CN115209607A - Composite high-frequency substrate and preparation method thereof - Google Patents

Composite high-frequency substrate and preparation method thereof Download PDF

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Publication number
CN115209607A
CN115209607A CN202110399435.8A CN202110399435A CN115209607A CN 115209607 A CN115209607 A CN 115209607A CN 202110399435 A CN202110399435 A CN 202110399435A CN 115209607 A CN115209607 A CN 115209607A
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China
Prior art keywords
layer
frequency
copper foil
resin adhesive
film layer
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Inventor
李韦志
何家华
杜伯贤
林志铭
李建辉
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Yasen Electronic Materials Technology Dongtai Co ltd
Kunshan Aplus Tec Corp
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Yasen Electronic Materials Technology Dongtai Co ltd
Kunshan Aplus Tec Corp
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Priority to CN202110399435.8A priority Critical patent/CN115209607A/en
Priority to TW110142249A priority patent/TWI829033B/en
Publication of CN115209607A publication Critical patent/CN115209607A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0296—Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295
    • H05K1/0298—Multilayer circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0237—High frequency adaptations
    • H05K1/024—Dielectric details, e.g. changing the dielectric material around a transmission line
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4652—Adding a circuit layer by laminating a metal foil or a preformed metal foil pattern
    • H05K3/4655—Adding a circuit layer by laminating a metal foil or a preformed metal foil pattern by using a laminate characterized by the insulating layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4652—Adding a circuit layer by laminating a metal foil or a preformed metal foil pattern
    • H05K3/4658—Adding a circuit layer by laminating a metal foil or a preformed metal foil pattern characterized by laminating a prefabricated metal foil pattern, e.g. by transfer

Abstract

The invention discloses a composite high-frequency substrate and a preparation method thereof, wherein the composite high-frequency substrate comprises a first copper foil layer, a first high-frequency resin adhesive layer, a composite structure film layer, a second high-frequency resin adhesive layer and a second copper foil layer; the composite structure film layer is an odd layer structure consisting of low dielectric film layers and third high-frequency resin adhesive layers alternately; and one surface of the composite structure film layer, which is in contact with the first high-frequency resin adhesive layer/the second high-frequency resin adhesive layer, is the low dielectric film layer. The composite substrate manufactured by selecting the composite structure has the advantages of good electrical property, particularly extremely low transmission loss, superior cost, shorter manufacturing procedure, low CTE, good dimensional stability, stable dk/df performance under high temperature and humidity environment, ultralow water absorption, excellent mechanical performance, high adhesion strength, capability of providing thick low-dielectric layers and the like.

Description

Composite high-frequency substrate and preparation method thereof
Technical Field
The invention belongs to the technical field of printed circuit boards, and particularly relates to a composite high-frequency substrate.
Background
With the rapid development of information technology, a great deal of high-speed transmission technology such as 5G in the world is popularized and millimeter wave transmission is accelerated, and various types of mixed-compression structure multilayer board designs and applications are presented in the market for meeting the requirements of high-frequency and high-speed signal transmission and reducing the production cost of terminal equipment. Printed circuit boards are indispensable materials for electronic products, and as consumer electronic products increase in demand, the demand for printed circuit boards also increases. Since a Flexible Printed Circuit (FPC) has the characteristics of flexibility and three-dimensional wiring, the FPC is widely used in computers and peripheral devices thereof, communication products, consumer electronic products, and the like, under the driving trend of high frequency and high speed information technology.
Currently, the high frequency plates mainly used in the industry are LCP (Liquid crystal polymer) plates, fluorine resin fiber plates, and MPI (Modified polyimide) plates. Although the substrate made of LCP film has good processability and is stable in transmission loss due to low water absorption rate in high temperature and high humidity environment, the problem is that the dielectric property is difficult to be further modified and reduced, the dissipation factor can reach 0.002-0.003 but the dielectric constant is more than 3.2-4.0, compared with fluorine-based material, the substrate is limited in high speed transmission scene, and it is difficult to be reduced in loss of metal conductor due to low adhesion force of surface property as the fluorine-based material, and the melting point of the LCP film produced in the market is about 300 ℃, which causes poor uniformity of thickness in subsequent high temperature assembly process. The fluorine-based resin has excellent electrical characteristics such as a low Dielectric constant and a low Dielectric loss, for example, a Dielectric constant (Dk) of about 2.1 and a Dielectric loss factor (Df) of about 0.0004 of a Polytetrafluoroethylene (PTFE) fluorine-based substrate at a frequency of 10GHz, and also has an excellent property of a low water absorption of about 0.03%. However, in addition to the poor dimensional stability due to the low adhesion force of the surface characteristics as the fluorine-based material, the difficulty in selecting a proper copper foil to reduce the conductor loss, the high thermal expansion coefficient (about 200 ppm/DEG C) of the copper foil is likely to cause poor dimensional stability, the metallization difficulty due to the excessive shrinkage during laser drilling, and the circuit fracture, the dimensional change directly affects the manufacturing and alignment shift of the conductor circuit, especially the high density requirement, and the influence degree is more obvious under the condition that the circuit is finer and finer, so the fluorine-based polymer is directly made into the substrate, although the extremely low Dk/Df can be obtained, the practical application is not feasible, and the fluorine-based polymer is generally combined with other materials with low thermal expansion coefficient to improve the processability in structure or composition, so that the overall dielectric performance is not as expected.
US patent No. US 3676566A proposes a composite laminated structure of polyimide and fluorocarbon polymer, TW M531056U taiwan patent, CN 103096612B patent, CN 202276545U patent, TW M422159U1 taiwan patent, TW M436933U1 patent, CN 202773176U patent and other proposed high frequency substrate structures, CN 105269884B patent proposes a composite high frequency double-sided copper foil substrate and a manufacturing method thereof, TW I645977B patent proposes a PI type double-sided copper foil substrate for high frequency high speed transmission and a manufacturing method thereof, CN 207772540U patent proposes LCP or a fluorine-based polymer high frequency high transmission double-sided composite substrate, CN 207744230U patent proposes a fluorine-based polymer high frequency high transmission double-sided substrate and a manufacturing method thereof, CN 1055753B patent proposes a structure of a high frequency adhesive water layer and a manufacturing method thereof, CN 2942424230U patent proposes a high frequency polymer high frequency high transmission double-sided substrate and a manufacturing method thereof, CN 294210559 patent proposes a high frequency adhesive water layer structure and a manufacturing method thereof, CN 281052859 patent proposes a high frequency adhesive layer and a high frequency covering film having the same properties as those of the above mentioned earlier patent, and a high frequency covering film.
Disclosure of Invention
The invention mainly solves the technical problem of providing a composite high-frequency substrate and a preparation method thereof. The stack structure has the advantages that the low CTE of thin films such as modified polyimide films and the symmetry of CTE under biaxial extension of thick films are utilized to support the thermal expansion value characteristic and the processability of the whole substrate, so that the substrate has low and uniform thermal expansion coefficient, good dimensional stability and low warping height, and compared with resin coating, the thin films generally have better and stable mechanical characteristic and drilling processing characteristic. The high-frequency resin adhesive layer has strong adhesive force, can select the copper foil with low roughness to effectively reduce the influence of conductor loss during high-frequency signal transmission, has lower temperature (higher pressing temperature is needed because the melting point of the film is more than 300 ℃) compared with the temperature needed by directly pressing the copper foil by the film, and also reduces the cost generated by equipment requirements. In addition, compared with the common polyimide or modified polyimide film, the high-frequency resin adhesive has lower hygroscopicity and Dk/Df, so that the composite film of the low dielectric film and the high-frequency resin adhesive replaces the traditional low dielectric film such as LCP film, polyimide film or modified polyimide film which is only used as a dielectric layer, the thick low dielectric layer is easy to manufacture, the hygroscopicity and the electrical property of the manufactured substrate are better, the cost is reduced, and the competitive advantage is increased.
In order to solve the technical problems, the invention adopts a technical scheme that: a composite high-frequency substrate comprises a first copper foil layer, a first high-frequency resin adhesive layer, a composite structure film layer, a second high-frequency resin adhesive layer and a second copper foil layer;
the composite structure film layer is an odd layer structure consisting of low dielectric film layers and third high-frequency resin adhesive layers alternately;
and one surface of the composite structure film layer, which is in contact with the first high-frequency resin adhesive layer/the second high-frequency resin adhesive layer, is the low dielectric film layer.
Further, the first high-frequency resin adhesive layer, the second high-frequency resin adhesive layer and the third high-frequency resin adhesive layer are low-dielectric adhesive layers with a Dk value of 2.00-3.50 10GHz and a Df value of 0.001-0.010 10GHz.
Further, the first copper foil layer and the second copper foil layer are both one of an ED copper foil layer, an RA copper foil layer, an HA copper foil layer, and an HA-V2 copper foil layer.
Further, the total thickness of the composite high-frequency substrate is 35-700 μm, wherein the thickness of the first copper foil layer and the thickness of the second copper foil layer are both 6-70 μm; the thickness of the third high-frequency resin glue layer is 5-50 mu m; the thickness of the low dielectric film layer is 8-100 μm.
Further, both the first copper foil layer and the second copper foil layer are copper foil layers having a surface roughness RZ of 0.4 to 2.0 μm.
Further, the low dielectric thin film layer is a thin film having a Dk value of 2.0 to 3.5 10GHz and a Df value of 0.002 to 0.020 10GHz; the low dielectric film layer is one of a polyimide film layer, a modified polyimide film layer, a fluoroethylene-propylene copolymer film layer, a tetrafluoroethylene-perfluorovinyl ether copolymer film layer, a polytetrafluoroethylene film layer, a liquid crystal polymer film layer, a polyether-ether-ketone film layer, a polyphenyl ether film layer and a polyphenyl thioether film layer.
Further, the material of the first high-frequency resin adhesive layer, the second high-frequency resin adhesive layer, and the third high-frequency resin adhesive layer is at least one of fluororesin, epoxy resin, acrylic resin, urethane resin, thermosetting polyimide resin, silicone rubber resin, parylene resin, polycarbonate resin, special cyanoester, polysulfone resin, bismaleimide resin and polyimide resin, polyethersulfone, modified polyimide resin, liquid crystal polymer, polyetheretherketone, polyethylene, polystyrene, modified low dielectric BT resin, polyphenylene oxide, polyolefin, and polytetrafluoroethylene.
Furthermore, the overall water absorption of the composite high-frequency substrate is 0.1-1.0%; the overall CTE of the hybrid high frequency substrate is in the range of 5-50 ppm/DEG C.
The invention adopts a further technical scheme for solving the technical problems that:
the preparation method of the composite high-frequency substrate comprises the following steps:
step one, preparing a composite structure film, coating a low dielectric film layer with a third high-frequency resin adhesive layer, laminating another low dielectric film layer, drying and curing;
step two, coating the material obtained in the step one on a first high-frequency resin adhesive layer, then laminating a first copper foil layer, drying and curing;
and step three, coating a second high-frequency resin adhesive layer on one surface, which is not the first copper foil layer, of the material obtained in the step two, then pressing the second copper foil layer, drying and curing to obtain the composite high-frequency substrate.
Further, the preparation method of the composite high-frequency substrate comprises the following steps:
step one, preparing a low dielectric film layer, coating a third high-frequency resin adhesive layer on the low dielectric film layer, then adhering the low dielectric film layer to another low dielectric film layer, and drying and curing the low dielectric film layer;
step two, coating the material obtained in the step one on a third high-frequency resin adhesive layer, then adhering the material to another low-dielectric film layer, drying and curing, repeating the step N times, wherein N is a positive integer not less than 1;
step three, coating the material obtained in the step two with a first high-frequency resin adhesive layer, then laminating a first copper foil layer, drying and curing;
and step four, coating a second high-frequency resin adhesive layer on one surface, which is not the first copper foil layer, of the material obtained in the step three, then pressing the second copper foil layer, drying and curing to obtain the composite high-frequency substrate.
The invention has the beneficial effects that: the composite substrate is mainly used for solving the problem of transmission loss of millimeter wave transmission and solving the common processability problems of LCP (liquid Crystal Polymer) substrates, fluorine substrates and MPI (Multi-layer interconnection) substrates through a composite structure, has extremely low dielectric loss and dielectric constant, uniform and low thermal expansion coefficient and excellent transmission performance in a high-temperature or high-humidity environment; through the very effectual bodiness of compound structure ability, reach low transmission loss demand design, through the very big reduction processing temperature of the use of high frequency resin glue film, therefore have splendid thickness uniformity and cost advantage.
Drawings
FIG. 1 is a schematic view of the structure of the present invention (3 layers of composite structure film);
FIG. 2 is a schematic structural view of the present invention (5 layers of composite structural film);
FIG. 3 is a schematic structural view of comparative example 1 and comparative example 2 of the present invention;
fig. 4 is a schematic structural view of comparative example 3 and comparative example 4 of the present invention.
Detailed Description
The following detailed description of the preferred embodiments of the present invention, taken in conjunction with the accompanying drawings, will make the advantages and features of the invention easier to understand by those skilled in the art, and thus will clearly and clearly define the scope of the invention.
The embodiment is as follows: a composite high-frequency substrate is shown in FIG. 1 or FIG. 2, and comprises a first copper foil layer 101, a first high-frequency resin adhesive layer 102, a composite structure film layer 103, a second high-frequency resin adhesive layer 102 and a second copper foil layer 101;
the composite structure film layer is an odd layer structure formed by alternately arranging a low dielectric film layer 1031 and a third high-frequency resin adhesive layer 1032;
and one surface of the composite structure film layer, which is in contact with the first high-frequency resin adhesive layer/the second high-frequency resin adhesive layer, is the low dielectric film layer.
The first high-frequency resin adhesive layer, the second high-frequency resin adhesive layer and the third high-frequency resin adhesive layer are low-dielectric adhesive layers with Dk values of 2.00-3.50 (10G Hz) and Df values of 0.001-0.010 (10G Hz).
The first copper foil layer and the second copper foil layer are respectively one of an ED copper foil layer, an RA copper foil layer, an HA copper foil layer and an HA-V2 copper foil layer.
The total thickness of the composite high-frequency substrate is 35-700 mu m, wherein the thicknesses of the first copper foil layer and the second copper foil layer are both 6-70 mu m; the thickness of the third high-frequency resin glue layer is 5-50 mu m; the thickness of the low dielectric film layer is 8-100 μm. Preferably, the total thickness of the composite high-frequency substrate is 85-300 μm, wherein the thickness of the first copper foil layer and the second copper foil layer is 12-18 μm; the thickness of the third high-frequency resin glue layer is 10-25 mu m; the thickness of the low dielectric film layer is 12-50 μm.
Both the first copper foil layer and the second copper foil layer are copper foil layers having a surface roughness RZ of 0.4 to 2.0 μm.
The low dielectric film layer is a film with Dk value of 2.0-3.5 (10G Hz) and Df value of 0.002-0.020 (10G Hz); the low dielectric film layer is one of a polyimide film layer, a modified polyimide film layer, a fluoroethylene-propylene copolymer film layer, a tetrafluoroethylene-perfluorovinyl ether copolymer film layer, a polytetrafluoroethylene film layer, a liquid crystal polymer film layer, a polyether-ether-ketone film layer, a polyphenyl ether film layer and a polyphenyl thioether film layer. Preferably a polyimide film layer or a modified polyimide film layer.
The first high-frequency resin adhesive layer, the second high-frequency resin adhesive layer and the third high-frequency resin adhesive layer are made of at least one of fluororesin, epoxy resin, acrylic resin, urethane resin, thermosetting polyimide resin, silicone rubber resin, poly-p-xylylene resin, polycarbonate resin, special cyanoester, polysulfone resin, bismaleimide resin and polyimide resin, polyether sulfone, modified polyimide resin, liquid crystal polymer, polyether ether ketone, polyethylene, polystyrene, modified low dielectric BT resin, polyphenylene oxide, polyolefin and polytetrafluoroethylene. Preferably, the third high-frequency resin adhesive layer is a thermosetting polyimide resin adhesive layer, and the content of polyimide in the third high-frequency resin adhesive layer is 40% -95%.
The overall water absorption of the composite high-frequency substrate is 0.1-1.0%; the overall CTE of the hybrid high frequency substrate is in the range of 5-50 ppm/DEG C. Preferably, the overall water absorption is in the range of 0.3-0.8% and the overall CTE is in the range of 5-15ppm/° C.
Embodiment a), when the composite structure film layer is 3 layers, the method for preparing a composite high-frequency substrate comprises the following steps:
step one, preparing a composite structure film, coating a low dielectric film layer with a third high-frequency resin adhesive layer, laminating another low dielectric film layer, drying and curing;
step two, coating the material obtained in the step one on a first high-frequency resin adhesive layer, then laminating a first copper foil layer, drying and curing;
and step three, coating a second high-frequency resin adhesive layer on one surface, which is not the first copper foil layer, of the material obtained in the step two, then pressing the second copper foil layer, drying and curing to obtain the composite high-frequency substrate.
Embodiment b), when the number of the composite structure film layers is more than 3, the method for preparing the composite high-frequency substrate comprises the following steps:
step one, coating a third high-frequency resin adhesive layer on a low-dielectric thin film layer, then adhering the low-dielectric thin film layer to another low-dielectric thin film layer, and drying and curing the low-dielectric thin film layer;
step two, coating a third high-frequency resin adhesive layer on the material obtained in the step one, then adhering the material to another low-dielectric film layer, drying and curing, repeating the step N times, wherein N is a positive integer not less than 1;
step three, coating the material obtained in the step two on a first high-frequency resin adhesive layer, then laminating a first copper foil layer, drying and curing;
and step four, coating a second high-frequency resin adhesive layer on one surface, which is not the first copper foil layer, of the material obtained in the step three, then pressing the second copper foil layer, drying and curing to obtain the composite high-frequency substrate.
Examples 1 to 4 of the present invention were compared with the basic performance of an LCP substrate 200 (comparative examples 1 and 2, as shown in fig. 3, composed of a copper foil layer 201 and an LCP film layer 202), a fluorine-based substrate 300 (comparative examples 3 and 4, as shown in fig. 4, composed of a polyimide layer 303, a modified fluorine-based resin layer 302, and a copper foil layer 301) according to the prior art, and are recorded in table 1 below.
Examples 1 and 2 are composed in embodiment a) (the structure is shown in fig. 1), the thickness of each low dielectric film layer in example 1 is 25um, the thickness of each low dielectric film layer in example 2 is 50um, and the thickness of each third high-frequency resin glue layer is 25um;
examples 3 and 4 are shown in embodiment b) (the structure is shown in fig. 2), the thickness of each low dielectric thin film layer in example 3 is 12.5um, the thickness of each low dielectric thin film layer in example 4 is 25um, and the thickness of each third high-frequency resin glue layer is 25um.
In addition, the first copper foil layer and the second copper foil layer used in examples 1 to 4 and comparative examples 1 to 4 are electrolytic copper foils. The compositions of the third high-frequency resin paste layer, the first high-frequency resin paste layer, and the second high-frequency resin paste layer of examples 1 to 4 contained 60% of a thermosetting polyimide resin, 20% of a flame retardant, 10% of an epoxy resin, 8% of a sintered silica, and 2% of a fluorine-based resin, based on the total weight of each layer. The low dielectric thin film layers of examples 1 to 4 were high frequency polyimide (PIAM, FS type). The LCP film layers of comparative examples 1 and 2 were formed using Liquid Crystal Polymer (LCP) films (Kuraray, vecstar CT-Z). The fluorine-containing substrates of comparative examples 3 and 4 were commercially available substrates of Dupont (TK series) and Shirre (PT series) of the same industry, respectively.
TABLE 1
Figure BDA0003019852680000081
As can be seen from the performance comparison results in table 1, the composite substrate of the present invention has the advantages of good electrical properties, especially very low transmission loss, low CTE, good dimensional stability, stable Dk/Df performance under high temperature and high humidity environment, ultra-low water absorption, high adhesion strength, and provision of a thick low dielectric layer.
The above description is only an embodiment of the present invention, and is not intended to limit the scope of the present invention, and all equivalent structural changes made by using the contents of the present specification and the drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.

Claims (10)

1. A composite high frequency substrate, comprising: the composite structure comprises a first copper foil layer, a first high-frequency resin adhesive layer, a composite structure film layer, a second high-frequency resin adhesive layer and a second copper foil layer;
the composite structure film layer is an odd layer structure consisting of low dielectric film layers and third high-frequency resin adhesive layers alternately;
and one surface of the composite structure film layer, which is in contact with the first high-frequency resin adhesive layer/the second high-frequency resin adhesive layer, is the low dielectric film layer.
2. The composite high-frequency substrate as set forth in claim 1, wherein: the first high-frequency resin adhesive layer, the second high-frequency resin adhesive layer and the third high-frequency resin adhesive layer are low-dielectric adhesive layers with Dk values of 2.00-3.50 10G Hz and Df values of 0.001-0.010 10G Hz.
3. The composite high-frequency substrate as set forth in claim 1, wherein: the first copper foil layer and the second copper foil layer are both one of an ED copper foil layer, an RA copper foil layer, an HA copper foil layer and an HA-V2 copper foil layer.
4. The composite high-frequency substrate as set forth in claim 1, wherein: the total thickness of the composite high-frequency substrate is 35-700 mu m, wherein the thicknesses of the first copper foil layer and the second copper foil layer are both 6-70 mu m; the thickness of the third high-frequency resin adhesive layer is 5-50 mu m; the thickness of the low dielectric film layer is 8-100 μm.
5. The composite high-frequency substrate as set forth in claim 1, wherein: both the first copper foil layer and the second copper foil layer are copper foil layers having a surface roughness RZ of 0.4 to 2.0 μm.
6. The composite high-frequency substrate as set forth in claim 1, wherein: the low dielectric film layer is a film with Dk value of 2.0-3.5 10GHz and Df value of 0.002-0.020 10GHz; the low dielectric film layer is one of a polyimide film layer, a modified polyimide film layer, a fluoroethylene-propylene copolymer film layer, a tetrafluoroethylene-perfluorovinyl ether copolymer film layer, a polytetrafluoroethylene film layer, a liquid crystal polymer film layer, a polyether-ether-ketone film layer, a polyphenyl ether film layer and a polyphenyl thioether film layer.
7. The composite high-frequency substrate as set forth in claim 1, wherein: the first high-frequency resin adhesive layer, the second high-frequency resin adhesive layer and the third high-frequency resin adhesive layer are made of at least one of fluororesin, epoxy resin, acrylic resin, urethane resin, thermosetting polyimide resin, silicone rubber resin, poly-p-xylylene resin, polycarbonate resin, special cyanoester, polysulfone resin, bismaleimide resin and polyimide resin, polyether sulfone, modified polyimide resin, liquid crystal polymer, polyether ether ketone, polyethylene, polystyrene, modified low dielectric BT resin, polyphenylene oxide, polyolefin and polytetrafluoroethylene.
8. The composite high-frequency substrate as set forth in claim 1, wherein: the overall water absorption of the composite high-frequency substrate is 0.1-1.0%; the overall CTE of the hybrid high frequency substrate is in the range of 5-50 ppm/DEG C.
9. The method for manufacturing a composite high-frequency substrate as claimed in any one of claims 1 to 8, wherein: the method comprises the following steps:
step one, preparing a composite structure film, coating a low dielectric film layer with a third high-frequency resin adhesive layer, laminating another low dielectric film layer, drying and curing;
step two, coating the material obtained in the step one on a first high-frequency resin adhesive layer, then laminating a first copper foil layer, drying and curing;
and step three, coating a second high-frequency resin adhesive layer on one surface, which is not the first copper foil layer, of the material obtained in the step two, then pressing the second copper foil layer, drying and curing to obtain the composite high-frequency substrate.
10. The method for manufacturing a composite high-frequency substrate as claimed in any one of claims 1 to 8, wherein: the method comprises the following steps:
step one, coating a third high-frequency resin adhesive layer on a low-dielectric thin film layer, then adhering the low-dielectric thin film layer to another low-dielectric thin film layer, and drying and curing the low-dielectric thin film layer;
step two, coating a third high-frequency resin adhesive layer on the material obtained in the step one, then adhering the material to another low-dielectric film layer, drying and curing, repeating the step N times, wherein N is a positive integer not less than 1;
step three, coating the material obtained in the step two on a first high-frequency resin adhesive layer, then laminating a first copper foil layer, drying and curing;
and step four, coating a second high-frequency resin adhesive layer on one surface, which is not the first copper foil layer, of the material obtained in the step three, then pressing the second copper foil layer, drying and curing to obtain the composite high-frequency substrate.
CN202110399435.8A 2021-04-14 2021-04-14 Composite high-frequency substrate and preparation method thereof Pending CN115209607A (en)

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TWI664086B (en) * 2018-01-18 2019-07-01 亞洲電材股份有限公司 Double-sided copper foil substrate with fluorine polymer and high frequency and high transmission characteristics and the preparation method thereof and composite
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