CN115274897B - High-reflection photovoltaic backboard and double-sided photovoltaic module - Google Patents
High-reflection photovoltaic backboard and double-sided photovoltaic module Download PDFInfo
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- CN115274897B CN115274897B CN202210842020.8A CN202210842020A CN115274897B CN 115274897 B CN115274897 B CN 115274897B CN 202210842020 A CN202210842020 A CN 202210842020A CN 115274897 B CN115274897 B CN 115274897B
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
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- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to the technical field of photovoltaic back plates, and discloses a high-reflection photovoltaic back plate and a double-sided photovoltaic module. The photovoltaic backboard comprises a fluorocarbon transparent coating, a down-conversion transparent base film, a down-conversion transparent coating, a high-reflection grid coating and an up-conversion transparent grid coating which are sequentially laminated from an air surface to a packaging adhesive film surface; wherein the down-conversion transparent base film is formed by co-extrusion of a PBT layer, a PET layer and a down-conversion film layer; wherein the down-conversion transparent coating is formed by coating and curing after fluorocarbon resin, acrylic resin, down-conversion nano material, curing agent and auxiliary agent are mixed into the down-conversion transparent coating; the down-conversion nano material is down-conversion nano inorganic photochromic material, and is quantum dot and Ce for generating photochromic for light energy with wavelength of 200-780nm and converting the photochromic material into visible light 3+ Doped fluoride and Eu 3+ At least one of the tellurate is doped. The photovoltaic backboard improves the double-sided rate and the power generation capacity of the double-sided photovoltaic module.
Description
Technical Field
The invention relates to the technical field of photovoltaic back plates, in particular to a high-reflection photovoltaic back plate and a double-sided photovoltaic module.
Background
Efficient use of renewable energy sources such as solar, wind and tidal energy is one solution to achieve sustainable energy utilization. The cost of the semiconductor solar cell material is higher, the spectrum conversion material has the advantages of low cost and simple process, the power generation efficiency of the photovoltaic cell assembly (photovoltaic assembly for short) is improved through the spectrum conversion material, higher marginal yield can be obtained, the cost of unit power generation is reduced, and the photovoltaic assembly with higher cost performance is obtained. Accordingly, a spectrum conversion material for improving the efficiency of a solar cell is becoming a popular subject of research. The spectrum conversion layer is used for the solar cell, can overcome inherent heat loss and spectrum loss, and has great application potential. The spectrum conversion material is applied to the solar cell in the form of a spectrum conversion layer, and can absorb solar photons which cannot be effectively utilized or captured and convert the solar photons into photons in a high-response band. The advantage of the spectral conversion layer is that no modification of standard solar cell architecture or intrinsic device materials is required and that the spectral conversion material can be scientifically selected for a specific type of solar cell.
Currently, a solar monocrystalline or polycrystalline battery assembly on the market generally adopts a structure that front plate glass, an encapsulation adhesive film (such as an EVA layer), a photovoltaic cell, an encapsulation adhesive film (such as an EVA layer) and a back plate are sequentially laminated from top to bottom. In the structure, the front plate glass and the packaging adhesive film pay more attention to the light transmittance, and generally, the light transmittance is required to be more than 91%, so that photons are absorbed as much as possible, and the photovoltaic cell has higher conversion efficiency and power output; the backboard is mostly a fluorine-containing polymer composite material, and plays roles in protecting water resistance and insulation.
The generated energy of the photovoltaic module is closely related to the spectral range and the proportion of the surface absorption of the photovoltaic cell which is incident into the photovoltaic module, the spectral response of the traditional single polycrystalline silicon cell and the recently rapidly developed black silicon and back-fluxed cell has a commonality, namely the conversion efficiency of the ultraviolet band is obviously lower than that of the visible light band, and the ultraviolet utilization rate is obviously lower. Therefore, it is necessary to convert the ultraviolet band with low utilization rate into the visible band with higher utilization rate. Therefore, organic fluorescent dyes, organic-inorganic rare earth composites, and up-conversion materials are attempted to be applied to photovoltaic module materials in order to improve the power output of photovoltaic modules. For example, in the prior art, as CN107564984a, there is further provided a solar cell back sheet with high weather resistance and high gain, an assembly and a manufacturing method, where the solar cell back sheet includes an adhesive inner layer having a light directional reflection function and a light wave conversion function, which is disposed on a substrate layer, and a fine structure is disposed on an outer surface of the adhesive inner layer, and the light utilization rate of solar energy transmitting light to the front surface of the photovoltaic assembly is improved and the output power is improved by the adhesive inner layer and the fine structure. However, the existing solar cell backboard is still low in utilization rate of light rays on the front side and the back side of the photovoltaic module, so that the improvement effect on the light transmittance of 380-1100nm wave bands and the light reflectance of 400-800nm wave bands is not obvious, the existing solar cell backboard is low in double-sided rate after being applied to the double-sided photovoltaic module, and the generated energy and the generation efficiency of the double-sided photovoltaic module are further affected.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a high-reflection light conversion photovoltaic backboard so as to effectively solve the technical problem of low double-sided rate of a double-sided photovoltaic module obtained by adopting the existing photovoltaic backboard.
The second purpose of the invention is to overcome the defects of the prior art and provide a double-sided photovoltaic module with the high-reflection photovoltaic back plate.
Based on the above, the invention discloses a high-reflection light conversion photovoltaic backboard, which comprises a fluorocarbon transparent coating, a down-conversion transparent base film, a down-conversion transparent coating, a high-reflection grid coating and an up-conversion transparent grid coating which are sequentially laminated from an air surface to a packaging adhesive film surface;
the down-conversion transparent base film is a composite base film formed by a PBT layer, a PET layer and a down-conversion film layer through a three-layer coextrusion process;
wherein, the down-conversion transparent coating is prepared by mixing fluorocarbon resin, acrylic resin, down-conversion nano material, curing agent and auxiliary agent, and then is coated, cured and formed; the down-conversion nano material is down-conversion nano inorganic photochromic material, and is quantum dot and Ce for generating photochromic to light energy with wavelength of 200-780nm and converting the photochromic material into visible light 3+ Doped fluoride and Eu 3+ At least one of the tellurate is doped.
Preferably, the color of the quantum dot includes at least one of blue, green, and red; the particle size of the quantum dot is 5-20nm, or the Ce 3+ Doped fluoride and Eu 3+ The particle size of the doped tellurate is 30-80nm.
Wherein, the quantum dot is: such as cadmium selenide, zinc sulfide, zinc selenide, cadmium sulfide and indium phosphide, such as cadmium zinc selenide, cadmium zinc selenide sulfide and alloy quantum dots of phosphorus zinc indium sulfide, such as quantum dots of core-shell structures of cadmium selenide @ zinc sulfide, indium phosphide @ zinc sulfide, cadmium zinc selenide @ zinc sulfide and cadmium zinc selenide sulfide @ zinc sulfide.
Preferably, the down-conversion transparent coating used for the down-conversion transparent coating comprises the following raw materials in parts by weight: 55-80 parts of FEVE resin, 10-35 parts of acrylic resin, 0.3-1 part of down-conversion nano material, 5-10 parts of isocyanate curing agent and 8-15 parts of solvent; the down-conversion clear coat layer has a thickness of 5-15 μm.
Preferably, the thickness of the PBT layer is 5-10 μm, the thickness of the PET layer is 255-265 μm, and the thickness of the down-conversion film layer is 5-30 μm.
Preferably, the refractive index of the fluorocarbon transparent coating is 1.40-1.45, and the refractive index of the down-converted transparent base film is 1.5-1.6.
Further preferably, the fluorocarbon transparent coating used for the fluorocarbon transparent coating comprises the following raw materials in parts by weight: 20-45 parts of polytetrafluoroethylene resin, 15-30 parts of polyvinylidene fluoride resin, 15-25 parts of acrylic resin, 6-10 parts of isocyanate curing agent, 5-12 parts of silica filler, 3-10 parts of propylene glycol methyl ether acetate solvent, 0.2-1 part of ultraviolet absorbent, 0.1-1 part of antioxidant, 0.2-1 part of leveling agent and 0.4-2 parts of defoaming agent; the fluorocarbon transparent coating has a thickness of 15-25 μm.
Preferably, the high-reflection grid coating is prepared by mixing fluorocarbon resin, acrylic resin, titanium pigment, a curing agent and an auxiliary agent to prepare a white high-reflection grid coating, and then performing screen printing and curing molding; the particle size of the titanium dioxide is 300-600nm.
Further preferably, the high-reflection grid coating used for the high-reflection grid coating comprises the following raw materials in parts by weight: 40-70 parts of fluorocarbon resin, 10-20 parts of acrylic resin, 20-50 parts of titanium dioxide, 4-5 parts of isocyanate curing agent, 0.2-2 parts of leveling agent, 0.4-1 part of defoamer, 0.2-0.5 part of stabilizer, 0.3-1 part of antioxidant and 2-8 parts of solvent; the thickness of the high-reflection grid coating is 5-15 mu m.
Preferably, the up-conversion transparent grid coating is prepared by mixing fluorocarbon resin, acrylic resin, up-conversion nano material, curing agent and auxiliary agent, and then performing screen printing and curing molding; the up-conversion nano material is an up-conversion nano inorganic photochromic material, and is a material which can generate photochromic to light energy with the wavelength of 980-1600nm and convert the photochromic material into visible light.
Further preferably, the up-conversion nanomaterial is NaYF with a particle size of 5-20nm 4 :Er 3+ /Yb 3+ 、 LiYF 4 :Er 3+ /Yb 3+ 、NaYF 4 :Yb 3+ /Tm 3+ 、NaYF 4 :Ho 3+ /Yb 3+ 、Ho 3+ /Yb 3+ Co-doped Gd 2 O 3 And E is 3+ /Yb 3+ Co-doped CeO 2 At least one of the nanowires.
Further preferably, the up-conversion transparent grid coating used for the up-conversion transparent grid coating comprises the following raw materials in parts by weight: 50-80 parts of fluorocarbon resin, 10-40 parts of acrylic resin, 0.2-1 part of up-conversion nano material, 7-8 parts of isocyanate curing agent, 0.2-1 part of leveling agent, 0.2-0.5 part of defoamer, 0.4-1 part of stabilizer, 0.3-0.5 part of antioxidant and 18-28 parts of solvent; the thickness of the up-conversion transparent grid coating is 5-10 mu m.
The invention also discloses a double-sided photovoltaic module, which comprises a photovoltaic front plate, a first packaging adhesive film, a photovoltaic cell piece, a second packaging adhesive film and a photovoltaic backboard, wherein the photovoltaic front plate, the first packaging adhesive film, the photovoltaic cell piece, the second packaging adhesive film and the photovoltaic backboard are sequentially arranged in a lamination manner from top to bottom; and the up-conversion transparent grid coating is attached to the second packaging adhesive film, and grid positions of the high-reflection grid coating and the up-conversion transparent grid coating correspond to gaps between two adjacent photovoltaic battery pieces.
Compared with the prior art, the invention at least comprises the following beneficial effects:
according to the photovoltaic backboard, through the cooperation of the fluorocarbon transparent coating, the down-conversion transparent base film, the down-conversion transparent coating, the high-reflection grid coating and the up-conversion transparent grid coating which are sequentially arranged from the air surface to the packaging adhesive film surface, the weather resistance and corrosion resistance of the photovoltaic backboard can be ensured, the light on the back surface of the double-sided photovoltaic module can be effectively utilized through the reflection increasing, down-conversion, reflection and up-conversion effects on sunlight, ultraviolet light is converted into visible light, sunlight enters the photovoltaic cell from the back surface of the photovoltaic backboard, the light transmitted from the front surface of the double-sided photovoltaic module is reflected back, the double-sided rate of the double-sided photovoltaic module is improved, infrared light can be converted into visible light after passing through the up-conversion transparent grid coating, and the visible light is reflected back to the surface of the photovoltaic cell of the double-sided photovoltaic module, the problem that the double-sided photovoltaic module is low in double-sided rate is effectively solved, and the power generation capacity and the power generation efficiency of the double-sided photovoltaic module are improved; in addition, the down-conversion transparent base film can improve the adhesion performance between the down-conversion transparent base film and the down-conversion transparent coating, can also improve the thickness of the down-conversion layered structure, improve the transmittance of visible light, convert more ultraviolet light into visible light, improve the light utilization rate, further improve the generating capacity and the generating efficiency of the double-sided photovoltaic module, and can absorb a part of ultraviolet light to protect the photovoltaic backboard.
Drawings
Fig. 1 is a schematic diagram of a partial cross-sectional structure of a highly reflective photovoltaic back sheet according to the present embodiment.
Fig. 2 is a schematic front view of a highly reflective photovoltaic back sheet according to the present embodiment.
Reference numerals illustrate: a fluorocarbon transparent coating 1; a down-converted transparent base film 2; a PBT layer 21; a PET layer 22; a down-conversion film layer 23; a down-conversion transparent coating 3; a highly reflective grid coating 4; up-converting transparent mesh coating 5.
Detailed Description
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
Example 1
1-2, a highly reflective photovoltaic back sheet with light conversion is a multilayer structure formed by coating and superposition, and comprises a down-conversion transparent base film 2, a fluorocarbon transparent coating 1 superposed on the air surface (i.e. the back surface) of the down-conversion transparent base film 2, and a down-conversion transparent coating 3 superposed on the packaging adhesive film surface (i.e. the front surface) of the down-conversion transparent base film 2; the front surface of the down-conversion transparent coating 3 is also provided with a high-reflection grid coating 4 and an up-conversion transparent grid coating 5 which are sequentially overlapped.
Wherein the down-conversion transparent base film 2 is a composite base film formed by a three-layer coextrusion process of a PBT layer 21, a PET layer 22 and a down-conversion film layer 23; the thickness of the PBT layer 21 is 5-10 μm, the thickness of the PET layer 22 is 255-265 μm, and the thickness of the down-conversion film layer 23 is 5-30 μm.
The manufacturing process of the down-conversion transparent base film 2 is as follows: drying PBT colloidal particles, adding additives such as an antioxidant, a hydrolysis resistance additive and an adhesion promoter, and shaking uniformly to obtain a mixture 1; drying PET colloidal particles, adding additives such as an antioxidant, a hydrolysis resistance additive and an ultraviolet absorber, and shaking uniformly to obtain a mixed material 2; meanwhile, after drying PBT colloidal particles, adding the following auxiliary agents of a conversion nano material, an antioxidant and an adhesion promoter, and shaking uniformly to obtain a mixed material 3; and respectively adding the mixture 1, the mixture 2 and the mixture 3 into corresponding extruders, and sequentially carrying out three-layer coextrusion, plasticizing and forming, three-roller calender calendaring and sizing and coiling by a coiling machine to obtain the down-conversion transparent base film 2. Wherein the drying temperature of the PBT colloidal particles and the PET colloidal particles is 100-150 ℃, preferably 120 ℃.
In the process of preparing the down-converting transparent base film 2, an adhesion promoter is generally added to the raw materials of the PBT layer 21 and the down-converting film layer 23, so that the front and back surfaces of the prepared down-converting transparent base film 2 have good adhesion properties with the down-converting transparent coating 3 and the fluorocarbon transparent coating 1, respectively. Moreover, since part of the raw materials are the same between the down-conversion film layer 23 and the down-conversion transparent coating layer 3, the adhesion performance between the down-conversion transparent base film 2 and the down-conversion transparent coating layer 3 can be further improved; the down-conversion film layer 23 is additionally arranged in the down-conversion transparent base film 2, so that the thickness of the down-conversion layered structure can be increased, the transmittance of visible light can be improved, more ultraviolet light can be converted into visible light, the light utilization rate can be improved, and the generating capacity and the generating efficiency of the double-sided photovoltaic module can be improved; and the ultraviolet light is converted into visible light, and meanwhile, a part of ultraviolet light can be absorbed, so that the photovoltaic backboard can be protected well, and the photovoltaic backboard can be prevented from yellowing and aging due to the ultraviolet light.
Wherein the fluorocarbon transparent coating 1 has a thickness of 15-25 μm. The fluorocarbon transparent coating 1 is: the fluorocarbon transparent coating is prepared by mixing polytetrafluoroethylene resin, polyvinylidene fluoride resin, acrylic resin, a curing agent, an ultraviolet absorber and an auxiliary agent, and is formed by coating and curing.
Specifically, the fluorocarbon transparent coating used for the fluorocarbon transparent coating 1 comprises the following raw materials in parts by weight: 20-45 parts of polytetrafluoroethylene resin, 15-30 parts of polyvinylidene fluoride resin, 15-25 parts of acrylic resin, 6-10 parts of isocyanate curing agent, 5-12 parts of silica filler, 3-10 parts of propylene glycol methyl ether acetate solvent, 0.2-1 part of ultraviolet absorbent, 0.1-1 part of antioxidant, 0.2-1 part of leveling agent and 0.4-2 parts of defoaming agent.
In order to reduce the cost and further improve the adhesion performance of the fluorocarbon transparent coating 1 and the down-conversion transparent base film 2, the fluorocarbon transparent coating 1 is added with a proper amount of acrylic resin as a main resin in addition to polytetrafluoroethylene resin and polyvinylidene fluoride resin; the three main resins are matched with a curing agent, an ultraviolet absorber and an auxiliary agent thereof, so that the obtained fluorocarbon transparent coating 1 can provide excellent weather resistance and corrosion resistance for the photovoltaic backboard.
In practice, the refractive index of the down-converting transparent base film 2 is 1.5 to 1.6, and the refractive index of the fluorocarbon transparent coating 1 is 1.40 to 1.45, preferably 1.40 to 1.42, which is slightly lower than the refractive index of the down-converting transparent base film 2; in this way, more solar energy can penetrate through the fluorocarbon transparent coating 1 and enter the photovoltaic backboard, so that the utilization rate of light rays on the back surface of the double-sided photovoltaic module is improved by matching the down-conversion transparent base film 2, the down-conversion transparent coating 3, the high-reflection grid coating 4 and the up-conversion transparent grid coating 5, the double-sided rate of the double-sided photovoltaic module is improved, and the generated energy and the power generation efficiency of the double-sided photovoltaic module are further improved.
Wherein the down-conversion transparent coating 3 has a thickness of 8-20 μm, preferably 5-15 μm. The down-conversion clear coat layer 3 is: the fluorocarbon resin, the acrylic resin, the down-conversion nano material, the curing agent and the auxiliary agent are mixed to prepare the down-conversion transparent coating, and then the down-conversion transparent coating is coated, cured and formed.
Specifically, the down-conversion clear coating used for the down-conversion clear coating 3 comprises the following raw materials in parts by weight: 55-80 parts of FEVE resin, 10-35 parts of acrylic resin, 0.3-1 part of down-conversion nano material, 5-10 parts of isocyanate curing agent and 8-15 parts of solvent.
The down-conversion nano-materials used in the down-conversion thin film layer 23 and the down-conversion transparent coating layer 3 of the present embodiment are down-conversion nano-inorganic photochromic materials, which are quantum dots, ce capable of generating photochromic light with a wavelength of 200-780nm and converting light with a wavelength of 200-780nm into visible light 3+ Doped fluoride and Eu 3+ At least one of the tellurate is doped. The color of the quantum dot is at least one of blue, green and red;the quantum dot specifically comprises the following components: such as cadmium selenide, zinc sulfide, zinc selenide, cadmium sulfide and indium phosphide, and such as cadmium zinc selenide, cadmium zinc selenide sulfide and zinc phosphide indium sulfide, and such as cadmium selenide@zinc sulfide, indium phosphide@zinc sulfide, cadmium zinc selenide@zinc sulfide and cadmium zinc selenide sulfide@zinc sulfide.
In the down-conversion nano material, the particle size of the quantum dots is 5-20nm, and Ce 3+ Doped fluoride and Eu 3+ The grain diameter of the doped tellurate is 30-80nm; thus, the down-conversion nanomaterial is nano-sized, and thus, the transparency and light transmittance properties of the down-conversion transparent coating layer 3 and the down-conversion thin film layer 23 can be improved; in addition, the down-conversion transparent coating 3 can convert ultraviolet light entering the photovoltaic backboard into visible light, and can improve the generating capacity and the generating efficiency of the front and back sides of the double-sided photovoltaic module.
Wherein the highly reflective grid coating 4 has a thickness of 5-15 μm, preferably 5-10 μm. The highly reflective mesh coating 4 is: the white high-reflection grid coating is prepared by mixing fluorocarbon resin, acrylic resin, titanium pigment, a curing agent and an auxiliary agent, and is formed by screen printing and curing. Wherein, the grain diameter of the titanium dioxide is 300-600nm, the titanium dioxide with the average grain diameter of 400nm is selected, and the high-reflection grid coating 4 has higher light reflectivity under the condition of the same addition amount.
Specifically, the high-reflection grid coating used for the high-reflection grid coating 4 comprises the following raw materials in parts by weight: 40-70 parts of fluorocarbon resin, 10-20 parts of acrylic resin, 20-50 parts of titanium pigment, 4-5 parts of isocyanate curing agent, 0.2-2 parts of flatting agent, 0.4-1 part of defoamer, 0.2-0.5 part of stabilizer, 0.3-1 part of antioxidant and 2-8 parts of solvent.
Wherein the thickness of the upconversion transparent grid coating 5 is 5-10 μm. The up-conversion transparent mesh coating 5 is: fluorocarbon resin, acrylic resin, up-conversion nano material, curing agent and auxiliary agent are mixed to prepare up-conversion transparent grid coating, and then the up-conversion transparent grid coating is formed by screen printing and curing.
Specifically, the up-conversion transparent mesh coating used for the up-conversion transparent mesh coating 5 comprises the following raw materials in parts by weight: 50-80 parts of fluorocarbon resin, 10-40 parts of acrylic resin, 0.2-1 part of up-conversion nano material, 7-8 parts of isocyanate curing agent, 0.2-1 part of leveling agent, 0.2-0.5 part of defoamer, 0.4-1 part of stabilizer, 0.3-0.5 part of antioxidant and 18-28 parts of solvent.
The up-conversion nano material is an up-conversion nano inorganic photochromic material which can generate photochromism for light with the wavelength of 980-1600nm and convert the light with the wavelength of 980-1600nm into visible light; preferably, it is: naYF 4 :Er 3+ /Yb 3+ 、LiYF 4 :Er 3+ /Yb 3+ 、NaYF 4 :Yb 3+ /Tm 3+ 、NaYF 4 :Ho 3+ /Yb 3+ 、Ho 3+ /Yb 3+ Co-doped Gd 2 O 3 And E is 3+ /Yb 3+ Co-doped CeO 2 At least one of the nanowires. The particle size of the up-conversion nanomaterial is 5-20nm, so that the up-conversion nanomaterial in the up-conversion transparent mesh coating 5 is nano-sized, and thus excellent transparency and light transmittance properties of the up-conversion transparent mesh coating 5 can be ensured.
In the photovoltaic backboard of the embodiment, the high-reflection grid coating 4 and the up-conversion transparent grid coating 5 are both grid-structured coatings; therefore, a whole layer of high-reflection grid paint and up-conversion transparent grid paint are not required to be arranged, the use of the high-reflection grid paint and the up-conversion transparent grid paint can be greatly reduced, and the cost is saved. Moreover, the grid positions of the highly reflective grid coating 4 and the up-conversion transparent grid coating 5 correspond to the gap positions between the adjacent two photovoltaic cells, that is, only the grid positions corresponding to the gap positions are coated with the highly reflective grid coating and the up-conversion transparent grid coating. Specifically, the ratio of the sum of the projected areas of the highly reflective mesh coating 4 on the surface of the down-conversion transparent coating 3 to the area of the surface of the down-conversion transparent coating 3 is 15 to 25%, preferably 20%; the ratio of the sum of the projected areas of the up-conversion transparent mesh coating 5 on the surface of the down-conversion transparent coating 3 to the area of the surface of the down-conversion transparent coating 3 is not less than 15%. In this way, the high-reflection grid coating 4 can effectively reflect sunlight transmitted from gaps on the front surface of the photovoltaic cell, and the sunlight on the back surface can also transmit from gaps between adjacent grids of the white high-reflection grid coating 4 and enter the photovoltaic cell from the back surface of the photovoltaic backboard, so that the light utilization rate of the double-sided photovoltaic module is improved, the generating capacity and the generating efficiency of the double-sided photovoltaic module are further improved, the up-conversion transparent grid coating 5 can further effectively convert light with the wavelength of 980-1600nm to the front surface and the back surface of the photovoltaic cell with the wavelength of 550nm, and then the light is reflected back to the surface of the photovoltaic cell of the double-sided photovoltaic module, so that the double-sided rate of the double-sided photovoltaic module can be improved, and the generating capacity and the generating efficiency of the double-sided photovoltaic module are further improved. Since the highly reflective mesh coating 4 and the up-conversion transparent mesh coating 5 are formed by screen printing, the mesh shapes of the highly reflective mesh coating 4 and the up-conversion transparent mesh coating 5 are identical to the mesh shapes of the screen printing plate, and the mesh shapes include, but are not limited to, square, rectangular, or other shapes.
In summary, the photovoltaic backboard of the embodiment can ensure weather resistance and corrosion resistance of the photovoltaic backboard through the cooperation of the fluorocarbon transparent coating 1, the down-conversion transparent base film 2, the down-conversion transparent coating 3, the high-reflection grid coating 4 and the up-conversion transparent grid coating 5 which are sequentially arranged from the air surface to the packaging film surface, can effectively utilize the light on the back surface of the double-sided photovoltaic module through the reflection increasing, down-conversion, reflection and up-conversion effects of sunlight, converts ultraviolet light into visible light, enables the sunlight to enter the photovoltaic cell from the back surface of the photovoltaic backboard, reflects back the light transmitted by the front surface of the double-sided photovoltaic module, improves the double-sided rate of the double-sided photovoltaic module, and can convert infrared light into visible light to reflect back to the surface of the photovoltaic cell of the double-sided photovoltaic module when passing through the up-conversion transparent grid coating 5, so that the problem that the double-sided rate of the double-sided photovoltaic module is low is effectively solved, the generated energy of the double-sided photovoltaic module is improved, and the generated energy efficiency of the double-sided photovoltaic module are further improved. In addition, the main resins of the up-conversion transparent grid coating 5, the high-reflection grid coating 4, the down-conversion transparent coating 3 and the fluorocarbon transparent coating 1 are matched with acrylic resin besides fluorocarbon resin, so that the cost can be reduced, and the interlayer adhesion performance can be improved, so that interlayer falling-off during long-term use can be prevented.
The double-sided photovoltaic module comprises a photovoltaic front plate, a first packaging adhesive film, a photovoltaic cell, a second packaging adhesive film and a photovoltaic backboard, wherein the photovoltaic front plate, the first packaging adhesive film, the photovoltaic cell, the second packaging adhesive film and the photovoltaic backboard are sequentially stacked from top to bottom; the double-sided photovoltaic assembly comprises a plurality of photovoltaic cells, wherein the photovoltaic cells are distributed between a first packaging adhesive film and a second packaging adhesive film at intervals, and the photovoltaic cells are photovoltaic cells which can perform photovoltaic power generation on the front side and the back side; the photovoltaic backboard is the high-reflection photovoltaic backboard according to the embodiment; the up-conversion transparent grid coating 5 is attached to the second packaging adhesive film, and grid positions of the high-reflection grid coating 4 and the up-conversion transparent grid coating 5 correspond to gaps between two adjacent photovoltaic cell pieces.
Example 2
A highly reflective light converting photovoltaic backsheet of this embodiment, see in particular embodiment 1, differs from embodiment 1 in that:
the fluorocarbon transparent coating used for the fluorocarbon transparent coating 1 comprises the following raw materials in parts by weight: 30 parts of polytetrafluoroethylene resin, 25 parts of polyvinylidene fluoride resin, 20 parts of acrylic resin, 0.3 part of leveling agent, 8 parts of isocyanate curing agent, 0.4 part of defoamer, 0.2 part of ultraviolet absorber, 10 parts of silica filler, 5 parts of propylene glycol methyl ether acetate solvent and 0.1 part of antioxidant. The fluorocarbon transparent coating 1 has a thickness of 22 μm.
Wherein the total thickness of the down-converted transparent base film 2 was 285 μm and the thickness of the down-conversion film layer 23 was 20 μm.
The down-conversion transparent coating used for the down-conversion transparent coating 3 comprises the following raw materials in parts by weight: 60 parts of FEVE resin, 20 parts of acrylic resin, 0.5 part of down-conversion nano material, 10 parts of isocyanate curing agent and 9.5 parts of solvent. The down-conversion nano material in the down-conversion transparent coating 3 and the down-conversion transparent base film 2 is a blue light quantum dot of a core-shell structure of cadmium zinc selenium sulfur@zinc sulfide.
The high-reflection grid coating used for the high-reflection grid coating 4 comprises the following raw materials in parts by weight: 40 parts of FEVE resin, 20 parts of acrylic resin, 29 parts of titanium dioxide, 5 parts of isocyanate curing agent, 1 part of leveling agent, 1 part of defoamer, 0.5 part of stabilizer, 1 part of antioxidant and 2.5 parts of solvent. The highly reflective mesh coating 4 has a thickness of 10 μm; the particle size of the titanium dioxide is 400nm.
The up-conversion transparent grid coating used for the up-conversion transparent grid coating 5 comprises the following raw materials in parts by weight: 55 parts of FEVE resin, 10 parts of acrylic resin, 1 part of up-conversion nano material, 8 parts of isocyanate curing agent, 0.5 part of leveling agent, 0.5 part of defoaming agent, 1 part of stabilizer, 0.5 part of antioxidant and 24.5 parts of solvent. The thickness of the upconversion transparent grid coating 5 is 10 μm. Up-conversion of nanomaterials to LiYF 4 :Er 3+ /Yb 3+ 。
The preparation method of the high-reflection light conversion photovoltaic backboard comprises the following steps: firstly, coating a layer of fluorocarbon transparent coating on the back surface of a down-conversion transparent base film 2, after curing, coating the down-conversion transparent coating on the front surface of a down-conversion film layer 23 of the down-conversion transparent base film 2, and curing by using a plurality of sections of ovens with different temperatures to obtain a transparent photovoltaic backboard, wherein MEK test data of the transparent photovoltaic backboard is more than 300 times; and then slicing the transparent grid coiled material by using a cutting mode so as to carry out grid screen printing later, wherein the screen printing is to print high-reflection grid coating on the front surface of the down-conversion transparent coating 3 locally and selectively, and after curing, print conversion transparent grid coating on the front surface of the high-reflection grid coating 4, and after curing, obtain the high-reflection light conversion photovoltaic backboard of the embodiment.
Example 3
The high-reflection photovoltaic back sheet and the preparation method thereof refer to embodiment 2, and the difference between the high-reflection photovoltaic back sheet and embodiment 2 is that:
the down-conversion transparent coating used for the down-conversion transparent coating 3 comprises the following raw materials in parts by weight: 65 parts of FEVE resin, 18 parts of acrylic resin, 1 part of down-conversion nano material, 8 parts of isocyanate curing agent and 12 parts of solvent. The down-conversion nano material in the down-conversion transparent coating 3 and the down-conversion transparent base film 2 is zinc-indium-sulfur phosphorus alloy quantum dots.
Example 4
The high-reflection photovoltaic back sheet and the preparation method thereof refer to embodiment 2, and the difference between the high-reflection photovoltaic back sheet and embodiment 2 is that:
the high-reflection grid coating used for the high-reflection grid coating 4 comprises the following raw materials in parts by weight: 50 parts of FEVE resin, 15 parts of acrylic resin, 35 parts of titanium dioxide, 5 parts of isocyanate curing agent, 1.5 parts of flatting agent, 1 part of defoamer, 0.5 part of stabilizer, 0.8 part of antioxidant and 7 parts of solvent; wherein the particle size of the titanium dioxide is 500nm.
Example 5
The high-reflection photovoltaic back sheet and the preparation method thereof refer to embodiment 2, and the difference between the high-reflection photovoltaic back sheet and embodiment 2 is that:
the up-conversion transparent grid coating used for the up-conversion transparent grid coating 5 comprises the following raw materials in parts by weight: 60 parts of FEVE resin, 20 parts of acrylic resin, 1 part of up-conversion nano material, 8 parts of isocyanate curing agent, 1 part of leveling agent, 0.5 part of defoamer, 1 part of stabilizer, 0.5 part of antioxidant and 28 parts of solvent; wherein, the up-conversion nano material is Ho 3+ /Yb 3+ Co-doped Gd 2 O 3 。
Comparative example 1
A photovoltaic backsheet of this comparative example and a method for producing the same, specifically referring to example 2, differs from example 2 in that: the down-converted transparent base film 2 of example 2 was replaced with a transparent base film having no down-conversion function, that is, the transparent base film was a composite base film formed by a three-layer coextrusion process of a PBT layer, a PET layer and a PBT layer; the down-converting nanomaterial in the down-converting clear coat used in down-converting clear coat 3 of example 2 was replaced with a solvent; the titanium white powder with the particle size of 400nm in the high-reflection grid coating used in the high-reflection grid coating 4 of example 2 is replaced by titanium white powder with the particle size of 1.5 μm; the upconverting nanomaterial in the upconverting transparent grid coating used in upconverting transparent grid coating 5 of example 2 was replaced with a solvent; the photovoltaic backboard of the comparative example is obtained.
Comparative example 2
A photovoltaic backsheet of this comparative example and a method for producing the same, specifically referring to example 2, differs from example 2 in that: the titanium white powder with the particle size of 400nm in the high-reflection grid coating used in the high-reflection grid coating 4 of example 2 is replaced by titanium white powder with the particle size of 1.5 μm; the upconverting nanomaterial in the upconverting transparent grid coating used in upconverting transparent grid coating 5 of example 2 was replaced with a solvent; the photovoltaic backboard of the comparative example is obtained.
Comparative example 3
A photovoltaic backsheet of this comparative example and a method for producing the same, specifically referring to example 2, differs from example 2 in that: the down-converted transparent base film 2 of example 2 was replaced with a transparent base film having no down-conversion function, that is, the transparent base film was a composite base film formed by a three-layer coextrusion process of a PBT layer, a PET layer and a PBT layer; the down-converting nanomaterial in the down-converting clear coat used in down-converting clear coat 3 of example 2 was replaced with a solvent; the upconverting nanomaterial in the upconverting transparent grid coating used in upconverting transparent grid coating 5 of example 2 was replaced with a solvent; the photovoltaic backboard of the comparative example is obtained.
Comparative example 4
A photovoltaic backsheet of this comparative example and a method for producing the same, specifically referring to example 2, differs from example 2 in that: the down-converted transparent base film 2 of example 2 was replaced with a transparent base film having no down-conversion function, that is, the transparent base film was a composite base film formed by a three-layer coextrusion process of a PBT layer, a PET layer and a PBT layer; the down-converting nanomaterial in the down-converting clear coat used in down-converting clear coat 3 of example 2 was replaced with a solvent; the titanium white powder with the particle size of 400nm in the high-reflection grid coating used in the high-reflection grid coating 4 of example 2 is replaced by titanium white powder with the particle size of 1.5 μm; the photovoltaic backboard of the comparative example is obtained.
Performance testing
The photovoltaic back sheets of examples 2 to 4 and comparative examples 1 to 4 were subjected to the test of light transmittance of the transparent portion and light reflectance of the mesh portion, and the test data thereof are shown in the following tables 1 to 2:
table 1 light transmittance and light reflectance
As can be seen from table 1: the transparent portions of the photovoltaic back sheets of examples 2 to 5 were excellent in both light transmittance in the 380-1100nm band and light reflectance in the 400-800nm band of the mesh portion.
Table 2 light transmittance and light reflectance
As can be seen from table 2: the transparent portion of the photovoltaic back sheet of example 2 exhibited an optical transmittance of as high as 93.5% in the 380-1100nm band, and the mesh portion of the photovoltaic back sheet of example 2 exhibited an optical reflectance of as high as 77.5% in the 400-800nm band, as compared to comparative examples 1-4, and the photovoltaic back sheet of example 2 exhibited the best optical transmittance in the 380-1100nm band and the optical reflectance in the 400-800nm band.
In order to further examine the power generation amount and the power generation amount gain of the double-sided photovoltaic module manufactured by the photovoltaic backboard, the photovoltaic backboard of the embodiment 2 and the photovoltaic backboard of the comparative examples 1-4 are respectively manufactured into different types of double-sided photovoltaic modules, and the power generation amount tracking for 7 months is performed; in order to reduce the difference between the two-sided photovoltaic modules, 24-piece photovoltaic modules are manufactured, the same type of inverter is used, and the generated energy of each group of inverters is counted, wherein the generated energy data are shown in the following table 3:
TABLE 3 generating capacity data of different types of double-sided photovoltaic modules (Unit KW.h)
As can be seen from the data table 3, the power generation amount per month of the double-sided photovoltaic module of example 2 is the highest, and the average power generation amount per month of the double-sided photovoltaic module of example 2 is improved by 3 to 5kw.h compared with comparative examples 1 to 4.
Table 4 gain in power generation of different types of bifacial photovoltaic modules
| Time | Comparative example 1 (control group) | Comparative example 2 | Comparative example 3 | Comparative example 4 | Example 2 |
| 12 months of | 0.00％ | 0.09％ | 0.23％ | 0.18％ | 0.63％ |
| 1 month | 0.00％ | 0.10％ | 0.31％ | 0.24％ | 0.79％ |
| 2 months of | 0.00％ | 0.11％ | 0.30％ | 0.24％ | 0.80％ |
| 3 months of | 0.00％ | 0.10％ | 0.30％ | 0.20％ | 0.75％ |
| 4 months of | 0.00％ | 0.11％ | 0.29％ | 0.22％ | 0.81％ |
| 5 months of | 0.00％ | 0.12％ | 0.29％ | 0.22％ | 0.82％ |
| 6 months of | 0.00％ | 0.10％ | 0.25％ | 0.25％ | 0.74％ |
| Average of | 0.00％ | 0.11％ | 0.28％ | 0.22％ | 0.76％ |
As can be seen from the data table 4, compared with the control group, after the photovoltaic backboard of the comparative example 2 is sequentially provided with the down-conversion transparent base film and the down-conversion transparent coating, the average power generation amount of the double-sided photovoltaic module for 7 months is only improved by 0.11%; after the photovoltaic backboard of the comparative example 3 is provided with the high-reflection grid coating, the average power generation amount of the double-sided photovoltaic module is only increased by 0.28% after 7 months; after the up-conversion transparent grid coating is arranged on the photovoltaic backboard in the comparative example 4, the average power generation amount of the double-sided photovoltaic module is only increased by 0.22% in 7 months; and after the photovoltaic backboard of the embodiment 2 is sequentially provided with the down-conversion transparent base film 2, the down-conversion transparent coating 3, the high-reflection grid coating 4 and the up-conversion transparent grid coating 5, the average power generation amount of the double-sided photovoltaic module for 7 months is improved by 0.76%.
Therefore, the photovoltaic backboard can effectively improve the generating capacity and the generating efficiency of the double-sided photovoltaic module through the cooperative cooperation of the down-conversion transparent base film 2, the down-conversion transparent coating 3, the high-reflection grid coating 4 and the up-conversion transparent grid coating 5 which are sequentially arranged. In theory, the addition of the down-conversion transparent base film 2 and the down-conversion transparent coating 3 in the photovoltaic backboard can improve the transmittance of visible light, convert ultraviolet light into visible light and further improve the power generation of the double-sided photovoltaic module; the introduction of the high-reflection grid coating 4 can lead the sunlight which is wasted by directly passing through the gaps between the photovoltaic cells to be secondarily utilized by the reflection of the high-reflection grid coating 4, so that the average power generation of the double-sided photovoltaic module is improved; the up-conversion transparent grid coating 5 is introduced to reflect a part of light, convert the transmitted infrared light into visible light, and reflect the visible light again through the high-reflection grid coating 4 after the light is transmitted, so as to improve the power generation of the double-sided photovoltaic module.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiment and all such alterations and modifications as fall within the scope of the embodiments of the invention.
The foregoing has outlined rather broadly the more detailed description of the invention in order that the detailed description of the invention that follows may be better understood, and in order that the present principles and embodiments may be better understood; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present invention, the present description should not be construed as limiting the present invention in view of the above.
Claims (12)
1. The high-reflection light conversion photovoltaic backboard is characterized by comprising a fluorocarbon transparent coating, a down-conversion transparent base film, a down-conversion transparent coating, a high-reflection grid coating and an up-conversion transparent grid coating which are sequentially stacked from an air surface to a packaging adhesive film surface;
the down-conversion transparent base film is a composite base film formed by a PBT layer, a PET layer and a down-conversion film layer through a three-layer coextrusion process;
wherein, the down-conversion transparent coating is prepared by mixing fluorocarbon resin, acrylic resin, down-conversion nano material, curing agent and auxiliary agent, and then is coated, cured and formed; the down-conversion nano material is down-conversion nano inorganic photochromic material, and is quantum dot and Ce for generating photochromic to light energy with wavelength of 200-780nm and converting the photochromic material into visible light 3+ Doped fluoride and Eu 3+ At least one of the tellurate is doped.
2. The highly reflective light converting photovoltaic backsheet of claim 1 wherein the color of the quantum dots comprises at least one of blue, green and red; the particle size of the quantum dot is 5-20nm, or the Ce 3+ Doped fluoride and Eu 3+ Tellurium dopedThe particle size of the acid salt is 30-80nm.
3. The high-reflection light-converting photovoltaic backsheet according to claim 1, wherein the down-converting transparent coating used for the down-converting transparent coating comprises the following raw materials in parts by weight: 55-80 parts of FEVE resin, 10-35 parts of acrylic resin, 0.3-1 part of down-conversion nano material, 5-10 parts of isocyanate curing agent and 8-15 parts of solvent; the down-conversion clear coat layer has a thickness of 5-15 μm.
4. The highly reflective light converting photovoltaic backsheet according to claim 1, wherein the thickness of the PBT layer is 5-10 μm, the thickness of the PET layer is 255-265 μm, and the thickness of the down conversion film layer is 5-30 μm.
5. The highly reflective, light converting photovoltaic backsheet of claim 1 wherein the fluorocarbon transparent coating has a refractive index of 1.40-1.45 and the down-converting transparent base film has a refractive index of 1.5-1.6.
6. The high-reflection photovoltaic back sheet according to claim 5, wherein the fluorocarbon transparent coating comprises the following raw materials in parts by weight: 20-45 parts of polytetrafluoroethylene resin, 15-30 parts of polyvinylidene fluoride resin, 15-25 parts of acrylic resin, 6-10 parts of isocyanate curing agent, 5-12 parts of silica filler, 3-10 parts of propylene glycol methyl ether acetate solvent, 0.2-1 part of ultraviolet absorbent, 0.1-1 part of antioxidant, 0.2-1 part of leveling agent and 0.4-2 parts of defoaming agent; the fluorocarbon transparent coating has a thickness of 15-25 μm.
7. The high-reflection photovoltaic backboard according to claim 1, wherein the high-reflection grid coating is formed by screen printing and curing after being prepared into white high-reflection grid coating by mixing fluorocarbon resin, acrylic resin, titanium pigment, curing agent and auxiliary agent; the particle size of the titanium dioxide is 300-600nm.
8. The high-reflection photovoltaic back sheet according to claim 7, wherein the high-reflection grid coating used for the high-reflection grid coating comprises the following raw materials in parts by weight: 40-70 parts of fluorocarbon resin, 10-20 parts of acrylic resin, 20-50 parts of titanium dioxide, 4-5 parts of isocyanate curing agent, 0.2-2 parts of leveling agent, 0.4-1 part of defoamer, 0.2-0.5 part of stabilizer, 0.3-1 part of antioxidant and 2-8 parts of solvent; the thickness of the high-reflection grid coating is 5-15 mu m.
9. The high-reflection light conversion photovoltaic back sheet according to claim 1, wherein the up-conversion transparent grid coating is formed by screen printing and curing after being prepared by mixing fluorocarbon resin, acrylic resin, up-conversion nano material, curing agent and auxiliary agent; the up-conversion nano material is an up-conversion nano inorganic photochromic material, and is a material which can generate photochromic to light energy with the wavelength of 980-1600nm and convert the photochromic material into visible light.
10. The highly reflective photovoltaic backsheet according to claim 9, wherein the upconverting nanomaterial is NaYF with a particle size of 5-20nm 4 :Er 3+ /Yb 3+ 、LiYF 4 :Er 3+ /Yb 3+ 、NaYF 4 :Yb 3+ /Tm 3+ 、NaYF 4 :Ho 3+ /Yb 3+ 、Ho 3+ /Yb 3+ Co-doped Gd 2 O 3 And E is 3+ /Yb 3+ Co-doped CeO 2 At least one of the nanowires.
11. The high-reflection light-converting photovoltaic backsheet according to claim 9, wherein the up-conversion transparent grid coating used for the up-conversion transparent grid coating comprises the following raw materials in parts by weight: 50-80 parts of fluorocarbon resin, 10-40 parts of acrylic resin, 0.2-1 part of up-conversion nano material, 7-8 parts of isocyanate curing agent, 0.2-1 part of leveling agent, 0.2-0.5 part of defoamer, 0.4-1 part of stabilizer, 0.3-0.5 part of antioxidant and 18-28 parts of solvent; the thickness of the up-conversion transparent grid coating is 5-10 mu m.
12. A double-sided photovoltaic module comprising a photovoltaic front plate, a first packaging adhesive film, a photovoltaic cell, a second packaging adhesive film and a photovoltaic back plate which are sequentially laminated from top to bottom, wherein the photovoltaic back plate is a high-reflection photovoltaic back plate according to any one of claims 1 to 11; the up-conversion transparent grid coating is attached to the second packaging adhesive film, and grid positions of the high-reflection grid coating and the up-conversion transparent grid coating correspond to gaps between two adjacent photovoltaic battery pieces.
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| CN115732590B (en) * | 2022-11-08 | 2023-08-11 | 新源劲吾(北京)科技有限公司 | Light-transmitting photovoltaic module with unidirectional perspective film and application thereof |
| CN115566081B (en) * | 2022-11-11 | 2023-04-18 | 宁波长阳科技股份有限公司 | Photovoltaic module, preparation method thereof and solar cell |
| CN116333576B (en) * | 2023-03-30 | 2023-12-29 | 苏州弘道新材料有限公司 | Weather-resistant backboard inner layer coating composition and application thereof |
| CN116023877B (en) * | 2023-03-30 | 2023-06-27 | 苏州弘道新材料有限公司 | High-weather-resistance solar cell transparent backboard and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101661962A (en) * | 2008-08-29 | 2010-03-03 | 苏州中来太阳能材料技术有限公司 | Solar battery back film with high cohesiveness and processing process |
| CN101783369A (en) * | 2010-01-29 | 2010-07-21 | 联合金属科技(杭州)有限公司 | High-fluoride mixcrystal coating solar-energy photovoltaic cell back film and manufacturing method thereof |
| CN103646980A (en) * | 2013-12-24 | 2014-03-19 | 江苏金瑞晨新材料有限公司 | Back film having ultraviolet conversion function |
| WO2017032377A1 (en) * | 2015-08-27 | 2017-03-02 | Axmetic-Engineering V/ Jan Mahler | A method for manufacturing a solar cell panel and a solar cell panel manufactured using such a method |
| CN107564984A (en) * | 2017-07-18 | 2018-01-09 | 苏州中来光伏新材股份有限公司 | A kind of high durable, high-gain solar cell backboard, component and preparation method |
| CN111718661A (en) * | 2020-06-09 | 2020-09-29 | 苏州福斯特光伏材料有限公司 | Gridding packaging adhesive film and preparation method thereof |
| CN212517224U (en) * | 2020-10-28 | 2021-02-09 | 苏州易昇光学材料有限公司 | Transparent solar backboard with light conversion function |
| CN114097096A (en) * | 2019-07-15 | 2022-02-25 | 韩华道达尔有限公司 | Solar energy conversion material, solar cell package including the same, and solar cell including the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ES2733319T3 (en) * | 2012-05-16 | 2019-11-28 | Borealis Ag | Polymer sheet |
-
2022
- 2022-07-18 CN CN202210842020.8A patent/CN115274897B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101661962A (en) * | 2008-08-29 | 2010-03-03 | 苏州中来太阳能材料技术有限公司 | Solar battery back film with high cohesiveness and processing process |
| CN101783369A (en) * | 2010-01-29 | 2010-07-21 | 联合金属科技(杭州)有限公司 | High-fluoride mixcrystal coating solar-energy photovoltaic cell back film and manufacturing method thereof |
| CN103646980A (en) * | 2013-12-24 | 2014-03-19 | 江苏金瑞晨新材料有限公司 | Back film having ultraviolet conversion function |
| WO2017032377A1 (en) * | 2015-08-27 | 2017-03-02 | Axmetic-Engineering V/ Jan Mahler | A method for manufacturing a solar cell panel and a solar cell panel manufactured using such a method |
| CN107564984A (en) * | 2017-07-18 | 2018-01-09 | 苏州中来光伏新材股份有限公司 | A kind of high durable, high-gain solar cell backboard, component and preparation method |
| CN114097096A (en) * | 2019-07-15 | 2022-02-25 | 韩华道达尔有限公司 | Solar energy conversion material, solar cell package including the same, and solar cell including the same |
| CN111718661A (en) * | 2020-06-09 | 2020-09-29 | 苏州福斯特光伏材料有限公司 | Gridding packaging adhesive film and preparation method thereof |
| CN212517224U (en) * | 2020-10-28 | 2021-02-09 | 苏州易昇光学材料有限公司 | Transparent solar backboard with light conversion function |
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