CN115275002A - Liquid-liquid interface type memristor and inhibition type nerve synapse device - Google Patents
Liquid-liquid interface type memristor and inhibition type nerve synapse device Download PDFInfo
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- CN115275002A CN115275002A CN202210842407.3A CN202210842407A CN115275002A CN 115275002 A CN115275002 A CN 115275002A CN 202210842407 A CN202210842407 A CN 202210842407A CN 115275002 A CN115275002 A CN 115275002A
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Abstract
The embodiment of the application provides a liquid-liquid interface type memristor includes: a first container for storing a first liquid, a second container for storing a second liquid, and a working layer located between the first container and the second container; wherein, the working layer is provided with a nanometer pore canal which communicates the first container and the second container; the size of the chamber of the first container and the second container is at least 100 times of the aperture and the length of the nanopore, the first liquid and the second liquid have different conductivities and are not mutually soluble, and a liquid-liquid interface is formed in the nanopore; the inner wall surface of the nanometer pore channel is positively charged after hydrolysis in the first liquid; as the magnitude of the applied voltage between the two open ends of the nanopore changes, the liquid-liquid interface moves within the nanopore based on electroosmotic flow. The embodiment of the application is based on the container and the nanometer pore channel, can quickly realize the enhancement type response of the nanofluid interface type memristor to the voltage, and can be used for improving the performance of the inhibition type artificial nerve synapse device.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a liquid-liquid interface type memristor and an inhibition type nerve synapse device.
Background
The memristor has data storage capacity due to the nonvolatile memory characteristic, has numerical calculation capacity due to the conductivity state adjustable capacity, can realize the integration of calculation and storage at the same position by combining the nonvolatile memory characteristic and the conductivity state adjustable capacity, realizes the integration of storage and calculation, is expected to break through the limit of the traditional Von Neumann calculation architecture, and has wide application prospect.
The related technology provides an interface type nano-fluid memristor, and the electric conductivity of a device where a nano-pipeline is located is changed through the movement of a liquid-liquid interface of fluid in the nano-pipeline under the action of applied voltage, so that the function of the memristor is realized. However, the existing nanofluid memristor uses a nanometer channel as a storage environment of electrolyte in the memristor and a moving environment of an electrolyte interface, the response time is hundreds of milliseconds, the operating voltage is dozens of volts, and the performance and application expansion of the memristor are greatly limited. In the field of artificial neural synapses, for example, in order to match action potentials of neurons, very high requirements are imposed on response time and voltage magnitude of an operating voltage, and therefore, how to reduce the response time and the operating voltage of an interface type nanofluid memristor is a problem to be solved by technical staff at present.
Disclosure of Invention
In order to solve the above problems, embodiments of the present application provide a liquid-liquid interface type memristor and a suppression type neurosynaptic device, aiming at improving the response speed of the interface type nanofluid memristor and reducing the operating voltage.
The embodiment of the application provides a liquid-liquid interface type memristor includes:
a first container for storing a first liquid, a second container for storing a second liquid, and a working layer located between the first container and the second container; wherein, a nanopore for communicating the first container and the second container is arranged on the working layer, the aperture of the opening for connecting the nanopore, the size of the chamber of the first container and the size of the chamber of the second container on the first container and the second container are at least 100 times of the aperture and the length of the nanopore, the conductivity of the first liquid and the conductivity of the second liquid are not equal and are not mutually soluble, and the first liquid and the second liquid form a liquid-liquid interface in the nanopore;
wherein the inner wall surface of the nanopore is positively charged after the inner wall surface of the nanopore is hydrolyzed in the first liquid; the liquid-liquid interface moves within the nanopore based on electroosmotic flow as the magnitude of the applied voltage between the two open ends of the nanopore changes.
Optionally, the working layer includes: a base portion;
wherein the nanopore is disposed within the base portion, communicating the first reservoir and the second reservoir;
wherein the nanopores in the base portion are obtained by processing the base portion by using focused ion beams or dielectric breakdown technology and depositing a layer of wall material.
Optionally, the working layer includes: a base portion and a suspended support portion;
the nanopore is arranged in the suspended supporting part, the base part is provided with a through hole, the suspended supporting part is opposite to the base part, and the suspended supporting part is connected with the base part from the surface of one side of the base part; the nanopore is opposite to the through hole on the base part; wherein the nanopore communicates the first reservoir and the second reservoir via a through hole in the base portion;
the suspension support part is a two-dimensional material obtained by transferring in the area where the through hole of the base part is located; the nano-pore is obtained by processing the two-dimensional material by using focused ion beams and depositing a layer of wall material.
Optionally, the liquid-liquid interface type memristor further includes: a silicon substrate provided with a through hole; wherein the silicon substrate is positioned between the working layer and the first container or between the working layer and the second container;
the aperture sizes of openings at two ends of the through hole on the silicon substrate are not equal, the smaller opening of the openings at the two ends is connected with the nano-pore canal on the base part, or is connected with the nano-pore canal on the suspended supporting part through the through hole on the base part, and the larger opening of the openings at the two ends is connected with the first container or the second container.
Optionally, the liquid-liquid interface type memristor further comprises: the first silicone rubber pad is arranged between the working layer and the first container, and the second silicone rubber pad is arranged between the silicon substrate and the second container, or the first silicone rubber pad is arranged between the working layer and the second container, and the second silicone rubber pad is arranged between the silicon substrate and the first container;
and the first silica gel pad and the second silica gel pad are provided with through holes with hole central axes consistent with those of the nanopores.
Optionally, an inner wall surface of the nanopore is an aluminum oxide material.
Optionally, the pore size of the nanopores is from 1nm to 2000nm, and the length of the nanopores is from 0.1nm to 500nm.
Optionally, the first liquid is an inorganic salt solution, and the second liquid is an ionic liquid immiscible with the first liquid; wherein the viscosity coefficient of the second liquid is greater than the viscosity coefficient of the first liquid.
Optionally, the conductivity of the inorganic salt solution is not equal to that of the ionic liquid, and the first liquid and the inner wall surface of the nanopore undergo a solid-liquid reaction, so that a region where the inner wall surface of the nanopore contacts the first liquid is charged, so as to perform ion selection on the first liquid; the second liquid does not undergo a solid-liquid reaction with the inner wall surface of the nanopore.
Embodiments also provide a suppressor neurosynaptic device including a liquid-liquid interface type memristor as described in any of the above embodiments;
wherein the liquid-liquid interface type memristor is used as an inhibitory type nerve synapse, and the conductance of the inhibitory type nerve synapse is reduced under the condition that a positive voltage is applied to an inorganic salt solution end of the inhibitory type nerve synapse; wherein the inorganic salt solution end is any one of the first container and the second container, and the liquid in the container corresponding to the inorganic salt solution end is the inorganic salt solution.
Through the above embodiments, the present application provides a liquid-liquid interface type memristor and an inhibitory type neurosynaptic device. Based on the communication of the containers at the two ends of the nanometer pore channel, the first container and the second container realize the storage of two liquids, and the nanometer pore channel with small pore diameter and length can realize the movement of a liquid-liquid interface generated by the immiscible liquids. Accordingly, the embodiment of the application has the following advantages:
the liquid-liquid interface type memristor provided by the embodiment of the application utilizes the nano-pore with small enough size to realize the liquid-liquid interface and hold the movement of the liquid-liquid interface, because the size of the container for storing liquid and the nano-pore has large difference, the resistance of the container section is negligible compared with the resistance of the nano-pore section, because the length of the nano-pore is very short, and in order to achieve the same relative resistance variation, the required voltage pulse width is inversely proportional to the square of the length of the nano-pore, therefore, under the condition that the voltage at two ends of the nano-pore is changed, the pulse time required for obtaining the same relative resistance variation by the liquid-liquid interface type memristor based on the liquid-liquid interface movement under the action of electric seepage is shorter and shorter, that is, the response speed of the device is faster, and the response time of the nano-fluid interface type memristor to the operating voltage is greatly reduced. Because the size of the nanometer pore canal is small enough, the movement of a liquid-liquid interface can be realized by smaller operating voltage, thereby reducing the size of the operating voltage.
According to the inhibitory type nerve synapse device provided by the embodiment of the application, the liquid-liquid interface type memristor in the embodiment is used as the inhibitory type nerve synapse, the conductance of the inhibitory type nerve synapse can be rapidly reduced under the condition that the positive voltage is applied to the inorganic salt solution end of the inhibitory type nerve synapse, the matching of neuron action potentials is achieved through rapid enhanced response, and the performance of the artificial inhibitory type nerve synapse device is further improved.
Drawings
FIG. 1 is a schematic structural diagram of a liquid-liquid interface type memristor provided by an embodiment of the present application;
FIG. 2 is a schematic structural diagram of a first container according to an embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of a working layer of a nanopore provided by an embodiment of the present application;
fig. 4 is a schematic structural diagram of a silicon substrate surface of a nanopore provided by an embodiment of the present application;
FIG. 5 is a schematic illustration of a liquid-liquid interface type memristor provided by an embodiment of the present application;
FIG. 6 is a schematic side view of a working layer according to an embodiment of the present disclosure;
FIG. 7 is a schematic diagram of a structure of yet another liquid-liquid interface type memristor provided by an embodiment of the present application;
FIG. 8 is a schematic structural diagram of a reference electrode provided in an embodiment of the present application;
fig. 9 is a schematic structural diagram of a silicone pad according to an embodiment of the present disclosure;
FIG. 10 is a schematic side view of another working layer provided in an embodiment of the present application;
fig. 11 is a schematic structural diagram of a silicon substrate surface of yet another nanopore provided by an embodiment of the present application;
fig. 12 is a schematic cross-sectional view of another nanopore provided in an embodiment of the present application;
fig. 13 is a schematic structural diagram of a working layer of yet another nanopore provided in an embodiment of the present application.
Reference numerals:
11-a nanopore; 12-a suspended support; 13-a base portion; 21-a first container; 22-a second container; 31-a silicon substrate; 41-a first silicone rubber pad; 42-second silicone pad; 51-a first reference electrode; 52-second reference electrode.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Embodiments of the present application are described below with reference to the accompanying drawings:
referring to fig. 1, fig. 1 is a schematic structural diagram of a liquid-liquid interface type memristor provided in an embodiment of the present application. As shown in fig. 1, embodiments of the present application provide a liquid-liquid interface type memristor, including: a first container 21 for storing a first liquid, a second container 22 for storing a second liquid, and a working layer located between the first container 21 and the second container 22.
Preferably, the first container 21 may be a glass container, and the second container 22 may also be a glass container.
Preferably, the working layer can be a silicon nitride material, and the silicon nitride working layer can be formed in the liquid-liquid interface type memristor.
Further, in order to facilitate adjustment of the amount of liquid in each container, the liquid-liquid interface type memristor may further include: a first pouring hole provided in the first container 21, and a second pouring hole provided in the second container 22; the first pouring hole is used for pouring the first liquid into the first container 21, and the second pouring hole is used for pouring the second liquid into the second container 22.
Referring to fig. 2, fig. 2 is a schematic structural diagram of a first container 21 according to an embodiment of the present disclosure. The first container 21 and the second container 22 are both containers for storing liquid in the liquid-liquid interface type memristor, and the material, the size and the shape of the second container 22 can be the same as those of the first container 21, and the second container 22 is correspondingly arranged on two sides of the working layer. As shown in fig. 2, the first container 21 and the second container 22 may be cylindrical containers provided with a pour hole and one side opening. Wherein, the injection hole may be disposed on the round bottom surface of the cylindrical container, and the one-side opening may be disposed on the circumferential side surface of the cylindrical container, so that the first container 21 and the second container 22 circumferentially cover the nanopore 11 on the working layer.
Referring to fig. 3, fig. 3 is a schematic structural diagram of a working layer of a nanopore 11 according to an embodiment of the present disclosure. Referring to fig. 4, fig. 4 is a schematic structural diagram of a silicon substrate surface of a nanopore 11 according to an embodiment of the present disclosure. In the embodiment of the present application, a double-polished silicon wafer with an oxide layer and a nitride layer on the surface is considered from the aspect of a preparation process to obtain a working layer and a silicon substrate 31, and fig. 3 and 4 show the nanopores 11 from the working layer and the silicon substrate, respectively, as shown in fig. 3 and 4, in the embodiment of the present application, the working layer between the first container 21 and the second container 22 may be an oxide layer and a nitride layer on the surface of a silicon wafer, or may be a two-dimensional material in a sheet form and an oxide layer and a nitride layer on the surface of a silicon wafer, and the contour of the sheet-shaped working layer is not further limited in the embodiment of the present application.
The working layer is provided with a nanopore 11 communicating the first container 21 and the second container 22, the pore diameter of the opening of the nanopore 11, the size of the chamber of the first container and the size of the chamber of the second container on the first container 21 and the second container 22 are at least 100 times of the pore diameter and the length of the nanopore 11, the conductivity of the first liquid and the conductivity of the second liquid are not equal and are not soluble with each other, and the first liquid and the second liquid form a liquid-liquid interface in the nanopore 11.
Specifically, the nanopores 11 may be through holes in the working layer with nanometer-scale preparation precision and size.
The nanopores 11 may be placed in the center of the working layer sheet of two-dimensional material, as shown in figure 3, or in the center of the oxide and nitride layers on the surface of the wafer.
Wherein, the first liquid and the second liquid can be selected from immiscible liquids to form a liquid-liquid interface. The first liquid and the second liquid can be electrolyte solutions with different viscosity coefficients, and the viscosity coefficient of the second liquid is larger, so that the liquid-liquid interface position can be reserved after the external voltage is removed. And the first liquid and the second liquid can adopt electrolyte solutions with different conductivities, and when a liquid-liquid interface moves in the nanopore, the resistance value of the nanopore can be changed due to the difference of the ratio of the two liquids and the conductivities.
To achieve a sufficiently low voltage response time and a small operating voltage, the nanopores 11 may be as small as possible within a practical process technology, and in an alternative embodiment, the nanopores 11 have a pore size of 1nm to 2000nm and the nanopores 11 have a length of 0.1nm to 500nm.
The pore diameter of the openings for connecting the nanopores 11 on the first container 21 and the second container 22 and the size of the chambers of the first container and the second container are at least 100 times of the pore diameter and the length of the nanopores 11, so that the resistance of the liquid along the radial surface in the direction of the nanopores 11 in the containers is far smaller than the resistance of the liquid between two ends of the nanopores 11, and further negligible, the electrical conductance of the liquid between two ends of the nanopores 11 can be regarded as the electrical conductance of a liquid-liquid interface type memristor. Wherein, when the first container 21 and the second container 22 are cylindrical containers, the aperture of the opening of the first container 21 and the second container 22 for connecting the nanopore 11 may also be the diameter of the circumferential side opening of the cylindrical container.
Specifically, the pore size of the opening for connecting the nanopore 11 on the first container 21 and the second container 22 and the size of the chamber of the first container and the second container are at least 100 times larger than the pore size of the nanopore 11 and at least 100 times larger than the length of the nanopore 11. Illustratively, the pore diameter of the nanopore 11 is 5nm, the length of the nanopore 11 is 2nm, and the cylindrical container is connected with the pore diameter of the opening of the nanopore 11, or the circumferential side diameter of the cylindrical container is 5000nm, and the cavity size of the cylindrical container is at least 5000nm.
Further optionally, the pore size of the openings in the first container 21 and the second container 22 connecting the nanopores 11 and the chamber dimensions of the first container and the second container are multiples of more than 3 orders of magnitude of the pore size and the length size of the nanopores 11.
After the inner wall surface of the nanopore 11 is hydrolyzed in the first liquid, the inner wall surface of the nanopore 11 is positively charged, and the second liquid cannot charge the inner wall surface of the nanopore; as the magnitude of the applied voltage between the two open ends of the nanopores 11 changes, the liquid-liquid interface moves within the nanopores 11 based on electroosmotic flow.
Preferably, the first liquid is an inorganic salt solution, and the second liquid is an ionic liquid immiscible with the first liquid; wherein the viscosity coefficient of the second liquid is greater than the viscosity coefficient of the first liquid.
Preferably, the wall surface of the inner wall of the nanopore 11 may be made of an aluminum oxide material.
Further optionally, the conductivity of the inorganic salt solution is not equal to that of the ionic liquid, and the first liquid and the inner wall surface of the nanopore undergo a solid-liquid reaction, so that a region where the inner wall surface of the nanopore contacts the first liquid is charged, so as to perform ion selection on the first liquid; the second liquid does not undergo a solid-liquid reaction with the inner wall surface of the nanopore.
The inorganic salt in the inorganic salt solution is a strong electrolyte, the ionic liquid is an organic weak electrolyte, the conductivity and the viscosity coefficient of the ionic liquid are different, the conductivity of the ionic liquid is lower than that of the inorganic salt solution, and the viscosity coefficient of the ionic liquid is greater than that of the inorganic salt solution.
The embodiments of the present application also provide an example, the first liquid may be a potassium chloride KCl solution, and the second liquid may be a hexafluorophosphate BMIMPF6 solution.
Referring to fig. 5, fig. 5 is a schematic diagram of a liquid-liquid interface type memristor according to an embodiment of the present application. As shown in fig. 5, specifically, the aluminum oxide material may be hydrolyzed in an inorganic salt solution, but is not hydrolyzed in an ionic liquid, a portion of an inner wall surface of the aluminum oxide of the nanopore 11 in the inorganic salt solution is positively charged, the second liquid cannot charge the inner wall surface of the nanopore 11, and the inorganic salt solution forms a double-charge layer with negative charge near the inner wall surface of the nanopore 11, and under the condition that a forward voltage is applied to the inorganic salt solution, under the action of an electric field, an electroosmotic flow pushes a liquid-liquid interface to move toward the first container 21 storing the first liquid, so that the inorganic salt solution in the nanopore 11 is reduced, the solution with low conductivity in the nanopore is increased, the electrical conductance of the nanopore 11 is reduced, that is, the electrical conductance of the liquid-liquid interface type memory is reduced. On the contrary, under the condition that a negative voltage is applied to the inorganic salt solution end, the liquid-liquid interface moves towards the second container 22 for storing the second liquid, so that the inorganic salt solution in the nanopore 11 is increased, the solution ratio with high conductivity in the nanopore is increased, the conductivity of the nanopore 11 is increased, and the conductivity of the liquid-liquid interface type memristor is increased.
And the electric conductance of the liquid in the nanopore 11 changes under the action of the electric field, after the operating voltage is removed, the liquid-liquid interface moves due to the large viscosity coefficient of the ionic liquid and is subjected to large fluid resistance, so that the liquid-liquid interface stops moving after moving for a certain distance under the action of inertia, and the change of the electric conductance of the nanopore 11 under the action of the electric field is fixed, namely, after the current operating voltage is cut off, the electric conductance of the liquid-liquid interface type memristor is kept unchanged under the condition of not reapplying new operating voltage, and the performance that the memristor changes along with the voltage and can maintain the state of the electric conductance, namely, the nonvolatile property is realized.
Through the embodiment, the nano-pore 11 with small enough size is matched with the container with large size order difference, so that the liquid-liquid interface moves in the small-size channel, the liquid level position corresponding to the operating voltage at two ends of the pore can be quickly reached, the response of the liquid-liquid interface type memristor to the applied voltage can be quickly realized, the liquid-liquid interface type memristor with low delay response and low operating voltage is realized, the performance of the memristor is improved, and the application field of the liquid-liquid interface type memristor is favorably expanded.
Referring to fig. 10, fig. 10 is a schematic side view of an operating layer according to an embodiment of the present disclosure. Referring to fig. 11, fig. 11 is a schematic structural diagram of a silicon substrate surface of another nanopore provided in an embodiment of the present application. Referring to fig. 12, fig. 12 is a schematic cross-sectional structure diagram of another nanopore provided in an embodiment of the present application. Referring to fig. 13, fig. 13 is a schematic structural diagram of a working layer of another nanopore provided in an embodiment of the present application. As shown in fig. 10-13, considering that in an ideal situation it is possible to provide the nanopores 11 directly with the base portion 13, in an alternative embodiment, the working layer comprises: a base portion 13.
Wherein the nanopore is disposed within the base portion, communicating the first reservoir and the second reservoir.
Wherein the nanopores in the base portion are obtained by processing the base portion by using focused ion beams or dielectric breakdown technology and depositing a layer of wall material.
Referring to fig. 6, fig. 6 is a schematic side structure diagram of an operating layer according to an embodiment of the present disclosure. As shown in fig. 6, considering that the length of the nanopore 11 needs to be of a small order of magnitude to achieve a fast movement of the liquid-liquid interface, for example, up to 10nm, while the thickness of the working layer, if it is consistent with the length of the nanopore 11, may be difficult to achieve preparation, has poor mechanical properties, results in poor connectivity with the first container 21 and the second container 22, or the working layer is directly broken. Thus, in an alternative embodiment, the present application further provides a working layer comprising: a base portion 13 and a free support portion 12.
The nanometer pore canal is arranged in the suspension support part, the base part 13 is provided with a through hole, the suspension support part is opposite to the base part 13, and the suspension support part is connected with the base part 13 from one side surface of the base part 13; the nanopores are aligned with the through holes in the base portion 13; wherein the nanopores communicate the first and second reservoirs via through-holes in the base portion 13.
Wherein the dangling support is a two-dimensional material obtained by transferring in the area of the through hole of the base portion 13; and the nano pore channel is obtained by processing the two-dimensional material by using a focused ion beam and then depositing a layer of wall material.
Specifically, the nanopore 11 is a through hole in the suspended support 12, the thickness of the suspended support 12 is the same as the length of the nanopore 11, and the thickness of the base 13 is not limited, for example, may be 100nm to 500nm.
The material of the base portion 13 may be a silicon oxide material on the surface of a double-polished silicon wafer, and the suspended support portion 12 may be a two-dimensional material.
Through the embodiment, the nanopore 11 is arranged on the working layer, only the thickness of the suspended supporting part 12 on the working layer is consistent with that of the nanopore 11, the whole thickness of the base part 13 of the working layer cannot influence the moving speed of a liquid-liquid interface, and the voltage response speed of the liquid-liquid interface type memristor, the preparation easiness of the working layer and the supporting performance of the working layer on containers on two sides are guaranteed.
Further, in consideration of the difficulty of fabricating the nano-pores, the dangling support 12 may be made of a thinned two-dimensional material, and in an alternative embodiment, the present application further provides a working layer, wherein the dangling support 12 is a two-dimensional material obtained by transferring in a region where the through hole of the base portion 13 is located; the nanopores 11 are obtained by processing the two-dimensional material by using focused ion beams and depositing a layer of wall material.
Referring to fig. 7, fig. 7 is a schematic structural diagram of another liquid-liquid interface type memristor provided in an embodiment of the present application. As shown in fig. 7, in order to facilitate the overall preparation of the liquid-liquid interface type memristor, semiconductor processing is performed on the silicon substrate 31, in the embodiment of the present application, from the aspect of a preparation process, a double polished silicon wafer with an oxide layer and a nitride layer covered on a surface is considered to be processed to obtain a working layer and the silicon substrate 31, in an optional implementation, the present application further provides a liquid-liquid interface type memristor, and the liquid-liquid interface type memristor further includes: a silicon substrate 31 provided with a through hole; wherein the silicon substrate 31 is located between the working layer and the first container 21 or between the working layer and the second container 22.
The through hole of the silicon substrate 31 communicates the nanopore 11 with the opening of the container, and also reduces the resistance of the liquid in the through hole of the silicon substrate 31, wherein the pore sizes of the openings at the two ends of the through hole on the silicon substrate are not equal, the smaller opening of the openings at the two ends is connected with the nanopore 11 on the base part, or is connected with the nanopore on the suspended support part through the through hole on the base part, and the larger opening of the openings at the two ends is connected with the first container 21 or the second container 22.
Therefore, the through holes of the silicon substrate 31 can complete natural transition from hole to hole under the condition that the nanometer pore channel 11 and the container are connected, and influence on conductance of the memristor is reduced as much as possible.
The silicon substrate 31 and the working layer may be processed from the same double-side polished silicon wafer, or the silicon substrate 31 and the base portion of the working layer may be processed from the same double-side polished silicon wafer.
In an alternative embodiment, as shown in fig. 7, the present application further provides a liquid-liquid interface type memristor, further comprising: a first reference electrode 51 arranged in the first liquid is immersed in the first container 21, and a second reference electrode 52 arranged in the second liquid is immersed in the second container 22.
The first reference electrode 51 and the second reference electrode 52 form a circuit loop that is connected in series with the liquid in the nanopore 11 via the first liquid and the second liquid.
Referring to fig. 8, fig. 8 is a schematic structural diagram of a reference electrode according to an embodiment of the present application. As shown in fig. 8, the reference electrode may be elongated to be immersed into the liquid in the container through the fill hole to provide an operating voltage across the liquid-liquid interface type memristor. Specifically, the operating voltage at the two ends of the liquid-liquid interface type memristor can be input through the first reference electrode 51 and the second reference electrode 52, and because the size of the container and the size of the pore size of the nanopore 11 have magnitude difference, the resistance of the liquid in the container can be ignored, and the operating voltage can be regarded as being directly applied to the two ends of the nanopore 11 through the first reference electrode 51 and the second reference electrode 52. The first reference electrode 51 and the second reference electrode 52 may be made of the same material and have the same dimensions and shapes.
In an alternative embodiment, as shown in fig. 7, the present application further provides a liquid-liquid interface type memristor, further comprising: a first silicone rubber pad 41 arranged between the working layer and the first container 21 and a second silicone rubber pad 42 arranged between the silicon substrate 31 and the second container 22, or a first silicone rubber pad 41 arranged between the working layer and the second container 22 and a second silicone rubber pad 42 arranged between the silicon substrate 31 and the first container 21.
Referring to fig. 9, fig. 9 is a schematic structural diagram of a silica gel pad provided in the embodiment of the present application. As shown in fig. 9, through holes are provided on the first silicone pad 41 and the second silicone pad 42. The first silicone pad 41 and the second silicone pad 42 may be made of the same material and have the same size and shape.
The silica gel pad can play a role in sealing, so that the nanopore 11 is tightly connected with the first container 21 and the second container 22 on two sides through the through hole in the base part 13 and the through hole in the silicon substrate 31, and liquid leakage is prevented.
Wherein, the through-hole on the silica gel pad of working layer one side can be greater than the working layer size. The through hole on the silica gel pad on one side of the silicon substrate 31 can also be larger than the larger opening in the openings at the two ends of the through hole on the silicon substrate 31, so that the communication between the two ends is not influenced while the sealing effect is achieved.
In an alternative embodiment, the present application also provides a method wherein the inner wall surface of the nanopores 11 is an alumina material; wherein, the inner wall surface of the nano-pore 11 is obtained by processing a pore on the working layer by using a focused ion beam or a dielectric breakdown technology and performing ALD deposition on the pore.
Working layer exemplarily, when the working layer is an alumina material, a nanopore 11 via hole with accuracy and size of nanometer scale can be prepared on the working layer by focused ion beam FIB.
When the working layer comprises a silicon nitride material and an aluminum oxide material, a through hole with the nanometer-scale nanopore 11 with the precision and the size can be prepared on the working layer through focused ion beam FIB, and the nanometer-scale nanopore 11 with the aluminum oxide material on the inner wall surface can be obtained in the through hole through ALD atomic layer deposition.
With reference to the foregoing embodiment, taking the preparation of the nanopore 11 with the inner wall surface material being alumina as an example, the embodiment of the present application further provides an example of a method for preparing the liquid-liquid interface type memristor according to any of the foregoing embodiments, including:
step S101, according to a preset layout, photoetching is carried out on a double-polished silicon wafer from one side surface of the double-polished silicon wafer; wherein, the upper surface of the double polished silicon wafer is
A nitride layer having a lower surface
A silicon wafer with oxide layers polished on both sides; wherein, the nitride layer can be a silicon nitride material, and the oxide layer can be a silicon oxide material;
step S102, developing and etching the nitride layer and the oxide layer of the double polished silicon wafer from the photoetching surface of the double polished silicon wafer to prepare larger openings in the openings at the two ends of the through hole on the silicon substrate 31, and removing photoresist by a dry method;
step S103, etching the silicon substrate of the double-polished silicon wafer from the side surface of the double-polished silicon wafer which is subjected to developing and etching by using potassium hydroxide (KOH) until an oxide layer on the other side surface of the double-polished silicon wafer which is not subjected to photoetching and etching stops, and then performing potassium ion removal (K < + >) cleaning to prepare a through hole on the silicon substrate 31 and a smaller opening in openings at two ends of the through hole;
step S104, obtaining a nanometer pore canal 11 on a nitride layer and an oxide layer from the surface of the nitride layer on the other side surface of the double polished silicon wafer, which is not subjected to photoetching and etching, through a focused ion beam FIB, thereby obtaining a working layer with a through hole of the nanometer pore canal 11; wherein, the through holes of the nanometer pore canal 11 on the working layer are aligned with the through hole patterns on the silicon substrate 31;
step S105, depositing a layer of alumina on the suspended working layer by using an ALD (Atomic layer deposition) Atomic layer to prepare the nanopore 11 with the alumina material on the inner wall surface.
Step S106, respectively clamping the prepared double-polished silicon wafer with the nanometer pore canal 11 and the through hole of the silicon substrate 31 between two glass containers through two silica gel pads with holes to obtain the liquid-liquid interface type memristor shown in the figure 11-13; the liquid-liquid interface type memristor can be used as a nanopore suppression type nerve synapse device, and as the forward voltage is applied to the first liquid end of the nanopore 11, the conductance of the liquid in the nanopore 11 is correspondingly increased, so that the suppression type artificial nerve synapse function is realized.
Through the embodiment, the double polished silicon wafer is matched with the traditional etching and higher-precision focused ion beam process, the nanometer pore canal 11 is used as a space for containing liquid and moving the liquid, the preparation of the liquid-liquid interface type memristor capable of quickly responding to voltage and changing the conductance of the device is realized, namely, the preparation of the nanometer pore canal inhibition type nerve synapse device with low delay and low operating voltage is realized, the preparation method can be used for realizing the matching of neuron action potentials, and the performance of the inhibition type artificial nerve synapse device is improved.
In view of the above, the embodiments of the present application provide a liquid-liquid interface type memristor capable of feeding back an enhanced response to an external applied operating voltage, that is, applying a forward voltage to a first liquid terminal, the liquid-liquid interface type memristor has reduced conductance, low response time delay and small operating voltage, and can be used as an artificial neurosynaptic device, and therefore, based on the same inventive concept, embodiments of the present application further provide a inhibitory type neurosynaptic device, which includes the liquid-liquid interface type memristor according to any of the above embodiments;
wherein the liquid-liquid interface type memristor is used as an inhibitory type nerve synapse, and the conductance of the inhibitory type nerve synapse is reduced under the condition that a positive voltage is applied to an inorganic salt solution end of the inhibitory type nerve synapse; wherein the inorganic salt solution end is any one of the first container and the second container, and the liquid in the container corresponding to the inorganic salt solution end is the inorganic salt solution.
The embodiments in the present specification are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
Finally, it should also be noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrases "comprising one of 8230; \8230;" 8230; "does not exclude the presence of additional like elements in a process, method, article, or apparatus that comprises that element.
The liquid-liquid interface type memristor and the inhibitory type neurosynaptic device provided by the application are described in detail, specific examples are applied in the description to explain the principle and the implementation of the application, and the description of the above embodiments is only used for helping to understand the method and the core idea of the application; meanwhile, for a person skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.
Other embodiments of the present application will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the application being indicated by the following claims.
It will be understood that the present application is not limited to the precise arrangements that have been described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof. The structures shown in the drawings and described in the specification provided herein are illustrative only and are not intended to limit the scope of the embodiments provided herein to particular dimensions or positional structures. The scope of the application is limited only by the appended claims.
Reference herein to "one embodiment," "an embodiment," or "one or more embodiments" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present application. Moreover, it is noted that instances of the word "in one embodiment" are not necessarily all referring to the same embodiment.
In the description provided herein, numerous specific details are set forth. However, it is understood that embodiments of the application may be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description.
In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The application may be implemented by means of hardware comprising several distinct elements, and by means of a suitably programmed computer. In the unit claims enumerating several means, several of these means can be embodied by one and the same item of hardware. The usage of the words first, second and third, etcetera do not indicate any ordering. These words may be interpreted as names.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions in the embodiments of the present application.
Claims (10)
1. A liquid-liquid interface type memristor, comprising: a first container for storing a first liquid, a second container for storing a second liquid, and a working layer located between the first container and the second container; wherein, a nanopore for communicating the first container and the second container is arranged on the working layer, the aperture of the opening for connecting the nanopore, the size of the chamber of the first container and the size of the chamber of the second container on the first container and the second container are at least 100 times of the aperture and the length of the nanopore, the conductivity of the first liquid and the conductivity of the second liquid are not equal and are not mutually soluble, and the first liquid and the second liquid form a liquid-liquid interface in the nanopore;
wherein the inner wall surface of the nanopore is positively charged after the inner wall surface of the nanopore is hydrolyzed in the first liquid; the liquid-liquid interface moves within the nanopore based on electroosmotic flow as the magnitude of the applied voltage between the two open ends of the nanopore changes.
2. The liquid-liquid interface type memristor according to claim 1, wherein the working layer comprises: a base portion;
wherein the nanopore is disposed within the base portion, communicating the first reservoir and the second reservoir;
wherein the nanopores in the base portion are obtained by processing the base portion by using focused ion beams or dielectric breakdown technology and depositing a layer of wall material.
3. The liquid-liquid interface type memristor according to claim 1, wherein the working layer comprises: a base portion and a suspended support portion;
the nanopore is arranged in the suspended supporting part, the base part is provided with a through hole, the suspended supporting part is opposite to the base part, and the suspended supporting part is connected with the base part from the surface of one side of the base part; the nanopore is opposite to the through hole on the base part; wherein the nanopore communicates the first reservoir and the second reservoir via a through hole in the base portion;
the suspension support part is a two-dimensional material obtained by transferring in the area where the through hole of the base part is located; the nano-pore is obtained by processing the two-dimensional material by using focused ion beams and depositing a layer of wall material.
4. The liquid-liquid interface type memristor according to claim 3, further comprising: a silicon substrate provided with a through hole; wherein the silicon substrate is positioned between the working layer and the first container or between the working layer and the second container;
the aperture sizes of the openings at the two ends of the through hole on the silicon substrate are not equal, the smaller opening of the openings at the two ends is connected with the nano pore canal on the base part, or the through hole on the base part is connected with the nano pore canal on the suspended supporting part, and the larger opening of the openings at the two ends is connected with the first container or the second container.
5. The liquid-liquid interface type memristor according to claim 4, further comprising: the first silicone rubber pad is arranged between the working layer and the first container, and the second silicone rubber pad is arranged between the silicon substrate and the second container, or the first silicone rubber pad is arranged between the working layer and the second container, and the second silicone rubber pad is arranged between the silicon substrate and the first container;
and the first silica gel pad and the second silica gel pad are provided with through holes with hole central axes consistent with those of the nanopores.
6. The liquid-liquid interface-type memristor according to claim 1, wherein the inner wall surface of the nanopores is an aluminum oxide material.
7. The liquid-liquid interface-type memristor according to claim 1, wherein the pore size of the nanopores is 1nm to 2000nm, and the length of the nanopores is 0.1nm to 500nm.
8. The liquid-liquid interface-type memristor according to claim 1, wherein the first liquid is an inorganic salt solution, the second liquid is an ionic liquid immiscible with the first liquid; wherein the viscosity coefficient of the second liquid is greater than the viscosity coefficient of the first liquid.
9. The liquid-liquid interface-type memristor according to claim 8, wherein the electrical conductivity of the inorganic salt solution is not equal to the electrical conductivity of the ionic liquid, and the first liquid undergoes a solid-liquid reaction with the inner wall surface of the nanopore, so that a region where the inner wall surface of the nanopore is in contact with the first liquid is charged, so as to perform ion selection on the first liquid; the second liquid does not undergo a solid-liquid reaction with the inner wall surface of the nanopore.
10. An inhibitory neurosynaptic device, comprising the liquid-liquid interface type memristor according to any one of claims 1-9;
wherein the liquid-liquid interface type memristor is used as an inhibitory type nerve synapse, and the conductance of the inhibitory type nerve synapse is reduced under the condition that a positive voltage is applied to an inorganic salt solution end of the inhibitory type nerve synapse; wherein the inorganic salt solution end is any one of the first container and the second container, and the liquid in the container corresponding to the inorganic salt solution end is the inorganic salt solution.
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