object of the present invention provides a kind of M * N actuated mirror array that comprises the new construction of a plurality of thin layers of being made by motional induction, conduction and reflectorized material that has.

According to an aspect of the present invention, provide a kind of M * N array of thin film actuated mirrors that is used for optical projection system, this array includes: by the active matrix that a substrate, one M * N transistor array and one M * N link array is formed; The array of one M * N diaphragm-operating mechanism, each actuating mechanism has a top surface and a basal surface, one near-end and a far-end, each actuating mechanism comprises at least onely to be made by the motional induction material, thin layer with a top surface and a basal surface, with first and second electrode, top surface and this second electrode that this first electrode is positioned at the motional induction layer are positioned at its basal surface, wherein the signal of telecommunication that applies on the motional induction layer between first and second electrode deforms this motional induction layer, and therefore actuating mechanism is deformed; The array of one M * N supporting element, each supporting element have a top surface and a basal surface, and wherein each supporting element is used for each actuating mechanism fix in position, and each actuating mechanism is electrically connected with active matrix; The array of one M * N spacer element, each spacer element have a top surface and a basal surface, and are positioned on the top surface of each actuating mechanism far-end; And the array of one M * N mirror layer, each mirror layer comprises the speculum and a supporting layer of a folded light beam, each mirror layer also comprises first and second part corresponding to each actuating mechanism far-end and near-end, first and second partial fixing of each mirror layer is on the top surface of each spacer element, and stretch out cantilever from corresponding supporting element respectively, so that when each actuating mechanism response signal of telecommunication deforms, corresponding mirror layer still remains flat, thereby allows to make whole mirror reflects light beams.

According to a further aspect in the invention, provide the new method of a kind of M that uses known thin film technique manufacturing to be used for optical projection system * N actuated mirror array, this method includes following steps: an active matrix with a top surface and a basal surface (a) is provided, this active matrix comprises a substrate, one M * N transistor array and one M * N link array; (b) form first supporting layer on the top surface of active matrix, this first supporting layer comprises that one waits to remove the district corresponding to the M * N pedestal array and first of M in M * N array of thin film actuated mirrors * N supporting element array; (c) handle first of first supporting layer and wait to remove the district so that can be removed; (d) deposition the first film electrode layer on first supporting layer; (e) on the first film electrode layer, provide a film movement inductive layer; (f) on this film movement inductive layer, form second mea layers; (g) provide a spacer layer on this second mea layers, this spacer layer comprises that one M * N spacer element array and second waits to remove the district; (h) handle second of this spacer layer and wait to remove the district so that can be removed; (i) deposition second supporting layer on the top of this spacer layer; (j) on the top of this supporting layer, form a reflector layer; And (k) remove first supporting layer and spacer layer first and second wait to remove the district, thereby form described M * N array of thin film actuated mirrors.

From the description of the preferred embodiment that provides below in conjunction with accompanying drawing, above-mentioned and other purpose of the present invention and feature will become very clear, in the accompanying drawing:

Fig. 1 shows previous disclosed M * N electricity and causes the cross sectional view of displacement actuated mirror array;

Fig. 2 shows the cross sectional view of M * N array of thin film actuated mirrors according to a first advantageous embodiment of the invention;

Fig. 3 shows the detail section view of the array of thin film actuated mirrors of the first embodiment of the invention shown in Fig. 2;

Fig. 4 shows the cross sectional view of the thin-film actuated reflection mirror that is positioned at the elastic layer on second electrode bottom having of first embodiment;

Fig. 5 shows the cross sectional view of the thin-film actuated reflection mirror with supporting layer of being made by reflectorized material of first embodiment;

Fig. 6 A and 6B show the cross sectional view of the thin-film actuated reflection mirror of first embodiment of any in top surface with the motional induction layer in each actuating mechanism that is partly covered by first and second electrode or the basal surface;

Fig. 7 shows the cross sectional view of the thin-film actuated reflection mirror of first embodiment in the actuating state;

Fig. 8 shows the cross sectional view of the thin-film actuated reflection mirror of second embodiment with bimorph structure;

Fig. 9 shows the cross sectional view of the thin-film actuated reflection mirror of the 3rd embodiment; And

Figure 10 A to 10H has reproduced the summary cross sectional view according to the manufacturing step of the first embodiment of the present invention.

Referring now to Fig. 2 to 10, provide the M * N array of thin film actuated mirrors of an optical projection system and the summary cross sectional view of manufacture method thereof of being used for of the present invention according to a preferred embodiment of the invention, wherein M and N are integer.The same section that should be pointed out that appearance among Fig. 2 to 10 is represented with identical reference number.

In Fig. 2, be shown with the cross sectional view of M * N array of thin film actuated mirrors 50 of first embodiment, this array 50 includes an active matrix 52, the array 53 of one M * N diaphragm-operating mechanism 54, the array 59 of the array 57 of array 55, one M of one M * N supporting element 56 * N spacer element 58 and one M * N mirror layer 60.

Fig. 3 shows the detail section view of the array of thin film actuated mirrors 50 shown in Fig. 2.This active matrix 52 comprises the array 61 of a substrate 59, one M * N transistor array (not shown) and one M * N link 62.Each actuating mechanism 54 has a top surface and a

basal surface

63,64, a near-end and a far-

end

65,66, and also comprise and at least onely making by the motional induction material, has the thin layer 67 of a top surface and a

basal surface

68,69 and by metal, for example gold (Au) or first and second electrode 70.71 of making of silver (Ag), this first electrode 70 has a top surface 72.First electrode 70 is positioned on the top surface of motional induction thin layer 67 and second electrode 71 is positioned on its basal surface.This motional induction thin layer 67 is by piezoelectric ceramic, electrostrictive ceramic, and magnetostriction pottery or piezopolymer are made.Under situation about being made by piezoelectric ceramic or piezopolymer when motional induction thin layer 67, it must be polarized.

Each M * N supporting element 56 with a top surface and a

basal surface

73,74 is used for each actuating mechanism 54 fix in position and by providing one by electric conducting material, and for example metal conductor 118 is electrically connected second electrode 71 in each actuating mechanism 54 with corresponding link 62 on the active matrix 52.In the array 50 of M of the present invention * N thin-film actuated reflection mirror 51, be positioned on the top surface of each supporting element 56 by the basal surface 64 that each actuating mechanism 54 is installed the near-end 65 that makes each actuating mechanism 54, each actuating mechanism 54 stretches out cantilever from each supporting element 56, and the basal surface 74 of each supporting element 56 is positioned on the top of active matrix 52.Each spacer element 58 with a top surface and a

basal surface

75,76 is positioned on the top surface 63 of each actuating mechanism 54 far-end 66.And, each mirror layer 60 comprises the speculum 77 of a folded light beam, first and

second part

79,80 with the supporting layer 78 of a top surface 81, the far-end that corresponds respectively to each actuating mechanism 54 and near-

end

66,65, wherein the first 79 of each mirror layer 60 is fixed on the top surface 75 of each spacer element 58 and second portion 80 stretches out cantilever from each supporting element 56.In each mirror layer 60, speculum 77 is positioned on the top surface 81 of supporting layer 78.

Apply an electric field on the motional induction thin layer 67 between first and

second electrode

70,71 in each actuating mechanism 54.The such electric field that applies will make motional induction layer 67 deform, thereby actuating mechanism 54 is deformed, and then make mirror layer 60 produce distortion.

And each thin-film actuated reflection mirror 51 also can provide posterior limiting 88, and this elastic layer 88 can or be positioned between the spacer element 58 in each actuated mirror 51 and first electrode 70 at the end of second electrode 71.Be shown with one among Fig. 4 and have the thin-film actuated reflection mirror 51 of elastic layer 88 on the basal surface 64 of actuating mechanism 54.

The supporting layer 78 used materials of manufacturing in each mirror layer 60 also can be for example to be the reflectorized material of aluminium (Al), also play effect as speculum 77 in each thin-film actuated reflection mirror 51 to allow its top surface 81, as shown in Figure 5.

Maybe when the top surface of the motional induction thin layer 67 in having each actuating mechanism 54 that is covered by first and

second electrode

70,71 parts and

basal surface

68,69, may make the array 50 of thin-film actuated reflection mirror 51 of the present invention work the same well when the top surface of the motional induction thin layer 67 in having each actuating mechanism 54 that is covered fully by first and

second electrode

70,71 and basal surface 68,69.Thin-film actuated reflection mirror 51 in this case must be provided with posterior limiting 88.Two examples of the thin-film actuated reflection mirror 51 with such structure have been shown among Fig. 6 A and the 6B.

As the example of first embodiment, Fig. 3 and 7 is shown with the array 50 of one M * N thin-film actuated reflection mirror 51, and this array 50 includes one by piezoelectric ceramic, for example the array of M * N actuating mechanism 54 of making of plumbous zirconate titanate (PZT).On the motional induction film piezo-electric layer 67 that is arranged between first and

second electrode

70,71 of each actuating mechanism 54, apply an electric field.The electric field that applies according to the polarity with respect to this electric field of piezoelectric polarity will make piezoelectric ceramic shrink or expansion.If the polarity of this electric field is corresponding to the polarity of piezoelectric ceramic, this piezoelectric ceramic will shrink.If the polarity of this electric field is opposite with the polarity of piezoelectric ceramic, this piezoelectric ceramic will be expanded.

Among Fig. 7, the polarity of piezoelectric ceramic makes piezoelectric ceramic produce and shrinks corresponding to the polarity that applies electric field.In this case, actuating mechanism 54 is bent downwardly, and as shown in Figure 7, thereby makes mirror layer 60 angle that is upturned.Yet mirror layer 60 still remains flat, and result, the effective length of mirror layer 60 are the whole length of mirror layer 60.Compare down, if mirror layer 60 directly is fixed on the actuating mechanism 54, this part that is fixed on the mirror layer 60 on the supporting element 56 does not produce reaction to electric field and is out of shape, but still fixedly remains on original position.Like this, the effective length of mirror layer 60 has equaled to reduce to be fixed on the length of this partial-length of the actuator phase 54 on the supporting element 56.Therefore, adopt spacer element 58 and mirror layer 60 in the embodiment shown in fig. 3.The duty factor and the efficient of mirror layer have been improved.Referring now to Fig. 3 and 7, the light that is radiated at as can be seen on the mirror layer 60 of actuated mirror shown in Figure 7 51 is deflected on the angle greater than the light of not driven actuated mirror shown in Figure 3 51 reflections.

On the other hand, the electric field of an opposite polarity can be applied on the motional induction film piezo-electric layer 67, make piezoelectric ceramic expand.In this example, actuating mechanism 54 is bent upwards (end illustrates).Be radiated at by the light on the mirror layer 60 of driven mirror 51 upwards and on angle, be deflected less than the light of not driven actuated mirror 51 deflections shown in Figure 3.

Fig. 8 is shown with the cross sectional view of array 100 of one M * N thin-film actuated reflection mirror 101 of second embodiment, be the bimorph structure wherein except that each actuating mechanism 54, this second embodiment and first embodiment are similar, the actuating mechanism 54 of this bimorph structure comprises one first electrode 70, one second electrode 71,87, one of one intermediate metal layers have last motional induction thin layer 89 and following motional induction thin layer 92 with a top surface and a basal surface 93,94 of a top surface and a basal surface 90,91.In each actuating mechanism 54, motional induction thin layer 89,92 was by intermediate metal layer 87 under should upward reaching, be positioned at first electrode 70 on the top surface of motional induction thin layer 89, and second electrode 71 that is positioned on the basal surface 94 of motional induction thin layer 92 down separates.As in the situation of first embodiment, motional induction film 89,92 was by piezoelectric ceramic, electrostrictive ceramic under going up in each actuating mechanism 54 reached, and magnetostriction pottery or piezopolymer are made.Under situation last and that motional induction thin layer 89,92 is made by piezoelectric ceramic or piezopolymer down, upward and down motional induction thin layer 89,92 must be polarized in such a way: the polarised direction that goes up the piezoelectric in the motional induction thin layer 89 is opposite with the polarised direction of following motional induction thin layer 92.

As the example how one second embodiment works, suppose in the array 100 of M shown in Figure 8 * N thin-film actuated reflection mirror 101 go up and down motional induction layer 89,90 make by the piezoelectric ceramic of for example PZT.When an electric field being applied on each actuating mechanism 54, the last and following motional induction film piezo-electric layer 89,92 of actuating mechanism 54 will be bent upwards or be bent downwardly according to the polarity of piezoelectric ceramic and the polarity of electric field.For example, if the polarity of piezoelectric ceramic and electric field is shunk motional induction film piezo-electric layer 89, and motional induction film piezo-electric layer 92 expansion down, actuating mechanism 54 will be bent upwards.In this case, incident ray is deflected from actuating mechanism 54, and its place angle is less than the angle from the light of not driven actuating mechanism 54 deflections.Yet if the polarity of piezoelectric ceramic and electric field makes 89 expansion of motional induction film piezo-electric layer, and motional induction film piezo-electric layer 92 shrinks down, and actuating mechanism 54 will be bent downwardly.In this case, incident ray is deflected from actuating mechanism 54, and its place angle is greater than the angle of the light of driven actuating mechanism 54 deflections from the beginning.

Fig. 9 is shown with the cross sectional view of array 200 of one M * N thin-film actuated reflection mirror 201 of the 3rd embodiment, and wherein the 3rd embodiment and first embodiment are similar, and different is the array 57 that does not have M * N spacer element.What replaced is that the supporting layer 78 of each thin-film actuated reflection mirror 51 links to each other with the far-end 66 and the active matrix 52 of actuating mechanism 54 simultaneously.

Figure 10 A to 10I has illustrated the manufacturing step that is comprised in the manufacturing of the first embodiment of the present invention.Make first embodiment, the processing procedure of array 50 (wherein M * N is an integer) that is M * N thin-film actuated reflection mirror 51 is from preparing to have the active matrix 52 of a top surface and a basal surface 102.103, this active matrix 52 comprises a substrate 59, the array 104 of M * N transistor array (illustrating) and M * N link 105 is shown in Figure 10 A.

In the step of following, on the top surface 102 of active matrix 52, form one first supporting layer 106, it comprises that one waits to remove district 109 corresponding to the array 107 and one first of the M * N pedestal 108 of the array 55 of M * N supporting element 56, and wherein this first supporting layer 106 forms by following steps: deposition one waits to remove a layer (not shown) on the whole top surface 102 of active matrix 52; Form one M * N dead slot array (end illustrates), wait to remove district 109 thereby generate first, each dead slot be positioned at each M * N link 62 around; And in each dead slot, insert a pedestal 108, shown in Figure 10 B.This is waited to remove layer and forms by using sputtering method, and the dead slot array forms by using etching method, and pedestal uses etching method to form by using sputtering method or chemical vapor deposition (CVD) method subsequently.Then first supporting layer 106 waited that removing district 109 handles to make and use etching method afterwards or apply chemical agent and can be removed.

Shown in Figure 10 C, by at first using etching method to form a hole that extends to the top of corresponding link 62 from the top of each pedestal 108, insert electric conducting material subsequently in the hole, for example tungsten (W) is made the conductor 118 that each link 62 is electrically connected with each second electrode 71.

In the step of following, shown in Figure 10 D, on first supporting layer 106 deposition by electric conducting material, the first film electrode layer 111 made of Au for example.Then, on the first film electrode layer 111, form respectively, for example a film movement inductive layer 112 and one second mea layers 113 made of PZT by the motional induction material.

Then, provide a spacer layer 114 on the top of second mea layers 113, this spacer layer 114 comprises that the array 57 and one second of M * N spacer element 58 waits to remove district 115.Shown in Figure 10 E.It is similar to formation first supporting layer 106 employed methods to form spacer layer 114 employed methods.Handle second of spacer layer 114 then and wait to remove district 115 so that can be removed.

In the step then, sequence ground deposits second supporting layer 116 and comprises the reflector layer 117 of mirror layer 60 on the top of spacer layer 114, shown in Figure 10 F.

Can adopt known thin film technique, for example sputter, deposition such as sol-gel, evaporation, etching and micromachined also is configured to conduction, motional induction, and the thin layer of reflectorized material, shown in Figure 10 G.

Then the method by chemistry remove or eliminate supporting layer 106 and spacer layer 114 first and second wait to remove district 109,115, thereby form the array 50 of described M * N thin-film actuated reflection mirror 51, shown in Figure 10 H.

Second embodiment is manufactured in the mode similar to first embodiment.First supporting layer is applied on the active matrix, and this first supporting layer also includes corresponding to the M * N pedestal array of M * N supporting element array and waits to remove the district.On this first supporting layer, deposit the first film electrode layer, following film movement inductive layer, intermediate metal layer, upper film motional induction layer then respectively, and second mea layers.In the step of following, series terrain becomes spacer layer and mirror layer.Adopt previous described known thin film technique deposition and be configured to conduction, motional induction and reflectorized material thin layer.Then by the method for chemistry eliminate or remove first supporting layer and spacer layer waiting remove the district, stay the array 100 of thin-film actuated reflection mirror 101 of the array 53 of M * N actuating mechanism 54 with bimorph structure.

In the method for first and second embodiment of manufacturing of the invention described above, can add an additional treatments that forms elastic layer 88, it comprises a kind of and the similar processing of other thin layer of formation.

Though only described the present invention for preferred embodiment, person skilled in the art person can make various remodeling and variation, and does not break away from the defined scope of the invention of following claims.

Claims

1, a kind of M * N array of thin film actuated mirrors that is used for an optical projection system, wherein M * N is an integer, this array comprises:

One active matrix comprises a substrate, one M * N transistor array and one M * N link array;

One M * N diaphragm-operating mechanism array, each actuating mechanism has a top surface and a basal surface, a near-end and a far-end, each actuating mechanism comprises a thin layer of the motional induction material with a top surface and a basal surface at least, and first electrode and second electrode, first electrode is positioned on the top surface of motional induction layer and second electrode is positioned on the basal surface of this motional induction layer, wherein the signal of telecommunication that applies on the motional induction layer between first and second electrode makes this motional induction layer deform, thereby and actuating mechanism is deformed;

One M * N supporting element array, each supporting element has a top surface and a basal surface, and wherein each supporting element is used for being electrically connected with active matrix with each actuating mechanism fix in position and with each actuating mechanism;

One M * N partition array, each partition has a top surface and a basal surface, and is positioned on the top surface of each actuating mechanism far-end; And

One M * N mirror layer array, each mirror layer comprises the speculum and a supporting layer of a folded light beam, each mirror layer also comprises first and the second portion corresponding to each actuating mechanism far-end and near-end, this first and second portion are fixed on the top surface of each spacer element and stretch out cantilever from corresponding supporting element respectively, so that when each actuating mechanism deforms in response to the signal of telecommunication, corresponding mirror layer remains flat, thereby allows its whole mirror reflects light beam.

2, actuated mirror array according to claim 1 wherein is positioned on the top surface of each supporting element by the basal surface of each actuating mechanism being installed each actuating mechanism that makes near-end, and each actuating mechanism stretches out cantilever from each supporting element.

3, actuated mirror array according to claim 1, wherein the basal surface of each supporting element is positioned on the top of active matrix.

4, actuated mirror array according to claim 1, wherein each spacer element is positioned on the top surface of each actuating mechanism far-end.

5, according to claim 1 fast actuated mirror array, wherein the first of each mirror layer is fixed on the top surface of each spacer element, and second portion stretches out cantilever from corresponding supporting element.

6, actuated mirror array according to claim 1, wherein each actuating mechanism is a bimorph structure and comprises one first electrode, one second electrode, one intermediate metal layer, the one last motional induction thin layer and with a top surface and a basal surface has the following motional induction thin layer of a top surface and a basal surface, wherein should go up and down the motional induction thin layer separated by intermediate metal layer, first electrode is positioned on the top surface of motional induction thin layer and second electrode be positioned under on the basal surface of motional induction thin layer.

7, actuated mirror array according to claim 1, wherein the motional induction thin layer is made by piezoelectric ceramic or piezopolymer.

8, actuated mirror array according to claim 7, wherein the motional induction thin layer is polarized.

9, actuated mirror array according to claim 1, wherein the motional induction thin layer is made by electrostriction material.

10, actuated mirror array according to claim 1, wherein the motional induction thin layer is made by magnetostrictive material.

11, row fall in actuated mirror according to claim 6, and the motional induction thin layer is made by piezoelectric under wherein upward reaching.

12, actuated mirror array according to claim 11, the piezoelectric of wherein going up the motional induction thin layer is polarized with the polarised direction opposite with following motional induction thin layer.

13, actuated mirror array according to claim 1, wherein each supporting element is provided with a conductor that is used for making second electrode of each actuating mechanism to be electrically connected with link on the corresponding active matrix.

14, actuated mirror array according to claim 1, wherein first and second electrode have covered the top surface and the basal surface of motional induction thin layer respectively fully.

15, actuated mirror array according to claim 1, wherein first or second electrode partly cover the top surface or the basal surface of motional induction thin layer.

16, actuated mirror array according to claim 1, wherein first and second electrode are made by electric conducting material.

17, actuated mirror array according to claim 1 also includes M * N elastic layer, and each elastic layer is positioned on the top surface or basal surface of each actuating mechanism.

18, actuated mirror array according to claim 1, wherein supporting layer is made by reflectorized material, thereby makes supporting layer play effect as speculum in each thin-film actuated reflection mirror again.

19, actuated mirror array according to claim 1 does not wherein have M * N spacer element array.

20, actuated mirror array according to claim 19, wherein each supporting layer links to each other with the far-end of each actuating mechanism and the top surface of active matrix simultaneously.

21, a kind of optical projection system comprises the M * N array of thin film actuated mirrors with each described structure in the claim 1 to 20.

22, a kind of manufacturing is used for the method for the M * N array of thin film actuated mirrors of an optical projection system, and wherein M and N are integer, and this method may further comprise the steps:

(a) provide the active matrix with a top surface and a basal surface, this active matrix comprises a substrate, one M * N transistor array and one M * N link array;

(b) form first supporting layer on the top surface of active matrix, this first supporting layer comprises corresponding to the M * N pedestal array and first of M in M * N array of thin film actuated mirrors * N supporting element array waits to remove the district;

(c) handle first of first supporting layer and wait to remove the district so that can be removed;

(d) deposition the first film electrode layer on first supporting layer;

(e) on the first film electrode layer, provide a film movement inductive layer;

(f) on this film movement inductive layer, form second mea layers;

(g) provide a spacer layer on second mea layers, this spacer layer comprises that one M * N spacer element array and one second waits to remove the district;

(h) handle second of spacer layer and wait to remove the district so that can be removed;

(i) deposition second supporting layer on spacer layer;

(j) on the top of this supporting layer, form a reflector layer; And

(k) first and second of removal first supporting layer and spacer layer waited to remove the district, thereby forms described M * N array of thin film actuated mirrors.

23, method according to claim 22 wherein uses sputtering method to form first and second mea layers.

24, method according to claim 22 wherein uses sputtering method to form the film movement inductive layer.

25, method according to claim 22 wherein uses chemical vapor deposition method to form the film movement inductive layer.

26, method according to claim 22 wherein uses sol-gel method to form the film movement inductive layer.

27, method according to claim 22 wherein uses sputtering method to form mirror layer.

28, method according to claim 22, wherein first supporting layer forms by following steps:

(a) deposition first waits to remove layer on the top surface of active matrix;

(b) wait to remove on the layer at this one M * N dead slot array be provided, each first dead slot be positioned at each M * N link around; And

(c) in each first dead slot, form a pedestal.

29,, wherein use sputtering method to form first and wait to remove layer according to claim 28 described methods.

30, method according to claim 28 wherein uses etching method to form the one M * N dead slot array.

31, method according to claim 28 is wherein used sputtering method, uses etching method to form pedestal subsequently.

32, method according to claim 28 is wherein used chemical vapor deposition method, uses etching method to form pedestal subsequently.

33, method according to claim 22 wherein forms spacer layer by following steps:

(a) deposition second waits to remove layer on second mea layers;

(b) wait to remove on the layer second the 2nd M * N dead slot array is provided; And

(c) in each dead slot, form spacer element.

34, method according to claim 33 is wherein used sputtering method to form second and is waited to remove layer.

35, method according to claim 33 wherein uses etching method to form the 2nd M * N dead slot array.

36, method according to claim 33 is wherein used sputtering method, uses etching method to form spacer element subsequently.

37, method according to claim 33 is wherein used chemical vapor deposition method, uses etching method to form spacer element subsequently.

38, a kind of optical projection system comprises M * N array of thin film actuated mirrors of making according to each described method in the claim 22 to 37.

39, a kind of manufacturing is used for the method for the M * N array of thin film actuated mirrors of an optical projection system, and wherein M and N are integer, and this method includes following steps:

(b) form a supporting layer on the top surface of active matrix, this supporting layer comprises that one waits to remove the district corresponding to the M * N pedestal array and of the M in M * N array of thin film actuated mirrors * N supporting element array;

That (c) handles this supporting layer waits that removing Qu Yike is removed;

(d) deposition the first film electrode layer on this supporting layer;

(e) on the first film electrode layer, provide film movement inductive layer;

(f) on the top of following film movement inductive layer, form an intermediate metal layer;

(g) deposition one upper film motional induction layer on intermediate metal layer;

(h) on upper film motional induction layer, provide second mea layers, thereby form a bimorph structure;

(i) provide a spacer layer on the top of second mea layers, this spacer layer comprises that one M * N spacer element array and one second waits to remove the district;

(j) handle second of this spacer layer and wait to remove the district so that can be removed;

(k) deposition second supporting layer on the top of spacer layer;

(l) on the top of this supporting layer, form a reflector layer; And

(m) first and second of removal first supporting layer and spacer layer waited to remove the district, thereby forms described M * N array of thin film actuated mirrors.

40, a kind of optical projection system includes M * N actuated mirror array of making according to the described method of claim 39.