CN115188723A - System-in-package structure and manufacturing method thereof - Google Patents
System-in-package structure and manufacturing method thereof Download PDFInfo
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- CN115188723A CN115188723A CN202211112917.1A CN202211112917A CN115188723A CN 115188723 A CN115188723 A CN 115188723A CN 202211112917 A CN202211112917 A CN 202211112917A CN 115188723 A CN115188723 A CN 115188723A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 97
- 229910052751 metal Inorganic materials 0.000 claims abstract description 69
- 239000002184 metal Substances 0.000 claims abstract description 69
- 230000017525 heat dissipation Effects 0.000 claims abstract description 46
- 238000004806 packaging method and process Methods 0.000 claims abstract description 24
- 239000010410 layer Substances 0.000 claims description 265
- 238000005538 encapsulation Methods 0.000 claims description 16
- 239000012790 adhesive layer Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000003921 oil Substances 0.000 description 4
- 239000000741 silica gel Substances 0.000 description 4
- 229910002027 silica gel Inorganic materials 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
Abstract
The invention discloses a system-in-package structure and a manufacturing method thereof, wherein the system-in-package structure comprises a substrate, a device layer, a heat conduction layer, a packaging layer and a first metal shielding layer; the device layer is positioned on one side of the substrate; the heat conduction layer is positioned on one side of the partial device layer away from the substrate; the packaging layer is positioned on one side of the device layer far away from the substrate, the packaging layer covers the device layer, and the surface of the packaging layer far away from the substrate is flush with the surface of the heat conduction layer far away from the substrate; the first metal shielding layer is positioned on one side, far away from the substrate, of the packaging layer and the heat conduction layer. The invention provides a system-in-package structure and a manufacturing method thereof, which can improve the heat dissipation capability of the system-in-package structure under the condition of not increasing the volume of the system-in-package structure.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a system-level packaging structure and a manufacturing method thereof.
Background
A System In Package (SIP) is a single standard Package that is used for packaging different chips side by side or in a stacked manner, and a plurality of chips with different functions, passive devices, and the like are assembled together to realize a certain function.
However, the conventional system-in-package structure has a high integration level and a small package volume, and thus the problem of performance and function failure of the product is easily caused when heat dissipation is not timely performed.
Disclosure of Invention
The invention provides a system-in-package structure and a manufacturing method thereof, which can improve the heat dissipation capability of the system-in-package structure under the condition of not increasing the volume of the system-in-package structure.
According to an aspect of the present invention, there is provided a system in package structure, the system in package structure comprising:
a substrate;
a device layer on one side of the substrate;
the heat conduction layer is positioned on one side of part of the device layer away from the substrate;
the packaging layer is positioned on one side, away from the substrate, of the device layer, covers the device layer, and is flush with the surface, away from the substrate, of the heat conduction layer;
the first metal shielding layer is positioned on one side, away from the substrate, of the packaging layer and the heat conduction layer.
Optionally, the material of the heat conducting layer includes heat conducting silica gel.
Optionally, the system in package structure provided in this embodiment further includes a second metal shielding layer;
the second metal shielding layer surrounds the side of the encapsulation layer and the side of the substrate.
Optionally, the thickness of the first metal shielding layer is 3 μm to 9 μm;
the thickness of the second metal shielding layer is 1-5 mu m.
Optionally, the system in package structure provided in this embodiment further includes a heat dissipation layer;
the heat dissipation layer is located on one side, far away from the substrate, of the first metal shielding layer.
Optionally, a perpendicular projection of the heat dissipation layer on the substrate overlaps a perpendicular projection of the heat conduction layer on the substrate.
Optionally, a vertical projection of the heat dissipation layer on the substrate covers a vertical projection of the heat conduction layer on the substrate.
Optionally, the material of the heat dissipation layer includes at least one of gold, silver, aluminum, iron, and magnesium.
Optionally, the system in package structure provided in this embodiment further includes a thermal conductive adhesive layer;
the heat-conducting adhesive layer is located between the device layer and the heat-conducting layer, and the heat-conducting adhesive layer is used for fixing the heat-conducting layer on one side, far away from the substrate, of the part of the device layer.
According to another aspect of the present invention, there is provided a method for manufacturing a system-in-package structure, the method comprising the steps of:
providing a substrate;
forming a device layer on one side of the substrate;
forming a heat conduction layer on one side of part of the device layer far away from the substrate;
forming an encapsulation layer on one side of the device layer far away from the substrate, so that the encapsulation layer covers the device layer, and the surface of the encapsulation layer far away from the substrate is flush with the surface of the heat conduction layer far away from the substrate;
and forming a first metal shielding layer on one side of the packaging layer and the heat conduction layer, which is far away from the substrate.
The system in package structure that this embodiment provided is provided with the heat-conducting layer in one side that the base plate was kept away from on some device layers, and the heat-conducting layer can be with producing the produced heat of the great chip of heat in the device layer and conduct to first metal shielding layer fast, and first metal shielding layer can give off the heat of heat-conducting layer conduction to the external world fast to reduce the temperature on device layer. In addition, the first metal shielding layer has the characteristic of anti-electromagnetic interference, so that the anti-electromagnetic interference characteristic of the system-in-package structure can be improved. In this embodiment, the surface of the package layer away from the substrate is flush with the surface of the heat conductive layer away from the substrate, so that the volume of the system-in-package structure is not increased by the arrangement of the heat conductive layer. Therefore, the system-in-package structure provided by the embodiment can improve the heat dissipation capability of the system-in-package structure without increasing the volume of the system-in-package structure.
It should be understood that the statements in this section are not intended to identify key or critical features of the embodiments of the present invention, nor are they intended to limit the scope of the invention. Other features of the present invention will become apparent from the following description.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the description below are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a system-in-package structure according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of another system-in-package structure according to an embodiment of the invention.
Fig. 3 is a schematic structural diagram of another system-in-package structure according to an embodiment of the invention.
Fig. 4 is a schematic structural diagram of another system-in-package structure according to an embodiment of the present invention.
Fig. 5 is a schematic structural diagram of a further system-in-package structure according to an embodiment of the present invention.
Fig. 6 is a schematic structural diagram of another system-in-package structure according to an embodiment of the present invention.
Fig. 7 is a schematic structural diagram of a further system-in-package structure according to an embodiment of the present invention.
Fig. 8 is a flowchart illustrating a method for manufacturing a system-in-package structure according to an embodiment of the present invention.
Fig. 9-16 are schematic flow diagrams illustrating the formation of a system-in-package structure.
The reference numerals in the figures are as follows:
110-substrate, 120-device layer, 130-heat conduction layer, 140-packaging layer, 150-first metal shielding layer, 111-circuit layer, 112-pin, 113-green oil layer, 160-second metal shielding layer, 170-heat dissipation layer, 180-heat conduction glue layer and 190-circular ring.
Detailed Description
In order to make those skilled in the art better understand the technical solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in other sequences than those illustrated or described herein. Moreover, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Fig. 1 is a schematic structural diagram of a system-in-package structure according to an embodiment of the present invention, and referring to fig. 1, the system-in-package structure provided in this embodiment includes a substrate 110, a device layer 120, a thermally conductive layer 130, an encapsulation layer 140, and a first metal shielding layer 150; the device layer 120 is located on one side of the substrate 110; the thermally conductive layer 130 is located on a side of the partial device layer 120 away from the substrate 110; the packaging layer 140 is positioned on one side of the device layer 120 away from the substrate 110, the packaging layer 140 covers the device layer 120, and the surface of the packaging layer 140 away from the substrate 110 is flush with the surface of the heat conduction layer 130 away from the substrate 110; the first metal shielding layer 150 is located on a side of the encapsulation layer 140 and the heat conductive layer 130 away from the substrate 110.
Specifically, the substrate 110 includes a circuit layer 111, a plurality of pins 112 and a green oil layer 113, the green oil layer 113 is disposed between the pins 112 and the pins 112 of the substrate 110, and the green oil layer 113 is a liquid photo solder resist, so as to protect the circuit pattern on the circuit layer 111 for a long time. The first metal shielding layer 150 is located on the surface of the encapsulation layer 140 away from the substrate 110 and also located on the surface of the heat conductive layer 130 away from the substrate 110.
The device layer 120 is adjacent to the circuit layer 111 in the substrate 110, and device pins in the device layer 120 are connected to the circuit layer 111. The device layer 120 includes a plurality of passive devices, which may be resistors, capacitors, etc., and at least one chip, which may be a driver amplifier. The thermally conductive layer 130 has good thermal conductivity. Since the chip in the device layer 120 generates a large amount of heat during operation, the heat conducting layer 130 may be disposed on a side of the chip with a large amount of heat generated in the device layer 120 away from the substrate 110, so that the heat conducting layer 130 rapidly conducts the heat generated by the chip with a large amount of heat generated in the device layer 120 to the first metal shielding layer 150. The first metal shielding layer 150 includes a metal material, and the metal has a good heat dissipation property, so that the first metal shielding layer 150 can rapidly dissipate the heat conducted by the heat conducting layer 130, thereby reducing the temperature of the device layer 120 and preventing the device layer 120 from being damaged due to untimely heat dissipation. In addition, the first metal shielding layer 150 in this embodiment has a shielding function, and can prevent electromagnetic interference, thereby improving the working performance of the system-in-package structure. Since the material of the first metal shielding layer 150 is metal, other devices may be disposed on the surface of the first metal shielding layer 150 away from the substrate 110.
The material of the encapsulation layer 140 includes resin, the encapsulation layer 140 is used to protect the device layer 120 from moisture, and the encapsulation layer 140 can prevent the devices in the device layer 120 from being damaged or contaminated. The surface of the heat conduction layer 130 away from the substrate 110 is flush with the surface of the package layer 140 away from the substrate 110, so that the heat dissipation capability of the system-in-package structure can be improved without increasing the volume of the system-in-package structure.
The system-in-package structure that this embodiment provided is provided with the heat-conducting layer in one side that the base plate was kept away from on some device layers, and the heat-conducting layer can be with producing the produced heat of the great chip of heat quantity and conduct to first metal shielding layer fast in the device layer, and first metal shielding layer can give off the heat of heat-conducting layer conduction to the external world fast to reduce the temperature on device layer. In addition, the first metal shielding layer has the characteristic of anti-electromagnetic interference, so that the anti-electromagnetic interference characteristic of the system-in-package structure can be improved. The surface of the package layer away from the substrate in this embodiment is flush with the surface of the heat conduction layer away from the substrate, so that the volume of the system-in-package structure is not increased by the arrangement of the heat conduction layer. Therefore, the system-in-package structure provided by the embodiment can improve the heat dissipation capability without increasing the volume of the system-in-package structure.
Optionally, the material of the heat conducting layer includes heat conducting silica gel.
Specifically, the heat conducting silica gel has good heat conducting performance, and can quickly conduct heat in the device layer to the first metal shielding layer. In addition, the cost of the heat-conducting silica gel is low and easy to obtain, and the manufacturing cost of the system-in-package structure can be reduced.
On the basis of the foregoing embodiment, optionally, fig. 2 is a schematic structural diagram of another system-in-package structure provided in the embodiment of the present invention, and referring to fig. 2, the system-in-package structure provided in this embodiment further includes a second metal shielding layer 160; the second metal shield layer 160 surrounds the side of the encapsulation layer 140 and the side of the substrate 110.
Specifically, the second metal shielding layer 160 has an anti-electromagnetic interference characteristic, and the anti-electromagnetic interference characteristic of the system-in-package structure can be further improved by the arrangement of the second metal shielding layer 160. The arrangement of the first metal shielding layer 150 and the second metal shielding layer 160 may achieve conformal shielding of the system-in-package structure.
Optionally, the thickness of the first metal shielding layer is 3 μm to 9 μm; the thickness of the second metal shielding layer is 1-5 μm.
Specifically, the material of the first metal shielding layer may be the same as that of the second metal shielding layer, and the first metal shielding layer and the second metal shielding layer may be fabricated simultaneously. The first metal shielding layer and the second metal shielding layer can be formed simultaneously by adopting a magnetron sputtering mode. The thickness of the first metal shielding layer can be different from that of the second metal shielding layer, and the thickness of the first metal shielding layer and the thickness of the second metal shielding layer can be set according to the requirement of anti-electromagnetic interference. In addition, the thickness of the first metal shielding layer is set to be within the range of 3-9 microns, and the thickness of the second metal shielding layer is set to be within the range of 1-5 microns, so that the anti-electromagnetic interference performance can be achieved, and the volume of the system-level packaging structure cannot be excessively increased.
On the basis of any of the foregoing embodiments, optionally, fig. 3 is a schematic structural diagram of another system-in-package structure provided according to an embodiment of the present invention, and referring to fig. 3, the system-in-package structure provided in this embodiment further includes a heat dissipation layer 170; the heat dissipation layer 170 is located on a side of the first metal shielding layer 150 away from the substrate 110.
Specifically, the material of the heat dissipation layer 170 may be metal. The heat dissipation layer 170 is adjacent to the first metal shielding layer 150, and when the heat conduction layer 130 conducts heat to the first metal shielding layer 150, the first metal shielding layer 150 can conduct the heat to the heat dissipation layer 170, and the heat dissipation layer 170 can dissipate the heat to the outside. The heat dissipation layer 170 increases the heat dissipation area, and can further improve the heat dissipation efficiency.
It should be noted that the heat dissipation layer 170 in this embodiment may be disposed at any position of the surface of the first metal shielding layer 150 away from the substrate 110.
Alternatively, fig. 4 is a schematic structural diagram of another system-in-package structure provided according to an embodiment of the present invention, fig. 5 is a schematic structural diagram of another system-in-package structure provided according to an embodiment of the present invention, and referring to fig. 4 and fig. 5, a vertical projection of the heat dissipation layer 170 on the substrate 110 overlaps a vertical projection of the heat conductive layer 130 on the substrate 110.
Specifically, the vertical projection of the heat dissipation layer 170 on the substrate 110 and the vertical projection of the heat conduction layer 130 on the substrate 110 may overlap, specifically, the vertical projection of the heat conduction layer 130 on the substrate 110 covers the vertical projection of the heat dissipation layer 170 on the substrate 110 (refer to fig. 4), and may also overlap a part of the vertical projection of the heat dissipation layer 170 on the substrate 110 and the vertical projection of the heat conduction layer 130 on the substrate 110 (refer to fig. 5). The vertical projection of the heat dissipation layer 170 on the substrate 110 overlaps with the vertical projection of the heat conduction layer 130 on the substrate 110, so that the heat in the heat conduction layer 130 can be directly transferred to the heat dissipation layer 170, and the heat dissipation efficiency is improved.
Alternatively, fig. 6 is a schematic structural diagram of another system-in-package structure provided according to an embodiment of the present invention, and referring to fig. 6, a vertical projection of the heat dissipation layer 170 on the substrate 110 covers a vertical projection of the heat conduction layer 130 on the substrate 110.
Specifically, the vertical projection of the heat dissipation layer 170 on the substrate 110 is set to cover the vertical projection of the heat conduction layer 130 on the substrate 110, so that on one hand, the heat dissipation area of the heat dissipation layer 170 can be increased, and on the other hand, the heat in the heat conduction layer 130 can be directly transmitted to the heat dissipation layer 170, thereby improving the heat dissipation efficiency.
Optionally, the material of the heat dissipation layer includes at least one of gold, silver, aluminum, iron, and magnesium.
Specifically, the heat dissipation layer formed of at least one of gold, silver, aluminum, iron, magnesium, and the like can provide the heat dissipation layer with good heat dissipation performance, thereby increasing the heat dissipation rate.
Optionally, fig. 7 is a schematic structural diagram of another system in package structure provided in an embodiment of the present invention, and referring to fig. 7, the system in package structure provided in this embodiment further includes a thermal conductive adhesive layer 180; the thermal adhesive layer 180 is located between the device layer 120 and the thermal conductive layer 130, and the thermal adhesive layer 180 is used to fix the thermal conductive layer 130 on a side of the device layer away from the substrate 110.
Specifically, the thermal conductive adhesive layer 180 has viscosity and thermal conductivity, and the thermal conductive adhesive layer 180 may be a double-sided adhesive tape. The thermal conductive adhesive layer 180 may adhere the thermal conductive layer 130 to the surface of the chip of the device layer 120, which generates a larger amount of heat. The thermal conductive adhesive layer 180 can make the thermal conductive layer 130 more firmly located on the surface of the chip with larger heat generation in the device layer 120. Fig. 8 is a schematic flowchart of a method for manufacturing a system in package structure according to an embodiment of the present invention, and referring to fig. 8, the method for manufacturing a system in package structure according to the embodiment includes the following steps:
s110, providing a substrate.
Specifically, referring to fig. 9, fig. 9 is a schematic structural diagram of the substrate 110.
And S120, forming a device layer on one side of the substrate.
Specifically, referring to fig. 10, fig. 10 is a schematic structural diagram after the device layer 120 is formed, a plurality of different passive devices and a plurality of chips are bonded to one side of the substrate 110, so as to form the device layer 120, the device layer 120 may be formed by a reflow method, and cleaning is required after the device layer 120 is formed.
And S130, forming a heat conduction layer on one side of the partial device layer far away from the substrate.
Specifically, referring to fig. 11, fig. 11 is a schematic structural diagram after forming the heat conductive layer 130, and before forming the heat conductive layer 130, a heat conductive adhesive and a heat conductive silicon wafer may be sequentially placed on a portion of the device layer. Then, curing and baking are performed, so that the heat conductive adhesive layer 180 and the heat conductive layer 130 are formed.
And S140, forming a packaging layer on one side of the device layer far away from the substrate, wherein the packaging layer covers the device layer, and the surface of the packaging layer far away from the substrate is flush with the surface of the heat conduction layer far away from the substrate.
Specifically, referring to fig. 12, fig. 12 is a schematic structural diagram of forming the encapsulation layer 140.
Before S150 is executed, the structure formed in S140 is cut to form a single system-in-package structure, and a schematic diagram of the structure after cutting is shown in fig. 13.
Referring to fig. 14, the cut structure is then secured to a circular ring 190 with polyimide film tape applied.
And S150, forming a first metal shielding layer on one side, far away from the substrate, of the packaging layer and the heat conduction layer.
Specifically, referring to fig. 15, the structure shown in fig. 14 is placed in a magnetron sputtering machine to perform magnetron sputtering, and the first metal shielding layer 150 and the second metal shielding layer 160 are formed at the same time, and the material of the first metal shielding layer 150 is the same as the material of the second metal shielding layer 160.
Referring to fig. 16, after S150, the circular ring with the polyimide film tape attached thereon is removed, and a heat dissipation layer 170 is attached to a side of the first metal shielding layer 150 away from the substrate 110 with the first metal shielding layer 150 as a seed layer, so as to form the structure shown in fig. 16.
The method for manufacturing the system in package structure provided by the embodiment of the present invention and the system in package structure provided by any embodiment of the present invention have corresponding advantages, and detailed technical details are not described in the embodiment, and the system in package structure provided by any embodiment of the present invention is described in detail.
It should be understood that various forms of the flows shown above may be used, with steps reordered, added, or deleted. For example, the steps described in the present invention may be executed in parallel, sequentially, or in different orders, and are not limited herein as long as the desired result of the technical solution of the present invention can be achieved.
The above-described embodiments should not be construed as limiting the scope of the invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions may be made in accordance with design requirements and other factors. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A system in a package structure, comprising:
a substrate;
a device layer on one side of the substrate;
the heat conduction layer is positioned on one side of part of the device layer away from the substrate;
the packaging layer is positioned on one side, away from the substrate, of the device layer, the packaging layer covers the device layer, and the surface, away from the substrate, of the packaging layer is flush with the surface, away from the substrate, of the heat conduction layer;
the first metal shielding layer is positioned on one side, far away from the substrate, of the packaging layer and the heat conduction layer.
2. The system-in-package structure according to claim 1, wherein the material of the heat conducting layer comprises a thermally conductive silicone.
3. The system-in-package structure according to claim 1, further comprising a second metal shielding layer;
the second metal shielding layer surrounds a side of the encapsulation layer and a side of the substrate.
4. The system-in-package structure according to claim 3, wherein the first metal shielding layer has a thickness of 3 μm to 9 μm;
the thickness of the second metal shielding layer is 1-5 mu m.
5. The system-in-package structure according to any one of claims 1-4, further comprising a heat sink layer;
the heat dissipation layer is located on one side, far away from the substrate, of the first metal shielding layer.
6. The system-in-package structure according to claim 5, wherein a vertical projection of the heat dissipation layer on the substrate overlaps a vertical projection of the heat conductive layer on the substrate.
7. The system-in-package structure according to claim 5, wherein a perpendicular projection of the heat dissipation layer on the substrate covers a perpendicular projection of the heat conductive layer on the substrate.
8. The system-in-package structure according to claim 5, wherein the material of the heat dissipation layer comprises at least one of gold, silver, aluminum, iron, and magnesium.
9. The system-in-package structure of claim 1, further comprising a thermal adhesive layer;
the heat conduction glue layer is located between the device layer and the heat conduction layer, and the heat conduction glue layer is used for fixing the heat conduction layer on one side of the part of the device layer far away from the substrate.
10. A method for manufacturing a system-in-package structure is characterized by comprising the following steps:
providing a substrate;
forming a device layer on one side of the substrate;
forming a heat conduction layer on one side of part of the device layer far away from the substrate;
forming an encapsulation layer on one side of the device layer far away from the substrate, so that the encapsulation layer covers the device layer, and the surface of the encapsulation layer far away from the substrate is flush with the surface of the heat conduction layer far away from the substrate;
and forming a first metal shielding layer on one sides of the packaging layer and the heat conduction layer, which are far away from the substrate.
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| CN107078125A (en) * | 2015-01-21 | 2017-08-18 | 株式会社村田制作所 | Power amplifier module |
| CN109065504A (en) * | 2018-06-29 | 2018-12-21 | 北京比特大陆科技有限公司 | A kind of chip dustproof construction and calculate equipment, mine machine |
| CN110473858A (en) * | 2018-05-11 | 2019-11-19 | 日月光半导体制造股份有限公司 | Semiconductor packages and its manufacturing method |
| CN112447631A (en) * | 2020-11-09 | 2021-03-05 | 南昌航空大学 | Heat radiation structure of packaged chip |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107078125A (en) * | 2015-01-21 | 2017-08-18 | 株式会社村田制作所 | Power amplifier module |
| CN110473858A (en) * | 2018-05-11 | 2019-11-19 | 日月光半导体制造股份有限公司 | Semiconductor packages and its manufacturing method |
| CN109065504A (en) * | 2018-06-29 | 2018-12-21 | 北京比特大陆科技有限公司 | A kind of chip dustproof construction and calculate equipment, mine machine |
| CN112447631A (en) * | 2020-11-09 | 2021-03-05 | 南昌航空大学 | Heat radiation structure of packaged chip |
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