CN110648857B - Preparation method of highly graphitized ultrathin carbon film coated SiC nanowire - Google Patents
Preparation method of highly graphitized ultrathin carbon film coated SiC nanowire Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
- H01G11/32—Carbon-based
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
- H01G11/32—Carbon-based
- H01G11/36—Nanostructures, e.g. nanofibres, nanotubes or fullerenes
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- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
- H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
The invention belongs to the technical field of nano material preparation, and relates to a preparation method of a high-graphitization ultrathin carbon film coated SiC nanowire. The preparation method comprises the following steps: and (2) soaking the nitrogen-doped SiC nanowire in hydrofluoric acid aqueous solution for 10-20min, then respectively taking the nitrogen-doped SiC nanowire, a platinum sheet electrode and a carbon quantum dot aqueous solution as a working electrode, a counter electrode and electrolyte, depositing for 1.5-3h at a voltage of 2-3V, and calcining the deposited nitrogen-doped SiC nanowire for 20-40min at the temperature of 850-950 ℃ under the protection of inert gas.
Description
Technical Field
The invention belongs to the technical field of nano material preparation, and relates to a preparation method of a high-graphitization ultrathin carbon film coated SiC nanowire.
Background
As a third-generation semiconductor material, SiC has excellent physicochemical properties such as a wide band gap, high electron mobility, high thermal conductivity, and good corrosion resistance. The high-stability photoelectric sensor has strong stability under the conditions of high frequency, high temperature, strong radiation and the like, and has unique application prospect in the fields of photoelectric and force-electricity sensors such as luminescence, field effect transistors, force-electricity conversion and the like.
The SiC nanometer material is particularly stable in performance in all aspects, so that the SiC nanometer material is used for a super capacitor and also shows excellent cycling stability. But the conductivity of the SiC nanometer material is poor, and the single SiC nanometer material serving as the electrode of the super capacitor cannot meet the high-performance requirement of the device. There are reports on improving the electrochemical performance of the composite material by modifying the surface of the SiC nano material, such as in the article of Ni-coated SiC core-shell nano particles prepared by electroless plating and dielectric response thereof, such as fructus, etc., the nano nickel particles are coated on the surface of the SiC nano particles, thereby improving the electrochemical performance of the composite materialHigh electrical conductivity of the composite material. For example, Zhao et al (J. Powersources 2016,332,355-2S4、NiCo2O4/NiO、Fe2O3、NiCo2O4/Ni(OH)2And the active materials improve the specific surface area of the whole material and promote the scientific research of the SiC nanowire composite material in the aspect of the super capacitor.
The current research on SiC nano composite materials mainly focuses on metal oxide systems and metal particles coated on the surfaces of the particles, however, the performance stability of devices based on SiC structural units can be reduced due to the intervention of the series of materials. Therefore, it is of great significance to find other methods for modifying the SiC nanometer material to improve the conductivity and the cycling stability for being applied to the super capacitor.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a preparation method of a high-graphitization ultrathin carbon film coated SiC nanowire, which realizes the ultrathin and high graphitization of the carbon film coated with the SiC nanowire.
One purpose of the invention is realized by the following technical scheme:
a preparation method of a highly graphitized ultrathin carbon film coated SiC nanowire comprises the following steps:
and (2) soaking the N-doped SiC nanowire in hydrofluoric acid aqueous solution for 10-20min, then respectively taking the N-doped SiC nanowire, a platinum sheet electrode, a carbon quantum dot aqueous solution as a working electrode, a counter electrode and electrolyte, depositing for 1.5-3h at a voltage of 2-3V, and calcining the deposited N-doped SiC nanowire for 20-40min at the temperature of 850-950 ℃ under the protection of inert gas.
The carbon quantum dots are composed of dispersed spheroidal carbon particles, and the size of the carbon quantum dots is extremely small and less than 10 nm. According to the invention, carbon quantum dots are uniformly deposited on the surface of the N-doped SiC nanowire in an electrodeposition mode, and then high-temperature calcination is carried out, so that the carbon quantum dots with small sizes and uniform distribution are easy to form an ultrathin and highly graphitized carbon film under the high-temperature calcination, and the carbon film is coated on the surface of the N-doped SiC nanowire, thereby effectively improving the electrochemical performance of the SiC nanowire.
The mass fraction of the hydrofluoric acid aqueous solution is preferably 25-40%, and the N-doped SiC nanowires are soaked in the hydrofluoric acid aqueous solution to remove a surface oxide layer and metal catalyst particles, so that the uniform distribution of the carbon quantum dots is facilitated.
The mass concentration of the carbon quantum dot aqueous solution is preferably 0.1-0.3% (w/v). The voltage of the electrodeposition is 2V, and the deposition time is 2 h. The mass concentration, the deposition time and the deposition voltage of the carbon quantum dot aqueous solution comprehensively determine the particle size and the deposition thickness of the carbon quantum dots deposited on the surface of the N-doped SiC nanowire, and the size and the thickness of the deposited carbon quantum dots determine the morphology of the calcined carbon film.
And (3) after electrodeposition, washing with deionized water, and calcining in a tubular furnace under the protection of inert gas at 900 ℃ for 30min, wherein the inert gas is preferably one of argon, helium and nitrogen, and the purity is 99.99%.
The N-doped SiC nanowire is preferably obtained by adopting the preparation method comprising the following steps: the preparation method comprises the steps of carrying out thermal crosslinking curing and ball milling on an organic precursor containing Si and C elements to obtain organic precursor powder, mixing the organic precursor powder with nitrogen source powder, placing the mixture at the bottom of a graphite crucible, placing a carbon fiber cloth substrate soaked with a catalyst at the top of the graphite crucible, placing the graphite crucible in an atmosphere sintering furnace, heating to 1450 ℃ at a speed of 25-35 ℃/min under the protection of inert gas, heating to 1600 ℃ at a speed of 3-5 ℃/min, cooling to 1100 ℃ at a speed of 15-25 ℃/min, and finally cooling to room temperature along with the furnace to obtain the N-doped SiC nanowire taking the carbon fiber cloth as the substrate.
The organic precursor is preferably polysilazane, and Si and C elements are provided. And (3) carrying out thermal crosslinking curing on the organic precursor at the temperature of 240-280 ℃ for 20-40min under the protection of inert atmosphere, putting the solid obtained by curing into a nylon resin ball milling tank, and carrying out ball milling and crushing to obtain organic precursor powder. The nitrogen source is preferably one or more of melamine, dicyandiamide, cyanamide and urea.
The mass ratio of the organic precursor powder to the nitrogen source powder is (2.8-3.2):1, the two are mixed and then placed at the bottom of a graphite crucible, a carbon fiber cloth substrate soaked with a catalyst is covered on the mixture of the two, the catalyst is preferably one or more of cobalt nitrate, nickel nitrate, ferric nitrate and nickel sulfate, the carbon fiber cloth substrate is placed in a catalyst solution (the molar concentration of the catalyst solution is 0.01-0.1 mol/L) and soaked for 10-30min to obtain the carbon fiber cloth substrate soaked with the catalyst, the graphite crucible is placed in an atmosphere sintering furnace heated by a graphite resistor, the atmosphere furnace is firstly vacuumized to 10 DEG-4Pa, and then an inert gas (preferably one of argon, helium and nitrogen, with a purity of 99.99%) is introduced until the pressure is about 0.11MPa, after which the pressure is kept constant. And obtaining the N-doped SiC nanowire taking the carbon fiber cloth as the substrate through high-temperature calcination.
The carbon quantum dot is preferably obtained by adopting the preparation method comprising the following steps: placing a carbon source in an ethanol solution, carrying out ultrasonic treatment for 2-4h, then transferring the solution to a high-pressure reaction kettle, carrying out hydrothermal treatment for 3-5h at the temperature of 150-.
The method for measuring the mass concentration of the carbon quantum dot solution obtained by dialysis comprises the steps of measuring 5m L carbon quantum dot solution in a 10m L centrifugal tube, and recording the weight m of the carbon quantum dot solution1Then putting the mixture into a 60 ℃ oven for drying by distillation, and recording the residual weight m2And the mass of the carbon quantum dots in the 5m L aqueous solution is m1-m2And repeating the three times of averaging to calculate the mass concentration of the carbon quantum dot solution.
The carbon source is preferably vitamin C, and the ethanol solution is preferably a solution obtained by mixing absolute ethanol and water in a volume ratio of 1: 1. The high-pressure reaction kettle is used as a reaction vessel, and the inner container of the high-pressure reaction kettle is preferably made of polytetrafluoroethylene, so that the high-pressure reaction kettle can resist acid and alkali and high temperature.
Preferably, dichloromethane is used for extraction, and the collected aqueous phase solution is preferably purified by dialysis using a dialysis membrane with a molecular weight cut-off of 800-.
The size of the carbon quantum dots obtained in the above steps is 0.5-4.0 nm.
The highly graphitized ultrathin carbon film coated SiC nanowire obtained by the preparation method has the thickness of 3-6 nm.
Compared with the prior art, the invention has the beneficial effects that:
1. the preparation of the SiC nanowire is realized through an organic precursor pyrolysis method, then carbon quantum dots are deposited on the surface of the nanowire array by an electrodeposition method, and the carbon quantum dots are calcined at high temperature, so that the SiC nanowire array material coated by the highly graphitized ultrathin carbon film is finally obtained.
2. The preparation process is simple and controllable, and has good repeatability.
3. The SiC nanowire coated by the highly graphitized ultrathin carbon film prepared by the invention is used as an electrode material, so that the specific capacitance of a capacitor can be improved, and the electrochemical performance parameters such as good cycle life and the like of the electrode material are maintained.
Drawings
FIG. 1(a) is a scanning electron microscope image of N-doped SiC nanowires prepared in example 3;
FIG. 1(b) is a high power scanning electron microscope image of N-doped SiC nanowires prepared in example 3;
fig. 2(a) is a Transmission Electron Microscope (TEM) image of N-doped SiC nanowires prepared in example 3;
fig. 2(b) is a High Resolution Transmission Electron Microscopy (HRTEM) image of N-doped SiC nanowires prepared in example 3;
fig. 3 is an energy dispersive X-ray spectroscopy (EDS) plot of N-doped SiC nanowires prepared in example 3;
FIG. 4(a) is a photograph of a carbon quantum dot luminescent digital photograph prepared in example 3;
FIG. 4(b) is a carbon quantum dot Atomic Force Microscope (AFM) image prepared in example 3;
FIG. 5(a) is a low-magnification SEM image of carbon film modified SiC nanowires prepared in example 3;
FIG. 5(b) is a high-magnification SEM image of carbon film modified SiC nanowires prepared in example 3;
FIG. 6(a) is a TEM image of carbon film-modified SiC nanowires prepared in example 3;
FIG. 6(b) is a High Resolution Transmission Electron Microscopy (HRTEM) image of the carbon film modified SiC nanowires prepared in example 3;
fig. 7(a) is an X-ray diffraction (XRD) pattern of the carbon film-modified SiC nanowire prepared in example 3 and the pure SiC nanowire without carbon film modification;
fig. 7(b) is a raman plot of carbon film modified SiC nanowires and pure SiC nanowires without carbon film modification prepared in example 3;
FIG. 8 is a graph showing the relationship between the specific capacitance and the current density of a two-electrode system constructed by the carbon film-modified SiC nanowire prepared in example 3;
FIG. 9 is a graph of cyclic stability of two electrode systems constructed by carbon film modified SiC nanowires prepared in example 3, measured by cyclic voltammetry at a sweep rate of 100 mV/s.
Detailed Description
The technical solution of the present invention will be further described and explained with reference to the following embodiments and the accompanying drawings. The raw materials used in the examples of the present invention are those commonly used in the art, and the methods used in the examples are those conventional in the art, unless otherwise specified.
Example 1
Soaking the N-doped SiC nanowire in 25% hydrofluoric acid aqueous solution for 15min, then respectively taking the N-doped SiC nanowire, a Pt sheet electrode, a carbon quantum dot aqueous solution (the mass-to-volume ratio of the carbon quantum dot to the aqueous solution is 0.30 g: 100m L) as a working electrode, a counter electrode and an electrolyte, carrying out electrodeposition for 2.5h under the voltage of 2.5V, completing the deposition, cleaning, then placing in a tubular furnace, calcining for 25min under the protection of argon atmosphere at the temperature of 950 ℃, and realizing the preparation of the highly graphitized ultrathin carbon film coated SiC nanowire.
Example 2
Selecting polysilazane as an organic precursor, preserving heat for 25min at 250 ℃ under the protection of Ar atmosphere for thermal crosslinking curing, putting the cured solid into a nylon resin ball milling tank, ball milling and crushing into powder, weighing 280mg polysilazane and 100mg melamine powder, uniformly mixing, placing the mixture at the bottom of a graphite crucible, and cutting 7 × 7cm carbon fiber cloth2Soaking in 0.08 mol/L of nitreTaking out the carbon fiber cloth as a substrate, placing the carbon fiber cloth as the substrate on the top of a graphite crucible, placing the graphite crucible in an atmosphere sintering furnace heated by a graphite resistor, and vacuumizing the atmosphere sintering furnace to 10min-4Pa, and Ar gas (purity 99.99%) was introduced until the pressure became one atmosphere, after which the pressure was constant. The temperature is rapidly increased from the room temperature to 1400 ℃ at the speed of 28 ℃/min, then the temperature is continuously increased to 1500 ℃ at the temperature increasing speed of 4 ℃/min, then the temperature is reduced to 1100 ℃ at the temperature reducing speed of 18 ℃/min, and finally the furnace is cooled to the room temperature. And obtaining the N-doped SiC nanowire taking the carbon fiber cloth as the substrate.
The preparation method comprises the steps of soaking carbon fiber cloth with N-doped SiC nanowires grown in 30% hydrofluoric acid aqueous solution for 10min, then respectively taking the N-doped SiC nanowire carbon fiber cloth, a Pt sheet electrode and carbon quantum dot aqueous solution (the mass of the carbon quantum dots to the volume of the aqueous solution is 0.20 g: 100m L) as a working electrode, a counter electrode and electrolyte, electrodepositing for 2h under 3V voltage, cleaning, then placing in a tubular furnace, calcining for 30min under the protection of argon atmosphere at 850 ℃, and realizing the preparation of the highly graphitized ultrathin carbon film-coated SiC nanowires.
Example 3
Selecting polysilazane as an organic precursor, preserving heat for 30min at 260 ℃ under the protection of Ar atmosphere for thermal crosslinking curing, putting the cured solid into a nylon resin ball milling tank, ball milling and crushing into powder, weighing 300mg polysilazane and 100mg melamine powder, uniformly mixing, placing the powder at the bottom of a graphite crucible, and cutting 5 × 5cm carbon fiber cloth2Soaking in 0.05 mol/L Co (NO)3And (5) soaking in the solution for 10min, taking out and naturally drying. Carbon fiber cloth is used as a substrate and is arranged on the top of a graphite crucible, and the graphite crucible is placed in an atmosphere sintering furnace heated by a graphite resistor. The atmosphere furnace is firstly vacuumized to 10 DEG-4Pa, and then, Ar gas (purity: 99.99%) was introduced until the pressure became-0.11 MPa, after which the pressure was constant. The temperature is rapidly increased from room temperature to 1450 ℃ at the speed of 30 ℃/min, then is continuously increased to 1550 ℃ at the temperature increasing speed of 5 ℃/min, is subsequently reduced to 1100 ℃ at the temperature reducing speed of 20 ℃/min, and is finally cooled to the room temperature along with the furnace. And obtaining the N-doped SiC nanowire taking the carbon fiber cloth as the substrate.
The preparation method of the carbon quantum dot comprises the following steps: 1.0g of vitamin C is put into deionized water (30 ml) and absolute ethyl alcohol (30 ml) for ultrasonic treatment for 2h, then the obtained transparent solution is transferred into a polytetrafluoroethylene high-pressure reaction kettle for packaging, and is subjected to hydrothermal treatment for 4h at the temperature of 160 ℃. And then cooling to room temperature, extracting with dichloromethane, collecting the aqueous phase solution, dialyzing by using a dialysis membrane with the molecular weight cutoff of 1000, and removing other impurities except the carbon quantum dot sample to obtain the carbon quantum dot solution.
The preparation method comprises the steps of soaking carbon fiber cloth with N-doped SiC nanowires grown in 30% hydrofluoric acid aqueous solution for 15min, then respectively taking the N-doped SiC nanowire carbon fiber cloth, a Pt sheet electrode and carbon quantum dot aqueous solution (the mass of the carbon quantum dots to the volume of the aqueous solution is 0.25 g: 100m L) as a working electrode, a counter electrode and electrolyte, carrying out electrodeposition for 2h under 2V voltage, completing deposition, cleaning, then placing in a tubular furnace, and calcining for 0.5h under the protection of argon atmosphere at 900 ℃, thus realizing the preparation of the highly graphitized ultrathin carbon film-coated SiC nanowires.
Fig. 1(a) and (b) are scanning electron micrographs of N-doped SiC nanowires prepared in example 3, the nanowires growing in large areas and being arranged in an array of nanowires with smooth surfaces. Fig. 2(a) is a Transmission Electron Microscope (TEM) image of the N-doped SiC nanowire prepared in example 3, showing that the diameter of the prepared SiC nanowire is about 500 nm; fig. 2(b) is a high-resolution transmission electron microscope (HRTEM) image of the N-doped SiC nanowire prepared in example 3, showing that the adjacent lattice spacing of the prepared SiC nanowire is 0.25nm, which is grown in the [111] (see fig. 2(a)) direction and has good crystallinity; fig. 2(b) is an inset diagram of an electron diffraction (SAED) diagram of a selected region of the N-doped SiC nanowire prepared in example 3, showing that the prepared SiC nanowire has a single crystal structure. Fig. 3 is an energy dispersive X-ray spectroscopy (EDS) graph of the N-doped SiC nanowire prepared in example 3, with a partial enlarged view in the upper right corner, and the results show that the N element is successfully doped into the SiC nanowire and the atomic ratio is about 8.79%.
Fig. 4(a) is a photograph of a digital photo showing the luminescence of the carbon quantum dot prepared in example 3, and the prepared carbon quantum dot aqueous solution emits intense blue-green light under the excitation of 365nm ultraviolet light. FIG. 4(b) is an Atomic Force Microscope (AFM) image of the carbon quantum dots prepared in example 3, the inset corresponds to a plot of the height of the carbon quantum dots at the white dashed line, indicating that the carbon quantum dot height is around 0.8-3.0 nm.
Fig. 5(a) and (b) are SEM images of the carbon film-modified SiC nanowires prepared in example 3, which show that the array-like arrangement of the SiC nanowires is maintained and the surface of the nanowires is smooth. Fig. 6(a) is a TEM image of the carbon film modified SiC nanowire prepared in example 3, and (b) is a High Resolution Transmission Electron Microscope (HRTEM) image of the carbon film modified SiC nanowire prepared in example 3, which shows that the prepared nanowire is wrapped by a wavy carbon film, the adjacent lattice spacing of the carbon film is 0.34nm, which shows that the carbon film is highly graphitized, and the thickness is only about 6 nm. Fig. 7(a) is an X-ray diffraction (XRD) pattern of the carbon film-modified SiC nanowire prepared in example 3 and the pure SiC nanowire without carbon film modification, which shows that the phase composition of the prepared material is 3C-SiC, and has high crystallinity. FIG. 7(b) is a Raman diagram of carbon film-modified and carbon film-unmodified SiC nanowires prepared in example 3, showing that the Raman peak position is 1352cm after electrodeposition of carbon quantum dots for 2h and calcination at 900 ℃ for 0.5h-1And 1593cm-1The corresponding D and G peak ratios, ID/IG, were 0.62, indicating a high degree of graphitization of the surface carbon film.
The highly graphitized ultra-thin carbon film-coated SiC nanowire carbon fiber cloth prepared in example 3 was cut into 2 pieces of completely identical specifications (1.0 × 1.0 cm)2) The square small piece is used as a working electrode, 2 mol/L KCl solution is used as electrolyte to construct a two-electrode system, and the electrochemical performance of the two-electrode system is tested at room temperature.8 is a relation curve graph of specific capacitance and current density of the two-electrode system constructed by carbon film modified SiC nanowires, wherein the relation graph is at 0.2mA/cm2The obtained specific capacitance was 19.3mF/cm at current density2Even if the current density is increased by 50 times to 10mA/cm2The specific capacitance is maintained at 12.4mF/cm2And the retention rate reaches 64.3%, which indicates that the capacitor prepared by the SiC nanowire carbon fiber cloth coated by the highly graphitized ultrathin carbon film has excellent rate capability. FIG. 9 is a graph of cyclic stability of electrodes of two electrode systems constructed by carbon film modified SiC nanowires measured by cyclic voltammetry at a sweep rate of 100mV/s, after 10000 cycles, the specific capacitance retention rate reaches 94.1%, which indicates that highly graphitized ultra-high graphite is adoptedThe capacitor prepared by the SiC nanowire carbon fiber cloth coated by the thin carbon film has excellent electrochemical stability.
The specific embodiments described herein are merely illustrative of the spirit of the invention and do not limit the scope of the invention. Various modifications or additions may be made to the described embodiments or alternatives may be employed by those skilled in the art without departing from the spirit or ambit of the invention as defined in the appended claims.
Claims (8)
1. A preparation method of a highly graphitized ultrathin carbon film coated SiC nanowire is characterized by comprising the following steps:
soaking the N-doped SiC nanowire with the carbon fiber cloth as the substrate in hydrofluoric acid aqueous solution for 10-20min, then respectively taking the N-doped SiC nanowire with the carbon fiber cloth as the substrate, a platinum sheet electrode and carbon quantum dot aqueous solution as a working electrode, a counter electrode and electrolyte, depositing for 1.5-3h under the voltage of 2-3V, and calcining the deposited N-doped SiC nanowire with the carbon fiber cloth as the substrate for 20-40min at the temperature of 850 plus 950 ℃ under the protection of inert gas;
the mass concentration of the carbon quantum dot aqueous solution is 0.1-0.3%;
the preparation method of the carbon quantum dot comprises the following steps: placing a carbon source in an ethanol solution, carrying out ultrasonic treatment for 2-4h, then transferring the solution to a high-pressure reaction kettle, carrying out hydrothermal treatment for 3-5h at the temperature of 150-.
2. The method of claim 1, wherein the deposition is carried out at a voltage of 2V for a deposition time of 2 hours.
3. The preparation method according to claim 1, wherein the preparation method of the N-doped SiC nanowires with the carbon fiber cloth as the substrate comprises the following steps: the preparation method comprises the steps of carrying out thermal crosslinking curing and ball milling on an organic precursor containing Si and C elements to obtain organic precursor powder, mixing the organic precursor powder with nitrogen source powder, placing the mixture at the bottom of a graphite crucible, placing a carbon fiber cloth substrate soaked with a catalyst at the top of the graphite crucible, placing the graphite crucible in an atmosphere sintering furnace, heating to 1450 ℃ at a speed of 25-35 ℃/min under the protection of inert gas, heating to 1600 ℃ at a speed of 3-5 ℃/min, cooling to 1100 ℃ at a speed of 15-25 ℃/min, and finally cooling to room temperature along with the furnace to obtain the N-doped SiC nanowire taking the carbon fiber cloth as the substrate.
4. The preparation method according to claim 3, wherein the organic precursor is polysilazane, the nitrogen source is one or more of melamine, dicyandiamide, cyanamide and urea, and the catalyst is one or more of cobalt nitrate, nickel nitrate, ferric nitrate and nickel sulfate.
5. The method according to claim 3, wherein the mass ratio of the organic precursor powder to the nitrogen source powder is (2.8-3.2): 1.
6. The method according to claim 1 or 3, wherein the inert gas is one of argon and helium, and the purity of the inert gas is 99.99%.
7. The method as claimed in claim 1, wherein the carbon source is vitamin C, and the cut-off molecular weight of the dialysis membrane is 800-.
8. A highly graphitized ultra-thin carbon film-coated SiC nanowire obtained by the production method of claim 1, wherein the carbon film has a thickness of 3 to 6 nm.
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