CN115193983A - Manufacturing method and device of spherical surface retardation potential analyzer - Google Patents

Abstract

The invention discloses a manufacturing method of a spherical retardation analyzer, which comprises the steps of firstly processing a metal plate by adopting punch forming and heat treatment setting to obtain a spherical profile, then obtaining a thin spherical profile by adopting electrochemical etching processing, then obtaining a spherical grid electrode assembly by adopting ultrafast laser etching processing, finally obtaining a shell and a collector by adopting a machining method, and assembling the spherical grid electrode assembly and the collector on the shell to obtain the spherical retardation analyzer; according to the scheme, the thin spherical structural part is obtained through electrochemical etching, the shape precision of the spherical surface processed by the grid hole is guaranteed to the maximum extent, then the spherical grid component with high shape precision and high grid hole coaxial assembly precision is obtained through ultrafast laser etching aiming at the characteristic that the thin wall is easy to deform, then the spherical retardation analyzer with the spherical grid component is obtained through assembly, and accurate measurement of charged particle energy in the ionic liquid electrospray thruster is achieved through the spherical grid component.

Description

Manufacturing method and device of spherical surface retardation potential analyzer

Technical Field

The invention relates to the technical field of energy analysis, in particular to a manufacturing method of a spherical surface retardation potential analyzer. In addition, the invention also relates to a spherical retardation potential analyzer device manufactured by the manufacturing method of the spherical retardation potential analyzer.

Background

The ionic liquid electrospray thruster is an electrostatic type electric thruster which takes ionic liquid as propellant working medium, and utilizes an electrostatic field to extract ions with corresponding polarities from the propellant and accelerate the ions. The extracted ions comprise monomers and ion clusters (dimers, trimers and even other multimers) that may break down to form new ions/ion clusters and neutral molecules under the influence of the electrostatic field between the extraction grid and the emitter. The ion cluster breakage has important influence on the performance of the thruster, and the understanding of the breakage rate of the ion clusters in an acceleration zone has important significance on propellant selection and thruster optimization design. The method is an effective method for obtaining the ion cluster breakage rate by accurately measuring the charged particle energy distribution in the beam by adopting a retardation potential analyzer.

A Retardation Potential Analyzer (RPA) is a measuring device used to measure the ion energy distribution in a plasma. Typically, an RPA consists of at least 3 planar gates and 1 collector, with the center gate acting as a blocking gate and the remaining two gates grounded. By applying a bias voltage (V) to the blocking gate by scanning, an equipotential surface is established between adjacent grounded gates, forming a charged particle barrier, allowing only charged particles with an energy E ≧ qV to pass through and eventually reach the collector. The bias voltage is scanned, the collected current and the corresponding blocking grid scanning voltage form an I-V curve, and the energy distribution of the charged particles can be obtained by analyzing the curve. However, the beam current of the ionic liquid electrospray thruster has a certain divergence, if a planar RPA is adopted, an included angle θ exists between the flight direction of the charged particles entering the RPA and the direction of the retarding electric field, and the retarding electric field can only retard the velocity component of the charged particles along the direction of the electric field, and the velocity component perpendicular to the direction of the electric field is not changed. Therefore, the actual cutoff energy of a charged particle is related to its incident angle θ degrees, resulting in a measurement error related to the incident angle θ. If the incident angle theta is known, the measurement result can be corrected, but the particle incident direction in actual measurement cannot be accurately measured.

Aiming at the problem of measurement error, the flight starting position of the charged particles is positioned at the sphere center of the grid component by adopting a concentric hemispherical grid structure, and the incident direction of the charged particles is always consistent with the direction of a retarding electric field, so that the error caused by the divergence of particle beam beams is eliminated. However, the processing of the spherical gate is difficult, in order to ensure high particle transmittance, the gate is generally made of a thin conductor material, the thickness is in the order of tens of microns to hundreds of microns, the axis of the gate hole on the gate is consistent with the normal direction of the spherical surface and points to the center of the sphere, and meanwhile, the line width between the gate holes is in the order of tens of microns. The hole forming of the planar grid is relatively simple, but the method of forming the grid with the holes formed first into the spherical grid is easy to cause the breakage among grid holes, and the yield is extremely low; and because the non-elastic deformation occurs in the forming process, the cross section size of the gate hole is changed compared with that of a planar gate, and when the gate assembly is assembled, the gate holes at the same positions on the gates are difficult to ensure higher coaxial assembly precision, so that the charged particle energy measurement precision is low.

Disclosure of Invention

The invention provides a manufacturing method and a device of a spherical retardation analyzer, which are used for solving the technical problems that a planar grid assembly in the retardation analyzer has an incident angle deviation and cannot accurately measure the charged particle energy distribution in an ionic liquid electrospray thruster, and a spherical grid assembly has high processing difficulty and difficult guarantee of coaxial assembly precision and cannot measure the charged particle energy distribution in the ionic liquid electrospray thruster at high precision.

According to an aspect of the present invention, there is provided a method of manufacturing a spherical retardation potential analyzer, comprising the steps of: s1, processing a metal plate by adopting punch forming and heat treatment setting to obtain a spherical configuration piece, wherein the spherical configuration piece comprises an edge frame and a central spherical surface; s2, etching a grid hole processing spherical surface on the central spherical surface by adopting electrochemical etching to obtain a thin spherical structural member; s3, etching a grid hole array on the grid hole processing spherical surface of the thin spherical structural part by adopting ultra-fast laser etching to obtain a spherical grid component; and S4, obtaining the shell and the collector by adopting a machining method, and assembling the spherical grid component and the collector on the shell to obtain the spherical retardation analyzer.

As a further improvement of the above technical solution:

further, step S2 specifically includes the following steps: s201, cleaning the spherical profile, spraying photoresist, drying for more than 30 minutes in an environment with the temperature less than 80 ℃, and then carrying out exposure treatment by adopting ultraviolet light so as to immerse the spherical profile into developing solution to expose the outline of a region to be processed; s202, placing the exposed and developed spherical structural part into etching liquid for electrochemical etching, and controlling the reaction time according to the reaction rate of the metal plate and the etching liquid to realize accurate control of the thickness of the grid hole machining spherical surface so as to obtain a grid hole machining spherical surface with the thickness meeting the requirement; and S203, cleaning the thin spherical structural member after the grid hole machining spherical surface etching is finished, and removing the photoresist.

Further, step S3 specifically includes the following steps: s311, a plurality of Bao Qiumian structural members are stacked and fixed through edge frames and insulating gaskets arranged between two adjacent edge frames; s312, etching by adopting ultrafast laser, and sequentially finishing hole machining of corresponding positions of the thin spherical structural parts on the same axis by adjusting the focal depth of the laser or the position of the laser; and S312, repeating the step S312 until the grid hole array is processed, so as to obtain the spherical grid electrode assembly.

Further, step S3 specifically includes the following steps: s321, processing a grid hole array on the grid hole processing spherical surface by using the central position of the grid hole processing spherical surface as a positioning reference by adopting an ultrafast laser etching process, and processing at least two positioning holes on the edge frame by using the central position of the grid hole processing spherical surface as a positioning reference to obtain a spherical grid electrode; and S322, repeating the step S321, sequentially obtaining a plurality of spherical grids, and stacking and fixing the plurality of spherical grids through the positioning holes and the insulating gaskets arranged between the two adjacent edge frames to obtain the spherical grid assembly.

Further, the method between step S3 and step S4 further comprises the steps of: and cleaning the spherical grid electrode assembly by adopting an ultrasonic cleaning method, and then removing burrs in the laser processing process of the surface of the spherical grid electrode assembly by adopting electrochemical polishing.

Furthermore, the holes of the grid holes in the grid hole array are arranged in a square shape; and/or the cross section size range of the grid holes in the grid hole array is 0.3-0.5mm, and the line width range between two adjacent grid holes is 0.04-0.06mm.

Further, press forming is employed in step S1 to punch fitting holes in the edge frame.

Further, in step S2, an electrochemical etching is used to etch the mounting hole in the edge frame.

Further, step S1 is preceded by the step of: and S0, designing and obtaining a corresponding stamping die and a metal plate according to the design curvature and the geometric dimension of the required grid.

According to another aspect of the invention, a spherical surface retardation potential analyzer device is also provided, which is manufactured by adopting the manufacturing method of the spherical surface retardation potential analyzer.

The invention has the following beneficial effects:

the manufacturing method of the spherical surface retardation analyzer comprises the steps of firstly processing a metal plate by adopting punch forming and heat treatment setting to obtain a spherical structural part with an edge frame and a central spherical surface, then etching a grid hole processing spherical surface on the central spherical surface by adopting an electrochemical etching method to obtain a thin spherical structural part, and ensuring the shape precision of the grid hole processing spherical surface to the maximum extent in electrochemical etching contact stress; then, etching a grid hole array on the grid hole processing spherical surface of the thin spherical structural part by adopting an ultrafast laser etching process to obtain a spherical grid component, wherein the ultrafast laser etching can realize submicron processing precision, has an effect similar to cold processing, can effectively avoid deformation caused by the heat effect of the traditional conventional laser, and ensures the processing precision of the grid hole array and the spherical configuration; finally, obtaining a shell and a collector by adopting a machining method, and assembling a spherical grid component and the collector on the shell to obtain a spherical retardation analyzer; according to the scheme, firstly, spherical surface forming is carried out, then grid hole array processing is carried out, so that a spherical surface type grid electrode assembly is obtained, in the processing process, a thin spherical surface structural piece is obtained through electrochemical etching, the shape accuracy of the spherical surface processed through the grid holes is guaranteed to the maximum degree, then, aiming at the characteristic that the thin wall is easy to deform, ultrafast laser is adopted for carrying out etching processing on the grid hole array, so that the spherical surface type grid electrode assembly with high spherical surface shape accuracy and high grid hole coaxial assembly accuracy is obtained, then, a spherical surface retardation potential analyzer with the spherical surface type grid electrode assembly is obtained through assembly, and high-accuracy measurement of charged particle energy in the ionic liquid electrospray thruster is achieved through the spherical surface type grid electrode assembly.

In addition to the objects, features and advantages described above, other objects, features and advantages of the present invention are also provided. The present invention will be described in further detail below with reference to the accompanying drawings.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the invention and, together with the description, serve to explain the invention and not to limit the invention. In the drawings:

FIG. 1 is a block diagram of the steps of a method of manufacturing a spherical retardation potential analyzer in accordance with a preferred embodiment of the present invention;

FIG. 2 is a schematic view of the processing of S1 in the method of manufacturing the spherical retardation analyzer according to the preferred embodiment of the present invention;

FIG. 3 is a schematic view of the processing of S2 in the method for manufacturing the spherical retardation analyzer according to the preferred embodiment of the present invention;

FIG. 4 is a schematic view of the processing of S3 in the method of manufacturing the spherical retardation analyzer according to the preferred embodiment of the present invention;

FIG. 5 is a schematic view of the processing of S3 in the method of manufacturing the spherical retardation analyzer according to the preferred embodiment of the present invention;

FIG. 6 is a schematic view of the processing of S3 in the method of manufacturing the spherical retardation analyzer according to the preferred embodiment of the present invention;

fig. 7 is a schematic view of the processing of S4 in the method for manufacturing the spherical retardation potential analyzer according to the preferred embodiment of the present invention.

Detailed Description

The embodiments of the invention will be described in detail below with reference to the drawings, but the invention can be practiced in many different ways, which are defined and covered by the following.

FIG. 1 is a block diagram of the steps of a method of manufacturing a spherical retardation potential analyzer in accordance with a preferred embodiment of the present invention; FIG. 2 is a schematic view of the processing of S1 in the method for manufacturing the spherical retardation analyzer according to the preferred embodiment of the present invention; FIG. 3 is a schematic view of the processing of S2 in the method of manufacturing the spherical retardation analyzer according to the preferred embodiment of the present invention; FIG. 4 is a schematic view of the processing of S3 in the method for manufacturing the spherical retardation analyzer according to the preferred embodiment of the present invention; FIG. 5 is a schematic view of the processing of S3 in the method of manufacturing the spherical retardation analyzer according to the preferred embodiment of the present invention; FIG. 6 is a schematic view of the processing of S3 in the method of manufacturing the spherical retardation analyzer according to the preferred embodiment of the present invention; fig. 7 is a schematic view of the processing of S4 in the method for manufacturing the spherical retardation potential analyzer according to the preferred embodiment of the present invention.

As shown in fig. 1 to 7, the method for manufacturing the spherical retardation analyzer of the present embodiment includes the following steps: s1, processing a metal plate by adopting punch forming and heat treatment setting to obtain a spherical configuration piece, wherein the spherical configuration piece comprises an edge frame and a central spherical surface; s2, etching a grid hole processing spherical surface on the central spherical surface by adopting electrochemical etching to obtain a thin spherical structural member; s3, etching a grid hole array on the grid hole processing spherical surface of the thin spherical structural part by adopting ultrafast laser to obtain a spherical grid component; and S4, obtaining the shell and the collector by adopting a machining method, and assembling the spherical grid component and the collector on the shell to obtain the spherical retardation analyzer. Specifically, the manufacturing method of the spherical retardation analyzer comprises the steps of firstly, processing a metal plate by adopting punch forming and heat treatment setting to obtain a spherical structural part with an edge frame and a central spherical surface, then etching a grid hole processing spherical surface on the central spherical surface by adopting an electrochemical etching method to obtain a thin spherical structural part, and ensuring the shape accuracy of the grid hole processing spherical surface to the maximum extent in electrochemical etching contact stress, wherein the edge frame can improve the integral rigidity, inhibit the deformation of the grid hole processing spherical surface, is beneficial to maintaining the grid hole processing spherical surface and is convenient for assembling a follow-up spherical grid component; then, etching a grid hole array on the grid hole processing spherical surface of the thin spherical structural part by adopting an ultrafast laser etching process to obtain a spherical grid component, wherein the ultrafast laser etching can realize submicron processing precision, has an effect similar to cold processing, can effectively avoid deformation caused by the heat effect of the traditional conventional laser, and ensures the processing precision of the grid hole array and the spherical configuration; finally, obtaining the shell and the collector by adopting a machining method, and assembling the spherical grid component and the collector on the shell to obtain a spherical retardation analyzer; according to the scheme, firstly, spherical surface forming is carried out, then grid hole array processing is carried out, so that a spherical surface type grid electrode assembly is obtained, in the processing process, a thin spherical surface structural part is obtained through electrochemical etching, the shape accuracy of the spherical surface processed through the grid holes is guaranteed to the maximum extent, then, aiming at the characteristic that the thin wall is prone to deformation, ultrafast laser is adopted for carrying out etching processing on the grid hole array, so that the spherical surface type grid electrode assembly with high spherical surface shape accuracy and high grid hole coaxial assembly accuracy is obtained, then, a spherical surface retardation potential analyzer with the spherical surface type grid electrode assembly is obtained through assembly, and high-accuracy measurement of charged particle energy in the ionic liquid electrospray thruster is achieved through the spherical surface type grid electrode assembly. Optionally, the metal plate is made of tungsten, molybdenum and other materials resistant to particle erosion. It should be understood that the machining method in the present embodiment is well known to those skilled in the art, and will not be described herein in too much detail. Alternatively, the ultrafast laser process includes picosecond laser process and femtosecond laser process.

As shown in fig. 3, in this embodiment, the step S2 specifically includes the following steps: s201, cleaning the spherical profile, spraying photoresist, drying for more than 30 minutes in an environment with the temperature of less than 80 ℃, and then carrying out exposure treatment by adopting ultraviolet light so as to immerse into developing solution to expose the outline of the area to be processed; s202, placing the exposed and developed spherical structural part into etching liquid for electrochemical etching, and controlling reaction time according to the reaction rate of the metal plate and the etching liquid to realize accurate control of the thickness of the grid hole processing spherical surface so as to obtain a grid hole processing spherical surface with the thickness meeting the requirement; and S203, cleaning the thin spherical structural part after the grid hole machining spherical surface etching is finished, and removing the photoresist. Specifically, the center spherical surface of the spherical structural part is etched by adopting an electrochemical etching method to process the grid hole processing spherical surface with the thickness meeting the requirement, at the moment, the edge frame is thicker than the grid hole processing spherical surface to prevent the grid hole processing spherical surface from deforming in the subsequent processing or assembling process, the electrochemical etching processing efficiency is high, the processing cost is low, and meanwhile, the mechanical stress of mechanical processing does not exist, so that the shape precision of the grid hole processing spherical surface is favorably ensured. Preferably, the ideal thickness of the grid hole machining spherical surface is 0.08mm.

As shown in fig. 4 to 6, in this embodiment, the step S3 specifically includes the following steps: s311, a plurality of Bao Qiumian structural members are stacked and fixed through edge frames and insulating gaskets arranged between two adjacent edge frames; s312, etching by using ultrafast laser, and sequentially finishing hole machining at corresponding positions on the same axis on the thin spherical profile by adjusting the laser focal depth or the laser position; and S312, repeating the step S312 until the grid hole array is processed, so as to obtain the spherical grid electrode assembly. Specifically, after a plurality of thin spherical structural parts are assembled, an ultrafast laser is adopted to etch a grid hole array, and hole machining of corresponding positions on the thin spherical structural parts on the same axis is sequentially completed by adjusting the laser focal depth or the laser position so as to ensure the coaxiality of corresponding holes among the plurality of thin spherical structural parts, further increase the ion transmittance of the spherical grid component and improve the measurement accuracy of charged particle energy; in the assembling process, the electric insulation between the thin spherical configuration pieces is realized through the insulating gasket, and the phenomenon that the two adjacent thin spherical configuration pieces are conductive and the measurement of the energy of the charged particles cannot be realized is avoided. Optionally, the thickness of the insulating spacer ranges from 1mm to 5mm, and when the thickness of the insulating spacer is less than 1mm, discharge is easily generated between two adjacent thin spherical surfaces; when the thickness of the insulating spacer is larger than 5mm, the movement time of charged particles in the spherical grid assembly is increased, so that the particle breakage influences the measurement of the energy of the original primary charged particles. Optionally, the curvature radius of the spherical grid on the spherical grid assembly is correspondingly adapted to the distance between the measured ionic liquid electrospray thruster and the spherical grid. Preferably, the curvature radius of the spherical grid closest to the tested ionic liquid electrospray thruster of the spherical grid assembly is 300mm, and the high-precision measurement of the energy of the charged particles is realized while all the charged particles sprayed by the tested ionic liquid electrospray thruster are received. Preferably, the femtosecond laser is selected for ultrafast laser etching, the machining precision is high, thermal stress and mechanical stress do not exist, and the problem that the thin spherical surface is easy to deform in the machining process is avoided. Optionally, the insulating pad is made of a dielectric material such as ceramic or quartz. Optionally, the insulating gasket is pressed between two adjacent thin spherical profile parts. Optionally, after the plurality of thin spherical structural members are assembled, hollowed-out gaps are reserved along the radial direction, so that the crushed materials can be removed in the ultrafast laser processing process. Optionally, the thin spherical components are stacked and connected through positioning holes or positioning conical surfaces to ensure the position accuracy of each other.

In this embodiment, step S3 specifically includes the following steps: s321, processing a grid hole array on the grid hole processing spherical surface by using the central position of the grid hole processing spherical surface as a positioning reference by adopting an ultrafast laser etching process, and processing at least two positioning holes on the edge frame by using the central position of the grid hole processing spherical surface as a positioning reference to obtain a spherical grid; and S322, repeating the step S321, sequentially obtaining a plurality of spherical grids, and stacking and fixing the plurality of spherical grids through the positioning holes and the insulating gaskets arranged between the two adjacent edge frames to obtain the spherical grid assembly. Specifically, the spherical grid is obtained by firstly adopting ultrafast laser etching processing, and at least two positioning holes are processed in the processing process, so that the assembly among a plurality of spherical grids is facilitated, and the coaxiality of corresponding holes among a plurality of spherical grids is ensured. Optionally, the insulating spacer is pressed between two adjacent spherical gates.

In this embodiment, the step between the step S3 and the step S4 further includes the steps of: and cleaning the spherical grid electrode assembly by adopting an ultrasonic cleaning method, and then removing burrs in the laser processing process of the surface of the spherical grid electrode assembly by adopting electrochemical polishing. Specifically, the spherical grid component is of a layered structure, the grinding and cutting attached to the spherical grid component can be removed by adopting ultrasonic cleaning, and then burrs generated by gasification deposition in the laser processing process of the surface of the spherical grid component are removed by adopting electrochemical polishing. It should be understood that the specific implementation steps of the ultrasonic cleaning method are well known in the art and will not be described in detail herein.

As shown in fig. 4-6, in the present embodiment, the aperture shapes of the gate apertures in the gate aperture array are arranged in a square shape; and/or the cross-sectional dimension of the gate holes in the gate hole array is in the range of 0.3-0.5 mm. Specifically, the grid holes are arranged in a square shape, so that the area among the grid holes is small, and the ion transmittance of the spherical grid component is high; when the cross section size of the grid holes in the grid hole array is between 0.3 mm and 0.5mm and the line width range between two adjacent grid holes is between 0.04 mm and 0.06mm, the electric field in the grid holes is uniformly distributed. Preferably, the cross-sectional dimension of the gate hole is 0.4mm. Preferably, the line width between two adjacent gate holes is 0.05mm. It should be understood that the line width refers to the minimum wall thickness between two adjacent gate holes.

In this embodiment, the fitting holes are punched in the edge frame by press forming in step S1. Specifically, the assembly holes are punched through stamping forming, and the assembly of the follow-up spherical grid component is facilitated.

In this embodiment, in step S2, an electrochemical etching is used to etch the mounting hole in the edge frame. Specifically, the assembling holes are etched through electrochemical etching, so that the subsequent assembling of the spherical grid component is facilitated.

In this embodiment, step S1 further includes, before step S: and S0, designing and obtaining a corresponding stamping die and a metal plate according to the design curvature and the geometric dimension of the required grid. Specifically, the metal plate is relatively thick, which facilitates subsequent electrochemical etching. It should be understood that the spherical grid assembly adopts a triple-grid or quadruple-grid structure, and because the distance between each spherical grid and the tested ionic liquid electrospray thruster is different, and the corresponding curvature radius and geometric size are also different, each spherical grid needs to be designed and obtained with a corresponding stamping die and a corresponding metal plate.

As shown in fig. 7, the spherical retardation analyzer device of the present embodiment is manufactured by the above-mentioned method for manufacturing a spherical retardation analyzer. Specifically, the spherical grid component in the spherical retardation analyzer has high ion transmittance, uniform electric field and high measurement accuracy of charged particle energy.

The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. A manufacturing method of a spherical surface retardation potential analyzer is characterized by comprising the following steps:

s1, processing a metal plate by adopting punch forming and heat treatment setting to obtain a spherical configuration piece, wherein the spherical configuration piece comprises an edge frame and a central spherical surface;

s2, etching a grid hole processing spherical surface on the central spherical surface by adopting electrochemical etching to obtain a thin spherical structural member;

s3, etching a grid hole array on the grid hole processing spherical surface of the thin spherical structural part by adopting ultra-fast laser etching to obtain a spherical grid component;

and S4, obtaining the shell and the collector by adopting a machining method, and assembling the spherical grid component and the collector on the shell to obtain the spherical retardation analyzer.

2. The method for manufacturing a spherical retardation potential analyzer according to claim 1, wherein the step S2 specifically comprises the steps of:

s201, cleaning the spherical profile, spraying photoresist, drying for more than 30 minutes in an environment with the temperature less than 80 ℃, and then carrying out exposure treatment by adopting ultraviolet light so as to immerse the spherical profile into developing solution to expose the outline of a region to be processed;

s202, placing the exposed and developed spherical structural part into etching liquid for electrochemical etching, and controlling reaction time according to the reaction rate of the metal plate and the etching liquid to realize accurate control of the thickness of the grid hole processing spherical surface so as to obtain a grid hole processing spherical surface with the thickness meeting the requirement;

and S203, cleaning the thin spherical structural member after the grid hole machining spherical surface etching is finished, and removing the photoresist.

3. The method for manufacturing a spherical retardation potential analyzer according to claim 1, wherein the step S3 specifically comprises the steps of:

s311, a plurality of Bao Qiumian structural members are stacked and fixed through edge frames and insulating gaskets arranged between two adjacent edge frames;

s312, etching by using ultrafast laser, and sequentially finishing hole machining at corresponding positions of the same axis on each thin spherical profile by adjusting the focal depth of the laser or the position of the laser;

and S312, repeating the step S312 until the grid hole array is processed, so as to obtain the spherical grid electrode assembly.

4. The method for manufacturing a spherical retardation potential analyzer according to claim 1, wherein the step S3 specifically comprises the steps of:

s321, processing a grid hole array on the grid hole processing spherical surface by using the central position of the grid hole processing spherical surface as a positioning reference by adopting an ultrafast laser etching process, and processing at least two positioning holes on the edge frame by using the central position of the grid hole processing spherical surface as a positioning reference to obtain a spherical grid electrode;

and S322, repeating the step S321, sequentially obtaining a plurality of spherical grids, and stacking and fixing the plurality of spherical grids through the positioning holes and the insulating gaskets arranged between the two adjacent edge frames to obtain the spherical grid assembly.

5. The method for manufacturing a spherical retardation potential analyzer according to claim 1, further comprising the steps between step S3 and step S4 of:

and cleaning the spherical grid electrode assembly by adopting an ultrasonic cleaning method, and then removing burrs in the laser processing process of the surface of the spherical grid electrode assembly by adopting electrochemical polishing.

6. The method for manufacturing a spherical surface retardation potential analyzer as claimed in any one of claims 1 to 5, wherein the aperture shapes of the apertures in the array of apertures are arranged in a square shape; and/or

The cross section size range of the grid holes in the grid hole array is 0.3-0.5mm, and the line width range between two adjacent grid holes is 0.04-0.06mm.

7. The method for manufacturing a spherical surface retardation analyzer as claimed in any one of claims 1 to 5, wherein the assembling holes are punched in the edge frame by press forming in step S1.

8. The method for manufacturing a spherical retardation potential analyzer as claimed in any one of claims 1 to 5, wherein the assembling holes are etched in the edge frame by electrochemical etching in step S2.

9. The method for manufacturing a spherical surface retardation potential analyzer as claimed in any one of claims 1 to 5, further comprising, before the step S1, the steps of:

and S0, designing and obtaining a corresponding stamping die and a metal plate according to the design curvature and the geometric dimension of the required grid.

10. A spherical surface retardation potential analyzer device manufactured by the method for manufacturing a spherical surface retardation potential analyzer according to any one of claims 1 to 9.

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