CN115295459A - Electrostatic chuck heating member manufacturing process, electrostatic chuck manufacturing process, and electrostatic chuck - Google Patents
Electrostatic chuck heating member manufacturing process, electrostatic chuck manufacturing process, and electrostatic chuck Download PDFInfo
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- CN115295459A CN115295459A CN202211033955.8A CN202211033955A CN115295459A CN 115295459 A CN115295459 A CN 115295459A CN 202211033955 A CN202211033955 A CN 202211033955A CN 115295459 A CN115295459 A CN 115295459A
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 66
- 239000000463 material Substances 0.000 claims abstract description 68
- 229910052751 metal Inorganic materials 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims description 26
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 20
- 238000002844 melting Methods 0.000 claims description 16
- 230000008018 melting Effects 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 12
- 229910052786 argon Inorganic materials 0.000 claims description 10
- 239000007921 spray Substances 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 8
- 238000007500 overflow downdraw method Methods 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 230000003746 surface roughness Effects 0.000 claims description 4
- 238000003466 welding Methods 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 2
- 238000000227 grinding Methods 0.000 claims description 2
- 150000002431 hydrogen Chemical class 0.000 claims description 2
- 230000008646 thermal stress Effects 0.000 abstract description 7
- 238000005336 cracking Methods 0.000 abstract description 5
- 238000007789 sealing Methods 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 description 14
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 238000007751 thermal spraying Methods 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
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- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005524 ceramic coating Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
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- 239000008358 core component Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
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- 238000001312 dry etching Methods 0.000 description 1
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- 238000010304 firing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a manufacturing process of an electrostatic chuck heating element, a manufacturing process of an electrostatic chuck and the electrostatic chuck; the invention relates to a manufacturing process of an electrostatic chuck heating element, which is characterized in that when a metal base material of an electrostatic chuck is manufactured, the metal base material is divided into two layers, a groove is arranged on the surface of one layer, and heating pipes are distributed in the groove; fastening the two layers of base materials to enable the other layer to cover the surface of the groove, and sealing the heating pipe in the groove; the electrostatic chuck manufactured by the heating component manufacturing process of the electrostatic chuck can be manufactured by a simpler process, the manufacturing cost of the electrostatic chuck can be reduced, meanwhile, the thermal stress possibly generated when the electrostatic chuck is used at a high temperature can be reduced, and the possibility of cracking caused by the thermal stress in the using process is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a manufacturing process of an electrostatic chuck heating element, a manufacturing process of an electrostatic chuck and the electrostatic chuck.
Background
The electrostatic chuck is widely applied in the manufacturing process of chips and is a core component of equipment such as ion implantation, dry etching, physical Vapor Deposition (PVD), chemical Vapor Deposition (CVD) and the like; electrostatic chucks generally provide the following functions: as a base station for fixing the wafer, by applying a direct current voltage to the electrostatic chuck, an electrostatic adsorption force can be generated between the electrostatic chuck and the wafer, thereby fixing the wafer; the energy of ions in the plasma is controlled, and the energy of the ions reaching a wafer can be controlled by loading an RF voltage on the electrostatic chuck; in some processes, it is necessary to dissipate the heat on the wafer through the electrostatic chuck in time to prevent the wafer from overheating. In some processes, the wafer is heated by the electrostatic chuck to reach the desired temperature for the process.
The structure of the electrostatic chuck with the heating function is generally shown in figure 1, and the electrostatic chuck comprises a metal base material, a first insulating layer, a resistance wire layer, a second insulating layer, an electrode layer, a third insulating layer, a lift-pin hole, an electrode joint and other auxiliary structures from bottom to top; the first insulating layer, the second insulating layer and the third insulating layer are made of ceramic, the resistance wire layer is made of high-temperature-resistant metal such as tungsten and molybdenum, the electrode layer is made of a wide range of materials such as tungsten, molybdenum, silver and copper, and the melting point of the metal is required to be sufficiently higher than the use temperature of the electrostatic chuck; when the device is used, a wafer is placed on the surface of the electrostatic chuck, the electrode layer is connected with high voltage of 0.5-5KV to generate electrostatic adsorption force between the electrode layer and the wafer, and the positive electrode and the negative electrode of the resistance wire layer are connected with another power supply to generate heat.
At present, the following methods are commonly used for manufacturing the electrostatic chuck with the heating function:
the first method comprises the following steps: the resistance wire layer and the electrode layer are embedded in the ceramic powder, and the ceramic powder is hardened by molding and sintering. The sintered ceramic is made into a disc and then fixed on a metal base material in a glue adhesion mode and the like.
And the second method comprises the following steps: preparing paste by using ceramic powder, preparing the paste into a layered blank, respectively placing a resistance wire layer and an electrode layer on two layers of the layered blank, sintering and curing the blank to prepare a disc, and finally fixing the disc on a metal base material in a glue adhesion mode and the like.
And the third is that: the method comprises the steps of manufacturing an upper ceramic disk, a middle ceramic disk and a lower ceramic disk by a sintering method, manufacturing an electrode layer and a resistance wire layer on the upper surface and the lower surface of the middle ceramic disk respectively in a coating mode, and then adhering the 3 ceramic disks together and to a metal base material by special glue.
And fourthly: and sequentially manufacturing a first insulating layer, a resistance wire layer, a second insulating layer, an electrode layer and a resistance wire layer on the metal base material in a plasma fusion jetting mode.
In the manufacturing process, the first to third processes are adopted to manufacture the ceramic in a sintering mode, the sintered ceramic has high strength and high temperature resistance, but the sintering process of the ceramic is complex and has high requirements on equipment, so that the manufacturing cost of the electrostatic chuck is high; however, the ceramic coating formed by the thermal spraying has low strength, and is easy to crack due to the accumulation of thermal stress (due to the difference of the thermal expansion coefficients of the coating and the base material) in the using process, especially in the place where the ceramic lining needs to be plugged, such as an electrode interface.
It should be noted that the above background description is only for the sake of clarity and complete description of the technical solutions of the present invention and for the understanding of those skilled in the art. Such solutions are not considered to be known to the person skilled in the art merely because they have been set forth in the background section of the invention.
Disclosure of Invention
In order to overcome the above disadvantages, the present invention provides a manufacturing process of an electrostatic chuck heating element, an electrostatic chuck manufacturing process, and an electrostatic chuck, wherein a metal substrate of the electrostatic chuck is manufactured by using the electrostatic chuck heating element manufacturing process, and then the electrostatic chuck is manufactured by combining the overall manufacturing process of the electrostatic chuck, and the electrostatic chuck with a heating function is manufactured by using a simpler process, thereby solving the technical problem of high manufacturing cost in the conventional manufacturing process, reducing thermal stress possibly generated when the electrostatic chuck is used at a high temperature, and solving the technical problem of cracking caused by the accumulation of thermal stress in the conventional manufacturing process.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
the scheme provides a manufacturing process of an electrostatic chuck heating element, which comprises the following steps:
when the electrostatic chuck metal base material is manufactured, the metal base material is divided into two layers, a groove is formed in the surface of one layer, heating pipes are arranged in the groove, the two layers of base materials are fastened, the surface of the groove is covered with the other layer, and the heating pipes are sealed in the groove.
According to the manufacturing process of the electrostatic chuck heating element, the heating pipe is buried in the metal base material in a mode of arranging the groove and is arranged on the electrostatic chuck as a heating component, the manufacturing process is simple and reliable, the electrostatic chuck has a heating function, and meanwhile, the manufacturing cost is low; when fabricating an electrostatic chuck, the ceramic material for the meltallizing needs to be alumina to reduce cracking that should be caused by differences in the coefficients of thermal expansion.
Further, the metal base material is made of a titanium alloy material, and the heating pipe is made of a flexible heating pipe; the purpose of adopting flexible heating pipe is easily become the shape of slot in the substrate with the heating pipe dish, conveniently puts the heating pipe in the slot, and the resistance value of heating pipe is 2-15 omega.
Further, the edges of the two layers of base materials are fastened by screws, the screws enter from the surface of the lower layer of base material, penetrate through the lower layer of base material and then enter the upper layer of base material, and the screws cannot penetrate through the surface of the upper layer of base material; the edges of the upper and lower layers of base materials are fastened by screws, but the screws cannot penetrate through the surface of the upper layer of base material, so that the influence on the subsequent meltallizing of the insulating layer is avoided.
Further, the two layers of base materials can be fastened by adopting an electronic welding mode.
The scheme also provides a manufacturing process of the electrostatic chuck, which comprises the following steps:
manufacturing a metal substrate by adopting the manufacturing process of the electrostatic chuck heating element;
and manufacturing a first insulating layer, wherein the first insulating layer is manufactured on the upper surface of the metal base material by adopting a plasma melting method.
Manufacturing an electrode layer, namely manufacturing the electrode layer on the surface of the first insulating layer by adopting a plasma fusion method;
and manufacturing a second insulating layer, and manufacturing the second insulating layer on the surface of the electrode layer by adopting a plasma fusion method.
According to the manufacturing process of the electrostatic chuck, the manufacturing process of the heating assembly of the electrostatic chuck is adopted when the metal base material is manufactured, so that the manufacturing process is simple and reliable, the electrostatic chuck has a heating function, and meanwhile, the manufacturing cost is low; meanwhile, in the scheme, the metal base material is titanium alloy, the meltallizing material of the first insulating layer and the second insulating layer is aluminum oxide, the two have similar thermal expansion coefficients (both are close to 8x10 < -6 >/K), and meanwhile, because the heating pipe is embedded in the base material, the thickness of the coating on the base material can be reduced, the thermal stress generated between the base material and the insulating layer in a high-temperature use environment can be effectively reduced, and the cracking possibility of the insulating layer can be remarkably reduced.
Furthermore, the material of the first insulating layer is alumina with the purity of more than 99.99%, the distance between a melting gun and the surface of the metal base material is 10-20mm during melting and spraying, the power of melting and spraying is 30-50kW, the gas for generating plasma is argon gas and hydrogen gas, the flow rates of the argon gas and the hydrogen gas are 20-50NLPM and 3-5NLPM respectively, and the melting and spraying thickness of the first insulating layer is 200-500 μm.
Furthermore, the material of the second insulating layer is alumina with the purity of more than 99.99 percent, the distance between a melting spray gun and the surface of the base material is 10-20mm during melting spray, the melting spray power is 30-50kW, the gases for generating plasma are argon and hydrogen, the flow rates of the argon and the hydrogen are 20-50NLPM and 3-5NLPM respectively, and the melting spray thickness of the second insulating layer is 400-600 mu m.
Further, after the second insulating layer is manufactured, grinding the surface of the second insulating layer after being subjected to the meltallizing, and finally polishing; therefore, when the wafer is placed on the electrostatic chuck, the wafer and the electrostatic chuck have good heat conduction, and the service efficiency of the electrostatic chuck is improved.
Further, when the surface of the second insulating layer after the meltallizing is polished, the thickness of the second insulating layer after the polishing is reduced to 300 to 500 μm, and when the surface of the second insulating layer is polished, the surface roughness of the second insulating layer is reduced to 0.3 μm or less.
This scheme still provides an electrostatic chuck, adopts the electrostatic chuck that above-mentioned electrostatic chuck preparation technology was made and is formed, electrostatic chuck from down and include metal substrate, first insulation layer, electrode layer and second insulating layer in proper order, metal substrate divide into two-layerly, offers the slot on the surface of one of them layer, and set up the heating pipe in the slot.
Drawings
Fig. 1 is a structure of a conventional electrostatic chuck with a heating function.
Fig. 2 is a schematic view of the structure of the groove and the heating tube in the metal substrate according to an embodiment of the invention.
Fig. 3 is an electrostatic chuck structure according to an embodiment of the invention.
In the figure: 1. a metal substrate; 2. heating a tube; 3. a trench; 4. a first insulating layer; 5. an electrode layer; 6. a second insulating layer.
Detailed Description
The following detailed description of the preferred embodiments of the present invention, taken in conjunction with the accompanying drawings, will make the advantages and features of the present invention more comprehensible to those skilled in the art, and will thus provide a clear and concise definition of the scope of the present invention.
Referring to fig. 2-3, an embodiment of the invention discloses a process for manufacturing an electrostatic chuck, which comprises the following steps:
the first step is as follows: manufacturing a metal base material 1, wherein when the metal base material 1 of the electrostatic chuck is manufactured, as shown in fig. 2, the metal base material 1 is divided into two layers, a groove 3 is formed in the surface of one layer, heating pipes 2 are distributed in the groove 3, the two layers of base materials are fastened, the surface of the groove 3 is covered by the other layer, and the heating pipes 2 are sealed in the groove 3;
the second step is that: manufacturing a first insulating layer 4, and manufacturing the first insulating layer 4 on the upper surface of the metal base material 1 by adopting a plasma fusion method, wherein the first insulating layer 4 is made of an aluminum oxide material;
the third step: preparing an electrode layer 5, and preparing the electrode layer 5 on the surface of the first insulating layer 4 by adopting a plasma fusion method;
the fourth step: and manufacturing a second insulating layer 6, and manufacturing the second insulating layer 6 on the surface of the electrode layer 5 by adopting a plasma melting method, wherein the second insulating layer 6 is made of an alumina material.
According to the manufacturing process of the electrostatic chuck disclosed by the embodiment, when the metal base material 1 is manufactured, the heating pipe 2 is buried in the metal base material 1 in a mode of arranging the groove 3 and is arranged on the electrostatic chuck as a heating component, the manufacturing process is simple and reliable, the electrostatic chuck has a heating function, and meanwhile, the manufacturing cost is low; in addition, in this embodiment, the metal substrate 1 is made of titanium alloy, the first insulating layer 4 and the second insulating layer 6 are made of aluminum oxide, and both have similar thermal expansion coefficients (both are close to 8x 10-6/K), and meanwhile, since the heating tube 2 is embedded in the substrate, the thickness of the coating on the substrate can be reduced, so that the thermal stress generated between the substrate and the insulating layer in a high-temperature use environment can be effectively reduced, and the cracking possibility of the insulating layer can be remarkably reduced.
On the basis of the above embodiment, preferably, the heating pipe 2 is a flexible heating pipe;
the purpose of adopting flexible heating pipe 2 is easily coiled heating pipe 2 into the shape of slot 3 in the substrate, conveniently puts heating pipe 2 into slot 3. The resistance value of the heating tube 2 is 2-15 omega.
On the basis of the above embodiment, specifically, the groove 3 is shaped as a concentric circle from inside to outside, and the heating pipe 2 is a coil pipe corresponding to the shape of the groove 3.
The grooves 3 are concentric and have 4-12 circles, and the heating pipes 2 are corresponding coils.
On the basis of the above embodiment, preferably, the grooves 3 are provided with one or two groups, when the grooves 3 are provided with one group, the heating pipes 2 are arranged in the grooves 3, when the grooves 3 are provided with two groups, the grooves 3 are provided with one group of inner rings and one group of outer rings, and meanwhile, the independent heating pipes 2 are correspondingly arranged in each group of grooves 3.
The purpose of adopting two groups of heating pipes 2 is to independently control the heating power of the inner ring and the outer ring, thereby improving the uniformity of the surface temperature of the electrostatic chuck.
On the basis of the above embodiment, specifically, the diameter of the heating pipe 2 is smaller than the depth and width of the groove 3.
In order to ensure that the heating tube 2 can be buried inside the groove 3, the diameter of the heating tube 2 needs to be slightly smaller than the depth and width of the groove 3.
On the basis of the above embodiment, preferably, the edges of the two-layer substrate are fastened with screws that enter from the surface of the lower substrate and pass through the lower substrate and then enter the upper substrate, the screws not being able to penetrate the surface of the upper substrate.
The edges of the upper and lower layers of base materials are fastened by screws, but the screws cannot penetrate through the surface of the upper layer of base material, so that the influence on the subsequent meltallizing of the insulating layer is avoided.
On the basis of the above embodiment, preferably, the two base materials can also be fastened by means of electronic welding.
On the basis of the above embodiment, it is preferable that the upper surface of the metal base material 1 is sandblasted to increase the surface roughness to 2 to 3 μm, the sandblasting material is 40# to 60# white corundum, and the sandblasting pressure is 0.6 to 1MPa before the first insulating layer 4 is formed.
Because the first insulating layer 4 is manufactured by adopting a plasma meltallizing method, the surface of the metal base material 1 is sandblasted to increase the roughness, so that the adhesive force of a subsequent meltallizing coating can be increased.
In addition to the above embodiments, specifically, the material of the first insulating layer 4 is alumina having a purity of 99.99% or more, the distance between the torch and the surface of the metal base material 1 at the time of the meltallizing is 10 to 20mm, the power of the meltallizing is 30 to 50kW, the gases for generating plasma are argon gas and hydrogen gas, the flow rates of both are 20 to 50NLPM and 3 to 5NLPM, respectively, and the meltallizing thickness of the first insulating layer 4 is 200 to 500 μm.
In addition to the above embodiments, the electrode layer 5 is made of tungsten or molybdenum with a purity of 99.9% or more, and has a thickness of 30 to 50 μm.
In addition to the above-described embodiments, specifically, the material of the second insulating layer 6 is alumina having a purity of 99.99% or more, the distance between the thermal spray gun and the surface of the base material at the time of thermal spraying is 10 to 20mm, the power of thermal spraying is 30 to 50kW, the gas for generating plasma is argon gas and hydrogen gas, the flow rates of both are 20 to 50NLPM and 3 to 5NLPM, respectively, and the thermal spraying thickness of the second insulating layer 6 is 400 to 600 μm.
In addition to the above embodiment, it is preferable that after the second insulating layer 6 is formed, the surface of the second insulating layer 6 after the meltallizing is ground and finally polished.
The surface of the second insulating layer 6 is ground and polished, so that the wafer can be placed on the electrostatic chuck, the wafer and the electrostatic chuck have good heat conduction, and the service efficiency of the electrostatic chuck is improved.
In addition to the above embodiment, specifically, when the surface of the second insulating layer 6 after the firing is polished, the thickness of the second insulating layer 6 after the polishing is reduced to 300 to 500 μm, and when the polishing is performed, the surface roughness of the second insulating layer 6 is 0.3 μm or less.
Another embodiment of the present invention discloses an electrostatic chuck, as shown in fig. 3, which comprises a metal substrate 1, a first insulating layer 4, an electrode layer 5 and a second insulating layer 6 in sequence from bottom to top; as shown in fig. 2, the metal substrate 1 is divided into an upper layer and a lower layer, wherein a groove 3 is formed in one layer of the substrate, and a heating pipe 2 is embedded in the groove 3, so as to form a heating assembly, and thus the electrostatic chuck has a heating function.
The above embodiments are merely illustrative of the technical concept and features of the present invention, and the present invention is not limited thereto, and any equivalent changes or modifications made according to the spirit of the present invention should be included in the scope of the present invention.
Claims (10)
1. A manufacturing process of an electrostatic chuck heating element is characterized in that: the method comprises the following steps:
when the metal base material of the electrostatic chuck is manufactured, the metal base material is divided into two layers, a groove is formed in the surface of one layer, the heating pipes are arranged in the groove, the two layers of base materials are fastened, the other layer of base material covers the surface of the groove, and the heating pipes are sealed in the groove.
2. The electrostatic chuck heating element fabrication process of claim 1, wherein: the metal base material is made of a titanium alloy material, and the heating pipe is made of a flexible heating pipe.
3. The electrostatic chuck heating element fabrication process of claim 1, wherein: the edges of the two layers of substrates are fastened by screws, the screws enter from the surface of the lower layer of substrates, penetrate through the lower layer of substrates and then enter the upper layer of substrates, and the screws cannot penetrate through the surface of the upper layer of substrates.
4. The electrostatic chuck heating element fabrication process of claim 1, wherein: the two layers of base materials can be fastened in an electronic welding mode.
5. An electrostatic chuck manufacturing process is characterized in that: the method comprises the following steps:
forming a metal substrate by using the electrostatic chuck heating element forming process according to any one of claims 1 to 7;
manufacturing a first insulating layer, wherein the first insulating layer is manufactured on the upper surface of the metal base material by adopting a plasma fusion method, and is made of an aluminum oxide material;
manufacturing an electrode layer, namely manufacturing the electrode layer on the surface of the first insulating layer by adopting a plasma fusion method;
and manufacturing a second insulating layer, wherein the second insulating layer is manufactured on the surface of the electrode layer by adopting a plasma melting method, and the second insulating layer is made of an aluminum oxide material.
6. The electrostatic chuck fabrication process of claim 5, wherein: the material of the first insulating layer is alumina with the purity of more than 99.99 percent, the distance between a melting gun and the surface of the metal base material is 10-20mm during melting and spraying, the power of melting and spraying is 30-50kW, the gas for generating plasma is argon gas and hydrogen gas, the flow rates of the argon gas and the hydrogen gas are 20-50NLPM and 3-5NLPM respectively, and the melting and spraying thickness of the first insulating layer is 200-500 mu m.
7. The electrostatic chuck fabrication process of claim 5, wherein: the material of the second insulating layer is alumina with the purity of more than 99.99 percent, the distance between a spray gun and the surface of the base material is 10-20mm during spray, the spray power is 30-50kW, the gases for generating plasma are argon and hydrogen, the flow rates of the argon and the hydrogen are 20-50NLPM and 3-5NLPM respectively, and the spray thickness of the second insulating layer is 400-600 mu m.
8. The electrostatic chuck fabrication process of claim 5, wherein: and after the second insulating layer is manufactured, grinding the surface of the second insulating layer subjected to the meltallizing, and finally polishing.
9. The electrostatic chuck fabrication process of claim 8, wherein: when the surface of the second insulating layer after the meltallizing is polished, the thickness of the second insulating layer after the polishing is reduced to 300-500 μm, and when the surface of the second insulating layer is polished, the surface roughness of the second insulating layer is less than 0.3 μm.
10. An electrostatic chuck, characterized by: the electrostatic chuck manufactured by the manufacturing process of any one of the electrostatic chucks of claims 5 to 9, which comprises a metal base material, a first insulating layer, an electrode layer and a second insulating layer in sequence from bottom to top, wherein the metal base material is divided into two layers, a groove is formed in the surface of one layer, and a heating pipe is arranged in the groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211033955.8A CN115295459A (en) | 2022-08-26 | 2022-08-26 | Electrostatic chuck heating member manufacturing process, electrostatic chuck manufacturing process, and electrostatic chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211033955.8A CN115295459A (en) | 2022-08-26 | 2022-08-26 | Electrostatic chuck heating member manufacturing process, electrostatic chuck manufacturing process, and electrostatic chuck |
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| Publication Number | Publication Date |
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| CN115295459A true CN115295459A (en) | 2022-11-04 |
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| CN202211033955.8A Pending CN115295459A (en) | 2022-08-26 | 2022-08-26 | Electrostatic chuck heating member manufacturing process, electrostatic chuck manufacturing process, and electrostatic chuck |
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| CN (1) | CN115295459A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09205134A (en) * | 1996-01-23 | 1997-08-05 | Souzou Kagaku:Kk | Electrostatic chuck |
| JP2001007189A (en) * | 1999-06-24 | 2001-01-12 | Shin Etsu Chem Co Ltd | Electrostatic chuck and its manufacture |
| JP2001077185A (en) * | 1999-09-01 | 2001-03-23 | Shin Etsu Chem Co Ltd | Electrostatic chuck and its manufacture |
| TW200807612A (en) * | 2006-07-27 | 2008-02-01 | Terasemicon Co Ltd | Semiconductor manufacturing device and method |
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2022
- 2022-08-26 CN CN202211033955.8A patent/CN115295459A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09205134A (en) * | 1996-01-23 | 1997-08-05 | Souzou Kagaku:Kk | Electrostatic chuck |
| JP2001007189A (en) * | 1999-06-24 | 2001-01-12 | Shin Etsu Chem Co Ltd | Electrostatic chuck and its manufacture |
| JP2001077185A (en) * | 1999-09-01 | 2001-03-23 | Shin Etsu Chem Co Ltd | Electrostatic chuck and its manufacture |
| TW200807612A (en) * | 2006-07-27 | 2008-02-01 | Terasemicon Co Ltd | Semiconductor manufacturing device and method |
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