CN115207011A - Backplate, photosensitive circuit and display panel - Google Patents
Backplate, photosensitive circuit and display panel Download PDFInfo
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- CN115207011A CN115207011A CN202210564973.2A CN202210564973A CN115207011A CN 115207011 A CN115207011 A CN 115207011A CN 202210564973 A CN202210564973 A CN 202210564973A CN 115207011 A CN115207011 A CN 115207011A
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- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 47
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- 229920005591 polysilicon Polymers 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 6
- 238000005224 laser annealing Methods 0.000 claims description 5
- 239000002210 silicon-based material Substances 0.000 claims description 5
- 230000002452 interceptive effect Effects 0.000 abstract description 8
- 230000007547 defect Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 66
- 239000010949 copper Substances 0.000 description 40
- 239000010936 titanium Substances 0.000 description 24
- 229910052751 metal Inorganic materials 0.000 description 23
- 239000002184 metal Substances 0.000 description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 20
- 229910052802 copper Inorganic materials 0.000 description 20
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 15
- 229910052750 molybdenum Inorganic materials 0.000 description 15
- 239000011733 molybdenum Substances 0.000 description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 12
- 229910052719 titanium Inorganic materials 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 229910016027 MoTi Inorganic materials 0.000 description 8
- ZPZCREMGFMRIRR-UHFFFAOYSA-N molybdenum titanium Chemical compound [Ti].[Mo] ZPZCREMGFMRIRR-UHFFFAOYSA-N 0.000 description 8
- 238000002161 passivation Methods 0.000 description 7
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
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- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Abstract
The invention provides a backboard, a photosensitive circuit and a display panel, wherein the backboard comprises a driving unit and a photosensitive unit, the photosensitive unit comprises a photosensitive subunit and an optical reading subunit, the photosensitive subunit comprises an amorphous silicon thin film transistor, the optical reading subunit comprises a first polycrystalline silicon thin film transistor, and the driving unit comprises a second polycrystalline silicon thin film transistor. According to the invention, the light sensing sensor is set as the amorphous silicon thin film transistor, the light reading sensor and the driving sensor are set as the polycrystalline silicon thin film transistor, and the light sensing unit and the driving unit are simultaneously integrated in the backboard by utilizing the good compatibility of the amorphous silicon thin film transistor and the polycrystalline silicon thin film transistor, so that the high-mobility backboard with the functions of light sensing and driving is constructed, the problem that the light sensing backboard of the existing remote interactive display device has light sensing characteristics and backboard characteristics which are difficult to combine is solved, and the defects of high cost, complex flow and the like of the traditional externally-hung light sensing sensor are avoided.
Description
Technical Field
The application relates to the field of display, especially, relate to a backplate, photosensitive circuit and display panel.
Background
In the current display industry, human-computer interaction becomes an important direction for the development of novel display technologies, and the addition of various sensors provides more possibilities for different types of human-computer interaction functions.
The integration of the light sensor in the display panel provides a new solution for remote interaction. Amorphous silicon (a-Si) is a good photosensitive material, but due to the limitation of material characteristics, the mobility and on-state current are low, and the requirement of a back plate of a high-order product cannot be met. At present, a back plate with higher mobility is required for a novel self-luminous display panel, however, an oxide thin film transistor (IGZO) with high mobility has a main photosensitive range of blue light and ultraviolet light, has a poor sensing effect on green light and red light, and has poor process compatibility with an amorphous silicon thin film transistor; low temperature polysilicon thin film transistors (LTPS) having high mobility have poor photosensitivity and poor in-plane uniformity due to limitations of crystallization techniques.
Therefore, the light sensing backboard of the existing remote interactive display device has the problem that the light sensing characteristic and the backboard characteristic are difficult to be compatible.
Disclosure of Invention
The invention provides a back plate, a photosensitive circuit and a display panel, and aims to solve the problem that the photosensitive characteristic and the back plate characteristic of a light sensing back plate of an existing remote interactive display device are difficult to combine.
In order to solve the above problems, the technical scheme provided by the invention is as follows:
the invention provides a backboard, which comprises a driving unit and a photosensitive unit, wherein the photosensitive unit comprises a light sensing subunit and a light reading subunit, the light sensing subunit comprises an amorphous silicon thin film transistor, the light reading subunit comprises a first polycrystalline silicon thin film transistor, and the driving unit comprises a second polycrystalline silicon thin film transistor.
Optionally, in some embodiments of the present invention, the active region of the first polysilicon thin film transistor, the active region of the second polysilicon thin film transistor, and the active region of the amorphous silicon thin film transistor are disposed in the same layer.
Optionally, in some embodiments of the present invention, the channel of the first polysilicon thin film transistor and the channel of the second polysilicon thin film transistor are obtained by processing an amorphous silicon material by using a blue laser annealing process.
Optionally, in some embodiments of the present invention, the back plate further includes a light shielding layer, and the light shielding layer is disposed on the light sensing side of the substrate and covers the channel of the first polysilicon thin film transistor and the channel of the second polysilicon thin film transistor.
Optionally, in some embodiments of the present invention, the amorphous silicon thin film transistor and the first polysilicon thin film transistor are both N-type thin film transistors.
Optionally, in some embodiments of the present invention, an output terminal of the amorphous silicon thin film transistor is connected to a gate of the first polysilicon thin film transistor.
Optionally, in some embodiments of the present invention, the amorphous silicon thin film transistor is a bottom gate structure, and the first polysilicon thin film transistor and the second polysilicon thin film transistor are a top gate structure or a bottom gate structure; the back plate further comprises a shading electrode, and the shading electrode is arranged on one side, away from the grid electrode, of the active region of the second polycrystalline silicon thin film transistor and is electrically connected with the source electrode or the drain electrode of the second polycrystalline silicon thin film transistor; the grid electrode of the amorphous silicon thin film transistor and the shading electrode are arranged on the same layer and are made of the same material.
Optionally, in some embodiments of the present invention, the source and drain of the second polysilicon thin film transistor, the source and drain of the first polysilicon thin film transistor, and the source and drain of the amorphous silicon thin film transistor are disposed in the same layer and have the same material.
The invention also provides a photosensitive circuit, which comprises a photosensitive thin film transistor and an optical reading thin film transistor, wherein the grid electrode of the photosensitive thin film transistor is connected with a grid signal, the first pole of the photosensitive thin film transistor and the first pole of the optical reading thin film transistor are connected with a power supply signal, and the second pole of the photosensitive thin film transistor is electrically connected with the grid electrode of the optical reading thin film transistor;
the light sensing thin film transistor and the light reading thin film transistor are both N-type thin film transistors.
Meanwhile, the invention also provides a display panel, which comprises the back plate in any embodiment of the invention.
The invention provides a backboard, a photosensitive circuit and a display panel, wherein an amorphous silicon thin film transistor is set as a light sensing sensor, a first polycrystalline silicon thin film transistor is set as a light reading sensor, a first polycrystalline silicon thin film transistor is set as a driving sensor, and a photosensitive unit and a driving unit are simultaneously integrated in the backboard by utilizing the good compatibility of the amorphous silicon thin film transistor and the polycrystalline silicon thin film transistor, so that the high-mobility backboard with both photosensitive and driving functions is constructed, the problem that the photosensitive characteristic and the backboard characteristic of the existing light sensing backboard of a remote interactive display device are difficult to combine is solved, and the defects of high cost, complex flow and the like of the traditional externally-hung photosensitive sensor are avoided.
Drawings
The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a backplane according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a back plate according to an embodiment of the present invention;
fig. 3 is a diagram of a photosensitive circuit according to an embodiment of the invention.
Detailed Description
While the embodiments and/or examples of the present invention will be described in detail and fully with reference to the specific embodiments thereof, it should be understood that the embodiments and/or examples described below are only a part of the embodiments and/or examples of the present invention and are not intended to limit the scope of the invention. All other embodiments and/or examples, which can be obtained by a person skilled in the art without making any inventive step, based on the embodiments and/or examples of the present invention, belong to the scope of protection of the present invention.
Directional terms used in the present invention, such as [ upper ], [ lower ], [ left ], [ right ], [ front ], [ rear ], [ inner ], [ outer ], [ side ], are only referring to the directions of the attached drawings. Accordingly, the directional terminology is used for the purpose of describing and understanding the invention and is in no way limiting. The terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature.
The embodiment of the invention provides a backboard, aiming at solving the problem that the light sensing backboard of the existing remote interactive display device has light sensing characteristics and backboard characteristics which are difficult to combine.
In an embodiment, please refer to fig. 1, where fig. 1 shows a schematic structural diagram of a backplane provided in an embodiment of the present invention. As shown in the figures, the backplane provided by the embodiment of the present invention includes a driving unit and a photosensitive unit, where the photosensitive unit includes a photo sensing subunit and a photo reading subunit, the photo sensing subunit includes an amorphous silicon thin film transistor T1, the photo reading unit includes a first polysilicon thin film transistor T2, and the driving unit includes a second polysilicon thin film transistor T3.
According to the embodiment of the invention, the amorphous silicon thin film transistor is set as the light sensing sensor, the first polycrystalline silicon thin film transistor is set as the light reading sensor, the first polycrystalline silicon thin film transistor is set as the driving sensor, and the light sensing unit and the driving unit are simultaneously integrated in the backboard by utilizing the good compatibility of the amorphous silicon thin film transistor and the polycrystalline silicon thin film transistor, so that the high-mobility backboard with the light sensing and driving functions is constructed, the problem that the light sensing characteristic and the backboard characteristic of the light sensing backboard of the existing remote interactive display device are difficult to combine is solved, and the defects of high cost, complex flow and the like of the traditional externally-hung light sensing sensor are avoided.
In one embodiment, as shown in fig. 1, the back plate comprises, in order from bottom to top: the semiconductor device comprises a substrate 11, a first metal layer 12, a buffer layer 13, a semiconductor active layer 14, a gate insulating layer 15, a second metal layer 16, an interlayer insulating layer 17, a third metal layer 18, a passivation layer 19, an electrode layer 20 and a light shielding layer 21.
Specifically, the substrate 11 may be a rigid substrate such as a glass substrate, or may be a flexible substrate such as a polyimide substrate. The buffer layer 13, the gate insulating layer 15, the interlayer insulating layer 17, and the passivation layer 19 are all insulating film layers for blocking adjacent metal film layers, and the materials of the buffer layer 13, the gate insulating layer 15, the interlayer insulating layer 17, and the passivation layer 19 include, but are not limited to, any one of silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiNOx), silicon nitride/silicon oxide (SiNx/SiOx), aluminum oxide/silicon nitride/silicon oxide (Al 2O 3/SiNx/SiOx), and silicon oxide/silicon nitride/silicon oxide (SiOx/SiNx/SiOx).
The first metal layer 12, the semiconductor active layer 14, the second metal layer 16, and the third metal layer 18 form the amorphous silicon thin film transistor T1, the first polysilicon thin film transistor T2, and the second polysilicon thin film transistor T3. The amorphous silicon thin film transistor T1 is a thin film transistor with a bottom gate structure, and the first polycrystalline silicon thin film transistor T2 and the second polycrystalline silicon thin film transistor T3 are thin film transistors with a top gate structure.
Specifically, the first metal layer 12 includes a light-shielding electrode 121 and a gate electrode 122 of the amorphous silicon thin film transistor T1, and the material of the first metal layer 12 includes, but is not limited to, molybdenum (Mo), molybdenum/aluminum (Mo/Al), molybdenum/copper (Mo/Cu), molybdenum titanium/copper/molybdenum titanium (MoTi/Cu/MoTi), titanium/aluminum/titanium (Ti/Al/Ti), titanium/copper/titanium (Ti/Cu/Ti), molybdenum/copper/indium tin oxide (Mo/Cu/ITO), molybdenum/copper/indium zinc oxide (Mo/Cu/IZO), indium tin oxide/copper/indium zinc oxide (IZO/Cu/IZO).
The semiconductor active layer 14 includes an active region 143 of the amorphous silicon thin film transistor T1, an active region 142 of the first polycrystalline silicon thin film transistor T2, and the second polycrystalline silicon thin film transistor T3 is an active region 141, the active region 143 is made of a material responsive to visible light intensity, such as amorphous silicon (a-Si), the active region 142 of the first polycrystalline silicon thin film transistor T2 and the second polycrystalline silicon thin film transistor T3 are made of polycrystalline silicon (poly-Si), the active region 142 and the active region 141 respectively include a channel region and doped regions located at both sides of the channel region.
The second metal layer 16 includes a gate electrode 162 of the first polysilicon thin film transistor T2 and a gate electrode 161 of the second polysilicon thin film transistor T3, and the material of the second metal layer 16 is similar to that of the first metal layer 12, including but not limited to molybdenum (Mo), molybdenum/aluminum (Mo/Al), molybdenum/copper (Mo/Cu), molybdenum titanium/copper (MoTi/Cu), molybdenum titanium/copper/molybdenum titanium (MoTi/Cu/MoTi), titanium/aluminum/titanium (Ti/Al/Ti), titanium/copper/titanium (Ti/Cu/Ti), molybdenum/copper/indium tin oxide (Mo/Cu/ITO), molybdenum/copper/indium zinc oxide (Mo/Cu/IZO), indium tin oxide/copper/indium zinc oxide (IZO/Cu/IZO).
The third metal layer 18 includes a source/drain 183 of the amorphous silicon thin film transistor T1, a source/drain 182 of the first polysilicon thin film transistor T2, and a source/drain 181 of the second polysilicon thin film transistor T3, the source and drain of the amorphous silicon thin film transistor T1 are respectively connected to two ends of the active region 143, and the source or drain of the amorphous silicon thin film transistor T1 is electrically connected to the gate of the first polysilicon thin film transistor T2; the source and the drain of the first polysilicon thin film transistor T2 are connected to the doped regions at the two ends of the active region 142 through via holes, respectively; the source and the drain of the second polysilicon thin film transistor T3 are respectively connected to the doped regions at both ends of the active region 141 through via holes, and the source or the drain of the second polysilicon thin film transistor T3 is simultaneously connected to the light-shielding electrode 121 through a via hole. The shading electrode 121 is used for shading light rays which are emitted into a channel of the second polycrystalline silicon thin film transistor T3 from the substrate side, and meanwhile, the shading electrode 121 is connected with a source electrode or a drain electrode of the second polycrystalline silicon thin film transistor T3, so that threshold voltage drift of the second polycrystalline silicon thin film transistor T3 and a coupling phenomenon between the shading electrode 121 and a source electrode and a drain electrode of the second polycrystalline silicon thin film transistor T3 are prevented, and the driving characteristic of the second polycrystalline silicon thin film transistor T3 is ensured. The material of the third metal layer 18 is similar to that of the first metal layer 12, including but not limited to molybdenum (Mo), molybdenum/aluminum (Mo/Al), molybdenum/copper (Mo/Cu), molybdenum titanium/copper (MoTi/Cu), molybdenum titanium/copper/molybdenum titanium (MoTi/Cu/MoTi), titanium/aluminum/titanium (Ti/Al/Ti), titanium/copper/titanium (Ti/Cu/Ti), molybdenum/copper/indium tin oxide (Mo/Cu/ITO), molybdenum/copper/indium zinc oxide (Mo/Cu/IZO), indium tin oxide/copper/indium zinc oxide (IZO/Cu/IZO).
The light shielding layer 21 is provided on the passivation layer 19 and includes a first light shielding portion 211 and a second light shielding portion 212. The first light shielding part 211 is located on the second polysilicon thin film transistor T3 and covers a channel region of the second polysilicon thin film transistor T3, and the first light shielding part 211 is used for shielding the influence of external light or laser pen light on the second polysilicon thin film transistor T3; the second light shielding portion 212 is located on the first polysilicon thin film transistor T2 and covers a channel region of the first polysilicon thin film transistor T2, and the second light shielding portion 212 is used for shielding an influence of an external light or a laser pointer light on the first polysilicon thin film transistor T2. The first light shielding portion 211 and the second light shielding portion 212 may be provided in series or at an interval. The material of the light shielding layer 21 includes, but is not limited to, a black photoresist material, and the thickness of the light shielding layer 21 ranges from 1 micron to 3 microns.
Accordingly, an embodiment of the present invention provides a method for manufacturing a backplane, please refer to fig. 2, and fig. 2 shows a schematic diagram of a manufacturing structure of the backplane according to the embodiment of the present invention, and as shown in fig. 2, the method includes:
step 1, providing a substrate 11; preparing a first metal layer 12 on a substrate 11; patterning the first metal layer 12 to obtain a gate 122 and a light-shielding electrode 121 of an amorphous silicon thin film transistor; please refer to fig. 2 (a).
Step 2, preparing a buffer layer 13 on the first metal layer 12 by adopting a chemical vapor deposition method; preparing a semiconductor active layer 14 on the buffer layer 13, wherein the semiconductor active layer 14 is made of a photosensitive material such as amorphous silicon and the like with visible light intensity response; patterning the semiconductor active layer 14 to obtain an active region 143 of an amorphous silicon thin film transistor, an active region 142 of a first polycrystalline silicon thin film transistor and an active region 141 of a second polycrystalline silicon thin film transistor; the active region 142 and the active region 141 are processed by adopting a blue laser annealing process to obtain the active region 142 and the active region 141 of the polycrystalline silicon material, the blue laser annealing process (BLA) is more compatible with a preparation process of amorphous silicon, the active region 143 of the amorphous silicon material and the active region 142 and the active region 141 of the polycrystalline silicon material can be prepared in the same backboard structure, in addition, the penetration depth of laser in the blue laser annealing process is deeper, and the polycrystalline silicon thin film with high crystallinity, large grain size and no grain boundary bulge can be obtained, so that the high mobility and excellent folding resistance of the thin film transistor are realized; please specifically refer to fig. 2 (b).
Step 3, preparing a gate insulating layer 15 on the active region 142 and the active region 141; preparing a second metal layer 16 on the gate insulating layer 15, and patterning the second metal layer 16 to obtain a gate 162 of the first polysilicon thin film transistor and a gate 161 of the second polysilicon thin film transistor; performing N-type doping on two ends of the active region 142 by taking the gate 162 as a photomask in a self-alignment manner, and performing doping on two ends of the active region 141 by taking the gate 161 as a photomask in a self-alignment manner; please specifically refer to fig. 2 (c).
Step 4, preparing an interlayer insulating layer 17 on the gate electrode layer 16; preparing a third metal layer 18 on the interlayer insulating layer 17, and patterning the third metal layer 18 to obtain a source drain 183 of the amorphous silicon thin film transistor, a source drain 182 of the first polycrystalline silicon thin film transistor and a source drain 181 of the second polycrystalline silicon thin film transistor; please specifically refer to (d) of fig. 2.
Step 5, preparing a passivation layer 19 on the third metal layer 18; preparing an electrode layer 20 on the passivation layer 19; please specifically refer to fig. 2 (e).
Step 6, preparing a light shielding layer 21 on the passivation layer 19, and patterning the light shielding layer 21 to obtain a first light shielding portion 211 and a second light shielding portion 212; please refer to fig. 2 (f).
Meanwhile, an embodiment of the present invention further provides a photosensitive circuit, as shown in fig. 3, the photosensitive circuit includes:
the light sensing thin film transistor comprises a light sensing thin film transistor T1 and a light reading thin film transistor T2, wherein a grid electrode of the light sensing thin film transistor T1 is connected with a grid electrode signal Gate, a first electrode of the light sensing thin film transistor T1 and a first electrode of the light reading thin film transistor T2 are connected with a power supply signal VDD, and a second electrode of the light sensing thin film transistor T1 is electrically connected with a grid electrode of the light reading thin film transistor T2;
the light sensing thin film transistor T1 is an amorphous silicon thin film transistor, and the light reading thin film transistor T2 is an N-type polycrystalline silicon thin film transistor.
The light sensing thin film transistor T1 works in a TFT off-state area, and due to the fact that the off-state current of amorphous silicon is small, the grid voltage of the light reading thin film transistor T2 is small, and the light reading thin film transistor T2 is in an off state. When the light sensing thin film transistor T1 receives illumination, the amorphous silicon is excited to generate photocurrent, so that the grid voltage of the light reading thin film transistor T2 is increased, the light reading thin film transistor T2 is conducted, and therefore the power supply signal VDD of the first electrode side of the light reading thin film transistor T2 is read and transmitted to the second electrode of the light reading thin film transistor T2, and further sensed by an external circuit. By reading the electrical signal of the second electrode side of the optical reading thin film transistor T2, the external optical signal can be determined, and the position information of the external optical signal can be determined.
Through set up the matrix structure in the backplate photosensitive circuit can realize the initiative location to external visible light laser signal position to satisfy the long-range interaction of laser, improve display panel's interactive performance.
The embodiment of the present invention further provides a display panel, where the display panel includes the backplane and the photosensitive circuit according to any one of the embodiments of the present invention, so that the technical features and the beneficial effects of the backplane and the photosensitive circuit according to any one of the embodiments of the present invention are provided.
In summary, the embodiments of the present invention provide a backplane, a photosensitive circuit, and a display panel, in which an amorphous silicon thin film transistor is set as a light sensing sensor, a first polysilicon thin film transistor is set as a light reading sensor, and a first polysilicon thin film transistor is set as a driving sensor, and a photosensitive unit and a driving unit are simultaneously integrated in the backplane by using good compatibility of the amorphous silicon thin film transistor and the polysilicon thin film transistor, so as to construct a high mobility backplane having both photosensitive and driving functions, thereby solving the problem that the photosensitive property and the backplane property of the existing light sensing backplane of a remote interactive display device are difficult to be compatible, and avoiding the disadvantages of high cost, complex flow, and the like of a conventional externally-mounted photosensitive sensor. Through the photosensitive circuit of the matrix structure, the active positioning of the external visible light laser signal position is realized, the laser remote interaction is realized, and the interaction performance of the display panel is improved.
The backplane, the photosensitive circuit and the display panel provided by the embodiment of the present invention are described in detail above, and a specific example is applied in the present disclosure to explain the principle and the embodiment of the present invention, and the description of the above embodiment is only used to help understanding the method and the core idea of the present invention; meanwhile, for those skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (10)
1. A backboard is characterized by comprising a driving unit and a photosensitive unit, wherein the photosensitive unit comprises a light sensing subunit and a light reading subunit, the light sensing subunit comprises an amorphous silicon thin film transistor, the light reading subunit comprises a first polycrystalline silicon thin film transistor, and the driving unit comprises a second polycrystalline silicon thin film transistor.
2. The backplane of claim 1, wherein the active region of the first polysilicon thin film transistor, the active region of the second polysilicon thin film transistor, and the active region of the amorphous silicon thin film transistor are disposed in a same layer.
3. The backplane of claim 2, wherein the channel of the first polysilicon thin film transistor and the channel of the second polysilicon thin film transistor are formed by processing an amorphous silicon material using a blue laser annealing process.
4. The backplane of claim 1, further comprising a light-shielding layer disposed on a light-sensing side of the substrate and covering the channels of the first and second polysilicon thin film transistors.
5. The backplane of claim 1, wherein the first polysilicon thin film transistor is an N-type thin film transistor.
6. The backplane of claim 5, wherein an output of the amorphous silicon thin film transistor is connected to a gate of the first polysilicon thin film transistor.
7. The backplane of claim 4, wherein the amorphous silicon thin film transistor is a bottom gate structure, and the first polysilicon thin film transistor and the second polysilicon thin film transistor are a top gate structure or a bottom gate structure; the back plate further comprises a shading electrode, and the shading electrode is arranged on one side, away from the grid electrode, of the active region of the second polycrystalline silicon thin film transistor and is electrically connected with the source electrode or the drain electrode of the second polycrystalline silicon thin film transistor; the grid electrode of the amorphous silicon thin film transistor and the shading electrode are arranged on the same layer and are made of the same material.
8. The backplane according to claim 7, wherein the source drain of the second polysilicon thin film transistor, the source drain of the first polysilicon thin film transistor, and the source drain of the amorphous silicon thin film transistor are disposed in the same layer and have the same material.
9. A photosensitive circuit is characterized by comprising a photosensitive thin film transistor and an optical reading thin film transistor, wherein a grid electrode of the photosensitive thin film transistor is connected with a grid electrode signal, a first electrode of the photosensitive thin film transistor and a first electrode of the optical reading thin film transistor are connected with a power supply signal, and a second electrode of the photosensitive thin film transistor is electrically connected with the grid electrode of the optical reading thin film transistor;
the light sensing thin film transistor is an amorphous silicon thin film transistor, and the light reading thin film transistor is an N-type polycrystalline silicon thin film transistor.
10. A display panel comprising the back sheet according to any one of claims 1 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210564973.2A CN115207011A (en) | 2022-05-23 | 2022-05-23 | Backplate, photosensitive circuit and display panel |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210564973.2A CN115207011A (en) | 2022-05-23 | 2022-05-23 | Backplate, photosensitive circuit and display panel |
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| CN115207011A true CN115207011A (en) | 2022-10-18 |
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| CN202210564973.2A Pending CN115207011A (en) | 2022-05-23 | 2022-05-23 | Backplate, photosensitive circuit and display panel |
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- 2022-05-23 CN CN202210564973.2A patent/CN115207011A/en active Pending
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