CN115224147A - Light trapping structure suitable for InAs/GaAsSb quantum dot solar cell and preparation method thereof - Google Patents
Light trapping structure suitable for InAs/GaAsSb quantum dot solar cell and preparation method thereof Download PDFInfo
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- CN115224147A CN115224147A CN202110427659.5A CN202110427659A CN115224147A CN 115224147 A CN115224147 A CN 115224147A CN 202110427659 A CN202110427659 A CN 202110427659A CN 115224147 A CN115224147 A CN 115224147A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
Abstract
The present disclosure provides a light trapping structure suitable for an InAs/GaAsSb quantum dot solar cell, the light trapping structure comprising: a plurality of light trapping units; the light trapping unit includes: a quadrangular frustum and a plurality of nanowires; the nanowires are positioned on the upper surface of the quadrangular frustum; the nanowires are in a bent state, and the bending angle of one end, contacting with the upper surface of the quadrangular frustum, of each nanowire is smaller than that of one end, far away from the upper surface of the quadrangular frustum. The light trapping structure disclosed by the invention does not need a complex semiconductor process during preparation, and does not need to contact a very dangerous chemical reagent; the light trapping structure is mainly suitable for InAs/GaAsSb quantum dot solar cells and most III-V group solar cells.
Description
Technical Field
The invention relates to the field of quantum dot solar cells, in particular to a light trapping structure suitable for InAs/GaAsSb quantum dot solar cells and a preparation method thereof.
Background
The quantum dot solar cell is a research hotspot internationally in recent years, a plurality of quantum dot layers which are closely arranged are prepared in a bulk material through an epitaxial process, and the excellent properties of the quantum dots also improve the high temperature resistance and radiation resistance of the solar cell, so that the solar cell can be used as a ground power supply, even a space power supply and other extreme environment resistant power supplies. Experiments prove that the InAs/GaAsSb quantum dot layer introduced into the III-V group solar cell structure can effectively broaden the absorption spectrum of the unijunction III-V group solar cell. The absorption waveband of a typical III-V material GaAs is 300nm-870nm, and the addition of InAs quantum dots can widen the absorption waveband of the battery to more than 1300 nm. At present, most of III-V solar cell structures including quantum dot solar cells adopt TiO (TiO) 2 、SiO 2 Antireflection films are used to reduce the surface reflectivity, but these antireflection films are only suitable for antireflection in a specific wavelength band and a specific incident angle, and are not suitable for wide-band and full-angle incidence.
BRIEF SUMMARY OF THE PRESENT DISCLOSURE
Technical problem to be solved
In view of the above-mentioned shortcomings of the prior art, a primary object of the present disclosure is to provide a light trapping structure suitable for InAs/GaAsSb quantum dot solar cells and a method for fabricating the same, so as to at least partially solve at least one of the above-mentioned technical problems.
(II) technical scheme
In order to achieve the above object, the present disclosure proposes a light trapping structure suitable for an InAs/GaAsSb quantum dot solar cell, the structure comprising:
a plurality of light trapping units;
the light trapping unit includes: a quadrangular frustum and a plurality of nanowires;
one end of each nanowire is in contact with the upper surface of the quadrangular frustum;
the nanowires are in a bending state;
the bending angle of one end of each nanowire, which is in contact with the upper surface of the quadrangular frustum, is smaller than that of one end of each nanowire, which is far away from the upper surface of the quadrangular frustum.
Preferably, the material of the pyramid frustum includes gallium arsenide;
the material of the nanowire comprises gallium arsenide.
Preferably, a bending angle of one end of each of the nanowires contacting with the upper surface of the pyramid frustum is within a preset range;
the bending angle of one end of each nanowire far away from the upper surface of the quadrangular frustum pyramid is within a preset range;
the bending states of the plurality of nanowires are at least partially different.
Preferably, the nanowires completely cover the upper surface of the truncated pyramid.
Preferably, the ratio of the heights of the nanowires to the height of the pyramid frustum satisfies a first predetermined ratio condition.
Preferably, the light trapping structure is used for reducing the reflectivity of a visible light wave band;
the light trapping structure is also used for reducing the reflectivity of a near infrared band with the wavelength below 1500 nm.
Preferably, the average value of the reflectivity of the light trapping structure to the wave band with the wavelength in the range of 300nm-1300nm is less than 5%.
On the other hand, the present disclosure provides a method for manufacturing a light trapping structure suitable for an InAs/GaAsSb quantum dot solar cell, for manufacturing the light trapping structure suitable for an InAs/GaAsSb quantum dot solar cell, including:
coating photoresist on the surface of a solar cell to be prepared with a light trapping structure;
exposing and developing the surface of the light trapping structure to be prepared after the photoresist is coated;
placing the exposed and developed solar cell in a preset etching environment;
injecting a preset etching gas into the preset etching environment;
etching the solar cell by adopting an inductive coupling plasma method;
and taking out the solar cell after the preset etching time is continued, and completing the preparation of the light trapping structure.
Preferably, the preset etching environment includes: the etching temperature is between 10 and 12 degrees;
the etch pressure is between 4-5 mtorr.
Preferably, the preset etching gas includes: cl 2 、BCl 3 、O 2 And A r ；
Wherein, O 2 The flow rate of (b) is 20-30% of the total preset etching gas flow rate.
(III) advantageous effects
(1) The light trapping structure disclosed by the invention has extremely low surface reflectivity, and can couple more light in a wide band range into an absorption layer of a solar cell;
(2) The light trapping structure disclosed by the invention does not need a complex semiconductor process during preparation, and does not need to contact a very dangerous chemical reagent;
(3) The light trapping structure can be combined with various back reflector structures, so that the efficiency of the solar cell is further optimized;
(4) The light trapping structure is mainly suitable for InAs/GaAsSb quantum dot solar cells and most III-V group solar cells.
Drawings
In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the drawings used in the embodiments or the description in the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic view of a light trapping structure suitable for an InAs/GaAsSb quantum dot solar cell according to an embodiment of the present disclosure;
fig. 2 is a simulation result of the reflectivity of the light trapping structure suitable for the InAs/GaAsSb quantum dot solar cell according to an embodiment of the present disclosure;
fig. 3 is a schematic view of a process for manufacturing a light trapping structure suitable for an InAs/GaAsSb quantum dot solar cell according to an embodiment of the present disclosure;
fig. 4 is a schematic structural diagram of a solar cell including a light trapping structure according to an embodiment of the present disclosure;
fig. 5 is a schematic diagram illustrating comparison between simulation results of absorption coefficients of a GaAs solar cell with a light trapping structure and simulation results of a GaAs solar cell without a light trapping structure according to an embodiment of the present disclosure;
fig. 6 is a schematic diagram illustrating comparison between simulation results of absorption coefficients of an InAs/GaAsSb quantum dot solar cell with a light trapping structure and simulation results of an InAs/GaAsSb quantum dot solar cell without a light trapping structure according to an embodiment of the present disclosure.
Description of the reference numerals
100 light trapping structure 101 light trapping unit 1011 quadrangular frustum
1012 nanowire 200 passivation layer 300 window layer
400 emitter 500 intermediate quantum dot layer 600 base
1000n type contact electrode 1100p type contact electrode
Detailed Description
For the purposes of promoting an understanding of the objects, features, aspects and advantages of the disclosure, reference will now be made in detail to the present disclosure with reference to the following detailed description taken in conjunction with the accompanying drawings. All other embodiments, which can be derived by a person skilled in the art from the embodiments disclosed herein without making any creative effort, shall fall within the scope of protection of the present disclosure.
Fig. 1 is a schematic view of a light trapping structure suitable for an InAs/GaAsSb quantum dot solar cell according to an embodiment of the present disclosure, as shown in fig. 1, the light trapping structure includes: a light trapping unit 110.
The light trapping unit 110 includes: a quadrangular frustum and a plurality of nanowires; one end of each nanowire is in contact with the upper surface of the quadrangular frustum; the nanowires are in a bending state; the bending angle of one end of each nanowire, which is in contact with the upper surface of the quadrangular frustum, is smaller than that of one end of each nanowire, which is far away from the upper surface of the quadrangular frustum.
In an embodiment of the present disclosure, the material of the pyramid frustum includes gallium arsenide; the material of the nanowire comprises gallium arsenide.
In this embodiment, each light trapping unit includes a gallium arsenide pyramid platform and a plurality of curved gallium arsenide nanowires, and the plurality of light trapping units are densely arranged to form a light trapping structure.
In an embodiment of the present disclosure, a bending angle of an end of each of the nanowires contacting the upper surface of the frustum pyramid is smaller than a bending angle of an end of each of the nanowires away from the upper surface of the frustum pyramid; the bending angle of one end of each nanowire, which is in contact with the upper surface of the quadrangular frustum pyramid, is within a preset range; the bending angle of one end of each nanowire far away from the upper surface of the quadrangular frustum pyramid is within a preset range; the bending states of the plurality of nanowires are at least partially different.
In this embodiment, each nanowire is in a bent state, a bending angle of a portion of the same nanowire close to the upper surface of the frustum pyramid is smaller, and a bending angle of a portion of the same nanowire far from the upper surface of the frustum pyramid is larger, that is, the bending angle of the nanowire increases with increasing distance from the upper surface of the frustum pyramid, but the bending angle of the portion close to the upper surface of the frustum pyramid or the bending angle of the portion far from the upper surface of the frustum pyramid is within a preset range, and in this embodiment, the preset range is 0 to 45 °. And the bending states of the plurality of nanowires on the upper surface of the quadrangular pyramid frustum are at least partially different.
In an embodiment of the present disclosure, the nanowires completely cover the upper surface of the pyramid frustum.
In this embodiment, the upper surface of the quadrangular pyramid frustum is completely covered with the nanowire.
In an embodiment of the disclosure, a ratio of the heights of the nanowires to the height of the pyramid frustum satisfies a first predetermined ratio condition.
In this embodiment, the total height of the light trapping unit is less than 1.5um, and the ratio of the height of the nanowire to the height of the quadrangular frustum meets a first preset ratio condition, which is: the ratio of the height of the nanowire to the height of the quadrangular frustum is 2-3.
In an embodiment of the present disclosure, the light trapping structure is used to reduce the reflectivity of the visible light band; the light trapping structure is also used for reducing the reflectivity of a near infrared band with the wavelength below 1500 nm; the average value of the reflectivity of the light trapping structure to the wave band with the wavelength ranging from 300nm to 1300nm is less than 5%.
Fig. 2 is a simulation result of the reflectivity of the light trapping structure suitable for the InAs/GaAsSb quantum dot solar cell according to an embodiment of the present disclosure, where a curve 1 is a reflectivity curve of a non-light trapping structure, and a curve 2 is a reflectivity curve of the light trapping structure. As shown in FIG. 2, the reflectivity of the light trapping structure is significantly lower than that of the non-light trapping structure, so the reflectivity can be effectively reduced by the present disclosure.
Fig. 3 is a schematic flow chart of a method for manufacturing a light trapping structure suitable for an InAs/GaAsSb quantum dot solar cell according to an embodiment of the present disclosure, and as shown in fig. 3, the method includes:
s301, coating photoresist on the surface of the solar cell to be prepared with the light trapping structure;
in one embodiment of the present disclosure, the light trapping structure is fabricated on the solar cell by using a single-step inductively coupled plasma method, and in this embodiment, the power source power of the inductively coupled plasma is between 700W and 1700W. And photoresist is coated on the surface of the solar cell to be provided with the light trapping structure, so that the part of the surface which does not need to be provided with the light trapping structure can be protected.
S302, exposing and developing the surface of the light trapping structure to be prepared after the photoresist is coated;
in an embodiment of the disclosure, the surface of the light trapping structure to be prepared after the photoresist is coated is exposed and developed, so that a part of the light trapping structure to be prepared can be exposed, and the light trapping structure can be conveniently prepared in the subsequent steps. The remaining photoresist also needs to be cleaned after exposure and development and deposition of the passivation film.
S303, placing the exposed and developed solar cell into a preset etching environment;
in one embodiment of the disclosure, an etching chamber for preparing a light trapping structure is prepared, the temperature of the etching chamber is set to be between 10 and 12 degrees, and the pressure of the etching chamber is ensured to be between 4 and 5 mTorr. The etching environment meets the temperature condition and the pressure condition of etching the light trapping structure by an inductively coupled plasma method.
S304, injecting a preset etching gas into the preset etching environment;
in an embodiment of the present disclosure, the presetting of the etching gas includes: cl 2 、BCl 3 、O 2 And A r Wherein O is 2 The flow of the etching gas accounts for 20% -30% of the total flow of the preset etching gas, and the gas condition for etching the light trapping structure by an inductively coupled plasma method is met.
S305, etching the solar cell by adopting an inductive coupling plasma method;
and S306, taking out the solar cell after the preset etching time is continued, and completing the preparation of the light trapping structure.
In an embodiment of the present disclosure, the solar cell is taken out after the solar cell reacts for a predetermined etching time in a predetermined etching environment, and in this embodiment, the predetermined etching time is not more than 3 minutes.
In an embodiment of the disclosure, when the solar cell is an InAs/GaAsSb quantum dot solar cell, the method for preparing the light trapping structure includes:
(1) Epitaxially growing a body of a solar cell on an insulating-semi-insulating GaAs substrate;
in this embodiment, the main body of the solar cell includes, from bottom to top, an n-type GaAs contact layer, an n-type GaAs base, an intermediate quantum dot layer, a p-type GaAs emitter, a p-type AlGaAs window layer, and a p-type GaAs cap layer. The size of the solar cell chip is 5mm multiplied by 5mm.
(2) Cleaning the front side and the back side of the solar cell by using acetone, ethanol and deionized water in sequence;
in this example, the glass is first boiled and cleaned with an acetone solution, then boiled and cleaned with an ethanol solution, then ultrasonically cleaned with deionized water, and finally blown dry with a nitrogen gun.
(3) After cleaning, putting the solar cell in a hot plate or an oven to dry the moisture on the surface;
in this embodiment, the moisture on the surface of the solar cell is dried, so as to increase the adhesiveness of the photoresist.
(4) Spin-coating a layer of positive photoresist on the front side of the solar cell after drying;
in this embodiment, a positive photoresist is used as a mask.
(5) Exposing and developing the solar cell which is coated with the photoresist positively;
in this embodiment, the thickness of the photoresist is equal to the thickness of the epitaxial layer of the solar cell, so that the main body of the solar cell is prevented from being etched by mistake. The developed pattern is a periodically arranged square structure of about 5mm × 5mm, and the distance between the adjacent sides of the two square photoresist blocks is about 1 mm.
(6) Etching an isolation groove along the developed pattern by using an Inductively Coupled Plasma (ICP) method;
in this embodiment, the plasma bombardment is stopped when etching to a certain position within the n-type contact layer along the developed pattern. The gas used by Inductively Coupled Plasma (ICP) is Cl2, BCl3 and Ar, wherein Cl2 is the main etching gas and BCl3 and Ar are the auxiliary etching gases. The width of the isolation groove is about 1mm, and the bottom surface of the isolation groove is in the n-type contact layer. The width of isolation groove is 1mm, and the degree of depth is between 3um-5 um.
(7) Cleaning the residual photoresist after etching the isolation groove;
(8) Spin-coating a layer of negative photoresist on the surface of the battery after the photoresist is cleaned;
(9) Exposing and developing the solar cell coated with the negative photoresist;
(10) After the solar cell is exposed and developed, a thin Au layer is thermally evaporated on the front side of the solar cell;
in this embodiment, the width of the Au layer is smaller than the width of the isolation trench, and both sides of the Au layer are not in contact with the isolation trench.
(11) Cleaning the photoresist, stripping the Au layer, and preparing an n-type contact electrode in the isolation groove;
in this embodiment, the isolation trench is formed on the n-type contact layer.
(12) Spin-coating a layer of negative photoresist on the front side of the solar cell, and corroding a GaAs substrate on the back side of the cell by using a mixed solution of NH4OH, H2O2 and H2O to prepare a random texture structure;
in this embodiment, the photoresist is used to protect the front surface of the solar cell and prevent the front surface of the solar cell from being corroded by the chemical agent, and then the photoresist is used as a masking layer for preparing the p-type contact electrode.
(13) Thermally evaporating a thin Ag layer on the back of the solar cell, thickening the Ag layer by an electroplating method, and finishing the preparation of the silver back reflector;
in this embodiment, the upper surface of the silver back reflector is a random texture surface, and the lower surface is a smooth plane, so that the back reflector can re-diffuse and reflect light that is not absorbed by the solar cell, mainly light larger than 870nm, back to the intermediate quantum dot layer, thereby extending the effective optical path.
(14) Exposing and developing the front side of the solar cell, and etching a groove according to a pattern obtained after exposure and development;
(15) A thin Au layer is thermally evaporated on the front side of the solar cell.
In this embodiment, the material of the n-type contact electrode is also Au.
(16) Cleaning the photoresist, stripping metal Au, and preparing a p-type contact electrode in the groove;
(17) Thickening the n-type contact electrode and the p-type contact electrode by an electroplating method;
in this embodiment, the p-type contact electrode is partially located in the trench in order to make good electrical contact with the p-type GaAs cap layer.
(18) Spin-coating a positive photoresist on the surface of the solar cell to enable the photoresist to completely cover the n-type contact electrode and the p-type contact electrode;
(19) Exposing and developing the solar cell coated with the positive photoresist;
(20) Preparing a light trapping structure by using a single-step inductively coupled plasma method along a pattern obtained after exposure and development;
in this embodiment, the average reflectivity of the light trapping structure in the wavelength range of 300-1300nm is less than 5%. The etching gas is Cl2, BCl3, O2 and Ar.
(21) And sputtering a passivation layer on the light trapping structure, and cleaning photoresist to complete the preparation of the InAs/GaAsSb quantum dot solar cell.
Fig. 4 is a schematic structural diagram of a cell including a light trapping structure according to an embodiment of the present disclosure, and as shown in fig. 4, the cell includes the light trapping structure.
In an embodiment of the present disclosure, when the solar cell is an InAs/GaAsSb quantum dot solar cell, the solar cell includes: the light trap structure comprises a light trapping structure, a passivation layer, a window layer, an emitter, an intermediate quantum dot layer, a base electrode, a contact layer, a substrate layer, a silver back reflector, an n-type contact electrode and a p-type contact electrode.
Fig. 5 is a schematic diagram illustrating a comparison between simulation results of absorption coefficients of a comparative GaAs solar cell with a light trapping structure and simulation results of a solar cell without a light trapping structure according to an embodiment of the present disclosure, as shown in fig. 5, a curve a is an absorption curve of the comparative GaAs solar cell without a light trapping structure, and a curve b is an absorption curve of the comparative GaAs solar cell with a light trapping structure.
Fig. 6 is a schematic diagram illustrating a comparison between a simulation result of an absorption coefficient of an InAs/GaAsSb quantum dot solar cell with a light trapping structure and a simulation result of a solar cell without a light trapping structure according to an embodiment of the present disclosure, where as shown in fig. 6, a curve d is an absorption curve of an InAs/GaAsSb quantum dot solar cell with a light trapping structure, and a curve c is an absorption curve of an InAs/GaAsSb quantum dot solar cell without a light trapping structure.
According to the results of simulation of fig. 5 and fig. 6, the light trapping structure provided by the present disclosure can significantly increase the light absorption rate of the InAs/GaAsSb quantum dot solar cell, and is also suitable for a common GaAs cell.
It is noted that the light trapping structure of the present disclosure is mainly directed to light absorption enhancement of InAs/GaAsSb quantum dot solar cells, but not limited to InAs/GaAsSb quantum dot solar cells, and the light trapping structure of the present disclosure has light absorption enhancement effect on all III-V group solar cells with light absorption bands within the scope of the claims of the present disclosure.
The present disclosure has been described in detail so far with reference to the drawings and embodiments. It is noted that, unless otherwise indicated, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. Moreover, the shapes and dimensions shown in the drawings are not intended to reflect actual sizes and proportions, but are merely intended to provide further explanation of the present disclosure. Unless otherwise indicated, the numerical parameters set forth in this specification and attached claims are approximations that can vary depending upon the desired properties sought to be obtained by the teachings of the specification. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. Further, unless steps are specifically described or must occur in sequence, the order of the steps is not limited to that listed above and may be changed or rearranged as desired by the desired design. The embodiments described above may be mixed and matched with each other or with other embodiments based on design and reliability considerations, i.e., technical features in different embodiments may be freely combined to form further embodiments. In addition, the above definitions of the device structure and the manufacturing method are not limited to the specific structures, shapes or manners mentioned in the embodiments, and those skilled in the art may easily modify or replace them.
The above-mentioned embodiments, objects, technical solutions and advantages of the present disclosure are further described in detail, it should be understood that the above-mentioned embodiments are only examples of the present disclosure, and are not intended to limit the present disclosure, and those skilled in the art can understand that various combinations and/or combinations of the features described in the various embodiments and/or the claims of the present disclosure can be made, and even if such combinations and/or combinations are not explicitly described in the present disclosure, any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the protection scope of the present disclosure.
Claims (10)
1. A light trapping structure suitable for InAs/GaAsSb quantum dot solar cells is characterized by comprising: a plurality of light trapping units;
the light trapping unit includes: a quadrangular frustum and a plurality of nanowires;
one end of each nanowire is in contact with the upper surface of the quadrangular frustum;
the nanowires are in a bent state; the bending angle of one end of each nanowire, which is in contact with the upper surface of the quadrangular frustum is smaller than that of one end of each nanowire, which is far away from the upper surface of the quadrangular frustum.
2. The light trapping structure of claim 1, wherein,
the material of the quadrangular frustum comprises gallium arsenide;
the material of the nanowire comprises gallium arsenide.
3. The light trapping structure according to claim 1, wherein the bending angle of one end of each of the nanowires contacting the upper surface of the quadrangular pyramid frustum is within a predetermined range;
the bending angle of one end of each nanowire far away from the upper surface of the quadrangular frustum pyramid is within a preset range;
the bending states of the plurality of nanowires are at least partially different.
4. The light trapping structure of claim 1, wherein the nanowires completely cover the upper surface of the quadrangular pyramid frustum.
5. The light trapping structure of claim 1, wherein a ratio of a height of the nanowires to a height of the quadrangular frustum meets a first preset ratio condition.
6. The light trapping structure of claim 1, wherein the light trapping structure is configured to reduce reflectivity in the visible wavelength band;
the light trapping structure is also used for reducing the reflectivity of a near infrared band with the wavelength below 1500 nm.
7. The light trapping structure of claim 6, wherein the average value of the reflectivity of the light trapping structure is less than 5% for a wavelength band with a wavelength in the range of 300nm-1300 nm.
8. A method for preparing a light trapping structure suitable for an InAs/GaAsSb quantum dot solar cell, which is used for manufacturing the light trapping structure suitable for the InAs/GaAsSb quantum dot solar cell as claimed in any one of claims 1 to 7, and which comprises the following steps:
coating photoresist on the surface of the solar cell to be prepared with the light trapping structure;
exposing and developing the surface of the light trapping structure to be prepared after the photoresist is coated;
placing the exposed and developed solar cell in a preset etching environment;
injecting a preset etching gas into the preset etching environment;
etching the solar cell by adopting an inductive coupling plasma method;
and taking out the solar cell after the etching lasts for the preset etching time, and completing the preparation of the light trapping structure.
9. The method for preparing a light trapping structure according to claim 8, wherein the preset etching environment comprises:
the etching temperature is between 10 and 12 degrees;
the etch pressure is between 4-5 mtorr.
10. The method of claim 8, wherein the predetermined etching gas comprises: cl 2 、BCl 3 、O 2 And A r ；
Wherein, O 2 The flow rate of (a) is 20-30% of the total flow rate of the preset etching gas.
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