CN115241118A - Gas circuit of wafer adsorption platform deck - Google Patents
Gas circuit of wafer adsorption platform deck Download PDFInfo
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- CN115241118A CN115241118A CN202211015086.6A CN202211015086A CN115241118A CN 115241118 A CN115241118 A CN 115241118A CN 202211015086 A CN202211015086 A CN 202211015086A CN 115241118 A CN115241118 A CN 115241118A
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- 238000001179 sorption measurement Methods 0.000 title claims abstract description 111
- 239000007789 gas Substances 0.000 claims abstract description 61
- 239000012159 carrier gas Substances 0.000 claims abstract description 4
- 238000009434 installation Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 13
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 238000000926 separation method Methods 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 106
- 230000007246 mechanism Effects 0.000 description 33
- 238000000034 method Methods 0.000 description 9
- 238000012545 processing Methods 0.000 description 8
- 230000000007 visual effect Effects 0.000 description 8
- 238000003825 pressing Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000007888 film coating Substances 0.000 description 6
- 238000009501 film coating Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- 238000003698 laser cutting Methods 0.000 description 5
- 238000010030 laminating Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002114 nanocomposite Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention provides a wafer adsorption carrier gas path which comprises a carrier, wherein a wafer placing area for placing a wafer is arranged on the upper surface of the carrier, an adsorption area is also arranged on the upper surface of the carrier, a negative pressure adsorption gas path is arranged on the carrier, one end of the negative pressure adsorption gas path is arranged in the adsorption area, the other end of the negative pressure adsorption gas path is communicated with a negative pressure source through a pipeline, the negative pressure adsorption gas path comprises an adsorption groove arranged on the upper surface of the adsorption area, the adsorption groove is communicated with a vertical negative pressure channel arranged on the carrier, and the vertical negative pressure channel is communicated with the negative pressure source through a pipeline. After the wafer is adsorbed, the wafer does not emit light, the transparent area around the wafer is transparent, the outline of the wafer can be clearly and obviously shown, and the position of the wafer can be more accurately identified.
Description
Technical Field
The invention belongs to the field of wafer processing, and particularly relates to a gas circuit of a wafer adsorption loading platform.
Background
Wafer processing belongs to the high-precision processing industry, and small errors have certain influence on the wafer processing result, and finally affect the product quality. In the field of semiconductor wafer dicing, with the increasing degree of integration of large-scale integrated circuits, the semiconductor industry has increasingly high requirements on the size of silicon wafers and also has more strict requirements on the processing precision of the silicon wafers. Silicon wafer carrier trays are the mechanism used to hold silicon wafers for laser cutting and other processes. The stability and accuracy of the suction of the silicon wafer can affect the position of the wafer thereon, and thus the accuracy of the wafer. Improving the accuracy of a silicon wafer stage is important for high-precision wafer processing.
Disclosure of Invention
The invention provides a gas circuit of a wafer adsorption carrier.
The object of the invention is achieved in the following way: the wafer adsorption carrier gas circuit comprises a carrier, wherein a wafer placing area used for placing a wafer is arranged on the upper surface of the carrier, an adsorption area is further arranged on the upper surface of the carrier, a negative pressure adsorption gas circuit is arranged on the carrier, one end of the negative pressure adsorption gas circuit is arranged in the adsorption area, the other end of the negative pressure adsorption gas circuit is communicated with a negative pressure source through a pipeline, the negative pressure adsorption gas circuit comprises an adsorption groove arranged on the upper surface of the adsorption area, the adsorption groove is communicated with a vertical negative pressure channel arranged on the carrier, and the vertical negative pressure channel is communicated with the negative pressure source through a pipeline.
The adsorption tank comprises a plurality of concentrically arranged annular adsorption tanks and radial adsorption tanks connected with the annular adsorption tanks, and the radial adsorption tanks are communicated with the vertical negative pressure channel.
The carrying platform comprises a base which is hollow inside and is provided with an opening at the upper end and a carrying disc which is arranged at the opening end of the base, wherein a carrying disc installation cavity is arranged in the base, and the carrying disc is arranged in the carrying disc installation cavity; a gap is arranged between the outer circumferential surface of the loading disc and the inner circumferential surface of the loading disc mounting cavity; the tail end of the radial adsorption groove far away from the center of the carrier disc extends to the edge of the carrier disc, the inner wall of the carrier disc mounting cavity is provided with the vertical negative pressure groove corresponding to one end of the radial adsorption groove far away from the circle center along the circumference, the vertical negative pressure channel comprises the vertical negative pressure groove, at least one vertical negative pressure groove is communicated with an air guide hole, and the air guide hole is arranged in the inner wall of the carrier disc mounting cavity; the other end of the air guide hole is communicated with the negative pressure source through a pipeline.
The base includes first base and the fixed second base that sets up on first base, it sets up in the second base upper end to carry a set installation cavity, set up the light source installation cavity in the first base, the air guide hole is including setting up horizontal air guide hole and the vertical air guide hole of the intercommunication of each other on the second base, set up on the annular lateral wall of first base with the first vertical gas passage of vertical air guide hole intercommunication, first base bottom sets up the horizontal negative pressure groove of base that passes through the central through-hole of pipe connection and one end and first vertical gas passage lower extreme intercommunication with the negative pressure source, the horizontal negative pressure groove other end of base and central through-hole intercommunication.
A second vertical gas channel is also arranged on the annular side wall of the first base; and the annular side wall is also provided with an annular gas groove communicated with the first vertical gas channel and the second vertical gas channel.
The carrying platform comprises a base with a hollow inner part and an opening at the upper end and a carrying disc arranged on the opening end of the base, wherein a middle through hole is formed in the carrying platform and penetrates through the base and the carrying disc; a first annular plate is arranged on the base around the middle through hole, a second annular plate is also arranged on the base, and the first annular plate is arranged in an area surrounded by the second annular plate; the light source accommodating cavity for accommodating the annular light source is arranged between the second annular plate and the annular outer wall of the base; a third vertical gas channel is arranged on the inner wall of the first annular plate along the circumference, an adsorption through hole communicated with the third vertical gas channel is formed in the carrier disc, and the adsorption through hole is formed in one end, close to the center of the carrier disc, of the radial adsorption groove; the first ring plate, the second ring plate and the carrying disc are enclosed to form a negative pressure cavity; and the bottom of the negative pressure cavity is provided with an air outlet communicated with a negative pressure source through a pipeline.
The adsorption tanks also comprise separating tanks which divide each annular adsorption tank into a plurality of arc adsorption tanks arranged at intervals, and the track of each separating tank is arc; two adjacent separating grooves are symmetrically arranged.
The upper surface of the carrying platform comprises a transparent area made of a light-transmitting material, and the transparent area comprises a wafer contour line peripheral area which is larger than the wafer placing area; the position, closest to the light source, on the carrying disc is a light source receiving surface, the light source receiving surface and the transparent area of the carrying disc are made of light-transmitting materials, and the light source receiving surface and the transparent area are located on the same side of the light source.
The wafer is fixed on the carrier through the negative pressure adsorption structure, the wafer placing area and the edge of the wafer placing area are both arranged into transparent areas, and the transparent areas are lightened in the using process of the equipment after the light source is arranged inside or at the lower part of the carrier. After the wafer is adsorbed, the wafer does not emit light, the transparent area around the wafer is transparent, the outline of the wafer can be clearly and clearly shown, and the position of the wafer can be more accurately identified.
Drawings
Fig. 1 is a perspective view of the stage. Fig. 2 is a perspective view of the boat. Fig. 3 is a perspective view of the second base. Fig. 4 is a perspective view of the first base. Fig. 5 is a top view of fig. 1. Fig. 6 is an enlarged view of a portion E of fig. 5. Fig. 7 isbase:Sub>A sectional view taken along the linebase:Sub>A-base:Sub>A of fig. 5. Fig. 8 is an enlarged view of a portion B of fig. 7. Fig. 9 is an embodiment of a carrier with intermediate through holes. Fig. 10 is a top view of fig. 9. Fig. 11 is a sectional view taken along line C-C of fig. 10. Fig. 12 is an enlarged view of a portion D of fig. 11. Fig. 13 is a perspective view of the base of the stage of fig. 9. Fig. 14 is a cross-sectional view of fig. 13. FIG. 15 is a schematic view of a lamination station. Fig. 16 is a front view of fig. 15. Fig. 17 is a top view of fig. 15. Fig. 18 is a schematic diagram of a laser stealth cutting apparatus.
Wherein 2 is a carrier, 20 is a transparent region, 21 is a first base, 22 is a second base, 23 is a carrier plate, 24 is a carrier plate mounting cavity, 25 is a light source mounting cavity, 26 is a base, 27 is an annular suction groove, 28 is a radial suction groove, 29 is a vertical negative pressure groove, 30 is an air guide hole, 31 is a first vertical air passage, 32 is a central through hole, 33 is a base transverse negative pressure groove, 34 is a second vertical air passage, 35 is an annular air groove, 36 is a middle through hole, 37 is a first annular plate, 38 is a second annular plate, 39 is a third vertical air passage, 40 is a suction through hole, 41 is a separation groove, 42 is an air outlet hole, 5 is a light source, 6 is a laminating table, 60 is a lifting support column, 61 is a lifting driving mechanism, 62 is a base frame, 63 is a gate-type frame, 64 is a laminating cylinder, 65 is a laminating roller, 7 is a table, 70 is a support rail, 71 is a beam, 72 is a longitudinal moving table, 73 is a laser cutting mechanism, 74 is a visual positioning mechanism, and 75 is a mounting frame.
Detailed Description
In the present invention, unless otherwise specifically defined and limited, technical terms used herein shall have the ordinary meaning as understood by those skilled in the art to which the present invention pertains. The terms "connected", "fixed", "arranged" and the like are to be understood in a broad sense, and can be fixedly connected, detachably connected or integrated; can be directly connected or indirectly connected through an intermediate medium; either mechanically or electrically. Unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may be directly contacting the first and second features, or indirectly contacting the first and second features through intervening media. Furthermore, a first feature may be "on" or "over" or "above" a second feature, and the like, may be directly on or obliquely above the second feature, or may simply mean that the first feature is at a higher level than the second feature. A first feature "under" or "beneath" a second feature may be directly under or obliquely under the first feature or may simply mean that the first feature is at a lesser level than the second feature. Relational terms such as first, second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Terms used in the description such as "center", "transverse", "longitudinal", "length", "width", "thickness", "height", "front", "back", "left", "right", "up", "down", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential", "clockwise", "counterclockwise", etc., are used to indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated.
The technical solution of the present invention will be clearly and completely described below with reference to the accompanying drawings and specific embodiments. As shown in fig. 1 to 8, a transparent stage 2 of a wafer laser stealth-cutting device is provided, wherein a wafer placing area for placing a wafer is arranged on an upper surface of the stage 2, an adsorption area is further arranged on the upper surface of the stage 2, a negative pressure adsorption gas path is arranged on the stage 2, one end of the negative pressure adsorption gas path is arranged in the adsorption area, and the other end of the negative pressure adsorption gas path is communicated with a negative pressure source through a pipeline. The upper surface of the carrying platform 2 comprises a transparent area 20 made of a light-transmitting material, and the transparent area 20 comprises a wafer contour line peripheral area which is larger than the wafer placing area. According to the invention, the wafer is fixed on the carrier 2 through the negative pressure adsorption structure, but the area of the wafer placing area close to the contour line of the wafer and the outer edge area are both set to be transparent areas 20, and after the light source 5 is arranged inside or at the lower part of the carrier 2, the transparent areas 20 are lightened in the using process of the equipment. After the wafer is absorbed, the wafer does not emit light, the transparent area 20 around the wafer transmits light, the outline of the wafer can be clearly and obviously shown, and the position of the wafer can be more conveniently identified. The positioning precision of the wafer can be improved by combining with the optical positioning mechanism, so that the precision of the recessive cutting equipment is improved. The area of the wafer placement area corresponds to the size of the wafer, and in the actual processing process, if the wafer is arranged in the wafer frame, the size of the wafer is the maximum size of the whole opaque wafer assembly including the wafer frame, and the contour line of the wafer is the outer contour line of the opaque wafer assembly including the wafer frame. Negative pressure adsorption gas circuit and pipeline. The peripheral region here refers to a region near the outer edge, and the transparent region 20 may include a certain region inside and outside the outline of the wafer placement region, so as to facilitate the outline recognition of the wafer or the opaque wafer assembly, for example, the transparent region 20 is configured in a ring shape or other shapes. The position and the size of the adsorption area of the wafer placing area are limited according to actual conditions. Generally, the wafer placing area includes the whole adsorption area, and a sealed air path can be formed below the whole wafer assembly. However, in the case that the surface of the wafer assembly has a transparent film or other transparent parts, the wafer placing area may be smaller than the suction area as long as the transparent film or other transparent parts can cover the suction area to form a sealing area.
The position on the carrying disc 23 closest to the light source 5 is a light source 5 receiving surface, the light source 5 receiving surface and the transparent area 20 of the carrying disc 23 are made of light-transmitting materials, and the light source 5 receiving surface and the transparent area 20 are located on the same side of the light source 5. The light source 5 may be placed in a cavity inside the boat 23. The carrier plate 23 may also be arranged under the entire carrier plate 23, in which case the region of the entire carrier plate 23 in the thickness direction corresponding to the transparent region 20 needs to be transparent to allow the light source 5 to pass through.
A light source 5 accommodating cavity for accommodating a luminous body is arranged in the carrying disc 23; the light source 5 accommodating cavity is located right below the transparent area 20, and the corresponding size of the light source 5 accommodating cavity is larger than that of the wafer placing area. Therefore, the areas close to the inner part and the outer part of the excircle contour line of the wafer placing area are transparent.
The carrier 2 comprises a base 26 with a hollow inner part and an opening at the upper end and a carrying disc 23 arranged at the opening end of the base 26, wherein a light source 5 accommodating cavity and a carrying disc mounting cavity 24 arranged at the upper end of the light source 5 accommodating cavity are arranged in the base 26; the carrier plate 23 is disposed in the carrier plate mounting cavity 24. The light source 5 accommodating cavity is determined according to the size and shape of the light source 5, and may be a superposition relationship in general, and the light source 5 accommodating cavity may also be larger than the size of the light source 5. The lower surface peripheral area of the carrier tray 23 is arranged on the bottom surface of the carrier tray mounting cavity 24. The carrying disc mounting cavity 24 radially limits the carrying disc 23. The carrying disc 23 and the carrying disc mounting cavity 24 are fixedly connected, and can be negative pressure adsorption and positioning pin limitation, and can also be fixedly arranged together in other modes, such as glue connection and the like.
Further, base 26 includes first base 21 and the fixed second base 22 that has that sets up on first base 21, light source 5 holds the chamber and sets up in first base 21 or set up respectively in first base 21 and second base 22 bottom, year dish installation cavity 24 sets up in second base 22 upper end, the shape of year dish installation cavity 24 is less than the shape that light source 5 held the chamber. Under this kind of structure, in order to put into light source 5 and take out light source 5 conveniently, base 26 adopts split type structure, reduces the processing degree of difficulty. The first base 21 and the second base 22 can be detachably connected through fixed connection modes such as bolts or pin shafts, preferably in sealing connection, and can also be pressed through negative pressure adsorption, so that the light source 5 can be conveniently detached and taken out later. In the case where the shape of the boat mounting chamber 24 is larger than the shape of the light source 5 accommodating chamber, the light source 5 can be directly put into the base 26 without providing the base 26 as a separate body.
A negative pressure cavity is defined by the base 26, the carrier 2 and the light source 5 arranged in the light source installation cavity 25, an air outlet communicated with the negative pressure cavity is formed in the carrier 2, the air outlet is communicated with a negative pressure source through a pipeline, and the negative pressure adsorption air path is communicated with the negative pressure cavity.
The negative pressure adsorption gas path comprises adsorption holes uniformly distributed on the carrier disc 23, and the lower part of each adsorption hole is communicated with the negative pressure cavity. This is the most common type of adsorption gas circuit, and the figures do not show the specific structure. The invention can also adopt any existing air path of the carrying disc 23, as long as the adsorption function can be realized.
The transparent material is quartz and the transparent region 20 is made of quartz. Inorganic and organic light-transmitting materials may be used in the transparent structure. Such as quartz, silicate glass, inorganic glass, organic high polymer, nano composite material, etc., the light-transmitting material only needs to meet the use requirements of the invention.
The light source 5 is arranged in the accommodating cavity of the light source 5, the accommodating cavity of the light source 5 is cylindrical, the light source 5 is a cylindrical LED lamp, and the shape of the light source 5 corresponds to that of the accommodating cavity of the light source 5. The light source 5 may be another lamp, and the light-transmitting material transmits light to the transparent region 20 as long as the light-emitting function is achieved.
The invention provides a gas circuit of a wafer adsorption carrier 2, as shown in fig. 1-14, which comprises a carrier 2, wherein a wafer placing area for placing a wafer is arranged on the upper surface of the carrier 2, an adsorption area is also arranged on the upper surface of the carrier 2, a negative pressure adsorption gas circuit is arranged on the carrier 2, one end of the negative pressure adsorption gas circuit is arranged in the adsorption area, the other end of the negative pressure adsorption gas circuit is communicated with a negative pressure source through a pipeline, the negative pressure adsorption gas circuit comprises an adsorption groove arranged on the upper surface of the adsorption area, the adsorption groove is communicated with a vertical negative pressure channel arranged on the carrier 2, and the vertical negative pressure channel is communicated with the negative pressure source through a pipeline. Wherein the negative pressure source may be a negative pressure pump. The negative pressure source is used for manufacturing a negative pressure environment by pumping away air in the negative pressure cavity and the adsorption groove communicated with the negative pressure cavity, so that the wafer is adsorbed. The existing wafer adsorption structure is not adsorbed by adopting the mode of arranging the adsorption groove on the upper surface of the wafer adsorption structure.
The adsorption tank includes a plurality of annular adsorption tanks 27 that the heart set up and connects the radial adsorption tank 28 of each annular adsorption tank 27, radial adsorption tank 28 intercommunication perpendicular negative pressure passageway. The radial suction grooves 28 do not necessarily have to be straight nor have to be along the radial direction as long as they can achieve the effect of interlocking the annular suction grooves 27.
Specifically, the adsorption tank further includes a separation tank 41 for dividing each annular adsorption tank 27 into a plurality of arc adsorption tanks arranged at intervals, and the track of the separation tank 41 is arc; two adjacent separation grooves 41 are symmetrically arranged. The shape of the adsorption groove can be designed as required, and the adsorption groove can be distributed on the upper surface of the carrier 2 to realize the negative pressure adsorption function.
The carrier 2 comprises a base 26 with a hollow inner part and an opening at the upper end and a carrier disc 23 arranged at the opening end of the base 26, a carrier disc installation cavity 24 is arranged in the base 26, and the carrier disc 23 is arranged in the carrier disc installation cavity 24; a gap is arranged between the outer circumferential surface of the carrier disc 23 and the inner circumferential surface of the carrier disc mounting cavity 24; the tail end of the radial adsorption groove 28 far away from the center of the carrying disc 23 extends to the outermost edge of the carrying disc 23, the inner wall of the carrying disc mounting cavity 24 is provided with the vertical negative pressure groove 29 corresponding to one end of the radial adsorption groove 28 far away from the circle center along the circumference, the vertical negative pressure channel comprises the vertical negative pressure groove 29, at least one vertical negative pressure groove 29 is communicated with the air guide hole 30, and the air guide hole 30 is arranged in the inner wall of the carrying disc mounting cavity 24; the other end of the air guide hole 30 is communicated with the negative pressure source through a pipeline. In this configuration, the outlet end of the air vent 30 may be disposed on the sidewall of the base 26 and directly connected to the negative pressure source through a pipe. Or another passageway may be used to provide a seat exit from a central location in the bottom of the base 26. The gap between the outer circumferential surface of the carrier disc 23 and the inner circumferential surface of the carrier disc installation cavity 24 forms an annular negative pressure cavity, so that the air flow of each vertical negative pressure groove 29 can flow into the air guide holes 30 through the annular negative pressure cavity under the condition that only one or a plurality of air guide holes 30 are arranged. The air holes 30 may be grooves or holes, and are determined according to actual requirements as long as the adsorption function is satisfied. The rest of the grooves and holes are also arranged according to the requirement in the invention.
Further, the carrier 2 with the light source 5 arranged inside can also be applied to the air path of the present invention, wherein the base 26 includes a first base 21 and a second base 22 fixedly arranged on the first base 21, the carrier mounting cavity 24 is arranged at the upper end of the second base 22, the light source mounting cavity 25 is arranged in the first base 21, the air guide holes 30 include a horizontal air guide hole 30 and a vertical air guide hole 30 which are arranged on the second base 22 and are mutually communicated, a first vertical air channel 31 communicated with the vertical air guide hole 30 is arranged on the annular side wall of the first base 21, a central through hole 32 connected with a negative pressure source through a pipeline and a base negative pressure transverse groove 33 with one end communicated with the lower end of the first vertical air channel 31 are arranged at the bottom of the first base 21, and the other end of the base transverse negative pressure groove 33 is communicated with the central through hole 32. The central through hole 32 is provided at the central region position, but may be provided at another position. The first vertical gas channel 31 may be a groove or a hole. The light source 5 is arranged in the light source installation cavity 25, and the light source 5 can be fixed in a sealing mode, so that a closed negative pressure space is formed in the light source installation cavity 25. The light source 5 may be a circular LED lamp or other light emitter. The first base 21 may be provided with a wiring hole for passing an electric wire. The vertical gas guide hole 30 and the first vertical gas channel 31 are correspondingly positioned to communicate with each other.
A second vertical gas channel 34 is further arranged on the annular side wall of the first base 21; the annular side wall is also provided with an annular gas groove 35 communicating the first vertical gas channel 31 and the second vertical gas channel 34. After the first and second bases 21 and 22 are mounted, the upper surface of the annular gas groove 35 is closed by the lower surface of the second base 22 when the first and second bases 21 and 22 are mated. The gas communication can be realized as long as the vertical gas guide hole 30 can correspond to any section from the first vertical gas channel 31 to the second vertical gas channel 34.
In the specific implementation: the light source 5 is placed into the light source installation cavity 25 and fixedly sealed. The second base 22 and the first base 21 are fixed, the stage plate 23 is mounted on the second base 22 and fixed, and the stage 2 is mounted. For a carrier with a central through hole 36, the mounting process can be completed by only one base 26, and after the light source 5 is mounted, the carrier plate 23 is fixed to the base 26. In the operating state, the light source 5 is turned on and the light causes said transparent area 20 to light up. When a wafer is placed on the carrier plate 23, a visual positioning mechanism such as a camera positions the wafer and the stage, and compares the positions with a predetermined position to calculate a deviation value, so as to correct the data of the subsequent movement track of the stage and improve the precision.
Further embodiments of the structure of the stage 2 as shown in fig. 9-14: the carrier 2 comprises a base 26 with a hollow inner part and an open upper end and a carrying disc 23 arranged on the open end of the base 26, a middle through hole 36 is arranged on the carrier 2, and the middle through hole 36 penetrates through the base 26 and the carrying disc 23; a first annular plate 37 is arranged on the base 26 around the middle through hole 36, a second annular plate 38 is also arranged on the base 26, and the first annular plate 37 is arranged in the area enclosed by the second annular plate 38; between the second annular plate 38 and the annular outer wall of the base 26 is the light source 5 accommodating cavity for accommodating the annular light source 5; a third vertical gas channel 39 is arranged on the inner wall of the first annular plate 37 along the circumference, an adsorption through hole 40 communicated with the third vertical gas channel 39 is arranged on the carrier disc 23, and the adsorption through hole 40 is arranged at one end, close to the center of the carrier disc 23, of the radial adsorption groove 28; the first ring plate, the second ring plate and the carrying disc 23 enclose a negative pressure cavity; and the bottom of the negative pressure cavity is provided with an air outlet 42 communicated with a negative pressure source through a pipeline. The first annular plate 37 may be higher in height than the second annular plate 38. The upper surface of the second annular plate 38 is in flush contact with the lower surface of the carrier disc 23. The upper surface of the first annular plate 37 is flush with the upper surface of the carrier disc 23, and the suction through hole 40 and the third vertical passage may be semicircular slots, which are combined to form an air passage with an approximately circular cross section.
The upper surface of the carrier 2 comprises a transparent area 20 made of a transparent material, and the transparent area 20 comprises a wafer contour line peripheral area which is larger than the wafer placing area; the position on the carrying disc 23 closest to the light source 5 is a light source 5 receiving surface, the light source 5 receiving surface and the transparent area 20 of the carrying disc 23 are made of light-transmitting materials, and the light source 5 receiving surface and the transparent area 20 are located on the same side of the light source 5. Other aspects of the transparent region 20 and the light source 5 and descriptions are not repeated.
As shown in fig. 1-8 and 18, a backlight positioning device of a laser stealth cutting device comprises a worktable 7, a carrier 2 which is arranged on the worktable 7 and can move and rotate on the worktable 7; a laser cutting mechanism 73 capable of moving up and down is arranged above the workbench 7; the method is characterized in that: the upper surface of the carrying platform 2 is provided with a wafer placing area for placing a wafer and an adsorption area for providing negative pressure to adsorb the wafer, and the peripheral area of the wafer contour line on the wafer placing area is a transparent area 20; a light source 5 is arranged in the carrier 2, and a transparent material is arranged between the light source 5 and the transparent area 20.
The workbench 7 is provided with two parallel supporting guide rails 70 and a cross beam 71 which is driven by a first driving mechanism to slide on the two supporting guide rails 70, and the cross beam 71 is provided with a longitudinal moving table 72 which is driven by a second driving mechanism and can slide along the length direction of the cross beam 71; the longitudinal moving table 72 is provided with the stage 2 which is driven by a third driving mechanism and can rotate, a mounting frame 75 is further arranged above the workbench 7, and the mounting frame 75 is provided with the laser cutting mechanism 73 which is driven by a fourth driving mechanism to move up and down; a visual positioning mechanism 74 is also provided on the mounting bracket 75. (the visual positioning mechanism 74 comprises a camera electrically connected with the control system, the visual positioning mechanism 74 takes a picture of the wafer on the carrying platform 2 through the camera to determine the position of the wafer on the carrying platform 2, and compares the position with the standard position of the control system to determine whether the wafer is accurately positioned, the first driving mechanism, the second driving mechanism and the fourth driving mechanism can be linear motors, and the third driving mechanism can be a high-precision turntable.
The structure of the carrier 2, which is described above and is transparent without the intermediate through hole 36, is adopted for the carrier 2, and the description thereof is not repeated, corresponding to the structure in fig. 1 to 8.
In the specific implementation: after the carrier 2 receives the wafer placed by the mechanical arm or the conveying mechanism, the visual positioning mechanism positions the wafer, transmits data to the control system and compares the data with a preset position, and the moving track of the carrier is accurately determined. Then, the laser cutting mechanism 73 is adjusted in position, and the stage 2 is moved horizontally and rotated to cut the wafer according to the program.
As shown in fig. 9-17, a wafer film coating stage 2 includes a film coating table 6, a stage 2 is disposed on the film coating table 6, a wafer placing area for placing a wafer is disposed on an upper surface of the stage 2, and an adsorption area is further disposed on the upper surface of the stage 2; the method is characterized in that: a lifting support 60 which is driven by a lifting driving mechanism 61 to stretch is arranged below the film covering workbench 6, a middle through hole 36 is arranged in a wafer placing area of the carrier 2, and the lifting support 60 penetrates through the middle through hole 36 of the carrier 2 when extending; a light source 5 is arranged in the carrying platform 2, a transparent area 20 made of a light-transmitting material is arranged in an area, above the light source 5, of the carrying platform 2, and the transparent area 20 contains and is larger than a wafer contour line peripheral area of a wafer placing area for placing a wafer.
In the specific implementation: when wafer materials need to be received, the lifting driving mechanism 61 is started, the lifting support 60 extends to exceed the upper surface of the wafer placing area, after the wafer conveyed by a mechanical arm or other equipment for conveying the wafer is received, the lifting driving mechanism 61 drives the wafer to descend, the wafer descends to the upper surface of the carrying platform 2, the lifting upright column descends to the lower part of the surface of the carrying platform 2, and the carrying platform 2 fixes the wafer through the adsorption area. The visual positioning system for positioning the wafer can be arranged on the corresponding mechanical arm or the existing visual positioning system can be directly adopted. In the prior art, a conveying mechanism for conveying the PE film is disposed above the film coating workbench 6, so that the PE film is located above the wafer and below the film pressing roller 65. After the wafer is placed on the stage 2, the film pressing cylinder 64 drives the film pressing bracket and the film pressing roller 65 to move downwards so that the PE film is pressed on the surface of the wafer, and then the horizontal driving mechanism drives the film pressing bracket and the film pressing roller 65 to move horizontally to cover the PE film on the upper surface of the whole wafer. Then, the procedures such as film cutting and the like are carried out.
The features of the embodiments described above may be arbitrarily combined, and the combination of the features is not contradictory, and should be considered as a range described in the present specification. The technical solution according to the present invention and equivalents or changes thereof, as well as several changes and modifications made therein, should also be considered as the protection scope of the present invention without departing from the overall concept of the present invention.
Claims (8)
1. The utility model provides a wafer adsorbs microscope carrier gas circuit, includes the microscope carrier, the microscope carrier upper surface sets up the wafer that is used for placing the wafer and places the district, and the microscope carrier upper surface still sets up the adsorption zone, set up negative pressure adsorption gas circuit on the microscope carrier, negative pressure adsorption gas circuit one end sets up in the adsorption zone, and the other end passes through pipeline intercommunication negative pressure source, its characterized in that: the negative pressure adsorption gas path comprises an adsorption groove arranged on the upper surface of the adsorption area, the adsorption groove is communicated with a vertical negative pressure channel arranged on the carrying platform, and the vertical negative pressure channel is communicated with a negative pressure source through a pipeline.
2. The wafer suction stage gas circuit as claimed in claim 1, wherein: the adsorption tank comprises a plurality of concentrically arranged annular adsorption tanks and radial adsorption tanks connected with the annular adsorption tanks, and the radial adsorption tanks are communicated with the vertical negative pressure channel.
3. The wafer suction stage gas circuit of claim 2, wherein: the carrying platform comprises a base which is hollow and provided with an opening at the upper end and a carrying disc arranged at the opening end of the base, wherein a carrying disc installation cavity is arranged in the base, and the carrying disc is arranged in the carrying disc installation cavity; a gap is formed between the outer circumferential surface of the loading disc and the inner circumferential surface of the loading disc installation cavity; the tail end of the radial adsorption groove, which is far away from the center of the carrier disc, extends to the most edge of the carrier disc, the inner wall of the carrier disc mounting cavity is provided with the vertical negative pressure groove corresponding to one end, which is far away from the circle center, of the radial adsorption groove along the circumference, the vertical negative pressure channel comprises the vertical negative pressure grooves, at least one vertical negative pressure groove is communicated with the air guide hole, and the air guide hole is arranged in the inner wall of the carrier disc mounting cavity; the other end of the air guide hole is communicated with the negative pressure source through a pipeline.
4. The wafer suction stage gas circuit as claimed in claim 3, wherein: the base includes first base and the fixed second base that sets up on first base, it sets up in the second base upper end to carry a set installation cavity, set up the light source installation cavity in the first base, the air guide hole is including setting up horizontal air guide hole and the vertical air guide hole of the intercommunication of each other on the second base, set up on the annular lateral wall of first base with the first vertical gas passage of vertical air guide hole intercommunication, first base bottom sets up the horizontal negative pressure groove of base that passes through the central through-hole of pipe connection and one end and first vertical gas passage lower extreme intercommunication with the negative pressure source, the horizontal negative pressure groove other end of base and central through-hole intercommunication.
5. The wafer adsorption carrier gas circuit as recited in claim 4, wherein: a second vertical gas channel is also arranged on the annular side wall of the first base; and the annular side wall is also provided with an annular gas groove communicated with the first vertical gas channel and the second vertical gas channel.
6. The wafer suction stage gas circuit of claim 2, wherein: the carrying platform comprises a base with a hollow interior and an opening at the upper end and a carrying disc arranged at the opening end of the base, wherein a middle through hole is arranged on the carrying platform and penetrates through the base and the carrying disc; a first annular plate is arranged on the base around the middle through hole, a second annular plate is also arranged on the base, and the first annular plate is arranged in an area defined by the second annular plate; the light source accommodating cavity for accommodating the annular light source is arranged between the second annular plate and the annular outer wall of the base; a third vertical gas channel is arranged on the inner wall of the first annular plate along the circumference, an adsorption through hole communicated with the third vertical gas channel is arranged on the carrier disc, and the adsorption through hole is arranged at one end, close to the center of the carrier disc, of the radial adsorption groove; the first ring plate, the second ring plate and the carrying disc are enclosed to form a negative pressure cavity; and the bottom of the negative pressure cavity is provided with an air outlet communicated with a negative pressure source through a pipeline.
7. The wafer chuck table gas circuit as claimed in any one of claims 2 to 6, wherein: the adsorption tank also comprises a separation tank for dividing each annular adsorption tank into a plurality of arc adsorption tanks arranged at intervals, and the track of the separation tank is arc; two adjacent separating grooves are symmetrically arranged.
8. The wafer suction stage gas circuit according to any one of claims 1 to 6, wherein: the upper surface of the carrying platform comprises a transparent area made of a light-transmitting material, and the transparent area comprises a wafer contour line peripheral area which is larger than the wafer placing area; the position, closest to the light source, on the carrying disc is a light source receiving surface, the light source receiving surface and the transparent area of the carrying disc are made of light-transmitting materials, and the light source receiving surface and the transparent area are located on the same side of the light source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211015086.6A CN115241118A (en) | 2022-08-23 | 2022-08-23 | Gas circuit of wafer adsorption platform deck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211015086.6A CN115241118A (en) | 2022-08-23 | 2022-08-23 | Gas circuit of wafer adsorption platform deck |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115241118A true CN115241118A (en) | 2022-10-25 |
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ID=83682224
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211015086.6A Pending CN115241118A (en) | 2022-08-23 | 2022-08-23 | Gas circuit of wafer adsorption platform deck |
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| Country | Link |
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| CN (1) | CN115241118A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116960034A (en) * | 2023-09-20 | 2023-10-27 | 天津中科晶禾电子科技有限责任公司 | Wafer pre-bonding holding system and wafer pre-bonding holding method |
-
2022
- 2022-08-23 CN CN202211015086.6A patent/CN115241118A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116960034A (en) * | 2023-09-20 | 2023-10-27 | 天津中科晶禾电子科技有限责任公司 | Wafer pre-bonding holding system and wafer pre-bonding holding method |
| CN116960034B (en) * | 2023-09-20 | 2023-11-28 | 天津中科晶禾电子科技有限责任公司 | Wafer pre-bonding holding system and wafer pre-bonding holding method |
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Country or region after: China Address after: 214400, 1st to 2nd floors, Building 3, Xiakewan Chuangzhi Park, No. 215 Qingtong Road, Qingyang Town, Jiangyin City, Wuxi City, Jiangsu Province Applicant after: Jiangsu General Semiconductor Co.,Ltd. Address before: No.a130-10, 1st floor, No.2 entrepreneurship center, No.96 Ruida Road, high tech Industrial Development Zone, Zhengzhou City, Henan Province, 450001 Applicant before: Henan general intelligent equipment Co.,Ltd. Country or region before: China |
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