CN114360619A

CN114360619A - Test method, test device, terminal and storage medium

Info

Publication number: CN114360619A
Application number: CN202111677793.7A
Authority: CN
Inventors: 赖振楠
Original assignee: Hosin Global Electronics Co Ltd
Current assignee: Hosin Global Electronics Co Ltd
Priority date: 2021-12-31
Filing date: 2021-12-31
Publication date: 2022-04-15

Abstract

The invention discloses a method for testing a storage medium, which comprises the following steps: converting the storage medium into a single-layer storage mode; performing read-write test on the storage medium by taking a block as a unit, and identifying a bad block by using a bad block; performing read-write test by taking a page as a unit based on the bad block identifier, and identifying a first bad page identifier for a bad page; converting the storage medium into a multi-layer storage mode; determining a single-layer storage bad page in a single-layer storage mode based on the first bad page identifier, and determining a target multi-layer storage page corresponding to the single-layer storage bad page in a multi-layer storage mode; and performing read-write test on the target multilayer storage page by taking the page as a unit, and identifying a second bad page identifier for a multilayer storage bad page in the target multilayer storage page. The invention also discloses a testing device, a terminal and a storage medium. The invention can improve the read-write test efficiency and reduce the capacity loss caused by identifying bad blocks.

Description

Test method, test device, terminal and storage medium

Technical Field

The present invention relates to the field of testing technologies, and in particular, to a testing method, an apparatus, a terminal, and a storage medium.

Background

Flash memory pellets may be damaged during production and need to be tested. The terminal test in the prior art includes the following two types, the flash memory particles are tested by taking blocks as units, the erasing rule of the flash memory can be relatively fitted, various operations on the flash memory particles are simply realized, and if more bad blocks exist, the whole capacity of the flash memory particles can be greatly reduced.

The flash memory particles are tested by taking the page as a unit, so that specific bad pages can be completely found and marked, the maximization of the capacity of the flash memory is realized, and the efficiency of reading and writing tests on the flash memory is reduced.

Disclosure of Invention

The invention mainly aims to provide a testing method, a testing device, a testing terminal and a computer readable storage medium, and aims to solve the problem that the prior art cannot give consideration to both testing efficiency and capacity loss during testing.

In order to achieve the above object, the present invention provides a test method, including:

converting the storage medium into a single-layer storage mode;

performing read-write test on the storage medium by taking a block as a unit, and identifying a bad block by using a bad block;

performing read-write test by taking a page as a unit based on the bad block identifier, and identifying a first bad page identifier for a bad page;

converting the storage medium into a multi-layer storage mode;

determining a single-layer storage bad page in a single-layer storage mode based on the first bad page identifier, and determining a target multi-layer storage page corresponding to the single-layer storage bad page in a multi-layer storage mode;

and performing read-write test on the target multilayer storage page by taking the page as a unit, and identifying a second bad page identifier for a multilayer storage bad page in the target multilayer storage page.

Optionally, the step of performing a read-write test on the target multi-layer storage page by using a page as a unit, and identifying a second bad page identifier for a multi-layer storage bad page in the target multi-layer storage page further includes:

determining a target word line where the multilayer storage bad page is located based on the second bad page identification;

and identifying weak page identification for pages on the target word line except the multilayer storage bad pages.

Optionally, the step of determining a target word line where the multilayer storage bad page is located based on the second bad page identifier further includes:

determining adjacent word lines of the target word line;

and identifying weak page identifications of pages except the multilayer storage bad pages on the adjacent word lines.

Optionally, the performing a read-write test on the storage medium in units of blocks includes, before the step of identifying a bad block by a bad block:

establishing a mapping block table sub-table;

the reading and writing test is carried out on the storage medium by taking the block as a unit, and the step of identifying the bad block by the bad block comprises the following steps:

reading the mapping block table sub-tables one by one;

and when one mapping block table is read in each time, performing read-write test on the storage medium by taking a block as a unit based on the read mapping block table, and identifying bad blocks by bad blocks.

Optionally, the performing a read-write test in units of pages based on the bad block identifier includes, before the step of identifying a first bad page identifier for a bad page:

establishing a mapping page table;

the step of performing read-write test by taking a page as a unit based on the bad block identifier comprises the following steps of:

reading a mapping page table corresponding to the bad block based on the bad block identifier;

and when the mapping page table is read in each time, performing read-write test by taking a page as a unit based on the bad block identifier and the read mapping page table, and identifying a first bad page identifier for the bad page.

Optionally, the performing a read-write test on the storage medium in units of blocks, where identifying a bad block includes:

establishing a mapping block table, wherein each logic block in the mapping block table is mapped with a physical block correspondingly;

performing read-write test by taking a block as a unit;

adding a bad block identifier in the mapping block table according to a block test result;

the reading and writing test is carried out by taking a page as a unit based on the bad block identification, and the first bad page identification of the bad page identification comprises the following steps:

establishing a mapping page table, wherein each logical page in the mapping page table is mapped to a corresponding physical page;

taking a page as a unit, and performing read-write test on the page in the bad block identified by the identified bad block;

and adding a first bad page identifier to a logic page corresponding to a bad page in the bad block in the mapping page table.

Optionally, the testing method further comprises:

and replacing the existing mapping table with the new mapping table.

In order to achieve the above object, the present invention also provides a test apparatus, comprising:

the block testing module is used for performing read-write test on the storage medium by taking a block as a unit and identifying bad blocks;

the first page testing module is used for performing read-write testing by taking a page as a unit based on the bad block identifier and identifying a first bad page identifier for a bad page;

a second conversion module for converting the storage medium into a multi-layer storage mode;

the determining module is used for determining a single-layer storage bad page in a single-layer storage mode based on the first bad page identifier and determining a target multi-layer storage page corresponding to the single-layer storage bad page in a multi-layer storage mode;

and the second page testing module is used for performing read-write testing on the target multilayer storage page by taking a page as a unit and identifying a second bad page identifier for a multilayer storage bad page in the target multilayer storage page.

In addition, in order to achieve the above object, the present invention further provides a test terminal, where the test terminal includes a memory and a processor, the memory stores a test program, and the test program implements the steps of the test method when executed by the processor.

In addition, to achieve the above object, the present invention also provides a computer readable storage medium having a test program stored thereon, the test program implementing the steps of the test method as described above when executed by a processor.

Compared with the prior art, the test method, the test device, the test terminal and the computer readable storage medium have the advantages that the storage medium is converted into a single-layer storage mode, then the read-write test is carried out on the storage medium in a block unit, bad block identification is carried out on bad blocks, the read-write test is carried out on the bad block identification in a page unit, the first bad page identification is carried out on bad pages, the threshold voltage required to be controlled in the single-layer storage mode is small, the read-write time is short, the erasing life of flash memory particles in the single-layer storage mode is long, at the moment, the read-write test on the blocks or the pages can reduce the abrasion of the flash memory, and the test speed can be accelerated. And finally, performing read-write test on the target multilayer storage page by taking the page as a unit, and identifying a second bad page identifier for the multilayer storage bad page in the target multilayer storage page. The method comprises the steps of carrying out read-write test in a single-layer storage mode to find out the position of a page with problems, and then specifically positioning a damage point in a physical bad page through a multi-layer storage mode, so that on one hand, the read-write test with high speed and low loss can be carried out, on the other hand, the maximization of the capacity of a flash memory can also be ensured, and the capacity loss caused by marking the bad block is reduced while the read-write test efficiency is improved.

Drawings

FIG. 1 is a system diagram of a hardware operating environment according to an embodiment of the present invention;

FIG. 2 is a schematic flow chart of an embodiment of a testing method of the present invention;

FIG. 3 is a diagram illustrating an exemplary structure of a flash memory pellet according to an embodiment of the present invention;

FIG. 4 is an exemplary diagram of word line and bit line relationships in an embodiment of the invention;

FIG. 5 is a diagram illustrating an exemplary relationship between the amount of data stored in the memory cell and the voltage;

FIG. 6 is a diagram illustrating a mapping block representation according to an embodiment of the present invention;

FIG. 7 is a diagram illustrating a mapping page in a single-layer storage mode according to an embodiment of the present invention;

FIG. 8 is a diagram illustrating a mapping page in a multi-level storage mode according to an embodiment of the present invention;

FIG. 9 is a schematic flow chart of another embodiment of a testing method according to the present invention;

FIG. 10 is a schematic perspective view of a word line and a bit line according to an embodiment of the present invention;

FIG. 11 is a diagram illustrating an example of weak page identification in a mapping page table according to an embodiment of the present invention;

FIG. 12 is a flow chart illustrating another exemplary embodiment of a testing method according to the present invention;

FIG. 13 is a schematic flow chart of another embodiment of the testing method of the present invention;

FIG. 14 is a flowchart illustrating another embodiment of the testing method of the present invention.

Detailed Description

It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

In the prior art, the flash memory particles are tested by taking blocks as units, so that the erasing rule of the flash memory can be relatively matched, various operations on the flash memory particles are simply realized, and the overall capacity of the flash memory particles can be greatly reduced if more bad blocks exist.

In order to solve the above technical problems, the present invention provides a test method, in the method, the storage medium is converted into a single-layer storage mode, then a read-write test is performed on the storage medium in units of blocks, a bad block identifier is identified on the bad block, a read-write test is performed in units of pages based on the bad block identifier, a first bad page identifier is identified on the bad page, then the storage medium is converted into a multi-layer storage mode, a single-layer storage bad page in the single-layer storage mode is determined based on the first bad page identifier, a target multi-layer storage page corresponding to the single-layer storage bad page in the multi-layer storage mode is determined, finally, the read-write test is performed on the target multi-layer storage page in units of pages, a second bad page identifier is identified on the multi-layer storage bad page in the target multi-layer storage page, thereby finding out a position of a page with problems in the single-layer storage mode, and then, a damaged point in a physical bad page is specifically positioned through a multilayer storage mode, so that on one hand, a fast and low-loss read-write test can be carried out, on the other hand, the maximization of the capacity of the flash memory can be ensured, and the capacity loss caused by a marked bad block is reduced while the read-write test efficiency is improved.

As shown in fig. 1, fig. 1 is a system structural diagram of a hardware operating environment according to an embodiment of the present invention.

The terminal in the embodiment of the present invention may be a terminal device with computing capability, or a PC, or a mobile terminal device with display function such as a smart phone, a tablet computer, an electronic book reader, an MP3(Moving Picture Experts Group Audio Layer III, motion Picture Experts compression standard Audio Layer 3) player, an MP4(Moving Picture Experts Group Audio Layer IV, motion Picture Experts compression standard Audio Layer 4) player, a portable computer, and the like.

As shown in fig. 1, the terminal may include: a processor 1001, such as a CPU, a network interface 1004, a user interface 1003, a memory 1005, a communication bus 1002. Wherein a communication bus 1002 is used to enable connective communication between these components. The user interface 1003 may include a Display screen (Display), an input unit such as a Keyboard (Keyboard), and the optional user interface 1003 may also include a standard wired interface, a wireless interface. The network interface 1004 may optionally include a standard wired interface, a wireless interface (e.g., WI-FI interface). The memory 1005 may be a high-speed RAM memory or a non-volatile memory (e.g., a magnetic disk memory). The memory 1005 may alternatively be a storage device separate from the processor 1001.

Optionally, the terminal may further include a camera, a Radio Frequency (RF) circuit, a sensor, an audio circuit, a WiFi module, and the like. Such as light sensors, motion sensors, and other sensors. Specifically, the light sensor may include an ambient light sensor that may adjust the brightness of the display screen according to the brightness of ambient light, and a proximity sensor that may turn off the display screen and/or the backlight when the mobile terminal is moved to the ear. As one of the motion sensors, the gravity acceleration sensor can detect the magnitude of acceleration in each direction (generally, three axes), detect the magnitude and direction of gravity when the mobile terminal is stationary, and can be used for applications (such as horizontal and vertical screen switching, related games, magnetometer attitude calibration), vibration recognition related functions (such as pedometer and tapping) and the like for recognizing the attitude of the mobile terminal; of course, the mobile terminal may also be configured with other sensors such as a gyroscope, a barometer, a hygrometer, a thermometer, and an infrared sensor, which are not described herein again.

Those skilled in the art will appreciate that the terminal structure shown in fig. 1 is not intended to be limiting and may include more or fewer components than those shown, or some components may be combined, or a different arrangement of components.

As shown in fig. 1, a memory 1005, which is a kind of computer storage medium, may include therein an operating system, a network communication module, a user interface module, and a test program.

In the terminal shown in fig. 1, the network interface 1004 is mainly used for connecting to a backend server and performing data communication with the backend server; the user interface 1003 is mainly used for connecting a client (user side) and performing data communication with the client; and the processor 1001 may be configured to call the test program stored in the memory 1005 and perform the following operations:

converting the storage medium into a single-layer storage mode;

converting the storage medium into a multi-layer storage mode;

Further, the processor 1001 may call the test program stored in the memory 1005, and also perform the following operations:

determining adjacent word lines of the target word line;

establishing a mapping block table sub-table;

reading the mapping block table sub-tables one by one;

Further, the processor 1001 may call the test program stored in the memory 1005, and further perform the following operations:

establishing a mapping page table;

performing read-write test by taking a block as a unit;

and replacing the existing mapping table with the new mapping table.

Referring to fig. 2, fig. 2 is a schematic flow chart of an embodiment of a testing method of the present invention, and in some embodiments, the testing method includes:

step S10, converting the storage medium into a single-layer storage mode.

In some embodiments, during testing, the storage medium may be first converted into a single-layer storage mode, and specifically, the storage medium may be converted between the single-layer storage mode and the multi-layer storage mode by setting a corresponding voltage. The threshold voltage required to be controlled in the single-layer storage mode is less, and the time consumed by reading and writing is short. The storage medium of the present invention refers to a medium having a function of storing data, and in the embodiment, the storage medium is exemplified as a flash memory.

Specifically, as shown in fig. 3 and 4, fig. 3 is a diagram illustrating a structure of a flash memory granule according to an embodiment of the present invention; FIG. 4 is an exemplary diagram of word line and bit line relationships in an embodiment of the invention. The flash memory grain is provided with a plurality of planes, each Plane is composed of a plurality of Block blocks, and each Block is composed of a plurality of page pages.

One word line wl (word) corresponds to one or a plurality of pages, and specifically, the storage mode of the flash memory is a single-layer storage mode or a multi-layer storage mode. For single-level storage mode SLC, one word line corresponds to one Page; the multilevel storage mode includes at least a double-level storage Mode (MLC) in which one word line corresponds to 2 pages (Lower Page and upper Page), and a triple-level storage mode (TLC) in which TLC corresponds to 3 pages (Lower Page, Middle Page, upper Page). The size of a Page corresponds to the number of memory cells on a word line and also corresponds to the number of bit lines bl (bitline).

A single-layer memory cell and a multi-layer memory cell with the same area can store different data amounts, and the capacity, PE (erasing times) number and read-write time of flash memory particles are different according to the data amount stored in each memory cell. The writing operation of the flash memory is to write electrons into the memory cell, and the reading operation is to read the voltage in the memory cell by using a reference voltage. As shown in fig. 5, fig. 5 is a graph illustrating a relationship between a stored data amount and a voltage of a memory cell according to an embodiment of the present invention, wherein a horizontal axis represents a threshold voltage and a vertical axis represents a stored data amount of the memory cell. As shown in a of fig. 5, for an SLC, a memory cell storing two states can be considered to have two threshold voltages, and when a sampled voltage value falls within a range of 1, it is considered to be 1, and when it falls within a range of 0, it is considered to be 0. As shown in fig. 5 b and c, for MLC or TLC, more memory states means more threshold voltages. The more the number of electrons of one memory cell is divided, the more meticulous the control of the number of the entering electrons is required during writing, so the longer the writing time is; similarly, when reading, different reference voltages are needed to be tried to read, and the reading time is prolonged to a certain extent. The larger the number of electrons written in the memory cell, the more easily the material (insulating layer) of the memory cell is worn away, so that the threshold voltage bias causes a read error.

And step S20, performing read-write test on the storage medium by taking the block as a unit, and identifying the bad block.

Based on the above steps, in the single-layer storage mode, the storage medium can be tested in units of blocks. In the block-level test, the original test data can be written into the block, and then the data is read from the block, and then the data is subjected to exclusive-or comparison with the original test data, whether the data has errors is judged according to the exclusive-or result, if the data has errors, the integrity of the data is damaged in the data storage process of the block, and the block is a bad block. And when the block is determined to be a bad block, identifying the bad block identification. Generally, the bad block identifier is a preset identifier character for identifying a block as a bad block, and the identifier character may be stored in a set position in the block to identify the bad block identifier for the bad block, or the bad block identifiers of all the bad blocks may be stored in the same position.

In some embodiments, as shown in fig. 6, fig. 6 is an illustration of a mapping block representation in an embodiment of the invention. In the single-layer storage mode, a mapping block table may be established, where each logical block maps one physical block. And performing read-write test by taking the block as a unit. It is to be understood that fig. 6 is directed to collect the bad blocks in one place for simplicity, and the bad blocks and the normal blocks in the block table are mixed together in actual situations. In some embodiments, a situation where bad blocks are intermixed with normal blocks in the mapping block table may be maintained; in some embodiments, the mapping block table may also be sorted and updated when all the block tests are completed, and the bad blocks are collected together and separated from the normal blocks.

In some embodiments, the mapping block table is not additionally established, but the block identification codes are directly read one by one to be tested in a block mode. And when the test result is a bad block, adding a preset position of the bad block identifier in the bad block so as to realize the step of identifying the bad block. The block identification codes of all the bad blocks can also be stored in a unified preset position which is not limited to the bad blocks, and the identification codes of the blocks are used as bad block identifications.

And step S30, performing read-write test by taking the page as a unit based on the bad block identifier, and identifying a first bad page identifier for the bad page.

After the test with the block as the unit is finished, the block with the test result of the bad block can be determined, at the moment, the block with the test result of the bad block can be further tested, which pages in the bad block are the bad pages can be determined, repeated tests are not needed for the block with no problem in the test result of the block, and therefore the test efficiency is improved. The first bad page identification refers to a bad page identification added by a page test in a single-layer storage mode.

Specifically, as shown in fig. 7, fig. 7 is a diagram illustrating a mapping page in the single-layer storage mode according to an embodiment of the present invention. In some embodiments, in single-level storage mode, the mapping page table 1, i.e., the mapping page table shown in fig. 7, is established. At this time, the read-write test is not performed on the whole flash memory particles, and at this time, the read-write test is sequentially performed on the marked bad blocks by taking the pages in the mapping page table 1 as units according to the bad block identifiers in the block table, so as to find out the bad pages in the bad blocks, and add the first bad page identifiers at the corresponding logical pages of the mapping page table 1. The erasing life of the flash memory particles is longer in the single-layer storage mode, and at the moment, the abrasion of the flash memory can be reduced through the read-write test of the block or the page, and the test speed can be accelerated.

In addition, in some embodiments, a mapping page table may not be additionally established, after determining a bad block based on a bad block identifier, a test is performed one by one in a page unit based on a page identifier in the bad block, the bad page identifier is added to a page of the bad page as a test result, the bad page identifier and the page identifier may be associated in a unified storage location outside the bad page, or the page identifiers of all the bad pages may be stored in a unified storage location of the bad page identifier, so as to complete the first bad page identifier of the bad page identifier.

Step S40, converting the storage medium into a multi-layer storage mode.

After the page test in the single-layer storage mode is completed, a bad page in the single-layer storage mode can be determined and a first bad page identifier is made for the bad page in the single-layer storage mode. Therefore, it is necessary to convert the storage medium from a single-layer storage mode to a multi-layer storage mode.

Step S50, determining a single-layer storage bad page in the single-layer storage mode based on the first bad page identifier, and determining a target multi-layer storage page corresponding to the single-layer storage bad page in the multi-layer storage mode.

The single-layer storage bad page refers to a single-layer storage page which has a unqualified test result in the single-layer storage mode and is added with a first bad page identifier. The target multi-layered memory page refers to a multi-layered memory page corresponding to a single-layered memory bad page in the multi-layered memory mode. The page size in a flash chip is typically fixed (can be 4K or 8K or 16K), assuming 4K. In the single-layer storage mode, one logical page is associated with one 4K physical page, namely one logical page is associated with one word line; when the multi-level memory mode is converted, one physical page becomes 8K or 12K, so that one physical page is associated with two or three logical pages, i.e., a plurality of logical pages share one word line.

Step S60, performing a read-write test on the target multi-layer storage page by taking a page as a unit, and identifying a second bad page identifier for a multi-layer storage bad page in the target multi-layer storage page.

Specifically, the second bad page identifier refers to a bad page identifier added by a page test in the multi-layer storage mode. As shown in fig. 8, fig. 8 is a diagram illustrating a mapping page in a multi-level storage mode according to an embodiment of the present invention. In some embodiments, a mapped page table in multi-level storage mode may be established for testing in units of pages. In the multi-layer storage mode, according to the first bad page identifier in the mapping page table 1, finding out a marked physical page, sequentially performing a read-write test on the marked physical page by taking a page in the mapping page table 2 (i.e. the mapping page table in the multi-layer storage mode) as a unit, finding out a bad page in the multi-layer storage mode, and adding a bad page identifier at a corresponding logical page of the mapping page table 2. When the flash memory is used for reading and writing, when the logical page in the page table is detected to have a bad page mark, the physical address corresponding to the page can be skipped over, and the reading and writing of the next page can be directly carried out. The method comprises the steps of carrying out read-write test in a single-layer storage mode to find out the position of a page with problems, and then specifically positioning a damage point in a physical bad page through a multi-layer storage mode, so that on one hand, the quick and low-loss read-write test can be carried out, and on the other hand, the maximization of the capacity of a flash memory can be ensured. In some embodiments, the testing method of the present invention may further include step S70, replacing the existing mapping table with the new mapping table. Specifically, in the test process, after the mapping table is established and the bad block/page is marked, the previous table can be hidden or deleted, only one mapping table is used, and the newly established mapping block/page table is used for replacing the original mapping block/page table, so that the number of the mapping tables is reduced, the influence on the storage capacity is avoided, the later mapping table has more complete and comprehensive mapping information, the storage space is conveniently managed, only one mapping table needs to be read in the subsequent reading and writing process, and the reading and writing speed is improved.

In the method for testing the storage medium, the storage medium is converted into a single-layer storage mode, then the storage medium is subjected to read-write test by taking a block as a unit, bad block identification is carried out on bad blocks, the read-write test is carried out by taking a page as a unit based on the bad block identification, the bad page is identified by a first bad page identification, the threshold voltage required to be controlled in the single-layer storage mode is less, the read-write time is short, the erasing life of flash memory particles in the single-layer storage mode is longer, at the moment, the read-write test on the block or the page can reduce the abrasion of the flash memory, and the test speed can be accelerated. And finally, performing read-write test on the target multilayer storage page by taking the page as a unit, and identifying a second bad page identifier for the multilayer storage bad page in the target multilayer storage page. The method comprises the steps of carrying out read-write test in a single-layer storage mode to find out the position of a page with problems, and then specifically positioning a damage point in a physical bad page through a multi-layer storage mode, so that on one hand, the read-write test with high speed and low loss can be carried out, on the other hand, the maximization of the capacity of a flash memory can also be ensured, and the capacity loss caused by marking the bad block is reduced while the read-write test efficiency is improved.

Referring to fig. 9, fig. 9 is a schematic flow chart of another embodiment of the testing method of the present invention. In some embodiments, step S60 is followed by:

step S80, determining a target word line where the multilayer storage bad page is located based on the second bad page identifier.

The target word line refers to the word line where the bad page is stored in each multi-level identified by the second bad page in the multi-level storage mode. The location of each multi-layer memory bad page may be determined first, and then the word line where each multi-layer memory bad page is located, i.e., the target word line, may be determined. When the multilayer memory bad pages are one, or when a plurality of multilayer memory bad pages are on the same word line, the corresponding target word line is one; the multilayer memory bad pages are multiple, and when the multilayer memory bad pages are distributed on at least two different word lines, the target word lines are more than two.

Step S90, identify weak page identifications for pages on the target word line other than the multi-level storage bad page.

Specifically, as shown in fig. 10, fig. 10 is a schematic perspective view of a word line and a bit line in an embodiment of the invention. The intersections of the bit lines and word lines constitute the memory cells in the page. The bottom logic of the bad page is the error of the memory cell, mainly the abrasion of the memory cell caused by multiple times of erasing and writing, which causes the error of the data stored inside. Therefore, when data is written, if the threshold voltage in the flash memory is not changed, the memory cell with excessive wear may cause electron emission when data is written, resulting in overflow of data and disturbance of the read/write voltage of the memory cell near the memory cell. Therefore, after the capacity is ensured by marking the bad pages, the affected pages can be further selected. The affected pages are defined as weak pages. The weak page can be read and written normally, but is more likely to have errors in subsequent data reading and writing than other normal pages. In the multi-layer storage mode, a plurality of logical pages share one word line, so that pages on the same word line as a bad page are classified as weak pages, and therefore, in some embodiments, weak page identifications can be identified for pages on a target word line except for the multi-layer storage bad page. The weak page identifier refers to an identifier character used for identifying the weak page.

In some embodiments, step S80 may be followed by:

step S100, determining adjacent word lines of the target word line;

and step S110, identifying weak page identifications of pages except the multilayer storage bad pages on the adjacent word lines.

It is to be understood that, on the one hand, a plurality of logical pages share one word line in the multi-level storage mode, and therefore, pages on the same word line as a bad page are classified as weak pages; on the other hand, since the entire flash memory cell is three-dimensionally present, word lines adjacent to a problematic word line are also affected, and pages of word lines adjacent to word lines in rows and columns are also classified as weak pages. Therefore, after the target word line is determined, word lines adjacent to the target word line in a space range, namely adjacent word lines, may exist multi-layer storage bad pages identifying second bad page identifications on the adjacent word lines, may not exist multi-layer storage bad pages, and may identify weak page identifications on the multi-layer storage pages except the multi-layer storage bad pages on the adjacent word lines.

The page with the weak page mark determined by the test method process is not directly involved in data reading and writing of the user, but is used as a spare page. When the normal page capacity is insufficient or garbage collection is carried out, cold data in the normal page is put into the weak page for storage. Cold data may be identified using an LFU (Least Frequently Used) algorithm or an LRU (Least recently Used) algorithm.

In some embodiments, as shown in fig. 11, fig. 11 is an exemplary diagram illustrating an identification of a weak page in a mapping page table in the embodiment of the present invention, and the weak page identification may be added by establishing the mapping page table, or the weak page identification may be identified in the mapping page table in an existing multi-layer storage mode.

In some embodiments, the weak page identifier may also be identified by identifying the weak page identifier at a preset position in the weak page, or setting an association relationship between the weak page identifier and the page identifier itself at a uniform preset position, or adding the page identifier of the weak page to a preset weak page identifier storage location.

In the test method, the target word line where the multilayer storage bad page is located is determined based on the second bad page identification; and identifying weak page identification for pages on the target word line except the multilayer storage bad pages. Determining adjacent word lines of the target word line; and identifying weak page identifications of pages except the multilayer storage bad pages on the adjacent word lines. By the mode, on the premise of not influencing the storage capacity, the page with the defective storage capacity can be identified, a more comprehensive test result is obtained, and the storage space is managed at the later stage.

Referring to fig. 12, fig. 12 is a schematic flow chart of another embodiment of the testing method of the present invention. In some implementations, step S20 may be preceded by step S120 of building a mapping block table sublist.

Mapping block table sublist refers to building a mapping block table based on partial tiles. In some implementations, the mapping table may have an excessively large volume due to an excessive number of storage blocks, so that a plurality of small mapping block tables, that is, mapping block table sub-tables may be established, and the mapping block table sub-tables corresponding to the range where the block is located may be written when the block is read and written in the test process. If the flash memory has 0-100 blocks, a mapping block table sub-table of 0-20, a mapping block table sub-table of 21-40, a mapping block table sub-table of 41-60, a mapping block table sub-table of 61-80, and a mapping block table sub-table of 81-100 are established. It can be understood that the mapping block table may be established in the production process, and read directly in the test process, or may be specially established based on the test requirement when the test requirement exists, and the test may be read after the establishment.

Step S20 includes:

step S21, reading the mapping block table sub-tables one by one;

and step S22, when reading in one mapping block table sub-table each time, performing read-write test on the storage medium by taking a block as a unit based on the read mapping block table sub-table, and identifying bad blocks.

Based on the test method, when performing read-write test with a block as a unit, reading the mapping block table sub-tables corresponding to 0-20 blocks, performing read-write test on the 0-20 blocks, identifying bad block identifications for the blocks with bad block test results of the 0-20 blocks, sequentially reading the mapping block table sub-tables in the range of the rest other blocks after completing the read-write test, and repeating the test process of the 0-20 blocks.

Based on the test method, the bad block identification can be respectively identified for the test result of each mapping block table based on the mapping block table sub-table, and the bad block identification can also be uniformly identified for all blocks. Specifically, in some embodiments, for each mapping block table sublist, in the testing process, a new mapping block table sublist may be established, a bad block identifier is added to the new mapping block table sublist, and when the testing is completed, the read mapping block table sublist is replaced with the new mapping block table sublist. In some embodiments, in the test process, only one new mapping block table may be established, where the new mapping block table includes mapping relationships of all the blocks, and in the test, when each mapping block table is read for test, all the bad block identifiers are added to the new mapping block table. And when the sub-table test of all the mapping block tables is finished, replacing all the mapping block tables with the newly established mapping block tables.

In the test method, a mapping block table is established; reading the mapping block table sub-tables one by one; and when one mapping block table is read in each time, performing read-write test on the storage medium by taking a block as a unit based on the read mapping block table, and identifying bad blocks by bad blocks. By the aid of the mode, testing can be performed on the basis of partitions, the phenomenon that data reading and writing speed is affected due to overlarge table size of the mapping block is avoided, the data reading and writing speed is improved, and accordingly testing speed is improved.

Referring to fig. 13, fig. 13 is a schematic flow chart of another embodiment of the testing method of the present invention. In some embodiments, step S30 is preceded by:

step S130, establishing a mapping page table.

Mapping a page table refers to establishing a mapping page table based on a partial block or a page of a partial block. Based on the test method, in order to improve the data reading and writing speed and improve the test efficiency, a mapping page table division table can be established in a similar mapping block table division table mode. When the mapping sub-tables are established, one mapping block table can be used and associated with a plurality of mapping page table sub-tables, namely, one mapping block table is used for all blocks, one mapping page table sub-table is associated with one or more blocks, the whole mapping block table is read in during reading and writing, and then the corresponding page table is read in according to the read and written blocks. Of course, in some embodiments, the table partitioning may be performed at both the block and page levels, with one mapping block table partition associating multiple mapping page table partitions.

Step S30 includes:

step S31, reading a mapping page table corresponding to the bad block based on the bad block identifier;

step S32, each time the mapping page table is read, performing a read-write test on the basis of the bad block identifier and the read mapping page table in units of pages, and identifying a first bad page identifier with respect to the bad page.

Based on the test method, after the test of the block level is finished by reading the whole mapping block table or reading the mapping block table sub-tables one by one, the bad block is determined based on the bad block identification, the mapping page table sub-table corresponding to the bad block is determined, the mapping page table sub-table corresponding to the bad block is read, as one mapping page table sub-table is associated with one or more blocks, the bad block corresponding to the bad block identification is determined from the mapping page table sub-table, the read-write test is carried out on the page of the bad block by taking the page as a unit, and the test result is the first bad page identification of the bad page. It will be appreciated that the map page table may be read and tested once for each bad block, and the same map page table may be read multiple times due to the presence of multiple bad blocks, but each read is tested for a different bad block in units of pages.

In the test method, a mapping page table is established; reading a mapping page table corresponding to the bad block based on the bad block identifier; and when the mapping page table is read in each time, performing read-write test by taking a page as a unit based on the bad block identifier and the read mapping page table, and identifying a first bad page identifier for the bad page. By the mode, the test is carried out based on the mapping page table, the influence on the data reading and writing speed due to the overlarge volume of the mapping page table is avoided, the data reading and writing speed is improved, and therefore the test speed is improved.

Referring to fig. 14, fig. 14 is a schematic flow chart of another embodiment of the testing method of the present invention. In some embodiments, step S20 includes:

step S23, establishing a mapping block table, wherein each logical block in the mapping block table is mapped with a physical block;

step S24, performing read-write test by taking a block as a unit;

step S25, add bad block mark in the mapping block table according to the block test result;

step S30 includes:

step S33, establishing a mapping page table, wherein each logical page in the mapping page table is mapped with a physical page;

step S34, taking page as unit, reading and writing the page in the bad block marked by the marked bad block;

step S35, add a first bad page identifier to the logical page corresponding to the bad page in the bad block in the mapping page table.

Specifically, based on the above test method, in the single-layer storage mode, a mapping block table may be established, where each logical block in the block table maps one physical block. And performing read-write test by taking the block as a unit. In some embodiments, a situation where bad blocks are intermixed with normal blocks in the mapping block table may be maintained; in some embodiments, the mapping block table may also be sorted and updated when all the block tests are completed, and the bad blocks are collected together and separated from the normal blocks.

As shown in fig. 7, in some embodiments, in single-layer storage mode, the mapping page table 1, i.e., the mapping page table shown in fig. 7, is established. At this time, the read-write test is not performed on the whole flash memory particles, and at this time, the read-write test is sequentially performed on the marked bad blocks by taking the pages in the mapping page table 1 as units according to the bad block identifiers in the block table, so as to find out the bad pages in the bad blocks, and add the first bad page identifiers at the corresponding logical pages of the mapping page table 1. The erasing life of the flash memory particles is longer in the single-layer storage mode, and at the moment, the abrasion of the flash memory can be reduced through the read-write test of the block or the page, and the test speed can be accelerated.

It is understood that, in some embodiments, the mapping block table and/or the mapping page table may also be established in the form of a table during the test, that is, the mapping block table and/or the mapping page table are established, and the newly established table is used to replace the original existing mapping table, where the table establishing manner may refer to the above embodiments and is not described herein again.

In the test method, a mapping block table is established, wherein each logic block in the mapping block table is mapped with a physical block correspondingly; performing read-write test by taking a block as a unit; establishing a mapping page table, wherein each logical page in the mapping page table is mapped to a corresponding physical page; taking a page as a unit, and performing read-write test on the page in the bad block identified by the identified bad block; and adding a first bad page identifier to a logic page corresponding to a bad page in the bad block in the mapping page table. Adding a bad block identifier in the mapping block table according to a block test result; by the method, the test and identification are carried out by establishing the mapping block table or the mapping page table, so that the identification record and management of bad blocks are facilitated, and a better test result management effect is realized.

In addition, the invention also provides a testing device.

Wherein, the testing device of the invention comprises:

the first conversion module is used for converting the storage medium into a single-layer storage mode;

For the specific implementation of the testing apparatus of the present invention, reference may be made to various embodiments of the testing method of the present invention, which are not described herein again.

In addition, the invention also provides a test terminal.

The test terminal comprises a processor and a memory, wherein the memory is stored with a test program, and the test program realizes the steps of the test method when being executed by the processor.

The method implemented when the test program running on the processor is executed may refer to each embodiment of the test method of the present invention, and details are not described here.

In addition, the embodiment of the invention also provides a computer readable storage medium.

The computer-readable storage medium of the present invention has stored thereon a test program which, when executed by a processor, implements the steps of the test method as described above.

It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or system that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or system. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or system that comprises the element.

The above-mentioned serial numbers of the embodiments of the present invention are merely for description and do not represent the merits of the embodiments.

Through the above description of the embodiments, those skilled in the art will clearly understand that the method of the above embodiments can be implemented by software plus a necessary general hardware platform, and certainly can also be implemented by hardware, but in many cases, the former is a better implementation manner. Based on such understanding, the technical solution of the present invention may be embodied in the form of a software product, which is stored in a storage medium (e.g., ROM/RAM, magnetic disk, optical disk) as described above and includes instructions for enabling a terminal device (e.g., a mobile phone, a computer, a server, an air conditioner, or a network device) to execute the method according to the embodiments of the present invention.

The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.

Claims

1. A method of testing a storage medium, the method comprising:

converting the storage medium into a single-layer storage mode;

converting the storage medium into a multi-layer storage mode;

2. The method for testing as claimed in claim 1, wherein said step of performing a read-write test on said target multi-layered memory page in units of pages, and identifying a second bad page identifier for a multi-layered memory bad page in said target multi-layered memory page further comprises:

3. The testing method of claim 2, wherein the step of determining the target wordline on which the multi-level stored bad page is located based on the second bad page identification further comprises, after the step of determining the target wordline on which the multi-level stored bad page is located:

determining adjacent word lines of the target word line;

4. The method of claim 1, wherein the step of performing read-write tests on the storage medium in units of blocks, and identifying bad blocks comprises:

establishing a mapping block table sub-table;

reading the mapping block table sub-tables one by one;

5. The method of claim 1, wherein the step of performing a read-write test on a page-by-page basis based on the bad block identifier, identifying a first bad page identifier for a bad page comprises:

establishing a mapping page table;

6. The test method of any one of claims 1-5, wherein the performing read-write tests on the storage medium in units of blocks, and identifying bad blocks comprises:

performing read-write test by taking a block as a unit;

7. The testing method of claim 6, further comprising:

and replacing the existing mapping table with the new mapping table.

8. A test apparatus, characterized in that the test apparatus comprises:

9. A test terminal, characterized in that the test terminal comprises a memory and a processor, the memory having stored thereon a test program, which when executed by the processor implements the steps of the test method according to any one of claims 1-7.

10. A computer-readable storage medium, characterized in that the computer-readable storage medium has stored thereon a test program which, when executed by a processor, implements the steps of the test method according to any one of claims 1 to 7.