CN115287635A - Method and device for performing MPCVD (multi-phase chemical vapor deposition) on inner surface of tubular material - Google Patents
Method and device for performing MPCVD (multi-phase chemical vapor deposition) on inner surface of tubular material Download PDFInfo
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- CN115287635A CN115287635A CN202210963517.5A CN202210963517A CN115287635A CN 115287635 A CN115287635 A CN 115287635A CN 202210963517 A CN202210963517 A CN 202210963517A CN 115287635 A CN115287635 A CN 115287635A
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- 239000000463 material Substances 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000005229 chemical vapour deposition Methods 0.000 title claims description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 76
- 239000002184 metal Substances 0.000 claims abstract description 76
- 238000000151 deposition Methods 0.000 claims abstract description 29
- 239000011248 coating agent Substances 0.000 claims abstract description 12
- 238000000576 coating method Methods 0.000 claims abstract description 12
- 238000000259 microwave plasma-assisted chemical vapour deposition Methods 0.000 claims abstract 12
- 229910003460 diamond Inorganic materials 0.000 claims description 33
- 239000010432 diamond Substances 0.000 claims description 33
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 11
- 230000002457 bidirectional effect Effects 0.000 claims description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 8
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 8
- 239000007769 metal material Substances 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052702 rhenium Inorganic materials 0.000 claims description 3
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 230000008021 deposition Effects 0.000 abstract description 26
- 239000000919 ceramic Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 239000007789 gas Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a method and a device for performing MPCVD on the inner surface of a tubular material, comprising the following steps: the pipe fitting comprises an operating platform, wherein a supporting block is arranged on the upper surface of the operating platform, a pipe is placed on the upper surface of the operating platform, a metal wire penetrates through the pipe, a metal thorn is arranged on the surface of the metal wire, the metal wire is connected with the side surface of the supporting block, a guide block is connected with the side surface of the supporting block, and a guide rod penetrates through the inside of the guide block. According to the method and the device for performing MPCVD on the inner surface of the tubular material, the tubular material is placed on the surface of an operation table, the metal wire drives the metal prick to penetrate through the inside of the tubular material and be connected to the surface of the supporting block, then the threaded rod can be rotated, the threaded rod can be rotated to adjust the height of the supporting block through the threaded groove, the supporting block can drive the metal wire to perform longitudinal motion, and when the position of the metal wire is located at the position of the transverse central axis of the tubular material, uniform deposition coating can be performed on the inner wall of the tubular material conveniently.
Description
Technical Field
The invention relates to the technical field of microwave plasma chemical vapor deposition, in particular to a method and a device for performing MPCVD on the inner surface of a tubular material.
Background
The MPCVD refers to microwave plasma chemical vapor deposition, the MPCVD technology is the most widely applied method for preparing single-crystal diamond at home and abroad at present, and the MPCVD is considered to be the most ideal method for preparing artificial diamond in the future because the large-area and high-quality diamond can be prepared, and the domestic level is also in the starting stage;
the microwave plasma chemical vapor deposition device generally comprises a microwave system, a vacuum system, a gas supply system and a plasma reaction chamber, wherein a self-rotating operation table is arranged in the plasma reaction chamber, when microwaves generated in the microwave system enter the plasma reaction chamber, gas provided by the gas supply system is excited above the self-rotating operation table to generate a plasma ball, the plasma ball is tightly attached to the surface of a film forming substrate material, and a diamond film can be deposited on the surface of a substrate table by adjusting different reaction gases and adjusting the process parameters of the plasma.
When the existing MPCVD device carries out coating deposition on the inner surface of a tubular material, generally, a metal wire is introduced and a metal thorn is bound on the metal wire, the metal thorn can utilize the phenomenon that the metal material is easy to generate point discharge in a microwave field, and can locally generate higher electric field concentration under lower microwave energy density, so that microwave discharge is generated at the metal point, active plasma required by coating is generated, and coating is deposited on the inner surface of the tubular material.
Technical upgrades are required to meet market demands in response to the above problems.
Disclosure of Invention
The invention aims to provide a method and a device for performing MPCVD on the inner surface of a tubular material, so as to solve the problems that the height of a metal wire of the existing device in the background art is fixed, and when the metal wire is not positioned at the position of a transverse central axis of the device, the inner wall of a pipe cannot be uniformly deposited and coated, so that the device can only uniformly deposit and coat the pipe with a fixed size, and the use of the device is inconvenient.
In order to achieve the purpose, the invention provides the following technical scheme: an apparatus for MPCVD on an inner surface of a tubular material, comprising: the operating table is characterized in that a supporting block is arranged on the upper surface of the operating table, a pipe is placed on the upper surface of the operating table, and a metal wire penetrates through the pipe.
Preferably, the surface of the metal wire is provided with a metal prick, the metal wire is connected with the side surface of the supporting block, the side surface of the supporting block is connected with a guide block, a guide rod penetrates through the inside of the guide block, and the guide rod is connected with the upper surface of the operating platform.
Preferably, a first bearing is installed in the operating platform in an embedded mode, a threaded rod penetrates through the first bearing, and a threaded groove is formed in the bottom side surface, close to the threaded rod, of the supporting block.
Preferably, sliding connection is adopted between the guide block and the guide rod, a rotating structure is formed between the threaded rod and the first bearing, and threaded connection is adopted between the threaded rod and the thread groove.
Preferably, a strip-shaped groove is formed in the upper surface of the operating platform, a connecting block is connected inside the strip-shaped groove, and a limiting block is connected to the upper surface of the connecting block.
Preferably, the connecting block is provided with two sets ofly in the inside of bar groove, be sliding connection between connecting block and the bar groove, the stopper look sideways at the longitudinal section and be triangle-shaped.
Preferably, the lower surfaces of the two connecting blocks are connected with threaded sleeves, two-way screw rods penetrate through the threaded sleeves, and bearing seats are installed between the two-way screw rods and the operating platform.
Preferably, the bidirectional screw rod is in threaded connection with the threaded sleeve, and a rotating structure is arranged between the bidirectional screw rod and the bearing seat.
A method for MPCVD on an inner surface of a tubular material, comprising the steps of:
s1: placing the pipe, namely firstly placing the pipe on the upper surface of an operation table of microwave plasma;
s2: the pipe is limited, the position of the limiting block is adjusted by rotating the bidirectional screw rod, and then the position of the pipe is limited by the limiting block;
s3: threading the pipe, namely threading a metal wire with a metal thorn from the inside of the pipe and connecting the metal wire with the metal thorn to the surface of the other supporting block;
s4: adjusting the height of the metal wire, namely adjusting the height of the supporting block by rotating the threaded rod until the supporting block adjusts the metal wire to the position of the central axis of the pipe;
s5: and (3) coating the inner wall of the pipe, opening the microwave plasma chemical vapor deposition device, and depositing and coating the inner wall of the pipe.
Preferably, the pipe and the supporting block are made of high-temperature-resistant ceramic materials, the supporting block is made of aluminum oxide or silicon carbide materials, the metal wires and the metal spines are made of high-temperature-resistant metal materials, the metal wires and the metal spines are made of tungsten, molybdenum or rhenium materials, and a diamond film with uniform thickness is deposited on the inner wall of the pipe.
Compared with the prior art, the invention has the beneficial effects that:
after a pipe is placed on the surface of an operation table, a metal wire drives a metal prick to penetrate through the inside of the pipe and be connected to the surface of a supporting block, then a threaded rod can be rotated, the threaded rod can be rotated to adjust the height of the supporting block through a threaded groove, the supporting block can drive the metal wire to longitudinally move, and when the position of the metal wire is located at the position of a transverse central axis of the pipe, uniform deposition coating can be conveniently carried out on the inner wall of the pipe;
2, place tubular product between two supporting shoes of operation panel upper surface, then can rotate two-way lead screw, can drive the thread bush when two-way lead screw rotates and carry out lateral motion, thread bush lateral motion can drive the stopper through the connecting block and carry out lateral motion, and when stopper lateral motion reached the surface of tubular product, can carry out spacingly through tubular product to tubular product, can prevent the skew of emergence position in the tubular product course of working like this.
Drawings
FIG. 1 is a schematic view of the external structure of the present invention;
FIG. 2 is a schematic front view of a cross-sectional structure of the present invention;
FIG. 3 is a schematic side sectional view of the present invention;
FIG. 4 is a schematic view of an adjustment mechanism of the present invention;
FIG. 5 is a schematic flow chart of the present invention;
FIG. 6 is a graph showing the thickness distribution of the diamond film deposited on the inner surface of the ceramic tube according to example 1 of the present invention;
FIG. 7 is a graph showing the thickness distribution of a diamond film deposited on the inner surface of a ceramic tube according to comparative example 1 of the present invention;
FIG. 8 is a thickness distribution of a diamond film deposited on the inner surface of a ceramic tube according to example 2 of the present invention;
FIG. 9 is a graph showing the thickness distribution of a diamond film deposited on the inner surface of a ceramic tube according to comparative example 2 of the present invention.
In the figure: 1. an operation table; 2. a support block; 3. a pipe; 4. a metal wire; 5. metal pricks; 6. a guide block; 7. a guide bar; 8. a first bearing; 9. a threaded rod; 10. a thread groove; 11. a strip-shaped groove; 12. connecting blocks; 13. a limiting block; 14. a threaded sleeve; 15. a bidirectional screw rod; 16. and a bearing seat.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-9, the present invention provides a technical solution: an apparatus for MPCVD on an inner surface of a tubular material, comprising: operation panel 1, the upper surface of operation panel 1 is provided with supporting shoe 2, tubular product 3 has been placed to the upper surface of operation panel 1, tubular product 3's inside has run through wire 4, the surface mounting of wire 4 has metal thorn 5, the side surface of supporting shoe 2 is being connected to wire 4, the side surface of supporting shoe 2 is connected with guide block 6, guide bar 7 has been run through to guide block 6's inside, guide bar 7 is connected at the upper surface of operation panel 1, first bearing 8 is installed to the inside gomphosis of operation panel 1, the inside through connection of first bearing 8 has threaded rod 9, threaded groove 10 has been seted up on the bottom side surface of supporting shoe 2 near threaded rod 9, be sliding connection between guide block 6 and the guide bar 7, constitute revolution mechanic between threaded rod 9 and the first bearing 8, be threaded connection between threaded rod 9 and the threaded groove 10.
A method for MPCVD on the inner surface of a tubular material, comprising the steps of:
s1: placing a pipe 3, namely firstly placing the pipe 3 on the upper surface of an operating table 1 of microwave plasma;
s2: the pipe 3 is limited, the position of the limiting block 13 is adjusted by rotating the bidirectional screw rod 15, and then the position of the pipe 3 is limited by the limiting block 13;
s3: threading the pipe 3, and passing a metal wire 4 with a metal spine 5 through the pipe 3 and connecting the metal wire to the surface of the other supporting block 2;
s4: adjusting the height of the metal wire 4, namely adjusting the height of the supporting block 2 by rotating the threaded rod 9 until the supporting block 2 adjusts the metal wire 4 to the position of the central axis of the pipe 3;
s5: and (3) coating the inner wall of the pipe 3, opening the microwave plasma chemical vapor deposition device, and depositing and coating the inner wall of the pipe 3.
The pipe 3 and the supporting block 2 are made of high-temperature-resistant ceramics, the supporting block 2 is made of aluminum oxide or silicon carbide, the metal wires 4 and the metal spines 5 are made of high-temperature-resistant metal materials, the metal wires 4 and the metal spines 5 are made of tungsten, molybdenum or rhenium, and a diamond film with uniform thickness is deposited on the inner wall of the pipe 3.
Example 1:
the diameter of the operating platform 1 is 60 mm; wherein the silicon carbide tube 3 has an outer diameter of 16.0 mm, an inner diameter of 10.0 mm and a length of 20.0 mm; the diameter of the metal wire 4 made of tungsten wire is 1.0 mm, the diameter of the metal spine 5 bound with the tungsten wire at the specified position is 0.5 mm, two ends of the tungsten wire with the diameter of 0.5 mm are perpendicular to the metal tungsten wire with the diameter of 1.0 mm to form a metal tip, and silicon chips are superposed at the two ends to form a ceramic support.
The deposition process parameters of the diamond film are as follows: 3500W of microwave power, 9.5kPa of deposition gas pressure, 200 of flow ratio of H2 to CH4, 2.0sccm of deposition temperature, 850 ℃ of deposition time and 8.0h of deposition time. Note: sccm: standard cubic centimeters per minute.
The results were: and testing the deposition result of the diamond film on the inner surface of the silicon carbide pipe 3 to obtain the thickness distribution curve of the diamond film on the inner surface of the pipe 3, wherein the diamond film deposition is on the inner surface of the pipe 3 as shown in figure 6.
Comparative example 1:
the diameter of the operating platform 1 is 60 mm; wherein the silicon carbide tube 3 has an outer diameter of 16.0 mm, an inner diameter of 10.0 mm, and a length of 20.0 mm. In this comparative example, the deposition of the diamond film was directly performed without using the metal wire 4.
The deposition process parameters of the diamond film are as follows: 3500W of microwave power, 9.5kPa of deposition gas pressure, 200 of flow ratio of H2 to CH4, 2.0sccm of deposition temperature, 840 ℃ of deposition time, and 8.0h of deposition time.
The results were: and testing the deposition result of the diamond film on the inner surface of the silicon carbide pipe 3 to obtain the thickness distribution curve of the diamond film on the inner surface of the pipe 3, which is shown in figure 7. Except that the two ends of the interior of the tubular product 3 are close to the port parts, diamond films are deposited, and no diamond film is deposited at other interior positions.
It can be seen from the results of comparative example 1 and comparative example 1 that the metal wire 4 is disposed in the polysilicon ceramic hole, and the metal pin 5 is bound to the metal wire 4 to deposit a diamond film in the microwave plasma.
Example 2
The diameter of the operating platform 1 is 60 mm; wherein the outer diameter of the polysilicon pipe 3 is 16.0 mm; and has an inner diameter of 10.0 mm and a length of 20.0 mm; the metal wire 4 made of tungsten wire is 1.0 mm in diameter, the metal spine 5 is bound at the specified position on the metal wire, the tungsten wire with the diameter of 0.5 mm is arranged on the metal spine, two ends of the tungsten wire with the diameter of 0.5 mm are perpendicular to the metal tungsten wire with the diameter of 1.0 mm to form a metal tip, and silicon wafers are superposed at the two ends to form a ceramic support.
The deposition process parameters of the diamond film are as follows: the microwave power is 3500W, the deposition pressure is 9.5kPa, the flow ratio of H2 to CH4 is 200, 2.0sccm, the deposition temperature is 850 ℃, and the deposition time is 8.0h. Note: sccm: standard cubic centimeters per minute.
The results were: and (3) testing the deposition result of the diamond film on the inner surface of the polycrystalline silicon tube 3 to obtain the thickness distribution curve of the diamond film on the inner surface of the tube 3, specifically as shown in figure 8, wherein the diamond film deposition is formed on the inner surface of the polycrystalline silicon tube 3.
Comparative example 2: the diameter of the operating platform 1 is 60 mm; wherein the outer diameter of the polysilicon pipe 3 is 16.0 mm; with an inner diameter of 10.0 mm and a length of 20.0 mm. This comparative example directly performed the deposition of the diamond film without using the metal wire 4.
The deposition process parameters of the diamond film are as follows: the microwave power is 3500W, the deposition pressure is 9.5kPa, the flow ratio of H2 to CH4 is 200, 2.0sccm, the deposition temperature is 840 ℃, and the deposition time is 8.0h.
The results were: and testing the deposition result of the diamond film on the inner surface of the silicon carbide pipe 3 to obtain the thickness distribution curve of the diamond film on the inner surface of the pipe 3, which is shown in figure 9. Except for the two ends close to the ports, the inside of the tube 3 is deposited with a diamond film, and the other inside positions are not deposited with the diamond film.
Comparing the results of example 2 and comparative example 2, it can be seen that the metal wire 4 is arranged in the polysilicon ceramic hole, and the metal spurs 5 are bound on the metal wire 4 to deposit diamond film in the microwave plasma.
The working principle is as follows: as shown in fig. 1-9, before the method and the device for performing MPCVD on the inner surface of a tubular material are used for injection molding, a tubular material 3 is firstly placed between two support blocks 2 on the upper surface of an operating table 1, then a bidirectional screw rod 15 is rotated, the bidirectional screw rod 15 can drive a threaded sleeve 14 to move transversely when rotated, the threaded sleeve 14 can drive a connecting block 12 to move transversely when moved transversely, the connecting block 12 can drive a limiting block 13 to move transversely, and the tubular material 3 is limited when the limiting block 13 moves transversely to the surface of the tubular material 3;
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (10)
1. An apparatus for MPCVD on an inner surface of a tubular material, comprising: the operating table (1) is characterized in that a supporting block (2) is arranged on the upper surface of the operating table (1), a pipe (3) is placed on the upper surface of the operating table (1), a metal wire (4) penetrates through the pipe (3), a metal spine (5) is installed on the surface of the metal wire (4), the metal wire (4) is connected with the side surface of the supporting block (2), a guide block (6) is connected with the side surface of the supporting block (2), a guide rod (7) penetrates through the guide block (6), the guide rod (7) is connected to the upper surface of the operating table (1), a first bearing (8) is embedded in the operating table (1), a threaded rod (9) penetrates through the first bearing (8), and a threaded groove (10) is formed in the bottom side surface of the supporting block (2) close to the threaded rod (9);
a strip-shaped groove (11) is formed in the upper surface of the operating platform (1), a connecting block (12) is connected to the inner portion of the strip-shaped groove (11), a limiting block (13) is connected to the upper surface of the connecting block (12), a threaded sleeve (14) is connected to the lower surface of the connecting block (12), a two-way screw rod (15) penetrates through the inner portion of the threaded sleeve (14), and a bearing seat (16) is installed between the two-way screw rod (15) and the operating platform (1).
2. An apparatus for MPCVD according to claim 1, wherein: the guide blocks (6) and the guide rods (7) are symmetrically arranged in two groups about a longitudinal central axis of the operating platform (1), the guide blocks (6) are in sliding connection with the guide rods (7), and an included angle of the connecting position of the guide rods (7) and the upper surface of the operating platform (1) is 90 degrees.
3. An apparatus for MPCVD according to claim 1, wherein: and a rotating structure is formed between the threaded rod (9) and the first bearing (8).
4. The apparatus for MPCVD on an inner surface of a tubular material according to claim 1, wherein: the threaded rod (9) forms a threaded god structure through the threaded groove (10) and the supporting block (2).
5. The apparatus for MPCVD on an inner surface of a tubular material according to claim 1, wherein: connecting block (12) are provided with two sets ofly in the inside of bar groove (11), be sliding connection between connecting block (12) and bar groove (11).
6. An apparatus for MPCVD according to claim 1, wherein: the limiting blocks (13) are respectively arranged on two sides of the pipe (3), and the side-view longitudinal section of each limiting block (13) is triangular.
7. An apparatus for MPCVD according to claim 1, wherein: the bidirectional screw rod (15) is in threaded connection with the threaded sleeve (14), and a rotating structure is arranged between the bidirectional screw rod (15) and the bearing seat (16).
8. A method for MPCVD on an inner surface of a tubular material, comprising the steps of:
s1: placing the pipe, namely placing the pipe (3) on the upper surface of an operating table (1) of microwave plasma;
s2: the pipe is limited, the position of the limiting block (13) is adjusted by rotating the bidirectional screw rod (15), and then the position of the pipe (3) is limited by the limiting block (13);
s3: the pipe is threaded, a metal wire (4) with a metal thorn (5) passes through the pipe (3) and is connected to the surface of the other supporting block (2);
s4: adjusting the height of the metal wire, namely adjusting the height of the supporting block (2) by rotating the threaded rod (9) until the supporting block (2) adjusts the metal wire (4) to the position of the central axis of the pipe (3);
s5: and (4) coating the inner wall of the pipe, opening a microwave plasma chemical vapor deposition device, and depositing and coating the inner wall of the pipe (3).
9. The method of MPCVD on an inner surface of a tubular material according to claim 8, wherein: the pipe (3) and the supporting block (2) are made of high-temperature-resistant ceramic materials, the supporting block (2) is made of aluminum oxide or silicon carbide, and the metal wire (4) and the metal thorn (5) are made of high-temperature-resistant metal materials.
10. The method of MPCVD on an inner surface of a tubular material according to claim 8, wherein: the metal wires (4) and the metal spines (5) are made of tungsten, molybdenum or rhenium, and a diamond film with uniform thickness is deposited on the inner wall of the pipe (3).
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
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| CN202210963517.5A CN115287635B (en) | 2022-08-11 | 2022-08-11 | Method and device for performing MPCVD on inner surface of tubular material |
| PCT/CN2023/101666 WO2024032160A1 (en) | 2022-08-11 | 2023-06-21 | Method and apparatus for performing mpcvd on inner surface of tubular material |
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| CN202210963517.5A CN115287635B (en) | 2022-08-11 | 2022-08-11 | Method and device for performing MPCVD on inner surface of tubular material |
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| WO (1) | WO2024032160A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115821213A (en) * | 2022-11-24 | 2023-03-21 | 北京工业大学 | Method and device for preparing hydrogen-resistant coating on inner wall surface of small-caliber metal pipe |
| WO2024032160A1 (en) * | 2022-08-11 | 2024-02-15 | 上海征世科技股份有限公司 | Method and apparatus for performing mpcvd on inner surface of tubular material |
| CN117646195A (en) * | 2024-01-30 | 2024-03-05 | 湖南德智新材料有限公司 | Supporting mechanism, supporting device and film preparation equipment |
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| CN214870421U (en) * | 2021-04-29 | 2021-11-26 | 常州市昱宏精密轴承有限公司 | Adjustable lifting platform for bearing production |
| CN216803363U (en) * | 2021-10-25 | 2022-06-24 | 深圳市槿星建筑工程有限公司 | Auxiliary supporting device convenient for butt joint for sewage branch pipe installation |
| CN216634570U (en) * | 2022-01-17 | 2022-05-31 | 厦门凯玥机器制造有限公司 | Cutting machine for cutting and perforating pipe |
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| WO2024032160A1 (en) * | 2022-08-11 | 2024-02-15 | 上海征世科技股份有限公司 | Method and apparatus for performing mpcvd on inner surface of tubular material |
| CN115821213A (en) * | 2022-11-24 | 2023-03-21 | 北京工业大学 | Method and device for preparing hydrogen-resistant coating on inner wall surface of small-caliber metal pipe |
| CN117646195A (en) * | 2024-01-30 | 2024-03-05 | 湖南德智新材料有限公司 | Supporting mechanism, supporting device and film preparation equipment |
| CN117646195B (en) * | 2024-01-30 | 2024-04-26 | 湖南德智新材料有限公司 | Supporting mechanism, supporting device and film preparation equipment |
Also Published As
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| CN115287635B (en) | 2024-05-14 |
| WO2024032160A1 (en) | 2024-02-15 |
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