CN115259159A - Inverted cone-shaped nitrogen-doped silicon carbide nanowire with high length-diameter ratio and preparation method thereof - Google Patents
Inverted cone-shaped nitrogen-doped silicon carbide nanowire with high length-diameter ratio and preparation method thereof Download PDFInfo
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Abstract
The invention relates to a reversed cone-shaped nitrogen-doped silicon carbide nanowire with a high length-diameter ratio and a preparation method thereof. The prepared inverted cone-shaped silicon carbide nanowire has smooth surface, uniform appearance and high yield. The method effectively solves the problems of high cost, complex operation, uneven nanowire structure, low length-diameter ratio, low yield, low purity and the like of the existing silicon carbide nanowire preparation process, can grow the inverted cone-shaped silicon carbide nanowire in situ on different carbon matrixes, provides a new technology and method for preparing the inverted cone-shaped silicon carbide nanowire, and is expected to be widely applied to the fields of energy storage, field emission, toughening materials, nano composite materials and the like.
Description
Technical Field
The invention belongs to the field of preparation of silicon carbide nanowires, and relates to a high-length-diameter-ratio inverted-cone-shaped nitrogen-doped silicon carbide nanowire and a preparation method thereof.
Background
One-dimensional silicon carbide nanostructures such as whiskers, nanowires, nanotubes, nanobelts, nanorods and the like are receiving attention due to their excellent characteristics of low thermal expansion coefficient, strong radiation resistance, large drift velocity, high thermal conductivity, good thermal shock stability, oxidation resistance, corrosion resistance and the like. The silicon carbide nanowire has excellent electronic and mechanical properties, and also has excellent physical and chemical properties such as multifunction, biocompatibility, chemical stability, transparency to visible light and the like, so that the silicon carbide nanowire becomes an ideal novel material with great application prospects in the fields of sensors (gas and biosensors), energy sources, field emitters, catalysts, nanocomposite materials and the like. In addition, studies have shown that silicon carbide one-dimensional nanostructures with fluctuating diameters (such as chain beads, inverted cones, and bamboos) are expected to achieve superior performance in the above-mentioned fields, as compared to ordinary linear nanostructures with uniform profiles.
In recent years, extensive research has been carried out on the aspect of regulating and controlling the microstructure of the silicon carbide nanowires, and researchers prepare silicon carbide nanowires with different sizes and shapes, such as linear, bamboo-shaped, chain bead-shaped, spiral, core-shell structures and the like, by different methods. Patent 1 (CN 201911054722.4) prepares bead-like silicon carbide nanowires by pyrolysis of high-polymerization-degree silicon resin, but the special structure is obtained along with the generation of silicon carbide particles and linear silicon carbide nanowires, so that the morphology of the product is not uniform and the purity of the nanowires is not high. Document 1 discloses zhang x, chen y, xie z, et al, shape and while enhancing field emission properties of qualified 3C-SiC nanowires [ J ]. The Journal of Physical Chemistry C,2010,114 (18): 8251-8255. "preparation of silicon carbide nanowires having tapered and bamboo-like shapes by introducing an aluminum catalyst during pyrolysis of polysilazane, but this preparation method uses a polymer precursor as a raw material and is costly. In addition, researches show that nitrogen doping can be an effective method for enhancing the performances of field emission, energy storage and the like of the silicon carbide nanowire. Aiming at the preparation method of the nitrogen-doped silicon carbide nanowire with special morphology, a nitrogen-doped silicon carbide nanowire array is prepared by adopting a catalyst to assist a polymer precursor pyrolysis process and taking nitrogen as a nitrogen source in the process of Chen S, ying P, wang L, et al, growth of flexible N-doped SiC qualified nanoarray and the field emission properties [ J ]. Journal of Materials Chemistry C,2013,1 (31): 4779-4784. However, the preparation method takes polysilazane as a raw material for preparing the silicon carbide nanowire, and the cost is high. On the other hand, if the ratio of nitrogen to argon is not controlled, the silicon nitride nanowires may be obtained instead of the silicon carbide nanowires. The research group also used the above-described similar methods to prepare nitrogen-doped silicon carbide nanoneedles (document 3"Chen S, ying P, wang L, et al, high hly flexible and robust N-doped SiC nanoneedle fields entities [ J ]. NPG Asia Materials,2015,7 (1): 1-8."), although the flexible N-type silicon carbide field emitters had excellent electron emission characteristics, the high cost of the raw Materials still limited their further applications.
Disclosure of Invention
Technical problem to be solved
In order to avoid the defects of the prior art, the invention provides the inverted-cone-shaped nitrogen-doped silicon carbide nanowire with the high length-diameter ratio and the preparation method thereof.
Technical scheme
The inverted cone-shaped nitrogen-doped silicon carbide nanowire with the high length-diameter ratio is characterized in that the silicon carbide nanowire growing on a matrix is 3C-SiC and is in the shape of an inverted cone-shaped nitrogen-doped nanowire with the high length-diameter ratio.
The substrate includes, but is not limited to: carbon fiber cloth, carbon felt, graphite paper, carbon fiber paper, graphite flake or carbon/carbon composite material.
When the high-length-diameter ratio inverted-cone-shaped nitrogen-doped nanowire grows on the carbon fiber cloth as a substrate, the inverted cone-shaped nanowire is gradually reduced in diameter in the radial direction, the length range is 30-40 mu m, the diameter range is 0.05-1.5 mu m, the length-diameter ratio reaches 800, the surface of the nanowire is smooth, and the shape of the nanowire is uniform.
When the reversed-cone-shaped nitrogen-doped nanowire with the high length-diameter ratio grows on the basis of graphite paper, the nanowire has a reversed-cone-shaped appearance and is smooth in surface, the length range is 40-60 mu m, the diameter range is 0.05-1 mu m, and the highest length-diameter ratio reaches 1200.
A method for preparing the inverted cone-shaped nitrogen-doped silicon carbide nanowire with the high length-diameter ratio is characterized by comprising the following steps:
step 1, substrate treatment: placing the substrate in 0.1-1 mol/L metal salt/ethanol solution for soaking for 1-10 h, then taking out the substrate and placing the substrate in a drying oven at 60-100 ℃ for drying for 5-24 h;
and 3, step 3: and synthesizing the inverted cone-shaped nitrogen-doped silicon carbide nanowire: putting the powder obtained in the step (2) into a first alumina crucible (1), putting the base body soaked with the metal salt into the first alumina crucible (1), putting the base body at the top of the alumina crucible, and pouring the nitrogen source powder or solution into a second alumina crucible (2); two alumina crucibles are placed in an atmosphere sintering furnace, a first alumina crucible 1 is positioned in a temperature zone of the sintering furnace, a second alumina crucible 2 is positioned at the upstream position of the alumina crucible 1, and the distance between the two crucibles is 1-10 cm;
vacuumizing the atmosphere sintering furnace, and controlling the vacuum degree of the atmosphere sintering furnace to be 0.1-0.4 Pa; then filling argon into the atmosphere sintering furnace at the flow rate of 10-200 mL/min; and then heating the atmosphere sintering furnace to 1300-1800 ℃ at the heating rate of 5-20 ℃/min, preserving the heat at the temperature for 1-10 h, then stopping heating, cooling to room temperature along with the furnace, and opening the furnace to obtain the inverted cone-shaped silicon carbide nanowire with the high length-diameter ratio on the substrate.
And (2) cleaning the substrate in the step (1) by using deionized water, absolute ethyl alcohol and acetone respectively, and drying the substrate in an oven at the temperature of 60-100 ℃ for 8-24 h.
The distance between the matrix in the first alumina crucible 1 and the bottom of the crucible is 1-5 cm.
The metal salt solutions include, but are not limited to: ferric nitrate, cobalt nitrate, nickel nitrate, ferrous sulfate, cobalt sulfate, nickel sulfate, ferric chloride, cobalt chloride or nickel chloride.
The nitrogen source includes, but is not limited to: dicyandiamide, melamine, urea, urotropin or cyanamide or ethylenediamine.
Advantageous effects
The invention provides a reversed cone-shaped nitrogen-doped silicon carbide nanowire with a high length-diameter ratio and a preparation method thereof. The prepared inverted cone-shaped silicon carbide nanowire has smooth surface, uniform appearance and high yield. The method effectively solves the problems of high cost, complex operation, uneven nanowire structure, low length-diameter ratio, low yield, low purity and the like of the existing silicon carbide nanowire preparation process, can grow the inverted cone-shaped silicon carbide nanowire in situ on different carbon matrixes, provides a new technology and method for preparing the inverted cone-shaped silicon carbide nanowire, and is expected to be widely applied to the fields of energy storage, field emission, toughening materials, nano composite materials and the like.
The invention adopts simple chemical vapor deposition process and new nitrogen doping mode, and obtains the inverted cone-shaped silicon carbide nano-wire with high length-diameter ratio on different carbon substrates by changing the distance between the nitrogen source and the raw material for synthesizing the silicon carbide nano-wire in the furnace body and various process parameters. The technical scheme provided by the invention has the advantages of low raw material cost, simple preparation process, controllable process, strong repeatability and high yield, the obtained nitrogen-doped silicon carbide nanowire has high length-diameter ratio and uniform structure, the growth of the nanowire follows a vapor-liquid-solid (VLS) growth mechanism, and the nanowire is expected to be widely applied to the fields of energy storage, field emission, toughening materials, nano composite materials and the like.
The advantages can be represented from the attached drawings:
fig. 1 is a flow chart of a preparation process of an inverted cone-shaped nitrogen-doped silicon carbide nanowire with a high length-diameter ratio, the flow chart clearly shows a preparation process of the inverted cone-shaped nitrogen-doped nanowire provided by the invention, the preparation process mainly comprises 3 steps, and the operation is simple. Fig. 2 is a schematic diagram of an experimental apparatus for preparing the inverted-cone-shaped nitrogen-doped silicon carbide nanowire with a high aspect ratio, from which the positions of two alumina crucibles and raw materials in an atmosphere sintering furnace can be known. Fig. 3 is an XRD spectrum of the reversed conical nitrogen-doped silicon carbide nanowire with high aspect ratio prepared by the present invention, and it can be known from the XRD of fig. 3 that the silicon carbide nanowire prepared by the present invention has a main component of 3C-SiC. Fig. 4 is a low-magnification SEM representation of the high aspect ratio inverted cone-shaped nitrogen-doped silicon carbide nanowires grown on the carbon fiber cloth as the substrate according to the present invention, from which it can be known that a large number of nanowires are grown in situ on the carbon fiber cloth, indicating that the high-yield nitrogen-doped silicon carbide nanowires can be obtained by the manufacturing process. FIG. 5 is a high-magnification SEM representation of a high-aspect-ratio inverted cone-shaped nitrogen-doped silicon carbide nanowire grown on a carbon fiber cloth substrate, the inverted cone-shaped morphology of the nitrogen-doped nanowire is clearly visible, namely the diameter of the nitrogen-doped nanowire is gradually reduced in the radial direction, the length range is 30-40 μm, the diameter range is 0.05-1.5 μm, the aspect ratio can reach 800, and the nanowire has a smooth surface and a uniform morphology. The presence of a spherical crown catalyst at the tip of the nanowire is characteristic of the VLS growth mechanism. Fig. 6 is a low-magnification SEM representation of the high aspect ratio inverted cone-shaped nitrogen-doped silicon carbide nanowires grown on the graphite paper substrate according to the present invention, and it can be observed that the carbon fiber paper is covered with the nanowires, which indicates that the yield is high and is not limited by the substrate. FIG. 7 is a high-magnification SEM representation of a high-aspect-ratio inverted-cone-shaped nitrogen-doped silicon carbide nanowire grown on a graphite paper substrate according to the present invention, wherein the nanowire has an inverted cone-shaped morphology and a smooth surface; compared with the inverted cone-shaped silicon carbide nanowire growing in situ by taking the carbon fiber cloth as the substrate, the inverted cone-shaped nitrogen-doped silicon carbide nanowire with higher length-diameter ratio can be obtained by taking the graphite paper as the substrate, the length range is 40-60 mu m, the diameter range is 0.05-1 mu m, and the highest length-diameter ratio can reach 1200. In conclusion, the technical scheme provided by the invention has the advantages of low raw material cost, simple preparation process, controllable process and strong repeatability, the obtained inverted cone-shaped nitrogen-doped silicon carbide nanowire has high length-diameter ratio, uniform structure and high yield, is not limited by the type of a carbonaceous substrate, the growth process of the inverted cone-shaped nitrogen-doped silicon carbide nanowire follows a VLS (very large scale integration) growth mechanism, and the method has wide application prospect.
Drawings
FIG. 1: a process flow chart for preparing the inverted cone-shaped nitrogen-doped silicon carbide nanowire with high length-diameter ratio;
FIG. 2 is a schematic diagram: a schematic diagram of an experimental device for a high-length-diameter ratio inverted cone-shaped nitrogen-doped silicon carbide nanowire;
FIG. 3: the XRD pattern of the inverted cone-shaped nitrogen-doped silicon carbide nanowire with the high length-diameter ratio prepared by the invention;
FIG. 4: according to the invention, a high-length-diameter ratio inverted cone nitrogen-doped silicon carbide nanowire low-power SEM representation diagram grows by taking carbon fiber cloth as a substrate;
FIG. 5 is a schematic view of: the invention takes carbon fiber cloth as a substrate to grow an SEM representation diagram with high magnification for the reversed cone-shaped nitrogen-doped silicon carbide nanowire;
FIG. 6: according to the invention, a high-length-diameter ratio inverted cone-shaped nitrogen-doped silicon carbide nanowire low-power SEM representation picture grown by taking graphite paper as a substrate is provided;
FIG. 7: the invention relates to a high-power SEM representation diagram of a high-length-diameter ratio inverted-cone nitrogen-doped silicon carbide nanowire grown on a graphite paper substrate.
Detailed Description
The invention will now be further described with reference to the following examples and drawings:
example 1:
1. substrate treatment:
washing carbon fiber cloth with deionized water, absolute ethyl alcohol and acetone respectively, placing the carbon fiber cloth in a 70 ℃ oven for drying for 12 hours, placing the dried carbon fiber cloth in a 0.5mol/L ferric nitrate/ethanol solution for soaking for 3 hours, taking out the carbon fiber cloth, placing the carbon fiber cloth in the 70 ℃ oven for drying for 12 hours;
2. powder mixing:
mixing SiO2Mixing Si powder and C powder according to a mass ratio of 1:0.2:0.5, grinding in a planetary ball mill for 12 hours at 200 revolutions per minute to obtain mixed uniform powder, taking out the mixed uniform powder, and drying in a 70 ℃ oven for 12 hours to obtain a raw material 1;
3. synthesizing the inverted cone-shaped nitrogen-doped silicon carbide nanowire:
weighing 2g of the raw material 1 obtained in the step two, putting the raw material into an alumina crucible 1, and arranging the dried carbon fiber impregnated with ferric nitrate on the top of the alumina crucible 1, wherein the distance from the top of the alumina crucible 1 to the bottom of the crucible is 3cm; weighing 2g of melamine and pouring into an alumina crucible 2; placing the alumina crucibles 1 and 2 into an atmosphere sintering furnace, and enabling the alumina crucible 1 to be positioned at a temperature zone of the sintering furnace, the alumina crucible 2 to be positioned at an upstream position of the alumina crucible 1, and the distance between the two crucibles is 2cm; vacuumizing, and controlling the vacuum degree of the atmosphere sintering furnace to be 0.1Pa; then filling argon into the atmosphere sintering furnace at the flow rate of 10 mL/min; and then heating the atmosphere sintering furnace to 1600 ℃ at the heating rate of 5 ℃/min, preserving heat for 4 hours at the temperature, then stopping heating, cooling to room temperature along with the furnace, and opening the furnace to obtain the inverted cone-shaped silicon carbide nanowire with the high length-diameter ratio, thereby completing the preparation.
Example 2:
1. substrate treatment:
cleaning graphite paper with deionized water, absolute ethyl alcohol and acetone respectively, placing the graphite paper in a 70 ℃ oven for drying for 12 hours, placing the dried graphite paper in a 0.5mol/L ferric nitrate/ethyl alcohol solution for soaking for 3 hours, taking out the graphite paper, placing the graphite paper in the 70 ℃ oven for drying for 12 hours;
2. powder mixing:
mixing SiO2Mixing Si and C powder according to a mass ratio of 1.2;
3. synthesizing the inverted cone-shaped nitrogen-doped silicon carbide nanowire:
weighing 2g of the raw material 1 obtained in the step two, putting the raw material into an alumina crucible 1, and placing the dried graphite paper impregnated with ferric nitrate at the top of the alumina crucible 1, wherein the distance from the top of the alumina crucible 1 to the bottom of the crucible is 3cm; weighing 2g of melamine and pouring into an alumina crucible 2; placing the alumina crucibles 1 and 2 into an atmosphere sintering furnace, and enabling the alumina crucible 1 to be positioned at a temperature zone of the sintering furnace, the alumina crucible 2 to be positioned at an upstream position of the alumina crucible 1, and the distance between the two crucibles is 2cm; vacuumizing, and controlling the vacuum degree of the atmosphere sintering furnace to be 0.1Pa; then filling argon into the atmosphere sintering furnace at the flow rate of 10 mL/min; and then heating the atmosphere sintering furnace to 1600 ℃ at the heating rate of 5 ℃/min, preserving heat for 4 hours at the temperature, then stopping heating, cooling to room temperature along with the furnace, and opening the furnace to obtain the inverted cone-shaped silicon carbide nanowire with the high length-diameter ratio, thereby completing the preparation.
Example 3:
1. substrate treatment:
cleaning carbon fiber cloth with deionized water, absolute ethyl alcohol and acetone respectively, placing the carbon fiber cloth in a 70 ℃ oven for drying for 12h, placing the dried carbon fiber cloth in a 0.5mol/L cobalt nitrate/ethanol solution for soaking for 3h, taking out the carbon fiber cloth, and placing the carbon fiber cloth in the 70 ℃ oven for drying for 12 h;
2. powder mixing:
mixing SiO2Mixing Si and C powder according to a mass ratio of 1.2;
3. synthesizing the inverted cone-shaped nitrogen-doped silicon carbide nanowire:
weighing 2g of the raw material 2 obtained in the step two, putting the raw material into an alumina crucible 1, and arranging the dried carbon fiber impregnated with the cobalt nitrate on the top of the alumina crucible 1 at a distance of 3cm from the bottom of the crucible; weighing 1g of ethylenediamine and pouring the ethylenediamine into an alumina crucible 2; putting the alumina crucibles 1 and 2 into an atmosphere sintering furnace, and enabling the alumina crucible 1 to be positioned at a temperature zone of the sintering furnace, the alumina crucible 2 to be positioned at the upstream position of the alumina crucible 1, and the distance between the two crucibles is 2cm; vacuumizing, and controlling the vacuum degree of the atmosphere sintering furnace to be 0.1Pa; then filling argon into the atmosphere sintering furnace at the flow rate of 50 mL/min; and then heating the atmosphere sintering furnace to 1600 ℃ at the heating rate of 5 ℃/min, preserving heat for 4 hours at the temperature, then stopping heating, cooling to room temperature along with the furnace, and opening the furnace to obtain the inverted cone-shaped silicon carbide nanowire with the high length-diameter ratio, thereby completing the preparation.
Example 4:
1. substrate treatment:
cleaning graphite flakes with deionized water, absolute ethyl alcohol and acetone respectively, placing the cleaned graphite flakes in a 70 ℃ oven for drying for 12 hours, placing the dried graphite flakes in 0.2mol/L ferric nitrate/ethanol solution for soaking for 2 hours, taking out the graphite flakes, and placing the graphite flakes in the 70 ℃ oven for drying for 12 hours;
2. powder mixing:
mixing SiO2Mixing Si powder and C powder according to a mass ratio of 1:0.2:0.5, grinding in a planetary ball mill for 12 hours at 200 revolutions per minute to obtain mixed uniform powder, taking out the mixed uniform powder, and drying in a 70 ℃ oven for 12 hours to obtain a raw material 1;
3. synthesizing the inverted cone-shaped nitrogen-doped silicon carbide nanowire:
weighing 4g of the raw material 1 obtained in the step two, putting the raw material into an alumina crucible 1, and placing the dried graphite sheet dipped with ferric nitrate at the top of the alumina crucible 1, wherein the distance from the top of the alumina crucible 1 to the bottom of the crucible is 2cm; weighing 1g of dicyandiamide and pouring the dicyandiamide into an alumina crucible 2; putting the alumina crucibles 1 and 2 into an atmosphere sintering furnace, and enabling the alumina crucible 1 to be positioned at a temperature zone of the sintering furnace, the alumina crucible 2 to be positioned at the upstream position of the alumina crucible 1, and the distance between the two crucibles is 4cm; vacuumizing, and controlling the vacuum degree of the atmosphere sintering furnace to be 0.1Pa; then filling argon into the atmosphere sintering furnace at the flow rate of 100 mL/min; and then heating the atmosphere sintering furnace to 1550 ℃ at the heating rate of 5 ℃/min, preserving heat for 2 hours at the temperature, then stopping heating, cooling to room temperature along with the furnace, and opening the furnace to obtain the inverted cone-shaped silicon carbide nanowire with the high length-diameter ratio, thereby completing the preparation.
The invention provides a preparation method of an inverted cone nitrogen-doped silicon carbide nanowire. The technical scheme provided by the invention has the advantages of low raw material cost, simple preparation process and strong repeatability, and the obtained inverted cone-shaped nitrogen-doped silicon carbide nanowire has high length-diameter ratio, uniform appearance and high yield, is not limited by the type of a carbonaceous substrate, and is expected to be widely applied to the fields of energy storage, field emission, toughening materials, nanocomposite materials and the like. The invention provides a new technology and a method for preparing the inverted cone-shaped silicon carbide nanowire.
The technical solution of the present invention is not limited to the above-mentioned embodiments, and various changes may be made. That is, all other embodiments obtained from the claims and the content of the description of the present application are included in the scope of protection of the present invention.
Claims (9)
1. The inverted cone-shaped nitrogen-doped silicon carbide nanowire with the high length-diameter ratio is characterized in that the silicon carbide nanowire growing on a substrate is 3C-SiC in shape of inverted cone-shaped nitrogen-doped nanowire with the high length-diameter ratio.
2. The high aspect ratio inverted cone nitrogen-doped silicon carbide nanowire of claim 1, wherein: the substrate includes but is not limited to: carbon fiber cloth, carbon felt, graphite paper, carbon fiber paper, graphite sheet, or carbon/carbon composite material.
3. The high aspect ratio inverted conical nitrogen-doped silicon carbide nanowire according to claim 1 or 2, wherein: when the high-length-diameter ratio inverted-cone-shaped nitrogen-doped nanowire grows on the carbon fiber cloth as a substrate, the inverted cone-shaped nanowire is gradually reduced in diameter in the radial direction, the length range is 30-40 mu m, the diameter range is 0.05-1.5 mu m, the length-diameter ratio reaches 800, the surface of the nanowire is smooth, and the shape of the nanowire is uniform.
4. The high aspect ratio inverted conical nitrogen-doped silicon carbide nanowire according to claim 1 or 2, wherein: when the reversed-cone-shaped nitrogen-doped nanowire with the high length-diameter ratio grows on the basis of graphite paper, the nanowire has a reversed-cone-shaped appearance and is smooth in surface, the length range is 40-60 mu m, the diameter range is 0.05-1 mu m, and the highest length-diameter ratio reaches 1200.
5. A method for preparing the inverted cone-shaped nitrogen-doped silicon carbide nanowire with the high aspect ratio according to any one of claims 1 to 4, which is characterized by comprising the following steps:
step 1, substrate treatment: placing the substrate in 0.1-1 mol/L metal salt/ethanol solution for soaking for 1-10 h, then taking out the substrate and placing the substrate in a drying oven at 60-100 ℃ for drying for 5-24 h;
step 2, powder mixing: mixing SiO2Mixing Si and C powder according to the mass ratio of 1: 0.1-0.5, grinding in a planetary ball mill at 150-200 rpm for 12-24 h to obtain mixed uniform powder, taking out, and placing in an oven at 60-100 ℃ for drying for 5-12 h;
and step 3: and synthesizing the inverted cone-shaped nitrogen-doped silicon carbide nanowire: putting the powder obtained in the step (2) into a first alumina crucible (1), putting the base body soaked with the metal salt into the first alumina crucible (1), putting the base body at the top of the alumina crucible, and pouring the nitrogen source powder or solution into a second alumina crucible (2); two alumina crucibles are placed in an atmosphere sintering furnace, a first alumina crucible 1 is positioned in a temperature area of the sintering furnace, a second alumina crucible 2 is positioned at the upstream position of the alumina crucible 1, and the distance between the two crucibles is 1-10 cm;
vacuumizing the atmosphere sintering furnace, and controlling the vacuum degree of the atmosphere sintering furnace to be 0.1-0.4 Pa; then filling argon into the atmosphere sintering furnace at the flow rate of 10-200 mL/min; and then heating the atmosphere sintering furnace to 1300-1800 ℃ at the heating rate of 5-20 ℃/min, preserving the heat at the temperature for 1-10 h, then stopping heating, cooling to room temperature along with the furnace, and opening the furnace to obtain the inverted cone-shaped silicon carbide nanowire with the high length-diameter ratio on the substrate.
6. The method of claim 5, wherein: and (2) cleaning the substrate in the step (1) by using deionized water, absolute ethyl alcohol and acetone respectively, and drying the substrate in an oven at the temperature of 60-100 ℃ for 8-24 h.
7. The method of claim 5, wherein: the distance between the matrix in the first alumina crucible 1 and the bottom of the crucible is 1-5 cm.
8. The method of claim 5, wherein: the metal salt solutions include, but are not limited to: ferric nitrate, cobalt nitrate, nickel nitrate, ferrous sulfate, cobalt sulfate, nickel sulfate, ferric chloride, cobalt chloride or nickel chloride.
9. The method of claim 5, wherein: the nitrogen source includes but is not limited to: dicyandiamide, melamine, urea, urotropin or cyanamide or ethylenediamine.
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