CN115275002B - Liquid-liquid interface type memristor and inhibition type nerve synapse device - Google Patents
Liquid-liquid interface type memristor and inhibition type nerve synapse device Download PDFInfo
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- CN115275002B CN115275002B CN202210842407.3A CN202210842407A CN115275002B CN 115275002 B CN115275002 B CN 115275002B CN 202210842407 A CN202210842407 A CN 202210842407A CN 115275002 B CN115275002 B CN 115275002B
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Abstract
The embodiment of the application provides a liquid-liquid interface type memristor, which comprises the following components: a first container storing a first liquid, a second container storing a second liquid, and a working layer between the first container and the second container; wherein, the working layer is provided with a nano pore canal which is communicated with the first container and the second container; the size of the cavity of the first container and the second container is at least 100 times of the aperture and the length of the nano pore canal, the conductivity of the first liquid and the second liquid are different and mutually insoluble, and a liquid-liquid interface is formed in the nano pore canal; the inner wall surface of the nano pore canal is positively charged after hydrolysis in the first liquid; as the magnitude of the applied voltage between the two open ends of the nanopore varies, the liquid-liquid interface moves within the nanopore based on electroosmotic flow. The embodiment of the application is based on the container and the nano pore canal, can rapidly realize the enhanced response of the nano-fluid interface type memristor to the voltage, and can be used for improving the performance of the inhibitory artificial nerve synapse device.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a liquid-liquid interface type memristor and an inhibition type nerve synapse device.
Background
The memristor has the non-volatile memory characteristics, so that the memristor has the data storage capacity, the conductivity state of the memristor can be adjusted, the memristor has the numerical calculation capacity, and the memristor can realize the integration of calculation and storage at the same position by combining the memristor and the memristor, so that the memory calculation is integrated, the limitation of the traditional von neumann calculation architecture is hopeful to be broken through, and the memristor has a wide application prospect.
The related art proposes an interface type nano-fluid memristor, and the conductivity of a device in which a nano-pipeline is positioned is changed by moving a liquid-liquid interface of fluid in the nano-pipeline under the action of applied voltage, so that the function of the memristor is realized. However, the current nanofluid memristors use a nano channel as a storage environment of electrolyte in the memristor and a mobile environment of an electrolyte interface, the response time is as long as hundreds of milliseconds, the operating voltage is also on the order of tens of volts, and the performance and application expansion of the memristor are greatly limited. In the field of artificial nerve synapses, for example, in order to realize the matching of the action potentials of neurons, extremely high requirements are put on the response time and the voltage of the operation voltage, so how to reduce the response time and the operation voltage of the interface-type nanofluidic memristor is a problem to be solved by the technicians at present.
Disclosure of Invention
In order to solve the problems, the embodiment of the application provides a liquid-liquid interface type memristor and a suppression type nerve synapse device, which aim to improve the response speed of the interface type nanofluidic memristor and reduce the operation voltage.
The embodiment of the application provides a liquid-liquid interface type memristor, which comprises the following components:
A first container storing a first liquid, a second container storing a second liquid, and a working layer between the first container and the second container; the working layer is provided with a nano pore canal communicated with the first container and the second container, the aperture of an opening used for connecting the nano pore canal on the first container and the second container, the size of a cavity of the first container and the size of a cavity of the second container are at least 100 times that of the aperture and the length of the nano pore canal, the conductivity of the first liquid and the conductivity of the second liquid are unequal and mutually insoluble, and the first liquid and the second liquid form a liquid-liquid interface in the nano pore canal;
Wherein after the inner wall surface of the nano pore canal is hydrolyzed in the first liquid, the inner wall surface of the nano pore canal is positively charged; as the magnitude of the applied voltage between the two open ends of the nanopore varies, the liquid-liquid interface moves within the nanopore based on electroosmotic flow.
Optionally, the working layer includes: a base portion;
Wherein the nanochannel is arranged in the base part and is communicated with the first container and the second container;
Wherein the nanochannels in the base portion are fabricated on the base portion using focused ion beam or dielectric breakdown techniques, and then obtained by depositing a layer of wall material.
Optionally, the working layer includes: a base portion and a suspended support portion;
The nano pore canal is arranged in the suspension supporting part, a through hole is arranged on the base part, and the suspension supporting part is opposite to the base part and is connected with the base part from one side surface of the base part; the nano pore canal is opposite to the through hole on the base part; wherein the nanopore communicates with the first container and the second container via a through hole on the base portion;
The suspended supporting part is a two-dimensional material obtained by transfer in the area where the through hole of the base part is located; the nano pore canal is obtained by processing the two-dimensional material by utilizing a focused ion beam and depositing a layer of wall surface material.
Optionally, the liquid-liquid interface memristor further includes: a silicon substrate provided with a through hole; wherein the silicon substrate is located between the working layer and the first container or between the working layer and the second container;
The pore sizes of the openings at the two ends of the through hole on the silicon substrate are unequal, the smaller opening in the openings at the two ends is connected with the nano pore canal on the base part, or the nano pore canal on the suspended supporting part is connected through the through hole on the base part, and the larger opening in the openings at the two ends is connected with the first container or the second container.
Optionally, the liquid-liquid interface memristor further includes: a first silica gel pad disposed between the working layer and the first container and a second silica gel pad disposed between the silicon substrate and the second container, or a first silica gel pad disposed between the working layer and the second container and a second silica gel pad disposed between the silicon substrate and the first container;
And through holes with the central hole axes consistent with the central hole axes of the nanometer pore canals are arranged on the first silica gel pad and the second silica gel pad.
Optionally, the inner wall surface of the nano pore canal is made of alumina material.
Optionally, the pore size of the nano pore canal is 1nm to 2000nm, and the length of the nano pore canal is 0.1nm to 500nm.
Optionally, the first liquid is an inorganic salt solution, and the second liquid is an ionic liquid that is immiscible with the first liquid; wherein the second liquid has a viscosity coefficient greater than that of the first liquid.
Optionally, the conductivity of the inorganic salt solution is not equal to the conductivity of the ionic liquid, and the first liquid and the inner wall surface of the nano pore canal undergo a solid-liquid reaction, so that the area where the inner wall surface of the nano pore canal contacts with the first liquid is charged, and the ionic selection is performed on the first liquid; the second liquid does not react with the inner wall surface of the nano pore canal in a solid-liquid way.
The embodiment of the application also provides a suppression type nerve synapse device, which comprises the liquid-liquid interface type memristor according to any one of the embodiments;
Wherein the liquid-liquid interface type memristor is used as an inhibitory nerve synapse, and the conductance of the inhibitory nerve synapse is reduced under the condition that a forward voltage is applied to an inorganic salt solution end of the inhibitory nerve synapse; the inorganic salt solution end is any one of the first container and the second container, and the liquid in the container corresponding to the inorganic salt solution end is inorganic salt solution.
Through the embodiments described above, the present application provides a liquid-liquid interface memristor and a suppressed neural synaptic device. Based on the communication of the containers at the two ends of the nano pore canal, the first container and the second container are used for storing two liquids, and the nano pore canal with small pore diameter and length is used for realizing the movement of a liquid-liquid interface generated by the non-mutual dissolution of the liquids. Accordingly, embodiments of the present application include the following advantages:
According to the liquid-liquid interface type memristor provided by the embodiment of the application, the liquid-liquid interface is realized by utilizing the nano pore canal with a small enough size, and the movement of the liquid-liquid interface is accommodated, because the size of a container for storing liquid is greatly different from that of the nano pore canal, the resistance of the container section is negligible compared with that of the nano pore canal section, and because the length of the nano pore canal is very short, and in order to achieve the same relative resistance variation, the required voltage pulse width is inversely proportional to the square of the length of the nano pore canal, therefore, under the condition that the voltage at the two ends of the nano pore canal is changed, the pulse time required for obtaining the same relative resistance variation by the liquid-liquid interface type memristor based on the movement of the liquid-liquid interface under the action of electroosmotic flow is shorter, namely the response speed of the device is faster, and the response time of the nano fluid interface type memristor to the operation voltage is greatly reduced. Because the size of the nano pore canal is small enough, the movement of the liquid-liquid interface can be realized by smaller operation voltage, so that the operation voltage is reduced.
According to the inhibitory type nerve synapse device provided by the embodiment of the application, the liquid-liquid interface type memristor in the embodiment is used as the inhibitory type nerve synapse, so that the conductivity of the inhibitory type nerve synapse is quickly reduced under the condition that forward voltage is applied to the inorganic salt solution end of the inhibitory type nerve synapse, and the matching of neuron action potentials is realized through quick enhancement type response, so that the performance of the artificial inhibitory type nerve synapse device is improved.
Drawings
FIG. 1 is a schematic diagram of a liquid-liquid interface memristor provided in an embodiment of the present disclosure;
FIG. 2 is a schematic view of a first container according to an embodiment of the present application;
FIG. 3 is a schematic structural diagram of a working layer of a nanopore according to an embodiment of the present application;
FIG. 4 is a schematic structural diagram of a silicon substrate surface with nanopores according to an embodiment of the present application;
FIG. 5 is a schematic illustration of a liquid-liquid interface memristor provided in an embodiment of the present disclosure;
FIG. 6 is a schematic side view of a working layer according to an embodiment of the present application;
FIG. 7 is a schematic diagram of a structure of yet another liquid-liquid interface memristor provided by an embodiment of the present disclosure;
Fig. 8 is a schematic structural view of a reference electrode according to an embodiment of the present application;
FIG. 9 is a schematic structural diagram of a silica gel pad according to an embodiment of the present application;
FIG. 10 is a schematic side view of a further working layer according to an embodiment of the present application;
FIG. 11 is a schematic structural view of a silicon substrate surface of yet another nanopore provided by an embodiment of the present application;
FIG. 12 is a schematic cross-sectional view of another nanopore according to an embodiment of the present application;
fig. 13 is a schematic structural diagram of a working layer of another nanopore according to an embodiment of the present application.
Reference numerals:
11-nano-pore channels; 12-a suspended support; 13-a base part; 21-a first container; 22-a second container; 31-a silicon substrate; 41-a first silica gel pad; 42-a second silica gel pad; 51-a first reference electrode; 52-a second reference electrode.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
Embodiments of the present application will be described below with reference to the accompanying drawings of the specification:
Referring to fig. 1, fig. 1 is a schematic structural diagram of a liquid-liquid interface memristor provided in an embodiment of the present disclosure. As shown in fig. 1, an embodiment of the present application provides a liquid-liquid interface type memristor, including: a first container 21 storing a first liquid, a second container 22 storing a second liquid, and a working layer between said first container 21 and said second container 22.
Preferably, the first container 21 may be a glass container, and the second container 22 may be a glass container.
Preferably, the working layer may be a silicon nitride material, which may be formed in a liquid-liquid interface memristor.
Further, to facilitate adjustment of the amount of liquid in each container, the liquid-liquid interface memristor may further include: a first liquid injection hole provided in the first container 21, and a second liquid injection hole provided in the second container 22; wherein the first liquid injection hole is used for injecting the first liquid into the first container 21, and the second liquid injection hole is used for injecting the second liquid into the second container 22.
Referring to fig. 2, fig. 2 is a schematic structural view of a first container 21 according to an embodiment of the present application. The first container 21 and the second container 22 are containers for storing liquid in the memristor with liquid-liquid interface, and the second container 22 may be made of materials and have a size and shape identical to those of the first container 21 and are correspondingly disposed on two sides of the working layer. As shown in fig. 2, the first container 21 and the second container 22 may be cylindrical containers provided with a filling hole and a side opening hole. Wherein, the liquid injection hole can be arranged on the round bottom surface of the cylindrical container, and the opening on one side can be arranged on the circumferential side surface of the cylindrical container, so that the first container 21 and the second container 22 form cladding on the nano pore canal 11 on the working layer by the circumferential side surface.
Referring to fig. 3, fig. 3 is a schematic structural diagram of a working layer of a nanopore 11 according to an embodiment of the present application. Referring to fig. 4, fig. 4 is a schematic structural diagram of a silicon substrate surface of a nanopore 11 according to an embodiment of the present application. Since the working layer and the silicon substrate 31 are obtained by processing the double polished silicon wafer with the surface covered with the oxide layer and the nitride layer in the embodiment of the present application from the aspect of the preparation process, and the nano-pore channels 11 are shown in fig. 3 and fig. 4 from the working layer surface and the silicon substrate, respectively, as shown in fig. 3 and fig. 4, the working layer between the first container 21 and the second container 22 in the embodiment of the present application may be an oxide layer and a nitride layer on the surface of the silicon wafer, or may be a sheet-shaped two-dimensional material and an oxide layer and a nitride layer on the surface of the silicon wafer, and the outline of the sheet-shaped working layer is not further limited in the embodiment of the present application.
The working layer is provided with a nano pore canal 11 which is communicated with the first container 21 and the second container 22, the aperture of an opening for connecting the nano pore canal 11, the cavity size of the first container and the cavity size of the second container on the first container 21 and the second container 22 are at least 100 times as large as the aperture and the length of the nano pore canal 11, the conductivity of the first liquid and the conductivity of the second liquid are unequal and are mutually insoluble, and the first liquid and the second liquid form a liquid-liquid interface in the nano pore canal 11.
In particular, the nanochannel 11 may be a through hole with a preparation accuracy and a size of a nanometer scale on the working layer.
The nanochannel 11 may be located in the center of the working layer of lamellar two-dimensional material, or in the center of the oxide and nitride layers on the surface of the silicon wafer, as shown in fig. 3.
Wherein the first liquid and the second liquid may be selected to be mutually immiscible liquids to form a liquid-liquid interface. The first liquid and the second liquid can be electrolyte solutions with different viscosity coefficients, and the viscosity coefficient of the second liquid is larger, so that the liquid-liquid interface position can be reserved after the external voltage is removed. And the first liquid and the second liquid can be electrolyte solutions with different conductivities, and when the liquid-liquid interface moves in the nano pore canal, the resistance value of the nano pore canal can be changed due to the different ratio of the two liquids and the different conductivities.
In order to achieve a sufficiently low voltage response time and a small operating voltage, the nanopores 11 may be as small as possible within a viable process, in an alternative embodiment the diameter of the nanopores 11 is 1nm to 2000nm and the length of the nanopores 11 is 0.1nm to 500nm.
The aperture of the opening for connecting the nanopore 11 and the dimensions of the chambers of the first container and the second container 22 are at least 100 times that of the nanopore 11, so that the resistance of the liquid along the diameter surface in the direction of the nanopore 11 in the container is far smaller than that of the liquid between the two ends of the nanopore 11, and thus can be ignored, and the conductance of the liquid between the two ends of the nanopore 11 can be regarded as the conductance of the liquid-liquid interface memristor. Wherein, when the first container 21 and the second container 22 are cylindrical containers, the diameters of the openings for connecting the nanochannels 11 on the first container 21 and the second container 22 may also be the diameters of the openings on the circumferential side surfaces of the cylindrical containers.
Specifically, the aperture of the openings on the first container 21 and the second container 22 for connecting the nanochannels 11 and the size of the chambers of the first container and the second container are at least 100 times as large as the aperture of the nanochannels 11 and at least 100 times as long as the nanochannels 11. Illustratively, the diameter of the nanopore 11 is 5nm, the length of the nanopore 11 is 2nm, the diameter of the opening of the cylindrical container connecting the nanopore 11, or the diameter of the circumferential side of the cylindrical container is 5000nm, and the chamber size of the cylindrical container is at least 5000nm.
Further alternatively, the pore size of the openings for connecting the nanopores 11 in the first and second containers 21 and 22 and the chamber size of the first and second containers are multiples of 3 orders of magnitude or more of the pore size and length size of the nanopores 11.
After the inner wall surface of the nano pore canal 11 is hydrolyzed in the first liquid, the inner wall surface of the nano pore canal 11 is positively charged, and the second liquid cannot charge the inner wall surface of the nano pore canal; as the magnitude of the voltage applied between the two open ends of the nanopore 11 changes, the liquid-liquid interface moves within the nanopore 11 based on electroosmotic flow.
Preferably, the first liquid is an inorganic salt solution and the second liquid is an ionic liquid that is immiscible with the first liquid; wherein the second liquid has a viscosity coefficient greater than that of the first liquid.
Preferably, the wall surface of the inner wall of the nano-pore canal 11 may be an alumina material.
Further optionally, the conductivity of the inorganic salt solution is not equal to the conductivity of the ionic liquid, and the first liquid and the inner wall surface of the nano pore canal undergo a solid-liquid reaction, so that a region where the inner wall surface of the nano pore canal contacts with the first liquid is charged, and ion selection is performed on the first liquid; the second liquid does not react with the inner wall surface of the nano pore canal in a solid-liquid way.
The inorganic salt in the inorganic salt solution is a strong electrolyte, the ionic liquid is an organic weak electrolyte, the conductivity and the viscosity coefficient of the ionic liquid are different, the conductivity of the ionic liquid is lower than that of the inorganic salt solution, and the viscosity coefficient of the ionic liquid is larger than that of the inorganic salt solution.
The embodiment of the application also provides an example, wherein the first liquid can be a potassium chloride KCl solution, and the second liquid can be a hexafluorophosphoric acid BMIMPF solution.
Referring to fig. 5, fig. 5 is a schematic illustration of a liquid-liquid interface memristor provided in an embodiment of the present disclosure. As shown in fig. 5, in particular, the alumina material may be hydrolyzed in the inorganic salt solution, but basically will not be hydrolyzed in the ionic liquid, the portion of the alumina inner wall surface of the nano pore canal 11 located in the inorganic salt solution will be positively charged, the second liquid will not be able to charge the inner wall surface of the nano pore canal 11, and the inorganic salt solution forms a negatively charged electric double layer near the inner wall surface of the nano pore canal 11, under the effect of the electric field applied by the inorganic salt solution end, the electroosmotic flow pushes the liquid-liquid interface to move toward the first container 21 for storing the first liquid, so that the inorganic salt solution in the nano pore canal 11 is reduced, the solution ratio with small conductivity in the pore canal is increased, and the conductivity of the nano pore canal 11 will be reduced, that is, the conductivity of the liquid-liquid interface memristor is reduced. In contrast, when a negative voltage is applied to the inorganic salt solution end, the liquid-liquid interface moves toward the second container 22 for storing the second liquid, so that the inorganic salt solution in the nano-pore 11 increases, the solution with high conductivity in the pore increases in proportion, and the conductance of the nano-pore 11 increases, that is, the conductance of the liquid-liquid interface memristor increases.
In addition, the electric conductance of the liquid in the nano pore canal 11 changes under the action of the electric field, after the operation voltage is removed, the ionic liquid has a relatively large viscosity coefficient, and the liquid-liquid interface moves to receive a large fluid resistance, so that the liquid-liquid interface stops moving after moving for a certain distance under the action of inertia, at this time, the change of the electric conductance of the nano pore canal 11 under the action of the electric field stops, namely, after the current operation voltage is disconnected, the electric conductance of the liquid-liquid interface memristor is kept unchanged under the condition that a new operation voltage is not reapplied, and the performance that the electric conductance of the memristor changes along with the voltage and the electric conductance state can be maintained, namely, the memristor is nonvolatile is realized.
Through the above embodiment, the nano pore canal 11 with a small enough size is matched with the container with a large size order of magnitude difference, so that the movement of the liquid-liquid interface in the small-size channel is realized, the liquid level position corresponding to the operation voltage at two ends of the pore canal can be quickly reached, the response of the liquid-liquid interface type memristor to the applied voltage can be quickly realized, the liquid-liquid interface type memristor with low delay response and low operation voltage is realized, the performance of the memristor is improved, and the application field of the liquid-liquid interface type memristor is facilitated to be expanded.
Referring to fig. 10, fig. 10 is a schematic side view of a working layer according to an embodiment of the present application. Referring to fig. 11, fig. 11 is a schematic structural view of a silicon substrate surface of yet another nanopore provided in an embodiment of the present application. Referring to fig. 12, fig. 12 is a schematic cross-sectional view of still another nanopore according to an embodiment of the present application. Referring to fig. 13, fig. 13 is a schematic structural diagram of a working layer of another nanopore according to an embodiment of the present application. As shown in fig. 10 to 13, considering that the substrate portion 13 may be directly used to provide the nanochannels 11 under ideal conditions, in an alternative embodiment, the working layer comprises: a base portion 13.
Wherein the nano pore canal is arranged in the base part and is communicated with the first container and the second container.
Wherein the nanochannels in the base portion are fabricated on the base portion using focused ion beam or dielectric breakdown techniques, and then obtained by depositing a layer of wall material.
Referring to fig. 6, fig. 6 is a schematic side view of a working layer according to an embodiment of the present application. As shown in fig. 6, considering that the length of the nanochannel 11 needs to be small in order to achieve a rapid movement of the liquid-liquid interface, for example, up to 10nm, the thickness of the working layer, if it is consistent with the length of the nanochannel 11, may be difficult to achieve, the mechanical properties are poor, resulting in poor connectivity with the first and second containers 21 and 22, or the working layer breaks directly. Thus, in an alternative embodiment, the present application also provides a working layer comprising: a base portion 13 and a suspended support portion 12.
The nano pore canal is arranged in the suspension supporting part, a through hole is arranged on the base part 13, the suspension supporting part faces the base part 13, and the nano pore canal is connected with the base part 13 from one side surface of the base part 13; the nano pore canal is opposite to the through hole on the base part 13; wherein the nanochannel communicates with the first container and the second container via a through hole in the base portion 13.
Wherein the suspension supporting part is a two-dimensional material obtained by transfer in the area where the through hole of the base part 13 is located; the nano pore canal is obtained by processing the two-dimensional material by utilizing a focused ion beam and depositing a layer of wall surface material.
Specifically, the nano-pore 11 is a through hole on the suspended supporting portion 12, the thickness of the suspended supporting portion 12 is consistent with the length of the nano-pore 11, and the thickness of the base portion 13 is not limited, for example, may be 100nm to 500nm.
The material of the base portion 13 may be a silicon oxide material on the surface of a double polished silicon wafer, and the suspended supporting portion 12 may be a two-dimensional material.
Through the above embodiment, the nano-pore canal 11 is arranged on the working layer, the thickness of the suspended supporting part 12 on the working layer is consistent with that of the nano-pore canal 11, the whole thickness of the base part 13 of the working layer does not influence the moving speed of the liquid-liquid interface, and meanwhile, the voltage response speed of the liquid-liquid interface memristor, the preparation easiness of the working layer and the supporting performance of the working layer on containers on two sides are ensured.
Furthermore, considering the difficulty of preparing the nano-pore canal, the suspended supporting part 12 can be made of thinned two-dimensional materials, and in an optional implementation manner, the application further provides a working layer, wherein the suspended supporting part 12 is made of two-dimensional materials obtained by transferring in the area where the through hole of the substrate part 13 is located; wherein the nanochannel 11 is obtained by processing the two-dimensional material by using a focused ion beam and depositing a layer of wall material.
Referring to fig. 7, fig. 7 is a schematic structural diagram of yet another liquid-liquid interface type memristor provided in an embodiment of the present disclosure. As shown in fig. 7, in order to facilitate the overall preparation of the liquid-liquid interface type memristor, the semiconductor processing is performed on the silicon substrate 31, and in the embodiment of the present application, from the aspect of the preparation process, the double polished silicon wafer covered with the oxide layer and the nitride layer on the surface is processed to obtain the working layer and the silicon substrate 31, in an alternative embodiment, the present application further provides a liquid-liquid interface type memristor, where the liquid-liquid interface type memristor further includes: a silicon substrate 31 provided with a through hole; wherein the silicon substrate 31 is located between the working layer and the first container 21 or between the working layer and the second container 22.
The through holes of the silicon substrate 31 are communicated with the nanopores 11 and the openings of the containers, and also in order to reduce the resistance of the liquid in the through holes of the silicon substrate 31, wherein the pore sizes of the openings at the two ends of the through holes on the silicon substrate are unequal, smaller openings in the openings at the two ends are connected with the nanopores 11 on the base part, or are connected with the nanopores on the suspended supporting part through the through holes on the base part, and larger openings in the openings at the two ends are connected with the first container 21 or the second container 22.
Therefore, the through holes of the silicon substrate 31 can complete natural transition from hole to hole under the condition that the nano pore canal 11 and the container are connected, and influence on the conductivity of the memristor is reduced as much as possible.
The silicon substrate 31 and the working layer may be processed from the same piece of double-sided polished silicon wafer, or the base portion in the silicon substrate 31 and the working layer may be processed from the same piece of double-sided polished silicon wafer.
In an alternative embodiment, as shown in fig. 7, the present application further provides a liquid-liquid interface type memristor, further comprising: a first reference electrode 51 disposed in the first liquid is immersed in the first container 21, and a second reference electrode 52 disposed in the second liquid is immersed in the second container 22.
The first reference electrode 51 and the second reference electrode 52 form a circuit loop connected in series with the liquid in the nanopore 11 via the first liquid and the second liquid.
Referring to fig. 8, fig. 8 is a schematic structural diagram of a reference electrode according to an embodiment of the present application. As shown in fig. 8, the reference electrode may be elongated to be immersed in the liquid in the container through the liquid injection hole to provide an operating voltage across the liquid-liquid interface memristor. Specifically, the operating voltages at two ends of the memristor with liquid-liquid interface can be input through the first reference electrode 51 and the second reference electrode 52, and because the size of the container and the size of the aperture of the nanopore 11 have magnitude difference, the resistance value of the liquid in the container can be ignored, and the application of the voltages at two ends of the nanopore 11 can be regarded as direct through the first reference electrode 51 and the second reference electrode 52. Wherein the material and the size and shape of the first reference electrode 51 and the second reference electrode 52 may be the same.
In an alternative embodiment, as shown in fig. 7, the present application further provides a liquid-liquid interface type memristor, further comprising: a first silica gel pad 41 disposed between the working layer and the first container 21 and a second silica gel pad 42 disposed between the silica substrate 31 and the second container 22, or a first silica gel pad 41 disposed between the working layer and the second container 22 and a second silica gel pad 42 disposed between the silica substrate 31 and the first container 21.
Referring to fig. 9, fig. 9 is a schematic structural diagram of a silica gel pad according to an embodiment of the present application. As shown in fig. 9, through holes are provided on the first and second silica gel pads 41 and 42. Wherein, the material and the size shape of the first and second silica gel pads 41 and 42 may be the same.
The silica gel pad can play a role in sealing, so that the nano pore canal 11 is tightly connected with the first container 21 and the second container 22 at two sides through the through hole on the base part 13 and the through hole on the silicon substrate 31, and liquid leakage is prevented.
Wherein, the through hole on the silica gel pad at one side of the working layer can be larger than the size of the working layer. The through holes on the silica gel pad on one side of the silicon substrate 31 may be larger than the larger openings of the openings at the two ends of the through holes on the silicon substrate 31, so as to play a role in sealing and not to influence the communication at the two ends.
In an alternative embodiment, the present application also provides a method, wherein the inner wall surface of the nanochannel 11 is an alumina material; wherein the inner wall surface of the nanochannel 11 is obtained by processing a channel on the working layer by using a focused ion beam or dielectric breakdown technique, and performing ALD deposition on the channel.
Working layer illustratively, when the working layer is an alumina material, nanochannel 11 through-holes of accuracy and size of a nanometer scale can be fabricated on the working layer by focusing the ion beam FIB.
When the working layer comprises silicon nitride material and alumina material, a through hole with the accuracy and the size of nano pore canal 11 of nano grade can be prepared on the working layer by focusing ion beam FIB, and the nano pore canal 11 with the inner wall surface material of alumina is obtained in the through hole by ALD atomic layer deposition.
In combination with the above embodiments, taking the example of preparing the nano-pore channel 11 with the inner wall surface material being alumina as an example, the embodiment of the present application further provides an example of a method for preparing the liquid-liquid interface memristor according to any one of the above embodiments, including:
step S101, photoetching is carried out on a double polished silicon wafer from one side surface of the double polished silicon wafer according to a preset layout; wherein, the double polished silicon wafer can be with the upper surface of Nitride layer, lower surface is/>Double-sided polished silicon wafer of oxide layer; wherein the nitride layer can be a silicon nitride material, and the oxide layer can be a silicon oxide material;
Step S102, developing and etching the nitride layer and the oxide layer of the double-polished silicon wafer from the surface of the double-polished silicon wafer subjected to photoetching to prepare larger openings in openings at two ends of a through hole on the silicon substrate 31, and performing dry photoresist removal;
Step S103, etching the silicon substrate from the side surface of the double-polished silicon wafer subjected to development and etching by utilizing potassium hydroxide KOH until the oxide layer on the other side surface of the double-polished silicon wafer which is not subjected to photoetching and etching is stopped, and then performing K+ removal cleaning to obtain a through hole on the silicon substrate 31 and smaller openings in openings at two ends of the through hole;
Step S104, obtaining a nitride layer and a nano pore canal 11 on an oxide layer from the surface of the nitride layer on the other side surface of the double polished silicon wafer which is not subjected to photoetching and etching through a focused ion beam FIB, thereby obtaining a working layer with a nano pore canal 11 through hole; wherein the through holes of the nano-pore channels 11 on the working layer are aligned with the through hole patterns on the silicon substrate 31;
Step S105, depositing a layer of alumina on the suspended working layer by utilizing ALD (Atomic layer deposition) atomic layers to prepare the nano pore channel 11 with the inner wall surface being made of alumina material.
Step S106, the double polished silicon wafers with the nano pore channels 11 and the through holes of the silicon substrate 31 are respectively clamped between two glass containers through two silica gel pads with holes, so as to obtain the liquid-liquid interface memristor shown in the figures 11-13; the liquid-liquid interface type memristor can be used as a nanopore inhibition type nerve synapse device, and as forward voltage is applied to the first liquid end of the nanopore 11, the electric conduction of liquid in the nanopore 11 is correspondingly increased, so that an inhibition type artificial nerve synapse function is realized.
Through the embodiment, the double-polished silicon wafer is matched with the traditional etching and higher-precision focused ion beam process, the nano pore canal 11 is used as a space for accommodating liquid and moving liquid, so that the preparation of the liquid-liquid interface type memristor capable of rapidly responding to voltage change device conductance is realized, namely, the preparation of the nano pore canal inhibition type nerve synapse device with low delay and low operating voltage is realized, the matching of neuron action potentials can be realized, and the performance of the inhibition type artificial nerve synapse device is improved.
Considering that the liquid-liquid interface type memristor provided in the above embodiment can feed back an enhanced response to an externally given operation voltage, that is, the first liquid terminal is applied with a forward voltage, the conductance of the liquid-liquid interface type memristor is reduced, the response time delay is low, the operation voltage is small, and the liquid-liquid interface type memristor can be used as an artificial neural synaptic device, therefore, based on the same inventive concept, the embodiment of the present application also provides an inhibitory type neural synaptic device, which includes the liquid-liquid interface type memristor according to any one of the embodiments above;
Wherein the liquid-liquid interface type memristor is used as an inhibitory nerve synapse, and the conductance of the inhibitory nerve synapse is reduced under the condition that a forward voltage is applied to an inorganic salt solution end of the inhibitory nerve synapse; the inorganic salt solution end is any one of the first container and the second container, and the liquid in the container corresponding to the inorganic salt solution end is inorganic salt solution.
In this specification, each embodiment is described in a progressive manner, and each embodiment is mainly described by differences from other embodiments, and identical and similar parts between the embodiments are all enough to be referred to each other.
Finally, it is further noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article or apparatus that comprises the element.
The above description of a liquid-liquid interface memristor and a inhibitory type synapse device provided by the present application has been presented in detail, and specific examples are applied herein to illustrate the principles and embodiments of the present application, and the above examples are only for helping to understand the method and core ideas of the present application; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present application, the present description should not be construed as limiting the present application in view of the above.
Other embodiments of the application will be apparent to those skilled in the art from consideration of the specification and practice of the application disclosed herein. This application is intended to cover any variations, uses, or adaptations of the application following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the application pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the application being indicated by the following claims.
It is to be understood that the application is not limited to the precise arrangements and instrumentalities shown in the drawings, which have been described above, and that various modifications and changes may be effected without departing from the scope thereof. The structures shown in the drawings and described in this specification are provided for illustration only and are not intended to limit the scope of the specific size or placement configurations of the embodiments provided by the present application. The scope of the application is limited only by the appended claims.
Reference herein to "one embodiment," "an embodiment," or "one or more embodiments" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the application. Furthermore, it is noted that the word examples "in one embodiment" herein do not necessarily all refer to the same embodiment.
In the description provided herein, numerous specific details are set forth. However, it is understood that embodiments of the application may be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description.
In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The application may be implemented by means of hardware comprising several distinct elements, and by means of a suitably programmed computer. In the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware. The use of the words first, second, third, etc. do not denote any order. These words may be interpreted as names.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present application, and are not limiting; although the application has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present application.
Claims (7)
1. A liquid-liquid interface memristor, comprising: a first container storing a first liquid, a second container storing a second liquid, and a working layer between the first container and the second container; the working layer is provided with a nano pore canal communicated with the first container and the second container, the aperture of an opening used for connecting the nano pore canal on the first container and the second container, the size of a cavity of the first container and the size of a cavity of the second container are at least 100 times that of the aperture and the length of the nano pore canal, the conductivity of the first liquid and the conductivity of the second liquid are unequal and mutually insoluble, and the first liquid and the second liquid form a liquid-liquid interface in the nano pore canal;
wherein after the inner wall surface of the nano pore canal is hydrolyzed in the first liquid, the inner wall surface of the nano pore canal is positively charged; as the magnitude of the applied voltage between the two open ends of the nanopore varies, the liquid-liquid interface moves within the nanopore based on electroosmotic flow;
The first container and the second container are cylindrical containers, and openings are formed in the circumferential side surfaces of the cylindrical containers and are connected with the openings of the nano pore channels;
When the aperture size of the nano pore canal is 5nm and the length of the nano pore canal is 2nm, the aperture of the opening of the cylindrical container is 5000nm, and the cavity size of the cylindrical container is at least 5000nm;
And the thickness of the working layer is greater than or equal to the length of the nano pore canal;
a silica gel pad is arranged between the working layer and any container, and at least one silica gel pad is provided with a through hole, wherein the through hole is larger than the size of the working layer;
The first container and the second container are coated with the nanochannels on the working layer at the circumferential side;
in the case that the thickness of the working layer is greater than the length of the nanochannel, the working layer comprises:
A base portion and a suspended support portion;
The nano pore canal is arranged in the suspension supporting part, a through hole is arranged on the base part, and the suspension supporting part is opposite to the base part and is connected with the base part from one side surface of the base part; the nano pore canal is opposite to the through hole on the base part; wherein the nanopore communicates with the first container and the second container via a through hole on the base portion;
The suspended supporting part is a two-dimensional material obtained by transfer in the area where the through hole of the base part is located; the nano pore canal is obtained by processing a two-dimensional material by utilizing a focused ion beam, and performing ALD (atomic layer deposition) on the pore canal to deposit a layer of alumina material;
the liquid-liquid interface memristor further includes:
a silicon substrate provided with a through hole; wherein the silicon substrate is located between the working layer and the first container or between the working layer and the second container;
The pore sizes of the openings at the two ends of the through hole on the silicon substrate are unequal, the smaller opening in the openings at the two ends is connected with the nano pore canal on the suspended supporting part through the through hole on the base part, and the larger opening in the openings at the two ends is connected with the first container or the second container;
The suspended supporting part is made of thinned two-dimensional materials;
the substrate part is made of silicon oxide materials on the surface of the double polished silicon wafer;
the silicon substrate is obtained by processing double polished silicon wafers.
2. The liquid-liquid interface memristor of claim 1, wherein the working layer comprises: a base portion;
Wherein the nanochannel is arranged in the base part and is communicated with the first container and the second container;
Wherein the nanochannels in the base portion are fabricated on the base portion using focused ion beam or dielectric breakdown techniques, and then obtained by depositing a layer of wall material.
3. The liquid-liquid interface memristor of claim 1, further comprising: a first silica gel pad disposed between the working layer and the first container and a second silica gel pad disposed between the silicon substrate and the second container, or a first silica gel pad disposed between the working layer and the second container and a second silica gel pad disposed between the silicon substrate and the first container;
And through holes with the central hole axes consistent with the central hole axes of the nanometer pore canals are arranged on the first silica gel pad and the second silica gel pad.
4. The liquid-liquid interface memristor of claim 1, wherein the inner wall surface of the nanopore is an alumina material.
5. The liquid-liquid interface memristor of claim 1, wherein the first liquid is an inorganic salt solution and the second liquid is an ionic liquid that is immiscible with the first liquid; wherein the second liquid has a viscosity coefficient greater than that of the first liquid.
6. The liquid-liquid interface memristor of claim 5, wherein the conductivity of the inorganic salt solution is not equal to the conductivity of the ionic liquid, and the first liquid reacts with the inner wall surface of the nanopore in a solid-liquid manner, so that a region of the inner wall surface of the nanopore in contact with the first liquid is charged to perform ion selection on the first liquid; the second liquid does not react with the inner wall surface of the nano pore canal in a solid-liquid way.
7. A inhibitory nerve synaptic device comprising the liquid-liquid interface-type memristor of any one of claims 1-6;
Wherein the liquid-liquid interface type memristor is used as an inhibitory nerve synapse, and the conductance of the inhibitory nerve synapse is reduced under the condition that a forward voltage is applied to an inorganic salt solution end of the inhibitory nerve synapse; the inorganic salt solution end is any one of the first container and the second container, and the liquid in the container corresponding to the inorganic salt solution end is inorganic salt solution.
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