CN109795177A - A kind of band turns application of the photoresist diaphragm in photovoltaic cell laying structure - Google Patents
A kind of band turns application of the photoresist diaphragm in photovoltaic cell laying structure Download PDFInfo
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- CN109795177A CN109795177A CN201811615287.3A CN201811615287A CN109795177A CN 109795177 A CN109795177 A CN 109795177A CN 201811615287 A CN201811615287 A CN 201811615287A CN 109795177 A CN109795177 A CN 109795177A
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- Y02E10/50—Photovoltaic [PV] energy
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Abstract
This application discloses a kind of bands to turn application of the photoresist diaphragm in photovoltaic cell laying structure, and it includes at least one layer of conversion layer that the band, which turns photoresist diaphragm,；The conversion layer includes at least one layer of polymer film mixed with light conversion agent.The band, which turns photoresist diaphragm, can be improved solar battery light conversion efficiency, improve battery weatherability, reduces ultraviolet light and steam to cell damage, improves the fluorescent material service life.
Description
Technical field
This application involves a kind of bands to turn photoresist diaphragm, belongs to chemical material field.
Background technique
Solar battery is also known as " solar chip " or " photocell ", is a kind of photoelectricity using the sunlight direct generation of electricity
Wafer.As long as the illumination that it is satisfied certain illumination conditions is arrived, moment output voltage and can have the case where circuit
Lower generation electric current.
For flexible solar battery since it can realize different degrees of bending and can cut by arbitrary size, producer can root
All size, shape is made according to the requirement of client.It is widely used in solar energy backpack, solar tent, solar telephone, too
On positive energy sailing boat even solar powered aircraft.
Needing thin film solar component to use outdoors when being used as constructing power station 25 years or more does not reduce delivery efficiency.
Therefore, extremely crucial for the encapsulation of flexible solar battery and protection, glass cannot be used for flexibility due to its inflexibility
The encapsulation of solar battery, it is therefore desirable to select one or more layers high light transmittance, weatherability, barrier property, pliability film
Encapsulation for flexible solar battery.
Existing common photovoltaic cell has silicon-based photovoltaic cells, cadmium telluride (CdTe) and copper indium gallium selenide (CIGS) thin-film electro
Pond and perovskite photovoltaic cell.Silicon-based photovoltaic cells are lower in ultraviolet and blue spectral range light conversion efficiency, only have
Effective photo-generated carrier can be just generated when absorbing energy and being equal to the photon of itself band gap, if absorbing energy less than itself
The photon of band gap can then transmit loss, and the incident photon for absorbing energy greater than itself band gap then can generate light induced electron in conduction band
Thermal relaxation phenomenon.Cadmium telluride (CdTe) and copper indium gallium selenide (CIGS) hull cell contain cadmium sulfide (CdS) material, although its
It is preferable to the assimilation effect of UV/blue range, but it cannot be utilized well by photovoltaic cell, so that such battery is in shortwave
Response is poor in range, and current output capability is limited.Perovskite battery is high, at low cost with stream transport factor and prepares
Simple process, although perovskite photovoltaic cell is higher in ultraviolet and blue spectral range photoelectric conversion efficiency, its is ultraviolet steady
It is qualitative poor, therefore cannot be widely used.
Realize the conversion of high-energy photon to lower energy photon in general there are two types of approach by light conversion agent: photoluminescence and
Lower conversion.The difference of the two is their fluorescence quantum efficiency LQE (number of photons for the number for the photon launched/absorbed
Mesh) it is different, the former quantum efficiency is always less than or equal to 100%, and the quantum efficiency of the latter is (every always greater than 100%
At least one photon can be launched again by absorbing a photon).Although the quantum efficiency of lower transition material is very high, it is excited
The wave-length coverage of photon be confined to the very high short wavelength region of energy (general≤200nm, vacuum ultraviolet photon VUV, in land
It is not present in the solar spectrum of ground environment), be not suitable for applied to the solar battery under terrestrial environment.
In view of the above problems, by selecting light conversion agent appropriate, and different filming technologies is used, turn finish to realize
The barrier and conversion to ultraviolet light are expected, to achieve the purpose that improve photovoltaic cell service life and light conversion ratio.
Summary of the invention
According to the one aspect of the application, provides a kind of band and turn photoresist diaphragm answering in photovoltaic cell laying structure
With the band, which turns photoresist diaphragm, can be improved solar battery light conversion efficiency, improve battery weatherability, reduce ultraviolet light and steam
To cell damage, the fluorescent material service life is improved.The band turns photoresist diaphragm applied to photovoltaic cell laying structure, plays and turns light and resistance
Every double action improve the conversion ratio of solar battery to extend the service life of solar battery.The band turns photoresist diaphragm
Whole barrier film is directly laid with other components of solar battery, is not necessarily to other operations, is easy to use.
According to the structure and feature of fluorescence material, fluorescence material can be divided into three classes: quantum dot has engine dyeing
Material, rare earth ion and its complex compound.
Perovskite quantum dot has excellent Absorption and emission spectra, and absorbable 400nm or less ultraviolet light is converted into can
It is light-exposed, and quantum efficiency is high.But perovskite quantum dot in terms of weatherability there are huge problem, perovskite quantum dot light,
Heat can occur irreversible degradation in air, and then lead to serious fluorescent quenching, not but not play after degradation and turn light
Effect, can stop the transmission of visible light instead, reduce the incident photon-to-electron conversion efficiency of solar battery, serious to hinder its and practical answer
With.
In view of the above problems, fluorescence material is packaged in inside barrier film, Ke Yiti by different filming technologies
The high fluorescent material service life improves solar battery light conversion efficiency, improves battery weatherability, reduces ultraviolet light and steam to battery
Damage.
The band turns application of the photoresist diaphragm in photovoltaic cell laying structure, which is characterized in that the band turn photoresist every
Film includes at least one layer of conversion layer；The conversion layer includes at least one layer of polymer film mixed with light conversion agent；
And it is layered at least one layer of barrier layer on the conversion layer.
Optionally, the light conversion agent is selected from least one of quantum dot, luminous organic material, rare earth phosphor.
Optionally, the luminous organic material is rhodamine B.
Optionally, the rare earth phosphor is rare earth aluminate fluorescent powder.
Optionally, the combination of the barrier layer and the conversion layer is including in vapor deposition, magnetron sputtering, adhesive bonding
At least one.
Optionally, the conversion layer with a thickness of 1~200 μm.
As an implementation, the material of the barrier layer is selected from silicon nitride, disilicon trioxide, three oxidations two
At least one of aluminium, silicon oxynitride, silicon nitride, silica.
Optionally, the barrier layer with a thickness of 1~100nm.
Optionally, it further includes at least one layer of protective layer being layered on barrier layer that the band, which turns photoresist diaphragm,.
Optionally, it is total to be selected from ethylene-tetrafluoroethylene copolymer, vinylidene fluoride-hexafluoropropene for the material of the protective layer
Polymers, Vingon, polyvinyl chloride, ethylene-vinyl alcohol copolymer, Triafol T, Kynoar, poly- terephthaldehyde
At least one of sour diethyl alcohol ester, fluoroolefins-vinyl ether co-polymer, polytetrafluoroethylene (PTFE).
Optionally, the protective layer with a thickness of 1~100 μm.
As an implementation, the band barrier conversion film further includes basement membrane.
Optionally, the basement membrane comes from barrier film；The barrier film includes basement membrane and barrier layer.
It optionally, include at least one layer of adhesive layer between the barrier level and the conversion layer of the barrier film.
As an implementation, it includes the barrier layer of stacking, mixed with light conversion agent that the band, which turns photoresist diaphragm successively,
Polymer film, barrier layer.
As an implementation, it includes the barrier layer of stacking, mixed with the poly- of quantum dot that the band, which turns photoresist diaphragm successively,
Compound film layer, barrier layer.
As an implementation, the band turns photoresist diaphragm successively and includes the protective layer of stacking, barrier layer, mixed with turning light
Polymer film, barrier layer, the protective layer of material.
As an implementation, it includes the protective layer being laminated, barrier layer, mixed with quantum that the band, which turns photoresist diaphragm successively,
Polymer film, the barrier layer, protective layer of point.
As an implementation, the band turns photoresist diaphragm, successively include stacking basement membrane, barrier layer, mixed with turn
Polymer film, barrier layer, the basement membrane of luminescent material.
As an implementation, the band turns photoresist diaphragm, successively includes the basement membrane being laminated, barrier layer, mixed with amount
Polymer film, the barrier layer, basement membrane of son point.
As an implementation, the band turns photoresist diaphragm, successively include stacking basement membrane, barrier layer, mixed with turn
Polymer film, adhesive layer, barrier layer, the basement membrane of luminescent material.
As an implementation, the band turns photoresist diaphragm, successively includes the basement membrane being laminated, barrier layer, mixed with amount
Polymer film, the adhesive layer, barrier layer, basement membrane of son point.
As an implementation, it includes the inorganic coating of stacking, mixed with light conversion agent that the band, which turns photoresist diaphragm successively,
Polymer film, inorganic coating.
As an implementation, it includes the inorganic coating of stacking, mixed with quantum dot that the band, which turns photoresist diaphragm successively,
Polymer film, inorganic coating.
As an implementation, it includes the polyvinylidene fluoride coating being laminated, inorganic plating that the band, which turns photoresist diaphragm successively,
Layer, the polymer film mixed with light conversion agent, inorganic coating.
As an implementation, it includes the polyvinylidene fluoride coating being laminated that the band, which turns photoresist diaphragm successively, inorganic
Coating, the polymer film mixed with quantum dot, inorganic coating.
As an implementation, it includes the barrier film of stacking, mixed with light conversion agent that the band, which turns photoresist diaphragm successively,
Polymer film, barrier film.
As an implementation, it includes the barrier film of stacking, mixed with the poly- of quantum dot that the band, which turns photoresist diaphragm successively,
Compound film layer, barrier film.
As an implementation, it includes the barrier film of stacking, mixed with light conversion agent that the band, which turns photoresist diaphragm successively,
Polymer film, adhesive layer, barrier film.
As an implementation, it includes the barrier film of stacking, mixed with the poly- of quantum dot that the band, which turns photoresist diaphragm successively,
Compound film layer, adhesive layer, barrier film.
As an implementation, the polymeric layer mixed with quantum dot is preferentially obtained, lower surface respectively combines one layer on it
Barrier layer (by vapor deposition, magnetron sputtering or other modes combine the inorganic matter coating of one layer of 1-100nm on surface), it is optional later
A protective layer by co-extrusion or other modes is added in lower surface on it again.
As an implementation, basement membrane and barrier layer constitute barrier film, the mixture with quantum dot or its precursor
Be coated on a quantum dot surface, with adhesive or directly another barrier film be combined to above-mentioned barrier film with mixed with quantum
Above the composite membrane of the polymer film of point, the barrier film that the band turns light is obtained.
Quantum dot can choose quantum dot in the prior art in the application, be not particularly limited.Existing perovskite amount
The quantum dots such as sub- point, Cd system quantum dot, cadmium selenide, indium phosphide, indium sulphur, carbon dots may be selected.
As an implementation, the quantum dot is perovskite quantum dot, and perovskite quantum dot is selected from AMX3、A2MX4、
A4MX6At least one of.
Optionally, the quantum dot is selected from least one of perovskite quantum dot.
Optionally, the chemical formula of the perovskite quantum dot is shown in formula I:
AMX3Formulas I
Wherein, A includes Cs+、Na+、K+, HN=CHNH3 +、R-NH3 +、Rb+、Li+、Ba2+、C(NH2)3 +At least one of；
R is selected from hydrogen, C1~C10Alkyl, C1~C10Unsaturated alkyl；
M is metal ion；The metal is selected from least one of Pb, Sn, Mn, Ge, Sb, Bi, Cu, Sr, In, Tl, Ag；
X is selected from least one of the anion of halogen.
Optionally, R is selected from hydrogen, C in Formulas I1~C4Alkyl；
X is selected from F-、Cl-、Br-、I-。
Optionally, the polymer is selected from polymethyl methacrylate, polyacrylate, ethylene-vinyl alcohol copolymer, gathers
Cellulose acetate, polyurethane resin, polyvinylidene fluoride-hexafluoropropylene copolymer, poly- ethyl silicone resin, Kynoar, ring
Oxygen resin, acrylic resin, Vingon, polyvinyl chloride, polyvinyl fluoride, methyl silicon resin, in methyl phenyl silicone resin
It is at least one.
According to the another aspect of the application, the preparation method that a kind of band turns photoresist diaphragm is provided.This method simple process is fitted
In industrialized production.
The band turns the preparation method of photoresist diaphragm, which comprises the following steps:
A1 the glue containing light conversion agent or light conversion agent presoma) is obtained；
A2 the solution film forming) is obtained into the polymer tunic mixed with light conversion agent；
A3) in two surfaces up and down of the polymer tunic mixed with light conversion agent successively compound barrier layer, protective layer
In at least one layer.
The band turns the preparation method of photoresist diaphragm, which comprises the following steps:
A1 the glue containing quantum dot or quantum dot presoma) is obtained；
A2 the solution film forming) is obtained into the polymer tunic mixed with quantum dot；
A3) two surfaces up and down of the polymer tunic mixed with quantum dot successively compound barrier layer, in protective layer
At least one layer.
Optionally, step a1) described in include at least one of polymer, polymer monomer, oligomer in glue.
Optionally, step a1) described in further include solvent, initiator, curing agent in glue.
Optionally, the polymer monomer is selected from acrylic ester monomer, at least one of methacrylate monomers.
Optionally, the initiator is in lipophilic initiator, hydrophilic initiator, photoinitiator, thermal initiator
It is at least one.Those skilled in the art select corresponding initiator according to membrance casting condition.
Optionally, the polymer monomer, oligomer, initiator, curing agent can select commercial goods as needed.
Optionally, step a2) described in the mode of film forming include casting film-forming.
Optionally, step a2) it include: by the solution coating in peelable substrate, film forming is obtained mixed with light conversion agent
Polymer tunic；Or
By the solution coating in the barrier level of barrier film, film forming obtains the polymer tunic mixed with light conversion agent；
The barrier film includes basement membrane and barrier layer.
Optionally, step a2) it include: by the solution coating in peelable substrate, film forming is obtained mixed with the poly- of quantum dot
Close nitride layer film；Or
By the solution coating in the barrier level of barrier film, film forming obtains the polymer tunic mixed with quantum dot；Institute
Stating barrier film includes basement membrane and barrier layer.
Optionally, step a3) include: by two surface recombinations up and down of the polymer tunic mixed with light conversion agent extremely
Few one layer of barrier layer；Or
In the surface recombination at least one layer barrier film of the polymer tunic mixed with light conversion agent；The resistance of the barrier film
The surface recombination in interlayer face and the polymer tunic mixed with light conversion agent.
Optionally, step a3) include: by two surface recombinations up and down of the polymer tunic mixed with quantum dot at least
One layer of barrier layer；Or
In the surface recombination at least one layer barrier film of the polymer tunic mixed with quantum dot；The barrier of the barrier film
The surface recombination of level and the polymer tunic mixed with quantum dot.
Optionally, the surface of the polymer tunic mixed with quantum dot is coated with adhesive layer, the adhesive layer surface
It is compound with the barrier level of barrier film.
Optionally, step a3) it include: that two surfaces up and down of the polymer tunic mixed with light conversion agent are successively multiple
Close barrier layer, protective layer.
Optionally, step a3) it include: that two surfaces up and down of the polymer tunic mixed with quantum dot are successively compound
Barrier layer, protective layer.
Optionally, step a3) in by the vapor deposition of two surfaces up and down of the polymer tunic mixed with light conversion agent or
Magnetic sputters composite inorganic object barrier layer.
Optionally, step a3) in by the vapor deposition of two surfaces up and down or magnetic of the polymer tunic mixed with quantum dot
Sputter composite inorganic object barrier layer.
As an implementation, mixed with the polymer film layer manufacturing method thereof of quantum dot:
1, quantum dot or quantum dot presoma；Those skilled in the art, can select as needed existing quantum dot and
Prepare the presoma of quantum dot；
2, polymer beads, polymer powder, polymer monomer, at least one of oligomer；It is polymer, monomer, low
The selection of polymers need to consider performance relevant to forming a film, performance relevant with quantum dot stability；Such as polymer molecular weight,
The functional group of polymer；
3, solvent (optional)；The selection of solvent need to dissolve polymer, and adjust the viscosity of polymer；Containing oligomer and
In the system of polymer monomer, solvent can not be added, can also realize that polymer is dissolved and uniformly mixed with quantum dot；
4, curing agent, additive (optional)；Curing agent, additive are added as needed, and can not add；
1.2.3.4 is passed through to curtain coating or other modes film-forming after mixing.
As an implementation, the band turns the preparation method of photoresist diaphragm, comprising the following steps:
A21) light conversion agent or can be formed the presoma of light conversion agent and the monomer of polymer or oligomer or
In addition several mixtures such as adds or does not add solvent and curing agent at other auxiliary agents, form mixed glue solution, mixed glue solution
It is coated on release film, dry or obtains the polymer film mixed with light conversion agent after solidifying；
A22) in above-mentioned film surface vapor deposition or the inorganic coating of magnetron sputtering and then two sides addition or one side addition or not
Add one or more layers compound protective film.
As an implementation, the band turns the preparation method of photoresist diaphragm, comprising the following steps:
A211) quantum dot or the presoma of quantum dot and the monomer of polymer or oligomer or several can be formed
Mixture, other auxiliary agents such as in addition add or do not add solvent and curing agent, form mixed glue solution, mixed glue solution coating
In release film, dries or obtain the polymer film mixed with quantum dot after solidifying；
A222) in above-mentioned film surface vapor deposition or the inorganic coating of magnetron sputtering and then two sides addition or one side addition or not
Add one or more layers compound protective film.
As an implementation, the band turns the preparation method of photoresist diaphragm, comprising the following steps:
A31) light conversion agent or can be formed the presoma of light conversion agent and the monomer of polymer or oligomer or
In addition several mixtures such as adds or does not add solvent and curing agent at other auxiliary agents, form mixed glue solution, mixed glue solution
It is coated on barrier film surface, dry or obtains the polymer mixed with quantum dot after solidifying；
A32 barrier film) is combined to the polymer film two sides mixed with light conversion agent, wherein barrier layer is in inside.Composite square
There are two types of formulas, is a kind of adhesive one is the polymer itself, and another kind is additionally to be coated with one layer of adhesive again；
A33) laying of photovoltaic cell, which can choose, directly turns photoresist diaphragm as weathering layer or above it for the band
One layer of weathering layer is added as protection.
As an implementation, the band turns the preparation method of photoresist diaphragm, comprising the following steps:
A311) quantum dot or the presoma of quantum dot and the monomer of polymer or oligomer or several can be formed
Mixture, other auxiliary agents such as in addition add or do not add solvent and curing agent, form mixed glue solution, mixed glue solution coating
In barrier film surface, dries or obtain the polymer mixed with quantum dot after solidifying；
A322 barrier film) is combined to the polymer film two sides mixed with quantum dot, wherein barrier layer is in inside.Complex method
There are two types of, it is a kind of adhesive one is the polymer itself, another kind is additionally to be coated with one layer of adhesive again；
A333) laying of photovoltaic cell, which can choose, directly turns photoresist diaphragm as weathering layer or above it for the band
One layer of weathering layer is added as protection.
According to the another aspect of the application, a kind of photovoltaic cell laying structure is provided, which improves solar battery light
Transfer efficiency improves battery weatherability, reduces ultraviolet light and steam to cell damage.The fluorescent material service life can be improved.
Optionally, the photovoltaic cell laying structure turns photoresist diaphragm including the band, is prepared according to the method
Band turn at least one of photoresist diaphragm.
As an implementation, the photovoltaic cell laying structure successively includes weathering layer, the first sealing of stacking
Layer, band turn photoresist diaphragm, the second sealant, battery chip, third sealant, backsheet layer.
As an implementation, the photovoltaic cell laying structure successively includes that band turns photoresist diaphragm, the second sealing
Layer, battery chip, third sealant, backsheet layer.
The condition of related to numberical range can be independently selected from the numberical range in the application
Any point value.
" C in the application1~C10" etc. refer both to the carbon atom number that group is included.
In the application, " alkyl " is to be formed by group by losing any one hydrogen atom on alkane compound molecule.
In the application, " alkyl " is that the group formed after a hydrogen atom on carbon atom is lost in hydrocarbon molecule.The hydrocarbon
For carbohydrate, such as alkane, alkene, alkynes are hydrocarbon.
Polymer employed in the application, such as Kynoar, polymethyl methacrylate, unless otherwise instructed,
The number-average molecular weight general control of polymer is between 10,000~1,000,000.
" band turns photoresist diaphragm " is the film with " turning light " and " barrier " performance in the application.
The beneficial effect that the application can generate includes:
1) band provided herein turns application of the photoresist diaphragm in photovoltaic cell laying structure, can effectively improve too
Positive energy battery light conversion efficiency；
2) band provided herein turns application of the photoresist diaphragm in photovoltaic cell laying structure, can effectively improve electricity
Pond weatherability reduces ultraviolet light and steam to cell damage；
3) band provided herein turns application of the photoresist diaphragm in photovoltaic cell laying structure, can effectively improve glimmering
The luminescent material service life.
Detailed description of the invention
Fig. 1 is the photovoltaic cell laying structure in embodiment 3；
Fig. 2 is that the band in embodiment 1 turns photoresist membrane configuration；
Fig. 3 is that the band in embodiment 4 turns photoresist membrane configuration；
Fig. 4 is that the band that in the case where high temperature and humidity tests environment prepared by embodiment 4 turns photoresist diaphragm and common barrier film uses the longevity
Order test result；
Fig. 5 is the fluorescence curve and transmittance curve that band prepared by embodiment 3 turns photoresist diaphragm.
Specific embodiment
The application is described in detail below with reference to embodiment, but the application is not limited to these embodiments.
Unless otherwise instructed, the raw material in embodiments herein is bought by commercial sources.
Polymethyl methacrylate is purchased from Foshan Sheng Yi Biotechnology Co., Ltd, molecular weight 100,000；
Kynoar is purchased from A Kema, molecular weight 50,000；
Ethylene-vinyl alcohol copolymer is purchased from Kuraray, molecular weight 150,000.
The application provides a kind of band and turns photoresist diaphragm, including at least one layer of conversion layer；The conversion layer includes at least one layer
Mixed with the polymer film of light conversion agent light conversion agent.
Optionally, the light conversion agent is selected from least one of quantum dot, luminous organic material, rare earth phosphor.
Optionally, the band turns photoresist diaphragm, including at least one layer of conversion layer；The conversion layer include it is at least one layer of mixed with
The polymer film of quantum dot.
Optionally, the conversion layer with a thickness of 3~200 μm.
As an implementation, the band turns photoresist diaphragm, as shown in Fig. 2, including successively the barrier layer of stacking, turning light
Layer, barrier layer.
Optionally, the material of the barrier layer is selected from silicon nitride, silica, silicon nitride, disilicon trioxide, three oxygen
Change at least one of two aluminium, silicon oxynitride.
Optionally, the barrier layer with a thickness of 1~100nm.
Optionally, it further includes at least one layer of protective layer being layered on barrier layer that the band, which turns photoresist diaphragm,.
Optionally, the material of the protective layer is selected from ethylene-tetrafluoroethylene copolymer, polyvinylidene fluoride-hexafluoropropene
Copolymer, Vingon, polyvinyl chloride, ethylene-vinyl alcohol copolymer, Triafol T, poly terephthalic acid class plastics,
At least one of fluoroolefins-vinyl ether co-polymer, polytetrafluoroethylene (PTFE).
Optionally, the protective layer with a thickness of 1~100 μm.
As an implementation, the band turns photoresist diaphragm, as shown in figure 3, successively including the basement membrane of stacking, barrier
Layer, conversion layer, barrier layer, basement membrane.
It optionally, include at least one layer of adhesive between the barrier layer and the polymer film mixed with light conversion agent
Layer.
Mixed with the polymer film of light conversion agent
Optionally, the light conversion agent is selected from quantum dot, luminous organic material, rare earth phosphor.Quantum in the application
There is no particular restriction for point, and existing perovskite quantum dot, Cd system quantum dot may be selected.As an implementation, the amount
Son point is perovskite quantum dot, and perovskite quantum dot is selected from AMX3、A2MX4、A4MX6At least one of；
Wherein, A includes Cs+、Na+、K+, HN=CHNH3 +、R-NH3 +、Rb+、Li+、Ba2+、C(NH2)3 +At least one of；
R is selected from hydrogen, C1~C10Alkyl, C1~C10Unsaturated alkyl；
M is metal ion；The metal is selected from least one of Pb, Sn, Mn, Ge, Sb, Bi, Cu, Sr, In, Tl, Ag；
X is selected from least one of the anion of halogen.
Optionally, R is selected from hydrogen, C in Formulas I1~C4Alkyl；
X is selected from F-、Cl-、Br-、I-。
Mixed with the selection of polymer in the polymer film of quantum dot in the application, the film forming of polymer need to be considered；Into
One step considers the effect of polymer and quantum dot, such as coordination anchoring effect, stabilization, peptizaiton；Further consider
The barrier water oxygen performance of polymer.As an implementation, the polymer is selected from polymethyl methacrylate, polyacrylic acid
At least one of esters, ethylene-vinyl alcohol copolymer, poly-vinegar acid cellulose.
Barrier layer
As an implementation, the barrier layer comes from barrier film, and barrier layer and basement membrane are whole barrier film, including
Organic matter substrate and inorganic matter barrier layer.The barrier film is purchased from U.S. 3M.
As an implementation, the barrier layer is vaporized on the upper and lower surface of the conversion layer；The material of the barrier layer
Material is selected from silicon nitride, disilicon trioxide, at least one of aluminum oxide, silicon oxynitride, silicon nitride, silica.
Optionally, protective layer is laminated in the surface of the barrier layer.
Optionally, the material of the protective layer is selected from ethylene-tetrafluoroethylene copolymer, and vinylidene fluoride-hexafluoropropene is total
Polymers, Vingon, polyvinyl chloride, ethylene-vinyl alcohol copolymer, Triafol T, Kynoar, poly- terephthaldehyde
At least one of sour diethyl alcohol ester, fluoroolefins-vinyl ether co-polymer, polytetrafluoroethylene (PTFE).
Adhesive layer
There is no particular restriction for the selection of adhesive in adhesive layer in the application, meets in the application barrier layer and mixed with turning
The bonding of the polymer film of luminescent material.
As an implementation, adhesive layer is selected from least one of epoxy resin adhesive.
The application provides a kind of photovoltaic cell laying structure, as shown in Figure 1.The photovoltaic cell is laid with mechanism
The weathering layer of stacking, the first sealant, band turn photoresist diaphragm, the second sealant, battery chip, third sealant, backsheet layer.
General photovoltaic battery laying structure is weathering layer (fluorine resin) at present, the first sealant (EVA), barrier film, the
Two sealants (EVA), battery chip, third sealant, backsheet layer.
Band turns photoresist diaphragm with excellent water proof oxygen barrier property, turns the barrier in photoresist membrane replacement universal architecture with band
Film turns photoresist diaphragm with band and replaces weathering layer (fluorine resin), the first sealant (EVA), obstructs three layers of film layer.Optionally,
It includes that the band being laminated turns photoresist diaphragm, the second sealant, battery chip, third sealing that the photovoltaic cell, which is laid with mechanism successively,
Layer, backsheet layer.
Embodiment 1
A kind of band turns photoresist diaphragm, successively includes protective layer, the barrier layer, conversion layer, barrier layer, protective layer of stacking, tool
Body structure is as shown in Figure 2.Wherein, protective layer is PVDF coating, and barrier layer is silicon nitride coating, and conversion layer is mixed with quantum dot
Polymer film.
The band turn photoresist diaphragm the preparation method is as follows:
A weighs quantum dot powder while weighing polymethyl methacrylate (PMMA) powder.(quantum dot is methylamine lead bromine calcium
Titanium ore quantum dot powder is purchased from Zhangjiagang Hai Na to smart new material Science and Technology Ltd.)
B is admixed together by quantum dot powder and polymethyl methacrylate (PMMA) powder, mass ratio 1:100.
C mixes said mixture and chloroform according to mass ratio 1:4 ratio, stirs 1h, quantum dot and PMMA are in chloroform
Dissolution forms homogeneous solution.
D stitches coating apparatus for above-mentioned solution coating on peelable base PET release film by item, individually winds after dry,
The PMMA film for being mixed with quantum dot is obtained, thickness of dry film is 100 μm.
By magnetron sputtering apparatus, one layer of nitridation is deposited in its front and back sides in the above-mentioned PMMA film with quantum dot by e respectively
Silicon coating, coating layer thickness 50nm.
F is coated with one layer of PVDF (Kynoar) coating in above-mentioned film front by way of melting extrusion, applies thickness
Degree is 20 microns, obtains the barrier film that band turns light effect, stand-by after winding.
The barrier film that band is turned light effect by g makes its size meet the package size of photovoltaic cell by die-cutting device, according to
Band turn the barrier film of light effect, the first sealant, battery chip, the second sealant, backsheet layer structure be laid with photovoltaic cell.Its
The barrier film PVDF that middle band turns light effect is placed on outside.
Embodiment 2
A kind of band turns photoresist diaphragm, successively includes barrier layer, the conversion layer, barrier layer of stacking, specific structure such as Fig. 2 institute
Show.Wherein, protective layer is PVDF coating, and barrier layer is silica inorganic coating, and conversion layer is the polymer mixed with quantum dot
Film layer.
The band turn photoresist diaphragm the preparation method is as follows:
A weighs quantum dot powder (CdSe quantum dots are purchased from Zhangjiagang Hai Na to smart new material Science and Technology Ltd.)
Ethylene-vinyl alcohol copolymer (EVOH) particle is weighed simultaneously.
B is stirred evenly after mixing the ratio that quantum dot and polymer powder are 1:200 in mass ratio, is put into extrusion later
Molding equipment.
C by the tape casting formed mixed with quantum dot EVOH membrane material, 200 microns of thickness
By evaporated device, lower surface respectively deposits the inorganic coating of layer of silicon dioxide, thickness of coating to d on the above-mentioned films
100nm obtains the barrier film that band turns light effect, stand-by after winding.
E turns the barrier film layer of light effect, the second sealant, battery chip, third according to weathering layer, the first sealant, band
Sealant, backsheet layer are laid with solar battery.
Embodiment 3
A kind of band turns photoresist diaphragm, successively includes basement membrane, the barrier layer, conversion layer, barrier layer, basement membrane of stacking, specific to tie
Structure is as shown in Figure 3.Wherein, basement membrane PET, barrier layer come from barrier film, and barrier film includes basement membrane and barrier layer, conversion layer mixed with
The polymer film of quantum dot.
The band turn photoresist diaphragm the preparation method is as follows:
By perovskite precursor solution, (precursor solution group becomes cesium bromide and is dissolved in each 0.01g of lead bromide a
5gDMF), monomer methacrylic acid -2- hydroxyl ethyl ester, oligomer isobornyl acrylate, curing agent isophorone diisocyanate
The ratio of 5:100:100:3 in mass ratio mixes, and stirring is allowed to evenly dispersed.
3% initiator 184 (1- hydroxycyclohexyl phenyl ketone) is added in said mixture in b, is coated on a resistance
It is combined to the resistance for obtaining band together and turning light effect with another barrier film using fitting and uv equipment by membrane surface
Diaphragm.
C turns the barrier film layer of light effect, the second sealant, battery chip, third according to weathering layer, the first sealant, band
Sealant, backsheet layer are laid with solar battery.
Embodiment 4
A kind of band turns photoresist diaphragm, successively includes basement membrane, the barrier layer, conversion layer, adhesive layer, barrier layer, base of stacking
Film, the specific structure is shown in FIG. 3.Wherein, basement membrane ETFE, barrier layer come from barrier film, and barrier film includes basement membrane and barrier layer,
Conversion layer is the polymer film mixed with quantum dot.
The band turn photoresist diaphragm the preparation method is as follows:
A is by perovskite presoma (bromination methylamine 0.02g, lead bromide 0.025g are dissolved in 5gDMF), poly-vinegar acid cellulose,
Polyvinyl chloride, DMAC (dimethyl acetamide) the solvent ratio of 1:1:1:20 in mass ratio are mixed evenly.
Above-mentioned mixed glue solution is coated on barrier film barrier face by b, is wound after drying and forming-film stand-by.
C in above-mentioned laminated film mixed with one layer of epoxy resin glue of polymeric layer coated on one side of quantum dot, be allowed to separately
One barrier film barrier layer is compound, obtains the barrier film that band turns light effect.
E turns the structure paving of the barrier film of light effect, the first sealant, battery chip, the second sealant, backsheet layer according to band
If photovoltaic cell.
Embodiment 5
A kind of band turns photoresist diaphragm, successively includes basement membrane, the barrier layer, conversion layer, barrier layer, basement membrane of stacking, specific to tie
Structure is as shown in Figure 3.Wherein, basement membrane PET, barrier layer come from barrier film, and barrier film includes basement membrane and barrier layer, and conversion layer is to mix
There is the polymer film of organic fluorescence materials.
The band turn photoresist diaphragm the preparation method is as follows:
A weighs rhodamine B (purchased from Aladdin) 5g, and acrylate glue adhesive sticker 95g is stirred evenly after mixing.
Above-mentioned mixed glue solution is coated on barrier film barrier face by b, compound with another barrier film after drying, is obtained band and is turned light
The barrier film of effect.
C turns the structure paving of the barrier film of light effect, the first sealant, battery chip, the second sealant, backsheet layer according to band
If photovoltaic cell.
Embodiment 6
A kind of band turns photoresist diaphragm, successively includes protective layer, the barrier layer, conversion layer, barrier layer, protective layer of stacking, tool
Body structure is as shown in Figure 2.Wherein, protective layer is PVDC coating, and barrier layer is silicon nitride coating, and conversion layer is mixed with rare-earth fluorescent
The polymer film of powder.
The band turn photoresist diaphragm the preparation method is as follows:
A weighs rare earth aluminate fluorescent powder (purchased from Wei Shi Bohr Photoelectric Co., Ltd.) while weighing Vingon
(PVDC) powder.
B is admixed together by rare earth aluminate phosphor powder and Vingon (PVDC) powder, and rare earth aluminate is glimmering
The mass ratio of light powder powder and Vingon is 3:100.
C, which feeds intake said mixture, is put into extrusion coated equipment, squeezes out curtain coating and obtains 150 microns thick of conversion layer film
By evaporated device, lower surface respectively deposits the inorganic coating of layer of silicon dioxide, thickness of coating to d on the above-mentioned films
100nm obtains the barrier film that band turns light effect, stand-by after winding.
E turns the barrier film layer of light effect, the second sealant, battery chip, third according to weathering layer, the first sealant, band
Sealant, backsheet layer are laid with solar battery.
The test of 7 barrier property of embodiment
Photoresist diaphragm is turned to band prepared by embodiment 1 to 6 and carries out barrier property test, test condition are as follows: climatic chamber
(Beijing letter reaches Tian Ju experimental facilities Co., Ltd, model: GDSJ-80), temperature and humidity are 50 DEG C of -80%RH, blue light illumination light intensity
For 150cd/m2, reliability test is carried out under the above conditions.Test results are shown in figure 4, and corresponding embodiment 4, Fig. 4 is shown in
Band turns photoresist diaphragm service life and is substantially better than common conversion film under high temperature and humidity test environment, plays the protection to quantum dot
Effect.The barrier property that the band of other embodiments turns photoresist diaphragm is similar to Example 4.
8 turns of optical property tests of embodiment
Turn photoresist diaphragm to band prepared by embodiment 1 to 6 to carry out turning optical property test, test condition are as follows: use UV-6100
The barrier film that type ultraviolet-uisible spectrophotometer and F-380 fluorescent powder light photometer turn light to band is tested.Test result is such as
Shown in Fig. 5, corresponding embodiment 3, Fig. 5 shows that band turns photoresist diaphragm the light of low band can be absorbed to be converted into the glimmering of 525nm or so
Light, to the light of high band then base completely through therefore battery phototransformation efficiency can be improved.The band of other embodiments turn photoresist every
Film to turn optical property similar to Example 3.
The above is only several embodiments of the application, not does any type of limitation to the application, although this Shen
Please disclosed as above with preferred embodiment, however not to limit the application, any person skilled in the art is not taking off
In the range of technical scheme, a little variation or modification are made using the technology contents of the disclosure above and is equal to
Case study on implementation is imitated, is belonged in technical proposal scope.
Claims (10)
1. a kind of band turns application of the photoresist diaphragm in photovoltaic cell laying structure, which is characterized in that the band turns photoresist diaphragm
Including at least one layer of conversion layer；The conversion layer includes at least one layer of polymer film mixed with light conversion agent；
And it is layered at least one layer of barrier layer on the conversion layer.
2. application according to claim 1, which is characterized in that the conversion layer with a thickness of 1~100 μm；
Preferably, the material of the barrier layer is selected from silicon nitride, disilicon trioxide, aluminum oxide, silicon oxynitride, nitridation
At least one of silicon, silica；
Preferably, the barrier layer with a thickness of 1~100nm；
Preferably, it further includes at least one layer of protective layer being layered on barrier layer that the band, which turns photoresist diaphragm,；
Preferably, the material of the protective layer be selected from ethylene-tetrafluoroethylene copolymer, vinylidene difluoride-hexafluoropropylene copolymer,
Vingon, polyvinyl chloride, ethylene-vinyl alcohol copolymer, Triafol T, Kynoar, poly terephthalic acid two
At least one of ethyl alcohol ester, fluoroolefins-vinyl ether co-polymer, polytetrafluoroethylene (PTFE)；
Preferably, the protective layer with a thickness of 1~200 μm；
Preferably, the band barrier conversion film further includes basement membrane；
Preferably, the basement membrane comes from barrier film；The barrier film includes basement membrane and barrier layer；
It preferably, include at least one layer of adhesive layer between the barrier level and the conversion layer of the barrier film.
3. application according to claim 1, which is characterized in that it includes the barrier being laminated that the band, which turns photoresist diaphragm successively,
Layer, the polymer film mixed with light conversion material, barrier layer；
Preferably, it includes the protective layer being laminated, barrier layer, the polymer film mixed with light conversion agent that the band, which turns photoresist diaphragm successively,
Layer, barrier layer, protective layer；
Preferably, it includes the basement membrane being laminated, barrier layer, the polymer film mixed with light conversion material that the band, which turns photoresist diaphragm successively,
Layer, barrier layer, basement membrane；
Preferably, it includes the basement membrane being laminated, barrier layer, the polymer film mixed with light conversion agent that the band, which turns photoresist diaphragm successively,
Layer, adhesive layer, barrier layer, basement membrane；
Preferably, it includes the inorganic coating being laminated, the polymer film mixed with light conversion agent, nothing that the band, which turns photoresist diaphragm successively,
Machine coating；
Preferably, it includes the polyvinylidene fluoride coating being laminated, inorganic coating, mixed with light conversion agent that the band, which turns photoresist diaphragm successively,
Polymer film, inorganic coating；
Preferably, it includes the barrier film being laminated, the polymer film mixed with light conversion agent, barrier that the band, which turns photoresist diaphragm successively,
Film；
Preferably, it includes the barrier film being laminated, the polymer film mixed with light conversion agent, gluing that the band, which turns photoresist diaphragm successively,
Oxidant layer, barrier film.
4. application according to claim 1, which is characterized in that the polymer is selected from polymethyl methacrylate, poly- third
Olefin(e) acid ester, ethylene-vinyl alcohol copolymer, poly-vinegar acid cellulose, polyurethane resin, polyvinylidene fluoride-hexafluoropropylene copolymer,
Poly- ethyl silicone resin, Kynoar, epoxy resin, acrylic resin, Vingon, polyvinyl chloride, polyvinyl fluoride, methyl
At least one of silicone resin, methyl phenyl silicone resin.
5. the preparation method that the band in the described in any item applications of Claims 1-4 turns photoresist diaphragm, which is characterized in that
The following steps are included:
A1 the glue containing light conversion agent or light conversion agent presoma) is obtained；
A2) glue is formed a film to obtain the polymer tunic mixed with light conversion agent；
A3) in two surface recombination at least one layer barrier layers up and down of the polymer tunic mixed with light conversion agent.
6. according to the method described in claim 5, it is characterized in that, step a1) described in include polymer, polymer in glue
At least one of monomer, oligomer；
Preferably, step a1) described in further include solvent, initiator, curing agent in glue；
Preferably, step a2) it include: by the glue-coating in peelable substrate, film forming obtains the polymerization mixed with light conversion agent
Nitride layer film；Or
By the glue-coating in the barrier level of barrier film, film forming obtains the polymer tunic mixed with light conversion agent；It is described
Barrier film includes basement membrane and barrier layer；
Preferably, step a3) it include: by two surface recombinations at least one up and down of the polymer tunic mixed with light conversion agent
Layer barrier layer；Or
In the surface recombination at least one layer barrier film of the polymer tunic mixed with light conversion agent；The barrier layer of the barrier film
The surface recombination in face and the polymer tunic mixed with light conversion agent.
7. according to the method described in claim 6, it is characterized in that, the surface of the polymer tunic mixed with light conversion agent applies
The barrier level of cloth adhesive layer, the adhesive layer surface and barrier film is compound.
8. according to the method described in claim 5, it is characterized in that, step a3) it include: by the polymerization mixed with light conversion agent
Two surfaces up and down of nitride layer film successively compound barrier layer, protective layer.
9. application according to claim 1, which is characterized in that the photovoltaic cell laying structure successively includes the resistance to of stacking
It waits layer, the first sealant, band and turns photoresist diaphragm, the second sealant, battery chip, third sealant, backsheet layer.
10. application according to claim 1, which is characterized in that the photovoltaic cell laying structure successively includes that band turns light
Barrier film, the second sealant, battery chip, third sealant, backsheet layer.
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