CN115173078B - Transmission type dual-frequency polarization insensitive conversion surface - Google Patents
Transmission type dual-frequency polarization insensitive conversion surfaceInfo
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- CN115173078B CN115173078B CN202210694244.9A CN202210694244A CN115173078B CN 115173078 B CN115173078 B CN 115173078B CN 202210694244 A CN202210694244 A CN 202210694244A CN 115173078 B CN115173078 B CN 115173078B
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- 230000010287 polarization Effects 0.000 title claims abstract description 90
- 238000006243 chemical reaction Methods 0.000 title abstract description 52
- 230000005540 biological transmission Effects 0.000 title abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 218
- 229910052751 metal Inorganic materials 0.000 claims abstract description 218
- 238000005388 cross polarization Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 230000005684 electric field Effects 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000022131 cell cycle Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Abstract
The application discloses a transmission type double-frequency polarization insensitive conversion surface, which relates to the technical field of radar anti-interference, and comprises the following components: the first resonant layer comprises a first metal patch unit, wherein the first metal patch unit at least comprises two first metal patches which are orthogonally arranged, and the first metal patch comprises a first area and a second area; the first dielectric layer is positioned on one side of the first resonant layer; the metal floor layer is positioned on one side of the first dielectric layer, which is away from the first resonance layer; the second dielectric layer is positioned on one side of the metal floor layer, which is away from the first resonance layer; the second resonant layer is positioned at one side of the second dielectric layer, which is away from the first resonant layer, and the first resonant layer and the second resonant layer are correspondingly arranged; the second resonance layer comprises a second metal patch unit, the second metal patch unit at least comprises two second metal patches which are orthogonally arranged, and the second metal patch comprises a third area and a fourth area; the first metal patch is electrically connected with the second metal patch. The application can realize dual-band polarization insensitive conversion.
Description
Technical Field
The invention belongs to the technical field of radar anti-interference, and particularly relates to a transmission type double-frequency polarization insensitive conversion surface.
Background
In the technical field of microwaves, polarization conversion surfaces are widely used as an important microwave device in equipment requiring changing the polarization state of incident electromagnetic waves; the polarization conversion surface can be used in the occasions with special requirements on the polarization direction of electromagnetic waves such as satellite communication, radar and navigation.
In the related art, polarization conversion surfaces can be classified into transmission type and reflection type according to the propagation direction of waves, and in a wireless communication system, polarization conversion can be performed on incident waves by loading the polarization conversion surfaces, reducing the complexity of the system. In the field of online polarization conversion, it is very common to achieve orthogonal deflection on transmitted electromagnetic waves, and metal gate-based structures are generally used in transmission type polarization conversion surfaces, so that only basic cross polarization conversion can be achieved; and most of the polarization conversion surfaces are designed according to a fixed electric field oscillation azimuth angle of the incident wave, so that the conversion efficiency of the polarization conversion surfaces is unstable under the unknown condition of the electric field oscillation azimuth angle of the incident wave. In addition, in the field of wireless communication, in a multi-frequency working system, polarization insensitivity conversion is required to be realized for electromagnetic waves with multiple frequencies simultaneously to realize communication, and the existing transmission type linear polarization conversion surface is limited to single-frequency working and is difficult to realize polarization angle insensitivity.
Therefore, it is necessary to solve the problem of realizing polarization conversion of the dual-frequency point without being affected by the polarization angle.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a transmission type dual-frequency polarization insensitive conversion surface. The technical problems to be solved by the invention are realized by the following technical scheme:
in a first aspect, the present application provides a transmissive dual frequency polarization insensitive switching surface comprising:
The first resonant layer comprises a plurality of first metal patch units which are arranged in an array, wherein each first metal patch unit at least comprises two first metal patches which are arranged in an orthogonal mode, each first metal patch comprises a first area and a second area, and the resonant frequency of each first area is different from the resonant frequency of each second area;
the first dielectric layer is positioned on one side of the first resonant layer;
The metal floor layer is positioned on one side of the first dielectric layer, which is away from the first resonance layer;
the second dielectric layer is positioned on one side of the metal floor layer, which is away from the first resonance layer;
The second resonant layer is positioned at one side of the second dielectric layer, which is away from the first resonant layer, and the first resonant layer and the second resonant layer are correspondingly arranged; the second resonant layer comprises a plurality of second metal patch units which are arranged in an array, the second metal patch units at least comprise two second metal patches which are arranged in an orthogonal mode, the second metal patches comprise a third area and a fourth area, and the resonant frequency of the third area is different from the resonant frequency of the fourth area; the first metal patch is electrically connected with the second metal patch.
Optionally, the first metal patch unit includes 4 first metal patches, and the first metal patches are rectangular;
The first metal patches are annularly and orthogonally arranged along a first direction, and the first direction is clockwise or anticlockwise.
Optionally, the first metal patch includes a first U-shaped groove, the first metal patch located in the first U-shaped groove is a first area, the first metal patch located outside the first U-shaped groove is a second area, and a resonance frequency of the first area is greater than a resonance frequency of the second area.
Optionally, the second metal patch unit includes 4 second metal patches, and the second metal patches are rectangular;
The second metal patches are annularly and orthogonally arranged along a second direction, and the second direction is a counterclockwise direction or a clockwise direction.
Optionally, the second metal patch includes a second U-shaped groove, the second metal patch located in the second U-shaped groove is a third area, the second metal patch located outside the second U-shaped groove is a fourth area, and a resonance frequency of the third area is greater than a resonance frequency of the fourth area.
Optionally, each first metal patch is electrically connected to a second metal patch orthogonal to the first metal patch, and the first metal patch and the second metal patch are electrically connected through a via.
Optionally, the metal floor layer comprises a plurality of through holes; the through holes penetrate through the metal floor layer along the direction perpendicular to the first resonance layer, and the through holes are used for passing through Kong Birang spaces.
Optionally, the size of the first region is the same as the size of the third region, and the size of the second region is the same as the size of the fourth region.
Optionally, the first region has a dimension in the third direction of，; The first region has a dimension in the fourth direction of，; The third direction intersects the fourth direction, and lambda 1 is a vacuum wavelength corresponding to the resonance frequency of the first region in the first metal patch.
Optionally, the second region has a dimension in the third direction of，; The second region has a dimension along the fourth direction of，; The third direction intersects the fourth direction,Is the vacuum wavelength corresponding to the resonance frequency of the second region in the first metal patch.
The invention has the beneficial effects that:
the invention provides a transmission type dual-frequency polarization insensitive conversion surface, wherein a first resonant layer comprises a plurality of first metal patch units which are arranged in an array, the first metal patch units at least comprise two first metal patches which are arranged in an orthogonal manner, the first metal patches comprise a first area and a second area, and the resonant frequency of the first area is different from the resonant frequency of the second area; the second resonant layer comprises a plurality of second metal patch units which are arranged in an array, the second metal patch units at least comprise two second metal patches which are arranged in an orthogonal mode, the second metal patches comprise a third area and a fourth area, and the resonant frequency of the third area is different from the resonant frequency of the fourth area; therefore, the dual-band polarization conversion is realized, the high-efficiency polarization conversion is realized, the insertion loss is small, the section is low, and the dual-band polarization conversion is easy to integrate with other microwave devices.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
FIG. 1 is a schematic diagram of a transmissive dual-band polarization insensitive switching surface according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a first metal patch unit according to an embodiment of the present invention;
Fig. 3 is a schematic structural diagram of a second metal patch unit according to an embodiment of the present invention;
FIG. 4 is a schematic view of a metal floor layer according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a first dielectric layer according to an embodiment of the present invention;
FIG. 6 is a graph of cross-polarization transmission amplitude coefficients for polarization conversion surfaces at different polarizations provided by embodiments of the present invention;
FIG. 7 is a graph of co-polarized reflection amplitude coefficients for polarization conversion surfaces at different polarizations provided by embodiments of the present invention;
FIG. 8 is a graph of cross polarization transmission coefficients corresponding to an increase in polarization angle from 0 degrees to 45 degrees for a polarization conversion surface provided by an embodiment of the present invention under x-polarization;
fig. 9 is a graph of co-polarized reflectance curves for an increase in polarization angle from 0 degrees to 45 degrees for a polarization conversion surface provided by an embodiment of the present invention under x-polarization.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but embodiments of the present invention are not limited thereto.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a transmission-type dual-frequency polarization insensitive switching surface according to an embodiment of the present application, where the transmission-type dual-frequency polarization insensitive switching surface includes:
The first resonant layer 10 comprises a plurality of first metal patch units 11 arranged in an array, wherein the first metal patch units 11 at least comprise two first metal patches 12 arranged orthogonally, the first metal patches 12 comprise a first area 13-1 and a second area 13-2, and the resonant frequency of the first area 13-1 is different from the resonant frequency of the second area 13-2;
A first dielectric layer 20 located at one side of the first resonance layer 10;
a metal floor layer 30 on a side of the first dielectric layer 20 facing away from the first resonant layer 10;
a second dielectric layer 40 on a side of the metal floor layer 30 facing away from the first resonant layer 10;
The second resonant layer 50 is located at one side of the second dielectric layer 40 away from the first resonant layer 10, and the first resonant layer 10 and the second resonant layer 50 are correspondingly arranged; the second resonant layer 50 includes a plurality of second metal patch units 51 arranged in an array, the second metal patch units 51 include at least two second metal patches 52 arranged orthogonally, the second metal patches 52 include a third region 53-1 and a fourth region 53-2, and the resonant frequency of the third region 53-1 is different from the resonant frequency of the fourth region 53-2; the first metal patch 12 is electrically connected to the second metal patch 52.
Specifically, as shown in fig. 1, the transmissive dual-frequency polarization insensitive switching surface provided in the present embodiment is sequentially laminated with a first resonant layer 10, a first dielectric layer 20, a metal floor layer 30, a second dielectric layer 40 and a second resonant layer 50; the first resonant layer 10 is configured to receive an incident electromagnetic wave, the first resonant layer 10 is electrically connected to the second resonant layer 50, and is capable of transmitting the electromagnetic wave to the second resonant layer 50, the second resonant layer 50 is configured to radiate the electromagnetic wave, and the metal floor layer 30 is configured to be a public floor of the first resonant layer 10 and the second resonant layer 50; thus, the planar circuit level structure reduces the cross section of the unit structure and is easy to integrate with a microwave device.
In the related art, the existing linear polarization conversion surface is stacked by adopting a multi-layer grid structure, so that the problems of larger electric size, complex structural design, high cost and high profile exist, and the linear polarization conversion surface is not easy to integrate with other microwave devices; the existing linear polarization conversion surface uses more metal grid type structures and generally works in a fixed frequency section; in addition, the existing polarization conversion surfaces are designed according to the fixed electric field oscillation azimuth angle of the incident wave, so that the conversion efficiency of the polarization conversion surfaces is unstable under the condition that the electric field oscillation azimuth angle of the incident wave is unknown; the existing polarization conversion surface works at a single frequency point and is difficult to realize polarization angle insensitive polarization conversion, and is not suitable for a multi-frequency wireless communication system.
In view of this, the transmissive dual-frequency polarization insensitive switching surface provided in the present embodiment, the first resonant layer 10 includes a plurality of first metal patch units 11 arranged in an array, the first metal patch units 11 include at least two first metal patches 12 arranged orthogonally, the first metal patch 12 includes a first region 13-1 and a second region 13-2, wherein the resonant frequency of the first region 13-1 is different from the resonant frequency of the second region 13-2; the second resonant layer 50 includes a plurality of second metal patch units 51 arranged in an array, the second metal patch units 51 include at least two second metal patches 52 arranged orthogonally, the second metal patches 52 include a third region 53-1 and a fourth region 53-2, wherein a resonant frequency of the third region 53-1 is different from a resonant frequency of the fourth region 53-2; therefore, the dual-band polarization conversion is realized, the high-efficiency polarization conversion is realized, the insertion loss is small, the section is low, and the dual-band polarization conversion is easy to integrate with other microwave devices.
It should be noted that, in the embodiment shown in fig. 1, only the first resonant layer 10, the first dielectric layer 20, the metal substrate layer 30, the second dielectric layer 40, and the second resonant layer 50 are schematically shown, and the specific dimensions thereof are not represented.
Referring to fig. 2, fig. 2 is a schematic structural diagram of a first metal patch unit 11 according to an embodiment of the present application, and in an alternative embodiment of the present application, the first metal patch unit 11 includes 4 first metal patches 12, and the first metal patches 12 are rectangular;
The first metal patches 12 are annularly and orthogonally arranged along a first direction, which is clockwise or counterclockwise.
It should be noted that, in the embodiment shown in fig. 2, only the arrangement of 4 first metal patches 12 is schematically shown, where the shapes and sizes of the first metal patches 12 are the same.
Specifically, as shown in fig. 2, the first metal patch unit 11 in this embodiment includes 4 first metal patches 12, and the first metal patches 12 are rectangular in shape along a direction perpendicular to the first resonant layer D1, and the first metal patches 12 are annularly and orthogonally arranged along the first direction; it will be appreciated that each first metal patch 12 is arranged clockwise in turn, and two adjacent first metal patches 12 are orthogonal; or each first metal patch 12 is arranged anticlockwise and sequentially, and two adjacent first metal patches 12 are orthogonal; in this way, the component in the x-polarization direction and the component in the y-polarization direction of the incident linearly polarized electromagnetic wave can be received.
With continued reference to fig. 2, in an alternative embodiment of the present application, the first metal patch 12 includes a first U-shaped groove 14, the first metal patch 12 located in the first U-shaped groove 14 is a first region 13-1, the first metal patch 12 located outside the first U-shaped groove 14 is a second region 13-2, and the resonant frequency of the first region 13-1 is greater than the resonant frequency of the second region 13-2.
It should be noted that, in the embodiment shown in fig. 2, the shape of the first U-shaped groove 14 is only schematically shown, and does not represent the actual size of the first U-shaped groove 14.
Specifically, as shown in fig. 2, in the present embodiment, the first metal patch 12 includes a first U-shaped slot 14, and the first U-shaped slot 14 divides the first metal patch 12 into two parts along a direction perpendicular to the first resonant layer D1, i.e. the first metal patch 12 located in the first U-shaped slot 14 is a first region 13-1, the first metal patch 12 located outside the first U-shaped slot 14 is a second region 13-2, the first region 13-1 is communicated with the second region 13-2, and the resonant frequency of the first region 13-1 is greater than that of the second region 13-2; thus, by grooving the single-resonant patch and adding the resonant branches to realize the dual-frequency point operation characteristic, the peripheral portion of the dual-frequency operated first metal patch 12 realizes the low-frequency resonance, and the middle portion of the dual-frequency operated first metal patch 12 realizes the high-frequency resonance.
Referring to fig. 3, fig. 3 is a schematic structural diagram of a second metal patch unit 51 according to an embodiment of the present application, and in an alternative embodiment of the present application, the second metal patch unit 51 includes 4 second metal patches 52, and the second metal patches 52 are rectangular;
The second metal patches 52 are annularly and orthogonally arranged along a second direction, which is counterclockwise or clockwise.
Specifically, as shown in fig. 3, the second metal patch unit 51 in this embodiment includes 4 second metal patches 52, and the second metal patches 52 are rectangular in shape along a direction perpendicular to the first resonant layer D1, and the second metal patches 52 are annularly and orthogonally arranged along the second direction; it will be appreciated that each second metal patch 52 is arranged in a counter-clockwise order, with two adjacent second metal patches 52 being orthogonal; or each second metal patch 52 is arranged clockwise in turn, and two adjacent second metal patches 52 are orthogonal; it should be noted that, the direction of the annular orthogonal arrangement of the first metal patches 12 is opposite to the direction of the annular orthogonal arrangement of the second metal patches 52, that is, the first metal patches 12 are arranged in a clockwise annular orthogonal arrangement, and the second metal patches 52 are arranged in a counterclockwise annular orthogonal arrangement; the first metallic patches 12 are annularly and orthogonally arranged counterclockwise and the second metallic patches 52 are annularly and orthogonally arranged clockwise.
With continued reference to fig. 2, in an alternative embodiment of the present application, the second metal patch 52 includes a second U-shaped groove 54, the second metal patch 52 located in the second U-shaped groove 54 is a third region 53-1, the second metal patch 52 located outside the second U-shaped groove 54 is a fourth region 53-2, and the resonant frequency of the third region 53-1 is greater than the resonant frequency of the fourth region 53-2.
It should be noted that, in the embodiment shown in fig. 3, the shape of the second U-shaped groove 54 is only schematically shown, and does not represent the actual size of the second U-shaped groove 54.
Specifically, as shown in fig. 3, in the present embodiment, the second metal patch 52 includes a second U-shaped groove 54, and the second U-shaped groove 54 divides the second metal patch 52 into two parts along a direction perpendicular to the first resonant layer D1, that is, the second metal patch 52 located in the second U-shaped groove 54 is a third region 53-1, the second metal patch 52 located outside the second U-shaped groove 54 is a fourth region 53-2, the third region 53-1 is communicated with the fourth region 53-2, and the resonant frequency of the third region 53-1 is greater than that of the fourth region 53-2; thus, by grooving the single-resonant patch and adding a resonant branch to achieve the dual-frequency point operation characteristic, the outer peripheral portion of the dual-frequency operating second metal patch 52 achieves low-frequency resonance, and the middle portion of the dual-frequency operating second metal patch 52 achieves high-frequency resonance.
In an alternative embodiment of the present application, each first metal patch 12 is electrically connected to a second metal patch 52 orthogonal thereto, and the first metal patch 12 is electrically connected to the second metal patch 52 orthogonal thereto through a via 60; in this way, the components of the polarization in the x direction and the polarization in the y direction can be respectively converted into orthogonal polarization, and the polarization of the linearly polarized electromagnetic wave polarized at any angle in the dual-band can be rotated by 90 degrees.
It should be noted that the embodiments shown in fig. 2 and 3 only schematically illustrate the position of the via 60, and do not represent the actual size of the via 60.
Specifically, as shown in fig. 2 and 3, in the present embodiment, each first metal patch 12 is electrically connected to one second metal patch 52 correspondingly, and the first metal patch 12 and the orthogonal second metal patch 52 are electrically connected through a via hole 60, wherein a metal material is injected into the via hole 60 to realize electrical connection; the via hole 60 passes through the first dielectric layer 20, the metal floor layer 30 and the second dielectric layer 40, and the via hole 60 electrically connects the first metal patch 12 with the second metal patch 52 orthogonal to the first metal patch, so that energy coupling between the metal patches of the upper-layer and lower-layer dual-frequency operation can be weakened, and loss is reduced.
With continued reference to fig. 2 and 3, in an alternative embodiment of the present application, the diameter of the via 60 is，。
Referring to fig. 4, fig. 4 is a schematic structural diagram of a metal floor layer 30 according to an embodiment of the present application, and in an alternative embodiment of the present application, the metal floor layer 30 includes a plurality of through holes 70; the through holes 70 penetrate through the metal floor layer 30 in a direction perpendicular to the first resonance layer D1, and the through holes 70 serve to avoid space for the via holes 60.
It should be noted that the embodiment shown in fig. 4 only schematically illustrates the position of the through hole 70, and does not represent the actual size of the through hole 70.
Specifically, as shown in fig. 4, the metal bottom plate layer in this embodiment includes a plurality of through holes 70, along a direction perpendicular to the first resonant layer D1, the through holes 70 penetrate through the metal bottom plate layer 30, and the through holes 70 are used to penetrate through the via holes 60, that is, to form the set avoiding spaces of the via holes 60; the diameter of the through hole 70 is larger than that of the via hole 60, and the function of the via hole 60 can be ensured.
With continued reference to fig. 2 and 3, in an alternative embodiment of the present application, the first region 13-1 is the same size as the third region 53-1, and the second region 13-2 is the same size as the fourth region 53-2.
It should be noted that, in the embodiments shown in fig. 2 and 3, the shapes of the first metal patch 12 and the second metal patch 52 are only schematically shown, which do not represent the actual dimensions.
Specifically, as shown in fig. 2 and 3, the size of the first region 13-1 is the same as the size of the third region 53-1, and the size of the second region 13-2 is the same as the size of the fourth region 53-2; in a direction perpendicular to the first resonant layer D1, the via 60 is disposed in the corresponding second region 13-2 and fourth region 53-2, and as shown in fig. 2 and 3, the via 60 is located at a right angle of the first metal patch unit 11.
With continued reference to fig. 1, in an alternative embodiment of the present application, the first metal patch units 11 are disposed corresponding to the second metal patch units 51, i.e. the number of the first metal patch units 11 is equal to the number of the second metal patch units 51, i.e. each includes，，The materials of the metal structures of the first resonance layer 10 and the second resonance layer 50 are copper; the first resonant layer 10 and the first dielectric layer 20 are electrically connected to each other, and the dielectric constant of the first dielectric layer 202.65, Loss tangentThe thickness is 2mm; the first dielectric layer 20 is electrically connected to the metal floor layer 30, the metal floor layer 30 is electrically connected to the second dielectric layer 40, and the dielectric constant of the second dielectric layer 402.65, Loss tangentThe thickness was 2mm.
With continued reference to FIG. 2, in an alternative embodiment of the application, the cell cycle。
With continued reference to FIG. 2, in an alternative embodiment of the present application, the first region 13-1 of the first metal patch 12 has a dimension in the third direction D3 of，; The first region 13-1 of the first metal patch 12 has a dimension in the fourth direction D4 of，; The opening of the first U-shaped groove 14 has a dimension along the fourth direction D4 of，The opening of the first U-shaped groove 14 has a dimension along the fourth direction D4 of，The first U-shaped groove 14 has a dimension along the fourth direction D4 of，The first U-shaped groove 14 has a dimension along the third direction D3，; The second region 13-2 has a dimension along the third direction D3 of，; The second region 13-2 has a dimension in the fourth direction D4 of，; The third direction D3 intersects the fourth direction D4, optionally the third direction D3 is perpendicular to the fourth direction D4; lambda 1 is the vacuum wavelength corresponding to the resonance frequency f 1 of the first region in the first metal patch, lambda 2 is the vacuum wavelength corresponding to the resonance frequency f 2 of the second region in the first metal patch.
With continued reference to FIG. 2, in an alternative embodiment of the present application, the gap distance between adjacent first metal patches 12 is，。
Specifically, with continued reference to fig. 2, in the present embodiment, the first region 13-1 of the first metal patch 12 has a dimension along the third direction D3The dimension of the first region 13-1 in the fourth direction D4The opening of the first U-shaped groove 14 has a dimension along the fourth direction D4The dimension of the opening of the first U-shaped groove 14 along the fourth direction D4The dimension of the first U-shaped groove 14 along the fourth direction D4The first U-shaped groove 14 has a dimension along the third direction D3The dimension of the second region 13-2 in the third direction D3The second region 13-2 has a dimension along the fourth direction D4Gap distance between adjacent first metal patches 12。
It should be noted that, the size of the second metal patch 52 may refer to the size of the first metal patch 12, wherein the size of the third region 53-1 of the second metal patch 52 refers to the size of the first region 13-1 of the first metal patch 12, and the size of the fourth region 53-2 of the second metal patch 52 refers to the size of the second region 13-2 of the first metal patch 12, which is not described in detail herein.
Note that, the gap distance between the adjacent second metal patches 52 refers to the gap between the first metal patches 12, and the present application is not described in detail herein.
Note that, as shown in fig. 1, h1 is the thickness of the first dielectric layer 20, and h2 is the thickness of the second dielectric layer 40.
Referring to fig. 5, fig. 5 is a schematic structural diagram of a first dielectric layer 20 according to an embodiment of the present application, in an alternative embodiment of the present application, a via 60 penetrates through the first dielectric layer 20, and a diameter of the via 60 on the first dielectric layer 20 is，Alternatively, the first and second layers may be,。
It should be noted that, as shown in fig. 5, the diameter of the via 60 on the second dielectric layer 40 is equal to the diameter of the via 60 on the first dielectric layer 20, and the diameter of the via 60 on the second dielectric layer 40 refers to the size of the via 60 on the first dielectric layer 20.
With continued reference to fig. 4, in an alternative embodiment of the present application, the metal floor layer 30 includes a plurality of through holes 70, the diameter of the through holes 70 is larger than the diameter of the vias 60, and the number of through holes 70 is equal to the number of vias 60; alternatively, the diameter of the through hole 70 is，Alternatively, the first and second layers may be,。
In an alternative embodiment of the present application, please refer to fig. 6 and 7, fig. 6 is a graph of cross polarization transmission amplitude coefficients of the polarization conversion surface provided by the embodiment of the present application under different polarizations, and fig. 7 is a graph of co-polarized reflection amplitude coefficients of the polarization conversion surface provided by the embodiment of the present application under different polarizations. Simulation is carried out under a simulation condition 1, and the transmission type dual-frequency polarization insensitive polarization conversion surface provided by the embodiment of the application is respectively simulated under the normal incidence condition by x polarization and y polarization, so that cross polarization transmission coefficient and co-polarization reflection coefficient curves are obtained, as shown in fig. 6 and 7; FIG. 6 is a graph of cross polarization transmission coefficients of the dual-frequency polarization insensitive polarization transformer under the incidence of x-polarized and y-polarized waves, where t yx and t xy are the cross polarization transmission coefficients of the incident waves of x-polarized and y-polarized waves, respectively; FIG. 7 is a graph of co-polarized reflectance for an incident wave of x-polarization and y-polarization, where r xx and r yy are the co-polarized reflectance for an incident wave of x-polarization and y-polarization, respectively; as can be seen from fig. 6 and 7, the dual-frequency polarization insensitive polarization conversion surface provided in this embodiment can realize cross polarization conversion in dual frequency bands of 4.58-4.69GHz and 5.33-5.42GHz, and PCR in both pass bands is greater than 90%, and its center working frequency is 4.64GHz and 5.37GHz, respectively; the cross polarization transmission coefficients at 4.64GHz and 5.37GHz were-0.22 dB and-0.35 dB, respectively, at which time the PCR reached 95%.
In an alternative embodiment of the present application, please refer to fig. 8 and 9, fig. 8 is a graph of cross polarization transmission coefficients corresponding to an increase in polarization angle from 0 degrees to 45 degrees of the polarization conversion surface provided by the embodiment of the present application under x polarization, and fig. 9 is a graph of co-polarization reflection coefficients corresponding to an increase in polarization angle from 0 degrees to 45 degrees of the polarization conversion surface provided by the embodiment of the present application under x polarization. Simulation is carried out under the simulation condition 1, and the transmission type dual-frequency polarization insensitive polarization conversion surface provided by the embodiment of the application is simulated under the normal incidence condition by different polarization angles under the incidence of x-polarized waves, so that cross polarization transmission coefficient and co-polarization reflection coefficient curves are obtained, and as shown in fig. 8 and 9, the transmission type polarization conversion surface provided by the embodiment does not influence the cross polarization coefficient and the co-polarization coefficient at all when the polarization angle is changed from 0-45 °, which indicates that the structure has the characteristic of being insensitive to the polarization angle of the incident waves, namely, the incident waves with any polarization azimuth angle can be rotated by 90 ° after being transmitted in the two passband ranges.
The invention provides a transmission type dual-frequency polarization insensitive conversion surface, a first resonant layer 10 comprises a plurality of first metal patch units 11 which are arranged in an array, wherein each first metal patch unit 11 at least comprises two first metal patches 12 which are arranged in an orthogonal mode, each first metal patch 12 comprises a first area 13-1 and a second area 13-2, and the resonant frequency of the first area 13-1 is different from the resonant frequency of the second area 13-2; the second resonant layer 50 includes a plurality of second metal patch units 51 arranged in an array, the second metal patch units 51 include at least two second metal patches 52 arranged orthogonally, the second metal patches 52 include a third region 53-1 and a fourth region 53-2, wherein a resonant frequency of the third region 53-1 is different from a resonant frequency of the fourth region 53-2; therefore, the dual-band polarization conversion is realized, the high-efficiency polarization conversion is realized, the insertion loss is small, the section is low, and the dual-band polarization conversion is easy to integrate with other microwave devices.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments described. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the invention, and these should be considered to be within the scope of the invention.
Claims (6)
1. A transmissive dual-frequency polarization insensitive switching surface comprising:
The first resonant layer comprises a plurality of first metal patch units which are arranged in an array, wherein each first metal patch unit at least comprises two first metal patches which are arranged in an orthogonal mode, the first metal patches are arranged in an annular orthogonal mode along a first direction, and the first direction is clockwise or anticlockwise; the first metal patch comprises a first area and a second area, the first metal patch comprises a first U-shaped groove, the first metal patch positioned in the first U-shaped groove is the first area, the first metal patch positioned outside the first U-shaped groove is the second area, and the resonance frequency of the first area is larger than that of the second area;
the first dielectric layer is positioned on one side of the first resonant layer;
the metal floor layer is positioned on one side of the first dielectric layer, which is away from the first resonance layer;
The second dielectric layer is positioned on one side of the metal floor layer, which is away from the first resonance layer;
The second resonant layer is positioned at one side of the second dielectric layer, which is away from the first resonant layer, and the first resonant layer and the second resonant layer are correspondingly arranged; the second resonant layer comprises a plurality of second metal patch units which are arranged in an array, wherein each second metal patch unit at least comprises two second metal patches which are arranged in an orthogonal mode, the second metal patches are arranged in an annular orthogonal mode along a second direction, and the second direction is opposite to the first direction; the second metal patch comprises a third area and a fourth area, the second metal patch comprises a second U-shaped groove, the second metal patch positioned in the second U-shaped groove is the third area, the second metal patch positioned outside the second U-shaped groove is the fourth area, and the resonance frequency of the third area is larger than the resonance frequency of the fourth area; each first metal patch is correspondingly and electrically connected with one second metal patch orthogonal to the first metal patch, and the first metal patch is electrically connected with the second metal patch through a via hole; the size of the first area is the same as that of the third area, and the size of the second area is the same as that of the fourth area.
2. The transmissive dual-band polarization insensitive switching surface of claim 1 wherein the first metal patch unit includes 4 of the first metal patches, the first metal patches being rectangular.
3. The transmissive dual-band polarization insensitive switching surface of claim 1 wherein the second metal patch unit includes 4 of the second metal patches, the second metal patches being rectangular.
4. The transmissive dual-frequency polarization insensitive switching surface of claim 1 wherein the metal floor layer includes a plurality of through holes; and along the direction perpendicular to the first resonance layer, the through hole penetrates through the metal floor layer, and the through hole is used for making the through Kong Birang space.
5. The transmissive dual-band polarization insensitive switching surface of claim 1 wherein the first area has a dimension in the third direction of，; The first region has a dimension along the fourth direction of，; The third direction intersects the fourth direction, and lambda 1 is a vacuum wavelength corresponding to the resonance frequency of the first region in the first metal patch.
6. The transmissive dual-band polarization insensitive switching surface of claim 1 wherein the second area has a dimension in the third direction of，; The second region has a dimension along the fourth direction of，; And the third direction is intersected with the fourth direction, and lambda 2 is the vacuum wavelength corresponding to the resonance frequency of the second area in the first metal patch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210694244.9A CN115173078B (en) | 2022-06-15 | Transmission type dual-frequency polarization insensitive conversion surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210694244.9A CN115173078B (en) | 2022-06-15 | Transmission type dual-frequency polarization insensitive conversion surface |
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| Publication Number | Publication Date |
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| CN115173078A CN115173078A (en) | 2022-10-11 |
| CN115173078B true CN115173078B (en) | 2024-07-02 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5241321A (en) * | 1992-05-15 | 1993-08-31 | Space Systems/Loral, Inc. | Dual frequency circularly polarized microwave antenna |
| JP2005303528A (en) * | 2004-04-08 | 2005-10-27 | Hidekazu Ogawa | Radio wave polarization conversion resonance reflector, radio wave polarization conversion resonance reflecting apparatus, radio communication system, metal-adaptive radio ic tag, article and rfid system |
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5241321A (en) * | 1992-05-15 | 1993-08-31 | Space Systems/Loral, Inc. | Dual frequency circularly polarized microwave antenna |
| JP2005303528A (en) * | 2004-04-08 | 2005-10-27 | Hidekazu Ogawa | Radio wave polarization conversion resonance reflector, radio wave polarization conversion resonance reflecting apparatus, radio communication system, metal-adaptive radio ic tag, article and rfid system |
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