CN115173078A - Transmission type dual-frequency polarization insensitive pole-changing surface - Google Patents
Transmission type dual-frequency polarization insensitive pole-changing surface Download PDFInfo
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- 239000002184 metal Substances 0.000 claims abstract description 223
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 49
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- 238000005388 cross polarization Methods 0.000 description 12
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/24—Polarising devices; Polarisation filters
- H01Q15/242—Polarisation converters
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Abstract
The invention discloses a transmission type double-frequency polarization insensitive conversion surface, which relates to the technical field of radar anti-interference and comprises the following components: the first resonance layer comprises a first metal patch unit, the first metal patch unit at least comprises two first metal patches which are orthogonally arranged, and each first metal patch comprises a first area and a second area; the first dielectric layer is positioned on one side of the first resonance layer; the metal floor layer is positioned on one side of the first dielectric layer, which deviates from the first resonance layer; the second dielectric layer is positioned on one side of the metal floor layer, which is far away from the first resonance layer; the second resonance layer is positioned on one side of the second medium layer, which is far away from the first resonance layer, and the first resonance layer and the second resonance layer are correspondingly arranged; the second resonance layer comprises a second metal patch unit, the second metal patch unit at least comprises two second metal patches which are orthogonally arranged, and the second metal patches comprise a third area and a fourth area; the first metal patch is electrically connected with the second metal patch. The method and the device can realize dual-band polarization insensitive conversion.
Description
Technical Field
The invention belongs to the technical field of radar anti-interference, and particularly relates to a transmission type double-frequency polarization insensitive conversion surface.
Background
In the field of microwave technology, polarization conversion surfaces are widely used as an important microwave device in equipment requiring a change in the polarization state of incident electromagnetic waves; the polarization conversion surface can be used in the occasions with special requirements on the polarization direction of electromagnetic waves, such as satellite communication, radar, navigation and the like.
In the related art, the polarization conversion surface can be classified into a transmission type and a reflection type according to the propagation direction of the wave, and in a wireless communication system, polarization conversion can be realized on incident waves by loading the polarization conversion surface, so that the complexity of the system is reduced. In the field of linear polarization conversion, orthogonal deflection of transmitted electromagnetic waves is very common, and a transmission type polarization conversion surface is usually based on a metal bar grid structure and can only realize the conversion of basic cross polarization; most of the devices are designed according to a fixed incident wave electric field oscillation azimuth angle, so that the conversion efficiency of the polarization conversion surface is unstable under the condition that the incident wave electric field oscillation azimuth angle is unknown. In addition, in the field of wireless communication, in a multi-frequency operating system, it is necessary to implement polarization insensitive conversion on electromagnetic waves of multiple frequencies simultaneously to implement communication, and the existing transmission type linear polarization conversion surface is limited to single-frequency operation and is difficult to implement polarization angle insensitivity.
Therefore, it is necessary to solve the problem of realizing polarization conversion of a dual frequency point without being affected by a polarization angle.
Disclosure of Invention
In order to solve the above problems in the prior art, the present invention provides a transmissive dual-band polarization insensitive switching surface. The technical problem to be solved by the invention is realized by the following technical scheme:
in a first aspect, the present application provides a transmissive dual-frequency polarization insensitive switching surface comprising:
the first resonant layer comprises a plurality of first metal patch units which are arranged in an array manner, each first metal patch unit at least comprises two first metal patches which are arranged orthogonally, each first metal patch comprises a first area and a second area, and the resonant frequency of the first area is different from that of the second area;
the first dielectric layer is positioned on one side of the first resonance layer;
the metal floor layer is positioned on one side of the first dielectric layer, which deviates from the first resonance layer;
the second dielectric layer is positioned on one side of the metal floor layer, which is far away from the first resonance layer;
the second resonance layer is positioned on one side of the second medium layer, which is far away from the first resonance layer, and the first resonance layer and the second resonance layer are correspondingly arranged; the second resonance layer comprises a plurality of second metal patch units which are arranged in an array mode, each second metal patch unit at least comprises two second metal patches which are arranged orthogonally, each second metal patch comprises a third area and a fourth area, and the resonance frequency of the third area is different from the resonance frequency of the fourth area; the first metal patch is electrically connected with the second metal patch.
Optionally, the first metal patch unit includes 4 first metal patches, and each first metal patch is rectangular;
the first metal patches are arranged in an annular orthogonal mode along a first direction, and the first direction is clockwise or anticlockwise.
Optionally, the first metal patch includes a first U-shaped groove, the first metal patch located in the first U-shaped groove is a first area, the first metal patch located outside the first U-shaped groove is a second area, and a resonant frequency of the first area is greater than a resonant frequency of the second area.
Optionally, the second metal patch unit includes 4 second metal patches, and each second metal patch is rectangular;
the second metal patches are arranged in an annular orthogonal mode along a second direction, and the second direction is the anticlockwise direction or the clockwise direction.
Optionally, the second metal patch includes a second U-shaped groove, the second metal patch located in the second U-shaped groove is a third region, the second metal patch located outside the second U-shaped groove is a fourth region, and a resonant frequency of the third region is greater than a resonant frequency of the fourth region.
Optionally, each first metal patch is electrically connected to a second metal patch orthogonal to the first metal patch, and the first metal patch and the second metal patch are electrically connected through a via hole.
Optionally, the metal floor layer comprises a plurality of through holes; the through hole penetrates through the metal floor layer along the direction perpendicular to the first resonance layer, and the through hole is used for avoiding a space for the through hole.
Optionally, the size of the first region is the same as the size of the third region, and the size of the second region is the same as the size of the fourth region.
Optionally, the first region has a dimension w along the third direction 1 ，0.0143λ 1 <w 1 <0.0152λ 1 (ii) a The first region has a dimension l in the fourth direction 1 ，0.160λ 1 <l 1 <0.258λ 1 (ii) a The third direction intersects the fourth direction, λ 1 A vacuum wavelength corresponding to a resonant frequency of a first region in the first metal patch.
Optionally, the second region has a dimension w along the third direction 2 ，0.0432λ 2 <w 2 <0.0434λ 2 (ii) a The second region has a dimension l in the fourth direction 2 ，0.201λ 2 <l 2 <0.258λ 2 (ii) a The third direction intersects the fourth direction, λ 2 A vacuum wavelength corresponding to a resonant frequency of the second region in the first metal patch.
The invention has the beneficial effects that:
the invention provides a transmission type dual-frequency polarization insensitive conversion surface, wherein a first resonance layer comprises a plurality of first metal patch units which are arranged in an array mode, each first metal patch unit at least comprises two first metal patches which are arranged orthogonally, each first metal patch comprises a first area and a second area, and the resonance frequency of the first area is different from the resonance frequency of the second area; the second resonance layer comprises a plurality of second metal patch units which are arranged in an array mode, each second metal patch unit at least comprises two second metal patches which are arranged orthogonally, each second metal patch comprises a third area and a fourth area, and the resonance frequency of the third area is different from the resonance frequency of the fourth area; therefore, the dual-band polarization conversion is realized, high-efficiency polarization conversion is realized, the insertion loss is small, the section is low, and the microwave-based dual-band polarization conversion device is easy to integrate with other microwave devices.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
FIG. 1 is a schematic diagram of a structure of a transmissive dual-band polarization insensitive switching surface provided by an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a first metal patch unit according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a second metal patch unit according to an embodiment of the present invention;
FIG. 4 is a schematic view of a metal floor layer according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a first dielectric layer according to an embodiment of the present invention;
FIG. 6 is a graph of cross-polarization transmission amplitude coefficients for different polarizations for a polarization conversion surface provided by an embodiment of the present invention;
FIG. 7 is a graph of co-polarized reflection amplitude coefficients for different polarizations for a polarization conversion surface provided by an embodiment of the present invention;
FIG. 8 is a graph of cross-polarization transmission coefficients corresponding to polarization conversion surfaces with polarization angles increasing from 0 degrees to 45 degrees in x-polarization provided by embodiments of the present invention;
fig. 9 is a graph of a co-polarized reflectance plot for a polarization conversion surface with an x-polarization with an increasing polarization angle from 0 degrees to 45 degrees.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a transmission type dual-band polarization insensitive switching surface according to an embodiment of the present invention, and the transmission type dual-band polarization insensitive switching surface provided in the present application includes:
the first resonant layer 10 comprises a plurality of first metal patch units 11 arranged in an array, the first metal patch units 11 at least comprise two first metal patches 12 arranged orthogonally, each first metal patch 12 comprises a first area 13-1 and a second area 13-2, and the resonant frequency of the first area 13-1 is different from the resonant frequency of the second area 13-2;
a first dielectric layer 20 positioned at one side of the first resonance layer 10;
a metal floor layer 30 positioned on a side of the first dielectric layer 20 away from the first resonance layer 10;
the second dielectric layer 40 is positioned on one side of the metal floor layer 30, which is far away from the first resonance layer 10;
the second resonance layer 50 is positioned on one side of the second medium layer 40, which is far away from the first resonance layer 10, and the first resonance layer 10 and the second resonance layer 50 are correspondingly arranged; the second resonant layer 50 includes a plurality of second metal patch units 51 arranged in an array, the second metal patch units 51 include at least two second metal patches 52 arranged orthogonally, the second metal patches 52 include a third region 53-1 and a fourth region 53-2, and a resonant frequency of the third region 53-1 is different from a resonant frequency of the fourth region 53-2; first metal patch 12 is electrically connected to second metal patch 52.
Specifically, as shown in fig. 1, the transmissive dual-band polarization insensitive switching surface provided in this embodiment is sequentially stacked with a first resonant layer 10, a first dielectric layer 20, a metal floor layer 30, a second dielectric layer 40, and a second resonant layer 50; wherein the first resonance layer 10 is used for receiving incident electromagnetic waves, the first resonance layer 10 is electrically connected with the second resonance layer 50 and can transmit the electromagnetic waves to the second resonance layer 50, the second resonance layer 50 is used for radiating the electromagnetic waves, and the metal floor layer 30 is used for a common floor of the first resonance layer 10 and the second resonance layer 50; therefore, the section of the unit structure is reduced by adopting the planar circuit level structure, and the microwave device is easy to integrate.
In the related art, the existing linearly polarized conversion surface is mostly stacked by adopting a multi-layer grid structure, has the problems of large electric size, complex structural design, high cost and high section, and is not easy to integrate with other microwave devices; the existing linear polarization conversion surface uses more metal bar grid structures and generally works in a fixed frequency range; in addition, the existing polarization conversion surfaces are designed according to a fixed incident wave electric field oscillation azimuth angle, so that the conversion efficiency of the polarization conversion surfaces is unstable under the condition that the incident wave electric field oscillation azimuth angle is unknown; the existing polarization conversion surface works at a single frequency point, is difficult to realize polarization angle insensitive polarization conversion, and is not suitable for a multi-frequency wireless communication system.
In view of this, in the transmissive dual-band polarization insensitive switching surface provided in this embodiment, the first resonant layer 10 includes a plurality of first metal patch elements 11 arranged in an array, the first metal patch elements 11 include at least two first metal patches 12 arranged orthogonally, and the first metal patches 12 include a first region 13-1 and a second region 13-2, where a resonant frequency of the first region 13-1 is different from a resonant frequency of the second region 13-2; the second resonant layer 50 includes a plurality of second metal patch units 51 arranged in an array, the second metal patch units 51 include at least two second metal patches 52 arranged orthogonally, the second metal patches 52 include a third region 53-1 and a fourth region 53-2, wherein a resonant frequency of the third region 53-1 is different from a resonant frequency of the fourth region 53-2; therefore, the dual-band polarization conversion is realized, the high-efficiency polarization conversion is realized, the insertion loss is small, the section is low, and the microwave polarization conversion device is easy to integrate with other microwave devices.
It should be noted that, in the embodiment shown in fig. 1, only the schematic structural diagrams of the first resonance layer 10, the first dielectric layer 20, the metal floor layer 30, the second dielectric layer 40, and the second resonance layer 50 are shown schematically, and do not represent specific dimensions thereof.
Referring to fig. 2, fig. 2 is a schematic structural diagram of a first metal patch unit 11 according to an embodiment of the present disclosure, in an alternative embodiment of the present disclosure, the first metal patch unit 11 includes 4 first metal patches 12, and each first metal patch 12 is rectangular;
the first metal patches 12 are orthogonally arranged in a ring shape along a first direction, which is a clockwise direction or a counterclockwise direction.
It should be noted that, in the embodiment shown in fig. 2, only the arrangement of 4 first metal patches 12 is schematically shown, where the shapes and sizes of the first metal patches 12 are the same.
Specifically, please refer to fig. 2, in this embodiment, the first metal patch unit 11 includes 4 first metal patches 12, and along a direction perpendicular to the first resonant layer D1, the first metal patches 12 are rectangular, and the first metal patches 12 are orthogonally arranged in a ring shape along the first direction; it can be understood that, the first metal patches 12 are sequentially arranged clockwise, and two adjacent first metal patches 12 are orthogonal; or, the first metal patches 12 are sequentially arranged counterclockwise, and two adjacent first metal patches 12 are orthogonal; in this manner, the x-polarization direction component and the y-polarization direction component of the incident linearly polarized electromagnetic wave can be received.
With continued reference to fig. 2, in an alternative embodiment of the present application, the first metal patch 12 includes a first U-shaped groove 14, the first metal patch 12 located in the first U-shaped groove 14 is a first region 13-1, the first metal patch 12 located outside the first U-shaped groove 14 is a second region 13-2, and a resonant frequency of the first region 13-1 is greater than a resonant frequency of the second region 13-2.
It should be noted that the shape of the first U-shaped groove 14 is only schematically shown in the embodiment shown in fig. 2, and does not represent the actual size of the first U-shaped groove 14.
Specifically, please refer to fig. 2, in the present embodiment, the first metal patch 12 includes a first U-shaped groove 14, and the first U-shaped groove 14 divides the first metal patch 12 into two parts along a direction perpendicular to the first resonant layer D1, that is, the first metal patch 12 located in the first U-shaped groove 14 is a first area 13-1, the first metal patch 12 located outside the first U-shaped groove 14 is a second area 13-2, the first area 13-1 is communicated with the second area 13-2, and a resonant frequency of the first area 13-1 is greater than a resonant frequency of the second area 13-2; therefore, the single resonant patch is provided with the grooves and the resonant branches are added to realize the double-frequency point working characteristic, the peripheral part of the first metal patch 12 working at double frequency realizes low-frequency resonance, and the middle part of the first metal patch 12 working at double frequency realizes high-frequency resonance.
Referring to fig. 3, fig. 3 is a schematic structural diagram of a second metal patch unit 51 according to an embodiment of the present invention, in an alternative embodiment of the present application, the second metal patch unit 51 includes 4 second metal patches 52, and each of the second metal patches 52 is rectangular;
the second metal patches 52 are arranged in an annular orthogonal manner along a second direction, which is a counterclockwise direction or a clockwise direction.
Specifically, as shown in fig. 3, in the present embodiment, the second metal patch unit 51 includes 4 second metal patches 52, and the second metal patches 52 are rectangular along a direction perpendicular to the first resonant layer D1, and the second metal patches 52 are orthogonally arranged in a ring shape along the second direction; it can be understood that, each second metal patch 52 is arranged in turn counterclockwise, and two adjacent second metal patches 52 are orthogonal; or, the second metal patches 52 are sequentially arranged clockwise, and two adjacent second metal patches 52 are orthogonal; it should be noted that the direction of the circular orthogonal arrangement of the first metal patches 12 is opposite to the direction of the circular orthogonal arrangement of the second metal patches 52, that is, the first metal patches 12 are arranged clockwise and circularly orthogonal, and the second metal patches 52 are arranged counterclockwise and circularly orthogonal; the first metal patches 12 are orthogonally arranged in a counterclockwise annular shape, and the second metal patches 52 are orthogonally arranged in a clockwise annular shape.
With continued reference to fig. 2, in an alternative embodiment of the present application, the second metal patch 52 includes a second U-shaped groove 54, the second metal patch 52 located in the second U-shaped groove 54 is a third area 53-1, the second metal patch 52 located outside the second U-shaped groove 54 is a fourth area 53-2, and the resonant frequency of the third area 53-1 is greater than the resonant frequency of the fourth area 53-2.
It should be noted that the shape of the second U-shaped groove 54 is only schematically shown in the embodiment shown in fig. 3, and does not represent the actual size of the second U-shaped groove 54.
Specifically, as shown in fig. 3, in the present embodiment, the second metal patch 52 includes a second U-shaped groove 54, and along a direction perpendicular to the first resonant layer D1, the second U-shaped groove 54 divides the second metal patch 52 into two parts, that is, the second metal patch 52 located in the second U-shaped groove 54 is a third area 53-1, the second metal patch 52 located outside the second U-shaped groove 54 is a fourth area 53-2, the third area 53-1 is communicated with the fourth area 53-2, and a resonant frequency of the third area 53-1 is greater than a resonant frequency of the fourth area 53-2; therefore, the single resonant patch is provided with the grooves and the resonant branches are added to realize the double-frequency point working characteristic, the peripheral part of the second metal patch 52 working at double frequency realizes low-frequency resonance, and the middle part of the second metal patch 52 working at double frequency realizes high-frequency resonance.
In an alternative embodiment of the present application, each first metal patch 12 is electrically connected to one second metal patch 52 orthogonal thereto, and the first metal patch 12 is electrically connected to the second metal patch 52 orthogonal thereto through a via 60; therefore, the components polarized in the x direction and the y direction can be respectively converted into orthogonal polarization, and the polarization rotation of the linearly polarized electromagnetic wave polarized in any angle in the dual-frequency band is realized by 90 degrees.
It should be noted that the embodiment shown in fig. 2 and 3 only schematically shows a position schematic diagram of the via 60, and does not represent an actual size of the via 60.
Specifically, please refer to fig. 2 and fig. 3, in the present embodiment, each first metal patch 12 is electrically connected to one second metal patch 52, and the first metal patch 12 is electrically connected to the orthogonal second metal patch 52 through a via 60, wherein a metal material is injected into the via 60 to achieve electrical connection; the via hole 60 penetrates through the first dielectric layer 20, the metal floor layer 30 and the second dielectric layer 40, and the first metal patch 12 is electrically connected with the second metal patch 52 orthogonal to the first metal patch by the via hole 60, so that the energy coupling between the metal patches in the upper and lower dual-frequency working modes can be weakened, and the loss is reduced.
With continued reference to fig. 2 and 3, in an alternative embodiment of the present application, the via 60 has a diameter d 1 ，0.00716λ 1 <d 1 <0.00717λ 1 。
Referring to fig. 4, fig. 4 is a schematic structural diagram of a metal floor layer 30 according to an embodiment of the present invention, in an alternative embodiment of the present invention, the metal floor layer 30 includes a plurality of through holes 70; the through-hole 70 penetrates through the metal floor layer 30 in a direction perpendicular to the first resonance layer D1, and the through-hole 70 serves to make room for the via hole 60.
It should be noted that the embodiment shown in fig. 4 only schematically shows the position of the through hole 70, and does not represent the actual size of the through hole 70.
Specifically, please refer to fig. 4, in this embodiment, the metal floor layer includes a plurality of through holes 70, the through holes 70 penetrate through the metal floor layer 30 along a direction perpendicular to the first resonant layer D1, and the through holes 70 are used for penetrating through the through holes 60, that is, an avoidance space is provided for the through holes 60; the diameter of the through-hole 70 is larger than that of the via-hole 60, so that the function of the via-hole 60 can be ensured.
With continued reference to fig. 2 and 3, in an alternative embodiment of the present application, the first region 13-1 has the same dimensions as the third region 53-1, and the second region 13-2 has the same dimensions as the fourth region 53-2.
It should be noted that the shapes of the first metal patch 12 and the second metal patch 52 are only schematically shown in the embodiment shown in fig. 2 and 3, and do not represent actual sizes.
Specifically, with continued reference to fig. 2 and 3, in the present embodiment, the size of the first region 13-1 is the same as the size of the third region 53-1, and the size of the second region 13-2 is the same as the size of the fourth region 53-2; the via 60 is disposed in the corresponding second region 13-2 and fourth region 53-2 along a direction perpendicular to the first resonant layer D1, please continue to refer to fig. 2 and 3, and the via 60 is located at a right angle of the first metal patch element 11.
With continued reference to fig. 1, in an alternative embodiment of the present application, the first metal patch units 11 and the second metal patch units 51 are correspondingly disposed, that is, the number of the first metal patch units 11 is equal to the number of the second metal patch units 51, that is, each of the first metal patch units 11 and the second metal patch units 51 includes mxn, where m is greater than or equal to 2, n is greater than or equal to 2, and the metal structures of the first resonant layer 10 and the second resonant layer 50 are made of copper; the first resonance layer 10 and the first dielectric layer 20 are electrically connected to each other, and the first dielectric layer 20 has a dielectric constant ε r 2.65, loss tangent tan delta =0.002, thickness 2mm(ii) a The first dielectric layer 20 is electrically connected with the metal floor layer 30, the metal floor layer 30 is electrically connected with the second dielectric layer 40, and the dielectric constant epsilon of the second dielectric layer 40 r 2.65, loss tangent tan δ =0.002, thickness 2mm.
With continued reference to fig. 2, in an alternative embodiment of the present application, the cell period p =16.5mm.
With continued reference to fig. 2, in an alternative embodiment of the present application, the first region 13-1 of the first metal patch 12 has a dimension w along the third direction D3 1 ，0.0143λ 1 <w 1 <0.0152λ 1 (ii) a The first area 13-1 of the first metal patch 12 has a dimension l along the fourth direction D4 1 ，0.160λ 1 <l 1 <0.258λ 1 (ii) a The opening of the first U-shaped groove 14 has a dimension w along the fourth direction D4 3 ，0.0035λ 1 <w 3 <0.0036λ 1 The dimension of the opening of the first U-shaped groove 14 along the fourth direction D4 is l 3 ，0.0086λ 1 <l 3 <0.0091λ 1 The first U-shaped groove 14 has a dimension w along the fourth direction D4 4 ，0.0343λ 1 <w 4 <0.0359λ 1 The dimension l of the first U-shaped groove 14 along the third direction D3 4 ，0.1785λ 1 <l 4 <0.1792λ 1 (ii) a The second region 13-2 has a dimension w along the third direction D3 2 ， 0.0432λ 2 <w 2 <0.0434λ 2 (ii) a The second region 13-2 has a dimension l along the fourth direction D4 2 ， 0.201λ 2 <l 2 <0.258λ 2 (ii) a The third direction D3 intersects the fourth direction D4, and optionally, the third direction D3 is perpendicular to the fourth direction D4; lambda 1 Is the resonant frequency f of the first region in the first metal patch 1 Corresponding vacuum wavelength, λ 2 Is the resonant frequency f of the second region in the first metal patch 2 Corresponding vacuum wavelength.
With continued reference to FIG. 2, in an alternative embodiment of the present application, the gap distance between adjacent first metal patches 12 is g,0.00537 λ 1 <g<0.005375λ 1 。
Specifically, please refer to fig. 2, in this embodiment, a dimension w of the first region 13-1 of the first metal patch 12 along the third direction D3 1 =0.8mm, dimension l of first area 13-1 in fourth direction D4 1 =9mm, dimension w of opening of first U-shaped groove 14 in fourth direction D4 3 =0.2mm, dimension l of opening of first U-shaped groove 14 along fourth direction D4 3 =0.5mm, dimension w of first U-shaped groove 14 in fourth direction D4 4 =2mm, dimension l of first U-shaped groove 14 in third direction D3 4 =10mm, dimension w of second area 13-2 in third direction D3 2 =2.8mm, dimension l of second area 13-2 in fourth direction D4 2 =13.2mm, and the gap distance g =0.3mm between adjacent first metal patches 12.
It should be noted that, the size of the second metal patch 52 may refer to the size of the first metal patch 12, wherein the size of the third area 53-1 of the second metal patch 52 refers to the size of the first area 13-1 of the first metal patch 12, and the size of the fourth area 53-2 of the second metal patch 52 refers to the size of the second area 13-2 of the first metal patch 12, which is not described in detail herein.
It should be noted that the gap distance between adjacent second metal patches 52 refers to the gap between first metal patches 12, which is not described in detail herein.
Please refer to fig. 1, wherein h1 is the thickness of the first dielectric layer 20, and h2 is the thickness of the second dielectric layer 40.
Referring to fig. 5, fig. 5 is a schematic structural diagram of the first dielectric layer 20 according to an embodiment of the present invention, in an alternative embodiment of the present application, the via 60 penetrates through the first dielectric layer 20, and the diameter of the via 60 on the first dielectric layer 20 is d 1 ，0.00716λ 1 <d 1 <0.00717λ 1 Optionally, d 1 ＝0.4mm。
It should be noted that, with continued reference to fig. 5, the diameter of the via 60 on the second dielectric layer 40 is equal to the diameter of the via 60 on the first dielectric layer 20, and the diameter of the via 60 on the second dielectric layer 40 is referred to the size of the via 60 on the first dielectric layer 20.
With continued reference to fig. 4, in an alternative embodiment of the present application, the metal floor layer 30 includes a plurality of through holes 70, the diameter of the through holes 70 is greater than the diameter of the through holes 60, and the number of the through holes 70 is equal to the number of the through holes 60; optionally, the diameter of the through-hole 70 is d 2 ，0.025λ 1 <d 2 <0.026λ 1 Optionally, d 2 ＝1.4mm。
In an alternative embodiment of the present application, please refer to fig. 6 and fig. 7, in which fig. 6 is a graph of cross-polarization transmission amplitude coefficients of polarization conversion surfaces provided by an embodiment of the present invention under different polarizations, and fig. 7 is a graph of co-polarization reflection amplitude coefficients of polarization conversion surfaces provided by an embodiment of the present invention under different polarizations. Simulating under the simulation condition 1, and respectively simulating the transmission type dual-frequency polarization insensitive polarization conversion surface provided by the embodiment of the application by x polarization and y polarization under the vertical incidence condition to obtain cross polarization transmission coefficient and co polarization reflection coefficient curves, as shown in fig. 6 and 7; FIG. 6 is a cross-polarization transmission coefficient curve of the dual-band polarization insensitive polarization transformer at x-polarization and y-polarization wave incidence, where t yx And t xy Cross polarization transmission coefficients under x-polarization incident waves and y-polarization incident waves respectively; FIG. 7 is a plot of co-polarized reflectance at x-and y-polarized wave incidence, where r xx And r yy Co-polarization reflection coefficients under x-polarization incident waves and y-polarization incident waves respectively; as can be seen from FIG. 6 and FIG. 7, the dual-frequency polarization insensitive polarization conversion surface provided by the present embodiment can realize cross polarization conversion in the dual-frequency bands of 4.58-4.69GHz and 5.33-5.42GHz, and PCR in both pass bands is greater than 90%, and the center operating frequencies are 4.64GHz and 5.37GHz respectively; the cross-polarization transmission coefficients at 4.64GHz and 5.37GHz were-0.22 dB and-0.35 dB, respectively, at which time PCR reached 95%.
In an alternative embodiment of the present application, please refer to fig. 8 and fig. 9, in which fig. 8 is a graph of cross polarization transmission coefficient corresponding to an increase in polarization angle from 0 degree to 45 degrees under x polarization of a polarization conversion surface provided by an embodiment of the present invention, and fig. 9 is a graph of co polarization reflection coefficient corresponding to an increase in polarization angle from 0 degree to 45 degrees under x polarization of a polarization conversion surface provided by an embodiment of the present invention. The simulation condition 1 is used for simulation, and the transmission type dual-frequency polarization insensitive polarization conversion surface provided by the embodiment of the invention is simulated by different polarization angles under the incidence of x-polarized waves under the vertical incidence condition to obtain a cross polarization transmission coefficient and common polarization reflection coefficient curve, as shown in fig. 8 and 9, the transmission type polarization conversion surface provided by the embodiment does not influence the cross polarization coefficient and the common polarization coefficient when the polarization angle is changed from 0-45 degrees, which shows that the structure has the characteristic of insensitivity to the polarization angle of the incident wave, namely, the incoming wave with any polarization azimuth angle can be rotated by 90 degrees after being transmitted in two pass band ranges.
The invention provides a transmission type dual-frequency polarization insensitive conversion surface.A first resonance layer 10 comprises a plurality of first metal patch units 11 which are arranged in an array, the first metal patch units 11 at least comprise two first metal patches 12 which are arranged orthogonally, the first metal patches 12 comprise a first area 13-1 and a second area 13-2, wherein the resonance frequency of the first area 13-1 is different from the resonance frequency of the second area 13-2; the second resonant layer 50 includes a plurality of second metal patch units 51 arranged in an array, the second metal patch units 51 include at least two second metal patches 52 arranged orthogonally, and the second metal patches 52 include a third area 53-1 and a fourth area 53-2, where a resonant frequency of the third area 53-1 is different from a resonant frequency of the fourth area 53-2; therefore, the dual-band polarization conversion is realized, the high-efficiency polarization conversion is realized, the insertion loss is small, the section is low, and the microwave-based dual-band polarization conversion device is easy to integrate with other microwave devices.
The foregoing is a further detailed description of the invention in connection with specific preferred embodiments and it is not intended to limit the invention to the specific embodiments described. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all should be considered as belonging to the protection scope of the invention.
Claims (10)
1. A transmissive dual-frequency polarization insensitive switching surface comprising:
the first resonant layer comprises a plurality of first metal patch units arranged in an array manner, each first metal patch unit at least comprises two first metal patches arranged orthogonally, each first metal patch comprises a first area and a second area, and the resonant frequency of the first area is different from that of the second area;
the first dielectric layer is positioned on one side of the first resonance layer;
the metal floor layer is positioned on one side, away from the first resonance layer, of the first dielectric layer;
the second dielectric layer is positioned on one side, away from the first resonance layer, of the metal floor layer;
the second resonance layer is positioned on one side, away from the first resonance layer, of the second medium layer, and the first resonance layer and the second resonance layer are arranged correspondingly; the second resonance layer comprises a plurality of second metal patch units arranged in an array, each second metal patch unit at least comprises two second metal patches arranged orthogonally, each second metal patch comprises a third area and a fourth area, and the resonance frequency of the third area is different from the resonance frequency of the fourth area; the first metal patch is electrically connected with the second metal patch.
2. The transmissive dual-band polarization insensitive switching surface of claim 1, wherein the first metal patch element comprises 4 of the first metal patches, the first metal patches being rectangular;
the first metal patches are arranged in an annular orthogonal mode along a first direction, and the first direction is a clockwise direction or an anticlockwise direction.
3. The transmissive dual-band polarization insensitive switching surface of claim 2, wherein the first metal patch comprises a first U-shaped slot, the first metal patch positioned within the first U-shaped slot being the first region, the first metal patch positioned outside the first U-shaped slot being the second region, the first region having a resonant frequency greater than the second region.
4. The transmissive dual-band polarization insensitive switching surface of claim 1, wherein the second metal patch element comprises 4 of the second metal patches, the second metal patches being rectangular;
the second metal patches are arranged in an annular orthogonal mode along a second direction, and the second direction is the anticlockwise direction or the clockwise direction.
5. The transmissive dual-band polarization insensitive switching surface of claim 4, wherein the second metal patch comprises a second U-shaped slot, the second metal patch within the second U-shaped slot being the third region, the second metal patch outside the second U-shaped slot being the fourth region, the third region having a resonant frequency greater than the fourth region.
6. The transmissive dual-band polarization insensitive switching surface of claim 2 or 4, wherein each of the first metal patches is electrically connected to one of the second metal patches orthogonal thereto, and the first metal patch is electrically connected to the second metal patch through a via.
7. The transmissive dual-band polarization insensitive switching surface of claim 6, wherein the metal floor layer comprises a plurality of through holes; along the perpendicular to the direction on first resonance layer, the through-hole runs through metal floor layer, the through-hole is used for doing the via hole dodges the space.
8. The transmissive dual-frequency polarization insensitive switching surface of claim 1, wherein the first region is the same size as the third region, and the second region is the same size as the fourth region.
9. The transmissive dual-band polarization insensitive conversion surface of claim 1, wherein the first region has a dimension w along the third direction 1 ，0.0143λ 1 <w 1 <0.0152λ 1 (ii) a The first region has a dimension l in a fourth direction 1 ，0.160λ 1 <l 1 <0.258λ 1 (ii) a The third direction intersects the fourth direction, λ 1 The vacuum wavelength is corresponding to the resonant frequency of the first area in the first metal patch.
10. The transmissive dual-band polarization insensitive conversion surface of claim 1, wherein the second region has a dimension w along the third direction 2 ，0.0432λ 2 <w 2 <0.0434λ 2 (ii) a The second region has a dimension l in a fourth direction 2 ，0.201λ 2 <l 2 <0.258λ 2 (ii) a The third direction intersects the fourth direction, λ 2 The vacuum wavelength is corresponding to the resonance frequency of the second area in the first metal patch.
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| CN202210694244.9A CN115173078B (en) | 2022-06-15 | Transmission type dual-frequency polarization insensitive conversion surface |
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| CN202210694244.9A CN115173078B (en) | 2022-06-15 | Transmission type dual-frequency polarization insensitive conversion surface |
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