CN115274949A - Light emitting diode and preparation method thereof - Google Patents

Light emitting diode and preparation method thereof Download PDF

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Publication number
CN115274949A
CN115274949A CN202210868219.8A CN202210868219A CN115274949A CN 115274949 A CN115274949 A CN 115274949A CN 202210868219 A CN202210868219 A CN 202210868219A CN 115274949 A CN115274949 A CN 115274949A
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layer
quantum well
emitting diode
type
light emitting
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Inventor
李森林
毕京锋
王亚宏
薛龙
廖寅生
赖玉财
谢岚驰
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Xiamen Silan Advanced Compound Semiconductor Co Ltd
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Xiamen Silan Advanced Compound Semiconductor Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

Disclosed are a light emitting diode and a method for manufacturing the same, the light emitting diode including: a substrate; a bonding metal layer on the substrate; a P-type semiconductor layer on the bonding metal layer; a multi-quantum well layer on the P-type semiconductor layer; an N-type semiconductor layer on the MQW layer; a first electrode connected to the N-type semiconductor layer; and a second electrode connected to the P-type semiconductor layer; the N-type semiconductor layer comprises a quantum well absorption layer, and the quantum well absorption layer is of a quantum well structure with at least one period and is used for absorbing partial share of radiated light of the multiple quantum well layer. According to the light emitting diode and the preparation method thereof disclosed by the embodiment of the invention, the quantum well absorption layer is additionally arranged on the light emitting side of the light emitting diode, and the radiant light of the multiple quantum well layer is filtered through the epitaxial structure of the light emitting diode under the condition that an additional filtering device is not needed.

Description

Light emitting diode and preparation method thereof
Technical Field
The invention relates to the technical field of semiconductors, in particular to a light-emitting diode and a preparation method thereof.
Background
In recent years, with the development of market demand, the field of infrared lighting is rapidly developed. The light in the near-infrared band (780 nm-1050 nm) is invisible to human eyes, and the infrared light-emitting diode in the near-infrared band is widely applied to the field of security monitoring due to the characteristics of low cost, long service life and energy conservation.
The conventional silicon detector has better response characteristics in the 850nm wave band, and the response is reduced along with the increase of the wave length. However, the quantum well of the near infrared light emitting diode with the wavelength of 850nm still has weak radiant quantity at the wave band lower than 900nm due to the light emitting characteristic, and can be perceived as red light by human eyes, namely the phenomenon of 'red storm'. The near infrared led with a wavelength of 940nm has less "red-storm" phenomenon, but the response of the silicon detector is poor. Therefore, in order to reduce the amount of radiation below the peak wavelength and also to take into account the response characteristics of conventional silicon detectors, the ir led without the "red storm" phenomenon has a higher application value, and thus it is important to eliminate the "red storm" phenomenon in the ir led.
Disclosure of Invention
In view of the above problems, an object of the present invention is to provide a light emitting diode and a method for manufacturing the same, which can suppress the share of short wavelength radiation.
An aspect of the present invention provides a light emitting diode including:
a substrate;
a bonding metal layer on the substrate;
a P-type semiconductor layer on the bonding metal layer;
a multi-quantum well layer on the P-type semiconductor layer;
an N-type semiconductor layer on the multi-quantum well layer;
a first electrode connected to the N-type semiconductor layer; and
a second electrode connected to the P-type semiconductor layer;
the N-type semiconductor layer comprises a quantum well absorption layer, and the quantum well absorption layer is of a quantum well structure with at least one period and is used for absorbing partial share of radiated light of the multiple quantum well layer.
Preferably, the transition radiation wavelength of the quantum well absorption layer is smaller than the radiation wavelength of the multiple quantum well layer.
Preferably, a difference between a transition radiation wavelength of the quantum well absorption layer and a radiation wavelength of the multiple quantum well layer is not less than 30nm.
Preferably, the N-type semiconductor layer includes:
the N-side space layer is positioned on the multi-quantum well layer;
an N-type confinement layer located on the N-side spatial layer;
the N-type current spreading layer is positioned on the N-type limiting layer; and
and the N-type contact layer is positioned on the N-type current spreading layer.
Preferably, the quantum well absorption layer is located in the N-type current spreading layer or between the N-type current spreading layer and the N-type confinement layer.
Preferably, the P-type semiconductor layer includes:
the P-type contact layer is positioned on the metal bonding layer;
the P-type current expansion layer is positioned on the P-type contact layer;
the P-type limiting layer is positioned on the P-type current spreading layer; and
and the P-side spatial layer is positioned on the P-type limiting layer.
Preferably, the materials of the well layer of the multiple quantum well layer and the well layer of the quantum well absorption layer include InGaAs, and the materials of the barrier layer of the multiple quantum well layer and the barrier layer of the quantum well absorption layer include GaAs, alGaAs, or AlGaAsP.
Preferably, a material of the quantum well absorption layer is the same as or different from a material of the multiple quantum well layer.
Preferably, the material of the well layer of the quantum well absorption layer is InxGa1-xAs, x component is 0-20%; the barrier layer of the quantum well absorption layer is made of AlyGa1-yAszP1-zThe y component is 0-50%, and the z component is 70-100%.
Preferably, an In composition of a material of a well layer of the quantum well absorption layer is smaller than an In composition of a material of a well layer of the multiple quantum well layer.
Preferably, the thickness of the well layer of the quantum well absorption layer is greater than the thickness of the well layer of the multiple quantum well layer.
Preferably, in the quantum well absorption layer having two or more periods, the well layers of the quantum well absorption layer In each period have the same or different In composition.
Preferably, the quantum well absorption layer has two or more periods, and the quantum well absorption layer has the same or different thickness in each period.
Preferably, the quantum well absorption layer is a doped superlattice structure, and the doping type of the quantum well absorption layer is N-type.
Preferably, the Al composition and doping concentration of the barrier layer of the quantum well absorption layer are the same as those of the N-type current spreading layer.
Preferably, the barrier layer of the quantum well absorption layer has a thickness greater than 30nm and less than 200nm.
Preferably, the number of cycles of the quantum well absorption layer is 1 to 30.
Another aspect of the present invention provides a method for manufacturing a light emitting diode, including:
sequentially forming an N-type semiconductor layer, a multi-quantum well layer and a P-type semiconductor layer on a growth substrate;
forming a bonding metal layer on the P-type semiconductor layer;
bonding the epitaxial layer on the growth substrate and the substrate together through the bonding metal layer;
removing the growth substrate to expose the N-type semiconductor layer;
forming a first electrode on one side of the N-type semiconductor layer; and
forming a second electrode on one side of the P-type semiconductor layer;
the N-type semiconductor layer comprises a quantum well absorption layer, and the quantum well absorption layer is provided with a quantum well structure with at least one period and is used for absorbing a part of radiation light of the multiple quantum well layer.
Preferably, the transition radiation wavelength of the quantum well absorption layer is smaller than the radiation wavelength of the multiple quantum well layer.
Preferably, a difference between a transition radiation wavelength of the quantum well absorption layer and a radiation wavelength of the multiple quantum well layer is not less than 30nm.
Preferably, the method of forming the N-type semiconductor layer includes: and sequentially forming an N-type contact layer, an N-type current expansion layer, an N-type limiting layer and an N-side space layer on the substrate.
Preferably, the quantum well absorption layer is formed in the N-type current spreading layer, or between the N-type current spreading layer and the N-type confinement layer.
Preferably, the method of forming the P-type semiconductor layer includes: and forming a P-side space layer, a P-type limiting layer, a P-type current expanding layer and a P-type contact layer on the multi-quantum well layer in sequence.
Preferably, the material of the well layer of the multiple quantum well layer and the well layer of the quantum well absorption layer includes InGaAs, and the material of the barrier layer of the multiple quantum well layer and the barrier layer of the quantum well absorption layer includes GaAs, alGaAs, or AlGaAsP.
Preferably, the material of the quantum well absorption layer is the same as or different from the material of the multiple quantum well layer.
Preferably, the material of the well layer of the quantum well absorption layerIs InxGa1-xAs, x component is 0-20%; the barrier layer of the quantum well absorption layer is made of AlyGa1-yAszP1-zThe y component is 0-50%, and the z component is 70-100%.
Preferably, an In composition of a material of a well layer of the quantum well absorption layer is smaller than an In composition of a material of a well layer of the multiple quantum well layer.
Preferably, the thickness of the well layer of the quantum well absorption layer is greater than the thickness of the well layer of the multiple quantum well layer.
Preferably, in the quantum well absorption layer having two or more periods, the well layers of the quantum well absorption layer In each period have the same or different In composition.
Preferably, in the quantum well absorption layer having two or more periods, the quantum well absorption layer has the same or different thickness in each period.
Preferably, the quantum well absorption layer is a doped superlattice structure, and the doping type of the quantum well absorption layer is N-type.
Preferably, the Al composition and doping concentration of the barrier layer of the quantum well absorption layer are the same as those of the N-type current spreading layer.
Preferably, the thickness of the barrier layer in the quantum well absorption layer is greater than 30nm and less than 200nm.
Preferably, the number of cycles of the quantum well absorption layer is 1 to 30.
Preferably, the method further comprises forming an etch stop layer on the growth substrate, wherein the etch stop layer is positioned between the growth substrate and the N-type semiconductor layer;
and removing the corrosion stop layer when the growth substrate is removed.
According to the light emitting diode and the preparation method thereof disclosed by the embodiment of the invention, the quantum well absorption layer is additionally arranged in the N-type semiconductor layer of the light emitting diode, and the radiation light of the multiple quantum well layer is effectively absorbed through the epitaxial structure of the light emitting diode under the condition that an additional filtering device is not needed, so that filtering is realized, and the occurrence of a red storm phenomenon is inhibited.
Further, the quantum well absorption layer has a structure in which well layers and barrier layers are alternately stacked, and has a stronger photon trapping capability than a heterojunction or a single-layer structure.
Furthermore, by setting the In component In the well layer material of the quantum well absorption layer and the thickness of the well layer of the quantum well absorption layer, the transition radiation wavelength of the conduction band bottom and the valence band top of the quantum well absorption layer is smaller than the radiation wavelength of the multiple quantum well layer, so that the short wavelength share radiated by the multiple quantum well layer can be effectively absorbed, and on one hand, the short wavelength share In the light radiation of the multiple quantum well layer is filtered, and the red storm phenomenon is inhibited; on the other hand, the absorbed short-wavelength portion can form new carriers, so that additional carrier portions are contributed to the light-emitting diode, and the internal quantum efficiency of the light-emitting diode is improved to a certain extent.
Furthermore, the quantum well absorption layer is arranged on one side of the light emitting surface and is positioned in the current expansion layer far away from the spatial layer or is positioned between the limiting layer and the current expansion layer far away, so that the influence on the recombination efficiency of the multiple quantum well layer is reduced.
Furthermore, the well layer of each period of the quantum well absorption layer is provided with a composition and a thickness gradually changing structure, so that the quantum well absorption layer can absorb photons with different energies, the absorption of light with different wavelengths is further realized, and a better filtering effect is achieved.
Furthermore, the doping type of the quantum well absorption layer is N-type doping, so that carriers in the quantum well absorption layer can smoothly transit to the multiple quantum well layer to complete recombination.
Further, the thickness of the barrier layer of the quantum well absorption layer is more than 30nm and less than 200nm. The barrier layer with larger thickness is arranged, so that the absorption of the quantum well absorption layer on visible light is avoided.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent from the following description of embodiments of the present invention with reference to the accompanying drawings, in which:
fig. 1 shows a schematic structural diagram of a light emitting diode according to an embodiment of the invention;
fig. 2a-2f show sectional views of the middle stage of the method for manufacturing a light emitting diode according to an embodiment of the present invention.
Detailed Description
Various embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Like elements in the various figures are denoted by the same or similar reference numerals. For purposes of clarity, the various features in the drawings are not drawn to scale.
The invention will be described in more detail below with reference to the accompanying drawings. Like elements in the various figures are denoted by like reference numerals. For purposes of clarity, the various features in the drawings are not necessarily drawn to scale. In addition, certain well known components may not be shown. For simplicity, the semiconductor structure obtained after several steps can be described in one figure.
It will be understood that when a layer or region is referred to as being "on" or "over" another layer or region in describing the structure of the device, it can be directly on the other layer or region or intervening layers or regions may also be present. And, if the device is turned over, one region may be "under" or "beneath" another region.
If the description is directed to the case of being directly on another layer or another region, the description will be given by the expression "directly on 8230; \8230; above or" on 8230; \8230; above and adjacent to it ".
The following detailed description of the present invention is provided in connection with the accompanying drawings and examples.
Fig. 1 shows a schematic structural diagram of a light emitting diode according to an embodiment of the invention; the light emitting diode according to the embodiment of the present invention is an infrared reversed-polarity light emitting diode, and light radiation of the multiple quantum well layer 22 is finally emitted at one side of the N-type semiconductor layer 23. As shown in fig. 1, the light emitting diode includes a substrate 100, a metal bonding layer S1 on the substrate 100, an epitaxial layer 200 on the metal bonding layer S1, a first electrode 500 on the epitaxial layer 200, and a second electrode 400 on a side of the substrate 100 away from the metal bonding layer S1.
The epitaxial layer 200 sequentially comprises in a direction perpendicular to the substrate from bottom to top: a P-type semiconductor layer 21, a multiple quantum well layer (active layer) 22, and an N-type semiconductor layer 23. The P-type semiconductor layer 21 sequentially comprises a P-type contact layer 211, a P-type current expansion layer 212, a P-type limiting layer 213 and a P-side space layer 214 from bottom to top; the N-type semiconductor layer 23 includes an N-side space layer 231, an N-type confinement layer 232, an N-type current spreading layer 233, and an N-type contact layer 234 from bottom to top in sequence.
The metal bonding layer S1 is located between the substrate 100 and the P-type semiconductor layer 21, specifically, between the substrate 100 and the P-type contact layer 211. The metal bonding layer S1 may include a mirror reflection structure and a current spreading structure.
In this embodiment, the quantum well absorption layer S0 is located between the N-type confinement layer 232 and the N-type current spreading layer 233, and in other embodiments, the quantum well absorption layer S0 may also be located in the N-type current spreading layer 233.
The substrate 100 is a conductive substrate, in this embodiment, the substrate 100 is a Si substrate, and the epitaxial layer 200 may be a single crystal or polycrystalline structure including one or more of doped or undoped AlGaAs/AlInGaAs/InGaAs/AlGaAsP material systems, but is not limited thereto.
The multiple quantum well layer 22 includes a quantum well structure composed of well layers and barrier layers alternately stacked, the material of the well layers of the multiple quantum well layer 22 may be InGaAs, and the material of the barrier layers of the multiple quantum well layer 22 may be GaAs, alGaAs, or AlGaAsP. In a specific embodiment, the well layer of the multiple quantum well layer 22 is InxGa1-xAs system material, wherein, x component is 5-20%; the barrier layer of the multiple quantum well layer 22 is AlyGa1-yAszP1-zThe system material, wherein the y component is 0 to 50 percent; the component z is 70-100%.
The material system of the multiple quantum well layer 22 is selected to realize the spectral emission of the peak wavelength of the multiple quantum well layer 22 in the near infrared band; and the In component x of the well layer of the multiple quantum well layer 22 is controlled to be 5-20%, and the multiple quantum well layer 22 and the substrate 100 have lower lattice mismatch due to the selection of the InGaAs material with low In component, so that the growth quality of the subsequent epitaxial layer 200 is ensured.
The quantum well absorption layer S0 is a periodic structure with at least one period, and the range of the period number is 1-30. The material of the well layer of the quantum well absorption layer S0 may be InGaAs, and the material of the barrier layer of the quantum well absorption layer S0 may be GaAs, alGaAs, or AlGaAsP. The materials of the quantum well absorption layer S0 and the multiple quantum well layer 22 may be the same or different. In this embodiment, the material of the quantum well absorption layer S0 is the same as the material of the multiple quantum well layer 22, but the composition and thickness are different, so that the peak wavelength of the quantum well absorption layer S0 is also in the near-infrared spectral emission and has a lower lattice mismatch with the substrate 100.
Specifically, the In composition of the material of the well layer of the quantum well absorption layer S0 is smaller than the In composition of the material of the well layer of the multiple quantum well layer 22; the thickness of the well layer of the quantum well absorption layer S0 is greater than the thickness of the well layer of the multiple quantum well layer 22.
In a preferred embodiment, the well layers of the mqw layer 22 are Inx1Ga1-x1As system material, x1 component is 5-20%; the barrier layer of the multiple quantum well layer 22 is Aly1Ga1-y1Asz1P1-z1The y1 component is 0-50%; the component z1 accounts for 70 to 100 percent; the well layer of the quantum well absorption layer S0 is Inx2Ga1-x2As system material, x2 component is 0-20%; the barrier layer of the quantum well absorption layer S0 is Aly2Ga1-y2Asz2P1-z2The y2 component is 0-50%; the component z2 accounts for 70-100%. The thickness of the well layer in the multiple quantum well layer 22 is t1, and the thickness of the well layer in the quantum well absorption layer S0 is t2. Wherein, x2<x1，t2>t1。
By setting the In component of the well layer material In the quantum well absorption layer S0 and the thickness of the well layer of the quantum well absorption layer S0, the transition radiation wavelength of the conduction band bottom and the valence band top of the quantum well absorption layer S0 is smaller than the radiation wavelength of the multiple quantum well layer 22, so that the light with the wavelength smaller than or equal to the transition wavelength is strongly absorbed, and the purpose of filtering is achieved. Wherein, the larger the number of cycles of the quantum well absorption layer S0 is, the stronger the ability to absorb light is.
In a specific embodiment, the peak emission wavelength of the mqw layer 22 is, for example, 940nm, and the transition emission wavelength (absorption peak wavelength) of the conduction band bottom and valence band top of the quantum well absorption layer S0 should be less than 940nm, preferably 910nm (completely invisible), that is, 30nm less than the peak emission wavelength of the mqw layer 22.
Because the refractive index of the semiconductor material is much larger than that of air, light emitted by the multiple quantum well layer 22 can be reflected for multiple times in the epitaxial layer 200, and light radiation of the multiple quantum well layer 22 is emitted after passing through the quantum well absorption layer S0 on the light emitting side of the light emitting diode, so that most of the emitted light is filtered, and the filtering function is realized.
Further, based on the photoluminescence theory, photons with large energy (short waves) can excite photons with small energy (long waves), and the quantum well absorption layer S0 forms new carriers after absorbing the radiation fraction with short wavelengths, thereby contributing to additional carrier fractions and improving the internal quantum efficiency of the light emitting diode to a certain extent.
Further, when the number of cycles of the quantum well absorption layer S0 is 2 or more, the In composition of the materials of the well layers In the quantum well absorption layer S0 may be the same or different. The thickness of the well layer in each period in the quantum well absorption layer S0 may be the same or different.
In a specific embodiment, the In compositions of the materials of the well layers In the quantum well absorption layer S0 are different from each other. The thickness of the well layer in each period of the quantum well absorption layer S0 is different. In this embodiment, the quantum well absorption layer S0 includes N periods of well layers and barrier layers.
Specifically, the first period of the quantum well absorber layer S0 includes: a first well layer and a first barrier layer; the second period includes: a second well layer and a second barrier layer; 8230; the nth cycle includes: an Nth well layer and an Nth barrier layer.
The well layer structure comprises a first well layer, a second well layer, \ 8230, and an Nth well layer, wherein the material and the composition of the Nth well layer are respectively as follows:
Inx11Ga1-x11As，
Inx22Ga1-x22As，
…，
Inx2nGa1-x2nAs，
wherein x21, x22, \8230, x2n composition is 0-20%, composition x21< x22< \8230, < x2n, and x21, x22, \8230, x2n is less than In composition In each period In the multiple quantum well layer 22. In other embodiments, the composition x21> x22> \8230 ≧ x2n may be set, where x21, x22, \8230isonly required, and x2n is smaller than the In composition In each period In the mqw layer 22.
The first base layer, the second base layer, \ 8230, the Nth base layer is made of the following materials and components:
Aly21Ga1-y21Asz21P1-z21，
Aly22Ga1-y22Asz22P1-z22，
…，
Aly2nGa1-y2nAsz2nP1-z2n，
wherein, y21, y22, \8230, y2n components are all 0-50%; z21, z22, \ 8230, and z2n components are all 70-100%.
The quantum well absorption layer S0 has a well layer thickness of t21 in the first period, a well layer thickness of t22, \ 8230in the second period, and a well layer thickness of t2N in the Nth period. Wherein t21, t22, \ 8230;, < t2n are all larger than the well layer thickness of each period in the multiple quantum well layer 22, and t21< t22< \ 8230; < t2n. Further, t22= a × t21+ t21, t23= a × t21+ t22, i.e., t2n = t21+ a × (n-1) × t21; and a ranges from 0 to 0.3.
The first period, the second period, \8230, and the Nth period can be randomly arranged at the position in the quantum well absorption layer S0.
The well layer of the quantum well absorption layer S0 is set to be of a structure with gradually changed components and thickness, so that the quantum well absorption layer S0 can absorb photons with different energies, absorption of different wavelengths is further realized, and a better filtering effect is achieved.
Further, the doping type of the quantum well absorption layer S0 is N-type doping, for example, silicon (Si) or tellurium (Te) may be doped, so that carriers in the quantum well absorption layer S0 can smoothly transit to the multiple quantum well layer 22 to complete recombination.
Further, the barrier layer of the quantum well absorption layer S0 has the same Al composition and doping concentration as the N-type current spreading layer 233.
Further, the barrier layer of the quantum well absorption layer S0 has a thickness greater than 30nm and less than 200nm. If the thickness of the barrier layer of the quantum well absorption layer S0 is too thin, the smaller the In component In the InGaAs well layer is required, intrinsic absorption is easily generated. By arranging the barrier layer with larger thickness, the absorption of the quantum well absorption layer S0 on visible light is avoided.
Fig. 2a to 2f are schematic sectional views showing a middle stage of a method for manufacturing a light emitting diode according to an embodiment of the present invention. A method for manufacturing a light emitting diode according to an embodiment of the present invention will be described with reference to fig. 2a to 2 f.
As shown in fig. 2a, an etch stop layer 301 is formed on a growth substrate 300, and an epitaxial layer 200 is formed on the etch stop layer 301.
In this step, for example, MOCVD or MBE is used to form the etch stop layer 301 on the growth substrate 300, and the epitaxial layer 200 is formed on the etch stop layer 301 in this order. The epitaxial layer 200 includes an N-type semiconductor layer 23, a multiple quantum well layer (active layer) 22, and a P-type semiconductor layer 21 in this order from bottom to top. The N-type semiconductor layer 23 includes, in sequence from bottom to top, an N-type contact layer 234, an N-type current spreading layer 233, a quantum well absorption layer S0, an N-type confinement layer 232, and an N-side spacer layer 231, and the P-type semiconductor layer 21 includes, in sequence from bottom to top, a P-side spacer layer 214, a P-type confinement layer 213, a P-type current spreading layer 212, and a P-type contact layer 211.
The quantum well absorption layer S0 is formed between the N-type confinement layer 232 and the N-type current spreading layer 233, and in other embodiments, the quantum well absorption layer S0 may also be formed in the N-type current spreading layer 233.
The growth substrate 300 is, for example, a GaAs substrate, and the etch stop layer 301 and the epitaxial layer 200 may be of a single crystal or polycrystalline structure, including one or more of doped or undoped AlGaAs/AlInGaAs/InGaAs/AlGaAsP material systems, but not limited thereto.
The multiple quantum well layer 22 includes a quantum well structure composed of well layers and barrier layers alternately stacked, the material of the well layers of the multiple quantum well layer 22 may be InGaAs, and the material of the barrier layers of the multiple quantum well layer 22 may be GaAs, alGaAs, or AlGaAsP. In a specific embodiment, the well layer of the multiple quantum well layer 22 is InxGa1-xAs system material, wherein, x component is 5-20%; the barrier layer of the multiple quantum well layer 22 is AlyGa1-yAszP1-zThe system material, wherein the y component is 0 to 50 percent; the component z is 70-100%.
The material system of the multiple quantum well layer 22 is selected to realize the spectral emission of the peak wavelength of the multiple quantum well layer 22 in the near infrared band; and the In component x of the well layer of the multiple quantum well layer 22 is controlled to be 5-20%, and the multiple quantum well layer 22 and the substrate 100 have lower lattice mismatch due to the selection of the InGaAs material with low In component, so that the growth quality of the subsequent epitaxial layer 200 is ensured.
The quantum well absorption layer S0 is a periodic structure with at least one period, and the range of the period number is 1-30. The material of the well layer of the quantum well absorption layer S0 may be InGaAs, and the material of the barrier layer of the quantum well absorption layer S0 may be GaAs, alGaAs, or AlGaAsP. The materials of the quantum well absorption layer S0 and the multiple quantum well layer 22 may be the same or different. In this embodiment, the material of the quantum well absorption layer S0 is the same as the material of the multiple quantum well layer 22, but the composition and thickness are different, so that the peak wavelength of the quantum well absorption layer S0 is also in the near-infrared spectral emission and has a lower lattice mismatch with the substrate 100.
Specifically, the In composition of the material of the well layer of the quantum well absorption layer S0 is smaller than the In composition of the material of the well layer of the multiple quantum well layer 22; the thickness of the well layer of the quantum well absorption layer S0 is larger than the thickness of the well layer of the multiple quantum well layer 22.
In one preferred embodiment, the well layers of the multiple quantum well layer 22 are Inx1Ga1-x1As system material, x1 component is 5-20%; the barrier layer of the multiple quantum well layer 22 is Aly1Ga1-y1Asz1P1-z1The y1 component is 0-50%; the component z1 accounts for 70 to 100 percent; the well layer of the quantum well absorption layer S0 is Inx2Ga1-x2As system material, x2 component is 0-20%; the barrier layer of the quantum well absorption layer S0 is Aly2Ga1-y2Asz2P1-z2The y2 component is 0-50%; the component z2 accounts for 70-100%. The thickness of the well layer in the multiple quantum well layer 22 is t1, and the thickness of the well layer in the quantum well absorption layer S0 is t2. Wherein, x2<x1，t2>t1。
By setting the In component of the well layer material In the quantum well absorption layer S0 and the thickness of the well layer of the quantum well absorption layer S0, the transition radiation wavelength of the conduction band bottom and the valence band top of the quantum well absorption layer S0 is smaller than the radiation wavelength of the multiple quantum well layer 22, so that the light with the wavelength smaller than or equal to the transition wavelength is strongly absorbed, and the purpose of filtering is achieved. Wherein, the larger the number of cycles of the quantum well absorption layer S0 is, the stronger the ability to absorb light is.
In a specific embodiment, the peak emission wavelength of the mqw layer 22 is, for example, 940nm, and the transition emission wavelength (absorption peak wavelength) of the conduction band bottom and valence band top of the quantum well absorption layer S0 should be less than 940nm, preferably 910nm (completely invisible), that is, 30nm less than the peak emission wavelength of the mqw layer 22.
Because the refractive index of the semiconductor material is much larger than that of air, light emitted by the multiple quantum well layer 22 can be reflected for multiple times in the epitaxial layer 200, and light radiation of the multiple quantum well layer 22 is emitted after passing through the quantum well absorption layer S0 located on the light emitting side of the light emitting diode, so that most of the emitted light is filtered, and the filtering function is realized.
Further, based on the photoluminescence theory, photons with large energy (short waves) can excite photons with small energy (long waves), and the quantum well absorption layer S0 can form new carriers after absorbing radiation fractions with short wavelengths, thereby contributing to additional carrier fractions and improving the internal quantum efficiency of the light emitting diode to a certain extent.
Further, when the number of cycles of the quantum well absorption layer S0 is 2 or more, the In composition of the materials of the well layers In the quantum well absorption layer S0 may be the same or different. The thickness of the well layer in each period in the quantum well absorption layer S0 may be the same or different.
In a specific embodiment, the In compositions of the materials of the well layers In the quantum well absorption layer S0 are different from each other. The thickness of the well layer in each period of the quantum well absorption layer S0 is different. In this embodiment, the quantum well absorption layer S0 includes N periods of well layers and barrier layers.
Specifically, the first period of the quantum well absorber layer S0 includes: a first well layer and a first barrier layer; the second period includes: a second well layer and a second barrier layer; 8230; the Nth cycle includes: an Nth well layer and an Nth barrier layer.
The well layer structure comprises a first well layer, a second well layer, \ 8230, and an Nth well layer, wherein the material and the composition of the Nth well layer are respectively as follows:
Inx11Ga1-x11As，
Inx22Ga1-x22As，
…，
Inx2nGa1-x2nAs，
wherein x21, x22, \8230, x2n composition is 0-20%, composition x21< x22 \8230 < x2n, and x21, x22, \8230, x2n is less than In composition In each period In the MQW layer 22. In other embodiments, the composition x21> x22> \8230 ≧ x2n may be set, where x21, x22, \8230isonly required, and x2n is smaller than the In composition In each period In the mqw layer 22.
The first base layer, the second base layer, \ 8230, the Nth base layer is made of the following materials and components:
Aly21Ga1-y21Asz21P1-z21，
Aly22Ga1-y22Asz22P1-z22，
…，
Aly2nGa1-y2nAsz2nP1-z2n，
wherein, y21, y22, \ 8230, y2n components are all 0-50%; z21, z22, \ 8230, and z2n components are all 70-100%.
The quantum well absorption layer S0 has a well layer thickness of t21 in the first period, a well layer thickness of t22, \ 8230in the second period, and a well layer thickness of t2N in the Nth period. Wherein t21, t22, \ 8230;, < t2n are all larger than the well layer thickness of each period in the multiple quantum well layer 22, and t21< t22< \ 8230; < t2n. Further, t22= a × t21+ t21, t23= a × t21+ t22, i.e., t2n = t21+ a × (n-1) × t21; and a ranges from 0 to 0.3.
The first period, the second period, \ 8230, and the Nth period can be randomly arranged in the quantum well absorption layer S0.
The well layer of the quantum well absorption layer S0 is set to be of a structure with gradually changed components and thickness, so that the quantum well absorption layer S0 can absorb photons with different energies, absorption of different wavelengths is further achieved, and a better filtering effect is achieved.
Further, the doping type of the quantum well absorption layer S0 is N-type doping, for example, silicon (Si) or tellurium (Te) may be doped, so that carriers in the quantum well absorption layer S0 can smoothly transit to the multiple quantum well layer 22 to complete recombination.
Further, the barrier layer of the quantum well absorption layer S0 has the same Al composition and doping concentration as the N-type current spreading layer 233.
Further, the barrier layer of the quantum well absorption layer S0 has a thickness greater than 30nm and less than 200nm. If the thickness of the barrier layer of the quantum well absorption layer S0 is too thin, the smaller the In component In the InGaAs well layer is required, intrinsic absorption is easily generated. By arranging the barrier layer with larger thickness, the absorption of the quantum well absorption layer S0 on visible light is avoided.
As shown in fig. 2b, a first bonding metal layer S1-1 is formed on the epitaxial layer 200, and a second bonding metal layer S1-2 is additionally formed on the substrate 100. The substrate 100 is one of conductive substrates, and the substrate 100 is, for example, a Si substrate.
As shown in fig. 2c and 2d, the substrate 100 is bonded to the epitaxial layer 200 via a first bonding metal layer S1-1 and a second bonding metal layer S1-2.
In this step, the substrate 100 is bonded to the epitaxial layer 200, for example, by a bonding machine, wherein the first bonding metal layer S1-1 and the second bonding metal layer S1-2 are bonded to form a bonding metal layer S1, and the metal bonding layer S1 includes a mirror reflection structure and a current spreading structure. In other embodiments, it is also possible to form only the first bonding metal layer S1-1 on the epitaxial layer 200 or only the second bonding metal layer S1-2 on the substrate 100.
As shown in fig. 2e, the growth substrate 300 and the etch stop layer 301 are removed.
In this step, the growth substrate 300 and the etch stopper layer 301 are sequentially removed by, for example, wet etching; the surface of the N-type semiconductor layer 23 (specifically, the N-type contact layer 234) of the epitaxial layer 200 is exposed.
As shown in fig. 2f, a second electrode 400 is formed on the surface of the substrate 100 away from the metal bonding layer S1, and a first electrode 500 is formed on the N-type semiconductor layer 23 (N-type contact layer 234). The first electrode 500 is an N electrode, and the second electrode 400 is a P electrode.
According to the light emitting diode and the preparation method thereof disclosed by the embodiment of the invention, the quantum well absorption layer is additionally arranged in the N-type semiconductor layer of the light emitting diode, and the radiation light of the multiple quantum well layer is effectively absorbed through the epitaxial structure of the light emitting diode under the condition that an additional filtering device is not needed, so that filtering is realized, and the occurrence of a red storm phenomenon is inhibited.
Further, the quantum well absorption layer has a structure in which well layers and barrier layers are alternately stacked, and has stronger photon capture capability compared with a heterojunction structure or a single-layer structure.
Furthermore, by setting the In component In the well layer material of the quantum well absorption layer and the thickness of the well layer of the quantum well absorption layer, the transition radiation wavelength of the conduction band bottom and the valence band top of the quantum well absorption layer is smaller than the radiation wavelength of the multiple quantum well layer, so that the short wavelength share radiated by the multiple quantum well layer can be effectively absorbed, and on one hand, the short wavelength share In the light radiation of the multiple quantum well layer is filtered, and the red storm phenomenon is inhibited; on the other hand, the absorbed short-wavelength portion can form new carriers, so that additional carrier portions are contributed to the light-emitting diode, and the internal quantum efficiency of the light-emitting diode is improved to a certain extent.
Furthermore, the quantum well absorption layer is arranged on one side of the light emitting surface and is positioned in the current expansion layer far away from the spatial layer, or is positioned between the limiting layer and the current expansion layer far away, so that the influence on the recombination efficiency of the multiple quantum well layer is reduced.
Furthermore, the well layer of each period of the quantum well absorption layer is provided with a composition and a thickness gradually changing structure, so that the quantum well absorption layer can absorb photons with different energies, the absorption of light with different wavelengths is further realized, and a better filtering effect is achieved.
Furthermore, the doping type of the quantum well absorption layer is N-type doping, so that carriers in the quantum well absorption layer can smoothly transit to the multiple quantum well layer to complete recombination.
Further, the thickness of the barrier layer of the quantum well absorption layer is more than 30nm and less than 200nm. The barrier layer with larger thickness is arranged, so that the absorption of the quantum well absorption layer to visible light is avoided.
While embodiments in accordance with the invention have been described above, these embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments described. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention and various embodiments with various modifications as are suited to the particular use contemplated. The invention is limited only by the claims and their full scope and equivalents.

Claims (35)

1. A light emitting diode comprising:
a substrate;
a bonding metal layer on the substrate;
a P-type semiconductor layer on the bonding metal layer;
a multi-quantum well layer on the P-type semiconductor layer;
an N-type semiconductor layer on the multi-quantum well layer;
a first electrode connected to the N-type semiconductor layer; and
a second electrode connected to the P-type semiconductor layer;
the N-type semiconductor layer comprises a quantum well absorption layer, and the quantum well absorption layer is of a quantum well structure with at least one period and is used for absorbing partial share of radiated light of the multiple quantum well layer.
2. The light emitting diode of claim 1, wherein a transition radiation wavelength of the quantum well absorption layer is less than a radiation wavelength of the multiple quantum well layer.
3. The light-emitting diode according to claim 2, wherein a difference between a transition radiation wavelength of the quantum well absorption layer and a radiation wavelength of the multiple quantum well layer is not less than 30nm.
4. The light emitting diode of claim 1, wherein the N-type semiconductor layer comprises:
the N-side space layer is positioned on the multi-quantum well layer;
an N-type confinement layer located on the N-side spatial layer;
the N-type current spreading layer is positioned on the N-type limiting layer; and
and the N-type contact layer is positioned on the N-type current expansion layer.
5. A light emitting diode according to claim 4 wherein said quantum well absorption layer is located in said N-type current spreading layer or between said N-type current spreading layer and said N-type confinement layer.
6. The light emitting diode of claim 1, wherein the P-type semiconductor layer comprises:
the P-type contact layer is positioned on the metal bonding layer;
the P-type current expansion layer is positioned on the P-type contact layer;
the P-type limiting layer is positioned on the P-type current expansion layer; and
and the P-side spatial layer is positioned on the P-type limiting layer.
7. The light emitting diode according to claim 1 or 5, wherein materials of the well layer of the multiple quantum well layer and the well layer of the quantum well absorption layer include InGaAs, and materials of the barrier layer of the multiple quantum well layer and the barrier layer of the quantum well absorption layer include GaAs, alGaAs, or AlGaAsP.
8. A light emitting diode according to claim 1 or 5 wherein the material of the quantum well absorption layer is the same as or different from the material of the multiple quantum well layer.
9. A light emitting diode according to claim 1 or 5 wherein the material of the well layer of the quantum well absorption layer is InxGa1-xAs, x component is 0-20%; the barrier layer of the quantum well absorption layer is made of AlyGa1-yAszP1-zThe component y is 0-50% and the component z is 70-100%.
10. The light emitting diode of claim 9, wherein an In composition of material of well layers of the quantum well absorption layer is less than an In composition of material of well layers of the multiple quantum well layer.
11. The light emitting diode of claim 1, wherein the thickness of the well layers of the quantum well absorption layer is greater than the thickness of the well layers of the multiple quantum well layer.
12. The light emitting diode of claim 9, wherein, of the quantum well absorption layers having two or more periods, the well layers of the quantum well absorption layers In each period have the same or different In composition.
13. A light emitting diode according to claim 1 wherein in said quantum well absorption layer having two or more periods, said quantum well absorption layer in each period has the same or different thickness.
14. A light emitting diode according to claim 1 wherein said quantum well absorption layer is a doped superlattice structure and the doping type of said quantum well absorption layer is N-type.
15. The light emitting diode of claim 9, wherein the barrier layer of the quantum well absorption layer has the same Al composition and doping concentration as the N-type current spreading layer.
16. The light emitting diode of claim 1, wherein a thickness of the barrier layer of the quantum well absorber layer is greater than 30nm and less than 200nm.
17. The light emitting diode of claim 1, wherein the quantum well absorber layer has a periodicity of 1 to 30.
18. A method of making a light emitting diode, the method comprising:
sequentially forming an N-type semiconductor layer, a multi-quantum well layer and a P-type semiconductor layer on a growth substrate;
forming a bonding metal layer on the P-type semiconductor layer;
bonding the epitaxial layer on the growth substrate and the substrate together through the bonding metal layer;
removing the growth substrate to expose the N-type semiconductor layer;
forming a first electrode on one side of the N-type semiconductor layer; and
forming a second electrode on one side of the P-type semiconductor layer;
the N-type semiconductor layer comprises a quantum well absorption layer, and the quantum well absorption layer is provided with a quantum well structure with at least one period and is used for absorbing a part of radiation light of the multiple quantum well layer.
19. The method for manufacturing a light-emitting diode according to claim 18, wherein a transition radiation wavelength of the quantum well absorption layer is smaller than a radiation wavelength of the multiple quantum well layer.
20. The method for producing a light-emitting diode according to claim 19, wherein a difference between a transition radiation wavelength of the quantum well absorption layer and a radiation wavelength of the multiple quantum well layer is not less than 30nm.
21. The method for manufacturing a light emitting diode according to claim 18, wherein the method for forming the N-type semiconductor layer comprises: and sequentially forming an N-type contact layer, an N-type current expansion layer, an N-type limiting layer and an N-side space layer on the substrate.
22. The method of claim 21, wherein the quantum well absorption layer is formed in the N-type current spreading layer or between the N-type current spreading layer and the N-type confinement layer.
23. The method of manufacturing a light emitting diode according to claim 18, wherein the method of forming the P-type semiconductor layer comprises: and forming a P-side space layer, a P-type limiting layer, a P-type current expanding layer and a P-type contact layer on the multi-quantum well layer in sequence.
24. The manufacturing method of the light emitting diode according to claim 18 or 22, wherein the material of the well layer of the multiple quantum well layer and the well layer of the quantum well absorption layer comprises InGaAs, and the material of the barrier layer of the multiple quantum well layer and the barrier layer of the quantum well absorption layer comprises GaAs, alGaAs, or AlGaAsP.
25. The method for manufacturing a light-emitting diode according to claim 18 or 22, wherein a material of the quantum well absorption layer is the same as or different from a material of the multiple quantum well layer.
26. The production method of a light-emitting diode according to claim 18 or 22, wherein the material of the well layer of the quantum well absorption layer is InxGa1-xAs, x component is 0-20%; the barrier layer of the quantum well absorption layer is made of AlyGa1- yAszP1-zThe y component is 0-50%, and the z component is 70-100%.
27. The method of claim 26, wherein an In composition of a material of a well layer of the quantum well absorption layer is less than an In composition of a material of a well layer of the multiple quantum well layer.
28. The method of claim 18, wherein the thickness of the well layers of the quantum well absorption layer is greater than the thickness of the well layers of the multiple quantum well layer.
29. The method of manufacturing a light-emitting diode according to claim 26, wherein, of the quantum well absorption layers having two or more periods, the well layers of the quantum well absorption layers In each period have the same or different In composition.
30. The method of claim 18, wherein the quantum well absorption layer has two or more periods, and the quantum well absorption layer has the same or different thickness in each period.
31. The method of claim 18, wherein the quantum well absorption layer is a doped superlattice structure and the doping type of the quantum well absorption layer is N-type.
32. The method of claim 26, wherein the barrier layer of the quantum well absorption layer has the same Al composition and doping concentration as the N-type current spreading layer.
33. The method for manufacturing the light-emitting diode according to claim 18, wherein the thickness of the barrier layer in the quantum well absorption layer is greater than 30nm and less than 200nm.
34. The method of claim 18, wherein the quantum well absorption layer has a periodicity of 1 to 30.
35. The method for manufacturing a light-emitting diode according to claim 18, further comprising forming an etch stop layer on the growth substrate, the etch stop layer being located between the growth substrate and the N-type semiconductor layer;
and when the growth substrate is removed, the corrosion stop layer is removed at the same time.
CN202210868219.8A 2022-07-22 2022-07-22 Light emitting diode and preparation method thereof Pending CN115274949A (en)

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