CN115188406A - Memory detection method, computer-readable storage medium and terminal device - Google Patents
Memory detection method, computer-readable storage medium and terminal device Download PDFInfo
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Abstract
The application discloses a detection method of a memory, a computer readable storage medium and a terminal device, wherein the method comprises the following steps: circularly writing a target file into a memory to be detected, and recording the writing times of the target file; when the change value of the service life of the memory to be detected reaches a first preset change value, determining the total write-in amount of the memory to be detected according to the size of the target file and the write-in times; and determining the detection result of the memory to be detected according to the total writing amount. According to the method and the device, the target file which is larger than the preset threshold value is circularly written into the memory to be detected, and when the change value of the service life of the memory to be detected reaches the first preset change value, whether the memory is qualified or not is detected based on the total writing amount and the expected total writing amount, so that the detection speed of the memory can be improved by adopting a mode of writing the target file which is larger than the preset threshold value, and the detection efficiency of the memory is improved.
Description
Technical Field
The present application relates to the field of data storage technologies, and in particular, to a method for detecting a memory, a computer-readable storage medium, and a terminal device.
Background
With the development of science and technology, people have higher and higher use demands on various terminals, and the increase of the use demands on the terminals brings about the requirement on memories in the terminals. Among them, 3D TLC storage particles are widely used in terminals due to advantages of large storage capacity and small volume, for example, UFS memory used in smart phones and eMMC memory used in televisions are used for 3D TLC storage particles. However, the problem of low detection efficiency is generally existed in the current detection of the erasing and writing life of the 3D TLC storage particles.
Disclosure of Invention
In order to overcome the defects in the prior art, the application provides a memory detection method, a computer-readable storage medium and a terminal device.
In order to solve the above technical problem, a first aspect of the embodiments of the present application provides a method for detecting a memory, including:
circularly writing a target file into a memory to be detected, and recording the writing times of the target file, wherein the size of the target file is larger than a preset threshold value;
when the change value of the service life of the memory to be detected reaches a first preset change value, determining the total write-in amount of the memory to be detected according to the size of the target file and the write-in times;
and determining the detection result of the memory to be detected according to the total writing amount.
A second aspect of the embodiments of the present application provides a computer-readable storage medium, in which a detection program of a memory is stored, and the detection program of the memory implements the steps in the method according to any one of the above when executed by a processor.
A third aspect of the embodiments of the present application provides a terminal device, where the terminal device includes a processor, a memory, and a detection program stored in the memory and executable on the processor, and the processor implements the steps in the method when executing the detection program in the memory.
Has the advantages that: compared with the prior art, the application provides a detection method of a memory, a computer readable storage medium and a terminal device, and the method comprises the following steps: circularly writing a target file into a memory to be detected, and recording the writing times of the target file; when the change value of the service life of the memory to be detected reaches a first preset change value, determining the total write-in quantity of the memory to be detected according to the size of the target file and the write-in times; and determining the detection result of the memory to be detected according to the total writing amount. According to the method and the device, the target file which is larger than the preset threshold value is circularly written into the memory to be detected, and when the change value of the service life of the memory to be detected reaches the first preset change value, whether the memory is qualified or not is detected based on the total writing amount and the expected total writing amount, so that the detection speed of the memory can be improved by adopting a mode of writing the target file which is larger than the preset threshold value, and the detection efficiency of the memory is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without any inventive work.
Fig. 1 is a flowchart of a method for detecting a memory according to the present application.
Fig. 2 is a diagram illustrating an example of a method for detecting a memory provided in the present application.
Fig. 3 is a schematic structural diagram of a terminal device provided in the present application.
Detailed Description
In order to make the purpose, technical solution, and effect of the present application clearer and clearer, the present application is further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of and not restrictive on the broad application.
As used herein, the singular forms "a", "an", "the" and "the" include plural referents unless the context clearly dictates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may also be present. Further, "connected" or "coupled" as used herein may include wirelessly connected or wirelessly coupled. As used herein, the term "and/or" includes all or any element and all combinations of one or more of the associated listed items.
It will be understood by those within the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
In particular implementations, the terminal devices described in embodiments of the present application include, but are not limited to, other portable devices such as mobile phones, laptops, or tablet computers with touch-sensitive surfaces (e.g., touch screens and/or touch pads). It should also be understood that in some embodiments, the device is not a portable communication device, but is a desktop computer having a touch-sensitive surface (e.g., a touch-sensitive display screen and/or touchpad).
In the discussion that follows, a terminal device that includes a display and a touch-sensitive surface is described. However, it should be understood that the terminal device may also include one or more other physical user interface devices such as a physical keyboard, mouse, and/or joystick.
The terminal device supports various applications, such as one or more of the following: a drawing application, a presentation application, a word processing application, a video conferencing application, a disc burning application, a spreadsheet application, a gaming application, a telephone application, a video conferencing application, an email application, an instant messaging application, an exercise support application, a photo management application, a data camera application, a digital video camera application, a web browsing application, a digital music player application, and/or a digital video playing application, among others.
Various applications that may be executed on the terminal device may use at least one common physical user interface device, such as a touch-sensitive surface. The first or more functions of the touch-sensitive surface and the corresponding information displayed on the terminal may be adjusted and/or changed between applications and/or within respective applications. In this way, a common physical framework (e.g., touch-sensitive surface) of the terminal can support various applications with user interfaces that are intuitive and transparent to the user.
It should be understood that, the sequence numbers and sizes of the steps in this embodiment do not mean the execution sequence, and the execution sequence of each process is determined by its function and inherent logic, and should not constitute any limitation on the implementation process of this embodiment.
The inventor finds that with the development of scientific technology, people have higher and higher use requirements on various terminals, and the increase of the use requirements on the terminals brings about the requirement on memories in the terminals. Among them, the 3D TLC storage particles are widely used in the terminal due to advantages of large storage capacity and small volume, for example, UFS memory used in a smart phone and eMMC memory used in a television are used as the 3D TLC storage particles. However, the problem of low detection efficiency is generally existed in the current detection of the erasing and writing life of the 3D TLC storage particles.
In order to solve the above problem, in the embodiment of the present application, a target file is cyclically written into a memory to be detected, and the number of times of writing the target file is recorded; when the change value of the service life of the memory to be detected reaches a first preset change value, determining the total write-in amount of the memory to be detected according to the size of the target file and the write-in times; and determining the detection result of the memory to be detected according to the total writing amount. According to the method and the device, the target file which is larger than the preset threshold value is circularly written into the memory to be detected, and when the change value of the service life of the memory to be detected reaches the first preset change value, whether the memory is qualified or not is detected based on the total writing amount and the expected total writing amount, so that the detection speed of the memory can be improved by adopting a mode of writing the target file which is larger than the preset threshold value, and the detection efficiency of the memory is improved.
The following further describes the content of the application by describing the embodiments with reference to the attached drawings.
The embodiment provides a detection method of a memory, as shown in fig. 1, the method includes:
and S10, circularly writing the target file into the memory to be detected, and recording the writing times of the target file.
Specifically, the target file is preset and used for writing into the memory to be detected, and the size of the target file is larger than a preset threshold value. The preset threshold is preset and used for limiting the size of a target file for detecting the memory to be detected, and the size of the target file is larger than the preset threshold, so that only the file with the file size larger than the preset threshold can be used as the target file for detecting the memory to be detected. In an implementation manner of this embodiment, the preset threshold may be 1024K, and the size of the target file may be 10MB, in other words, the target file with the file size of 10MB is cyclically written into the to-be-detected memory, so that the detection speed may be increased by directly writing the file with the file size of 10MB into the to-be-detected memory, and not by splitting and writing the target file.
For example, the size of the target file is 10MB, the target file is directly written into the to-be-detected memory, after the target file is written into the to-be-detected memory, the target file is written into the to-be-detected memory again, and so on, so as to realize the cyclic writing of the target file into the to-be-detected memory, wherein when the target file is written into the to-be-detected memory in the first direction, the to-be-detected memory is empty, and the erasing frequency of the to-be-detected memory is 0.
The memory to be detected communicates with a terminal device, which operates the memory detection method provided in this embodiment, through a communication link, and the terminal device writes a target file into the memory to be detected through the communication link, where the communication link may include various types of wired communication links or Wireless communication links, for example, the wired communication link includes an optical fiber, a twisted pair, a coaxial cable, or the like, and the Wireless communication link includes a bluetooth communication link, a Wireless-Fidelity (Wi-Fi) communication link, a microwave communication link, or the like. The detection Memory may be a usb disk, a mobile hard disk, a Read-Only Memory (ROM), a random access Memory, a magnetic disk or an optical disk, and various media capable of storing data, and the Memory may be disposed in various terminal devices, for example, a smart phone, a tablet computer, a handheld portable computer, a desktop computer, and the like. In a particular implementation of the present embodiment, the detection memory is an eMMC memory (e.g., a 3D TLC eMMC memory, etc.).
In an implementation manner of this embodiment, the memory to be detected may be one or more memories, and by detecting one memory to be detected or a plurality of memories to be detected, the qualification rate of the memories to be detected may be detected while the qualification rate of the memories to be detected is detected. Of course, when there are a plurality of memories to be tested, the testing process of the plurality of memories to be tested is the same, and the testing process of one memory to be tested is described here. Based on this, before cyclically writing the target file into the memory to be detected, the method further comprises:
and selecting one memory from the memories as a memory to be detected, wherein the equipment models of the memories in the memories are the same.
The memory to be detected may be any one of a plurality of memories, and it is understood that one memory is randomly selected from the plurality of memories to be detected. For example, the memories include a memory a, a memory B, and a memory C, the device model of the memory a, the device model of the memory B, and the device model of the memory C are the same, and the memory to be detected may be the memory a, the memory B, or the memory C.
In an implementation manner of this embodiment, cyclically writing the target file into the to-be-detected memory includes:
and circularly writing the target file into the memory to be detected under a preset system environment, wherein the preset system environment is the system environment in which the memory to be detected works.
It can be understood that, when the storage to be detected is mounted on the terminal device, the system environment adopted by the terminal device is a preset system environment. The preset system environment may be an android system, an IOS system, a Window system, or the like. For example, the preset system environment is an android system, and the memory of the device model is used for a terminal device equipped with the android system; the terminal device operating the detection method of the memory provided by the embodiment is assembled into an android system, and the terminal device writes a target file into the memory to be detected under the android system.
And S20, when the change value of the service life of the memory to be detected reaches a first preset change value, determining the total write-in amount of the memory to be detected according to the size of the target file and the write-in times.
Specifically, the service life includes the number of erasing times, and the change value refers to a change value of the number of erasing times of the memory to be detected, and is used for reflecting a change proportion of the number of erasing times, for example, when the expected number of erasing times of the memory to be detected is 100, and when the expected number of erasing times of the memory to be detected is 90, the change value of the service life of the memory to be detected is 10%. The first predetermined variation value is preset to measure whether the writing operation can be stopped, for example, the first predetermined variation value is 10%,50%, etc. In a specific implementation manner of this embodiment, the first preset variation value may be 10%, and when the variation value of the service life of the to-be-detected memory reaches 10%, the total write amount of the to-be-detected memory is determined based on the size of the target file and the number of writes, so as to detect the to-be-detected memory based on the total write amount.
In this embodiment, the change value of the service life may be determined based on a difference between a first remaining service life of the to-be-detected memory when the target file starts to be written into the to-be-detected memory and a second remaining service life of the to-be-detected memory after the target file is cyclically written. In other words, before the target file is written into the memory to be detected, a first remaining service life of the memory to be detected is obtained, after the target file is written into the memory to be detected each time, a second remaining service life of the memory to be detected is obtained, a difference value between the first remaining service life and the second remaining service life is calculated to obtain a service life change value, and after the service life change value is obtained, the service life change value is compared with a first preset change value; when the service life change value reaches the first preset change value, the change value of the service life of the memory to be detected reaches the first preset change value.
The number of writes refers to the number of writes to the memory to be checked, and then, in the case where the size of the target file is known, the total number of writes may be calculated based on the number of writes and the size of the target file, where the total number of writes is equal to the product of the number of writes and the size of the target file. For example, if the size of the target file is 10MB and the number of writes is 10, the total write amount is 10MB by 10=100mb.
And S30, determining the detection result of the memory to be detected according to the total writing amount.
Specifically, the total write amount is the total amount of files written into the memory to be detected by the terminal device. When the terminal equipment reads and writes data, a mapping address, verification data and the like are added in the memory to be detected, so that the data written by the terminal equipment is not equal to the data written by a controller of the memory to be detected, and the total write quantity written into the memory to be detected is larger than the total write quantity written into the memory to be detected by the terminal equipment.
Based on this, after the total write amount is obtained, a first write amplification factor of the to-be-detected memory needs to be obtained, and the actual write amount of the to-be-detected memory is determined based on the first write amplification factor and the total write amount. The Write Amplification Factor (WAF) refers to that in an actual writing process of a memory, due to the influence of factors such as a memory storage mode and a type of a storage file, a writing amount of the memory is different from an actual storage amount of the memory, specifically, a ratio between a time storage amount and the writing amount of the memory, a numerical value of the Write Amplification Factor is at least 1, and the Write Amplification factors of the memories may be the same or different. In this embodiment, the write amplification factors of the memories with the same device model are the same, and in addition, the first write amplification factor of each memory in the memories with the same device model may be preset, for example, the first write amplification factor may be configured when the memory to be detected is factory-set.
In an implementation manner of this embodiment, determining a detection result of the to-be-detected memory according to the total write amount includes:
determining the actual written total amount corresponding to the memory to be detected according to the written total amount and the first written amplification factor corresponding to the memory to be detected;
determining the actual erasing times corresponding to the memory to be detected according to the actual writing total amount;
and if the absolute value of the difference value between the actual erasing times and the expected erasing times corresponding to the first preset change value is smaller than a preset difference value threshold, judging that the detection result of the memory to be detected is qualified.
Specifically, the detection result includes a pass and a fail, the pass means that the absolute value of the difference between the actual erase count and the expected erase count corresponding to the first preset variation value is smaller than a preset difference threshold, and the fail means that the absolute value of the difference between the actual erase count and the expected erase count corresponding to the first preset variation value is greater than or equal to the preset difference threshold. For example, the preset difference threshold is 20, and if the absolute value of the difference between the actual erasing times and the expected erasing times is 30, the detection result is unqualified; if the absolute value of the difference value between the actual erasing times and the expected erasing times is 10, the detection result is qualified.
The writing amount of the memory is the storage capacity of the memory multiplied by the erasing number, and the storage capacity of the memory to be detected is known, so after the actual total writing amount of the memory to be detected is obtained, the actual erasing number can be determined based on the actual total writing amount, wherein the actual erasing number is equal to the ratio of the actual total writing amount to the storage capacity of the memory to be detected, for example, the storage capacity of the memory to be detected is 32G, the actual total writing amount is 640G, and then the actual erasing number is 640G divided by 32G and is equal to 20. The expected erasing times corresponding to the first preset variation value is the planned erasing times of the memory to be detected, for example, the service life of the memory to be detected is 300 erasing times, the first preset variation value is 10% of the service life, and then the expected erasing times corresponding to the first preset variation value is 30 times.
After the actual erasing times and the expected erasing times are obtained, the difference value between the actual erasing times and the expected erasing times is calculated to obtain the absolute value of the difference value between the actual erasing times and the expected erasing times corresponding to the first preset change value. Generally, the expected erasing times are greater than the actual erasing times, because the service life of the memory jumps too fast when the memory has a bad block or a wafer pollution or a firmware program has a bug, and the expected erasing times are greater than the actual erasing times determined based on the actual writing amount. Therefore, when the absolute value of the difference value between the actual erasing times and the expected erasing times corresponding to the first preset change value is larger than or equal to the preset difference value threshold, the memory can be judged to have a bad block or wafer pollution, or the firmware program has bug, so that the detection result of the memory to be detected is judged to be unqualified, otherwise, the detection result of the memory to be detected can be judged to be qualified.
In one implementation manner of this embodiment, the method further includes:
continuously executing the step of circularly writing the target file into the memory to be detected until the residual service life of the memory to be detected reaches a life residual threshold value so as to obtain a plurality of detection results;
and determining the final detection result of the memory to be detected according to the plurality of detection results.
Specifically, when the change value of the service life of the memory to be detected reaches a first preset change value, after the total write amount of the memory to be detected is determined according to the size of the target file and the number of times of writing, the operation of writing the target file into the memory to be detected in a circulating manner can be executed again until the remaining service life of the memory to be detected reaches a life threshold, the memory to be detected is detected once based on the total write amount reaching the first preset change value each time to obtain a plurality of detection results, and finally, the detection result of the memory to be detected is given based on the plurality of detection results, so that the detection accuracy of the memory to be detected can be improved.
When the detection result of the memory to be detected is determined according to the obtained detection results, whether each detection result in the detection results is qualified or not can be determined, if the detection result is qualified, the detection result of the memory to be detected is qualified, and if at least one detection result is unqualified, the detection result of the memory to be detected is unqualified; or, determining whether the number of the detection results of the plurality of detection results that are qualified is larger than the number of the detection results that are unqualified, if so, determining that the detection result of the memory to be detected is qualified, and if not, determining that the detection result of the memory to be detected is unqualified.
In one implementation manner of this embodiment, as shown in fig. 2, the method further includes:
selecting a preset number of target memories from a plurality of memories, wherein the equipment models of the memories in the plurality of memories are the same;
for each target memory in a preset number of target memories, circularly writing the detection file corresponding to each target memory into each target memory, and recording the writing times of the detection file corresponding to each target memory;
when the change value of the service life of each target memory reaches a second preset change value, determining that the size of a second write amplification factor detection file corresponding to each target memory is smaller than a preset threshold value according to the size of the detection file corresponding to each target memory, the write times corresponding to each target memory and the expected erase times corresponding to the second preset change value;
and selecting a second write amplification factor from the second write amplification factors corresponding to the target memories respectively as the write amplification factor of the memory corresponding to the equipment model.
Specifically, the device models of the respective memories in the plurality of memories are the same, the target memory may be any one of the plurality of memories, the preset number of target memories are different from each other, and the number of the preset number of target memories is smaller than the number of memories in the plurality of memories, for example, the number of memories in the plurality of memories is 100, the number of the preset number of target memories is 10, and the like. In one implementation manner of this embodiment, the memory amount of the target memory may be determined based on the file amount of the detection file, where the memory amount of the target memory is the same as the file amount of the detection file, for example, the file amount of the detection file is 10, and then the memory amount of the target memory is 10. Each target memory in the plurality of target memories corresponds to one detection file, and the sizes of the detection files corresponding to the target memories are different from each other. For example, the preset number of target storages includes a target storage a and a target storage B, and the detection file includes a detection file a and a detection file B, where the detection file corresponding to the target storage a is the detection file a, the detection file corresponding to the target storage B is the detection file B, and the size of the detection file a is different from the size of the detection file B.
In one implementation of this embodiment, as shown in fig. 2, the preset number of target memories is 10, the number of test files is 10, the sizes of the 10 test files are 2K, 4K, 8K, 16K, 32K, 64K, 128K, 256K, 512K and 1024K, and the 10 target memories correspond to the 10 test files one by one. It is understood that one target memory of the 10 target memories cyclically writes 2k of the check file, one target memory cyclically writes 4k of the check file, and one target memory cyclically writes 1024k of the check file.
The second preset variation value may be preset, which is a variation value of the service life, for example, 10%,50%, etc. After the second preset change value is obtained, the expected number of times of erasing corresponding to the second preset change value may be determined based on the service life and the second preset change value, for example, the service life of the target memory is 3000 times of erasing, the second preset change value is 10%, and then the expected number of times of erasing corresponding to the second preset change value is 300.
After the size of the detection file and the number of writing times are obtained, a total writing amount can be determined based on the size of the detection file and the number of writing times, and a total writing amount can be determined based on an expected number of erasing times corresponding to the second preset change value, wherein the total writing amount is equal to a product of the size of the detection file and the number of writing times, and the total writing amount is equal to a product of the expected number of erasing times and the storage capacity of the target storage. After the total write amount and the total desired write amount are obtained, the pair of the total desired write amount and the total write amount may be used as the second write amplification factor of the target memory, so that the second write amplification factor corresponding to each target memory may be obtained.
In an implementation manner of this embodiment, cyclically writing the detection file corresponding to each target storage into each target storage, and recording the number of times of writing the detection file corresponding to each target storage, includes:
and circularly writing the detection files corresponding to the target memories into the target memories under a preset system environment, recording the writing times of the detection files corresponding to the target memories, and setting the system environment as the system environment in which the target memories work.
Specifically, the preset system environment is a system environment in which the memory to be detected works, and it can be understood that, when the memory to be detected is assembled in the terminal device, the system environment adopted by the terminal device is the preset system environment. The preset system environment may be an android system, an IOS system, a Window system, or the like. For example, the preset system environment is an android system, and the memory of the device model is used for a terminal device equipped with the android system; the terminal device operating the detection method of the memory provided by the embodiment is assembled into an android system, and the terminal device writes the detection file into the target memory under the android system.
In an implementation manner of this embodiment, selecting a second write amplification factor from the second write amplification factors corresponding to the target memories as the write amplification factor of the memory corresponding to the device model includes:
selecting the minimum second write amplification factor in the second write amplification factors respectively corresponding to each target memory;
and taking the selected minimum second write amplification factor as the write amplification factor of the memory corresponding to the equipment model.
Specifically, after the second write amplification factors corresponding to the target memories are obtained, the write amplification factor of the memory corresponding to the device model, which is the smallest second write amplification factor among the second write amplification factors corresponding to the target memories, may be selected, and the write amplification factor of each memory corresponding to the device signal may be updated to the smallest second write amplification factor, so that the system environment of the terminal device equipped with the memory may be optimized based on the smallest second write amplification factor, thereby optimizing the write behavior of the terminal device for the memory, and further prolonging the service life of the memory. For example, if the memory of the device signal is used for a smart television, the write amplification factor of the memory configured in the smart television is modified to the minimum second write amplification factor, and the operating system of the smart television is optimized based on the minimum second write amplification factor to optimize the write behavior of the smart television to the memory, so as to prolong the service life of the memory in the smart television.
In summary, the present embodiment provides a method for detecting a memory, the method includes cyclically writing a target file into the memory to be detected, and recording the number of times of writing the target file; when the change value of the service life of the memory to be detected reaches a first preset change value, determining the total write-in amount of the memory to be detected according to the size of the target file and the write-in times; and determining the detection result of the memory to be detected according to the total writing amount. According to the method and the device, the target file which is larger than the preset threshold value is circularly written into the memory to be detected, and when the change value of the service life of the memory to be detected reaches the first preset change value, whether the memory is qualified or not is detected based on the total writing amount and the expected total writing amount, so that the detection speed of the memory can be improved by adopting a mode of writing the target file which is larger than the preset threshold value, and the detection efficiency of the memory is improved.
Based on the detection method of the memory, the embodiment provides a computer-readable storage medium, which stores one or more programs, and the one or more programs can be executed by one or more processors to realize the steps in the method of the embodiment.
Based on the above memory detection method, the present application further provides a terminal device, as shown in fig. 3, including at least one processor (processor) 20; a display screen 21; and a memory (memory) 22, and may further include a communication Interface (Communications Interface) 23 and a bus 24. The processor 20, the display 21, the memory 22 and the communication interface 23 can communicate with each other through the bus 24. The display screen 21 is configured to display a user guidance interface preset in the initial setting mode. The communication interface 23 may transmit information. The processor 20 may call logic instructions in the memory 22 to perform the methods in the embodiments described above.
Furthermore, the logic instructions in the memory 22 may be implemented in software functional units and stored in a computer readable storage medium when sold or used as a stand-alone product.
The memory 22, which is a computer-readable storage medium, may be configured to store a software program, a computer-executable program, such as program instructions or modules corresponding to the methods in the embodiments of the present disclosure. The processor 20 executes the functional application and data processing, i.e. implements the method in the above-described embodiments, by executing the software program, instructions or modules stored in the memory 22.
The memory 22 may include a storage program area and a storage data area, wherein the storage program area may store an operating system, an application program required for at least one function; the storage data area may store data created according to the use of the terminal device, and the like. Further, the memory 22 may include a high speed random access memory and may also include a non-volatile memory. For example, a variety of media that can store program codes, such as a usb disk, a removable hard disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk, or an optical disk, may also be transient storage media.
In addition, the specific processes loaded and executed by the storage medium and the instruction processors in the terminal device are described in detail in the method, and are not stated herein.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions in the embodiments of the present application.
Claims (10)
1. A method for testing a memory, comprising:
circularly writing a target file into a to-be-detected memory, and recording the writing times of the target file, wherein the size of the target file is larger than a preset threshold value;
when the change value of the service life of the memory to be detected reaches a first preset change value, determining the total write-in amount of the memory to be detected according to the size of the target file and the write-in times;
and determining the detection result of the memory to be detected according to the total writing amount.
2. The method of claim 1, wherein before cyclically writing the target file into the memory to be tested, the method further comprises:
selecting one memory from a plurality of memories as the memory to be detected, wherein the equipment models of the memories in the plurality of memories are the same;
the circularly writing the target file into the memory to be detected comprises the following steps:
and circularly writing a target file into the memory to be detected under a preset system environment, wherein the preset system environment is the system environment in which the memory to be detected works.
3. The method according to claim 2, wherein the determining the testing result of the memory to be tested according to the total writing amount comprises:
determining the actual total writing amount corresponding to the memory to be detected according to the total writing amount and the first writing amplification factor corresponding to the memory to be detected;
determining the actual erasing times corresponding to the memory to be detected according to the actual writing total amount;
and if the absolute value of the difference value between the actual erasing times and the expected erasing times corresponding to the first preset change value is smaller than a preset difference value threshold, judging that the detection result of the memory to be detected is qualified.
4. The method according to any one of claims 1-3, further comprising:
continuously executing the step of circularly writing the target file into the memory to be detected until the remaining service life of the memory to be detected reaches a life remaining threshold value so as to obtain a plurality of detection results;
and determining the final detection result of the memory to be detected according to the detection results.
5. The method of claim 1, further comprising:
selecting a preset number of target memories from a plurality of memories, wherein the device models of the memories in the plurality of memories are the same;
for each target memory in the preset number of target memories, circularly writing the detection file corresponding to each target memory into each target memory, and recording the writing times of the detection file corresponding to each target memory;
when the change value of the service life of each target memory reaches a second preset change value, determining a second write amplification factor corresponding to each target memory according to the size of the detection file corresponding to each target memory, the write times corresponding to each target memory and the expected erase and write times corresponding to the second preset change value, wherein the size of the detection file is smaller than a preset threshold value;
and selecting a second write-in amplification factor from the second write-in amplification factors corresponding to the target memories respectively as the write-in amplification factor of the memory corresponding to the equipment model.
6. The method according to claim 5, wherein the cyclically writing the check file corresponding to each target storage into each target storage and recording the number of times of writing the check file corresponding to each target storage comprise:
and circularly writing the detection files corresponding to the target memories into the target memories under a preset system environment, and recording the writing times of the detection files corresponding to the target memories, wherein the preset system environment is the system environment in which the target memories work.
7. The method according to claim 5, wherein selecting a second write amplification factor from the second write amplification factors corresponding to the respective target memories as the write amplification factor of the memory corresponding to the device model comprises:
selecting the minimum second write amplification factor in the second write amplification factors corresponding to each target memory;
and taking the selected minimum second write amplification factor as the write amplification factor of the memory corresponding to the equipment model.
8. The method of claim 5, wherein the sizes of the test files corresponding to the target memories are different from each other.
9. A computer-readable storage medium, characterized in that the computer-readable storage medium stores a detection program of a memory, which when executed by a processor implements the steps in the method according to any one of claims 1-8.
10. A terminal device, characterized in that the terminal device comprises a processor, a memory and a detection program stored in the memory and executable on the processor, and the processor executes the detection program of the memory to implement the steps of the method according to any one of claims 1 to 8.
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| CN117854569A (en) * | 2024-03-05 | 2024-04-09 | 合肥康芯威存储技术有限公司 | Performance test system and performance test method for memory |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117854569A (en) * | 2024-03-05 | 2024-04-09 | 合肥康芯威存储技术有限公司 | Performance test system and performance test method for memory |
| CN117854569B (en) * | 2024-03-05 | 2024-05-24 | 合肥康芯威存储技术有限公司 | Performance test system and performance test method for memory |
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