CN115842241B - Waveguide grating antenna based on evanescent wave regulation and control and manufacturing method - Google Patents
Waveguide grating antenna based on evanescent wave regulation and control and manufacturing method Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 42
- 238000005530 etching Methods 0.000 claims abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 abstract description 4
- 238000000206 photolithography Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000005253 cladding Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Abstract
The invention discloses a waveguide grating antenna based on evanescent wave regulation and control and a manufacturing method thereof, wherein the waveguide grating antenna comprises a bulk silicon substrate, a first oxide layer, a device layer and a second oxide layer from bottom to top; the device layer is provided with a grating structure and a waveguide structure which are spaced at preset distances, the waveguide structure is configured to couple input light into the grating structure when the input light is received, and the grating structure is configured to emit the received coupled light into free space. According to the invention, the preparation of the grating structure and the waveguide structure is realized in a single device layer, so that the complexity of the process is reduced, the grating etching depth is not required to be controlled to be a few nanometers, the difficulty of the process is reduced, the millimeter-sized effective emission length can be easily realized, and the technical problem of high manufacturing difficulty of the waveguide grating antenna for manufacturing the millimeter-sized effective emission length in the single device layer at present is solved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a waveguide grating antenna based on evanescent wave regulation and control and a manufacturing method thereof.
Background
In recent years, due to the rise of autopilot, lidar has attracted great interest as an indispensable sensor for high-level autopilot. The traditional laser radar adopts a mechanical device to realize space scanning, and the laser radar generally has the problems of high cost, large size, difficult compliance with vehicle regulations, easy damage of mechanical structure, poor mass productivity and the like. The optical phased array can eliminate mechanical devices, realize true pure solid-state laser radar, greatly reduce volume and cost and improve the scanning speed of light beams.
Waveguide gratings are a very important device in optical phased arrays for emitting light in a waveguide into free space. The effective emission length of the waveguide grating is an important parameter, and the longer the effective emission of the grating, the smaller the divergence angle along the waveguide direction, and the smaller the divergence angle is, so that the resolution of the optical phased array is improved. The waveguide grating with millimeter-scale effective emission length is realized by etching silicon, the etching depth is only a few nanometers, and the process difficulty is increased. Millimeter-scale waveguide gratings can also be implemented with multilayer structures, but at the same time add complexity to the process.
Disclosure of Invention
The invention mainly aims to provide a waveguide grating antenna based on evanescent wave regulation and control and a manufacturing method thereof, and aims to solve the technical problem that the manufacturing difficulty of the waveguide grating antenna for manufacturing millimeter-order effective emission length in a single device layer is high at present.
In order to achieve the above purpose, the invention provides a waveguide grating antenna based on evanescent wave modulation, which comprises a bulk silicon substrate, a first oxide layer, a device layer and a second oxide layer from bottom to top; the device layer is provided with a grating structure and a waveguide structure which are spaced at preset distances, the waveguide structure is configured to couple input light into the grating structure when the input light is received, and the grating structure is configured to emit the received coupled light into free space.
Optionally, the grating structure is formed by a plurality of first trenches disposed on top of the device layer.
Optionally, the depth of the first groove is smaller than or equal to the thickness of the device layer.
Optionally, the waveguide structure is formed by two second trenches disposed on top of the device layer.
Optionally, the depth of the second trench is equal to the thickness of the device layer.
Optionally, the first oxide layer and the second oxide layer are made of insulating SiO 2 A layer.
In addition, in order to achieve the above purpose, the invention also provides a method for manufacturing the waveguide grating antenna based on evanescent wave regulation, which comprises the following steps:
s1: acquiring an SOI wafer; the SOI wafer comprises a silicon substrate, a first oxide layer and a device layer from bottom to top;
s2: forming shallow grooves at corresponding positions of the grating structure and the waveguide structure on the device layer by adopting a first mask etching process to obtain a grating structure and a waveguide intermediate structure;
s3: forming deep trenches at the corresponding positions of the waveguide structures on the device layer by adopting a second mask etching process to obtain the waveguide structures;
s4: a second oxide layer is deposited over the device layer.
Optionally, the obtaining the SOI wafer specifically includes: providing a bulk silicon substrate, forming a first oxide layer on the bulk silicon substrate, and forming a device layer on the oxide layer.
In addition, in order to achieve the above object, the present invention also provides a method for manufacturing a waveguide grating antenna based on evanescent wave modulation, which is characterized by comprising the following steps:
s1: acquiring an SOI wafer; the SOI wafer comprises a silicon substrate, a first oxide layer and a device layer from bottom to top;
s2: forming shallow grooves at corresponding positions of the grating structure on the device layer by adopting a third mask etching process to obtain the grating structure;
s3: forming deep trenches at the corresponding positions of the waveguide structures on the device layer by adopting a fourth mask etching process to obtain the waveguide structures;
s4: a second oxide layer is deposited over the device layer.
Optionally, the obtaining the SOI wafer specifically includes: providing a bulk silicon substrate, forming a first oxide layer on the bulk silicon substrate, and forming a device layer on the oxide layer.
The invention provides a waveguide grating antenna based on evanescent wave regulation and control and a manufacturing method thereof, wherein the waveguide grating antenna comprises a bulk silicon substrate, a first oxide layer, a device layer and a second oxide layer from bottom to top; the device layer is provided with a grating structure and a waveguide structure which are spaced at preset distances, the waveguide structure is configured to couple input light into the grating structure when the input light is received, and the grating structure is configured to emit the received coupled light into free space. According to the invention, the preparation of the grating structure and the waveguide structure is realized in a single device layer, so that the complexity of the process is reduced, the grating etching depth is not required to be controlled to be a few nanometers, the difficulty of the process is reduced, the millimeter-sized effective emission length can be easily realized, and the technical problem of high manufacturing difficulty of the waveguide grating antenna for manufacturing the millimeter-sized effective emission length in the single device layer at present is solved.
Drawings
Fig. 1 is a schematic diagram of a waveguide grating antenna based on evanescent wave modulation in an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a waveguide grating antenna based on evanescent wave modulation in an embodiment of the present invention.
Fig. 3 is a schematic cross-sectional view of an SOI wafer used in an embodiment of the present invention.
Fig. 4 is a schematic diagram of a waveguide grating antenna based on evanescent wave modulation after first lithography etching in a manufacturing method according to an embodiment of the present invention.
Fig. 5 is a schematic diagram of a waveguide grating antenna based on evanescent wave modulation after a second photolithography etching in a manufacturing method according to an embodiment of the present invention.
Fig. 6 is a schematic diagram of a waveguide grating antenna based on evanescent wave modulation after first lithography etching in a second manufacturing method according to an embodiment of the present invention.
Fig. 7 is a schematic diagram of a waveguide grating antenna based on evanescent wave modulation after a second photolithography etching in a second manufacturing method according to an embodiment of the present invention.
The achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, based on the embodiments of the invention, which would be apparent to one of ordinary skill in the art without inventive effort are within the scope of the invention.
It should be noted that all directional indicators (such as up, down, left, right, front, and rear … …) in the embodiments of the invention are merely used to explain the relative positional relationship, movement, etc. between the components in a particular posture (as shown in the drawings), and if the particular posture is changed, the directional indicators are changed accordingly.
In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not within the scope of protection claimed by the invention.
Currently, in the related art, manufacturing difficulty in fabricating waveguide grating antennas with effective transmission lengths on the order of millimeters in a single device layer is great.
In order to solve the problem, various embodiments of the waveguide grating antenna based on evanescent wave modulation and the manufacturing method of the waveguide grating antenna are provided. According to the waveguide grating antenna based on evanescent wave regulation and control and the manufacturing method, the preparation of the grating structure and the waveguide structure is realized in the single device layer, so that the complexity of the process is reduced, the etching depth of the grating is not required to be controlled to be a few nanometers, the process difficulty is reduced, the millimeter-level effective emission length can be easily realized, and the technical problem that the manufacturing difficulty of the waveguide grating antenna for manufacturing the millimeter-level effective emission length in the single device layer is high at present is solved.
Referring to fig. 1, fig. 1 is a schematic diagram of a waveguide grating antenna based on evanescent wave modulation according to an embodiment of the present invention.
The embodiment provides a waveguide grating antenna based on evanescent wave regulation, which comprises a bulk silicon substrate, a first oxide layer, a device layer and a second oxide layer from bottom to top; the device layer is provided with a grating structure and a waveguide structure which are spaced at preset distances, the waveguide structure is configured to couple input light into the grating structure when the input light is received, and the grating structure is configured to emit the received coupled light into free space.
It will be readily appreciated that the waveguide structure is configured to couple the input light to a grating structure upon receipt of the input light, the grating structure being configured to emit the received coupled light into free space. In this way, the embodiment can realize longer waveguide grating in a single device layer under the condition of not strictly controlling etching depth through evanescent wave regulation
In a preferred embodiment, the grating structure is formed by a plurality of first grooves arranged on the top of the device layer, and the depth of the first grooves is smaller than or equal to the thickness of the device layer; the waveguide structure is formed by two second grooves arranged on the top of the device layer, and the depth of each second groove is equal to the thickness of the device layer.
It will be readily appreciated that in this embodiment, as shown in fig. 2, light propagates in the waveguide, and a portion of the light propagates in the cladding, which is coupled to the grating and is emitted into free space through the grating. Because the light emitted by the grating is a part of the light coupled into the grating by the waveguide, when the interval between the grating and the waveguide is increased, less light is coupled into the grating, and less light is emitted from the grating per unit length, so that the longer the grating is, the more light can be emitted from the grating.
Therefore, the control of the disturbance intensity of the grating is realized by evanescent wave regulation, namely by controlling the distance between the waveguide and the grating, the disturbance intensity is reduced, and the effective emission length of the grating is improved.
In a preferred embodiment, the first oxide layer and the second oxide layer are made of insulating SiO 2 A layer.
It should be noted that, in a grating formed by shallow etching of a common single device layer, 100% of light directly enters the grating portion, and the proportion of light radiated from the grating per unit length is the same, and it is assumed to be 10%, and only 90% of light remains after passing through the unit length. Then the unit length is passed again, and 81% of the unit length is left. The structure provided by this embodiment assumes that the light coupled by the waveguide to the grating portion per unit length is only 2%, and that the grating is 10% de-radiated by 2% after passing the unit length, whereby the grating can be made longer.
In the embodiment, the waveguide grating antenna based on evanescent wave regulation is provided, a multilayer structure is not needed, the waveguide grating antenna can be realized in a single device layer, the complexity of the process is reduced, the grating etching depth is not required to be controlled to be a few nanometers, the difficulty of the process is reduced, and the effective emission length of millimeter magnitude can be easily realized.
In a preferred embodiment, the present application further provides a method for manufacturing a waveguide grating antenna based on evanescent wave modulation, including the steps of:
s1: acquiring an SOI wafer; the SOI wafer comprises a silicon substrate, a first oxide layer and a device layer from bottom to top;
s2: forming shallow grooves at corresponding positions of the grating structure and the waveguide structure on the device layer by adopting a first mask etching process to obtain a grating structure and a waveguide intermediate structure;
s3: forming deep trenches at the corresponding positions of the waveguide structures on the device layer by adopting a second mask etching process to obtain the waveguide structures;
s4: a second oxide layer is deposited over the device layer.
Optionally, the obtaining the SOI wafer specifically includes: a bulk silicon substrate is provided, a first oxide layer is formed on the bulk silicon substrate, and a device layer is formed on the oxide layer, as shown in fig. 3.
Specifically, in this embodiment, an SOI wafer is adopted, and a waveguide grating antenna based on evanescent wave modulation is obtained based on the technological processes of photolithography, etching and the like, and the main technological process is as follows:
step one: the structure is based on an SOI wafer, and a grating pattern is obtained through photoetching, etching and other technological processes. Wherein, after the first photolithography etching, as shown in fig. 4.
Step two: protecting the graph at the grating, and obtaining the final waveguide grating and waveguide graph through photoetching, etching and other technological processes. Wherein, after the second photolithography etching, as shown in fig. 5.
Step three: deposition of a SiO layer by PECVD 2 As an upper cladding layer for the entire device. Wherein after deposition of the upper cladding layer, as shown in fig. 1.
In a preferred embodiment, the present application further provides a method for manufacturing a waveguide grating antenna based on evanescent wave modulation, which is characterized by comprising the following steps:
s1: acquiring an SOI wafer; the SOI wafer comprises a silicon substrate, a first oxide layer and a device layer from bottom to top;
s2: forming shallow grooves at corresponding positions of the grating structure on the device layer by adopting a third mask etching process to obtain the grating structure;
s3: forming deep trenches at the corresponding positions of the waveguide structures on the device layer by adopting a fourth mask etching process to obtain the waveguide structures;
s4: a second oxide layer is deposited over the device layer.
Optionally, the obtaining the SOI wafer specifically includes: providing a bulk silicon substrate, forming a first oxide layer on the bulk silicon substrate, and forming a device layer on the oxide layer.
Specifically, in this embodiment, an SOI wafer is adopted, and a waveguide grating antenna based on evanescent wave modulation is obtained based on the technological processes of photolithography, etching and the like, and the main technological process is as follows:
step one: the structure is based on an SOI wafer, and a grating pattern is obtained through the technical processes of photoetching, etching and the like. Wherein, after the first photolithography etching, as shown in fig. 6.
Step two: protecting the graph at the grating, and obtaining the waveguide graph through photoetching, etching and other technological processes. Wherein, after the second photolithography etching, as shown in fig. 7.
Step three: deposition of a SiO layer by PECVD 2 As an upper cladding layer for the entire device. Wherein after deposition of the upper cladding layer, as shown in fig. 1.
In this embodiment, a waveguide grating antenna based on evanescent wave modulation and a manufacturing method are provided, and by implementing preparation of a grating structure and a waveguide structure in a single device layer, the complexity of the process is reduced, the etching depth of the grating does not need to be controlled to be several nanometers, the difficulty of the process is reduced, the effective emission length of millimeter magnitude can be easily realized, and the technical problem of high manufacturing difficulty of manufacturing the waveguide grating antenna of millimeter magnitude effective emission length in the single device layer at present is solved.
Other embodiments or specific implementation manners of the waveguide grating antenna manufacturing method based on evanescent wave modulation of the present invention may refer to the waveguide grating antenna embodiments based on evanescent wave modulation, and are not described herein.
The foregoing description is only of the preferred embodiments of the invention, and is not intended to limit the scope of the invention, but rather is intended to cover any equivalent structure or equivalent flow scheme disclosed in the specification and drawings, or any other related art, directly or indirectly, as desired.
Claims (6)
1. The waveguide grating antenna based on evanescent wave regulation is characterized by comprising a bulk silicon substrate, a first oxide layer, a device layer and a second oxide layer from bottom to top; the device layer is provided with a grating structure and a waveguide structure which are spaced at a preset distance, the waveguide structure is configured to couple input light into the grating structure when the input light is received, and the grating structure is configured to emit the received coupled light into free space;
the grating structure is formed by a plurality of first grooves arranged on the top of the device layer, and the depth of each first groove is smaller than or equal to the thickness of the device layer;
the waveguide structure is formed by two second grooves arranged on the top of the device layer, and the depth of each second groove is equal to the thickness of the device layer;
and controlling the disturbance intensity of the grating structure by controlling the preset distance, wherein the effective emission length of the grating structure is increased by reducing the disturbance intensity.
2. The evanescent wave modulation based waveguide grating antenna according to claim 1, wherein the first and second oxide layers comprise insulating SiO 2 A layer.
3. A method for manufacturing a waveguide grating antenna based on evanescent wave modulation, characterized in that the method is used for manufacturing the waveguide grating antenna according to claim 1 or 2, comprising the following steps:
s1: acquiring an SOI wafer; the SOI wafer comprises a silicon substrate, a first oxide layer and a device layer from bottom to top;
s2: forming shallow grooves at corresponding positions of the grating structure and the waveguide structure on the device layer by adopting a first mask etching process to obtain a grating structure and a waveguide intermediate structure, wherein the grating structure and the waveguide structure are arranged on the device layer and are spaced by a preset distance;
s3: forming deep trenches at the corresponding positions of the waveguide structures on the device layer by adopting a second mask etching process to obtain the waveguide structures;
s4: a second oxide layer is deposited over the device layer.
4. The method for manufacturing a waveguide grating antenna based on evanescent wave modulation according to claim 3, wherein the step of obtaining an SOI wafer comprises: providing a bulk silicon substrate, forming a first oxide layer on the bulk silicon substrate, and forming a device layer on the oxide layer.
5. A method for manufacturing a waveguide grating antenna based on evanescent wave modulation, characterized in that the method is used for manufacturing the waveguide grating antenna according to claim 1 or 2, comprising the following steps:
s1: acquiring an SOI wafer; the SOI wafer comprises a silicon substrate, a first oxide layer and a device layer from bottom to top;
s2: forming shallow grooves at corresponding positions of the grating structure on the device layer by adopting a third mask etching process to obtain the grating structure;
s3: forming deep trenches at positions corresponding to the waveguide structures on the device layer by adopting a fourth mask etching process to obtain the waveguide structures, wherein the grating structures and the waveguide structures are arranged on the device layer and are spaced by a preset distance; s4: a second oxide layer is deposited over the device layer.
6. The method for manufacturing a waveguide grating antenna based on evanescent wave modulation according to claim 5, wherein the step of obtaining an SOI wafer comprises: providing a bulk silicon substrate, forming a first oxide layer on the bulk silicon substrate, and forming a device layer on the oxide layer.
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