CN108447753B - Field emission high-precision double-gate structure for reducing electron interception and installation method thereof - Google Patents
Field emission high-precision double-gate structure for reducing electron interception and installation method thereof Download PDFInfo
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- CN108447753B CN108447753B CN201810250613.9A CN201810250613A CN108447753B CN 108447753 B CN108447753 B CN 108447753B CN 201810250613 A CN201810250613 A CN 201810250613A CN 108447753 B CN108447753 B CN 108447753B
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- ceramic
- metal sheet
- grid
- bottom plate
- grid mesh
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/04—Cathodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/025—Mounting or supporting arrangements for grids
Abstract
The invention discloses a field emission high-precision double-gate structure for reducing electron capture and an installation method thereof, wherein the double-gate structure comprises a cathode substrate, a ceramic bottom plate, a cathode, a first grid mesh metal sheet, a second grid mesh metal sheet, an anode plate, a first ceramic column, a second ceramic column and a third ceramic column; the anode plate is arranged above the ceramic bottom plate and is connected with the ceramic bottom plate through two first ceramic columns, and the first grid metal sheet is arranged between the anode plate and the ceramic bottom plate and is connected with the ceramic bottom plate through two second ceramic columns; the second grid mesh metal sheet is arranged between the anode plate and the first grid mesh metal sheet and is connected with the ceramic bottom plate through two third ceramic posts; the first grid mesh metal sheet and the second grid mesh metal sheet are arranged in a cross manner, and positioning rods are respectively arranged between the positioning holes; the cathode substrate is arranged at the center of the bottom surface of the ceramic bottom plate, and the cathode penetrates through the ceramic bottom plate and is connected with the cathode substrate. The invention can solve the problem of difficult alignment between the pattern cathode and the grid mesh, greatly improve the alignment problem of the grid mesh and improve the grid mesh transmittance.
Description
Technical Field
the invention relates to a field emission high-precision double-gate structure for reducing electron interception and an installation method thereof, belonging to the technical field of field emission.
Background
Under conventional conditions, the tertiary structure of field emission consists of a cathode, a grid and an anode. The electrons of the cathode are pulled out by means of the high voltage of the grid, and a part of the emitted electrons are intercepted by the grid, and a part of the emitted electrons reach the anode. The current intercepted by the grid mesh can cause the temperature of the grid mesh to rise, on one hand, the grid mesh is heated to deflate, so that the vacuum condition is poor, ignition is easy, and a cathode is damaged, on the other hand, the grid mesh is heated to deform, so that the distance between the grid and the cathode is changed, and a short circuit is caused if the distance is serious; in places where the power is very intense, such as on a spacecraft, the cathode must be in a higher emission in order to obtain a suitable anode current, which increases the overall power load. Therefore, the reduction of the interception of the grid is a limiting factor of the application of the field emission device. The common solution is to use thinner wires as the grid mesh to improve the physical transmittance, and the other design is the cathode graphical design, so that each cathode is directly opposite to the small holes of the grid mesh, thereby greatly reducing the interception of the grid mesh. The former grid wires cannot be so fine affected by mechanical strength that the increase in physical transmittance is limited, while the grid mesh transmittance is much less than the physical transmittance. In the latter process, on one hand, the cathode patterning is not easy to realize with high precision, and on the other hand, the high-precision centering is difficult to realize on the centering of the cathode and the grid due to the limitation of the manufacturing process, so that the interception rate is high.
disclosure of Invention
The purpose of the invention is as follows: in order to overcome the defects of the prior art, the invention provides a field emission high-precision double-gate structure for reducing electron interception and an installation method thereof.
The technical scheme is as follows: in order to solve the technical problems, the invention adopts the following technical scheme:
a field emission high-precision double-gate structure for reducing electron capture comprises a cathode substrate, a ceramic bottom plate, a cathode, a first grid mesh metal sheet, a second grid mesh metal sheet, an anode plate, first ceramic columns, second ceramic columns and third ceramic columns; the anode plate is arranged above the ceramic bottom plate, the anode plate and the ceramic bottom plate are connected through two first ceramic columns, the second grid mesh metal sheet has the same structure as the first grid mesh metal sheet, the central part of the second grid mesh metal sheet is provided with a grid mesh, and four vertex angles of the grid mesh are externally provided with four mutually symmetrical and identical positioning holes; the first grid mesh metal sheet is arranged between the anode plate and the ceramic bottom plate and is connected with the ceramic bottom plate through two second ceramic columns; the second grid mesh metal sheet is arranged between the anode plate and the first grid mesh metal sheet, and the second grid mesh metal sheet is connected with the ceramic bottom plate through two third ceramic posts; the first grid mesh metal sheet and the second grid mesh metal sheet are arranged in a cross manner, and positioning rods are respectively arranged between the positioning holes of the first grid mesh metal sheet and the second grid mesh metal sheet; the cathode substrate is arranged at the center of the bottom surface of the ceramic bottom plate, the cathode penetrates through the ceramic bottom plate, the top surface of the cathode is attached to the bottom surface of the first grid metal sheet, and the bottom surface of the cathode is vertically connected with the top surface of the cathode substrate.
The working principle is as follows: according to the invention, four positioning holes and a grid mesh are processed at one time by adopting a laser processing method for a thin metal sheet to manufacture a first grid mesh metal sheet and a second grid mesh metal sheet, the first grid mesh metal sheet and the second grid mesh metal sheet are crossed and arranged on a ceramic base plate through two groups of ceramic columns, the two grid mesh metal sheets are insulated, and the distance between the two grid mesh metal sheets is realized by the height difference of the respective ceramic columns; forming the first grid mesh metal sheet and the second grid mesh metal sheet into the same grid mesh through the four positioning holes; the first grid mesh metal sheet and the second grid mesh metal sheet are completely centered through the positioning rod and the positioning hole; in the whole emission structure, the distances among the ceramic columns with different heights are controlled; and after cleaning, mounting a cathode and an anode, wherein the cathode is tightly contacted with the first grid metal sheet, so that the exposed cathode is ensured to be aligned with the grid of the first grid metal sheet, and the grid transmittance of the first grid metal sheet and the second grid metal sheet is improved.
The top end of the first ceramic column penetrates out of the anode plate and is fixed through a first nut, and the bottom end of the first ceramic column penetrates out of the ceramic bottom plate and is fixed through a second nut; the top end of the second ceramic column penetrates through the first grid metal sheet and is fixed through a third nut, and the bottom end of the second ceramic column penetrates through the ceramic bottom plate and is fixed through a fourth nut; the top end of the third ceramic column penetrates through the second grid metal sheet and is fixed through a fifth nut, and the bottom end of the third ceramic column penetrates through the ceramic bottom plate and is fixed through a sixth nut; can be conveniently installed and fixed with each ceramic column.
The anode plate is provided with a first through hole matched with the first ceramic column; a second through hole matched with the second ceramic column is formed in the first grid mesh metal sheet; a third through hole matched with the third ceramic column is formed in the second grid mesh metal sheet; the ceramic bottom plate is respectively provided with a first through hole, a second through hole and a third through hole which are matched with the first ceramic column, the second ceramic column and the third ceramic column; a fourth through hole matched with the cathode is also formed in the ceramic bottom plate; can be conveniently installed and fixed with each ceramic column and cathode.
The method for installing the field emission high-precision double-gate structure for reducing electron interception comprises the following steps:
1) mounting the first grid mesh metal sheet on a ceramic bottom plate through two second ceramic columns, wherein the top of each second ceramic column penetrates through the first grid mesh metal sheet and is fixedly screwed by a third nut, and the bottom of each second ceramic column penetrates through the ceramic bottom plate and is fixedly screwed by a fourth nut;
2) mounting the second grid metal sheet on the ceramic base plate through two third ceramic columns, and penetrating the tops of the third ceramic columns
The second grid mesh metal sheet is fixedly screwed by a fifth nut, and the bottom of the second grid mesh metal sheet penetrates through the ceramic bottom plate and is fixedly screwed by a sixth nut;
3) The anode plate is arranged on the bottom plate through two first ceramic columns, and the tops of the first ceramic columns penetrate out of the anode plate and are fixedly screwed by first nuts; the bottom of the ceramic bottom plate penetrates through the ceramic bottom plate and is fixedly screwed by a second nut;
4) And vertically connecting the cathode with a cathode substrate, wherein the cathode penetrates through the ceramic bottom plate, the top surface of the cathode is tightly attached to the first grid metal sheet, and the cathode substrate and the bottom plate are fixed by spot welding.
In the step 2), when the second grid metal sheet is installed, the second grid metal sheet is firstly placed above the first grid metal sheet, then four positioning rods respectively penetrate through four positioning holes of the first grid metal sheet and the second grid metal sheet in a one-to-one correspondence manner, the grid is aligned under a microscope, and the positioning rods are taken out after being fixed and screwed through fifth nuts and sixth nuts; the centering of the first grid metal sheet and the second grid metal sheet can be realized.
has the advantages that: the invention has simple structure, can solve the problem of difficult alignment between the patterned cathode and the grid mesh, can greatly improve the alignment problem of the grid mesh by adopting the positioning rod, and greatly improves the grid mesh transmittance.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a top view of FIG. 1;
FIG. 3 is a schematic view of a first grid metal sheet structure according to the present invention;
FIG. 4 is a schematic structural view of a second metal grid according to the present invention;
FIG. 5 is a schematic view of a positioning rod according to the present invention;
FIG. 6 is a schematic view of the positioning rod positioning dual-gate structure of the present invention.
Detailed Description
examples
As shown in fig. 1-5, a field emission high-precision double-gate structure for reducing electron capture includes a cathode substrate 1, a ceramic bottom plate 3, a cathode 4, a first grid mesh metal sheet 5, a second grid mesh metal sheet 6, an anode plate 2, a first ceramic column 7, a second ceramic column 8 and a third ceramic column 9; the anode plate 2 is arranged above the ceramic base plate 3, the anode plate 2 and the ceramic base plate 3 are connected through two first ceramic posts 7, the second grid mesh metal sheet 6 and the first grid mesh metal sheet 5 are identical in structure, a grid mesh 17 is arranged in the center of the second grid mesh metal sheet, and four symmetrical and identical positioning holes 16 are formed in the four outer portions of the grid mesh 17; the first grid mesh metal sheet 5 is arranged between the anode plate 2 and the ceramic bottom plate 3, and the first grid mesh metal sheet 5 is connected with the ceramic bottom plate 3 through two second ceramic posts 8; the second grid metal sheet 6 is arranged between the anode plate 2 and the first grid metal sheet 5, and the second grid metal sheet 6 is connected with the ceramic bottom plate 3 through two third ceramic posts 9; the first grid mesh metal sheet 5 and the second grid mesh metal sheet 6 are arranged in a cross manner, and positioning rods 20 are respectively arranged between the positioning holes 16 of the first grid mesh metal sheet 5 and the second grid mesh metal sheet 6; the cathode substrate 1 is arranged at the center of the bottom surface of the ceramic bottom plate 3, the cathode 4 penetrates through the ceramic bottom plate 3, the top surface of the cathode 4 is attached to the bottom surface of the first grid metal sheet 5, and the bottom surface of the cathode 4 is vertically connected with the top surface of the cathode substrate 1; the top end of the first ceramic column 7 penetrates out of the anode plate 2 and is fixed through a first nut 10, and the bottom end of the first ceramic column penetrates out of the ceramic bottom plate 3 and is fixed through a second nut 11; the top end of the second ceramic column 8 penetrates through the first grid metal sheet 5 and is fixed through a third nut 12, and the bottom end of the second ceramic column penetrates through the ceramic bottom plate 3 and is fixed through a fourth nut 13; the top end of the third ceramic column 9 penetrates through the second grid metal sheet 6 and is fixed through a fifth nut 14, and the bottom end of the third ceramic column penetrates through the ceramic bottom plate 3 and is fixed through a sixth nut 15; the anode plate 2 is provided with a first through hole matched with the first ceramic column 7; the first grid metal sheet 5 is provided with a second through hole 18 matched with the second ceramic column 8; the second grid mesh metal sheet 6 is provided with a third through hole 19 matched with the third ceramic column 9; the ceramic bottom plate 3 is respectively provided with a first through hole, a second through hole 18 and a third through hole 19 which are matched with the first ceramic column 7, the second ceramic column 8 and the third ceramic column 9; and a fourth through hole matched with the cathode 4 is also formed in the ceramic bottom plate 3.
The method for mounting the field emission high-precision double-gate structure for reducing electron interception comprises the following steps:
1) the first grid metal sheet 5 is installed on the ceramic bottom plate 3 through two second ceramic columns 8, the tops of the second ceramic columns 8 penetrate through the first grid metal sheet 5 and are fixedly screwed through third nuts 12, and the bottoms of the second ceramic columns 8 penetrate through the ceramic bottom plate 3 and are fixedly screwed through fourth nuts 13;
2) mounting the second grid metal sheet 6 on the ceramic bottom plate 3 through two third ceramic columns 9, wherein the tops of the third ceramic columns 9 penetrate through the second grid metal sheet 6 and are fixedly screwed by fifth nuts 14, and the bottoms of the third ceramic columns 9 penetrate through the ceramic bottom plate 3 and are fixedly screwed by sixth nuts 15; when the second grid metal sheet 6 is installed, the second grid metal sheet 6 is firstly placed above the first grid metal sheet 5, then four positioning rods 20 respectively penetrate through the four positioning holes 16 of the first grid metal sheet 5 and the second grid metal sheet 6 in a one-to-one correspondence mode, the grid 17 is aligned under a microscope, and the positioning rods 20 are taken out after the fifth nut 14 and the sixth nut 15 are fixedly screwed.
3) The anode plate 2 is arranged on the bottom plate through two first ceramic columns 7, the top of each first ceramic column 7 penetrates out of the anode plate 2 and is fixedly screwed by a first nut 10; the bottom of the ceramic bottom plate 3 penetrates through the ceramic bottom plate and is fixedly screwed by a second nut 11;
4) the cathode 4 is vertically connected with the base of the cathode 4, the cathode 4 penetrates through the ceramic bottom plate 3, the top surface of the cathode 4 is tightly attached to the first grid metal sheet 5, and the base of the cathode 4 and the bottom plate are fixed through spot welding.
According to the invention, four positioning holes 16 and a grid 17 are processed at one time by adopting a laser processing method for a thin metal sheet to manufacture a first grid metal sheet 5 and a second grid metal sheet 6, the first grid metal sheet 5 and the second grid metal sheet 6 are crossed and are arranged on a ceramic base plate 3 through two groups of ceramic columns, the two grid metal sheets 17 are insulated, and the distance between the two grid metal sheets is realized by the height difference of the respective ceramic columns; forming the first grid metal sheet 5 and the second grid metal sheet 6 into an identical grid 17 through four positioning holes 16; the first grid mesh metal sheet 5 and the second grid mesh metal sheet 6 are completely centered through the positioning rod 20 and the positioning hole 16; in the whole emission structure, the distances among the ceramic columns with different heights are controlled; after cleaning, the cathode 4 and the anode are installed, wherein the cathode 4 is in close contact with the first grid metal sheet 5, so that the exposed cathode 4 is ensured to be aligned with the grid 17 of the first grid metal sheet 5, and the transmissivity of the grid 17 of the first grid metal sheet 5 and the second grid metal sheet 6 is improved. The invention has simple structure, can solve the problem of difficult alignment between the pattern cathode 4 and the grid mesh 17 hole, can greatly improve the alignment problem of the grid mesh 17 by adopting the positioning rod 20, and greatly improves the grid mesh transmittance.
The prior art is not mentioned in the invention.
Claims (5)
1. A field emission high accuracy bigrid structure for reducing electron capture, including negative pole base, negative pole, anode plate, its characterized in that: the ceramic grid mesh structure further comprises a ceramic bottom plate, a first grid mesh metal sheet, a second grid mesh metal sheet, a first ceramic column, a second ceramic column and a third ceramic column; the anode plate is arranged above the ceramic bottom plate, the anode plate and the ceramic bottom plate are connected through two first ceramic columns, the second grid mesh metal sheet has the same structure as the first grid mesh metal sheet, the central part of the second grid mesh metal sheet is provided with a grid mesh, and four vertex angles of the grid mesh are externally provided with four mutually symmetrical and identical positioning holes; the first grid mesh metal sheet is arranged between the anode plate and the ceramic bottom plate and is connected with the ceramic bottom plate through two second ceramic columns; the second grid mesh metal sheet is arranged between the anode plate and the first grid mesh metal sheet, and the second grid mesh metal sheet is connected with the ceramic bottom plate through two third ceramic posts; the first grid mesh metal sheet and the second grid mesh metal sheet are arranged in a cross manner, and positioning rods are respectively arranged between the positioning holes of the first grid mesh metal sheet and the second grid mesh metal sheet; the cathode substrate is arranged at the center of the bottom surface of the ceramic bottom plate, the cathode penetrates through the ceramic bottom plate, the top surface of the cathode is attached to the bottom surface of the first grid metal sheet, and the bottom surface of the cathode is vertically connected with the top surface of the cathode substrate.
2. The field emission high precision double gate structure for reducing electron interception according to claim 1, characterized by: the top end of the first ceramic column penetrates out of the anode plate and is fixed through a first nut, and the bottom end of the first ceramic column penetrates out of the ceramic bottom plate and is fixed through a second nut; the top end of the second ceramic column penetrates through the first grid metal sheet and is fixed through a third nut, and the bottom end of the second ceramic column penetrates through the ceramic bottom plate and is fixed through a fourth nut; the top end of the third ceramic column penetrates through the second grid metal sheet and is fixed through a fifth nut, and the bottom end of the third ceramic column penetrates through the ceramic bottom plate and is fixed through a sixth nut.
3. The field emission high precision double gate structure for reducing electron interception according to claim 1 or 2, characterized by: the anode plate is provided with a first through hole matched with the first ceramic column; a second through hole matched with the second ceramic column is formed in the first grid mesh metal sheet; a third through hole matched with the third ceramic column is formed in the second grid mesh metal sheet; the ceramic bottom plate is respectively provided with a first through hole, a second through hole and a third through hole which are matched with the first ceramic column, the second ceramic column and the third ceramic column; and a fourth through hole matched with the cathode is also arranged on the ceramic bottom plate.
4. A method of mounting a field emission high precision double gate structure for reduced electron trapping according to any of claims 1-3, characterized by: the method comprises the following steps:
1) mounting the first grid mesh metal sheet on a ceramic bottom plate through two second ceramic columns, wherein the top of each second ceramic column penetrates through the first grid mesh metal sheet and is fixedly screwed by a third nut, and the bottom of each second ceramic column penetrates through the ceramic bottom plate and is fixedly screwed by a fourth nut;
2) mounting the second grid metal sheet on the ceramic bottom plate through two third ceramic columns, wherein the top of each third ceramic column penetrates through the second grid metal sheet and is fixedly screwed by a fifth nut, and the bottom of each third ceramic column penetrates through the ceramic bottom plate and is fixedly screwed by a sixth nut;
3) The anode plate is arranged on the bottom plate through two first ceramic columns, and the tops of the first ceramic columns penetrate out of the anode plate and are fixedly screwed by first nuts; the bottom of the ceramic bottom plate penetrates through the ceramic bottom plate and is fixedly screwed by a second nut;
4) And vertically connecting the cathode with a cathode substrate, wherein the cathode penetrates through the ceramic bottom plate, the top surface of the cathode is tightly attached to the first grid metal sheet, and the cathode substrate and the bottom plate are fixed by spot welding.
5. The method of mounting a field emission high precision double gate structure for reducing electron trapping according to claim 4, wherein: in the step 2), when the second grid metal sheet is installed, the second grid metal sheet is firstly placed above the first grid metal sheet, then four positioning rods respectively penetrate through the four positioning holes of the first grid metal sheet and the second grid metal sheet in a one-to-one correspondence mode, the grid is aligned under a microscope, and the positioning rods are taken out after the fixing and screwing of the fifth nut and the sixth nut.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810250613.9A CN108447753B (en) | 2018-03-26 | 2018-03-26 | Field emission high-precision double-gate structure for reducing electron interception and installation method thereof |
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| CN201810250613.9A CN108447753B (en) | 2018-03-26 | 2018-03-26 | Field emission high-precision double-gate structure for reducing electron interception and installation method thereof |
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| CN108447753A CN108447753A (en) | 2018-08-24 |
| CN108447753B true CN108447753B (en) | 2019-12-10 |
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Citations (2)
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| EP0784860A1 (en) * | 1994-09-15 | 1997-07-23 | Pixtech Inc. | Electronic fluorescent display system with simplified multiple electrode structure and its processing |
| CN1661758A (en) * | 2004-02-25 | 2005-08-31 | 三星Sdi株式会社 | Electron emission device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1153397A (en) * | 1995-12-29 | 1997-07-02 | 广播电影电视部广播科学研究院 | Plate vacuum video camera device |
| JP3724419B2 (en) * | 2001-12-17 | 2005-12-07 | 双葉電子工業株式会社 | Vacuum display element |
| JP2005056604A (en) * | 2003-08-06 | 2005-03-03 | Hitachi Displays Ltd | Self-luminous flat display device |
| CN204257583U (en) * | 2014-11-13 | 2015-04-08 | 李飞 | The triode flat-panel monitor of plane field emitting cathode |
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2018
- 2018-03-26 CN CN201810250613.9A patent/CN108447753B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0784860A1 (en) * | 1994-09-15 | 1997-07-23 | Pixtech Inc. | Electronic fluorescent display system with simplified multiple electrode structure and its processing |
| CN1661758A (en) * | 2004-02-25 | 2005-08-31 | 三星Sdi株式会社 | Electron emission device |
Non-Patent Citations (1)
| Title |
|---|
| 《碳纳米管场发射显示器中栅极技术的研究》;狄云松 等;《电子器件》;20061231;第29卷(第4期);第1007-1014页 * |
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