CN115220150A - Multilayer structure waveguide grating antenna based on staggered etching and applied to optical phased array and preparation method thereof - Google Patents
Multilayer structure waveguide grating antenna based on staggered etching and applied to optical phased array and preparation method thereof Download PDFInfo
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- 230000003287 optical effect Effects 0.000 title claims abstract description 21
- 238000005530 etching Methods 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000002955 isolation Methods 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 4
- 230000006872 improvement Effects 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000008901 benefit Effects 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 230000005855 radiation Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
- G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
- G02B6/12011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides characterised by the arrayed waveguides, e.g. comprising a filled groove in the array section
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/124—Geodesic lenses or integrated gratings
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
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Abstract
The invention relates to a multilayer structure waveguide grating antenna based on staggered etching and applied to an optical phased array and a preparation method thereof, wherein the multilayer structure waveguide grating antenna comprises a substrate (1), a waveguide area and a top oxide layer (5) from bottom to top; the waveguide region comprises a first waveguide layer (2), an isolation layer (3) and a second waveguide layer (4) from bottom to top; wherein the second waveguide layer (4) is provided with deep and shallow grooves which are arranged in a staggered way. The invention reduces the leakage of light to the substrate, improves the proportion of upward light emission, further improves the emission efficiency of the grating, has the advantage of long effective emission length, and is beneficial to the improvement of the detection distance of the phased array and the realization of a high-power output device.
Description
Technical Field
The invention belongs to the field of integrated optoelectronic devices, and particularly relates to a multilayer structure waveguide grating antenna based on staggered etching and applied to an optical phased array and a preparation method thereof.
Background
The solid-state laser radar can greatly reduce the volume, weight, power consumption and cost of a system, and is a necessary trend in the development of the laser radar. The optical phased array based on the silicon-based photoelectronic technology promotes the development of the integrated solid-state laser radar, and the silicon-based photoelectronic technology has the characteristics of high integration level, compatibility with a CMOS (complementary metal oxide semiconductor) process, photoelectric monolithic integration and the like, and can provide wide prospects for the large-scale and low-cost quantitative production of silicon-based laser radar chips.
The loss of the optical phased array limits the detection distance, the waveguide grating antenna is an important element of the optical phased array and is responsible for coupling light from a waveguide into a free space, and the problem of low emission efficiency generally exists in the conventional waveguide grating antenna, so that the improvement of the emission efficiency of the emission grating is very important for the optical phased array. The radiation of the grating antenna towards the substrate affects the emission efficiency of the emission grating, and the efficiency of upward diffraction is mainly determined by the directivity of the grating, which is defined as the ratio of the optical power coupled up the chip to the optical power coupled out of the waveguide. Therefore, the high-directivity waveguide grating antenna has far-reaching significance for improving the detection distance of the silicon-based optical phased array.
CN112946814A discloses a high-efficiency and large-caliber grating antenna for an optical phased array and a preparation method thereof, and the grating antenna has the problems of low directivity and low effective transmission length.
Disclosure of Invention
The invention aims to solve the technical problem of providing a multilayer structure waveguide grating antenna based on staggered etching and applied to an optical phased array and a preparation method thereof.
The invention provides a multilayer structure waveguide grating antenna based on staggered etching and applied to an optical phased array, which comprises a substrate, a waveguide area and a top oxide layer from bottom to top; the waveguide region comprises a first waveguide layer, an isolation layer and a second waveguide layer from bottom to top; the second waveguide layer is provided with deep and shallow grooves which are arranged in a staggered mode.
The substrate, the isolation layer and the top oxide layer are all made of silicon dioxide.
The first waveguide layer is made of silicon; the second waveguide layer is made of silicon nitride.
The depth of the deep groove of the second waveguide layer is 250-300nm; the depth of the shallow trench is 150-200nm.
The thickness of the first waveguide layer is 50-100nm; the thickness of the second waveguide layer is 500-550nm.
The invention provides a preparation method of a multilayer structure waveguide grating antenna based on staggered etching, which is applied to an optical phased array, and comprises the following steps:
providing a substrate;
providing a first waveguide layer positioned on the surface of the substrate;
providing a second waveguide layer, wherein the second waveguide layer is arranged above the first waveguide layer along a direction vertical to the substrate, and the second waveguide layer is internally provided with a grating structure formed by carrying out deep etching and shallow etching in a staggered manner;
providing an isolation layer between the first waveguide layer and the second waveguide layer;
and providing a top oxide layer arranged on the surface of the second waveguide layer.
The invention utilizes the depth channel to control the interference condition, so that the radiation fields of the two trenches with different etching depths generate constructive interference in the emission direction and destructive interference in the substrate direction, and the directivity can be improved. Separation of the grating structure from the silicon waveguide allows control of the emission length of the grating and provides a new degree of freedom for optimizing the optical path length. The asymmetric multilayer structure may act as a bottom reflector, with radiation directed toward the substrate being reflected at the interface of the layers. Therefore, the high directivity of the waveguide grating antenna can be realized by optimizing grating structure parameters such as the etching depth, the waveguide layer thickness and the like.
Advantageous effects
The invention reduces the leakage of light to the substrate, improves the proportion of upward light emission, further improves the emission efficiency of the grating, has the advantage of long effective emission length, and is beneficial to the improvement of the detection distance of the phased array and the realization of a high-power output device.
Drawings
FIG. 1 is a schematic cross-sectional view of a grating antenna according to the present invention;
FIG. 2 is a three-dimensional perspective view of the grating antenna structure of the present invention;
FIG. 3 is a plot of directivity versus wavelength and waveguide thickness for a grating antenna of the present invention;
FIG. 4 is a diagram of the grating directivity-1 dB bandwidth of the grating antenna of the present invention;
FIG. 5 shows the near field electric field strength of the grating antenna according to the present invention;
FIG. 6 is a near field electric field strength fit of the grating antenna of the present invention;
FIG. 7 is a far field projection at 1500nm and 1600nm wavelength of the grating antenna of the present invention;
FIG. 8 is a far field normalization and angle for different wavelengths of a grating antenna according to the present invention;
element number description:
1. a substrate;
2. a first waveguide layer;
3. an isolation layer;
4. a second waveguide layer;
5. a top oxide layer.
Detailed Description
The invention will be further illustrated with reference to the following specific examples. It should be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. Further, it should be understood that various changes or modifications of the present invention may be made by those skilled in the art after reading the teaching of the present invention, and such equivalents may fall within the scope of the present invention as defined in the appended claims.
Example 1
As shown in fig. 1 and fig. 2, the present embodiment provides a multilayer waveguide grating antenna based on staggered etching, which is applied to an optical phased array, and includes, from bottom to top, a substrate 1, a waveguide region, and a top oxide layer 5; the waveguide region comprises a first waveguide layer 2, an isolation layer 3 and a second waveguide layer 4 from bottom to top; wherein, the second waveguide layer 4 has deep and shallow trenches arranged in a staggered manner. The substrate 1, the isolation layer 3 and the top oxide layer 5 are all made of silicon dioxide. The first waveguide layer 2 is made of silicon; the material of the second waveguide layer 4 is silicon nitride. In this embodiment, the depth of the deep trench of the second waveguide layer 4 is 260nm; the depth of the shallow trench is 180nm. The thickness of the first waveguide layer 2 is 90nm; the 4 thickness of the second waveguide layer is 540nm.
The embodiment also provides a preparation method of the multilayer structure waveguide grating antenna based on staggered etching, which is applied to the optical phased array, and the preparation method comprises the following steps:
providing a substrate 1;
providing a first waveguide layer 2 on the surface of the substrate 1;
providing a second waveguide layer 4 which is arranged above the first waveguide layer 2 along a direction vertical to the substrate 1, wherein the second waveguide layer 4 is internally provided with a grating structure formed by staggered deep etching and shallow etching;
providing an isolation layer 3 between the first waveguide layer 2 and the second waveguide layer 4;
a top oxide layer 5 is provided and disposed on the surface of the second waveguide layer 4.
The first waveguide layer of the embodiment can realize the directivity of more than 94% when the thickness is 90nm (figure 3), the grating-1 dB bandwidth reaches 287nm (figure 4) near the central wavelength of 1550nm, and a space is provided for a method for increasing the deflection angle of a light beam by expanding the scanning wavelength range. The near field distribution of a 50 μm length grating (fig. 5), the structure of separation of the grating from the waveguide provides a controllable perturbation intensity, thereby achieving centimeter level emission length (fig. 6), effective emission length reaching centimeter level, and ensuring a very small divergence angle. Far field pattern of the grating at 1500nm and 1600nm (fig. 7), far field deflection angle in air is greater than 11 ° over 1500nm to 1600nm wavelength scan range (fig. 8). Therefore, the device has high directivity, long effective transmission length and proper far field deflection angle, and can be well applied to a silicon-based optical phased array.
Claims (6)
1. A multilayer structure waveguide grating antenna based on staggered etching applied to an optical phased array comprises a substrate (1), a waveguide area and a top oxide layer (5) from bottom to top; the method is characterized in that: the waveguide region comprises a first waveguide layer (2), an isolation layer (3) and a second waveguide layer (4) from bottom to top; wherein the second waveguide layer (4) is provided with deep and shallow grooves which are arranged in a staggered mode.
2. The grating antenna of claim 1, wherein: the substrate (1), the isolation layer (3) and the top oxide layer (5) are all made of silicon dioxide.
3. The grating antenna of claim 1, wherein: the first waveguide layer (2) is made of silicon; the material of the second waveguide layer (4) is silicon nitride.
4. The grating antenna of claim 1, wherein: the depth of the deep groove of the second waveguide layer (4) is 250-300nm; the depth of the shallow trench is 150-200nm.
5. The grating antenna of claim 1, wherein: the thickness of the first waveguide layer (2) is 50-100nm; the thickness of the second waveguide layer (4) is 500-550nm.
6. A method for preparing a multilayer structure waveguide grating antenna based on staggered etching applied to an optical phased array comprises the following steps:
providing a substrate (1);
providing a first waveguide layer (2) on the surface of the substrate (1);
providing a second waveguide layer (4) which is arranged above the first waveguide layer (2) along a direction vertical to the substrate (1), wherein the second waveguide layer (4) is internally provided with a grating structure formed by carrying out deep etching and shallow etching in a staggered manner;
providing an isolation layer (3) between the first waveguide layer (2) and the second waveguide layer (4);
and providing a top oxidation layer (5) arranged on the surface of the second waveguide layer (4).
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210680007.7A CN115220150A (en) | 2022-06-16 | 2022-06-16 | Multilayer structure waveguide grating antenna based on staggered etching and applied to optical phased array and preparation method thereof |
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| CN202210680007.7A CN115220150A (en) | 2022-06-16 | 2022-06-16 | Multilayer structure waveguide grating antenna based on staggered etching and applied to optical phased array and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115842241A (en) * | 2022-12-23 | 2023-03-24 | 上海铭锟半导体有限公司 | Waveguide grating antenna based on evanescent wave regulation and control and manufacturing method |
| CN116661059A (en) * | 2023-07-20 | 2023-08-29 | 上海铭锟半导体有限公司 | High-directivity waveguide grating antenna and preparation method thereof |
| CN116736440A (en) * | 2023-08-16 | 2023-09-12 | 赛丽科技(苏州)有限公司 | Preparation process of multi-height waveguide |
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2022
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115842241A (en) * | 2022-12-23 | 2023-03-24 | 上海铭锟半导体有限公司 | Waveguide grating antenna based on evanescent wave regulation and control and manufacturing method |
| CN115842241B (en) * | 2022-12-23 | 2024-04-02 | 上海铭锟半导体有限公司 | Waveguide grating antenna based on evanescent wave regulation and control and manufacturing method |
| CN116661059A (en) * | 2023-07-20 | 2023-08-29 | 上海铭锟半导体有限公司 | High-directivity waveguide grating antenna and preparation method thereof |
| CN116661059B (en) * | 2023-07-20 | 2023-09-26 | 上海铭锟半导体有限公司 | High-directivity waveguide grating antenna and preparation method thereof |
| CN116736440A (en) * | 2023-08-16 | 2023-09-12 | 赛丽科技(苏州)有限公司 | Preparation process of multi-height waveguide |
| CN116736440B (en) * | 2023-08-16 | 2024-02-09 | 赛丽科技(苏州)有限公司 | Preparation process of multi-height waveguide |
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