CN115181935A - Processing technology, equipment and fastener of film sensor based on metal substrate - Google Patents
Processing technology, equipment and fastener of film sensor based on metal substrate Download PDFInfo
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- CN115181935A CN115181935A CN202210929317.8A CN202210929317A CN115181935A CN 115181935 A CN115181935 A CN 115181935A CN 202210929317 A CN202210929317 A CN 202210929317A CN 115181935 A CN115181935 A CN 115181935A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 183
- 239000002184 metal Substances 0.000 title claims abstract description 183
- 239000000758 substrate Substances 0.000 title claims abstract description 68
- 238000012545 processing Methods 0.000 title claims abstract description 43
- 238000005516 engineering process Methods 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 40
- 239000010409 thin film Substances 0.000 claims abstract description 37
- 229910000679 solder Inorganic materials 0.000 claims abstract description 25
- 238000010438 heat treatment Methods 0.000 claims abstract description 20
- 239000010408 film Substances 0.000 claims abstract description 11
- 238000001816 cooling Methods 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 173
- 230000007704 transition Effects 0.000 claims description 45
- 239000011241 protective layer Substances 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 30
- 230000008569 process Effects 0.000 claims description 19
- 239000000956 alloy Substances 0.000 claims description 15
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- 229910045601 alloy Inorganic materials 0.000 claims description 14
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 14
- 229910003460 diamond Inorganic materials 0.000 claims description 14
- 239000010432 diamond Substances 0.000 claims description 14
- 229910052718 tin Inorganic materials 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000005083 Zinc sulfide Substances 0.000 claims description 7
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 238000003860 storage Methods 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 7
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 7
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 7
- 238000009210 therapy by ultrasound Methods 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
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- 229910001069 Ti alloy Inorganic materials 0.000 description 4
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 4
- 229910000423 chromium oxide Inorganic materials 0.000 description 4
- 239000002346 layers by function Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 239000002033 PVDF binder Substances 0.000 description 3
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 3
- 238000005328 electron beam physical vapour deposition Methods 0.000 description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
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- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
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- 238000005260 corrosion Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
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- 239000007769 metal material Substances 0.000 description 2
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- 238000002604 ultrasonography Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/06—Soldering, e.g. brazing, or unsoldering making use of vibrations, e.g. supersonic vibrations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
- C23C14/0611—Diamond
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
- C23C14/0629—Sulfides, selenides or tellurides of zinc, cadmium or mercury
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0635—Carbides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/0641—Nitrides
- C23C14/0652—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
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- Organic Chemistry (AREA)
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- Other Surface Treatments For Metallic Materials (AREA)
Abstract
The invention belongs to the technical field of thin film sensors, and particularly relates to a processing technology, equipment and a fastener of a thin film sensor based on a metal substrate, which comprises the following steps: the method comprises the following steps: forming a piezoelectric layer and an insulating protection layer on the end face of the metal substrate layer by layer; step two: arranging an annular mask on the surface of the insulating protection layer; step three: preparing molten metal, and immersing a surface to be welded of a metal substrate into the molten metal in a posture that the surface to be welded faces the molten metal; step four: and taking the metal substrate out of the molten metal, placing the metal solder for preparing the electrode layer on the surface to be welded, heating the metal solder to a molten state, preserving heat for a set time, and cooling to form the electrode layer on the surface to be welded, thus obtaining the film sensor. The processing technology solves the problems of poor reliability and low processing efficiency of the outer electrode of the thin film sensor.
Description
Technical Field
The invention belongs to the technical field of thin film sensors, and particularly relates to a processing technology, equipment and a fastener of a thin film sensor based on a metal substrate.
Background
With the development of the country and the progress of science and technology, large-scale infrastructure is more and faster. The fastener is widely applied to high-speed rail, ships, heavy industry, petrochemical industry, aviation, wind power and recreation facilities as industrial rice. Meanwhile, the fastener faces various environmental influences, and once the fastener reaches a certain degree, the fastener is easy to deform and loosen. If the fastener of key position is not found to be loose in time, the structure is failed if the fastener is light, and catastrophic results are caused if the fastener is heavy. The traditional measuring methods include a torque pulling method, a resistance strain gage method, an optical measurement mechanics method and a magneto-resistance method. Technical products with pretightening force indication in the current market are bolts with color-changing liquid bags, detection rotating heads, detection rings, pointer detection rings, detection pins and detection pads. Aiming at the current requirements, an ultrasonic transducer in-situ growth technology based on a thin-film piezoelectric material is developed independently, and trial production is completed on various base materials such as high-strength steel, titanium alloy and the like and various fasteners. However, the film electrode grown in situ based on physical vapor deposition has lower density, low working efficiency, longer time consumption and higher cost.
In order to solve the problem that the bolt pretightening force of key structural parts is not monitored in place in the railway operation process, the Chinese patent application with the publication number of CN105258836A adopts an intelligent bolt provided with a piezoelectric ceramic device to detect the pretightening force. However, the piezoelectric ceramic device and the bolt are adhered by the couplant glue, and the high firmness and reliability are not achieved, so that the service life of the product technology and the adaptation to the environment have great problems.
The patent application with the Chinese publication number of CN206234223U provides a special fastener device for solving the problem that the bolts may be loosened due to essential devices for fixing a plurality of large-scale equipment such as fan bases, overhead towers and the like, so that serious accidents occur to the large-scale equipment. The technology also has the problem of unreliable connection between the core piezoelectric component and the bolt, which affects the consistency of signals on one hand and the overall service environment and service life on the other hand.
The above methods for manufacturing the thin film sensor do not solve the problems of low reliability and low processing efficiency of the outer electrode in the thin film sensor
The present invention has been made in view of this situation.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a processing technology, equipment and a fastener of a thin film sensor based on a metal substrate, which are used for solving the problems of poor reliability and low processing efficiency of an outer layer electrode of the thin film sensor.
In order to solve the technical problem, a first aspect of the present invention provides a process for manufacturing a metal substrate-based thin film sensor, including the following steps:
the method comprises the following steps: forming a piezoelectric layer and an insulating protection layer on the end face of the metal substrate layer by layer;
step two: arranging an annular mask on the surface of the insulating protective layer, wherein the insulating protective layer positioned in the annular mask and the insulating protective layer positioned outside the annular mask form a surface to be welded;
step three: preparing a molten metal, and immersing the surface to be welded into the molten metal with the metal substrate in a posture that the surface to be welded faces the molten metal;
step four: and taking the metal substrate out of the molten metal, placing the metal solder for preparing the electrode layer on the surface to be welded, heating the metal solder to a molten state, preserving heat for a set time, and cooling to form the electrode layer on the surface to be welded, thereby obtaining the film sensor.
The invention provides a processing technology of a thin film sensor based on a metal substrate, which comprises the following steps:
the method comprises the following steps: forming a piezoelectric layer, an insulating protection layer and a transition layer on the end face of the metal substrate layer by layer;
step two: arranging an annular mask on the surface of the transition layer, wherein the transition layer positioned in the annular mask and the transition layer positioned outside the annular mask form a surface to be welded;
step three: preparing a molten metal, and immersing the surface to be welded into the molten metal with the surface to be welded facing the molten metal;
step four: and taking the metal substrate out of the molten metal, placing the metal solder for preparing the electrode layer on the surface to be welded, heating the metal solder to a molten state, preserving heat for a set time, and cooling to form the electrode layer on the surface to be welded, thus obtaining the film sensor.
In a further optional manner, based on the processing technology of the first aspect or the second aspect of the present invention, in the third step, the preparing of the metal melt is heating a metal of the same material as the electrode layer to a molten state.
On the basis of the processing technology of the first aspect or the second aspect of the present invention, further optionally, in the third step, the surface to be welded is subjected to ultrasonic treatment during the process of immersing the surface to be welded in the molten metal.
On the basis of the processing technology of the first aspect or the second aspect of the present invention, further optionally, in the fourth step, the metallic solder is placed on the surface to be welded in the form of paste, powder or sheet.
On the basis of the processing technology of the first aspect or the second aspect of the present invention, further optionally, the material of the electrode layer is any one of tin, aluminum and an alloy thereof;
and/or the piezoelectric layer is made of any one of zinc oxide, aluminum nitride, cadmium sulfide, zinc sulfide and oxidized tan;
and/or the insulating protection layer is made of any one of aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, silicon carbide, diamond and doped diamond.
Based on the processing method of the first aspect or the second aspect of the present invention, further optionally, the material of the transition layer is any one of titanium, nickel, zirconium, and an alloy thereof.
The thin film sensor based on the metal substrate manufactured by the process method sequentially comprises the piezoelectric layer, the insulating protective layer, the transition layer and the electrode layer from inside to outside, and the transition layer can be omitted according to different material components of the outer electrode. For example, if active elements such as Ti, zr, hf, and V are added to the material of the outer layer electrode, the transition layer may not be added, and if the outer layer electrode is a metal material such as simple substance Sn and Al, a transition layer is sputtered to improve wettability. The piezoelectric layer is a functional layer structure for converting acoustic signals and electric signals, and the insulating protective layer is used for protecting the piezoelectric layer, so that the influence of various complex service environments on the piezoelectric layer is reduced, and the service life of the sensor is prolonged. The transition layer is mainly used for enhancing the metal connection effect of the protective layer and the outer layer electrode, and the outer layer metal electrode has the effect of sending and receiving electric signals. The material and size of the metal substrate can be designed into substrates with different shapes and materials according to different application scenes, and the metal substrate is preferably a bolt substrate. The annular mask arranged on the insulating protective layer separates the inner electrode and the outer electrode of the electrode layer to prevent the conduction of the inner electrode and the outer electrode.
The material of the metal substrate can be any one of stainless steel, titanium alloy, high-temperature alloy and aluminum alloy; the piezoelectric layer is made of any one of zinc oxide, aluminum nitride, cadmium sulfide, zinc sulfide, oxidized tan, lithium niobate, lead titanate and polyvinylidene fluoride, and the thickness of a film formed by the piezoelectric layer is 0.1-30 μm; the electrode layer is made of any one of tin, aluminum and alloys thereof, and the thickness of a thin film formed by the electrode layer is 0.1-50 μm. The insulating protective layer is made of wear-resistant and corrosion-resistant high-resistance insulating materials, and the design of the insulating protective layer can not only play a role in protecting the piezoelectric layer materials, reduce the performance influence of the external environment on the piezoelectric layer materials, but also play a role in electrical insulation and isolation. The material of the insulating protective layer is optionally any one of chromium oxide, aluminum nitride, silicon oxide, silicon nitride, silicon carbide, diamond and doped diamond, and the material of the insulating protective layer forms a thin film with a thickness of 0 μm to 50 μm (other than 0). The material of the transition layer is any one of Sn, ag and Ti, and the thickness of the transition layer is 2-3 μm.
The invention aims at the problems that the welding performance of the insulating protective layer and the surface metal electrode is poor due to the large surface energy of the insulating protective layer, such as chromium oxide and poor wetting and spreading performance of brazing filler metal, if the outer layer electrode is made of metal materials such as simple substance Sn, al and the like, a transition layer needs to be sputtered to improve the wetting performance, the application space of the electrode is expanded, and the reliable surface connection is realized for different metal electrodes under different service conditions.
In the processing technology provided by the invention, in the first step, functional layers are sequentially grown on the end face of a metal substrate by a piezoelectric layer and an insulating protective layer, the piezoelectric layer and the metal substrate, the piezoelectric layer and the insulating protective layer and a transition layer are all bonded at an atomic level, the atomic level is bonded by a metal bond, for example, the piezoelectric layer and the insulating protective layer are produced on the end face of the metal substrate by adopting a magnetron sputtering processing technology, the insulating protective layer with a certain thickness of 2-3 mu m is deposited on the surface of the insulating protective layer by adopting an electron beam physical vapor deposition (EB-PVD), and the transition layer can be omitted according to different components of an outer electrode. If the transition layer is generated on the insulating protective layer, the insulating protective layer is cleaned by adopting an organic solution before the transition layer is generated on the insulating protective layer, and the organic solution can be an acetone solution.
And step two, when the transition layer is arranged, preparing an annular mask on the surface of the transition layer by using a glue spreader, wherein the transition layer in the annular mask and the transition layer outside the outer ring of the annular mask form a surface to be welded. When the transition layer is not arranged, an annular mask is prepared on the surface of the insulating protective layer by using a glue spreader, and the insulating protective layer in the inner ring of the annular mask and the insulating protective layer outside the outer ring of the annular mask form a surface to be welded. The annular mask is used for distinguishing the inner electrode from the outer electrode, the size of the annular mask is determined according to the size of the bolt, and the annular mask can be in a circular shape optionally.
In the third step, the metal that is helpful for bonding the electrode layer and the surface to be welded is heated to a temperature higher than the melting point, for example, to 20 ℃ higher than the melting point, so that the metal is in a molten state to form a molten metal, and then the surface to be welded is immersed in the molten metal, so that the molten metal is adhered to the surface to be welded. The molten metal is preferably obtained by heating a metal of the same material as that used for preparing the electrode layer to a molten state.
And in the fourth step, taking out the bolt subjected to hot dipping of the molten metal, presetting the pasty, powdery or flaky metal brazing filler metal for preparing the electrode layer on the surface to be welded, then putting the metal substrate into a vacuum furnace, or directly putting the metal substrate into an atmospheric environment or a vacuum environment according to the difference of surface electrode materials, then heating the brazing filler metal to a molten state, for example, heating the brazing filler metal by using an induction coil so that the electrode metal is distributed in an inner ring and an outer ring of an annular mask to form an inner electrode and an outer electrode, preserving the heat for a set time, for example, 3min-5min so that the electrode layer metal can be fully diffused with the protective layer, and then cooling.
A third aspect of the present invention provides a processing apparatus for carrying out the processing proposed in the first or second aspect of the present invention, the processing apparatus comprising:
the storage device is used for containing molten metal;
the clamping device is used for clamping the metal substrate;
a control device for controlling the holding device to hold the metal substrate in a posture in which the surface to be welded faces the molten metal, and controlling the holding device to move in the molten metal direction so that the surface to be welded is immersed in the molten metal.
Further optionally, the apparatus further comprises an ultrasonic device for performing ultrasonic treatment on the surface to be welded during the process of immersing the surface to be welded in the molten metal.
The processing equipment comprises a base, a storage device is arranged on the base, a containing cavity is arranged in a discharging device and used for containing molten metal which is beneficial to combination of a surface to be welded and a metal electrode, and preferably, a heating device is further arranged on the base and used for heating metal in the storage device to form molten metal. Preferably, ultrasonic means, such as an ultrasonic generator, are also provided to facilitate the connection between the molten metal and the surface to be welded by emitting ultrasound at a natural frequency. The clamping device is similar to a mechanical arm structure and clamps a metal substrate, the control device controls the movement of the clamping mechanism, after the clamping mechanism clamps the metal substrate, the control mechanism controls the movement of the clamping mechanism to invert the metal substrate so that the surface to be welded faces the molten metal, and then the control mechanism controls the clamping mechanism to continuously move downwards until the surface to be welded is in contact with the molten metal, so that the molten metal is adhered to the surface to be welded, and meanwhile, other functional layers on the metal substrate are required to be located outside the molten metal.
In a fourth aspect, the present invention provides a thin film sensor manufactured by the processing method of the first aspect or the second aspect, or manufactured by the processing apparatus of the third aspect.
After adopting the technical scheme, compared with the prior art, the invention has the following beneficial effects:
(1) The invention achieves the atomic-scale combination between the insulating protective layer and the electrode layer or between the transition layer and the electrode layer by brazing the outer-layer metal electrode, thereby improving the reliability of the outer-layer electrode.
(2) Compared with physical vapor deposition, the outer layer electrode processing by adopting the brazing method has higher density of the outer layer electrode, shorter process time, improved efficiency and reduced time cost.
(3) The processing technology of the invention can be carried out in atmospheric environment, thus greatly reducing the requirement of the technological environment and leading the processing technology to be simpler.
(4) The metal electrode layer made of tin, aluminum and alloy materials of tin and aluminum has strong corrosion resistance, the service life of the sensor is prolonged, and the application space of the sensor is expanded.
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention, are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention without limiting the invention to the right. It is obvious that the drawings in the following description are only some embodiments and that for a person skilled in the art, other drawings can also be derived from them without inventive effort. In the drawings:
FIG. 1: is a process flow chart of the processing technology of the first embodiment of the invention.
FIG. 2: is a process flow chart of the processing technology of the second embodiment of the invention.
FIG. 3: is a structural diagram of a processing apparatus according to a third embodiment of the present invention.
FIG. 4: is a structural diagram of a metal substrate-based thin film sensor according to a fourth embodiment of the present invention.
FIG. 5: is a top view of fig. 4.
Wherein: 1-an electrode layer; 2-a transition layer; 3-insulating protective layer; 4-a piezoelectric layer; 5-a metal substrate; 6-ring mask; 8-a heating device; 9-an ultrasonic wave generating device; 10-a molten metal; 11-base.
It should be noted that the drawings and the description are not intended to limit the scope of the inventive concept in any way, but to illustrate it by a person skilled in the art with reference to specific embodiments.
Detailed Description
In the description of the present invention, it should be noted that the terms "inside", "outside", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, which are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and operate, and thus, should not be construed as limiting the present invention.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," "contacting," and "communicating" are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; may be directly connected or indirectly connected through an intermediate. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The thin film sensor in the prior art has the problems of poor reliability of the outer layer electrode and low processing efficiency, and the embodiment of the invention aims to provide a processing technology, equipment and a control method of the thin film sensor, which can improve the reliability of the outer layer electrode and the processing efficiency of the outer layer electrode.
Example one
In conjunction with the process flow diagram of fig. 1, the thin film sensor based on the metal substrate 5 of the present embodiment includes the following steps:
the method comprises the following steps: forming a piezoelectric layer 4 and an insulating protective layer 3 on the end face of a metal substrate 5 layer by layer; forming a piezoelectric layer 4 and an insulating protection layer 3 layer by layer on the end face of a metal substrate 5 by adopting a magnetron sputtering processing technology;
step two: arranging an annular mask 6 on the surface of the insulating protection layer 3, wherein the insulating protection layer 3 positioned in the annular mask 6 and the insulating protection layer 3 positioned outside the annular mask 6 form surfaces to be welded; an annular mask 6 between the inner electrode and the outer electrode is manufactured on the surface of the insulating protective layer 3 by a glue spreader;
step three: preparing a molten metal 10, immersing the surface to be welded of the metal substrate 5 in the molten metal 10 in a posture in which the surface to be welded faces the molten metal 10; preparing a molten metal 10 from a metal solder which is made of the same material as the electrode layer 1, and preferably performing ultrasonic treatment on a surface to be welded when the surface to be welded is immersed in the molten metal 10, namely applying ultrasonic waves with a natural frequency to the surface to be welded to promote connection between the molten metal 10 and the protective layer, wherein the piezoelectric layer 4 and the insulating protective layer 3 can be positioned outside the molten metal 10 or immersed in the molten metal 10. The molten metal 10 may alternatively be made of a solder for preparing the electrode layer 1.
Step four: and taking the metal substrate 5 out of the molten metal 10, placing the metal solder for preparing the electrode layer 1 on the surface to be welded, heating the metal solder to a molten state, preserving heat for a set time, and cooling to form the electrode layer 1 on the surface to be welded, thereby obtaining the film sensor. And placing the metal solder for preparing the electrode layer 1 on a surface to be welded in a paste, powder or sheet shape, placing a sample in a vacuum environment or an atmospheric environment, heating the metal solder to a molten state, preserving heat for 3min-5min, and then cooling.
In this embodiment, the metal substrate 5 is made of any one of stainless steel, titanium alloy, high temperature alloy, and aluminum alloy; the piezoelectric layer 4 is made of any one of zinc oxide, aluminum nitride, cadmium sulfide, zinc sulfide, oxidized tan, lithium niobate, lead titanate and polyvinylidene fluoride; the material of the electrode layer 1 is any one of tin, aluminum, and an alloy thereof. The material of the insulating protection layer 3 is any one of chromium oxide, aluminum nitride, silicon oxide, silicon nitride, silicon carbide, diamond, and doped diamond.
Example two
With reference to the process flow diagram of fig. 2, the thin film sensor based on the metal substrate 5 of the present embodiment includes the following steps:
the method comprises the following steps: forming a piezoelectric layer 4, an insulating protection layer 3 and a transition layer 2 on the end surface of a metal substrate 5 layer by layer; forming a piezoelectric layer 4 and an insulating protection layer 3 layer by layer on the end face of a metal substrate 5 by adopting a magnetron sputtering processing technology, preferably cleaning the surface of the insulating protection layer 3 by adopting an acetone solution, and generating a transition layer 2 on the surface of the insulating layer by adopting an electron beam physical vapor deposition method;
step two: arranging an annular mask 6 on the surface of the transition layer 2, wherein the transition layer 2 positioned in the annular mask 6 and the transition layer 2 positioned outside the annular mask 6 form surfaces to be welded; an annular mask 6 between the inner electrode and the outer electrode is manufactured on the surface of the transition layer 2 by a glue spreader;
step three: preparing a molten metal 10, immersing the surface to be welded of the metal substrate 5 in the molten metal 10 in a posture in which the surface to be welded faces the molten metal 10; preparing a molten metal 10 from a metal solder which is made of the same material as the electrode layer 1, and preferably performing ultrasonic treatment on a surface to be welded when the surface to be welded is immersed in the molten metal 10, namely applying ultrasonic waves with a natural frequency to the surface to be welded to promote connection between the molten metal 10 and the protective layer, wherein the piezoelectric layer 4, the insulating protective layer 3 and the transition layer 2 can be positioned outside the molten metal 10 or immersed in the molten metal 10. The molten metal 10 may alternatively be made of a solder for preparing the electrode layer 1.
Step four: and taking the metal substrate 5 out of the molten metal 10, placing the metal solder for preparing the electrode layer 1 on the surface to be welded, heating the metal solder to a molten state, preserving heat for a set time, and cooling to form the electrode layer 1 on the surface to be welded, thereby obtaining the film sensor. Placing the metal solder for preparing the electrode layer 1 on the surface to be welded in the form of paste, powder or sheet, placing the sample in vacuum environment or atmospheric environment, heating the metal solder to molten state, keeping the temperature for 3-5 min, and cooling
In this embodiment, the metal substrate 5 is made of any one of stainless steel, titanium alloy, high temperature alloy, and aluminum alloy; the piezoelectric layer 4 is made of any one of zinc oxide, aluminum nitride, cadmium sulfide, zinc sulfide, oxidized tan, lithium niobate, lead titanate and polyvinylidene fluoride; the material of the electrode layer 1 is any one of tin, aluminum, and an alloy thereof. The material of the insulating protection layer 3 is any one of chromium oxide, aluminum nitride, silicon oxide, silicon nitride, silicon carbide, diamond and doped diamond. The material of the transition layer 2 is any one of Sn, ag and Ti.
EXAMPLE III
In this embodiment, a structure diagram of a processing apparatus for implementing the processing technologies of the first embodiment and the second embodiment is shown, and with reference to the structure diagram of the processing apparatus in fig. 3, the processing apparatus in this embodiment includes a base 11, a storage device is arranged on the base 11, a containing cavity is arranged in the storage device, and a molten metal 10 containing a solder of an electrode layer 1 is contained in the containing cavity. The base 11 is further provided with a heating device 8, and the electrode layer 1 brazing filler metal in the accommodating cavity is heated to a molten state by the heating device 8. The heating means 8 is preferably a high-frequency induction coil disposed at the outer periphery of the housing chamber. The processing equipment of the embodiment further comprises a clamping device (not shown in the figure) and a control device (not shown in the figure), wherein the clamping device is of a structure similar to a mechanical arm, the clamping mechanism clamps the metal substrate 5, the control device controls the movement of the clamping mechanism, after the clamping mechanism clamps the metal substrate 5, the control mechanism controls the movement of the clamping mechanism to invert the metal substrate 5 so that the surface to be welded faces the molten metal 10, and then the clamping mechanism is controlled to continuously move downwards until the surface to be welded contacts the molten metal 10 so that the molten metal 10 adheres to the surface to be welded, and meanwhile, other functional layers on the metal substrate 5 are required to be located outside the molten metal 10.
The processing equipment of the embodiment also comprises an ultrasonic wave generating device 9, the ultrasonic wave generating device 9 generates ultrasonic waves with fixed frequency to the material storage device, and the base 11 transmits the ultrasonic waves with the natural frequency to the position between the molten metal 10 and the surface to be treated to carry out ultrasonic treatment so as to promote connection between the brazing filler metal and the surface to be treated.
Example four
In this embodiment, a thin film sensor based on a metal substrate 5 is manufactured by using the processing method of the first embodiment or the second embodiment or the processing equipment of the third embodiment, as shown in fig. 4 and fig. 5, the metal substrate 5 may be a bolt fastener, and the thin film sensor includes a piezoelectric layer 4, an insulating protection layer 3, a transition layer 2, and an electrode layer 1 on an end surface of the metal substrate 5 from inside to outside. The transition layer 2 can be omitted depending on the material composition of the outer electrode layer 1. When the transition layer 2 is provided, an annular mask 6 is formed on the transition layer 2, and when the transition layer 2 is not provided, an annular mask 6 is formed on the insulating protection layer 3, and the electrode layer 1 is positioned inside and outside an inner ring and an outer ring of the annular mask 6. The piezoelectric layer is made of any one of zinc oxide, aluminum nitride, cadmium sulfide, zinc sulfide and oxidized tan; the insulating protective layer is made of any one of aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, silicon carbide, diamond and doped diamond; the transition layer is made of any one of titanium, nickel, zirconium and alloy thereof; the material of the electrode layer is any one of tin, aluminum and an alloy thereof.
Comparative example
The thin film sensor with the same material as the thin film sensor in the first embodiment and the thin film sensor in the second embodiment are manufactured by adopting a physical vapor deposition method.
Test examples
The method of the first embodiment and the second embodiment is adopted to prepare the thin film sensor based on the metal substrate, and the whole process consumes less time than 1 hour.
In the comparative example, the time of the whole process for preparing the film sensor of the outer electrode by adopting the physical vapor deposition method is over 10 hours.
Therefore, the method for preparing the metal substrate-based thin film sensor can remarkably improve the production efficiency.
Although the present invention has been described with reference to a preferred embodiment, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A processing technology of a thin film sensor based on a metal substrate is characterized by comprising the following steps:
the method comprises the following steps: forming a piezoelectric layer and an insulating protection layer on the end face of the metal substrate layer by layer;
step two: arranging an annular mask on the surface of the insulating protection layer, wherein the insulating protection layer positioned in the annular mask and the insulating protection layer positioned outside the annular mask form a surface to be welded;
step three: preparing a molten metal, and immersing the surface to be welded into the molten metal with the metal substrate in a posture that the surface to be welded faces the molten metal;
step four: and taking the metal substrate out of the molten metal, placing the metal solder for preparing the electrode layer on the surface to be welded, heating the metal solder to a molten state, preserving heat for a set time, and cooling to form the electrode layer on the surface to be welded, thereby obtaining the film sensor.
2. A processing technology of a thin film sensor based on a metal substrate is characterized by comprising the following steps:
the method comprises the following steps: forming a piezoelectric layer, an insulating protection layer and a transition layer on the end face of the metal substrate layer by layer;
step two: arranging an annular mask on the surface of the transition layer, wherein the transition layer positioned in the annular mask and the transition layer positioned outside the annular mask form a surface to be welded;
step three: preparing a molten metal, and immersing the surface to be welded into the molten metal with the surface to be welded facing the molten metal;
step four: and taking the metal substrate out of the molten metal, placing the metal solder for preparing the electrode layer on the surface to be welded, heating the metal solder to a molten state, preserving heat for a set time, and cooling to form the electrode layer on the surface to be welded, thereby obtaining the film sensor.
3. The process according to claim 1 or 2, wherein in the third step, the preparing of the metal melt is heating the metal of the same material as the electrode layer to a molten state.
4. The process for manufacturing a metal substrate-based thin film sensor according to claim 1 or 2, wherein in the third step, the surface to be welded is further subjected to ultrasonic treatment while being immersed in the molten metal.
5. The process for manufacturing a metal substrate-based thin film sensor according to claim 1 or 2, wherein in the fourth step, the metal solder is placed on the surface to be welded in the form of paste, powder or sheet.
6. The process for manufacturing a metal substrate-based thin film sensor according to claim 1 or 2, wherein the material of the electrode layer is any one of tin, aluminum and alloys thereof;
and/or the piezoelectric layer is made of any one of zinc oxide, aluminum nitride, cadmium sulfide, zinc sulfide and oxidized tan;
and/or the insulating protection layer is made of any one of aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, silicon carbide, diamond and doped diamond.
7. The process for manufacturing a metal substrate-based thin film sensor according to claim 2, wherein the material of the transition layer is any one of titanium, nickel, zirconium and alloys thereof.
8. A processing apparatus for carrying out the process of any one of claims 1 to 7, comprising:
the storage device is used for containing molten metal;
the clamping device is used for clamping the metal substrate;
a control device for controlling the holding device to hold the metal substrate in a posture in which the surface to be welded faces the molten metal, and controlling the holding device to move in the molten metal direction so that the surface to be welded is immersed in the molten metal.
9. The processing apparatus according to claim 8, further comprising an ultrasonic device for ultrasonically treating the surface to be welded while the surface to be welded is immersed in the molten metal.
10. A thin film sensor made using the process of any one of claims 1 to 7, or the process equipment of any one of claims 8 to 9;
the thin film sensor comprises a piezoelectric layer, an insulating protection layer, a transition layer and an electrode layer; alternatively, the thin film sensor comprises a piezoelectric layer, an insulating protective layer and an electrode layer;
the piezoelectric layer is made of any one of zinc oxide, aluminum nitride, cadmium sulfide, zinc sulfide and oxidized tan;
the insulating protective layer is made of any one of aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, silicon carbide, diamond and doped diamond;
the transition layer is made of any one of titanium, nickel, zirconium and alloy thereof;
the electrode layer is made of any one of tin, aluminum and alloy thereof.
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| CN215264028U (en) * | 2021-06-07 | 2021-12-21 | 三三智能科技(日照)有限公司 | Ultrasonic ranging sensor based on PVDF piezoelectric film |
| CN114752900A (en) * | 2022-03-23 | 2022-07-15 | 大连理工大学 | Preparation, release and transfer mounting method of thin film sensor |
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| US5322205A (en) * | 1991-04-22 | 1994-06-21 | Nippon Aluminum Co., Ltd. | Joining method of aluminum member to dissimilar metal member |
| US20060144154A1 (en) * | 2002-10-01 | 2006-07-06 | Naohiro Ueno | Piezoelectric sensor and input device comprising same |
| CN111504541A (en) * | 2020-04-20 | 2020-08-07 | 中物院成都科学技术发展中心 | Fastener with stress sensing function and suitable for being used in high-corrosion environment and thin film transduction sensing system |
| CN215264028U (en) * | 2021-06-07 | 2021-12-21 | 三三智能科技(日照)有限公司 | Ultrasonic ranging sensor based on PVDF piezoelectric film |
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