CN115259655A - Large-size quartz glass and preparation method and system thereof - Google Patents
Large-size quartz glass and preparation method and system thereof Download PDFInfo
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- CN115259655A CN115259655A CN202210972740.6A CN202210972740A CN115259655A CN 115259655 A CN115259655 A CN 115259655A CN 202210972740 A CN202210972740 A CN 202210972740A CN 115259655 A CN115259655 A CN 115259655A
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 259
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 238000010438 heat treatment Methods 0.000 claims abstract description 108
- 238000005245 sintering Methods 0.000 claims abstract description 44
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 40
- 238000003825 pressing Methods 0.000 claims abstract description 39
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 39
- 238000005906 dihydroxylation reaction Methods 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims description 35
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 238000002791 soaking Methods 0.000 claims description 9
- 230000000994 depressogenic effect Effects 0.000 claims 5
- 230000003287 optical effect Effects 0.000 abstract description 29
- 125000002887 hydroxy group Chemical group [H]O* 0.000 abstract description 27
- 238000007669 thermal treatment Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 31
- 239000002184 metal Substances 0.000 description 24
- 238000000151 deposition Methods 0.000 description 21
- 239000012535 impurity Substances 0.000 description 20
- 230000008021 deposition Effects 0.000 description 19
- 239000007789 gas Substances 0.000 description 16
- 230000008569 process Effects 0.000 description 16
- 238000001125 extrusion Methods 0.000 description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 229910002804 graphite Inorganic materials 0.000 description 10
- 239000010439 graphite Substances 0.000 description 10
- 239000010453 quartz Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- 229910052736 halogen Inorganic materials 0.000 description 5
- 150000002367 halogens Chemical class 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 239000002210 silicon-based material Substances 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012774 insulation material Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000005025 nuclear technology Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010583 slow cooling Methods 0.000 description 2
- 238000004017 vitrification Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011491 glass wool Substances 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/06—Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction
- C03B19/066—Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction for the production of quartz or fused silica articles
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Glass Melting And Manufacturing (AREA)
Abstract
The invention provides large-size quartz glass and a preparation method and a system thereof, wherein the preparation method comprises the following steps: carrying out dehydroxylation treatment and sintering treatment on the silicon dioxide loose body to obtain a quartz glass blank; placing the quartz glass blank in a die cavity for first differential heat treatment and pressing the quartz glass blank in a first direction to obtain the quartz glass; wherein, the mould chamber is followed first direction includes in proper order that the mould chamber is followed first direction includes first temperature region and second temperature region in proper order, and quartz glass blank includes the second part that corresponds with the second temperature region, and at least with the first part that partly first temperature region corresponds in the first difference thermal treatment, second temperature region temperature is higher than the temperature in first temperature region, just the temperature in second temperature region is not less than 1600 ℃, can realize the preparation of jumbo size, low hydroxyl content, the good high-quality quartz glass of optical homogeneity.
Description
Technical Field
The invention belongs to the technical field of optical quartz glass manufacturing, and particularly relates to large-size quartz glass and a preparation method and a system thereof.
Background
The quartz glass is glass composed of a single component of silicon dioxide, and is widely applied to high and new technical fields such as aerospace, semiconductors, nuclear technology and the like. With the rapid development of aerospace, semiconductor and nuclear technologies, the requirements of various industries on the performance and quality of quartz glass are higher and higher. The process of producing the silica glass is an important factor affecting the properties and quality of the silica glass.
The method for preparing the quartz glass is divided into a direct method and an indirect method, wherein the direct method mainly uses natural quartz or silicon-containing compounds and the like as raw materials and prepares the quartz glass by a high-temperature melting method, an electric melting method, a Chemical Vapor Deposition (CVD) method and an ion chemical vapor deposition (POD) method. Due to the self-process limitation, the quality of the prepared quartz glass is poor, the contents of metal impurities and hydroxyl groups are high, and more bubbles exist in the glass, so that the optical performance of the quartz glass is seriously influenced, and the requirements in the field of photoelectric technology cannot be met.
The indirect method mainly uses silicon-containing compounds as raw materials, prepares a silicon dioxide powder body by a vapor deposition method (VAD), then carries out dehydroxylation purification treatment on the silicon dioxide powder body, and finally sinters the silicon dioxide powder body into quartz glass by high temperature. The metal impurity content and the hydroxyl content in the quartz glass can be controlled at a lower level by carrying out dehydroxylation purification treatment on the powder intermediate, but the size of the powder intermediate is limited, the diameter of the quartz glass prepared by an indirect method is 100 mm-200 mm, and the quartz glass with larger size is difficult to prepare.
Therefore, how to realize the preparation of high-quality quartz glass with large size, low hydroxyl content and good optical uniformity is a technical problem to be solved in the field.
Disclosure of Invention
The invention provides large-size quartz glass and a preparation method and a preparation system thereof, which can prepare the quartz glass with large size, low hydroxyl and good optical uniformity.
In one aspect of the present invention, a method for producing a silica glass is provided, comprising the steps of: carrying out dehydroxylation treatment and sintering treatment on the silicon dioxide loose body to obtain a quartz glass blank; placing the quartz glass blank in a die cavity for first differential heat treatment and pressing the quartz glass blank in a first direction to obtain quartz glass; the mold cavity comprises a first temperature area and a second temperature area along a first direction in sequence, and the quartz glass blank comprises a second part corresponding to the second temperature area and a first part corresponding to at least part of the first temperature area; in the first differential heat treatment, the temperature of the second temperature area is higher than that of the first temperature area, and the temperature of the second temperature area is not less than 1600 ℃; during the pressure application treatment, the deformation speed of the quartz glass blank is not higher than 10mm/min; the mold cavity is provided with a bottom wall for receiving quartz glass, and the bottom wall is provided with a recess.
According to an embodiment of the present invention, before the first differential heat treatment, the method further comprises performing a first soaking treatment on the quartz glass blank; in the first soaking treatment, the temperature T1 of the first temperature area is equal to the temperature T2 of the second temperature area, the temperature T1 is more than or equal to 1300 ℃, the temperature T2 is less than 1600 ℃, and the time is not less than 60min.
According to an embodiment of the present invention, in the first differential heat treatment, the temperature of the first temperature zone is T1 and the temperature of the second temperature zone is T2, wherein 1300 ℃ T1 ≦ 1600 ℃ and 1600 ℃ T2 ≦ 1800 ℃.
According to an embodiment of the invention, after the pressing treatment, a second soaking difference heat treatment is further included; the temperature of the second soaking differential heat treatment is increased by 20-50 ℃ compared with the temperature of the second temperature area in the first differential heat treatment, and the time is not less than 10min.
According to an embodiment of the present invention, the heating rate of each heat treatment is 3 ℃/min to 8 ℃/min.
According to one embodiment of the invention, the deformation rate of the quartz glass blank is 3mm/min to 10mm/min during the pressing.
According to an embodiment of the invention, the mould cavity has a bottom wall for receiving the quartz glass, the bottom wall comprising a centrally located depression and a planar portion surrounding the depression, the depression being recessed in a direction away from the centre of the mould cavity.
In a second aspect of the present invention, there is provided a silica glass produced by the above production method.
In a third aspect of the present invention, there is provided a system for producing silica glass for carrying out the above production method, the system comprising at least: the sintering furnace is used for carrying out dehydroxylation treatment and sintering treatment on the silicon dioxide loose body; the groove sinking furnace comprises a furnace shell, a mold with a mold cavity, a pressing unit, a first heating unit and a second heating unit; the mould cavity is positioned in a heating cavity formed by surrounding the furnace shell, and the first heating unit and the second heating unit are positioned between the furnace shell and the mould and are sequentially arranged according to a first direction; the pressing unit is arranged in the die cavity and reciprocates along the first direction in the die cavity.
According to an embodiment of the invention, the mould cavity has a bottom wall for receiving the quartz glass, the bottom wall comprising a centrally located depression and a planar portion surrounding the depression, the depression being recessed in a direction away from the centre of the mould cavity.
The implementation of the invention has at least the following beneficial effects:
according to the invention, the silicon dioxide loose body is subjected to dehydroxylation treatment, so that residual metal impurities and hydroxyl in the silicon dioxide loose body can be fully removed, and then sintering treatment is carried out, so that the silicon dioxide loose body is subjected to preliminary vitrification to obtain quartz glass blank; according to the invention, the quartz glass blank is placed in the die cavity, and the quartz glass blank is pressed along the first direction, so that large-size quartz glass with the shape consistent with that of the die cavity can be obtained; meanwhile, the quartz glass blank is subjected to first differential heat treatment, so that the quartz glass blank is gradually softened and formed, stripes and bubbles are prevented from being generated in the extrusion process, and the optical uniformity of the quartz glass can be effectively improved.
The optical uniformity of the quartz glass prepared by the preparation method can reach 12 multiplied by 10 -6 The metal impurity content is below 1ppm, the hydroxyl content is below 1ppm, the diameter of the quartz glass can reach 300-400 mm, the thickness can reach 300-400 mm, and the quartz glass has the advantages of large size, low hydroxyl content, good optical uniformity and the like.
Drawings
FIG. 1 is a schematic structural sectional view of a tank furnace according to an embodiment of the present invention;
FIG. 2 is a schematic structural view of a deposition apparatus according to an embodiment of the present invention;
description of the reference numerals:
1-furnace shell; 2-a cylinder; 3, pressing a plate; 3 a-platen die; 4-quartz glass wool blanks; 5-molding; 5 a-a bottom wall; 51 a-a recess; 52 a-planar section; 6 a-a first heating unit; 6 b-a second heating unit; 7-insulating board; 8-a mould cavity; 101-quartz tail handle; 102-a metal boom; 103-silica loose bodies; 11-a furnace housing; 11 a-a deposition chamber; 12-an extension housing; 12 a-an extension cavity; 14-deposition burner; 15-a PLC system; 16-infrared thermal imager; 17-an exhaust system.
Detailed Description
The following detailed description is merely illustrative of the principles and features of the present invention, and the examples are intended to be illustrative of the invention and not limiting of the scope of the invention. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments of the present invention without any creative effort belong to the protection scope of the present invention.
The invention provides a preparation method of large-size quartz glass, which comprises the following steps: carrying out dehydroxylation treatment and sintering treatment on the silicon dioxide loose body to obtain a quartz glass blank; placing the quartz glass blank in a die cavity for first differential heat treatment and pressing the quartz glass blank in a first direction to obtain quartz glass; the mold cavity sequentially comprises a first temperature area and a second temperature area along a first direction, and the quartz glass blank comprises a second part corresponding to the second temperature area and a first part corresponding to at least part of the first temperature area; in the first differential heat treatment, the temperature of the second temperature region is higher than that of the first temperature region, and the temperature of the second temperature region is not less than 1600 ℃.
The present invention is not limited to the first direction, and for example, the first direction may be a height extension direction of the mold cavity, and the mold cavity may be divided into a first temperature region and a second temperature region along the first direction, wherein the second temperature region is closer to the first direction than the first temperature region.
When the quartz glass blank is placed in the mold cavity, the height of the mold cavity can be greater than or equal to the height of the blank, so that the blank is ensured to have a part corresponding to the mold cavity. In the first direction, the blank comprises a second portion corresponding to the second temperature zone, and at least a first portion corresponding to part of the first temperature zone, the second temperature zone being capable of heat treating the second portion and the first temperature zone being capable of heat treating the first portion.
It should be noted that the first part and the second part of the quartz glass blank according to the present invention refer to the blank before the pressing process.
Specifically, according to the method, a silicon dioxide loose body is used as an initial raw material to be subjected to dehydroxylation treatment and sintering treatment to obtain the quartz glass blank, and the quartz glass blank is placed in a die cavity to be subjected to first differential heat treatment and pressure application treatment to finally obtain the quartz glass.
According to the invention, the silicon dioxide loose body is used as a raw material, hydroxyl and metal impurities in the loose body can be removed through dehydroxylation treatment, and after the dehydroxylation treatment is completed, the silicon dioxide loose body is vitrified to form a quartz glass blank.
The first differential heat treatment means that the quartz glass blank is placed in a die cavity, and the blank is heated in a subarea mode by enabling the temperature of a second temperature area of the die cavity to be higher than that of a first temperature area. Because the temperature of the second temperature area is not less than 1600 ℃ in the first differential heat treatment, the second part of the blank is softened firstly, and the temperature of the first temperature area of the die cavity is relatively lower, so that the first part of the blank corresponding to the first temperature area can be kept in a relatively stable state.
Meanwhile, the blank material is pressed along the first direction, so that the first softened part of the blank material is formed under the action of pressing, the height of the blank material along the first direction is gradually reduced in the pressing process, the rest blank material is gradually moved to a second temperature area of the die cavity, the blank material is gradually softened under the condition of relatively higher temperature, and the strip and the bubbles can be prevented from being generated in the extruding process in the gradual softening and forming process through pressing and forming.
Therefore, according to the invention, the silicon dioxide loose body is subjected to dehydroxylation treatment and sintering treatment to obtain the quartz glass blank with low hydroxyl content and metal content, then the quartz glass blank is placed in the die cavity, the first differential heat treatment is carried out on the quartz glass blank, and the pressure treatment is carried out on the quartz glass blank along the first direction, so that the quartz glass blank can be ensured to be gradually softened and formed, the generation of stripes and bubbles in the extrusion process is avoided, the optical uniformity of the quartz glass is effectively improved, and in addition, the large-size quartz glass with the shape consistent with the die cavity can be obtained.
The silica loose body of the present invention is formed by aggregation of nano silica particles, and the method for preparing the silica loose body is not limited in the present invention, and in a possible embodiment, the silica loose body is prepared by chemical vapor deposition using a silicon-containing compound as a raw material. The silica bulk is generally cylindrical, and may be cylindrical with a bottom surface having a diameter of 240mm to 400mm and a height of 1.2m to 2m, for example.
The dehydroxylation treatment is usually carried out by adopting a conventional method in the field, for example, dehydroxylation gas containing halogen elements can be used for dehydroxylating the silica loose body, so that the hydroxyl content and the metal impurity content in the quartz glass blank at the later stage can be effectively reduced, the negative influence of impurities such as hydroxyl, metal and the like on the optical performance of the quartz glass can be effectively reduced on the premise of continuing the advantages of the silica loose body prepared by chemical vapor deposition, and the optical uniformity of the quartz glass is improved.
The dehydroxylation gas containing a halogen element includes a gas containing a halogen element, such as fluorine gas, chlorine gas, bromine vapor, and sulfur oxychloride. An inert gas such as helium may be used as a shielding gas for the dehydroxylation gas.
In the present invention, the sintering treatment may be performed by a conventional method, and may include, for example, the following steps: heating the silicon dioxide loose body subjected to dehydroxylation treatment to a sintering temperature, sintering the silicon dioxide loose body, and cooling after the sintering treatment to obtain the quartz glass blank.
In the sintering treatment, a certain heating rate can be kept in the heating process, so that the silicon dioxide loose body is fully and uniformly heated and then slowly finishes the vitrification process, thereby ensuring that the prepared quartz glass has good optical uniformity. After the silicon dioxide loose body is sintered, the temperature is reduced at a certain cooling rate, and the slow cooling is helpful for improving the internal stress defect of the quartz glass to prepare the low-stress quartz glass. The internal stress of the quartz glass can be effectively reduced through the combination of slow high-temperature sintering and slow cooling, and the uniformity of the quartz glass is further improved.
The dehydroxylation treatment and the sintering treatment can be completed in one sintering furnace, so that the possible pollution in the material transfer process is avoided, the impurity content in the quartz glass is reduced, and the uniformity of the quartz glass is improved. In the dehydroxylation treatment and sintering treatment of the silicon dioxide loose body, the temperature can be continuously increased or kept constant, so that the resource waste caused by repeated temperature rise and temperature reduction is reduced, the production cost can be reduced, and the preparation process is green and environment-friendly.
Typical dehydroxylation conditions are: the temperature is 1210-1290 ℃, and the time is not less than 10h; the temperature of the sintering treatment is higher than that of the dehydroxylation treatment, and the conditions of the sintering treatment are generally as follows: the temperature is 1450-1600 ℃, and the time of sintering treatment is not less than 10h.
In the invention, before the quartz glass blank is placed in the die cavity for the first differential heat treatment, the quartz glass blank is subjected to soaking treatment.
In the soaking treatment, the temperature T1 of the first temperature area is equal to the temperature T2 of the second temperature area, the temperature T1 is more than or equal to 1300 ℃, the temperature T2 is less than 1600 ℃, so that the blank material is in a molten critical state, the time for keeping the temperature is not less than 60min, the blank material is fully heated, and the temperature of the inner part and the outer part of the blank material is kept consistent.
In the invention, in the first differential heat treatment, the temperature of the first temperature zone is T1, wherein T1 is more than or equal to 1300 ℃ and less than 1600 ℃, and the temperature of the second temperature zone is T2, wherein T2 is more than or equal to 1600 ℃ and less than or equal to 1800 ℃. The heat treatment temperature is usually maintained for at least 10min, and after the second part of the blank is completely melted, the quartz glass blank is pressed to form.
In the specific implementation process of the invention, the quartz glass blank is placed in a vertical mold cavity, as shown in fig. 1, the height direction of the quartz glass blank is consistent with the height direction of the mold cavity, the first direction can be a direction from a to B, and the height direction of the blank is parallel to the first direction. The mold cavity includes a first portion and a second portion in order along a direction from a to B.
In the above embodiment, the blank is pressed in the direction from a to B. And in the pressure application treatment, the deformation speed of the quartz glass blank is 3 mm/min-10 mm/min, namely the quartz glass blank is applied with pressure along the direction from A to B, so that the height reduction rate of the quartz glass blank is 3 mm/min-10 mm/min. As shown in fig. 1, the mold cavity 8 may be cylindrical, and by applying an external force to the quartz glass blank 4 in the first direction, it is possible to obtain a large-sized quartz glass conforming to the shape of the mold cavity.
The mould cavity 8 has a bottom wall 5a for receiving quartz glass. The bottom wall 5a includes a recessed portion 51a at the center and a flat portion 52a provided around the recessed portion 51a, and the recessed portion 51a is recessed in a direction away from the center of the mold cavity 8.
Specifically, the recessed portion 51a may be in the shape of a circular arc, or may be stepped, preferably circular arc, which is advantageous for molding of the silica glass.
The quartz glass blank 4 is fixed in the mold cavity 8, and the first direction may be directed to the recess 51a. Meanwhile, the bottom surface of the quartz glass blank 4 is arranged opposite to the concave part 51a, so that the blank 4 is firstly formed in the concave part 51a in the pressing process, and then is gradually formed and extended to the plane part 52a on the basis of the concave part 51a to reach the target outer diameter. By forming the blank material in the concave part and then gradually extending the blank material to the plane part for forming, the process can avoid the generation of stripes and bubbles caused by irregular extrusion to influence the uniformity of the quartz glass.
In the invention, the pressing treatment can be extrusion molding of the quartz glass blank material according to a constant extrusion tension, or can be sectional extrusion molding of the quartz glass blank material.
In the specific implementation process of the invention, the height reduction rate of the quartz glass blank 4 can be firstly controlled to be 3 mm/min-5 mm/min, and after the blank 4 completely fills the concave part 51a, the constant pressure is adjusted to apply pressure, so that the height reduction rate of the quartz glass blank 4 is kept at 5 mm/min-10 mm/min. Wherein the extrusion tension can be-5N to-2N, wherein the negative sign represents the direction, and the tension is negative during extrusion.
After the pressure application treatment, the second differential heat treatment is carried out on the blank material after the pressure application forming, wherein the temperature of the second differential heat treatment is increased by 20-50 ℃ compared with the temperature of a second temperature area in the first differential heat treatment, and the time is not less than 10min. The formed blank is kept under the pressure and the temperature of the second differential heat treatment, so that residual micro bubbles in the blank can be effectively removed, and the optical uniformity of quartz glass is facilitated.
Generally, the height of the pressed and formed blank is not higher than the height of the second temperature area, so in the specific implementation process of the invention, in the second differential heat treatment, the temperature of the first temperature area can be not equal to the temperature of the second temperature area, and only the temperature of the second temperature area in the second differential heat treatment is increased by 20-50 ℃ on the basis of the first differential heat treatment. The temperature of the first temperature region may be maintained constant on the basis of the first differential heat treatment.
In the invention, the heating rate of each heat treatment is 3-8 ℃/min. The temperature of the soaking treatment, the first differential heat treatment and the second differential heat treatment can be reached by slowly raising the temperature, the temperature raising rate of each heat treatment is independently selected from 3 ℃/min to 8 ℃/min, the blank can be uniformly heated by slowly raising the temperature, and the uniformity of the quartz glass is improved.
In the invention, after dehydroxylation treatment and sintering treatment, the prepared blank material is subjected to differential heat treatment, pressure application and other treatment, so that the blank material can be molded, the internal structure of the blank can be remolded, and the optical uniformity of the quartz glass can be improved.
The invention also provides quartz glass which is prepared by the preparation method and has the characteristics of large size, high uniformity and low hydroxyl, and the optical uniformity can reach 12 multiplied by 10 -6 The following further can be 8X 10 -6 The following is still further up to 5X 10 -6 The following; the content of metal impurities can reach below 1ppm, the content of hydroxyl can reach below 1ppm, the diameter of the quartz glass can reach 300 mm-400 mm, and the thickness can reach 300 mm-400 mm.
In the invention, the silicon dioxide loose body is prepared by chemical vapor deposition. The chemical vapor deposition process may be performed in a deposition apparatus, as shown in fig. 2, which includes a furnace housing 11, a deposition chamber 11a formed by being surrounded by the furnace housing 11, an extension housing 12, an extension chamber 12a formed by being surrounded by the extension housing 12, a deposition torch 14, an infrared thermal imager 16, a PLC control system 15, and an exhaust system 17.
The deposition chamber 11a communicates with the extension chamber 12a, and the diameter of the extension chamber 12a is smaller than that of the deposition chamber 11 a. A metal suspender 102 is arranged above the extension cavity 12a, and a quartz tail handle 101 is arranged on the metal suspender 102. When the silicon dioxide loose body is continuously deposited in the cavity, the upper suspension rod moves upwards slowly in the deposition process, and the deposited silicon dioxide loose body is gradually moved to the extension cavity.
And a deposition burner 14 disposed on the furnace housing 11 for introducing hydrogen and oxygen gases and a silicon-containing compound raw material into the deposition chamber 11 a. In the deposition process, silicon-containing compound raw materials enter from the lower part of a deposition burner 14, silicon dioxide powder is sprayed out from a burner above after reaction in the burner, and the silicon dioxide powder is gradually attached to a quartz tail handle 101 in a cavity, wherein the quartz tail handle 101 is kept rotating at a certain speed through a metal suspender 102 and is gradually deposited to form a silicon dioxide loose body 103.
The infrared thermal imager 16 can analyze and monitor the heat distribution in the deposition chamber 11a in real time during the deposition process, and feed the heat distribution back to the PLC system 15.
And the exhaust system 17 is arranged on the furnace shell 11 and can automatically control the exhaust in the deposition cavity 11a according to the feedback signal of the infrared thermal imager 16. The exhaust system 17 is composed of a series of automatic exhaust devices and exhaust outlets in different shapes.
A Programmable Logic Controller (PLC) system 15 that can automatically collect information and control according to a programmed program. Wherein the infrared thermal imaging camera 16, the exhaust system 17 and the deposition blowtorch 14 are connected to the PLC system 15 through signal lines.
The PLC system 15 can control the heat increasing end in the deposition chamber 11a by adjusting the flow rate of the deposition burner 14, and can control the heat decreasing end of the deposition chamber 11a by adjusting the air exhaust position, air exhaust speed, air exhaust amount, and other parameters of the air exhaust system 17, so that the heat in the deposition chamber 11a can be uniformly distributed, the air flow in the deposition chamber 11a can be stably circulated, and a stable dynamic balance system is formed in the deposition chamber 11a, thereby being beneficial to depositing the silica loose body 13 with high uniformity.
The invention also provides a quartz glass preparation system, which is used for implementing the preparation method and at least comprises the following components: the sintering furnace is used for carrying out dehydroxylation treatment and sintering treatment on the silicon dioxide loose body; as shown in fig. 1, the slot-sinking furnace includes a furnace shell 1, a mold 5 having a mold cavity 8, a pressing unit, a first heating unit 6a, and a second heating unit 6b; the mould cavity 8 is positioned in a heating cavity formed by surrounding the furnace shell 1, and the first heating unit 6a and the second heating unit 6b are positioned between the furnace shell 1 and the mould 5 and are sequentially arranged according to a first direction; the pressing unit is disposed in the mold cavity and reciprocates in the mold cavity 8 in a first direction.
The sintering furnace may be conventional equipment in the art, such as a vertical sintering furnace. The vertical sintering furnace comprises a furnace body, a graphite furnace core pipe, a quartz furnace core pipe, a heating unit, an air inlet and an air outlet.
The graphite furnace core pipe wraps the quartz furnace core pipe, the furnace body wraps the graphite furnace core pipe, and the heating unit is arranged between the furnace body and the graphite furnace core pipe. The loose silicon dioxide body is arranged in the quartz furnace core tube, so that the loose silicon dioxide body is not polluted by metal impurities.
The gas inlet and the gas outlet are communicated with the quartz furnace core pipe, the gas inlet can be used for introducing dehydroxylation gas and protective gas, and the gas outlet is used for discharging waste gas.
In the tank furnace, the first heating unit 6a and the second heating unit 6b are sequentially arranged in the first direction, and the temperatures can be independently controlled. The first heating unit 6a and the second heating unit 6b correspond to the first temperature area and the second temperature area of the mold cavity, respectively, and specifically, the first heating unit 6a may be used to control the temperature of the first temperature area, and the second heating unit 6b may be used to control the temperature of the second temperature area.
The first heating unit 6a and the second heating unit 6b may be graphite heating bodies made of graphite materials. Insulation boards 7, such as graphite insulation materials, can also be arranged between the first heating unit 6a and the second heating unit 6b and the furnace shell 1.
As shown in fig. 1, the first direction is a direction from a to B.
The pressing unit may include a cylinder 2 and a platen 3, and the cylinder 2 may control the platen 3 to reciprocate in a first direction within the mold cavity 8. The cylinder 2 is also provided with a sensor which can automatically control the descending speed of the cylinder according to the set extrusion tension, so that the quartz glass blank 4 can slowly deform at a constant speed in the whole pressure application process until extrusion molding, and the descending speed of the cylinder is generally equal to the deformation speed of the quartz glass blank 4. And a pressing plate die 3a is arranged on one side of the pressing plate 3 close to the die cavity and used for fixing the quartz glass blank 4 in the die cavity.
The mold 5 with the mold cavity 8 is mainly composed of a U-shaped graphite mold and a bottom wall 5a for receiving quartz glass. The bottom wall 5a includes a recessed portion 51a at the center and a flat portion 52a provided around the recessed portion 51a, and the recessed portion 51a is recessed in a direction away from the center of the mold cavity 8. The bottom surface of the blank 4 is opposed to the recessed portion 51a, and the quartz glass blank 4 can be fixed in the mold cavity 8 by the bottom wall 5a in cooperation with the platen mold 3a on the platen 3. Wherein the bottom wall 5a may be a graphite bottom plate.
In the invention, the preparation method of the quartz glass is implemented by adopting the preparation system of the quartz glass, and the specific process steps are as follows:
firstly, placing a silicon dioxide loose body into a sintering furnace, introducing inert gas into the sintering furnace, heating the sintering furnace to the dehydroxylation temperature, and preheating; then, introducing dehydroxylation gas containing halogen elements into the sintering furnace for dehydroxylation treatment; after the dehydroxylation treatment is finished, firstly stopping introducing dehydroxylation gas containing halogen elements into the sintering furnace, and continuously introducing inert gas into the sintering furnace to remove redundant dehydroxylation gas; continuously heating the sintering furnace to the sintering treatment temperature, carrying out sintering treatment, and finally cooling the sintering furnace after the sintering treatment is finished to obtain quartz glass blank;
secondly, placing the quartz glass blank material into a die cavity of a tank furnace, and fixing the quartz glass blank material into the die cavity through a bottom wall matched with a pressing plate die on a pressing plate; starting the first heating unit and the second heating unit to enable the temperature T1 of the first temperature area to be equal to the temperature T2 of the second temperature area, wherein the temperature T1 is more than or equal to 1300 ℃, the temperature T2 is less than 1600 ℃, and the temperature is kept for at least 60min;
step three, keeping the temperature of the first heating unit unchanged, heating the second heating unit to ensure that the temperature T2 of a second temperature area is more than or equal to 1600 ℃ and less than or equal to 1800 ℃ and is kept for at least 10min, pressing the blank material by the air cylinder along the first direction at a descending speed of 3 mm/min-5 mm/min, and after the blank material completely fills the concave part of the bottom wall, pressing the air cylinder at a constant extrusion tension of-5N to-2N, wherein the descending speed of the air cylinder is generally 5 mm/min-10 mm/min;
and step four, after the blank material is molded, the air cylinder descends to the bottom, and then the second heating unit is heated, so that the temperature of the second temperature area is increased by 20-50 ℃ on the basis of the step three, and the temperature is kept for at least 10min, and the quartz glass is obtained.
The quartz glass preparation system provided by the invention is convenient and quick to use, and can be used for preparing quartz glass with large size, high optical uniformity and low hydroxyl content. The system can avoid the generation of stripes and bubbles after the quartz glass blank material is softened, so that the uniformity of the quartz glass is poor. In the soaking treatment, the first differential heat treatment and the second differential heat treatment of the quartz glass blank, the temperature can be continuously increased or kept constant, so that the resource waste caused by repeated temperature increase and reduction is reduced, the production cost can be reduced, and the preparation process is green and environment-friendly.
The present invention will be further illustrated by the following specific examples and comparative examples.
In the following examples 1 to 5 and comparative examples 1 to 2, the metal impurity content, hydroxyl group content, and optical uniformity in the silica glass were measured as follows:
the content detection of the metal impurities is carried out by using an inductively coupled plasma emission mass spectrometer (ICP-MS) according to the detection standard of GB/T3284-2015 quartz glass chemical composition analysis.
The hydroxyl content is detected by an infrared spectrometer according to the detection standard of GB/T12442-90 determination of hydroxyl content in quartz glass.
And (3) detecting the optical uniformity delta n of the quartz glass by using a laser interferometer according to the detection standard of an optical uniformity Fizeau planar interference method in appendix A of JC/T185-2013 optical quartz glass.
In the following embodiments, a slot-sinking furnace is used as shown in fig. 1, and includes a furnace shell 1, a mold 5 having a mold cavity 8, a pressing unit, a first heating unit 6a, and a second heating unit 6b;
the mould 5 is provided with a mould cavity 8, the mould 5 is positioned in a heating cavity formed by enclosing the furnace shell 1 and mainly comprises a U-shaped graphite mould and a bottom wall 5a for receiving quartz glass, the bottom wall 5a comprises a concave part 51a positioned in the center and a plane part 52a annularly arranged at the periphery of the concave part 51a, and the concave part 51a is concave towards the direction far away from the center of the mould cavity 8;
the pressing unit is arranged in the die cavity and comprises an air cylinder 2 and a pressing plate 3, and the air cylinder 2 controls the pressing plate 3 to reciprocate in the die cavity 8 along a first direction; a pressing plate die 3a is arranged on one side of the pressing plate 3 close to the die cavity and used for fixing the quartz glass blank 4 in the die cavity;
the first heating unit 6a and the second heating unit 6B are positioned between the furnace shell 1 and the mold 5 and are arranged in sequence according to a first direction (from A to B); the first heating unit 6a and the second heating unit 6b correspond to the first temperature area and the second temperature area of the mold cavity one by one, respectively; graphite heat insulation materials 7 are arranged between the first heating unit 6a and the furnace shell 1 and between the second heating unit 6b and the furnace shell 1;
in the embodiment of the present invention, the bottom surface of the blank 4 is disposed opposite to the recessed portion 51a, and the quartz glass blank 4 can be fixed in the mold cavity 8 by the bottom wall 5a engaging with the platen mold 3a on the platen 3.
Example 1
(1) Preparing a silicon dioxide loose body with the diameter of 320mm and the height (length) of 1.6m by a chemical deposition method, putting the silicon dioxide loose body in a sintering furnace, and performing dehydroxylation treatment and sintering treatment to obtain a quartz glass blank with the diameter of 200mm and the height of 1.2 m;
(2) Placing the quartz glass blank in a die cavity of a tank furnace, and fixing the quartz glass blank in the die cavity by matching a bottom wall with a pressing plate die on a pressing plate; starting the first heating unit and the second heating unit, so that the temperature of the first temperature area and the temperature of the second temperature area are increased to 1400 ℃ at the speed of 5 ℃/min, and the temperature is kept for 60min;
(3) Keeping the temperature of the first heating unit unchanged, continuously heating the second heating unit to enable the temperature of the second temperature area to rise to 1700 ℃ at the speed of 3 ℃/min, after keeping the temperature for 10min, starting to descend the air cylinder, extruding the blank material along the first direction, wherein the descending speed of the air cylinder is 3-5 mm/min, after the blank material completely fills the concave part of the bottom wall, pressing the air cylinder at a constant extrusion tension of-5N to enable the descending speed of the air cylinder to be 8-10 mm/min;
(4) And after the blank material is formed, the cylinder is lowered to the bottom, the second heating unit is heated, the temperature of the second temperature area is raised to 1720 ℃, and the temperature is kept for 10min, so that the quartz glass is obtained.
The quartz glass obtained in example 1, having a diameter of 360mm and a thickness of 300mm, was found to have a metal impurity content of less than 1ppm, a hydroxyl group content of less than 1ppm and an optical uniformity of 8X 10 -6 。
Example 2
In comparison with example 1, the "60 min at this temperature" in step (2) was replaced by "10 min at this temperature", and the other conditions were not changed.
The quartz glass obtained in example 2, having a diameter of 360mm and a thickness of 300mm, was found to have a metal impurity content of less than 1ppm, a hydroxyl group content of 2.1ppm and an optical uniformity of 12X 10 -6 。
Example 3
Compared with the embodiment 1, the step (4) is replaced by 'obtaining quartz glass after the cylinder is lowered to the bottom blank material for forming', and other conditions are not changed.
The quartz glass produced in example 3, having a diameter of 360mm and a thickness of 300mm, was found to have a metal impurity content of less than 1ppm, a hydroxyl group content of less than 1ppm and an optical uniformity of 9X 10 -6 。
Example 4
In comparison with example 1, the step (3) "to raise the temperature of the second temperature region to 1700 ℃ at a rate of 3 ℃/min" was replaced with the step (3) "to raise the temperature of the second temperature region to 1700 ℃ at a rate of 10 ℃/min", and the other conditions were not changed.
The quartz glass obtained in example 4, having a diameter of 360mm and a thickness of 300mm, was found to have a metal impurity content of less than 1ppm, a hydroxyl group content of less than 1ppm and an optical uniformity of 11X 10 -6 。
Example 5
(1) Preparing a silicon dioxide loose body with the diameter of 400mm and the height (length) of 1.8m by a chemical deposition method, putting the silicon dioxide loose body into a sintering furnace, and performing dehydroxylation treatment and sintering treatment to obtain a quartz glass blank with the diameter of 240mm and the height of 1.4 m;
(2) Placing the quartz glass blank in a die cavity of a tank furnace, and fixing the quartz glass blank in the die cavity by matching a bottom wall with a pressing plate die on a pressing plate; starting the first heating unit and the second heating unit, so that the temperature of the first temperature area and the temperature of the second temperature area are increased to 1400 ℃ at the speed of 5 ℃/min, and the temperature is kept for 60min;
(3) Keeping the temperature of the first heating unit unchanged, continuously heating the second heating unit to enable the temperature of the second temperature area to rise to 1700 ℃ at the speed of 3 ℃/min, after keeping the temperature for 10min, enabling the air cylinder to descend, extruding the blank material along the first direction to enable the descending speed of the air cylinder to be 3-5 mm/min, after the blank material completely fills the concave part of the bottom wall, enabling the air cylinder to apply pressure at a constant extrusion tension of-2N to enable the descending speed of the air cylinder to be 5-7 mm/min;
(4) And after the blank material is molded, the air cylinder descends to the bottom, the second heating unit is heated, the temperature of the second temperature area is increased to 1720 ℃, and the temperature is kept for 10min, so that the quartz glass is obtained.
The quartz glass obtained in example 5, having a diameter of 400mm and a thickness of 400mm, was found to have a metal impurity content of less than 1ppm, a hydroxyl group content of less than 1ppm and an optical uniformity of 5X 10 -6 。
Comparative example 1
Compared with the embodiment 1, the 'cylinder descending speed is 8-10 mm/min' in the step (3) is replaced by 'the cylinder descending speed is 11-13 mm/min', and other conditions are not changed.
The quartz glass produced in comparative example 1, having a diameter of 360mm and a thickness of 300mm, was found to have a metal impurity content of less than 1ppm, a hydroxyl group content of less than 1ppm and an optical uniformity of 21X 10 -6 。
Comparative example 2
Compared with the embodiment 1, the step (3) is replaced by that the first heating unit and the second heating unit continue to heat up, so that the temperature in the tank furnace is increased to 1700 ℃ at the speed of 3 ℃/min, the cylinder starts to descend after the temperature is kept for 10min, the blank material is extruded along the first direction, wherein the descending speed of the cylinder is 3-5 mm/min, after the blank material completely fills the concave part of the bottom wall, the cylinder is pressurized at the constant extrusion tension of-5N, so that the descending speed of the cylinder is 8-10 mm/min; other conditions were unchanged.
The quartz glass produced in comparative example 2, having a diameter of 360mm and a thickness of 300mm, was found to have a metal impurity content of less than 1ppm, a hydroxyl group content of less than 1ppm and an optical uniformity of 14X 10 -6 。
Comparative example 3
Compared with the embodiment 1, the bottom wall with the concave part in the mold is replaced by the common round bottom wall (without the concave part and only with the plane part), the pressure is applied in the bottom wall mold without the concave part, and other conditions are not changed;
the quartz glass prepared in comparative example 3 had irregular quartz glass fragments at the edge, the quartz gyro output diameter was 360mm, the thickness was 300mm, the actual effective diameter was 340mm, the thickness was 290mm, the content of metal impurities was less than 1ppm, the content of hydroxyl groups was less than 1ppm, and the optical uniformity was 32X 10 -6 。
Therefore, the preparation method of the quartz glass provided by the invention can avoid the phenomenon that the homogeneity of the quartz glass is deteriorated due to the generation of stripes and bubbles after the quartz glass blank is softened, so that the quartz glass with large size, high optical homogeneity and low hydroxyl content is prepared, the preparation process is green and environment-friendly, and the production cost can be reduced.
The above detailed description of the preferred embodiments of the present invention and experimental verification. It should be understood that numerous modifications and variations could be devised by those skilled in the art in light of the present teachings without departing from the inventive concepts. Therefore, the technical solutions available to those skilled in the art through logic analysis or limited experiments based on the prior art according to the concept of the present invention should be within the scope of protection defined by the appended claims.
Claims (10)
1. A preparation method of large-size quartz glass is characterized by comprising the following steps:
carrying out dehydroxylation treatment and sintering treatment on the silicon dioxide loose body to obtain a quartz glass blank;
placing the quartz glass blank in a die cavity for first differential heat treatment and pressing the quartz glass blank in a first direction to obtain the quartz glass;
the mold cavity comprises a first temperature area and a second temperature area along the first direction in sequence, and the quartz glass blank comprises a second part corresponding to the second temperature area and a first part corresponding to at least part of the first temperature area;
in the first differential heat treatment, the temperature of the second temperature area is higher than that of the first temperature area, and the temperature of the second temperature area is not less than 1600 ℃;
in the pressure application treatment, the deformation speed of the quartz glass blank is not higher than 10mm/min;
the mold cavity is internally provided with a bottom wall for receiving the quartz glass, and the bottom wall is provided with a recess.
2. The method according to claim 1, wherein before the first differential heat treatment, the method further comprises soaking the quartz glass blank;
in the heat equalizing treatment, the temperature T1 of the first temperature area is equal to the temperature T2 of the second temperature area, the temperature T1 is more than or equal to 1300 ℃, the temperature T2 is less than 1600 ℃, and the time is not less than 60min.
3. The production method according to claim 1 or 2, wherein in the first differential heat treatment, the temperature of the first temperature zone is T1, and the temperature of the second temperature zone is T2, wherein 1300 ℃ to T1 < 1600 ℃,1600 ℃ to T2 to 1800 ℃.
4. The production method according to any one of claims 1 to 3, further comprising a second differential heat treatment after the pressing treatment;
the temperature of the second differential heat treatment is increased by 20-50 ℃ compared with the temperature of the second temperature area in the first differential heat treatment, and the time is not less than 10min.
5. The production method according to any one of claims 1 to 4, wherein the temperature increase rate of each heat treatment is 3 ℃/min to 8 ℃/min.
6. The production method according to any one of claims 1 to 5, wherein a deformation speed of the quartz glass blank in the pressing treatment is 3mm/min to 10mm/min.
7. The production method according to any one of claims 1 to 6, wherein the mold cavity has a bottom wall for receiving the silica glass, the bottom wall including a depressed portion at a center and a flat portion provided around a periphery of the depressed portion, the depressed portion being depressed in a direction away from the center of the mold cavity.
8. A large-size quartz glass produced by the production method according to any one of claims 1 to 7.
9. A production system for large-size quartz glass, characterized by being used for carrying out the production method according to any one of claims 1 to 7, said system comprising at least:
the sintering furnace is used for carrying out dehydroxylation treatment and sintering treatment on the silicon dioxide loose body;
the groove sinking furnace comprises a furnace shell, a mold with a mold cavity, a pressing unit, a first heating unit and a second heating unit;
the mould cavity is positioned in a heating cavity formed by surrounding the furnace shell, and the first heating unit and the second heating unit are positioned between the furnace shell and the mould and are sequentially arranged according to a first direction;
the pressing unit is arranged in the die cavity and reciprocates along the first direction in the die cavity.
10. A production system according to claim 9, wherein the mould chamber has a bottom wall for receiving the quartz glass, the bottom wall comprising a centrally located depression and a planar portion surrounding the depression, the depression being depressed away from the centre of the mould chamber.
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