CN115296638A - Resonator and preparation method thereof - Google Patents
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
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- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Abstract
The application provides a resonator and a preparation method thereof, relates to the technical field of resonators, and comprises a substrate, and a lower electrode, a composite piezoelectric layer and an upper electrode which are sequentially stacked on the substrate, wherein a plurality of temperature compensation blocks are arranged in the composite piezoelectric layer and are positioned in an effective working area, and the temperature compensation blocks are distributed in a plane perpendicular to the stacking direction, so that the temperature compensation range of the effective working area can be ensured. On the basis, a plurality of temperature compensation blocks are distributed in an interval mode, so that the normal electrical performance of the area between any two adjacent temperature compensation blocks can be kept, the temperature compensation range is ensured, meanwhile, the continuous coverage area of the single temperature compensation block on an effective working area can be obviously reduced, and the influence on the electrical performance of the resonator due to the arrangement of the temperature compensation structure is reduced.
Description
Technical Field
The application relates to the technical field of resonators, in particular to a resonator and a preparation method thereof.
Background
The ultra-high speed development of wireless communication technology and the multi-functionalization of communication terminals put forward higher performance requirements for frequency devices working in a radio frequency band, compared with the traditional dielectric ceramic filter and SAW filter, the filter based on a Film Bulk Acoustic Resonator (FBAR) can work well in the range of hundreds of MHz to 5-6GHz, especially in the application of high frequency, the FBAR filter has great advantages, the FBAR filter has the characteristics of high frequency, low loss and low temperature drift, steep filter skirt edge and extremely high Q value, working frequency, sensitivity, resolution, bearable power capacity, small volume and the characteristic that the preparation process is compatible with CMOS, therefore, the FBAR occupies most of the application field of wireless communication.
The temperature stability of the FBAR device greatly affects the performance of the device, and for a high-performance device, good temperature stability is required, and in the prior art, an entire temperature compensation layer is usually added in a resonator stack structure to compensate the influence of temperature on the device, and since the temperature compensation layer is usually an insulating material, the temperature compensation layer has a large influence on the electrical performance of the device.
Disclosure of Invention
The present application provides a resonator and a method for manufacturing the same to overcome the above-mentioned shortcomings in the prior art, so as to improve the influence of the existing added whole temperature compensation layer on the electrical performance of the resonator.
In order to achieve the above purpose, the technical solutions adopted in the embodiments of the present application are as follows:
in one aspect of the embodiments of the present application, a resonator is provided, including a substrate, and a lower electrode, a composite piezoelectric layer, and an upper electrode stacked on the substrate in sequence, where a plurality of temperature compensation blocks are disposed in the composite piezoelectric layer and spaced from each other, and the plurality of temperature compensation blocks are distributed in a plane perpendicular to a stacking direction and located in an effective working area of the resonator.
Optionally, the composite piezoelectric layer includes a plurality of single crystal piezoelectric layers stacked on the lower electrode in sequence, and the plurality of temperature compensation blocks are located in any one of the plurality of single crystal piezoelectric layers.
Optionally, the multilayer single crystal piezoelectric layer at least includes a first single crystal piezoelectric layer and a second single crystal piezoelectric layer, which are stacked, where a doping concentration of the first single crystal piezoelectric layer is greater than a doping concentration of the second single crystal piezoelectric layer, and an electromechanical coupling coefficient of the resonator is positively correlated to the doping concentration of the first single crystal piezoelectric layer; or the multilayer single crystal piezoelectric layer at least comprises a first single crystal piezoelectric layer and a second single crystal piezoelectric layer which are arranged in a stacking mode, the doping concentration of the first single crystal piezoelectric layer is larger than that of the second single crystal piezoelectric layer, and the electromechanical coupling coefficient of the resonator is positively correlated with the thickness ratio of the first single crystal piezoelectric layer to the second single crystal piezoelectric layer.
Optionally, a support layer is further disposed between the lower electrode and the substrate, and an air cavity is formed on one side of the support layer close to the lower electrode.
Optionally, a first transition layer and a second transition layer which are bonded to each other are further disposed between the support layer and the substrate.
In another aspect of the embodiments of the present application, a method for manufacturing a resonator is provided, where the method includes: providing a substrate; and manufacturing a lower electrode, a composite piezoelectric layer and an upper electrode which are sequentially stacked on the substrate, wherein the composite piezoelectric layer is internally provided with a plurality of temperature compensation blocks which are mutually spaced, and the plurality of temperature compensation blocks are distributed in a plane vertical to the stacking direction and are positioned in an effective working area of the resonator.
Optionally, the step of manufacturing a lower electrode, a composite piezoelectric layer, and an upper electrode stacked in sequence on a substrate includes: providing a temporary substrate; forming a composite piezoelectric layer on a temporary substrate; sequentially depositing a lower electrode and a supporting layer on the composite piezoelectric layer to obtain a prefabricated device; arranging one side of the prefabricated device with the supporting layer on the substrate through a bonding process; removing the temporary substrate to expose the composite piezoelectric layer; and depositing an upper electrode on the composite piezoelectric layer.
Optionally, the forming the composite piezoelectric layer on the temporary substrate includes: growing a second single crystal piezoelectric layer on the temporary substrate; forming a plurality of mutually spaced grooves on the second single crystal piezoelectric layer by etching, wherein the grooves are distributed in a plane vertical to the stacking direction and are positioned in an effective working area of the resonator; a temperature compensation block is filled in each groove; a first single crystal piezoelectric layer is grown on a second single crystal piezoelectric layer having a temperature compensation block.
Optionally, forming the composite piezoelectric layer on the temporary substrate includes: growing a second single crystal piezoelectric layer and a first single crystal piezoelectric layer on the temporary substrate in sequence; forming a plurality of grooves which are spaced from each other on one side of the first single crystal piezoelectric layer, which is far away from the second single crystal piezoelectric layer, by etching, wherein the grooves are distributed in a plane vertical to the stacking direction and are positioned in an effective working area of the resonator; and a temperature compensation block is filled in each groove.
Optionally, the multilayer single crystal piezoelectric layer at least includes a first single crystal piezoelectric layer and a second single crystal piezoelectric layer, which are stacked, where a doping concentration of the first single crystal piezoelectric layer is greater than a doping concentration of the second single crystal piezoelectric layer, and an electromechanical coupling coefficient of the resonator is positively correlated with the doping concentration of the first single crystal piezoelectric layer; or the multilayer single crystal piezoelectric layer at least comprises a first single crystal piezoelectric layer and a second single crystal piezoelectric layer which are stacked, the doping concentration of the first single crystal piezoelectric layer is greater than that of the second single crystal piezoelectric layer, and the electromechanical coupling coefficient of the resonator is positively correlated with the thickness ratio of the first single crystal piezoelectric layer to the second single crystal piezoelectric layer.
The beneficial effect of this application includes:
the application provides a resonator and a preparation method thereof, the resonator comprises a substrate, a lower electrode, a composite piezoelectric layer and an upper electrode, wherein the lower electrode, the composite piezoelectric layer and the upper electrode are sequentially stacked on the substrate, a plurality of temperature compensation blocks are arranged in the composite piezoelectric layer and are positioned in an effective working area, and the temperature compensation blocks are distributed in a plane perpendicular to the stacking direction, namely, are transversely distributed, so that the temperature compensation of the effective working area can be ensured, and the resonator has good temperature compensation capability. On this basis, a plurality of temperature compensation pieces adopt spaced mode to distribute each other, so still be the material of compound piezoelectric layer between arbitrary two adjacent temperature compensation pieces, so, just can keep normal electric property in the region between arbitrary two adjacent temperature compensation pieces, thereby realize when guaranteeing the temperature compensation scope, compare in the current mode that directly covers effective work area through continuous whole layer temperature compensation layer, this application can show the continuous coverage area that reduces monomer temperature compensation piece to effective work area, thereby reduce the influence that causes the electric property of resonator because of setting up the temperature compensation structure.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
Fig. 1 is a schematic flow chart of a resonator manufacturing method according to an embodiment of the present disclosure;
fig. 2 is a schematic diagram of a state of a resonator manufacturing method according to an embodiment of the present disclosure;
FIG. 3 is a plan view of the resonator of FIG. 2 in a prepared state;
fig. 4 is a second state diagram illustrating a method for manufacturing a resonator according to an embodiment of the present disclosure;
fig. 5 is a third schematic state diagram of a resonator manufacturing method according to an embodiment of the present application;
fig. 6 is a fourth schematic state diagram of a resonator manufacturing method according to an embodiment of the present application;
fig. 7 is a fifth state diagram illustrating a resonator manufacturing method according to an embodiment of the present application;
fig. 8 is a sixth schematic view illustrating a state of a resonator manufacturing method according to an embodiment of the present application;
fig. 9 is a seventh schematic diagram illustrating a state of a resonator manufacturing method according to an embodiment of the present application;
fig. 10 is an eighth schematic diagram illustrating a state of a resonator manufacturing method according to an embodiment of the present application;
fig. 11 is a ninth schematic diagram illustrating a state of a resonator manufacturing method according to an embodiment of the present application;
fig. 12 is a state diagram illustrating a resonator manufacturing method according to an embodiment of the present application;
fig. 13 is an eleventh schematic diagram illustrating a state of a method for manufacturing a resonator according to an embodiment of the present application;
fig. 14 is a schematic structural diagram of a resonator according to an embodiment of the present application;
fig. 15 is a schematic state diagram of another resonator manufacturing method according to an embodiment of the present application;
fig. 16 is a schematic structural diagram of another resonator provided in an embodiment of the present application;
fig. 17 is a schematic structural diagram of another resonator provided in an embodiment of the present application;
fig. 18 is a schematic structural diagram of another resonator provided in an embodiment of the present application;
fig. 19 is a graph showing the resonant impedance response curves of resonators of five different piezoelectric materials when the thickness of the piezoelectric layer is kept uniform.
Icon: 10-a temporary substrate; 11-a substrate; 20-a second single crystal piezoelectric layer; 30-a groove; 40-a temperature compensation block; 41-a sacrificial layer; 42-a first buffer layer; 43-a second buffer layer; 50-a first single crystal piezoelectric layer; 60-a lower electrode; 70-a support layer; 80-a first bonding layer; 81-a second bonding layer; 90-leading out holes; 91-extracting electrodes; 100-an upper electrode; 110-air chamber.
Detailed Description
The embodiments set forth below represent the necessary information to enable those skilled in the art to practice the embodiments and illustrate the best mode of practicing the embodiments. Upon reading the following description in light of the accompanying drawing figures, those skilled in the art will understand the concepts of the disclosure and will recognize applications of these concepts not particularly addressed herein. It should be understood that these concepts and applications fall within the scope of the disclosure and the accompanying claims.
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present disclosure. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
It will be understood that when an element such as a layer, region or substrate is referred to as being "on" or "extending" onto "another element, it can be directly on or extend directly onto the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or extending "directly onto" another element, there are no intervening elements present. Also, it will be understood that when an element such as a layer, region or substrate is referred to as being "on" or "extending over" another element, it can be directly on or extend directly over the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or extending "directly over" another element, there are no intervening elements present. It will also be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present.
Relative terms such as "below" or "at 823030; or" above "or" lower "or" horizontal "or" vertical "may be used herein to describe one element, layer or region's relationship to another element, layer or region, as illustrated in the figures. It will be understood that these terms and those discussed above are intended to encompass different orientations of the device in addition to the orientation depicted in the figures.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms used herein should be interpreted as having a meaning that is consistent with their meaning in the context of this specification and the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
In an aspect of the embodiment of the present application, there is provided a resonator, as shown in fig. 14, including a substrate 11, and a lower electrode 60, a composite piezoelectric layer, and an upper electrode 100 sequentially stacked on the substrate 11, so that a functional layer of the resonator can be formed by the lower electrode 60, the composite piezoelectric layer, and the upper electrode 100, and an overlapping area of the lower electrode 60, the composite piezoelectric layer, and the upper electrode 100 in a forward projection of the substrate 11 serves as an effective working area of the resonator.
In order to improve the temperature stability of the resonator, a temperature compensation block 40 may be further disposed in the composite piezoelectric layer, as shown in fig. 14, when the temperature compensation block 40 is disposed, the temperature compensation blocks 40 may be disposed in a plurality, and since the temperature compensation blocks 40 are distributed in a plane perpendicular to the stacking direction (in combination with fig. 3 and 14), that is, laterally distributed, it is possible to ensure that the effective working area is temperature compensated, thereby having a good temperature compensation capability. On this basis, a plurality of temperature compensation piece 40 adopt spaced mode to distribute each other, so still be the material of compound piezoelectric layer between arbitrary two adjacent temperature compensation piece 40, so, just can keep normal electric property in the region between arbitrary two adjacent temperature compensation piece 40, thereby realize when guaranteeing the temperature compensation scope, compare in the current mode of directly covering effective working area through continuous whole layer temperature compensation layer, this application can show the continuous coverage area that reduces monomer temperature compensation piece 40 to effective working area, thereby reduce the influence that causes the resonator electrical property because of setting up the temperature compensation structure.
In some embodiments, the composite piezoelectric layer includes multiple single crystal piezoelectric layers stacked on the lower electrode 60 in sequence, the multiple temperature compensation blocks 40 are all located on any one of the multiple single crystal piezoelectric layers, for example, the multiple temperature compensation blocks 40 are all located on a first single crystal piezoelectric layer, a second single crystal piezoelectric layer, or a third single crystal piezoelectric layer, so that under the condition of ensuring good temperature compensation capability and low influence of electrical performance, the quality of the composite piezoelectric layer can be effectively improved by using the single crystal piezoelectric layer, and the overall performance of the resonator is further improved. For example:
referring to fig. 14, the multi-layer single crystal piezoelectric layer includes a first single crystal piezoelectric layer 50 and a second single crystal piezoelectric layer 20 stacked on a lower electrode 60 in sequence, and a plurality of temperature compensation blocks 40 are disposed on a side of the second single crystal piezoelectric layer 20 close to the first single crystal piezoelectric layer 50.
Referring to fig. 16, the multi-layer single crystal piezoelectric layer includes a first single crystal piezoelectric layer 50 and a second single crystal piezoelectric layer 20 stacked on a lower electrode 60 in sequence, and a plurality of temperature compensation blocks 40 are all located on a side of the second single crystal piezoelectric layer 20 away from the first single crystal piezoelectric layer 50.
Referring to fig. 17, the multi-layer single crystal piezoelectric layer includes a first single crystal piezoelectric layer 50 and a second single crystal piezoelectric layer 20 stacked on a lower electrode 60 in sequence, and a plurality of temperature compensation blocks 40 are disposed on a side of the first single crystal piezoelectric layer 50 away from the second single crystal piezoelectric layer 20.
Referring to fig. 18, the multi-layer single crystal piezoelectric layer includes a first single crystal piezoelectric layer 50 and a second single crystal piezoelectric layer 20 stacked on a lower electrode 60 in sequence, and a plurality of temperature compensation blocks 40 are disposed on a side of the first single crystal piezoelectric layer 50 close to the second single crystal piezoelectric layer 20.
Since the temperature compensation block 40 is typically an insulating material, such as silicon dioxide, the provision of the temperature compensation block 40 in the composite piezoelectric layer reduces the electromechanical coupling coefficient of the resonator. The electromechanical coupling coefficient is adjusted in a concentration or thickness ratio mode (the same applies to the subsequent method), so that the influence of the temperature compensation block 40 on the electromechanical coupling coefficient of the resonator is compensated. Specifically, the method comprises the following steps:
in one embodiment, as shown in fig. 14, the multilayer single crystal piezoelectric layer includes a first single crystal piezoelectric layer 50 and a second single crystal piezoelectric layer 20 stacked on the lower electrode in sequence, wherein the doping concentration of the first single crystal piezoelectric layer 50 is greater than the doping concentration of the second single crystal piezoelectric layer 20, so that when adjusting the electromechanical coupling coefficient of the resonator, it can be achieved by changing the doping concentration of the first single crystal piezoelectric layer 50, and during the adjustment, the electromechanical coupling coefficient of the resonator and the doping concentration of the first single crystal piezoelectric layer 50 show a positive correlation trend (it is understood that the electromechanical coupling coefficient and the doping concentration of the first single crystal piezoelectric layer are positively correlated, that is, when only the doping concentration of the first single crystal piezoelectric layer is changed, the electromechanical coupling coefficient of the resonator is correspondingly increased, so that the electromechanical coupling coefficient of the resonator can be increased by increasing the doping concentration of the first single crystal piezoelectric layer 50, and the performance of the resonator is then improved. In other embodiments, the positions of the first single crystal piezoelectric layer 50 and the second single crystal piezoelectric layer 20 can be changed, that is, the multilayer single crystal piezoelectric layer includes the second single crystal piezoelectric layer and the first single crystal piezoelectric layer stacked on the lower electrode in sequence, and at this time, the electromechanical coupling coefficient of the resonator can still show a trend of positive correlation with the doping concentration of the first single crystal piezoelectric layer.
Specifically, as can be seen from fig. 19, when the thickness of the piezoelectric layer is kept consistent, the resonant impedance response curves of the resonator of five different piezoelectric materials are: three single-layer piezoelectric materials AlN and Sc 0.09 Al 0.91 N、Sc 0.20 Al 0.80 N, and two double-layer piezoelectric materials AlN/Sc with the thickness ratio of 1 0.09 Al 0.91 N、AlN/Sc 0.20 Al 0.80 N, wherein Sc 0.09 Al 0.91 N represents that the Sc doping proportion in the AlN material is 9 percent, and the other same reason is the same. The series resonant frequency and the parallel resonant frequency corresponding to the resonators made of the five different piezoelectric materials, and the electromechanical coupling coefficients are respectively shown in table 1 below:
TABLE 1 corresponding frequencies and electromechanical coupling coefficients of resonators under five different piezoelectric materials
As can be seen from table 1, the electromechanical coupling coefficients corresponding to three single-layer piezoelectric materials doped with Sc in different proportions (0%, 9%, 20%) are all different, and based on two double-layer piezoelectric materials with a thickness proportion of 1 under the three single-layer piezoelectric materials, the electromechanical coupling coefficients are all different from those of the original single-layer piezoelectric material, which indicates that the composite piezoelectric layer with different doping concentrations provided by the present application can achieve adjustment of the electromechanical coupling coefficients, and a resonator using the composite piezoelectric layer can achieve electromechanical coupling coefficients different from that of any single-layer piezoelectric material in the composite piezoelectric material, that is, the electromechanical coupling coefficients of the resonator are adjusted.
When the second single crystal piezoelectric layer/the first single crystal piezoelectric layer are AlN/ScAlN, it can be seen from table 1 that, when the thickness ratio of the second single crystal piezoelectric layer to the first single crystal piezoelectric layer is kept at 1, and the doping concentration of Sc in the first single crystal piezoelectric layer ScAlN is increased from 9% to 20%, correspondingly, the electromechanical coupling coefficient of the resonator is also increased from 8.629% to 10.474%, i.e., a positive correlation trend is shown.
Although the electromechanical coupling coefficient of the resonator can be increased by increasing the doping concentration of the composite piezoelectric layer, the loss in the corresponding material is also larger, which is also not beneficial to the performance improvement of the resonator. Therefore, this application can also be through dividing compound piezoelectric layer into multilayer single crystal piezoelectric layer to set up the doping concentration of arbitrary two-layer wherein to different, through the thickness ratio of the single crystal piezoelectric layer of the different doping concentrations of adjustment, and then effectively adjust the electromechanical coupling coefficient of resonator, for example:
in one embodiment, as shown in fig. 14, the multilayer single crystal piezoelectric layer includes at least a first single crystal piezoelectric layer 50 and a second single crystal piezoelectric layer 20 stacked on the lower electrode 60 in sequence, wherein the doping concentration of the first single crystal piezoelectric layer 50 is greater than the doping concentration of the second single crystal piezoelectric layer 20, so that when adjusting the electromechanical coupling coefficient of the resonator, it can be achieved by changing the thickness ratio of the first single crystal piezoelectric layer and the second single crystal piezoelectric layer, and during the adjustment, the electromechanical coupling coefficient of the resonator is positively correlated with the thickness ratio of the first single crystal piezoelectric layer 50 and the second single crystal piezoelectric layer 20 (it should be understood that the electromechanical coupling coefficient is positively correlated with the thickness ratio of the first single crystal piezoelectric layer and the second single crystal piezoelectric layer, that is, when only the thickness ratio of the first single crystal piezoelectric layer and the second single crystal piezoelectric layer is changed, the electromechanical coupling coefficient is correspondingly increased, and vice versa. Thus, the electromechanical coupling coefficient of the resonator can be adjusted by changing the thickness ratio of the first single crystal piezoelectric layer 50 and the second single crystal piezoelectric layer 20 until it is adjusted to a target value. In other embodiments, the positions of the first single crystal piezoelectric layer 50 and the second single crystal piezoelectric layer 20 can be changed, that is, the multilayer single crystal piezoelectric layer includes a second single crystal piezoelectric layer and a first single crystal piezoelectric layer stacked on the lower electrode in sequence, and at this time, the electromechanical coupling coefficient of the resonator can still show a trend of positive correlation with the thickness ratio of the first single crystal piezoelectric layer and the second single crystal piezoelectric layer.
In addition, in other embodiments, the multilayer single crystal piezoelectric layer may further include at least one third single crystal piezoelectric layer stacked between the first single crystal piezoelectric layer 50 and the second single crystal piezoelectric layer 20, and in this embodiment, the electromechanical coupling coefficient of the resonator remains the same trend as in the previous embodiment.
Referring to fig. 14, a supporting layer 70 is further disposed between the lower electrode 60 and the substrate 11, and an air cavity 110 is disposed on a side of the supporting layer 70 close to the lower electrode 60, and the air cavity 110 is located in the effective working area, so that the air cavity 110 can be used as a reflection boundary, and the performance of the resonator can be further improved.
With reference to fig. 14, a first transition layer and a second transition layer are further disposed between the support layer 70 and the substrate 11, and the lower electrode 60 and the upper electrode 100 are formed by deposition after forming the composite piezoelectric layer by bonding, so that temperature limitation of the lower electrode 60 and the upper electrode 100 (the temperature of the growth environment of the single crystal piezoelectric layer is high, which is easy to cause oxidation failure of the electrode metal) can be avoided, and a high-quality single crystal piezoelectric layer can be conveniently formed by epitaxy. In one embodiment, as shown in fig. 14, the first transition layer includes a first buffer layer 42 and a first bonding layer 80 sequentially stacked on the support layer 70, and the second transition layer includes a second buffer layer 43 and a second bonding layer 81 sequentially stacked on the substrate 11, and the first bonding layer 80 and the second bonding layer 81 are bonded to realize the preparation of the resonator. In one embodiment, as shown in fig. 15, the first transition layer includes a first buffer layer 42 disposed on the support layer 70, the second transition layer includes a second buffer layer 43 disposed on the substrate 11, and the preparation of the resonator is achieved by direct bonding of the first buffer layer 42 and the second buffer layer 43.
In another aspect of the embodiments of the present application, there is provided a method for manufacturing a resonator, as shown in fig. 1, the method including:
s010: a substrate is provided.
S020: and manufacturing a lower electrode, a composite piezoelectric layer and an upper electrode which are sequentially stacked on the substrate, wherein the composite piezoelectric layer is internally provided with a plurality of temperature compensation blocks which are mutually spaced, and the plurality of temperature compensation blocks are distributed in a plane vertical to the stacking direction and are positioned in an effective working area of the resonator.
As shown in fig. 14, when disposed, the plurality of temperature compensation blocks 40 are located in the effective operating region, and since the plurality of temperature compensation blocks 40 are distributed in a plane perpendicular to the stacking direction (in conjunction with fig. 3 and 14), i.e., laterally distributed, a range in which the effective operating region is temperature compensated can be secured, thereby having a good temperature compensation capability. On this basis, a plurality of temperature compensation piece 40 adopt spaced mode to distribute each other, so still be the material of compound piezoelectric layer between arbitrary two adjacent temperature compensation piece 40, so, just can keep normal electric property in the region between arbitrary two adjacent temperature compensation piece 40, thereby realize when guaranteeing the temperature compensation scope, compare in the current mode of directly covering effective working area through continuous whole layer temperature compensation layer, this application can show the continuous coverage area that reduces monomer temperature compensation piece 40 to effective working area, thereby reduce the influence that causes the resonator electrical property because of setting up the temperature compensation structure.
When the lower electrode 60, the composite piezoelectric layer, and the upper electrode 100 are sequentially stacked on the substrate 11, at least two processes can be performed:
one of which is: a lower electrode 60 is directly deposited on the substrate 11, a composite piezoelectric layer having a plurality of temperature compensation blocks 40 is then formed on the lower electrode 60, and an upper electrode 100 is then deposited on the composite piezoelectric layer.
The other one is as follows: as shown in fig. 2, a temporary substrate 10 is provided; then as in fig. 2 to 5, a composite piezoelectric layer having a plurality of temperature compensation blocks 40 is formed on the temporary substrate 10; next, as shown in fig. 6 to 8, a lower electrode 60 and a support layer 70 are sequentially deposited on the composite piezoelectric layer, so as to obtain a prefabricated device. As shown in fig. 9 to 11, the side of the prefabricated device having the support layer 70 is disposed on the substrate 11 through a bonding process; as shown in fig. 12, the temporary substrate 10 is removed to expose the composite piezoelectric layer; as shown in fig. 13 to 14, an upper electrode 100 is deposited on the composite piezoelectric layer. Through the manufacturing process, the manufacturing steps of the lower electrode 60 and the upper electrode 100 are both performed after the composite piezoelectric layer, so that the composite piezoelectric layer made of single crystal materials can be deposited at high temperature, and the performance of the device can be further improved.
As shown in fig. 2 to 5, forming the composite piezoelectric layer on the temporary substrate 10 includes: as shown in fig. 2 and 3, a second single crystal piezoelectric layer 20 is grown on a temporary substrate 10, and then a plurality of mutually spaced grooves 30 are formed on the second single crystal piezoelectric layer 20 by etching, the grooves 30 being distributed in a plane perpendicular to the stacking direction and being located in an effective working area of the resonator. As shown in fig. 4, each of the recesses 30 is filled with a temperature compensation block 40, and may be subjected to a planarization process, so as to improve the quality of the subsequent first single crystal piezoelectric layer 50. As shown in fig. 5, a first single crystalline piezoelectric layer 50 is grown on a second single crystalline piezoelectric layer 20 having a temperature compensation block 40, thereby obtaining a composite piezoelectric layer having a plurality of temperature compensation blocks 40.
As shown in fig. 6, a metal is then deposited on the surface of the first single crystal piezoelectric layer 50 facing away from the second single crystal piezoelectric layer 20, and patterned to form a lower electrode 60. As shown in fig. 7, a sacrificial layer 41 is formed on the lower electrode 60 to facilitate the formation of a subsequent air cavity 110. As shown in fig. 8, the entire support layer 70 and the first buffer layer 42 are continuously formed on the sacrificial layer 41, and the surface of the first buffer layer 42 is planarized, so as to improve the bonding quality. As shown in fig. 9, to facilitate bonding, a first bonding layer 80 is formed on the first buffer layer 42, and the area of bonding is controlled by patterning. As shown in fig. 10 and 11, a second buffer layer 43 and a second bonding layer 81 are formed on a substrate 11, and then a first bonding layer 80 and the second bonding layer 81 are bonded, thereby disposing a prefabricated device on the substrate 11. As shown in fig. 12, the temporary substrate 10 is removed to expose the second single crystal piezoelectric layer 20, and an exit hole 90 penetrating through the composite piezoelectric layer is formed by etching, as shown in fig. 13, a metal is deposited on the second single crystal piezoelectric layer 20 having the exit hole 90, and two parts separated from each other are formed by patterning, one part is used as an upper electrode 100, and the other part is located in the exit hole 90 and used as an exit electrode 91, so that the lower electrode 60 is led out through the exit electrode 91, thereby facilitating the external connection of the subsequent package. As shown in fig. 14, a via hole penetrating to the sacrificial layer 41 is formed by etching on a side surface of the upper electrode 100 facing away from the lower electrode 60, and the sacrificial layer 41 is released through the via hole to form an air cavity 110 between the lower electrode 60 and the support layer 70.
As shown in fig. 17, forming the composite piezoelectric layer on the temporary substrate 10 includes: growing a second single crystal piezoelectric layer 20 and a first single crystal piezoelectric layer 50 in sequence on the temporary substrate 10; then, forming a plurality of mutually spaced grooves on the side of the first single crystal piezoelectric layer 50 away from the second single crystal piezoelectric layer 20 by etching, wherein the grooves are distributed in a plane vertical to the stacking direction and are positioned in an effective working area of the resonator; each recess is then filled with a temperature compensation block 40, resulting in the resonator structure shown in fig. 17.
The shape of the recess 30 (temperature compensation block 40) in plan view is not limited to the quadrangle shown in fig. 3, and may be a pattern composed of several straight lines, or a pattern composed of several curved lines, or a pattern of a circle, an ellipse, or a combination of a plurality of curved lines and straight lines, and the shape of all the recesses 30 (temperature compensation blocks 40) is not limited to be uniform, and may be a mixture of the aforementioned various patterns. Also, the region where the groove 30 (temperature compensation block 40) is located must include the effective operation region of the resonator, but is not limited to this effective operation region. Also, the depth of the recess 30 (the height of the temperature compensation block 40) may be the depth of the single crystal piezoelectric layer of the entire layer, or may be etched only to a partial depth. Moreover, the grooves 30 (temperature compensation blocks 40) may be arranged regularly or irregularly.
In one embodiment, the temporary base 10 may be a silicon substrate 11, a silicon oxide substrate 11, a sapphire substrate 11, a silicon carbide substrate 11, or the like.
In one embodiment, the first single crystal piezoelectric layer 50 and/or the second single crystal piezoelectric layer 20 can be AlN, scAlN, or the like.
In one embodiment, the material of the lower electrode 60 may be one or more of Mo, al, pt, and Au.
In one embodiment, the material of the sacrificial layer 41 may be SiO 2 PSG, BPSG, etc.
In one embodiment, the support layer 70 may be AlN, si, al 2 O 3 SiC, and the like.
In one embodiment, the first buffer layer 42 and/or the second buffer layer 43 are made of SiO 2 And so on.
In one embodiment, the material of the first bonding layer 80 and/or the second bonding layer 81 is Au or the like.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. A resonator, comprising: the temperature compensation device comprises a substrate, and a lower electrode, a composite piezoelectric layer and an upper electrode which are sequentially stacked on the substrate, wherein a plurality of temperature compensation blocks which are mutually spaced are arranged in the composite piezoelectric layer, and the temperature compensation blocks are distributed in a plane vertical to the stacking direction and are positioned in an effective working area of the resonator.
2. The resonator of claim 1, wherein the composite piezoelectric layer comprises a plurality of single crystal piezoelectric layers sequentially stacked on the lower electrode, and a plurality of the temperature compensation blocks are each located in any one of the plurality of single crystal piezoelectric layers.
3. The resonator of claim 2, wherein the plurality of single crystal piezoelectric layers comprises at least a first single crystal piezoelectric layer and a second single crystal piezoelectric layer in a stacked arrangement, a doping concentration of the first single crystal piezoelectric layer is greater than a doping concentration of the second single crystal piezoelectric layer, and an electromechanical coupling coefficient of the resonator is positively correlated with the doping concentration of the first single crystal piezoelectric layer; or the multilayer single crystal piezoelectric layer at least comprises a first single crystal piezoelectric layer and a second single crystal piezoelectric layer which are stacked, the doping concentration of the first single crystal piezoelectric layer is greater than that of the second single crystal piezoelectric layer, and the electromechanical coupling coefficient of the resonator is positively correlated with the thickness ratio of the first single crystal piezoelectric layer to the second single crystal piezoelectric layer.
4. The resonator according to any of claims 1 to 3, wherein a support layer is further provided between the lower electrode and the substrate, and an air cavity is provided on a side of the support layer adjacent to the lower electrode.
5. The resonator of claim 4, wherein a first transition layer and a second transition layer are further provided between the support layer and the substrate bonded to each other.
6. A method of making a resonator, the method comprising:
providing a substrate;
and manufacturing a lower electrode, a composite piezoelectric layer and an upper electrode which are sequentially stacked on the substrate, wherein the composite piezoelectric layer is internally provided with a plurality of temperature compensation blocks which are spaced from each other, and the plurality of temperature compensation blocks are distributed in a plane vertical to the stacking direction and are positioned in an effective working area of the resonator.
7. The method for manufacturing the resonator according to claim 6, wherein the manufacturing of the sequentially stacked lower electrode, composite piezoelectric layer, and upper electrode on the substrate comprises:
providing a temporary substrate;
forming a composite piezoelectric layer on the temporary substrate;
sequentially depositing a lower electrode and a supporting layer on the composite piezoelectric layer to obtain a prefabricated device;
arranging one side of the prefabricated device with the supporting layer on the substrate through a bonding process;
removing the temporary substrate to expose the composite piezoelectric layer;
and depositing an upper electrode on the composite piezoelectric layer.
8. The resonator fabricating method of claim 7, wherein the forming a composite piezoelectric layer on the temporary substrate comprises:
growing a second single crystal piezoelectric layer on the temporary substrate;
forming a plurality of mutually spaced grooves on the second single crystal piezoelectric layer by etching, wherein the grooves are distributed in a plane vertical to the stacking direction and are positioned in an effective working area of the resonator;
a temperature compensation block is filled in each groove;
growing a first single crystal piezoelectric layer on a second single crystal piezoelectric layer having the temperature compensation block.
9. The resonator fabricating method of claim 7, wherein the forming a composite piezoelectric layer on the temporary substrate comprises:
growing a second single crystal piezoelectric layer and a first single crystal piezoelectric layer on the temporary substrate in sequence;
forming a plurality of grooves which are spaced from each other on one side of the first single crystal piezoelectric layer, which is far away from the second single crystal piezoelectric layer, by etching, wherein the grooves are distributed in a plane vertical to the stacking direction and are positioned in an effective working area of the resonator;
and a temperature compensation block is filled in each groove.
10. The resonator manufacturing method according to claim 6, wherein the multilayer single crystal piezoelectric layer includes at least a first single crystal piezoelectric layer and a second single crystal piezoelectric layer which are stacked, a doping concentration of the first single crystal piezoelectric layer is larger than a doping concentration of the second single crystal piezoelectric layer, and an electromechanical coupling coefficient of the resonator is positively correlated with the doping concentration of the first single crystal piezoelectric layer; or, the multilayer single crystal piezoelectric layer at least comprises a first single crystal piezoelectric layer and a second single crystal piezoelectric layer which are stacked, the doping concentration of the first single crystal piezoelectric layer is greater than that of the second single crystal piezoelectric layer, and the electromechanical coupling coefficient of the resonator is positively correlated with the thickness ratio of the first single crystal piezoelectric layer to the second single crystal piezoelectric layer.
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