CN115180589A - Manufacturing method of functional structure device oriented to atom and near-atom scale - Google Patents
Manufacturing method of functional structure device oriented to atom and near-atom scale Download PDFInfo
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- CN115180589A CN115180589A CN202210864922.1A CN202210864922A CN115180589A CN 115180589 A CN115180589 A CN 115180589A CN 202210864922 A CN202210864922 A CN 202210864922A CN 115180589 A CN115180589 A CN 115180589A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 54
- 229910052751 metal Inorganic materials 0.000 claims abstract description 109
- 239000002184 metal Substances 0.000 claims abstract description 109
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 50
- 239000010703 silicon Substances 0.000 claims abstract description 50
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 34
- 238000005516 engineering process Methods 0.000 claims abstract description 27
- 229920000642 polymer Polymers 0.000 claims abstract description 25
- 238000005530 etching Methods 0.000 claims abstract description 23
- 239000003292 glue Substances 0.000 claims abstract description 23
- 238000005323 electroforming Methods 0.000 claims abstract description 18
- 238000000151 deposition Methods 0.000 claims abstract description 13
- 238000000609 electron-beam lithography Methods 0.000 claims abstract description 11
- 238000004070 electrodeposition Methods 0.000 claims abstract description 10
- 238000001259 photo etching Methods 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 25
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 24
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 24
- 229920002120 photoresistant polymer Polymers 0.000 claims description 22
- 239000010409 thin film Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 14
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052804 chromium Inorganic materials 0.000 claims description 10
- 239000011651 chromium Substances 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 7
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- 238000000576 coating method Methods 0.000 claims description 6
- 239000002861 polymer material Substances 0.000 claims description 6
- 238000007493 shaping process Methods 0.000 claims description 6
- 238000010894 electron beam technology Methods 0.000 claims description 5
- 239000002103 nanocoating Substances 0.000 claims description 4
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- 239000007788 liquid Substances 0.000 claims description 2
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 46
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- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 2
- 239000002120 nanofilm Substances 0.000 description 2
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- 238000011160 research Methods 0.000 description 2
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/0046—Surface micromachining, i.e. structuring layers on the substrate using stamping, e.g. imprinting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/005—Bulk micromachining
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses a method for manufacturing an atomic and near atomic scale oriented functional structure device. The manufacturing method sequentially comprises the steps of electron beam lithography, atomic layer deposition, electroforming, mold stripping, metal film corrosion, nano imprinting and demolding of a polymer functional device; the other manufacturing method sequentially comprises the steps of photoetching, atomic layer deposition, selective etching, glue removal, silicon etching, side wall etching, atomic layer deposition, electroforming, mold stripping, corrosion, nano-imprinting and demolding of a polymer functional device. The invention combines the limit processing capability of electron beam lithography on the nano-scale structure, the advantages of atomic-scale thickness controllable deposition of an atomic layer deposition technology and atomic sequential electrodeposition of an electroforming technology, breaks through the limit of the existing semiconductor processing technology by the superposition of various micro-nano manufacturing technologies, and realizes the precise manufacturing of a smaller-scale structure on the basis of the nano-structure, namely the manufacturing of an atomic and near atomic scale functional structure device.
Description
Technical Field
The invention belongs to the technical field of atomic and near-atomic scale manufacturing and semiconductor processing, and particularly relates to a manufacturing method of an atomic and near-atomic scale functional structure-oriented device.
Background
With the deep development of micro-nano technology and micro-electro-mechanical system technology, the structure of devices forming a system becomes more complex, and the requirement on high-resolution micro-nano processing becomes higher and higher. For example, in the fields of quantum, optical quantum, electronic, and other applications, the minimum feature size of core devices has reached several nanometers or even smaller. It is difficult to realize batch processing of several nano-scale structures by optimizing existing micro-nano fabrication techniques and semiconductor processing techniques because their processing approaches their physical limits. But the advent of the new generation of extremely tiny devices is inevitable, and the fabrication technology to implement the new generation of devices is necessarily atomic scale.
As early as 1990, the possibility of atomic scale fabrication was demonstrated by the important study of the first realization of manipulation of a single atom by IBM, usa using a scanning tunneling microscope. Three paradigms of manufacturing were proposed in 2013 by the micro-nano manufacturing laboratory of Tianjin university, and after indicating that atomic and near atomic scale manufacturing (ACSM) is the core technology of manufacturing III, the brand new field is widely concerned by scholars at home and abroad. On the basis of atomic and near-atomic scale manufacturing functions, many excellent scientific researchers are engaged in research in the field, wherein the key difficulty is how to construct an atomic scale structure through a manufacturing technical means to realize specific functions and realize batch production, which is a development trend of breaking through the current leading technological bottleneck and focusing on the next generation manufacturing technology, and has great significance for future scientific and technical development and high-end component manufacturing.
However, implementing a new generation of component atomic and near atomic scale manufacturing requires the development of new manufacturing equipment, which is a lengthy process. On the contrary, based on the advantages of the current manufacturing technology, research can be conducted as early as possible from the viewpoint of a new manufacturing method. The electron beam lithography technology has shown ultra-high resolution for fine structure processing, and studies reported so far have found that the minimum achievable line width dimension is 6nm; the atomic layer deposition technology can realize the controllable deposition of the thickness of the single atom of the film; electroforming techniques have replication accuracy at the surface atomic level. By combining the excellent processing limits of these fabrication techniques on micro-structures, fabrication of atomic and near-atomic scale functional structure devices will be possible through rational design of processing methods.
Disclosure of Invention
The invention provides a manufacturing method of an atomic and near atomic scale functional structure device, and aims to break through the bottleneck problem of the current semiconductor processing technology in manufacturing a functional structure device with the size of several nanometers and even with the atomic and near atomic scale.
The invention provides a manufacturing method of an atomic and near atomic scale oriented functional structure device, which is characterized by sequentially comprising the following steps:
(1) An electron beam lithography step;
firstly, coating electronic glue on a silicon wafer substrate, preparing a nanoscale pattern structure by using electron beam exposure treatment on the electronic glue after pre-baking, and obtaining the electronic glue pattern structure on the silicon wafer after post-baking, developing and shaping;
(2) An atomic layer deposition step;
isotropically depositing a metal film with the thickness of the atomic layer by layer on the electronic glue pattern by utilizing an atomic layer deposition technology, so that the line width of the nano pattern structure manufactured by electron beam lithography is closed as much as possible;
(3) Electroforming;
electroforming the pattern structure after the atomic layer deposition, and accurately copying the electronic glue pattern electrodeposition onto a metal mold to obtain a metal convex mold;
(4) Demolding the metal mold;
corroding the combination of the metal mold and the silicon substrate by using potassium hydroxide/sodium hydroxide, and completely chemically corroding the silicon wafer and releasing to obtain a metal convex mold covered by the metal film with the atomic layer deposition remained;
(5) Corroding the metal film;
according to the difference of the chemical characteristics of the metal film deposited by the atomic layer and the metal mold material, selecting a corrosive to corrode the residual metal film to obtain a pure metal convex mold;
(6) Nano-imprinting;
performing molecular coating on the surface of the metal convex mold in advance to promote nondestructive demolding of the mold and the polymer, and then transferring the pattern structure of the metal convex mold to the polymer material by using nano imprinting by using the metal convex mold as a template;
(7) Demolding the polymer functional device;
and (4) cleaning the polymer object obtained by imprinting to obtain the concave polymer functional device with special application.
A manufacturing method of an atomic and near atomic scale oriented functional structure device is characterized by sequentially comprising the following steps:
(1) Photoetching;
firstly, coating photoresist on a silicon wafer substrate, preparing a micron/nanometer scale pattern structure by utilizing ultraviolet light/electron beam exposure to process the photoresist after prebaking, and obtaining the micron/nanometer scale photoresist pattern structure with the line width on the silicon wafer after postbaking, developing and shaping;
(2) An atomic layer deposition step;
isotropically depositing a metal thin film having an atomic layer thickness on the photoresist pattern using an atomic layer deposition technique;
(3) A selective etching step;
selectively removing the metal film material deposited on the horizontal plane of the photoresist pattern by utilizing sputtering reverse etching, and reserving the metal film on the inner side wall of the photoresist pattern;
(4) Removing the glue;
removing the photoresist pattern by using a glue remover;
(5) A silicon etching step;
taking the metal film reserved on the side wall as a mask, etching the silicon substrate by a dry method, and obtaining a pattern structure with the line width in a micrometer/nanometer range and the depth in a nanometer range on the silicon substrate;
(6) Etching the side wall;
corroding the side wall thin film by using corrosive liquid corresponding to the side wall metal thin film to obtain an etched silicon wafer pattern with atomic and near-atomic scale line width and nanoscale height;
(7) An atomic layer deposition step;
isotropically depositing a metal film on the etched silicon wafer pattern by utilizing an atomic layer deposition technology;
(8) Electroforming;
electroforming the pattern structure after the atomic layer deposition to obtain a metal concave die;
(9) A metal demolding step;
corroding the combination of the metal mold and the silicon substrate by using potassium hydroxide/sodium hydroxide, and completely chemically corroding the silicon wafer and releasing to obtain a metal concave mold covered by the metal film with the residual atomic layer deposition;
(10) Corroding the metal film;
according to the difference of the chemical properties of the metal film deposited by the atomic layer and the metal mold material, selecting a corrosive to corrode the residual metal film so as to obtain a pure metal concave mold;
(11) Nano-imprinting;
carrying out molecular coating on the surface of the concave metal mold in advance to promote lossless demolding of the mold and the polymer, and then transferring the pattern structure of the concave metal mold onto a polymer material by using nano imprinting with the concave metal mold as a template;
(12) Demolding the polymer functional device;
and (4) cleaning the polymer object obtained by stamping to obtain the convex polymer functional device with special application.
A manufacturing method for an atomic and near atomic scale functional structure device is characterized in that in the step (1), the electronic glue has the characteristics of ultrahigh resolution and high etching resistance, and a structure smaller than 10nm or even smaller can be obtained through a simple process.
A manufacturing method of a device facing to an atomic and near atomic scale functional structure is characterized in that the metal film deposited on the silicon wafer substrate by the atomic layer in the step (2) is a material which not only has a conductive function, but also can be used as a bonding layer.
The manufacturing method of the functional structure device facing the atomic scale and the near atomic scale is characterized in that the line width and the height of the metal convex mold in the step (3) are accurately controlled by the thickness of the atomic layer deposition metal film.
A manufacturing method for an atomic and near atomic scale functional structure device is characterized in that a metal thin film deposited on a silicon wafer substrate in an atomic layer mode in the step (2) is gold or chromium and is used as a material of an adhesion layer.
A manufacturing method of a device facing to an atomic and near atomic scale functional structure is characterized in that a metal thin film deposited on a silicon wafer substrate in an atomic layer mode in the step (7) is gold or chromium, and the metal thin film not only plays a role in electric conduction, but also can be used as a material of an adhesion layer.
The manufacturing method of the functional structure device facing the atomic scale and the near atomic scale is characterized in that the line width and the height of the metal convex mold in the step (8) are accurately controlled by the thickness of the atomic layer deposition metal film.
The invention has the following remarkable advantages:
(1) The method fully combines the limit processing capability of electron beam lithography on a nano-scale fine structure and the advantages of atomic-scale thickness controllable deposition of an atomic layer deposition technology and atomic sequential electrodeposition of an electroforming technology, breaks through the limit of the existing semiconductor processing technology through the superposition of various micro-nano manufacturing technologies, and realizes the manufacturing of atomic and near-atomic scale functional structure devices.
(2) The technology and equipment of electron beam lithography, atomic deposition, electroforming and nanoimprint lithography which are mature at present are fully utilized without utilizing special atomic and near atomic scale manufacturing equipment.
(3) The manufacturing cost of the metal mold is low, and the polymer functional device can realize batch production by utilizing the nanoimprint technology.
Drawings
FIG. 1 is a flow chart of a method for manufacturing a device with an atomic and near-atomic scale functional structure.
FIG. 2 is a flow chart of another method for manufacturing a device with an atomic and near-atomic scale structure.
In the figure: 1, a silicon wafer substrate; 2, electronic glue; 3 a plurality of atomic thickness metal films; 4, a metal convex die; 5 a concave polymer device; 6, photoresist; 7 a monoatomic layer metal thin film; 8, a metal concave die; 9 convex polymer device.
Detailed Description
The following detailed description of the invention will be made with reference to the accompanying drawings.
The invention takes a manufacturing method of an atom and near atom scale oriented photoresist structure, a nickel mould and a polymethyl methacrylate functional device as specific embodiments.
Example 1, the method of manufacture comprises the following sequential steps:
(1) An electron beam lithography step;
firstly, cleaning a silicon wafer by using ultraviolet ozone, then coating AR-P6200 electronic glue with the thickness of 30nm on a silicon wafer substrate, pre-drying, then using electron beams to expose the electronic glue to obtain a nanoscale pattern structure, and after post-drying, developing and shaping, obtaining the pattern structure with the line width of less than 10nm on the silicon wafer as shown in figure 1 (a);
(2) An atomic layer deposition step;
isotropically depositing a chromium thin film with an atomic layer thickness layer by layer on the electronic glue pattern with the line width smaller than 10nm by utilizing an atomic layer deposition technology (as shown in fig. 1 (b)), so that the line width of the nano pattern structure manufactured by electron beam lithography is closed to a few nanometers or even atomic and near atomic dimensions;
(3) Electroforming;
activating the pattern structure after the atomic layer deposition by using sulfamic acid, performing nickel electroforming, and using the material less than 0.01A/dm in the filling stage of nanostructure electrodeposition 2 The electron glue pattern is accurately copied to a nickel mould by electro-deposition, and after the nano structure is filled, 1A/dm is used 2 The current density electrodeposition thickens the nickel mould base to hundreds of microns;
(4) A metal mold demoulding step;
corroding the combination of the metal nickel mold and the silicon substrate (as shown in figure 1 (c)) by using 60% potassium hydroxide/sodium hydroxide at 90 ℃, and completely chemically corroding and releasing the silicon wafer to obtain a metal nickel convex mold which is covered by the chromium film with the atomic layer deposition remained;
(5) Corroding the metal film;
etching off a chromium film (shown in fig. 1 (d)) remaining on a nickel mold by using potassium hydroxide/sodium hydroxide with a concentration of 80% to obtain a pure nickel convex mold (shown in fig. 1 (e)), wherein the metal nickel convex mold has a line width of atomic and near atomic scale and a height of several nanometers to dozens of nanometers, and is specifically controlled by an atomic layer deposition process;
(6) Nano-imprinting;
in order to prevent the deformation distortion of the fine structure in the demolding process, a BGL-GZ-83 molecular film is coated on the surface of the metal nickel convex mold in advance by evaporation to promote the mold and polymer to be demolded without damage, and after 8 hours, the pattern structure of the metal nickel convex mold is transferred to the polymethyl methacrylate polymer material by using a nano-imprinting technology by taking the metal nickel convex mold as a template (as shown in FIG. 1 (f));
(7) Demolding the polymer functional device;
the concave polymethyl methacrylate polymer object obtained by nanoimprint lithography is cleaned to obtain a functional device with special application.
Example 2, the method of manufacture comprises the following sequential steps:
(1) Photoetching;
firstly, cleaning a silicon wafer by using ultraviolet ozone, then coating diluted SU-8 photoresist with the thickness of 50nm on a silicon wafer substrate, carrying out pre-baking, then carrying out ultraviolet exposure treatment on the photoresist to obtain a pattern structure with the nanoscale, and carrying out post-baking, developing and shaping to obtain the pattern structure with the line width in the micro/nano range on the silicon wafer as shown in figure 2 (a);
(2) An atomic layer deposition step;
isotropically depositing a gold thin film having an atomic layer thickness on the photoresist pattern using an atomic layer deposition technique (as shown in fig. 2 (b));
(3) A selective etching step;
selectively removing the gold thin film material deposited on the horizontal surface of the photoresist pattern by using argon plasma sputtering reverse etching, and reserving the gold thin film on the inner side wall of the photoresist pattern (as shown in FIG. 2 (c));
(4) Removing the glue;
cleaning and removing the photoresist on the silicon wafer by using a glue remover and oxygen plasma, and taking the residual side wall gold film as a mask of the next etching process (as shown in figure 2 (d));
(5) A silicon etching step;
taking the gold film reserved on the side wall as a mask, etching the silicon substrate by a dry method, and obtaining a pattern structure with the line width in a micrometer/nanometer range and the depth in a nanometer range on the silicon substrate (as shown in figure 2 (e));
(6) Etching the side wall;
removing the gold film side wall by using aqua regia to obtain an etched silicon wafer pattern structure with atomic and near-atomic scale line width and nano-scale height (as shown in figure 2 (f));
(7) An atomic layer deposition step;
isotropically depositing a metal chromium film on the etched silicon wafer pattern by using an atomic layer deposition technology to serve as an electroformed base bonding layer and a conductive layer (as shown in FIG. 2 (g));
(8) Electroforming;
activating the pattern structure after the atomic layer deposition by using sulfamic acid, performing nickel electroforming, and using the material less than 0.01A/dm in the filling stage of micro/nano structure electrodeposition 2 The photo-resist pattern is accurately replicated by electrodeposition onto a nickel mold using 1A/dm after the micro/nano structures are filled 2 The current density electrodeposition thickens the nickel mould base to hundreds of microns;
(9) A metal demolding step;
corroding the combination of the metal nickel mold and the silicon substrate (as shown in figure 2 (h)) by using 60% potassium hydroxide/sodium hydroxide at 90 ℃, and completely chemically corroding and releasing the silicon wafer to obtain a metal nickel concave mold which is covered by the chromium film with the atomic layer deposition remained;
(10) Corroding the metal film;
etching off a chromium film (shown in figure 2 (i)) remained on a nickel mold by using potassium hydroxide/sodium hydroxide with the concentration of 80% to obtain a pure nickel concave mold (shown in figure 2 (j)), wherein the metal nickel concave mold has the line width of atoms and the approximate atomic scale and the height of several nanometers to dozens of nanometers, and is specifically controlled by an atomic layer deposition process;
(11) Nano-imprinting;
in order to prevent the deformation distortion of the fine structure in the demolding process, a BGL-GZ-83 molecular film is coated on the surface of a concave metal nickel mold in advance by evaporation to promote the mold and polymer to be demolded without damage, and after 8 hours, the concave metal nickel mold is used as a template to transfer the pattern structure of the concave metal nickel mold to a polymethyl methacrylate polymer material by a nanoimprint technology (as shown in FIG. 2 (k));
(12) A demolding step of the polymer functional device;
the convex poly (methyl methacrylate) polymer article obtained by nanoimprinting is washed to obtain a functional device with special application (see fig. 2 (l)).
Although the present invention has been described with reference to the accompanying drawings, it is not intended to limit the scope of the present invention, and all equivalent processes utilizing the contents of the present invention and the accompanying drawings, or applied directly or indirectly to other technical fields, are included in the scope of the present invention.
Claims (8)
1. A manufacturing method of an atomic and near atomic scale oriented functional structure device is characterized by sequentially comprising the following steps:
(1) An electron beam lithography step;
firstly, coating electronic glue on a silicon wafer substrate, preparing a nano-scale pattern structure by utilizing electron beam exposure to process photoresist after pre-baking, and obtaining the electronic glue pattern structure on the silicon wafer after post-baking, developing and shaping;
(2) An atomic layer deposition step;
isotropically depositing a metal film with the thickness of the atomic layer by layer on the electronic glue pattern by utilizing an atomic layer deposition technology, so that the line width of the nano pattern structure manufactured by electron beam lithography is closed;
(3) Electroforming;
electroforming the pattern structure after the atomic layer deposition, and accurately copying the electronic glue pattern electrodeposition onto a metal mold to obtain a metal convex mold;
(4) Demolding the metal mold;
corroding the combination of the metal mold and the silicon substrate by using potassium hydroxide/sodium hydroxide, and completely chemically corroding the silicon wafer and releasing to obtain a metal convex mold covered by the metal film with the atomic layer deposition remained;
(5) Corroding the metal film;
according to the difference of the chemical characteristics of the metal film deposited by the atomic layer and the metal mold material, selecting a corrosive to corrode the residual metal film so as to obtain a pure metal convex mold;
(6) Nano-imprinting;
carrying out molecular coating assistance on the metal convex mould in advance, demoulding the metal convex mould and the polymer, and then transferring the pattern structure of the metal convex mould to the polymer material by using the pure metal convex mould as a template and utilizing nanoimprint;
(7) A demolding step of the polymer functional device;
and cleaning the polymer object obtained by stamping to obtain the concave polymer functional device with special application.
2. A method of low cost fabrication of atomic and near atomic scale oriented functional structure devices according to claim 1, comprising the following steps in sequence:
(1) Photoetching;
firstly, coating photoresist on a silicon wafer substrate, preparing a micron/nanometer scale pattern structure by utilizing ultraviolet light/electron beam exposure to process the photoresist after prebaking, and obtaining the micron/nanometer scale photoresist pattern structure with the line width on the silicon wafer after postbaking, developing and shaping;
(2) An atomic layer deposition step;
isotropically depositing a metal thin film having an atomic layer thickness on the photoresist pattern using an atomic layer deposition technique;
(3) A selective etching step;
selectively removing the metal film material deposited on the horizontal plane of the photoresist pattern by utilizing sputtering reverse etching, and reserving the metal film on the inner side wall of the photoresist pattern;
(4) Removing the glue;
removing the photoresist pattern by using a glue remover;
(5) A silicon etching step;
taking the metal film reserved on the side wall as a mask, etching the silicon substrate by a dry method, and obtaining a pattern structure with the line width in a micrometer/nanometer range and the depth in a nanometer range on the silicon substrate;
(6) Etching the side wall;
corroding the side wall thin film by using corrosive liquid corresponding to the side wall metal thin film to obtain an etched silicon wafer pattern with atomic and near-atomic scale line width and nanoscale height;
(7) An atomic layer deposition step;
isotropically depositing a metal film on the etched silicon wafer pattern by utilizing an atomic layer deposition technology;
(8) Electroforming;
electroforming the pattern structure after the atomic layer deposition to obtain a metal concave die with the thickness of hundreds of microns, wherein the metal concave die has a line width in the range of atomic and near atomic scale and a height in the range of nanometer scale;
(9) A metal demolding step;
corroding the combination of the metal mold and the silicon substrate by using potassium hydroxide/sodium hydroxide, and completely chemically corroding the silicon wafer and releasing to obtain a metal concave mold covered by the metal film with the atomic layer deposition remained;
(10) Corroding the metal film;
according to the difference of the chemical characteristics of the metal film deposited by the atomic layer and the metal mold material, selecting a proper corrosive to corrode the residual metal film so as to obtain a pure metal concave mold;
(11) Nano-imprinting;
carrying out molecular coating assistance on the metal concave mould in advance, demoulding the metal concave mould and a polymer, and then transferring the pattern structure of the metal concave mould to a polymer material by using the pure metal concave mould as a template and utilizing nanoimprint;
(12) Demolding the polymer functional device;
and cleaning the polymer object obtained by stamping to obtain the convex polymer functional device with special application.
3. The method for manufacturing a device facing an atomic and near atomic scale functional structure according to claim 1, wherein the electronic glue in step (1) has the characteristics of ultra-high resolution and high etching resistance, and a structure smaller than 10nm is obtained.
4. The method for manufacturing a device oriented to an atomic and near-atomic scale functional structure according to claim 1, wherein the metal thin film atomic layer deposited on the silicon wafer substrate in the step (2) is a material which not only plays a role of electric conduction, but also plays a role of an adhesion layer.
5. The method for manufacturing an atomic-and near-atomic-scale-oriented functional structure device according to claim 1, wherein the line width and height of the metal convex mold in the step (3) are controlled by the thickness of the atomic layer deposition metal film.
6. The method for manufacturing a device oriented to an atomic and near-atomic scale functional structure according to claim 2, wherein the metal thin film deposited by the atomic layer deposition in the step (2) on the silicon wafer substrate is gold or chromium as a material of the adhesive layer.
7. The method for manufacturing an atomic-oriented and near-atomic scale functional structure device according to claim 2, wherein the metal thin film deposited by atomic layer deposition on the silicon wafer substrate in the step (7) is gold or chromium.
8. The method for manufacturing an atomic-oriented and near-atomic-scale functional structure device according to claim 2, wherein the line width and height of the metal male mold in the step (8) are controlled by the thickness of the ald metal film.
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