CN115327679A - Plastic laser radar outer cover optical anti-reflection film and preparation method thereof - Google Patents
Plastic laser radar outer cover optical anti-reflection film and preparation method thereof Download PDFInfo
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Abstract
The invention relates to an optical anti-reflection film of a plastic laser radar outer cover and a preparation method thereof, wherein an optical anti-reflection film body is provided with eight film layers, wherein the film layers comprise a silicon dioxide film layer, a zirconium dioxide film layer, an aluminum oxide film layer, an anti-fingerprint AF film layer, a silicon dioxide film layer, a zirconium dioxide film layer, an aluminum oxide film layer and an anti-fingerprint AF film layer, and the optical anti-reflection film body can realize the optical anti-reflection film which can reduce reflected light and improve surface hardness.
Description
Technical Field
The invention relates to the technical field of optical films, in particular to an optical antireflection film of a plastic laser radar outer cover and a preparation method thereof.
Background
The laser radar determines the distance by measuring the time difference and the phase difference of laser signals, and draws a 3D image with a clear target by utilizing a Doppler imaging technology. The laser radar analyzes the turn-back time of the laser after encountering a target object by emitting and receiving laser beams, calculates the relative distance to the target object, obtains a three-dimensional model and related data of the target object by utilizing information such as three-dimensional coordinates, reflectivity, texture and the like of a large number of dense points on the surface of the target object collected in the process, establishes a three-dimensional point cloud picture, and draws an environment map so as to achieve the purpose of environment perception. The laser radar dustcoat is as laser radar system's window, and the transmission of laser all need pass through the dustcoat with receiving, therefore the dustcoat both had played the effect of protection laser radar internal system and had also played the non-light tight effect. The existing laser radar outer cover adopts a special plastic base material which can not transmit visible light (380-700 nm) but can transmit infrared rays (700-1600 nm) with a specific wave band, wherein the special plastic base material is usually a modified raw material of Polycarbonate (PC) or polymethyl methacrylate (PMMA). The residual reflectivity of the surface of the plastic laser radar outer cover is about 4% -5%, and excessive reflected light can affect the detection precision and detection distance of the laser radar, so that an antireflection film is generally plated on the surface of the laser radar outer cover. Meanwhile, the plastic substrate generally has the defects of low surface hardness, easy scratching and the like. Especially, the laser radar outer cover is applied to the complex and changeable environment such as a vehicle, and the service life of the outer cover is directly influenced by the scratch resistance of the laser radar outer cover.
Disclosure of Invention
The invention aims to provide an optical antireflection film of a plastic laser radar housing and a preparation method thereof, the optical antireflection film can meet the optical performance requirement of the housing, can reduce reflected light and improve surface hardness, and can improve the scratch resistance of the laser radar housing, and the optical antireflection film prepared by the preparation method can improve the film adhesion and compactness while maintaining good stability.
In order to achieve the purpose, the invention provides the following technical scheme: an optical antireflection film of a plastic laser radar outer cover is characterized in that: the optical anti-reflection film comprises an optical anti-reflection film body plated on a laser radar outer cover, wherein the optical anti-reflection film body is provided with eight film layers, the eight film layers comprise a silicon dioxide film layer, a zirconium dioxide film layer, an aluminum oxide film layer and an anti-fingerprint AF film layer, and the silicon dioxide film layer, the zirconium dioxide film layer, the aluminum oxide film layer and the anti-fingerprint AF film layer form the optical anti-reflection film body.
Further, the eight film layers comprise four silicon dioxide film layers, two zirconium dioxide film layers, one aluminum oxide film layer and one anti-fingerprint AF film layer.
Furthermore, the refractive index of the zirconium dioxide film layer is 1.95-2.05, the refractive index of the silicon dioxide film layer is 1.43-1.47, the refractive index of the aluminum sesquioxide film layer is 1.65-1.69, and the refractive index of the anti-fingerprint AF film layer is 1.48-1.5.
Further, eight rete from laser radar dustcoats from nearly to far setting gradually first layer, second floor, third layer, fourth layer, fifth layer, sixth layer, seventh layer, eighth layer, the first layer does the silica dioxide rete, the second floor does the zirconia rete, the third layer does the silica dioxide rete, the fourth layer does the zirconia rete, the fifth layer does the silica dioxide rete, the sixth layer does two aluminium oxide retes, the seventh layer does the silica dioxide rete, the eighth layer does prevent fingerprint AF rete.
Further, the thickness of the first layer is 188.69-188.89nm, the thickness of the second layer is 28.63-28.83nm, the thickness of the third layer is 34.53-34.73nm, the thickness of the fourth layer is 44.91-45.11nm, the thickness of the fifth layer is 49.63-49.83nm, the thickness of the sixth layer is 29.90-30.10nm, the thickness of the seventh layer is 59.37-59.57nm, and the thickness of the eighth layer is 29.90-30.10nm.
A method for preparing the optical antireflection film for the plastic laser radar housing according to claim 1, wherein the method comprises the following steps:
(1) And (4) cleaning the plastic laser radar outer cover by using an ultrasonic cleaning machine, and then baking.
(2) Putting the plastic laser radar outer cover baked in the step (1) into a vacuum electron beam evaporation coating machine, setting the vacuum degree of the vacuum electron beam evaporation coating machine to be 3 x 10 < -3 > Pa, setting the ambient heating temperature of a coating vacuum chamber to be 50 ℃, starting an ion source, and sequentially depositing a first film to a seventh film on the surface of the plastic laser radar outer cover baked:
A. plating a first film layer:
keeping an electron gun wire of a vacuum electron beam evaporator in a heating and vacuum state, forming a fine beam by electron flow and bombarding the surface of a silicon dioxide film material to change the silicon dioxide film material into a molecular state to be evaporated and attached to the surface of a plastic laser radar outer cover, wherein the deposition rate is 8 angstroms/second, and the thickness of a first film of the silicon dioxide film is 188.69-188.89nm;
B. plating a second film layer:
keeping an electron gun wire of a vacuum electron beam evaporator in a heating and vacuum state, forming a thin beam by electron current and bombarding the surface of a zirconium dioxide film layer material to change the zirconium dioxide film layer material into a first film layer which is evaporated in a molecular state and attached to the surface of a plastic laser radar outer cover, wherein the deposition rate is 4 angstrom/second, so that the thickness of a second zirconium dioxide film layer is 28.63-28.83nm;
C. plating a third film layer:
keeping an electron gun wire of a vacuum electron beam evaporator in a heating and vacuum state, forming a thin beam by electron current and bombarding the surface of a silicon dioxide film material to change the silicon dioxide film material into a second film which is evaporated in a molecular state and attached to the surface of the plastic laser radar outer cover, wherein the deposition rate is 8 angstroms/second, so that the thickness of the third film of the silicon dioxide film is 34.53-34.73nm;
D. plating a fourth film layer:
keeping an electron gun wire of a vacuum electron beam evaporator in a heating and vacuum state, forming a thin beam by electron current and bombarding the surface of a zirconium dioxide film material to change the zirconium dioxide film material into a third film which is evaporated in a molecular state and attached to the surface of the outer cover of the glue-observing laser radar, wherein the deposition rate is 4 angstrom/second, so that the thickness of the fourth layer of the zirconium dioxide film is 44.91-45.11nm;
E. plating a fifth film layer:
keeping the heating and vacuum state of an electron gun wire of the vacuum electron beam evaporator, forming a thin beam by electron current and bombarding the surface of a silicon dioxide film material to change the silicon dioxide film material into a molecular state, evaporating and attaching the molecular state on the surface of a fourth film layer on the plastic laser radar, wherein the deposition rate is 8 angstroms/second, so that the thickness of the fifth film silicon dioxide film layer is 49.63-49.83nm;
F. plating a sixth film layer:
keeping the heating and vacuum state of an electron gun wire of the vacuum electron beam evaporator, forming a thin beam by electron current and bombarding the surface of the aluminum sesquioxide material, so that the material of the aluminum sesquioxide film layer is changed into a molecular state and evaporated and attached to the surface of a fifth film layer on the outer cover of the glue-observing laser radar, wherein the deposition rate is 8 angstroms/second, and the thickness of the sixth film layer of the aluminum sesquioxide is 29.90-30.10nm;
G. plating a seventh film layer:
keeping the heating and vacuum state of an electron gun wire of the vacuum electron beam evaporator, forming a thin beam by electron current and bombarding the surface of a silicon dioxide film material to change the silicon dioxide film material into a molecular state, evaporating and attaching the molecular state on the surface of a sixth film layer on the plastic laser radar outer cover, wherein the deposition rate is 8 angstroms/second, so that the thickness of the seventh film silicon dioxide film layer is 59.37-59.57nm;
(3) Turning off the ion source, and depositing an eighth film layer:
closing the ion source, continuously keeping the electron gun wire of the vacuum electron beam evaporator in a heating and vacuum state, forming a thin beam by electron current and bombarding the surface of the AF film layer material, so that the AF film layer material is changed into a molecular state and evaporated and attached to the seventh layer surface of the plastic laser radar outer cover, wherein the deposition rate is 10 angstroms/second, and the thickness of the eighth layer anti-fingerprint AF film layer is 29.90-30.10nm;
further, the baking temperature of the baking treatment in the step (1) is 55-65 ℃, and the baking time of the baking treatment is 1 hour.
Further, in the step (2) and the step (3), a crystal diaphragm thickness controller is adopted to control the thickness of each film layer.
The invention has the beneficial effects that: the optical antireflection film body is plated on the laser radar outer cover, so that the laser radar outer cover has a good antireflection effect, the reflectivity of the laser radar outer cover is lower than 0.05% at the working waveband of 895-915nm, the optical antireflection film body has no obvious film color, a black appearance can be realized when the optical antireflection film body is deposited on the surface of the laser radar outer cover, and the hardness of the plastic base material can be directly and effectively improved by adopting the optical antireflection film body composed of hard film materials.
Drawings
FIG. 1 is a film layer layout of the present invention;
FIG. 2 is a bar graph showing first and second order susceptibility coefficients of a film layer of an optical antireflection film according to the present invention;
FIG. 3 is a diagram showing the data analysis of the reflectivity of the optical antireflection film according to the present invention;
FIG. 4 is a chromaticity diagram of an optical antireflection film of the present invention.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
Referring to fig. 1 to 4, the present invention provides an embodiment: an optical antireflection film of a plastic laser radar outer cover is characterized in that: the optical anti-reflection film comprises an optical anti-reflection film body plated on a laser radar outer cover, wherein the optical anti-reflection film body is provided with eight film layers, the eight film layers comprise a silicon dioxide film layer, a zirconium dioxide film layer, an aluminum oxide film layer and an anti-fingerprint AF film layer, and the silicon dioxide film layer, the zirconium dioxide film layer, the aluminum oxide film layer and the anti-fingerprint AF film layer form the optical anti-reflection film body. Silicon dioxide, zirconium dioxide and aluminum oxide are high-transmittance low-refraction materials and are also ultra-hard wear-resistant materials, the AF film material can enable oil stains such as fingerprints to be not easy to remain and has excellent surface performance of being easily wiped, the optical antireflection film body formed by the silicon dioxide film layer, the zirconium dioxide film layer, the aluminum oxide film layer and the fingerprint-proof AF film layer has a very good antireflection effect, as shown in figure 3, the reflectivity of the optical antireflection film body in a working wave band of 895-915nm is lower than 0.05%, the hardness of a plastic base material can be directly and effectively improved, meanwhile, the adhesion of fingerprints on a laser radar outer cover can be reduced, so that the precision of a laser radar is influenced, meanwhile, the laser radar outer cover is generally black, the optical antireflection film body has no obvious film color, as shown in figure 4, the reflected light of the optical antireflection film is white, the optical antireflection film has the high-transmittance characteristic, the optical antireflection film is nearly colorless, and the black appearance of the laser radar outer cover cannot be influenced.
Referring to fig. 1 to 4, in an embodiment of the invention, the eight film layers include four silicon dioxide film layers, two zirconium dioxide film layers, one aluminum oxide film layer, and one anti-fingerprint AF film layer. The hardness of the optical antireflection film body can be better improved by arranging four layers of silicon dioxide, zirconium dioxide and aluminum oxide materials, wherein the silicon dioxide is the material with the hardest hardness, and the hardness of the optical antireflection film body can be improved by measuring the hardness HB of a PC (polycarbonate) base material before coating, the hardness of the PC base material after coating 2H, the hardness of the PEI (polyetherimide) base material before coating and the hardness of the PEI base material after coating 3H by using a pencil hardness test method under the condition of bearing a load of 750g, so that the surface hardness of the laser radar outer cover can be effectively improved; the optical antireflection film can reduce and effectively reduce the surface reflectivity of the laser radar housing and reduce energy loss through a film system structure (namely the optical antireflection film) formed by alternately overlapping materials with different refractive indexes according to the light interference principle, and the AF film layer can play a role in preventing dirt and water, improving the scratch resistance and prolonging the service life of the laser radar housing. Therefore, the performance of the laser radar outer cover plated with the optical antireflection film body can be effectively improved.
Referring to fig. 1 to 4, in an embodiment of the invention, the refractive index of the zirconium dioxide film is 1.95-2.05, the refractive index of the silicon dioxide film is 1.43-1.47, the refractive index of the aluminum oxide film is 1.65-1.69, and the refractive index of the anti-fingerprint AF film is 1.48-1.5. In the invention, the measured refractive index of the zirconium dioxide is preferably 2.03, the measured refractive index of the silicon dioxide is preferably 1.46, the measured refractive index of the aluminum oxide is preferably 1.68, the measured refractive index of the anti-fingerprint AF film layer is preferably 1.49, the refractive index of the substrate PC is preferably 1.59, the test wavelength is 550nm, and the incident angle of light is preferably 0 degree.
As shown in fig. 1 to fig. 4, in an embodiment of the present invention, the eight-layer film is sequentially disposed from a near side to a far side of the laser radar housing, and includes a first layer, a second layer, a third layer, a fourth layer, a fifth layer, a sixth layer, a seventh layer, and an eighth layer, where the first layer is the silicon dioxide film, the second layer is the zirconium dioxide film, the third layer is the silicon dioxide film, the fourth layer is the zirconium dioxide film, the fifth layer is the silicon dioxide film, the sixth layer is the aluminum oxide film, the seventh layer is the silicon dioxide film, and the eighth layer is the anti-fingerprint AF film. The film system structure is formed by alternately superposing materials with different refractive indexes, when light beams pass through the film system structure, the light can generate multiple reflections at each film layer interface, and the reflection light of different interfaces realizes the antireflection effect through destructive interference of light. Therefore, the film layers are arranged in the sequence, so that the performance of the optical antireflection film body can be better improved, and a better antireflection effect is achieved.
As shown in fig. 1 to 4, in an embodiment of the invention, the thickness of the first layer is 188.69-188.89nm, the thickness of the second layer is 28.63-28.83nm, the thickness of the third layer is 34.53-34.73nm, the thickness of the fourth layer is 44.91-45.11nm, the thickness of the fifth layer is 49.63-49.83nm, the thickness of the sixth layer is 29.90-30.10nm, the thickness of the seventh layer is 59.57-59.67nm, and the thickness of the eighth layer is 29.90-30.10nm. All the film layers of the optical antireflection film main body are larger than 20nm in thickness and have no thin layer, wherein a graph 2 shows first-order sensitivity and second-order sensitivity of the film layers of the optical antireflection film, the abscissa in the graph shows different film layers, the ordinate shows the sensitivity coefficient of the film layers, and the larger the sensitivity coefficient is, the more sensitive the film layers are to thickness errors is shown. As can be seen from the figure, the sensitivity coefficients of the 8 film layers are all in the order of 10-4, the sensitivity coefficients are lower, and the film layer thickness error has good tolerance on the film layer thickness error in production, thereby being beneficial to the production stability.
Referring to fig. 1 to 4, another embodiment of the present invention is provided: a preparation method of an optical antireflection film of a plastic laser radar outer cover is characterized by comprising the following steps:
(1) And (4) cleaning the plastic laser radar outer cover by using an ultrasonic cleaning machine, and then baking.
(2) Putting the plastic laser radar outer cover baked in the step (1) into a vacuum electron beam evaporation coating machine, wherein the vacuum degree of the vacuum electron beam evaporation coating machine is set to be 3 multiplied by 10 -3 Pa，Setting the environmental heating temperature of a plating vacuum chamber to be 50 ℃, starting an ion source, and sequentially depositing a first film layer to a seventh film layer on the surface of the plastic laser radar outer cover after baking treatment:
A. plating a first film layer:
keeping an electron gun wire of a vacuum electron beam evaporator in a heating and vacuum state, forming a thin beam by electron current and bombarding the surface of a silicon dioxide film material to change the silicon dioxide film material into a molecular state, evaporating and attaching the molecular state to the surface of a plastic laser radar outer cover, wherein the deposition rate is 8 angstroms/second, and the thickness of a first film of the silicon dioxide film is 188.69-188.89nm;
B. plating a second film layer:
keeping an electron gun wire of a vacuum electron beam evaporator in a heating and vacuum state, forming a thin beam by electron current and bombarding the surface of a zirconium dioxide film layer material to change the zirconium dioxide film layer material into a first film layer which is evaporated in a molecular state and attached to the surface of a plastic laser radar outer cover, wherein the deposition rate is 4 angstrom/second, so that the thickness of a second zirconium dioxide film layer is 28.63-28.83nm;
C. plating a third film layer:
keeping an electron gun wire of a vacuum electron beam evaporator in a heating and vacuum state, forming a fine beam by electron flow and bombarding the surface of a silicon dioxide film material to change the silicon dioxide film material into a second film which is evaporated in a molecular state and attached to the surface of the plastic laser radar outer cover, wherein the deposition rate is 8 angstroms/second, and the thickness of the third film of the silicon dioxide film is 34.53-34.73nm;
D. plating a fourth film layer:
keeping an electron gun wire of a vacuum electron beam evaporator in a heating and vacuum state, forming a thin beam by electron current and bombarding the surface of a zirconium dioxide film material to change the zirconium dioxide film material into a third film which is evaporated in a molecular state and attached to the surface of the plastic laser radar outer cover, wherein the deposition rate is 4 angstrom/second, so that the thickness of the fourth layer of the zirconium dioxide film is 44.91-45.11nm;
E. plating a fifth film layer:
keeping an electron gun wire of a vacuum electron beam evaporator in a heating and vacuum state, forming a thin beam by electron current and bombarding the surface of a silicon dioxide film material to change the silicon dioxide film material into a molecular state, evaporating and attaching the molecular state on the surface of a fourth film on a glue-observing laser radar, wherein the deposition rate is 8 angstroms/second, so that the thickness of the fifth film silicon dioxide film is 49.63-49.83nm;
F. plating a sixth film layer:
keeping the heating and vacuum state of an electron gun wire of the vacuum electron beam evaporator, forming a thin beam by electron current and bombarding the surface of the aluminum sesquioxide material, so that the material of the aluminum sesquioxide film layer is changed into a molecular state to be evaporated and attached to the surface of a fifth film layer on the plastic laser radar outer cover, wherein the deposition rate is 8 angstroms/second, and the thickness of the sixth film layer of the aluminum sesquioxide is 29.90-30.10nm;
G. plating a seventh film layer:
keeping an electron gun wire of the vacuum electron beam evaporator in a heating and vacuum state, forming a thin beam by electron current and bombarding the surface of a silicon dioxide film material to change the silicon dioxide film material into a molecular state, evaporating and attaching to the surface of a sixth film layer on the outer cover of the glue-observing laser radar, wherein the deposition rate is 8 angstroms/second, and the thickness of the seventh film silicon dioxide film layer is 59.37-59.57nm;
(3) Turning off the ion source, and depositing an eighth film layer:
closing the ion source, continuously keeping the electron gun wire of the vacuum electron beam evaporator in a heating and vacuum state, forming a thin beam by electron current and bombarding the surface of the AF film layer material, so that the AF film layer material is changed into a molecular state and evaporated and attached to the seventh layer surface of the plastic laser radar outer cover, wherein the deposition rate is 10 angstroms/second, and the thickness of the eighth layer anti-fingerprint AF film layer is 29.90-30.10nm;
the method mainly comprises the steps of cleaning and drying impurities affecting coating on a laser radar outer cover, then placing the impurities into a vacuum electron beam evaporation coating machine, setting the temperature and the vacuum degree, enabling a part of electrons in an electron gun wire of the vacuum electron beam evaporation machine to obtain enough energy to escape from the surface when the electron gun wire is in a high-temperature state, forming thermal electron emission, enabling electron current moving at high speed to be gathered into fine beams and bombard the surface of an evaporation material under the action of a certain electromagnetic field, enabling the energy to be changed into heat energy, enabling the material to be changed into a molecular state to be evaporated and attached to the surface of a product, sequentially depositing all film layers on the surface of the plastic laser radar outer cover, and adopting an ion source to generate ions to bombard the growing film layers in the process of depositing the first film layer to the seventh film layer, wherein the ion source can improve the adhesive force and the compactness of the first film layer to the seventh film layer. And closing the ion source before depositing the eighth film layer, and continuously depositing the eighth film layer anti-fingerprint AF film layer.
Referring to fig. 1 to 4, in an embodiment of the invention, the method for preparing the optical antireflection film of the plastic laser radar housing according to claim 5 is characterized in that: the baking temperature of the baking treatment in the step (1) is 55-65 ℃, and the baking time of the baking treatment is 1 hour. Wherein the baking is mainly to get rid of the inside moisture of plastic materials, improves the adhesive force of rete, and the baking temperature is crossed low moisture and is difficult for getting rid of, and too high easily causes the deformation of plastics laser radar dustcoat. Therefore, the baking temperature can be selected from 50-100 ℃, the baking time can be selected from 1-5 hours, wherein the preferential baking temperature can be set to 55-65 ℃, and the baking time of the baking treatment can be set to 1 hour.
Referring to fig. 1 to 4, in an embodiment of the invention, in step (2) and step (3), a crystal diaphragm thickness controller is used to control the thickness of each film layer. The work of the crystal diaphragm thickness control instrument is stable, and the crystal diaphragm thickness control instrument is used for controlling the speed and the film thickness to achieve high precision.
The invention has the following working principle: the optical antireflection film main body comprises eight film layers, wherein the eight film layers comprise four silicon dioxide (SIO 2) film layers, two zirconium dioxide (ZRO 2) film layers, one aluminum oxide (AL 2O 3) film layer and one anti-fingerprint (AF) film layer, wherein the silicon dioxide (SIO 2), the zirconium dioxide (ZRO 2) and the aluminum oxide (AL 2O 3) are antireflection materials and are materials with higher hardness, the silicon dioxide film layers, the zirconium dioxide film layers, the silicon dioxide film layers and the aluminum oxide film layers are sequentially plated on a laser radar outer cover, the silicon dioxide film layers and the anti-fingerprint AF film layers, and a film system structure (namely an optical antireflection film) formed by alternately stacking materials with different refractive indexes can effectively reduce the surface reflectivity of the laser radar outer cover through the light interference principle, reduce energy loss, enable the laser radar outer cover to have a good antireflection effect, can improve the hardness of the laser radar, can reduce the fingerprint adhesion of the anti-fingerprint AF film layers, can also improve the hardness of the laser radar, and can control the thickness of a laser beam deposition precision ion source when a laser beam is deposited on the surface of a laser radar, and a compact ion source is controlled by utilizing the electron beam deposition.
The above description is only a preferred embodiment of the present invention, and should not be construed as limiting the present invention, and all equivalent variations and modifications made in the claims of the present invention should be covered by the present invention.
Claims (8)
1. An optical antireflection film of a plastic laser radar outer cover is characterized in that: the optical anti-reflection film comprises an optical anti-reflection film body plated on a laser radar outer cover, wherein the optical anti-reflection film body is provided with eight film layers, the eight film layers comprise a silicon dioxide film layer, a zirconium dioxide film layer, an aluminum oxide film layer and an anti-fingerprint AF film layer, and the silicon dioxide film layer, the zirconium dioxide film layer, the aluminum oxide film layer and the anti-fingerprint AF film layer form the optical anti-reflection film body.
2. The optical antireflection film of the plastic laser radar housing according to claim 1, wherein: the eight film layers comprise four silicon dioxide film layers, two zirconium dioxide film layers, one aluminum oxide film layer and one anti-fingerprint AF film layer.
3. The optical antireflection film of the plastic laser radar housing according to claim 2, wherein: the refractive index of the zirconium dioxide film layer is 1.95-2.05, the refractive index of the silicon dioxide film layer is 1.43-1.47, the refractive index of the aluminum oxide film layer is 1.65-1.69, and the refractive index of the anti-fingerprint AF film layer is 1.48-1.5.
4. The optical antireflection film of the plastic laser radar housing according to claim 2, wherein: eight retes from laser radar dustcoat from nearly to setting gradually first layer, second floor, third layer, fourth layer, fifth layer, sixth layer, seventh layer, eighth layer far away, the first layer does the silica rete, the second floor does the zirconia rete, the third layer does the silica rete, the fourth layer does the zirconia rete, the fifth layer does the silica rete, the sixth layer does the aluminium third oxide rete, the seventh layer does the silica rete, the eighth layer does prevent AF fingerprint rete.
5. The optical antireflection film of a plastic laser radar housing according to claim 3, wherein: the thickness of the first layer is 188.69-188.89nm, the thickness of the second layer is 28.63-28.83nm, the thickness of the third layer is 34.53-34.73nm, the thickness of the fourth layer is 44.91-45.11nm, the thickness of the fifth layer is 49.63-49.83nm, the thickness of the sixth layer is 29.90-30.10nm, the thickness of the seventh layer is 59.37-59.57nm, and the thickness of the eighth layer is 29.90-30.10nm.
6. A method for preparing the optical antireflection film for the plastic laser radar housing according to claim 1, wherein the method comprises the following steps:
(1) And (4) cleaning the plastic laser radar outer cover by using an ultrasonic cleaning machine, and then baking.
(2) Putting the plastic laser radar outer cover baked in the step (1) into a vacuum electron beam evaporation coating machine, wherein the vacuum degree of the vacuum electron beam evaporation coating machine is set to be 3 multiplied by 10 -3 Pa, setting the ambient heating temperature of the plating vacuum chamber to be 50 ℃, starting an ion source, and sequentially depositing a first film layer to a seventh film layer on the surface of the plastic laser radar outer cover after baking treatment:
A. plating a first film layer:
keeping an electron gun wire of a vacuum electron beam evaporator in a heating and vacuum state, forming a fine beam by electron flow and bombarding the surface of a silicon dioxide film material to change the silicon dioxide film material into a molecular state to be evaporated and attached to the surface of a plastic laser radar outer cover, wherein the deposition rate is 8 angstroms/second, and the thickness of a first film of the silicon dioxide film is 188.69-188.89nm;
B. plating a second film layer:
keeping an electron gun wire of a vacuum electron beam evaporator in a heating and vacuum state, forming a thin beam by electron flow and bombarding the surface of a zirconium dioxide film material to change the zirconium dioxide film material into a first film which is evaporated in a molecular state and attached to the surface of a plastic laser radar outer cover, wherein the deposition rate is 4 angstrom/second, and the thickness of a second layer of the zirconium dioxide film is 28.63-28.83nm;
C. plating a third film layer:
keeping an electron gun wire of a vacuum electron beam evaporator in a heating and vacuum state, forming a thin beam by electron current and bombarding the surface of a silicon dioxide film material to change the silicon dioxide film material into a second film which is evaporated in a molecular state and attached to the surface of the outer cover of the glue-observing laser radar, wherein the deposition rate is 8 angstroms/second, so that the thickness of the third film of the silicon dioxide film is 34.53-34.73nm;
D. plating a fourth film layer:
keeping an electron gun wire of a vacuum electron beam evaporator in a heating and vacuum state, forming a thin beam by electron current and bombarding the surface of a zirconium dioxide film material to change the zirconium dioxide film material into a third film which is evaporated in a molecular state and attached to the surface of the plastic laser radar outer cover, wherein the deposition rate is 4 angstrom/second, so that the thickness of the fourth layer of the zirconium dioxide film is 44.91-45.11nm;
E. plating a fifth film layer:
keeping an electron gun wire of a vacuum electron beam evaporator in a heating and vacuum state, forming a thin beam by electron current and bombarding the surface of a silicon dioxide film material to change the silicon dioxide film material into a molecular state, evaporating and attaching the molecular state on the surface of a fourth film on a glue-observing laser radar, wherein the deposition rate is 8 angstroms/second, so that the thickness of the fifth film silicon dioxide film is 49.63-49.83nm;
F. plating a sixth film layer:
keeping the heating and vacuum state of an electron gun wire of the vacuum electron beam evaporator, forming a thin beam by electron current and bombarding the surface of the aluminum sesquioxide material, so that the material of the aluminum sesquioxide film layer is changed into a molecular state and evaporated and attached to the surface of a fifth film layer on the outer cover of the glue-observing laser radar, wherein the deposition rate is 8 angstroms/second, and the thickness of the sixth film layer of the aluminum sesquioxide is 29.90-30.10nm;
G. plating a seventh film layer:
keeping an electron gun wire of the vacuum electron beam evaporator in a heating and vacuum state, forming a thin beam by electron current and bombarding the surface of a silicon dioxide film material to change the silicon dioxide film material into a molecular state, evaporating and attaching to the surface of a sixth film layer on the outer cover of the glue-observing laser radar, wherein the deposition rate is 8 angstroms/second, and the thickness of the seventh film silicon dioxide film layer is 59.37-59.57nm;
(3) Turning off the ion source, and depositing an eighth film layer:
and closing the ion source, continuously keeping the electron gun wire of the vacuum electron beam evaporator in a heating and vacuum state, forming a fine beam by electron current, bombarding the surface of the AF film layer material, changing the AF film layer material into a molecular state, evaporating and attaching the AF film layer material to the surface of the seventh layer on the plastic laser radar outer cover, and depositing at a deposition rate of 10 angstroms per second so that the thickness of the eighth layer anti-fingerprint AF film layer is 29.90-30.10nm.
7. The preparation method of the optical antireflection film of the plastic laser radar housing according to claim 6, wherein the preparation method comprises the following steps: the baking temperature of the baking treatment in the step (1) is 55-65 ℃, and the baking time of the baking treatment is 1 hour.
8. The preparation method of the optical antireflection film of the plastic laser radar housing according to claim 6, wherein the preparation method comprises the following steps: in the step (2) and the step (3), a crystal diaphragm thickness controller is adopted to control the thickness of each film layer.
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| WO2013084997A1 (en) * | 2011-12-07 | 2013-06-13 | 株式会社ニコン・エシロール | Optical component production method |
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| CN216849151U (en) * | 2022-02-10 | 2022-06-28 | 蓝思科技股份有限公司 | Anti-dazzle integral color cover plate and screen |
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|---|---|---|---|---|
| JP2010266658A (en) * | 2009-05-14 | 2010-11-25 | Lintec Corp | Antireflective film and polarizing plate using the same |
| WO2013084997A1 (en) * | 2011-12-07 | 2013-06-13 | 株式会社ニコン・エシロール | Optical component production method |
| CN204142981U (en) * | 2014-05-21 | 2015-02-04 | 利达光电股份有限公司 | A kind of superhard reflective waterproof and oilproof film that disappears |
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