CN101354528A - Mask and related photo-etching method - Google Patents
Mask and related photo-etching method Download PDFInfo
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- CN101354528A CN101354528A CNA2007101381373A CN200710138137A CN101354528A CN 101354528 A CN101354528 A CN 101354528A CN A2007101381373 A CNA2007101381373 A CN A2007101381373A CN 200710138137 A CN200710138137 A CN 200710138137A CN 101354528 A CN101354528 A CN 101354528A
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Abstract
The invention provides a mask and a corresponding photolithographic method, wherein, the mask comprises a substrate which is provided with an active area, a first pattern which is positioned in the active area and surrounded by a plurality of cutting paths, and a second pattern which is positioned on the substrate and formed by the amplification of the first pattern.
Description
Technical field
The present invention relates to a kind of mask (photomask) and relevant photoetching method, and be particularly related to a kind of mask of auxiliary identification pattern and relevant photoetching method.
Background technology
Photoetching (lithography) is to make one of committed step of wafer, and its yield rate that influences product is very dark.Generally speaking, photoetching process comprises eight main steps: gas phase linging, rotary coating, soft roasting, aligning and exposure, postexposure bake, development, hard roasting, inspect after developing.Wherein in aligning and step of exposure, at first, provide the wafer of mask and covering photoresist, mask needs and covers the appropriate location aligning of the wafer of photoresist.Then, the mask of aligning and wafer are exposed under ultraviolet (UV) light, and ultraviolet light can make the light-sensitive compound activation in the photoresist, and the pattern with mask successfully is transferred on the wafer that scribbles photoresist thus.Be transferred to the pattern definable size of component of wafer or be used for follow-up etching and technology such as ion injection.
Fig. 1 illustrates known mask 100.Mask 100 comprises substrate 101, and substrate 101 is generally glass plate or quartz plate.Substrate 101 has useful area district 110 and around the electrostatic ring 120 in useful area district 110, has mask pattern 103 to be formed in the substrate 101 in useful area district 110.Mask pattern 103 is made of opaque chromium (chromium) film, can mask pattern 103 be transferred to wafer with element or circuit on the definition wafer by photoetching process.For the image that makes each road mask institute projection and the pattern on the wafer correctly mate, have more aligned pattern (alignmentkey) 105 in the useful area district 110, aligned pattern 105 not only auxiliary mask pattern 103 is transferred to the tram of wafer exactly, but and the service orientation of the operating personnel's identification mask 100 on the aligned pattern 105 supplement production lines.Generally speaking, outside useful area district 110, mask 100 has identification code 107, and identification code 107 is one group of cognizable coding of naked eyes, and the operating personnel on the production line can and select desired mask by identification code 107 identifications.
Yet the similarity degree between the identification code of different masks is often very big, therefore still takes place often must do over again with the situation of wrong mask on the wafer manufacture line, thereby increases production cost.
Summary of the invention
One of purpose of the present invention is to reduce on the production line frequency with wrong mask, and the property in the right direction that operating personnel's identification mask uses on the supplement production line.
In view of this, the invention provides a kind of mask, comprising: substrate has the useful area district; First pattern, among this useful area district, wherein this first pattern by a plurality of Cutting Roads around; And second pattern, in this substrate, wherein this second pattern is to amplify from this first pattern.
The present invention provides a kind of mask again, comprising: substrate has the useful area district; First pattern is among this useful area district; Second pattern, in this substrate, wherein this second pattern is to amplify from this first pattern; Aligned pattern is among this useful area district; And the 3rd pattern, in this substrate, wherein the 3rd pattern is to amplify from this aligned pattern.
The present invention provides a kind of method of photoetching again, comprising: base material is provided; Light source is provided; Mask is provided, and between this base material and this light source, this mask is above-mentioned mask; And the pattern that shifts this mask is to this base material.
Description of drawings
Fig. 1 illustrates known mask 100;
Fig. 2 illustrates the mask 200 of the embodiment of the invention;
Fig. 3 illustrates the application of the mask 200 of the embodiment of the invention.
Description of reference numerals
100,200～mask 101,202～substrate
103～mask pattern 105,205～aligned pattern
107,207～identification code 110,210～useful area district
120,220～electrostatic ring, 203～the first patterns
213～the second patterns 215～the 3rd pattern
300～wafer, 400～light
Embodiment
The mask of the embodiment of the invention will be done detailed explanation following.Yet following examples are not the unique utilization of the present invention, and present embodiment only is that ad hoc structure of the present invention or method are implemented in explanation, and it is non-in order to limit the present invention and claim.
Fig. 2 to 3 illustrates the mask 200 of the embodiment of the invention respectively and uses.Please refer to Fig. 3, the mask 200 of the embodiment of the invention can be used in various photoetching processes, for example can be used for the photoetching process of light emitting diode (LED).Mask 200 has transparent and opaque zone; Wafer 300 is as the base material that is transferred pattern 203 on the mask 200 in technology, and wafer 300 comprises in order to make the base material of light emitting diode, for example materials such as silicon, gallium phosphide, gallium arsenide or gallium nitride; The surface coverage of wafer 300 has photoresist layer (not illustrating among the figure).The light 400 that sends from light source, ultraviolet (UV) light for example, can pass the transparent region of the mask 200 behind the aligning and pattern 203 on the transfer mask to wafer 300.In one embodiment, wafer 300 is 2 inches a silicon wafer, and mask 200 length of sides are 4 inches square.In photoetching process, but the surface of mask 200 contact wafers 300: and perhaps, mask 200 can have the interval S that has greater than zero with the surface of wafer 300.In other embodiments, between mask 200 and wafer 300 surfaces, can have lens.
Please refer to Fig. 2, mask 200 comprises substrate 202, and substrate 202 can comprise transparent substrates, for example glass plate or quartz plate.Substrate 202 has useful area district 210 and around the electrostatic ring 220 in useful area district 210.Substrate 210 can be square or rectangle, and in one embodiment, substrate 210 is a square, and its length of side L1 is about 4 inches.Useful area district 210 can be square or rectangle, and in one embodiment, useful area district 210 is a square, and its length of side L2 is about 3 inches.Outside useful area district 210, mask 200 has identification code 207, and identification code 207 is one group of cognizable coding of naked eyes, and the operating personnel on the production line can be by identification code 207 identifications and the mask of selecting each photoetching process institute desire to use.Mask 200 has more cognizable pattern 213 of naked eyes and pattern 215, below will carefully illustrate.
In useful area district 210, there is first pattern 203 to be formed in the substrate 202.First pattern 203 is a mask pattern, the complete pattern of one chip for example, its can by 230 of a plurality of Cutting Roads (scribe line) around.Can spread all over a plurality of identical chip design arrays in the substrate 202, between chip design and the chip design then with Cutting Road 230 as separating.First pattern 203 can be made of opaque chromium (chromium) film.Can first pattern 203 be transferred to wafer by photoetching process, with definition on the wafer element, circuit or be used for follow-up etching and technology such as ion injection.
Have more aligned pattern (alignment key) 205 in the useful area district 210, aligned pattern 205 can make that already present pattern correctly mates on the image of each the road mask institute projection in the semiconductor technology and the wafer.By inspect aligned pattern 205 at microscopically, not only auxiliary first pattern 203 of aligned pattern 205 is transferred to the tram of wafer exactly, but and the service orientation of the operating personnel's identification mask 200 on the aligned pattern 205 supplement production lines.
Different with known mask is, mask 200 has second pattern 213 in substrate 202, and wherein second pattern 213 is to amplify from first pattern 203.Second pattern 213 can be the amplification pattern of chip design, but and second pattern 213 be the naked eyes identification, the operating personnel on the production line do not need in microscopically identification mask 200 pairing figure layers thus, and can inspect the pattern on the mask fast.For example, second pattern 213 is to amplify about 1 times to 100 times from first pattern 203, but not as limit, as long as the size of second pattern 213 can allow on the line operating personnel with the naked eyes identification, and to influence being patterned as of wafer not good because of the useful area district 210 that occupies too much mask 200.In one embodiment, second pattern 213 is positioned within the useful area district 210, and is positioned at the corner in useful area district 210, about 1 centimeter * 1 centimeter of the size of second pattern 213.
According to the explanation of the foregoing description, not only reduce on the production line the frequency with wrong mask and the property in the right direction of operating personnel's identification mask use on the supplement production line forming second pattern 213 and/or the 3rd pattern 215 on the mask.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; those skilled in the art without departing from the spirit and scope of the present invention, when can doing to change and retouching, so protection scope of the present invention is when looking being as the criterion that accompanying Claim defines.
Claims (34)
1. mask comprises:
Substrate has the useful area district;
First pattern, among this useful area district, wherein this first pattern by a plurality of Cutting Roads around; And
Second pattern, in this substrate, wherein this second pattern is to amplify from this first pattern.
2. mask as claimed in claim 1, but wherein this second pattern is the naked eyes identification.
3. mask as claimed in claim 1, wherein this second pattern is for to amplify about 1 times to 100 times from this first pattern.
4. mask as claimed in claim 1 also comprises:
Aligned pattern is among this useful area district.
5. mask as claimed in claim 4 also comprises:
The 3rd pattern, in this substrate, wherein the 3rd pattern is to amplify from this aligned pattern.
6. mask as claimed in claim 5, the 3rd pattern is for to amplify about 1 times to 100 times from this aligned pattern.
7. mask as claimed in claim 5, but wherein the 3rd pattern is the naked eyes identification.
8. mask as claimed in claim 5, wherein the 3rd pattern is positioned at the corner in this useful area district.
9. mask as claimed in claim 5, wherein this second pattern and the 3rd pattern lay respectively at two corners in this useful area district.
10. mask as claimed in claim 1, wherein this second pattern is positioned at the corner in this useful area district.
11. mask as claimed in claim 1 also comprises:
Identification code is on this substrate.
12. mask as claimed in claim 11, wherein this identification code is outside this useful area district.
13. mask as claimed in claim 1, wherein this substrate comprises transparent substrates.
14. mask as claimed in claim 1, wherein this substrate comprises glass or quartz.
15. mask as claimed in claim 1, wherein this useful area district is square or rectangle.
16. mask as claimed in claim 1, wherein this substrate comprises electrostatic ring, and this electrostatic ring is around this useful area district.
17. a mask comprises:
Substrate has the useful area district;
First pattern is among this useful area district;
Second pattern, in this substrate, wherein this second pattern is to amplify from this first pattern;
Aligned pattern is among this useful area district; And
The 3rd pattern, in this substrate, wherein the 3rd pattern is to amplify from this aligned pattern.
18. mask as claimed in claim 17, but wherein this second pattern is the naked eyes identification.
19. mask as claimed in claim 17, wherein this second pattern is for to amplify about 1 times to 100 times from this first pattern.
20. mask as claimed in claim 17, wherein the 3rd pattern is for to amplify about 1 times to 100 times from this aligned pattern.
21. mask as claimed in claim 17, but wherein the 3rd pattern is the naked eyes identification.
22. mask as claimed in claim 17, wherein this second pattern is positioned at the corner in this useful area district.
23. mask as claimed in claim 17, wherein the 3rd pattern is positioned at the corner in this useful area district.
24. mask as claimed in claim 17, wherein this second pattern and the 3rd pattern lay respectively at two corners in this useful area district.
25. mask as claimed in claim 17 also comprises:
Identification code is on this substrate.
26. mask as claimed in claim 25, wherein this identification code is outside this useful area district.
27. mask as claimed in claim 17, wherein this substrate comprises transparent substrates.
28. mask as claimed in claim 17, wherein this substrate comprises glass or quartz.
29. mask as claimed in claim 17, wherein this useful area district is square or rectangle.
30. mask as claimed in claim 17, wherein this substrate comprises electrostatic ring, and this electrostatic ring is around this useful area district.
31. one kind is used in the photoetching method of making light-emitting component, comprises:
Base material is provided;
Light source is provided;
Mask is provided, and between this base material and this light source, this mask is the described mask of claim 1; And
The pattern that shifts this mask is to this base material.
32. photoetching method as claimed in claim 31, this base material comprises the base material of light emitting diode.
33. one kind is used in the photoetching method of making light-emitting component, comprises:
Base material is provided;
Light source is provided;
Mask is provided, and between this base material and this light source, this mask is the described mask of claim 17; And
The pattern that shifts this mask is to this base material.
34. photoetching method as claimed in claim 33, this base material comprises the base material of light emitting diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101381373A CN101354528B (en) | 2007-07-26 | 2007-07-26 | Mask and related photo-etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101381373A CN101354528B (en) | 2007-07-26 | 2007-07-26 | Mask and related photo-etching method |
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| Publication Number | Publication Date |
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| CN101354528A true CN101354528A (en) | 2009-01-28 |
| CN101354528B CN101354528B (en) | 2011-01-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2007101381373A Active CN101354528B (en) | 2007-07-26 | 2007-07-26 | Mask and related photo-etching method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103091972A (en) * | 2011-11-03 | 2013-05-08 | 无锡华润上华科技有限公司 | Lithographic mask |
| CN103513516A (en) * | 2012-06-15 | 2014-01-15 | 富士通半导体股份有限公司 | Exposure method, exposure apparatus, and photomask |
| WO2023077623A1 (en) * | 2021-11-03 | 2023-05-11 | 长鑫存储技术有限公司 | Lithography system |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003121982A (en) * | 2001-10-11 | 2003-04-23 | Nikon Corp | Mask, method for exposure, aligner, and device manufacturing method |
| TWI264620B (en) * | 2003-03-07 | 2006-10-21 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
-
2007
- 2007-07-26 CN CN2007101381373A patent/CN101354528B/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103091972A (en) * | 2011-11-03 | 2013-05-08 | 无锡华润上华科技有限公司 | Lithographic mask |
| CN103091972B (en) * | 2011-11-03 | 2016-08-31 | 无锡华润上华科技有限公司 | A kind of mask |
| CN103513516A (en) * | 2012-06-15 | 2014-01-15 | 富士通半导体股份有限公司 | Exposure method, exposure apparatus, and photomask |
| US10012912B2 (en) | 2012-06-15 | 2018-07-03 | Fujitsu Semiconductor Limited | Exposure method, exposure apparatus, and photomask |
| WO2023077623A1 (en) * | 2021-11-03 | 2023-05-11 | 长鑫存储技术有限公司 | Lithography system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101354528B (en) | 2011-01-12 |
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