CN115224211A - Organic light emitting diode and display panel - Google Patents

Organic light emitting diode and display panel Download PDF

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Publication number
CN115224211A
CN115224211A CN202210922505.8A CN202210922505A CN115224211A CN 115224211 A CN115224211 A CN 115224211A CN 202210922505 A CN202210922505 A CN 202210922505A CN 115224211 A CN115224211 A CN 115224211A
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light emitting
light
layer
electron
emitting device
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陈玉文
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/85Arrangements for extracting light from the devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels

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  • Electroluminescent Light Sources (AREA)

Abstract

The application discloses an organic light-emitting diode and a display panel, wherein the organic light-emitting diode comprises a first light-emitting device with a first light-emitting main body and a first color conversion layer, a second light-emitting device with a second light-emitting main body and a second color conversion layer, and a third light-emitting device with a third light-emitting main body, wherein the light-emitting colors of the first light-emitting device, the second light-emitting device and the third light-emitting device are different from each other and are arranged in a laminated manner; this application constitutes different luminescent device's luminous main part through the hole type material that utilizes electron withdrawing group and the electron type material of electron donating group, hole type material and electron type material form exciplex and give out light, the luminescent device that the stromatolite set up forms cascade energy transfer's mode, the effective regulation and control to exciton recombination zone and energy transfer has been realized for singlet state and triplet state exciton in the exciton recombination zone obtain effective utilization, energy loss among the exciton transfer process has been reduced, and then organic light emitting diode's luminous efficacy has been improved.

Description

Organic light emitting diode and display panel
Technical Field
The application relates to the technical field of display, in particular to an organic light emitting diode and a display panel.
Background
White Organic Light-Emitting Diodes (WOLEDs) have important application prospects in the fields of solid-state lighting and full-color display panels due to their unique characteristics of flexibility, light weight, self-emission and the like, and are known as next-generation display and lighting technologies.
The existing WOLEDs have low luminous efficiency, complex structure and poor stability, and have a certain distance in commercial application.
Therefore, a display panel is needed to solve the above technical problems.
Disclosure of Invention
The application provides a display panel to solve the technical problem that the current white organic light emitting diode has low luminous efficiency.
In order to solve the above-mentioned scheme, the technical scheme that this application provides is as follows:
the application provides an organic light emitting diode, it includes:
a first light emitting device including a first light emitting body and a first color conversion layer disposed on the first light emitting body;
a second light emitting device including a second light emitting body and a second color conversion layer disposed on the second light emitting body, the conversion colors of the first color conversion layer and the second color conversion layer being different; and
a third light emitting device including a third light emitting body, light emitting colors of the first, second, and third light emitting devices being different from each other, the first, second, and third light emitting devices being stacked;
wherein the first, second, and third light emitting bodies have the same emission color, and each of the first, second, and third light emitting bodies includes a hole type material having an electron withdrawing group and an electron type material having an electron donating group.
In the organic light emitting diode of the present application, a molar ratio of the hole type material to the electron type material in the first light emitting host, the second light emitting host, and the third light emitting host is 1:1.
in the organic light emitting diode of the present application, the hole type material includes at least one of mCBP, HAT-CN, F4-TCNQ, sbCl5 or FeCl3, and the electron type material includes at least one of PO-T2T, alkali metal or alkali metal salt.
In the organic light emitting diode of the present application, the first light emitting device is a red light emitting device, the second light emitting device is a green light emitting device, and the third light emitting device is a blue light emitting device;
the first, second and third light-emitting bodies emit blue light, the first color conversion layer is a red light conversion layer, and the second color conversion layer is a green light conversion layer.
In the organic light emitting diode of the present application, a thickness of the first light emitting body is greater than a thickness of the second light emitting body, and the thickness of the first light emitting body is less than a thickness of the third light emitting body.
In the organic light emitting diode of the present application, the first light emitting body has a thickness ranging from 3.5 nm to 4.5 nm, the second light emitting body has a thickness ranging from 2.5 nm to 3.5 nm, and the third light emitting body has a thickness ranging from 8.5 nm to 9.5 nm.
In the organic light emitting diode of the present application, the first color conversion layer includes a red phosphorescent material, and a thickness of the first color conversion layer ranges from 0.04 nm to 0.08 nm;
the second color conversion layer includes a green phosphorescent material, and a thickness of the second color conversion layer ranges from 0.02 nm to 0.06 nm.
In the organic light emitting diode of the present application, the first color conversion layer is in contact with the second light emitting body, and the second color conversion layer is in contact with the third light emitting body.
In the organic light emitting diode of the present application, the organic light emitting diode further includes:
an anode layer;
a hole injection layer disposed on the anode layer;
a hole transport layer disposed on the hole injection layer;
an electron blocking layer disposed on the hole transport layer;
an exciton blocking layer disposed on the electron blocking layer;
an electron transport layer disposed on the exciton blocking layer;
an electron injection layer disposed on the electron transport layer;
a cathode layer disposed on the electron transport layer;
wherein the first, second, and third light emitting devices are disposed between the exciton blocking layer and the electron transport layer.
The application also provides a display panel which comprises the organic light-emitting diode.
Has the beneficial effects that: this application constitutes different luminescent device's luminous main part through the hole type material that utilizes electron withdrawing group and the electron type material of electron donating group, hole type material and electron type material form exciplex and give out light, the luminescent device that the stromatolite set up forms cascade energy transfer's mode, the effective regulation and control to exciton recombination zone and energy transfer has been realized for singlet state and triplet state exciton in the exciton recombination zone obtain effective utilization, energy loss among the exciton transfer process has been reduced, and then organic light emitting diode's luminous efficacy has been improved.
Drawings
The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.
FIG. 1 is a schematic diagram of an organic light emitting device of the present application;
FIG. 2 is a simplified chemical structure diagram of mCBP of the present application;
FIG. 3 is a schematic chemical structure diagram of HAT-CN of the present application;
FIG. 4 is a simplified chemical structure diagram of F4-TCNQ of the present application;
FIG. 5 is a schematic diagram of the chemical structure of PO-T2T of the present application;
FIG. 6 is a simplified chemical structure diagram of RD071 of the present application;
FIG. 7 is a simplified chemical structure diagram of Ir (ppy) 2 (acac) of the present application;
FIG. 8 is a simplified diagram of the combination of mCBP and PO-T2T in the organic light emitting diode of the present application;
fig. 9 is a schematic diagram of exciton energy transfer and electroluminescence process in the organic light emitting diode of the present application.
Fig. 10 is a graph showing electroluminescence characteristics of an organic light emitting diode according to the present application;
fig. 11 is a graph showing characteristics of normalized power efficiency and current density of the organic light emitting diodes of comparative examples 1 to 3 of the present application;
FIG. 12 is a graph showing normalized external quantum efficiency and luminance characteristics of an organic light emitting diode in comparative example 2 of the present application;
FIG. 13 is a graph showing normalized external quantum efficiency and luminance characteristics of an organic light emitting diode in comparative example 3 of the present application;
fig. 14 is a process flow diagram of an organic light emitting diode according to the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It should be apparent that the described embodiments are only a few embodiments of the present application, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Referring to fig. 1 to 6, the present application provides an organic light emitting diode 100, which includes a first light emitting device 110, a second light emitting device 120, and a third light emitting device 130, wherein the first light emitting device 110, the second light emitting device 120, and the third light emitting device 130 have different light emitting colors, and the first light emitting device 110, the second light emitting device 120, and the third light emitting device 130 are stacked.
In this embodiment, the first light emitting device 110 may include a first light emitting body 111 and a first color conversion layer 112 disposed on the first light emitting body 111, the second light emitting device 120 may include a second light emitting body 121 and a second color conversion layer 122 disposed on the second light emitting body 121, conversion colors of the first color conversion layer 112 and the second color conversion layer 122 are different, and the third light emitting device 130 may include a third light emitting body 131.
In this embodiment, the first, second, and third light emitting bodies 111, 121, and 131 emit light of the same color, and each of the first, second, and third light emitting bodies 111, 121, and 131 includes a hole type material having an electron withdrawing group and an electron type material having an electron donating group.
This application constitutes different luminescent device's luminous main part through the hole type material that utilizes electron withdrawing group and the electron type material of electron donating group, hole type material and electron type material form exciplex and give out light, the luminescent device that the stromatolite set up forms cascade energy transfer's mode, the effective regulation and control to exciton recombination region and energy transfer has been realized for singlet state and triplet state exciton in the exciton recombination region obtain effective utilization, energy loss among the exciton transfer process has been reduced, and then organic light emitting diode 100's luminous efficacy has been improved.
The technical solution of the present application will now be described with reference to specific embodiments.
Referring to fig. 1, the organic light emitting diode 100 may include an anode layer 101, a hole injection layer 102, a hole transport layer 103, an electron blocking layer 104, an exciton blocking layer 105, an emitting layer 200, an electron transport layer 106, an electron injection layer 107, and a cathode layer 108.
In this embodiment, the material of the anode layer 101 may be a conductive material such as indium tin oxide.
In this embodiment, the hole injection layer 102 is disposed on the anode layer 101, the material of the hole injection layer 102 may include at least one of mCBP (see fig. 2), HAT-CN (see fig. 3), F4-TCNQ (see fig. 4), sbCl5 (antimony pentachloride), feCl3 (ferric chloride), and the like, and the thickness of the hole injection layer 102 may range from 10 nm to 20 nm.
In this embodiment, the hole transport layer 103 is disposed on the hole injection layer 102, the material of the hole transport layer 103 may be TAPC, and the thickness of the hole transport layer 103 may range from 55 nm to 65 nm.
In this embodiment, the electron blocking layer 104 is disposed on the hole transport layer 103, the material of the electron blocking layer 104 may be TCTA, etc., the thickness of the electron blocking layer 104 may range from 3 nm to 7 nm, and the electron blocking layer 104 is mainly used for blocking electrons generated by the cathode layer 108 from passing downward.
In this embodiment, the exciton blocking layer 105 is disposed on the electron blocking layer 104, the material of the exciton blocking layer 105 may be mCBP or the like, the range of the exciton blocking layer 105 may be 3 nm to 7 nm, and the exciton blocking layer 105 is mainly used for blocking excitons generated in the light emitting layer 200 from being transferred downward.
In this embodiment, the light emitting layer 200 is disposed on the exciton blocking layer 105.
In the embodiment, the electron transport layer 106 is disposed on the light emitting layer 200, the material of the electron transport layer 106 may be at least one of PO-T2T (see fig. 5), alkali metal or alkali metal salt, and the thickness of the electron transport layer 106 may range from 40 nm to 50 nm.
In this embodiment, the electron injection layer 107 is disposed on the electron transport layer 106, the material of the electron injection layer 107 may be lithium fluoride, and the thickness of the electron injection layer 107 may range from 1 nm to 1.5 nm.
In this embodiment, the cathode layer 108 is disposed on the electron transport layer 106, the material of the cathode layer 108 may be a transparent metal with good electrical conductivity, such as aluminum, and the thickness of the cathode layer 108 may range from 110 nm to 130 nm.
In this embodiment, the light emitting layer 200 may include the first light emitting device 110, the second light emitting device 120, and the third light emitting device 130 disposed in a stack, the first light emitting device 110, the second light emitting device 120, and the third light emitting device 130 being disposed between the exciton blocking layer 105 and the electron transport layer 106.
In the organic light emitting diode 100 of the present application, the first light emitting device 110, the second light emitting device 120, and the third light emitting device 130 may be different ones from each other among a red light emitting device, a green light emitting device, and a red light emitting device. For example, the first light emitting device 110 may be a red light emitting device, the second light emitting device 120 may be a green light emitting device, and the third light emitting device 130 may be a blue light emitting device.
In this embodiment, the light emitting colors of the first light emitting host 111, the second light emitting host 121, and the third light emitting host 131 are all blue light, for example, an exciplex formed by the hole type material and the electron type material in the first light emitting host 111, the second light emitting host 121, and the third light emitting host 131 can emit blue fluorescence after being combined.
In the present embodiment, the molar ratio of the hole type material to the electron type material in the first, second, and third light emitting hosts 111, 121, and 131 is 1:1.
in this embodiment, the hole-type material may include at least one of mCBP, HAT-CN, F4-TCNQ, sbCl5 (antimony pentachloride) or FeCl3 (ferric chloride), and the electron-type material may include at least one of PO-T2T, an alkali metal or an alkali metal salt.
In this embodiment, the hole-type material may serve as a donor of the exciplex, the electron-type material may serve as an acceptor of the exciplex, and the combination of the hole and the electron emits blue fluorescence in the light-emitting host.
In this embodiment, the first color conversion layer 112 is a red light conversion layer, and the second color conversion layer 122 is a green light conversion layer. Since the light-emitting subject is blue fluorescent light, the present embodiment converts corresponding blue light into red light and green light using a red light conversion layer and a green light conversion layer, respectively, to form white light by superposition of the three colors of red light, green light, and blue light.
In this embodiment, the material of the red light conversion layer may be a red phosphorescent material, such as RD071 (see fig. 6), and the thickness of the red light conversion layer may range from 0.04 to 0.08 nm; the material of the green conversion layer may be a green phosphorescent material, for example, ir (ppy) 2 (acac) (see fig. 7), and the film thickness of the light filtering conversion layer may range from 0.02 to 0.06 nm.
In the organic light emitting diode 100 of the present application, the thickness of the first light emitting body 111 may be greater than that of the second light emitting body 121, and the thickness of the first light emitting body 111 may be less than that of the third light emitting body 131. The first light emitting body 111 and the first conversion layer may be combined to emit red light, the second light emitting body 121 and the second conversion layer may be combined to emit green light, and the third light emitting body 131 emits blue light, and since the three colors of red, green and blue have different emission intensities, the green light has the largest emission intensity, the blue light has the most toxic emission intensity, and the red light has a central emission intensity, the thickness of the second light emitting body 121 as the green light emitting body is the smallest, the thickness of the third light emitting body 131 as the blue light emitting body is the largest, and the thickness of the first light emitting body 111 as the red light emitting body is the central, in order to balance the emission intensities of the three colors of red, green and blue.
In the present embodiment, the thickness of the first light emitting body 111 may range from 3.5 nm to 4.5 nm, the thickness of the second light emitting body 121 may range from 2.5 nm to 3.5 nm, and the thickness of the third light emitting body 131 may range from 8.5 nm to 9.5 nm.
In this embodiment, the first light emitting device 110, the second light emitting device 120 and the third light emitting device 130 are stacked, the second light emitting device 120 is disposed on the first light emitting device 110, and the third light emitting device 130 is disposed on the second light emitting device 120, that is, the first color conversion layer 112 may contact the second light emitting body 121, and the second color conversion layer 122 may contact the third light emitting body 131.
Referring to fig. 8 and 9, taking the hole transporting material mCBP and the electron transporting material PO-T2T as an example for illustration, the exciton recombination zone is located in the exciplex formed by mCBP and PO-T2T molecules, and generates singlet excitons and triplet excitons, wherein the singlet exciton ratio X is larger than X S At 25%, the ratio of triplet excitons X T Is 75%;
singlet excitons in the exciton recombination zone can directly emit blue light from the exciplex, and can also emit phosphorescence by energy transfer from the singlet state of the excited complex to the phosphor; secondly, the triplet excitons in the exciton recombination zone can emit green light by transferring energy to the green phosphorescent material and can also emit red light by transferring energy to the red phosphorescent material; finally, triplet excitons may also be converted to singlet excitons by reverse gap cross-over to emit blue light.
In the present embodiment, the cascade energy transfer mode formed by the stacked structure of the red, green and blue light emitting devices can make all excitons effectively utilized in the emission region to generate white light, thereby eliminating the reverse energy transfer from the phosphor to the blue phosphor in the conventional mixed WOLEDs and further improving the light emitting performance of the device.
Referring to fig. 10, fig. 10 is a graph illustrating electroluminescent characteristics of the organic light emitting diode 100 according to the present application. In the graphs (a), (b), (c) and (d) of fig. 10, the minimum value of the turn-on voltage of the organic light emitting diode 100 of the present application may be 2.4 volts, and the maximum current efficiency may be 50.6cdA -1 The external quantum efficiency may be 21.2%, and the power efficiency may be 66.2lmW -1
In the present embodiment, the luminance value is 100cd/m 2 The maximum current efficiency of the organic light emitting diode 100 of the present application is 45.2cdA -1 The external quantum efficiency is 18.3%, and the power efficiency is 50.9lmW -1 (ii) a At a luminance value of 100cd/m 2 The maximum current efficiency of the organic light emitting diode 100 of the present application is 35.5cdA -1 External quantum efficiency of 15.8% and power efficiency of 34.6lmW -1
In addition, the luminance value is from 500cd/m 2 To 10000cd/m 2 In the variation process, the organic light emitting diode 100 of the present application has a stable electroluminescence spectrum, and the color rendering index CRI is greater than 86.
The performance of the organic light emitting diode 100 of the present application is compared in three sets of comparative examples.
The parameters related to comparative example 1 in fig. 10 and 11 can be found in the above description of the present application, fig. 12 is a normalized external quantum efficiency and luminance characteristic curve of the organic light emitting diode 100 in comparative example 2 of the present application, and fig. 13 is a normalized external quantum efficiency and luminance characteristic curve of the organic light emitting diode 100 in comparative example 3 of the present application.
The three comparative examples were identical in structure except that:
the red conversion layer of comparative example 2 is located 2.5 nm to 3.5 nm from the interface of the exciton blocking layer 105 and the first luminescent host 111, and the red conversion layer of comparative example 3 is located 4.5 nm to 5.5 nm from the interface of the exciton blocking layer 105 and the first luminescent host 111.
As can be seen from the graphs of fig. 10 to 13, the maximum external quantum efficiencies of the devices of comparative example 2 and comparative example 3 were both above 21.0%, exhibiting higher device efficiencies; meanwhile, the comparative examples 1 to 3 have better spectral stability and color stability, and the color rendering indexes CRI under different brightness are all more than 85; the difference between comparative examples 1 to 3 is that the roll-off efficiency of the organic light emitting diode 100 is different, and the roll-off efficiency of comparative example 1 is optimal, so that the position of the red conversion layer in the exciton recombination zone has a certain effect on the roll-off efficiency of the whole organic light emitting diode.
The application emits blue light by utilizing singlet excitons formed in a blue light-emitting host, or transmits the blue light to a green phosphorescent material and a red phosphorescent material in an energy transmission mode to emit corresponding green light and red light; meanwhile, the triplet excitons are used for phosphorescence emission or energy is transferred to the singlet excitons through reverse intersystem crossing, so that the exciton utilization rate is 100% finally, the triplet excitons enable quenching of the triplet excitons of the device under high brightness to be inhibited, effective regulation and control of an exciton recombination region and energy transfer are realized, energy loss in the exciton transfer process is reduced, and the organic light emitting diode 100 has the characteristics of low driving voltage, high efficiency and low rolling efficiency, and has the advantages of high color rendering index, good spectral stability and color stability.
The present application further provides a method for manufacturing an organic light emitting diode 100, please refer to fig. 14, which includes:
s10, forming an indium tin oxide pattern layer on the substrate glass to form an anode layer 101;
s20, carrying out ultrasonic cleaning on the substrate with the anode layer 101 for 60-90 minutes, cleaning the substrate with deionized water, and drying the substrate with nitrogen;
s30, baking the substrate with the anode layer 101 in a vacuum oven for 30-60 minutes at 120 ℃, and treating the substrate with ultraviolet ozone plasma for 5-7 minutes;
s40, transferring the substrate with the anode layer 101 into a vacuum coating system with the vacuum degree of 1 Pa to 5 × 10 -5 Handkerchief;
s50, a hole injection layer 102, a hole transport layer 103, an electron blocking layer 104, an exciton blocking layer 105, a light emitting layer 200, an electron transport layer 106, an electron injection layer 107, and a cathode layer 108 are sequentially formed on the substrate on which the anode layer 101 is formed, so as to obtain the white light emitting organic light emitting diode 100 of the present application.
In the present embodiment, the evaporation rate of the organic material may be 0.03 nm/sec to 0.1 nm/sec, the evaporation rates of the red and green conversion layers may be 0.001 nm/sec to 0.01 nm/sec, and the evaporation rate of the cathode layer 108 may be 0.5 nm/sec to 1 nm/sec.
The application also provides a display panel, the display panel includes an array substrate, the organic light emitting diode arranged on the array substrate, and an encapsulation layer arranged on the organic light emitting diode.
The application discloses an organic light-emitting diode and a display panel, wherein the organic light-emitting diode comprises a first light-emitting device with a first light-emitting main body and a first color conversion layer, a second light-emitting device with a second light-emitting main body and a second color conversion layer and a third light-emitting device with a third light-emitting main body, wherein the light-emitting colors of the first light-emitting device, the second light-emitting device and the third light-emitting device are different from each other and are arranged in a laminated manner; this application forms the luminous main part of different luminescent device through the hole type material that utilizes electron withdrawing group and the electron type material of electron donating group, hole type material and electron type material form the exciplex and give out light, the luminescent device that the stromatolite set up forms the mode of cascade energy transfer, realized the effective regulation and control to exciton recombination region and energy transfer for singlet state and triplet state exciton in the exciton recombination region obtain effective utilization, energy loss in the exciton transfer process has been reduced, and then improved organic light emitting diode's luminous efficacy.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The organic light emitting diode and the display panel provided by the embodiment of the present application are described in detail above, and a specific example is applied in the description to explain the principle and the implementation of the present application, and the description of the embodiment is only used to help understanding the technical solution and the core idea of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.

Claims (10)

1. An organic light emitting diode, comprising:
the first light-emitting device comprises a first light-emitting main body and a first color conversion layer arranged on the first light-emitting main body;
a second light emitting device including a second light emitting body and a second color conversion layer disposed on the second light emitting body, the conversion colors of the first color conversion layer and the second color conversion layer being different; and
a third light emitting device including a third light emitting body, light emitting colors of the first, second, and third light emitting devices being different from each other, the first, second, and third light emitting devices being stacked;
wherein the first, second and third light emitting bodies have the same emission color, and each of the first, second and third light emitting bodies includes a hole type material having an electron withdrawing group and an electron type material having an electron donating group.
2. The organic light-emitting diode of claim 1, wherein the molar ratio of the hole-type material to the electron-type material in the first, second, and third light-emitting hosts is 1:1.
3. the organic light-emitting diode of claim 2, wherein the hole-type material comprises at least one of mCBP, HAT-CN, F4-TCNQ, sbCl5, or FeCl3, and the electron-type material comprises at least one of PO-T2T, an alkali metal, or an alkali metal salt.
4. The organic light-emitting diode according to claim 1, wherein the first light-emitting device is a red light-emitting device, the second light-emitting device is a green light-emitting device, and the third light-emitting device is a blue light-emitting device;
the first, second and third light-emitting bodies emit blue light, the first color conversion layer is a red light conversion layer, and the second color conversion layer is a green light conversion layer.
5. The OLED of claim 4, wherein the first light emitting body has a thickness greater than a thickness of the second light emitting body, and wherein the first light emitting body has a thickness less than a thickness of the third light emitting body.
6. The OLED as claimed in claim 5, wherein the first light emitting body has a thickness ranging from 3.5 nm to 4.5 nm, the second light emitting body has a thickness ranging from 2.5 nm to 3.5 nm, and the third light emitting body has a thickness ranging from 8.5 nm to 9.5 nm.
7. The OLED of claim 4, wherein the first color conversion layer comprises a red phosphorescent material, and the first color conversion layer has a thickness in a range of 0.04 nm to 0.08 nm;
the second color conversion layer includes a green phosphorescent material, and a thickness of the second color conversion layer ranges from 0.02 nm to 0.06 nm.
8. The organic light emitting diode of claim 1, wherein the first color conversion layer is in contact with the second light emitting body, and the second color conversion layer is in contact with the third light emitting body.
9. The organic light-emitting diode of claim 8, further comprising:
an anode layer;
a hole injection layer disposed on the anode layer;
a hole transport layer disposed on the hole injection layer;
an electron blocking layer disposed on the hole transport layer;
an exciton blocking layer disposed on the electron blocking layer;
an electron transport layer disposed on the exciton blocking layer;
an electron injection layer disposed on the electron transport layer;
a cathode layer disposed on the electron transport layer;
wherein the first, second, and third light emitting devices are disposed between the exciton blocking layer and the electron transport layer.
10. A display panel comprising the organic light emitting diode according to any one of claims 1 to 9.
CN202210922505.8A 2022-08-02 2022-08-02 Organic light emitting diode and display panel Pending CN115224211A (en)

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