CN115295657A - Light conversion film and preparation method and application thereof - Google Patents
Light conversion film and preparation method and application thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Abstract
The invention provides a light conversion film and a preparation method and application thereof. The light conversion film comprises a polymer base film and a lead-free perovskite material dispersed in the polymer base film; the lead-free perovskite material is a lead-free perovskite quantum dot material or a lead-free perovskite bulk phase material. The light conversion film provided by the invention has higher light conversion efficiency, can absorb ultraviolet light and convert the ultraviolet light into visible light, simultaneously replaces the function of an ultraviolet cut-off agent, and has good processing performance and strong weather resistance.
Description
Technical Field
The invention belongs to the technical field of film materials, and particularly relates to a light conversion film, and a preparation method and application thereof.
Background
Sunlight is an inexhaustible clean energy, and has been paid full attention in recent years, and solar photovoltaic cells have been produced and developed rapidly. With the continuous advance of the dual-carbon target, how to realize carbon neutralization and realize good coexistence of human beings and the environment is one of the major problems facing the current society, researchers are gradually invested in the development of clean energy, and the development of solar cells is further increased.
However, the current solar cell still has limitations in the application process, and the commonly used solar cell mainly uses a crystalline silicon cell, but the crystalline silicon cell has weak absorption intensity in an ultraviolet light region, and cannot effectively utilize sunlight; simultaneously, most solar cell is single glass assembly or dual glass assembly, and the application form is comparatively fixed, and is not enough to external environment's adaptability, therefore its service environment is also restricted.
In addition, the crystalline silicon cell still faces the following problems during the use process: the first aspect is that the conversion efficiency of the ultraviolet light region is low; the second aspect is that most of the materials with light conversion effect are expensive in cost, poor in environmental tolerance and incapable of bearing long-time outdoor irradiation; the third aspect is that the common single-glass double-glass battery is mostly used in areas with stable environment such as ground base stations, and the flexible battery is mostly a copper indium gallium selenide battery, but the conversion efficiency is low.
Therefore, there is a need in the art to develop a solar cell that has high conversion efficiency of ultraviolet light, is applicable to various outdoor environments, is inexpensive, and has good structural stability.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a light conversion film and a preparation method and application thereof. The light conversion film provided by the invention has higher light conversion efficiency, can absorb ultraviolet light and convert the ultraviolet light into visible light, simultaneously replaces the function of an ultraviolet cut-off agent, and has good processing performance and strong weather resistance.
In order to achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, the present invention provides a light conversion film comprising a polymer-based film and a lead-free perovskite material dispersed in the polymer-based film;
the lead-free perovskite material is a lead-free perovskite quantum dot material or a lead-free perovskite bulk phase material.
According to the invention, the lead-free perovskite material is added into the polymer base film, so that the light conversion of an ultraviolet light region can be realized, the ultraviolet light region is converted into visible light which can be absorbed by a solar cell material more easily, and the utilization rate of sunlight is further improved; meanwhile, the lead-free perovskite material can replace an ultraviolet cut-off agent material, so that the aging of a battery material can be effectively prevented, and the cost of the material can be reduced.
Preferably, the lead-free perovskite material comprises Cs 3 Cu 2 X 5 Material and/or CsCu 2 X 3 The material is any one or combination of at least two of I, br or Cl, such as Cs 3 Cu 2 Br 5 、Cs 3 Cu 2 I 5 、CsCu 2 Br 3 、CsCu 2 I 3 Or Cs 3 Cu 2 Br 3 I 2 。
Compared with the traditional lead-containing perovskite material, the lead-free perovskite material is added, so that the conversion efficiency of the light conversion film can be improved, and the environment-friendly effect is achieved.
Preferably, the lead-free perovskite material is contained in the light conversion thin film in an amount of 0.1 to 5% by mass, preferably 0.5 to 1.5% by mass, and may be, for example, 0.1%, 0.2%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, 1%, 1.1%, 1.2%, 1.3%, 1.4%, 1.5%, 1.8%, 2%, 2.2%, 2.5%, 2.8%, 3%, 3.2%, 3.5%, 3.8%, 4%, 4.2%, 4.5%, 4.8%, 5%.
In the invention, the mass percentage of the lead-free perovskite material in the light conversion film is adjusted, when the content is too low, the absorption and conversion effects of the perovskite material are not obvious, effective ultraviolet interception cannot be realized, the material is easy to age and lose efficacy, and ultraviolet light cannot be effectively converted into visible light, so that the efficiency is not obviously improved or has no effect; if the content is too high, the film tends to be hard and brittle, and the film is not satisfactory in processing effect, and at the same time, the haze of the film increases, the transmittance decreases, and the visible light region is blocked.
Preferably, the polymer-based film comprises a polyvinylidene fluoride-based film and/or an ethylene-tetrafluoroethylene copolymer-based film, preferably an ethylene-tetrafluoroethylene copolymer-based film.
In the present invention, the ethylene-tetrafluoroethylene copolymer-based film has advantages of good weather resistance and chemical resistance.
Preferably, the light conversion film further includes an additive material.
In the invention, by adding the additive material, the film can be used for directionally improving certain parameter performances of the base film, such as the melting point and the tensile strength of the film can be improved by PVDF, the transmittance of the film can be improved by PMMA, and the like. .
Preferably, the additive material comprises any one of PVDF, ETFE, PMMA or PFA or a combination of at least two thereof.
The thickness of the light conversion film is preferably 5 to 200. Mu.m, preferably 20 to 40 μm, and may be, for example, 5 μm, 10 μm, 20 μm, 22 μm, 25 μm, 28 μm, 30 μm, 32 μm, 35 μm, 38 μm, 40 μm, 50 μm, 80 μm, 100 μm, 120 μm, 150 μm, 180 μm, or 200 μm.
In the present invention, the thickness of the light conversion film is adjusted to be within a suitable range, so that the light conversion film has the advantage of good light conversion efficiency.
In a second aspect, the present invention provides a method of preparing the light conversion film according to the first aspect, the method comprising the steps of:
and mixing and granulating the polymer, the lead-free perovskite material and the additive material to obtain a precursor material, then extruding and casting the precursor material, cooling and rewinding to obtain the light conversion film.
Preferably, the extrusion temperature is 150-300 ℃, preferably 170-240 ℃, for example can be 150 ℃,160 ℃, 170 ℃, 180 ℃, 190 ℃, 200 ℃, 210 ℃, 220 ℃, 230 ℃, 240 ℃, 250 ℃, 260 ℃, 270 ℃, 280 ℃, 290 ℃, 300 ℃.
Preferably, the cooling temperature is-5 to 0 ℃, for example, -5 ℃, -2 ℃, -1 ℃, 0 ℃.
In a third aspect, the present disclosure provides a transparent front plane layer comprising the light conversion film according to the first aspect.
In a fourth aspect, the invention provides a solar cell, which comprises a transparent front plate layer, a packaging adhesive film layer, a solar cell layer, a packaging adhesive film layer and a back plate layer, which are sequentially arranged from top to bottom, wherein the transparent front plate layer is the transparent front plate layer according to the third aspect.
As a preferable technical scheme of the present invention, the bending resistance of the flexible solar cell is further improved by disposing the composite glass fiber layer between the transparent front sheet layer and the solar cell layer.
Preferably, the material of the encapsulating adhesive film layer comprises any one of PVB, POE or EVA, and is preferably PVB.
Preferably, the material of the backsheet layer comprises a TPT, TPC or CPC backsheet.
Preferably, the solar cell comprises a crystalline silicon cell, a chromium telluride cell, a copper indium gallium selenide cell or a perovskite cell, preferably a crystalline silicon cell.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a light conversion film, which can realize light conversion of an ultraviolet light region by adding a lead-free perovskite material in a polymer base film, so that the light conversion can be converted into visible light which can be absorbed by a solar cell material more easily, and the utilization rate of sunlight is further improved; meanwhile, the lead-free perovskite material can replace an ultraviolet cut-off agent material, so that the aging of a battery material is effectively prevented, and the cost of the material can be reduced;
the preparation method provided by the invention is simple to operate, does not need to add extra process steps, and has strong repeated stability.
Drawings
FIG. 1 shows Cs in a light conversion film in example 3 3 Cu 2 I 5 Fluorescence excitation/emission spectra of bulk materials;
fig. 2 is a schematic structural diagram of a solar cell provided in application example 1, wherein 1-a transparent front plate layer, 2-an encapsulating adhesive layer, 3-a solar cell layer, 4-an encapsulating adhesive layer, and 5-a back plate layer.
Detailed Description
The technical solution of the present invention is further explained by combining the drawings and the detailed description. It should be understood by those skilled in the art that the examples are only for the understanding of the present invention and should not be construed as the specific limitations of the present invention.
Example 1
This example provides a light conversion film having a thickness of 25 μm, comprising a base film of ethylene-tetrafluoroethylene copolymer, cs dispersed in the base film of ethylene-tetrafluoroethylene copolymer 3 Cu 2 Cl 5 Bulk phase material and PMMA.
The preparation method of the light conversion film comprises the following steps:
94g of an ethylene-tetrafluoroethylene copolymer and 1g of Cs 3 Cu 2 Cl 5 And 5g of PMMA is mixed and granulated to obtain a precursor material, then the precursor material is added into a screw extruder for extrusion, the temperature is raised to 200 ℃, the mixture is subjected to melt casting extrusion to a flat die for film forming, the film is cooled to room temperature and is subjected to vacuum drying, and the light conversion film is obtained after rewinding.
Example 2
This example provides a light conversion film having a thickness of 25 μm, comprising a base film of ethylene-tetrafluoroethylene copolymer, cs dispersed in the base film of ethylene-tetrafluoroethylene copolymer 3 Cu 2 Br 5 Bulk phase material and PVDF.
The preparation method of the light conversion film comprises the following steps:
94g of an ethylene-tetrafluoroethylene copolymer and 1g of Cs 3 Cu 2 Br 5 And 5g of PVDF are mixed and granulated to obtain a precursor material, then the precursor material is added into a screw extruder for extrusion, the temperature is raised to 200 ℃, the mixture is subjected to melt tape casting extrusion to a flat die for film formation, the film is cooled to room temperature and is subjected to vacuum drying, and the light conversion film is obtained after rewinding.
Example 3
The embodiment providesA light conversion film with the thickness of 25 mu m, wherein the light conversion film comprises a polyvinylidene fluoride basement membrane and Cs dispersed in the polyvinylidene fluoride basement membrane 3 Cu 2 I 5 Bulk phase material and ETFE.
The preparation method of the light conversion film comprises the following steps:
85g of polyvinylidene fluoride and 1g of Cs 3 Cu 2 I 5 And 10g of ETFE, mixing and granulating to obtain a precursor material, adding the precursor material into a screw extruder for extrusion, heating to 200 ℃, performing melt casting extrusion to a flat die to form a film, cooling to room temperature, performing vacuum drying, and rewinding to obtain the light conversion film.
FIG. 1 shows Cs 3 Cu 2 I 5 Can also be understood as the absorption emission curve of the light conversion film, PLE (i.e. Cs) 3 Cu 2 I 5 Absorption curves of quantum dots, PL being Cs 3 Cu 2 I 5 The emission curve of the quantum dots is obviously shown by adding Cs 3 Cu 2 I 5 The quantum dot light conversion film can convert an ultraviolet light region spectrum which is difficult to absorb by a solar cell into a blue light region spectrum which is better corresponding to the cell, and in addition, the ultraviolet light in sunlight can be filtered through the light conversion process, so that the material is prevented from aging, and simultaneously, the ultraviolet light is converted into visible light for the cell to absorb, and the utilization rate of energy is improved.
Example 4
This example provides a light conversion film having a thickness of 25 μm comprising an ethylene-tetrafluoroethylene copolymer based film, csCu dispersed in the ethylene-tetrafluoroethylene copolymer based film 2 Cl 3 Quantum dot materials, and PMMA.
The preparation method of the light conversion film comprises the following steps:
94g of an ethylene-tetrafluoroethylene copolymer, 5mL of CsCu 2 Cl 3 Mixing the n-hexane solution (the total solid content is 1 g) and 5g of PMMA (polymethyl methacrylate) and granulating to obtain a precursor material, then adding the precursor material into a screw extruder for extrusion, heating to 200 ℃, and performing melt casting extrusion until the precursor material is flatAnd forming a film in the mold, cooling to room temperature, drying in vacuum, and rewinding to obtain the light conversion film.
Example 5
This example provides a light conversion film having a thickness of 25 μm, comprising an ethylene-tetrafluoroethylene copolymer-based film, csCu dispersed in the ethylene-tetrafluoroethylene copolymer-based film 2 I 3 Bulk phase material and PMMA.
The preparation method of the light conversion film comprises the following steps:
94g of an ethylene-tetrafluoroethylene copolymer, 1g of CsCu 2 I 3 And 5g of PMMA are mixed and granulated to obtain a precursor material, then the precursor material is added into a screw extruder for extrusion, the temperature is raised to 200 ℃, the precursor material is subjected to melt tape casting extrusion to a flat die for film formation, the film is cooled to room temperature and is dried in vacuum, and the light conversion film is obtained after rewinding.
Example 6
This example differs from example 1 in that it provides a light conversion film having a thickness of 25 μm comprising a base film of ethylene-tetrafluoroethylene copolymer, cs dispersed in the base film of ethylene-tetrafluoroethylene copolymer 3 Cu 2 Cl 5 Bulk phase material and PMMA. Wherein the film comprises a base film of ethylene-tetrafluoroethylene copolymer, and Cs dispersed in the base film of ethylene-tetrafluoroethylene copolymer 3 Cu 2 Cl 5 The bulk material and PMMA had masses of 94.5g, 0.5g, and 5g, respectively, all of which were the same as in example 1.
Example 7
This example differs from example 1 in that it provides a light conversion film having a thickness of 25um comprising a base film of ethylene-tetrafluoroethylene copolymer, cs dispersed in the base film of ethylene-tetrafluoroethylene copolymer 3 Cu 2 Cl 5 Bulk phase material and PMMA. Wherein the film comprises a base film of ethylene-tetrafluoroethylene copolymer, and Cs dispersed in the base film of ethylene-tetrafluoroethylene copolymer 3 Cu 2 Cl 5 The mass of the bulk material and PMMA was 93.5g, 1 respectively.5g, the others being the same as in example 1
Example 8
This example provides a light conversion film having a thickness of 25 μm, comprising a base film of ethylene-tetrafluoroethylene copolymer, cs dispersed in the base film of ethylene-tetrafluoroethylene copolymer 3 Cu 2 Cl 5 Bulk phase material and PMMA.
The preparation method of the light conversion film comprises the following steps:
94.9g of an ethylene-tetrafluoroethylene copolymer, 0.1g of Cs 3 Cu 2 Cl 5 And 5g of PMMA are mixed and granulated to obtain a precursor material, then the precursor material is added into a screw extruder for extrusion, the temperature is raised to 150 ℃, the precursor material is subjected to melt tape casting extrusion to a flat die for film formation, the film is cooled to room temperature and is dried in vacuum, and the light conversion film is obtained after rewinding.
Example 9
This example provides a light conversion film having a thickness of 25 μm, comprising a base film of ethylene-tetrafluoroethylene copolymer, cs dispersed in the base film of ethylene-tetrafluoroethylene copolymer 3 Cu 2 Cl 5 Bulk phase material and PMMA.
The preparation method of the light conversion film comprises the following steps:
90g of an ethylene-tetrafluoroethylene copolymer and 5g of Cs 3 Cu 2 Cl 5 And 5g of PMMA are mixed and granulated to obtain a precursor material, then the precursor material is added into a screw extruder for extrusion, the temperature is increased to 300 ℃, the precursor material is subjected to melt tape casting extrusion to a flat die for film formation, the film is cooled to room temperature and is dried in vacuum, and the light conversion film is obtained after rewinding.
Example 10
This example is different from example 1 in that Cs is contained in the light conversion film 3 Cu 2 Cl 5 The mass percentage of the bulk phase material was 0.05%, and the rest was the same as in example 1.
Example 11
This example is different from example 1 in that Cs is contained in the light conversion film 3 Cu 2 Cl 5 The mass percentage of the bulk phase material was 10%, and the other points were the same as in example 1.
Comparative example 1
This comparative example is different from example 1 in that the perovskite material and the ultraviolet cut-off material were not added to the synthesized thin film, and only 94g of etfe was mixed with 5g of pmma to prepare the same thin film, and the rest was the same as example 1.
Application examples 1 to 11 and comparative application example 1
The light conversion films provided in examples 1 to 11 and comparative application example 1 were prepared into flexible solar cells by the following method:
sequentially stacking an encapsulating adhesive film layer, a solar cell layer, an encapsulating adhesive film layer and a light conversion film on a back plate; and vacuumizing, heating and laminating to obtain the flexible solar cell.
Test conditions
The flexible solar cells prepared in application examples 1 to 11 and comparative application example 1 were subjected to performance testing, the testing method being as follows:
the prepared light conversion film is applied to a flexible solar cell, as shown in fig. 2, a light conversion film layer, a transparent PVB layer, a crystalline silicon solar cell layer, a transparent PVB layer and a back plate layer are sequentially arranged from top to bottom, vacuumizing is carried out for 10min at 160 ℃, then lamination is carried out for 10min under 50KPa pressure, and a packaged flexible solar cell component is obtained and the light conversion efficiency and the UV60 aging performance of the packaged flexible solar cell component are tested.
The test results are shown in table 1:
table 1:
as can be seen from the data in table 1, the perovskite material has significant absorption in the ultraviolet region, and can replace the function of an ultraviolet cut-off agent, thereby preventing the aging and yellowing of the thin film and the reduction of the cell efficiency.
When the addition amount of the perovskite in the thin film is too low (< 0.1%), the perovskite cannot completely replace the action of the ultraviolet cut-off agent, the thin film is aged, the efficiency of the battery is reduced, and no obvious gain effect is generated on the battery due to too little converted ultraviolet light; when the addition amount is too high (> 5%), the addition concentration is too high, which causes blocking of the visible light region spectrum and decreases the initial light conversion efficiency.
When the mass percentage of the lead-free perovskite material in the light conversion film is within the range of 0.1-5%, the battery efficiency can be obviously improved, the battery material is fully protected and prevented from aging caused by ultraviolet, and after the addition amount is further optimized, the light conversion efficiency can be further optimized. Compared with a lead-containing perovskite material, the light conversion film provided by the application has the advantages of environmental protection.
The applicant states that the present invention is illustrated by the above examples of the process of the present invention, but the present invention is not limited to the above process steps, i.e. it is not meant that the present invention must rely on the above process steps to be carried out. It will be apparent to those skilled in the art that any modification of the present invention, equivalent substitutions of selected materials and additions of auxiliary components, selection of specific modes and the like, which are within the scope and disclosure of the present invention, are contemplated by the present invention.
Claims (10)
1. A light conversion film, characterized in that the light conversion film comprises a polymer-based film and a lead-free perovskite material dispersed in the polymer-based film;
the lead-free perovskite material is a lead-free perovskite quantum dot material or a lead-free perovskite bulk phase material.
2. The light conversion film of claim 1, wherein the lead-free perovskite material comprises Cs 3 Cu 2 X 5 Material and/or CsCu 2 X 3 A material, wherein X is selected from any one or at least two of I, br or ClA combination of species;
preferably, the lead-free perovskite material in the light conversion film is 0.1-5% by mass, preferably 0.5-1.5%.
3. A light conversion film according to claim 1 or 2, characterized in that said polymer based film comprises a polyvinylidene fluoride based film and/or an ethylene-tetrafluoroethylene copolymer based film, preferably an ethylene-tetrafluoroethylene copolymer based film.
4. The light conversion film according to any one of claims 1 to 3, further comprising an additive material;
preferably, the additive material comprises any one of PVDF, ETFE, PMMA or PFA or a combination of at least two thereof.
5. A light conversion film according to any of claims 1 to 4, wherein the thickness of the light conversion film is 5 to 200 μm, preferably 20 to 40 μm.
6. A method of producing the light conversion film according to any one of claims 1 to 5, comprising the steps of:
and mixing and granulating the polymer, the lead-free perovskite material and the additive material to obtain a precursor material, then extruding and casting the precursor material, cooling and rewinding to obtain the light conversion film.
7. The method according to claim 6, wherein the temperature of the extrusion is 150 to 300 ℃, preferably 170 to 240 ℃.
8. The method according to claim 6 or 7, wherein the temperature of the cooling is-5 to 0 ℃.
9. A transparent front plane layer, characterized in that it comprises a light conversion film according to any of claims 1-5.
10. A solar cell, which is characterized by comprising a transparent front plate layer, an encapsulation adhesive film layer, a solar cell layer, an encapsulation adhesive film layer and a back plate layer which are sequentially arranged from top to bottom, wherein the transparent front plate layer is the transparent front plate layer according to claim 9;
preferably, the material of the encapsulating adhesive film layer comprises any one of PVB, POE or EVA, preferably PVB;
preferably, the material of the backsheet layer comprises a TPT, TPC or CPC backsheet;
preferably, the solar cell comprises a crystalline silicon cell, a chromium telluride cell, a copper indium gallium selenide cell or a perovskite cell, preferably a crystalline silicon cell.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210757939.7A CN115295657A (en) | 2022-06-29 | 2022-06-29 | Light conversion film and preparation method and application thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210757939.7A CN115295657A (en) | 2022-06-29 | 2022-06-29 | Light conversion film and preparation method and application thereof |
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| CN202210757939.7A Pending CN115295657A (en) | 2022-06-29 | 2022-06-29 | Light conversion film and preparation method and application thereof |
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