CN115172398A - Method for opening pad of back-illuminated image sensor - Google Patents
Method for opening pad of back-illuminated image sensor Download PDFInfo
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- CN115172398A CN115172398A CN202210904503.6A CN202210904503A CN115172398A CN 115172398 A CN115172398 A CN 115172398A CN 202210904503 A CN202210904503 A CN 202210904503A CN 115172398 A CN115172398 A CN 115172398A
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- 238000000034 method Methods 0.000 title claims abstract description 45
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- 238000001259 photo etching Methods 0.000 claims abstract description 41
- 238000001459 lithography Methods 0.000 claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 238000012805 post-processing Methods 0.000 claims abstract description 6
- 230000008569 process Effects 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 9
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- 238000004026 adhesive bonding Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 181
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- 230000000903 blocking effect Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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Abstract
The invention provides a method for opening a pad of a back-illuminated image sensor, which comprises the following steps: manufacturing an identification pattern on the back surface of the slide wafer through a Sus photoetching machine according to the pattern surface of the slide wafer; bonding the slide glass wafer and the sensor wafer into an integrated structure, and thinning the sensor wafer; identifying, by the suss lithography machine, the identification pattern and exposing a pad pattern on the sensor wafer; and performing post-processing on the pad pattern to realize pad opening. By adopting the technical scheme, the back-illuminated image sensor bonding pad can be opened by adopting low-cost equipment.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a method for opening a pad of a back-illuminated image sensor.
Background
The basic structure of the wafer of the back-illuminated sensor is formed by vertically stacking and bonding a wafer of carrier glass and a wafer of sensor through a pattern surface to a pattern surface, so that the pattern surface of the wafer of the back-illuminated sensor is positioned at a bonding interface, and as silicon at the bonding interface has a blocking effect on laser and halogen lamp light, a conventional photoetching machine cannot identify a mark at the bonding interface, so that the pattern surface cannot be identified, and the purpose of opening a bonding pad cannot be realized. Currently, the industry generally adopts a blind-open process or an infrared alignment process to solve the problem. The blind opening process uses a wafer notch to carry out mechanical alignment, then 4-20 micrometers of silicon is etched cleanly at a specific position to expose an alignment mark, so that a pad can be opened by using a conventional photoetching machine, and the infrared alignment process uses an infrared light source to penetrate through the silicon to further identify a mark at a bonding interface to realize pad opening. However, a photolithography and deep silicon etching process is added in the blind opening process, the deep silicon etching equipment is expensive, an infrared lithography machine is needed for the infrared alignment process, and the infrared lithography machine is often more expensive.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a method for opening a pad of a back-illuminated image sensor, which can realize the opening of the pad of the back-illuminated image sensor by adopting low-cost equipment.
In order to achieve the purpose, the invention adopts the following specific technical scheme:
the method for opening the pad of the back-illuminated image sensor provided by the embodiment of the invention comprises the following steps: s100, manufacturing an identification pattern on the back surface of the slide glass wafer through a Sus photoetching machine according to the pattern surface of the slide glass wafer; s200, bonding the slide wafer and the sensor wafer graph surface into an integrated structure, and thinning the sensor wafer; s300, identifying the identification pattern through the Sus photoetching machine and exposing a pad pattern on the sensor wafer; s400, performing post-processing on the pad pattern to open the pad.
It should be noted that the cost of the SUSS lithography machine, also known as SUSS lithography machine, is much lower than the cost of the infrared lithography machine and the cost of the deep silicon etching equipment, and the SUSS lithography machine can produce an identification pattern on a wafer and also can identify a pattern on a pattern surface and an identification pattern, but the SUSS lithography machine cannot identify a mark at a bonding interface, so that the pattern surface at the bonding interface cannot be identified, and the opening of a pad of a backside illuminated sensor cannot be realized.
The method for opening the back side illumination type image sensor bonding pad provided by the embodiment of the invention at least has the following beneficial effects: before the slide glass wafer and the sensor wafer are bonded, a Sus photoetching machine is used for identifying the graphic surface of the slide glass wafer (the graphic surface of the slide glass wafer is the front surface of the slide glass wafer) and manufacturing an identification pattern on the back surface of the slide glass wafer, the graphic surface of the slide glass wafer is positioned at the bonding interface after the slide glass wafer and the sensor wafer are bonded, but the identification pattern manufactured before the bonding is positioned at the back surface of the slide glass wafer and is not positioned at the bonding interface, so that the identification pattern manufactured before the bonding can be identified, and the bonding pad of the sensor wafer is opened by identifying the identification pattern manufactured before the bonding, so that the bonding pad of the back-illuminated image sensor is opened by the low-cost Sus photoetching machine. .
According to some embodiments of the invention, said step S100 comprises:
s110, pasting a protective film on the pattern surface;
s120, turning over the slide glass wafer to enable the back surface of the slide glass wafer to face upwards, and removing the back sealing structure of the slide glass wafer;
s130, gluing the back of the slide glass wafer;
s140, conveying the slide glass wafer into a Sores photoetching machine, identifying the pattern surface of the slide glass wafer through the Sores photoetching machine, and exposing the identification pattern on the back surface of the slide glass wafer;
s150, developing, etching and removing the photoresist on the back of the slide glass wafer.
According to some embodiments of the invention, the protective film is one of a blue film, a UV film, or a high temperature resistant film.
According to some embodiments of the invention, the step S120 includes thinning and cleaning the back side of the carrier wafer, the thinned thickness being 3-80 microns.
According to some embodiments of the invention, the step 100 further comprises: and thinning and cleaning the back of the slide glass wafer, and performing silicon dioxide deposition on the back of the slide glass wafer, wherein the deposition thickness is 0.2-2 microns. According to some embodiments of the invention, the identification pattern is a cross mark.
According to some embodiments of the invention, the sensor wafer is reduced in thickness to 4-20 microns.
According to some embodiments of the invention, said step S300 comprises: s310, enabling the sensor wafer to be located above the slide glass wafer, and coating glue on the surface of the sensor wafer; and S320, transferring the sensor wafer and the slide glass wafer into the Sores photoetching machine, identifying the identification pattern of the slide glass wafer through the Sores photoetching machine, and exposing a bonding pad pattern on the sensor wafer.
According to some embodiments of the invention, the identification pattern is identified using a backside alignment function of a suss lithography machine, exposing a pad pattern on the backside of the sensor wafer.
According to some embodiments of the invention, the step S400 comprises: and carrying out developing, etching and photoresist removing processes on the sensor wafer.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a flow chart of a method for backside illuminated image sensor pad opening according to an embodiment of the present invention;
FIG. 2 is a flowchart of step S100 according to an embodiment of the present invention;
fig. 3 is a flowchart of step S300 according to an embodiment of the present invention.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the following description, the same reference numerals are used for the same blocks. In the case of the same reference numerals, their names and functions are also the same. Therefore, detailed description thereof will not be repeated.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the invention.
The positive-type image sensor wafer has patterns and marks on the surface of the wafer, so that the purpose of opening the bonding pads can be realized through a conventional photoetching process. However, the basic structure of the back-illuminated image sensor wafer is formed by vertically stacking and bonding a carrying wafer and a sensor wafer pattern facing to the pattern surface. Therefore, the pattern surface of the slide wafer is positioned at the bonding interface, and due to the blocking effect of silicon on laser and halogen lamp light, the conventional photoetching machine cannot identify the mark at the bonding interface, so that the pattern surface cannot be identified, and the purpose of opening the bonding pad cannot be realized.
Therefore, the invention provides a method for opening a pad of a back-illuminated image sensor, aiming at realizing the opening of the pad of the back-illuminated image sensor through a lower-price and lower-cost Sus photoetching machine.
According to the method for opening the pad of the back-illuminated image sensor provided by the embodiment of the invention, as shown in fig. 1, the method comprises the following steps: s100, manufacturing an identification pattern on the back surface of the slide glass wafer through a Sus photoetching machine according to the pattern surface of the slide glass wafer; s200, bonding the slide wafer and the sensor wafer into an integrated structure, and thinning the sensor wafer; s300, identifying the pattern through a Sus photoetching machine and exposing a pad pattern on the sensor wafer; and S400, performing post-processing on the pad pattern to open the pad.
The pattern surface is generally positioned on the front surface of the wafer, the identification pattern is manufactured on the back surface of the slide glass wafer according to the pattern surface of the slide glass wafer before the slide glass wafer is bonded with the sensor wafer, and after the slide glass wafer is bonded with the sensor wafer, the pattern surface of the slide glass wafer cannot be identified at a bonding interface, but the identification pattern on the back surface of the slide glass wafer can be normally identified, so that the pad pattern can be exposed on the sensor wafer according to the identification pattern, and a subsequent pad opening process can be carried out.
In the prior art, the price of an infrared photoetching machine of deep silicon etching equipment and an infrared alignment process used in a blind-open process is often as high as more than ten million RMB, and the production cost is high. The method can be realized by adopting a Sus photoetching machine or other photoetching machines, the equipment price is lower, and the production cost is greatly reduced.
The cost of the SUSS photoetching machine is far lower than that of an infrared photoetching machine and that of deep silicon etching equipment, the SUSS photoetching machine can manufacture identification patterns on wafers and also can identify patterns on a pattern surface and the identification patterns, but the SUSS photoetching machine cannot identify marks on a bonding interface, so that the pattern surface on the bonding interface cannot be identified, and the opening of a bonding pad of a backside illuminated sensor cannot be realized.
The slide wafer can be a wafer which has no circuit and only plays a bearing role, or a wafer which has a logic circuit and plays a signal processing role, and the slide wafer is hardly influenced or has little influence when the identification pattern is manufactured on the slide wafer.
And S100, manufacturing an identification pattern on the back surface of the slide glass wafer through a Sus photoetching machine according to the pattern surface of the slide glass wafer. The pad opening process is performed by recognizing the recognition pattern in a subsequent process.
And S200, bonding the slide glass wafer and the sensor wafer into an integrated structure in a mode that the graph faces the graph surface, and thinning the sensor wafer. And bonding and thinning the slide wafer and the sensor wafer after the slide wafer is processed.
Step S300, recognizing the recognition pattern by the suss lithography machine and exposing a pad pattern on the sensor wafer. After the carrier wafer and the sensor wafer are bonded, the pattern surface of the carrier wafer at the bonding interface cannot be identified, so that the sensor wafer is exposed through the identification pattern manufactured in the identification step S100, and the exposure pattern is a pad pattern.
And step S400, performing post-processing on the pad pattern to open the pad. After the sensor wafer is exposed with the bonding pad patterns, the bonding pads can be opened through post-processing.
Before the slide glass wafer and the sensor wafer are bonded, a Sus photoetching machine is used for identifying the graphic surface of the slide glass wafer (the graphic surface of the slide glass wafer is the front surface of the slide glass wafer) and manufacturing an identification pattern on the back surface of the slide glass wafer, the graphic surface of the slide glass wafer is positioned at the bonding interface after the slide glass wafer and the sensor wafer are bonded, but the identification pattern manufactured before the bonding is positioned at the back surface of the slide glass wafer and is not positioned at the bonding interface, so that the identification pattern manufactured before the bonding can be identified, and the bonding pad of the sensor wafer is opened by identifying the identification pattern manufactured before the bonding, so that the bonding pad of the back-illuminated image sensor is opened by the low-cost Sus photoetching machine.
According to some embodiments of the invention, as shown in fig. 2, step S100 comprises: s110, pasting a protective film on the pattern surface; s120, turning over the slide wafer to enable the back surface of the slide wafer to face upwards, and removing the back seal structure of the slide wafer; s130, gluing the back of the slide wafer; s140, conveying the slide glass wafer into a Sus photoetching machine, identifying the pattern surface of the slide glass wafer through the Sus photoetching machine, and exposing the identification pattern on the back surface of the slide glass wafer; s150, developing, etching and removing the photoresist on the back of the slide wafer.
And step S110, attaching a protective film on the pattern surface to protect the pattern of the pattern surface and prevent the pattern surface from being stained or scratched in the subsequent process.
According to some embodiments of the invention, the protective film is one of a blue film, a UV film, or a high temperature resistant film.
And step S120, turning over the slide glass wafer to enable the back surface of the slide glass wafer to face upwards, and removing the back sealing structure of the slide glass wafer.
And turning the carrier wafer by using a vacuum suction pen, so that the back surface of the carrier wafer faces upwards and the pattern surface faces downwards, and removing the back sealing structure on the back surface of the carrier wafer to expose the silicon on the back surface of the carrier wafer.
According to some embodiments of the invention, step S120 includes thinning and cleaning the backside of the carrier wafer, the thinned thickness being 3-80 microns.
And thinning the back of the carrier wafer, wherein the thickness of the removed material in the thinning process is 3-80 microns, so that the back sealing structure of the carrier wafer is completely removed.
When the thickness of the removed material is less than 3 microns, the back sealing structure of the slide glass wafer is not completely removed, and when the thickness of the removed material is more than 80 microns, the slide glass wafer is affected.
After the slide wafer is thinned, the back of the slide wafer is cleaned, and the influence of scraps generated in the thinning process on the subsequent process is avoided.
And cleaning the back surface of the slide wafer by using deionized water or No. 1 cleaning solution.
It is understood that other chemical solutions may be used to clean the backside of the carrier wafer.
According to some embodiments of the invention, step 100 further comprises: and after thinning and cleaning the back surface of the slide glass wafer, performing silicon dioxide deposition on the back surface of the slide glass wafer by a chemical vapor deposition method under a low-temperature condition, wherein the deposition thickness is 0.2-2 microns.
After the back-sealing structure is removed, the silicon of the carrier wafer is exposed, and in some cases, the back surface of the carrier wafer needs to be made of other materials. Taking silicon dioxide as an example, when the back surface of the slide glass wafer needs silicon dioxide, silicon dioxide deposition is carried out on the back surface of the slide glass wafer, and the deposition thickness is 0.2-2 microns, so that the requirement can be met.
It is understood that the deposition material may be other materials, and the embodiments of the present invention are not limited thereto.
It will be appreciated that when the silicon on the back side of the carrier wafer meets the process requirements, there is no need to deposit material on the back side of the carrier wafer.
Step S130, coating photoresist on the back of the slide wafer.
Step S140, transferring the slide glass wafer into a Sus photoetching machine, identifying the pattern surface of the slide glass wafer through the Sus photoetching machine, and exposing the identification pattern on the back surface of the slide glass wafer;
the pattern is identified on the back surface of the slide wafer by using the back surface alignment function of the suss lithography machine, the identification pattern is exposed on the back surface of the slide wafer, and the pattern surface of the slide wafer faces downwards due to the fact that the slide wafer is turned over in the step S120, and the pattern surface mark can be directly identified through the back surface alignment function of the suss lithography machine. The backside of the carrier wafer has been coated with glue in step S130, so that the patterned surface of the carrier wafer is recognized by the suss lithography machine, and the recognition pattern is exposed on the photoresist on the backside of the carrier wafer.
And S150, developing, etching and removing the photoresist on the back of the slide wafer.
After the identification pattern is exposed, the identification pattern is not displayed, the slide glass wafer needs to be developed, and the slide glass wafer is etched to the etching depth of 0.2-2 microns, so that the exposed identification pattern is displayed. And removing the photoresist after etching to finish the manufacturing process of the identification pattern.
According to some embodiments of the invention, the identification pattern is a cross mark. The cross mark can be recognized by a suss lithography machine.
It will be appreciated that other patterns that can be recognized by a lithography machine may also be used to recognize patterns.
According to some embodiments of the invention, the sensor wafer thickness is 4-20 microns after thinning. The sensor wafer thickness can keep good working effect when being 4-20 microns.
According to some embodiments of the invention, as shown in fig. 3, step S300 comprises: s310, enabling the sensor wafer to be positioned above the slide wafer, and coating glue on the surface of the sensor wafer; and S320, conveying the sensor wafer and the slide glass wafer into a Sus photoetching machine, identifying the identification pattern of the slide glass wafer through the Sus photoetching machine, and exposing the bonding pad pattern on the sensor wafer.
Step S310, the sensor wafer is positioned above the slide wafer, and the surface of the sensor wafer is coated with glue.
The sensor wafer and the slide glass wafer are bonded to form an integrated structure, the relative positions of the sensor wafer and the slide glass wafer are adjusted to enable the sensor wafer to be located above the slide glass wafer, and the slide glass wafer identification pattern is located at the bottom of the integrated structure formed after the slide glass wafer and the sensor wafer are bonded. And coating photoresist on the surface of the sensor wafer.
It should be noted that the sensor wafer surface may be cleaned with deionized water or No. 1 cleaning solution before the sensor wafer surface is coated with glue.
Step S320, the sensor wafer and the slide glass wafer are conveyed into a Sus photoetching machine, the identification pattern of the slide glass wafer is identified through the Sus photoetching machine, and the bonding pad pattern is exposed on the sensor wafer.
And identifying the identification pattern of the slide glass wafer through a Sus photoetching machine, and exposing the bonding pad pattern on the gluing surface of the sensor wafer.
According to some embodiments of the present invention, a pad pattern is exposed on the backside of the sensor wafer using the backside alignment function of the suss lithography machine, identifying the identification pattern. In step S310, the relative position between the sensor wafer and the carrier wafer is adjusted, the identification pattern is located at the bottom of the integrated structure formed by bonding the carrier wafer and the sensor wafer, and the pad pattern can be exposed on the back surface of the sensor wafer by directly using the back surface alignment function of the suss lithography machine to identify the identification pattern.
According to some embodiments of the invention, step S400 comprises: and carrying out developing, etching and photoresist removing processes on the sensor wafer.
After exposing the pad pattern, the pad pattern is not displayed, and the sensor wafer needs to be developed and etched to display the exposed pad pattern. And removing the photoresist after etching to finish the opening process of the bonding pad.
In the description of the specification, reference to the description of "one embodiment," "some embodiments," "an example," "a specific example," or "some examples" or the like means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
The above embodiments of the present invention should not be construed as limiting the scope of the present invention. Any other corresponding changes and modifications made according to the technical idea of the present invention should be included in the protection scope of the claims of the present invention.
Claims (10)
1. A method for opening a pad of a back-illuminated image sensor, comprising:
s100, manufacturing an identification pattern on the back surface of the slide glass wafer through a Sus photoetching machine;
s200, bonding the slide glass wafer and the sensor wafer into an integrated structure, and thinning the sensor wafer;
s300, identifying the identification pattern through the Sus photoetching machine and exposing a pad pattern on the sensor wafer;
s400, performing post-processing on the pad pattern to open the pad.
2. The back-illuminated image sensor pad opening method as claimed in claim 1, wherein the step S100 comprises:
s110, pasting a protective film on the pattern surface;
s120, turning over the slide glass wafer to enable the back surface of the slide glass wafer to face upwards, and removing the back sealing structure of the slide glass wafer;
s130, gluing the back of the slide glass wafer;
s140, conveying the slide glass wafer into a Sores photoetching machine, identifying the pattern surface of the slide glass wafer through the Sores photoetching machine, and exposing the identification pattern on the back surface of the slide glass wafer;
s150, developing, etching and removing photoresist on the back of the slide glass wafer.
3. The method of opening a pad of a back-illuminated image sensor of claim 2, wherein the protective film is one of a blue film, a UV film, or a high temperature resistant film.
4. The method for opening a pad of a back-illuminated image sensor of claim 2, wherein the step S120 comprises thinning and cleaning the backside of the carrier wafer, the thinned thickness being 3-80 μm.
5. The method of backside illuminated image sensor pad opening as recited in claim 4, wherein the step 100 further comprises: and after thinning and cleaning the back surface of the slide glass wafer, performing silicon dioxide deposition on the back surface of the slide glass wafer, wherein the deposition thickness is 0.2-2 microns.
6. The method for opening a pad of a back-illuminated image sensor as claimed in claim 5, wherein the recognition pattern is a cross mark.
7. The method for opening a pad of a back-illuminated image sensor of claim 1, wherein the sensor wafer has a thickness of 4-20 microns after thinning.
8. The method for opening a pad of a back-illuminated image sensor as claimed in claim 1, wherein the step S300 comprises:
s310, enabling the sensor wafer to be located above the slide glass wafer, and coating glue on the surface of the sensor wafer;
s320, conveying the sensor wafer and the slide glass wafer into the Sores photoetching machine, identifying the identification patterns on the slide glass wafer through the Sores photoetching machine, and exposing pad patterns on the sensor wafer.
9. The method of claim 8, wherein the recognition pattern is recognized by a backside alignment function of a suss lithography machine, and the pad pattern is exposed on the backside of the sensor wafer.
10. The method for opening a pad of a back-illuminated image sensor as claimed in claim 1, wherein the step S400 comprises: and carrying out developing, etching and photoresist removing processes on the sensor wafer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210904503.6A CN115172398A (en) | 2022-07-29 | 2022-07-29 | Method for opening pad of back-illuminated image sensor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210904503.6A CN115172398A (en) | 2022-07-29 | 2022-07-29 | Method for opening pad of back-illuminated image sensor |
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| CN115172398A true CN115172398A (en) | 2022-10-11 |
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| CN202210904503.6A Pending CN115172398A (en) | 2022-07-29 | 2022-07-29 | Method for opening pad of back-illuminated image sensor |
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