CN115166464A - Ultrafast pulse test system, test method and device - Google Patents
Ultrafast pulse test system, test method and device Download PDFInfo
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Abstract
The invention relates to the technical field of semiconductor device testing, in particular to an ultrafast pulse testing method, device and system, wherein the method comprises the following steps: applying pulses with gradually increased voltage amplitudes to the device to be tested to obtain corresponding drain-source current values and drain-source voltage values of the device to be tested under different pulses; obtaining a transient drain-source current-drain-source voltage curve and a static drain-source current-drain-source voltage curve of the device to be tested based on corresponding drain-source current values and drain-source voltage values under different pulses; based on the transient drain-source current-drain-source voltage curve and the static drain-source current-drain-source voltage curve, the influence of the self-heating effect of the device to be tested on the electrical characteristics of the device to be tested is determined, and further the influence of the self-heating effect of the semiconductor device on the electrical characteristics of the semiconductor device can be effectively analyzed.
Description
Technical Field
The invention relates to the technical field of semiconductor device testing, in particular to an ultrafast pulse testing system, an ultrafast pulse testing method and an ultrafast pulse testing device.
Background
The self-heating effect refers to a phenomenon that the temperature inside the device is increased due to heat generated by channel current, thereby causing the characteristic drift of the device, and therefore, the self-heating effect is one of the key factors limiting the performance of the device and the circuit.
The self-heating effect occurs in a short time, and when a direct current static test is adopted, the transient characteristic of the device cannot be accurately represented, particularly because the device has an obvious self-heating phenomenon when measured under the direct current static state. In order to overcome the self-heating effect caused by direct current test, a pulse I-V test method is commonly used at present, wherein the I-V test is completed in a very short time by applying pulse voltage with short pulse width to a tested device, the output characteristic of the device without the self-heating effect is obtained, and data support is provided for improving the structure and the process of the device. However, the implementation of the above method requires a special radio frequency test structure and device, and transient characteristics and dc characteristics under the same test condition cannot be obtained.
Therefore, accurate quantitative testing of the influence of the self-heating effect of the device is a technical problem to be solved at present.
Disclosure of Invention
In view of the above, the present invention is proposed to provide an ultrafast pulse test system, a test method and an apparatus that overcome or at least partially solve the above problems.
In a first aspect, the present invention further provides an ultrafast pulse testing method applied in an ultrafast pulse testing system, including:
applying pulses with gradually increased voltage amplitudes to a device to be tested to obtain corresponding drain-source current values and drain-source voltage values of the device to be tested under different pulses;
obtaining a transient drain-source current-drain-source voltage curve and a static drain-source current-drain-source voltage curve of the device to be tested based on the corresponding drain-source current value and drain-source voltage value under the different pulses;
and determining the influence of the self-heating effect of the device to be tested on the electrical characteristics of the device to be tested based on the transient drain-source current-drain-source voltage curve and the static drain-source current-drain-source voltage curve.
Further, the applying a pulse with an increasing voltage amplitude to the device under test to obtain a drain-source current value and a drain-source voltage value corresponding to the device under test under different pulses includes:
applying pulses with increasing voltage amplitudes to a device to be tested, and determining a corresponding voltage amplitude under each pulse based on the pulses with increasing voltage amplitudes;
and obtaining the drain-source current value and the drain-source voltage value of the device to be tested under different pulses by solving conversion based on the voltage amplitude corresponding to the pulse with each gradually increased voltage amplitude.
Further, applying a pulse with an increasing voltage amplitude to the device to be tested to obtain a drain-source current value and a drain-source voltage value corresponding to the device to be tested under different pulses, including:
applying pulses with gradually increased voltage amplitudes to a device to be tested, wherein each pulse has a preset pulse width, so that the device to be tested is heated to be self-heating stable in a preset pulse width period, and after one pulse is finished, waiting for a preset time length to enable the device to be tested to send the next pulse after being cooled until the working voltage of the device to be tested is reached, and obtaining a drain source current value and a drain source voltage value corresponding to the device to be tested under different pulses.
Further, the obtaining a transient drain-source current-drain-source voltage curve and a static drain-source current-drain-source voltage curve of the device to be tested based on the corresponding drain-source current value and drain-source voltage value under the different pulses includes:
obtaining transient voltage test data and static voltage test data of the device to be tested based on corresponding drain-source current values and drain-source voltage values under different pulses, wherein the transient voltage test data are test data acquired when the device to be tested does not have an obvious self-heating effect under the action of the pulses, the static voltage test data are test data acquired when the device to be tested has the obvious self-heating effect under the action of the pulses, the non-occurrence obvious self-heating effect is within the first 100ns of the pulses, and the occurrence obvious self-heating effect is in a steady-state period of the pulses;
and obtaining a transient drain-source current-drain-source voltage curve and a static drain-source current-drain-source voltage curve of the device to be tested based on the transient voltage test data and the static voltage test data of the device to be tested.
Further, before applying the pulse with the voltage amplitude increasing to the device under test, the method further comprises the following steps:
applying a direct current signal to the device to be tested to obtain a direct current voltage characteristic curve of the device to be tested;
after obtaining a transient drain-source current-drain-source voltage curve and a static drain-source current-drain-source voltage curve of the device to be tested based on the drain-source current value and the drain-source voltage value corresponding to the different voltage amplitudes, the method further comprises the following steps:
and calibrating the static drain-source current-drain-source voltage curve based on the direct current characteristic curve.
Further, the determining the influence of the self-heating effect of the device to be tested on the electrical characteristics of the device to be tested based on the transient drain-source current-drain-source voltage curve and the static drain-source current-drain-source voltage curve includes:
comparing the difference between a transient drain-source current-drain-source voltage curve and a static drain-source current-drain-source voltage curve of the device to be tested;
and determining the influence of the self-heating effect of the device to be tested on the electrical characteristics of the device to be tested based on the difference.
Further, the determining the influence of the self-heating effect of the device under test on the electrical characteristics of the device under test based on the difference comprises:
and quantitatively analyzing the influence of the self-heating effect of the device to be tested on the electrical characteristics of the device to be tested on the basis of the proportion of the difference.
In a second aspect, the present invention further provides a device characteristic testing apparatus, applied in an ultrafast pulse testing system, including:
the acquisition module is used for applying pulses with gradually increased voltage amplitudes to the device to be tested to acquire corresponding drain-source current values and drain-source voltage values of the device to be tested under different pulses;
an obtaining module, configured to obtain a transient drain-source current-drain-source voltage curve and a static drain-source current-drain-source voltage curve of the device to be tested based on the corresponding drain-source current value and drain-source voltage value under the different pulses;
and the determining module is used for determining the influence of the self-heating effect of the device to be tested on the electrical characteristics of the device to be tested based on the transient drain-source current-drain-source voltage curve and the static drain-source current-drain-source voltage curve.
In a third aspect, the present invention further provides an ultrafast pulse testing system, including:
the control module comprises a relay set, and the relay set comprises a first relay and a second relay;
a test module comprising a pulse test unit, the pulse test unit comprising: a waveform generator; the waveform generator includes: an output end; an oscilloscope comprising a first input;
the output end is connected with one end of the device to be tested through the first relay, and the first input end is connected with the other end of the device to be tested through the second relay.
Further, the pulse test unit further includes: a first coaxial cable, a second coaxial cable, and a third coaxial cable;
the waveform generator further includes: a trigger end;
the oscilloscope includes: a second input terminal;
the trigger end is connected with the second input end through a first coaxial cable;
the output end is connected with the first relay through a second coaxial cable;
the first input end is connected with the second relay through a third coaxial cable.
Further, the outer shell of the second coaxial cable is connected with the grounding end of the waveform generator;
and the shell of the third coaxial cable is connected with the grounding end of the oscilloscope.
Further, the test module further comprises:
a DC test unit, the DC test unit comprising: a semiconductor parameter tester;
one end of the semiconductor parameter tester is connected with the first relay through a fourth coaxial cable, and the other end of the semiconductor parameter tester is connected with the second relay through a fifth coaxial cable;
the control module is used for controlling the relay group to realize the connection of the direct current test unit and the device to be tested, or the connection of the pulse test unit and the device to be tested.
Furthermore, the outer shell of the fourth coaxial cable and the outer shell of the fifth coaxial cable are both connected with the grounding end of the semiconductor parameter tester.
Further, the control module further comprises:
an upper computer and a voltage source;
the voltage source is respectively connected with the upper computer, the first relay and the second relay;
the upper computer is used for issuing a test signal and receiving a sampling signal so as to process, display and store the sampling signal, wherein the sampling signal comprises a first voltage detected by a second input end of the oscilloscope and a second voltage of an output end of the waveform generator;
the processing the sampling signal includes:
obtaining the drain-source current I of the device to be tested according to the following formula d And drain-source voltage V d ：
V d ＝2V source -(R 1 +R 2 )·I d
Wherein, V scope Is the first voltage, V source Is said second voltage, R 1 Is the internal resistance, R, of the oscilloscope 2 Is the internal resistance of the waveform generator.
Further, the device under test specifically includes: a three electrode MOS device or a four electrode MOS device.
Further, when the device to be tested is a four-electrode MOS device, a gate electrode and a drain electrode of the device to be tested are in short circuit and are connected with the first relay through a sixth coaxial cable, and a source electrode and a body electrode of the device to be tested are in short circuit and are connected with the second relay through a seventh coaxial cable;
and the shell of the sixth coaxial cable and the shell of the seventh coaxial cable are respectively connected with the grounding end of the device to be tested.
Further, when the device to be tested is a three-electrode MOS device, a gate electrode and a drain electrode of the device to be tested are in short circuit and are connected with the first relay through a sixth coaxial cable, and a source electrode of the device to be tested is connected with the second relay through a seventh coaxial cable;
and the shell of the sixth coaxial cable and the shell of the seventh coaxial cable are respectively connected with the grounding end of the device to be tested.
Further, the short circuit is any one of the following:
and designing metal connection and probe connection during packaging and routing connection and integrated circuit manufacturing.
In a fourth aspect, the present invention also provides a computer device comprising a memory, a processor and a computer program stored on the memory and executable on the processor, the processor implementing the above-mentioned method steps when executing the program.
In a fifth aspect, the invention also provides a computer-readable storage medium, on which a computer program is stored which, when being executed by a processor, carries out the above-mentioned method steps.
One or more technical solutions in the embodiments of the present invention have at least the following technical effects or advantages:
the invention provides an ultrafast pulse testing method, which is applied to an ultrafast pulse testing system and comprises the following steps: applying pulses with gradually increased voltage amplitudes to the device to be tested to obtain corresponding drain-source current values and drain-source voltage values of the device to be tested under different pulses; obtaining a transient drain-source current-drain-source voltage curve and a static drain-source current-drain-source voltage curve of the device to be tested based on corresponding drain-source current values and drain-source voltage values under different pulses; based on the transient drain-source current-drain-source voltage curve and the static drain-source current-drain-source voltage curve, the influence of the self-heating effect of the device to be tested on the electrical characteristics of the device to be tested is determined, and then the influence of the self-heating effect of the semiconductor device on the electrical characteristics of the semiconductor device can be effectively analyzed.
Drawings
Various additional advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
FIG. 1 is a schematic diagram of an ultrafast pulse test system according to an embodiment of the present invention;
FIG. 2 is a flow chart illustrating the steps of the ultrafast pulse test method in an embodiment of the present invention;
FIG. 3 is a diagram illustrating a transient drain-source current-drain-source voltage curve and a quiescent current-drain-source voltage curve of a device under test in an embodiment of the invention;
FIG. 4 shows a schematic diagram of the pulse testing principle of the self-heating effect in an embodiment of the invention;
FIG. 5 is a schematic diagram showing a configuration of an apparatus for testing device characteristics in the embodiment of the present invention;
FIG. 6 is a schematic diagram showing a detailed structure of an ultrafast pulse test system in an embodiment of the present invention;
FIGS. 7a and 7b are schematic structural diagrams of a four-electrode MOS device in an embodiment of the invention;
fig. 8a and 8b are schematic structural diagrams of a three-electrode MOS device in the embodiment of the invention.
Fig. 9 is a schematic structural diagram of a computer device for implementing the ultrafast pulse measurement method in the embodiment of the present invention.
Description of reference numerals:
11-a control module, 12-a test module;
101-a device to be tested, 102-an input electrode, 103-an output electrode, 104-a grounding end, 105-a sixth coaxial cable, 106-a seventh coaxial cable, 107-a second coaxial cable, 108-a third coaxial cable, 109-a first coaxial cable, 110-a waveform generator, 111-an oscilloscope, 112-a first relay, 113-a second relay, 114-a voltage source, 115-an upper computer, 116-a fourth coaxial cable, 117-a fifth coaxial cable and 118-a semiconductor parameter tester.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
Example one
An embodiment of the present invention provides an ultrafast pulse measurement method, which is applied to an ultrafast pulse test system, where the ultrafast pulse test system is shown in fig. 1 and fig. 2, and the method includes:
s201, applying pulses with gradually increased voltage amplitudes to the device to be tested to obtain corresponding drain-source current values and drain-source voltage values of the device to be tested under different pulses;
s202, obtaining a transient drain-source current-drain-source voltage curve and a static drain-source current-drain-source voltage curve of the device to be tested based on corresponding drain-source current values and drain-source voltage values under different pulses;
s203, determining the influence of the self-heating effect of the device to be tested on the electrical characteristics of the device to be tested based on the transient drain-source current-drain-source voltage curve and the static drain-source current-drain-source voltage curve.
In a specific embodiment, as shown in fig. 1, the ultrafast pulse test system includes a three-part structure, where the first part is a control module 11, the second part is a test module 12, and the third part is a device under test 101. The control module 11 controls the test module 12 to test the device under test 101.
The control module 11 in the ultrafast pulse test system is used for controlling whether the pulse test unit is connected with the device 101 to be tested or the direct current test unit is connected with the device 101 to be tested.
The pulse testing unit is used for applying pulses to the device to be tested, the testing module 12 includes a waveform generator and an oscilloscope, the waveform generator is used for generating pulses under the action of the control module 11, and the oscilloscope is used for displaying the electrical characteristics of the device to be tested 101 under different pulses.
In S201, pulses with increasing voltage amplitudes are applied to the device 101 to be tested, the pulses with increasing voltage amplitudes may be pulses with uniform changes, where each pulse has a preset pulse width and may be set, so that the device 101 to be tested is heated to be self-heating stable in one preset pulse width device, and after one pulse is ended, the preset duration is waited, so that the device 101 to be tested is cooled and then sends the next pulse until the working voltage of the device 101 to be tested is reached. Preferably, the pulse width during the preset pulse width for warming to the self-heating steady state is greater than or equal to 1.
After applying the pulses with the voltage amplitudes increasing incrementally to the device to be tested 101, determining the corresponding voltage amplitude under each pulse based on the incrementally increasing pulses, and obtaining the drain-source current value and the drain-source voltage value corresponding to the device to be tested 101 under different pulses by solving and converting the voltage amplitude corresponding to the pulses with the incrementally increasing voltage amplitudes.
Specifically, the corresponding voltage amplitude under each pulse is the waveform generator outputThe voltage set by the output terminal, and the internal resistance of the waveform generator and the oscilloscope is known, namely the internal resistance of the waveform generator is R 1 Internal resistance of oscilloscope R 2 . And obtaining the drain-source current and the drain-source voltage of the device to be tested 101 under different pulses according to the ohm law and the kirchhoff law. The specific formula is as follows:
V d ＝2V scource -(R 1 +R 2 )·I d
wherein, V scope Is a first voltage, V, detected at a second input of the oscilloscope 110 source Is the second voltage, I, at the output of the waveform generator 111 d Is the drain-source current value, V, of the device under test 101 d Is the drain-source voltage value, R, of the device under test 101 1 Is the internal resistance, R, of the oscilloscope 110 2 Is the internal resistance of the waveform generator 111.
Therefore, according to the above solving and converting manner, the drain-source current and the drain-source voltage corresponding to the device under test 101 under different pulses are obtained.
Next, S502 is executed, and a transient drain-source current-drain-source voltage curve and a static drain-source current-drain-source voltage curve of the device under test 101 are obtained based on the corresponding drain-source current value and drain-source voltage value under different pulses.
Specifically, transient voltage test data and static voltage test data of the device 101 to be tested are obtained based on corresponding drain-source current values and drain-source voltage values under different pulses, the transient voltage test data are test data acquired when the device to be tested does not have an obvious self-heating effect under the action of the pulses, and the static voltage test data are test data acquired when the device to be tested 101 has an obvious self-heating effect under the action of the pulses. Then, based on the transient voltage test data and the static voltage test data of the device 101 to be tested, a transient drain-source current-drain-source voltage curve and a static drain-source current-drain-source voltage curve of the device 101 to be tested are obtained.
Wherein, the device under test 101 does not have an obvious self-heating effect, specifically within the first 100ns of the pulse.
Transient voltage test data points of the to-be-tested device 101 corresponding to different pulses are connected to obtain a transient drain-source current-drain-source voltage curve of the to-be-tested device 101, and static voltage test data of the to-be-tested device 101 corresponding to different pulses are connected to obtain a static current-drain-source voltage curve of the to-be-tested device 101, as shown in fig. 3.
The ultrafast pulse test system further comprises a direct current test unit, and the direct current test unit is used for applying direct current signals to the device to be tested to obtain a direct current voltage characteristic curve of the device to be tested. The dc voltage characteristic is also a current-voltage curve.
After S202, a static drain-source current-drain-source voltage curve is calibrated based on the dc characteristic curve. And a calibration mode is adopted to ensure that the ultrafast pulse test system is accurate. When the static drain-source current-drain-source voltage curve is consistent with the direct-current characteristic curve, the ultrafast pulse test system is determined to be accurate; otherwise, the test is inaccurate, and the reliability of the ultrafast pulse test system is improved.
According to the pulse testing principle of the self-heating effect, the current change value caused by the self-heating effect is collected by monitoring the correlation between the output current and the measuring time, as shown in fig. 4.
Finally, S203 is executed, and the influence of the self-heating effect of the device under test 101 on the electrical characteristics of the device under test is determined based on the transient drain-source current-drain-source voltage curve and the static drain-source current-drain-source voltage curve.
Specifically, as shown in fig. 3, when the difference between the transient drain-source current-drain-source voltage curve and the static drain-source current-drain-source voltage curve of the device 101 to be tested is large, it is determined that the self-heating effect of the device to be tested has a large influence on the electrical characteristics of the device to be tested, and certainly, when the difference between the transient drain-source current-drain-source voltage curve and the static drain-source current-drain-source voltage curve of the device to be tested is small, it is determined that the self-heating effect of the device to be tested has a small influence on the electrical characteristics of the device to be tested.
In order to obtain a certain degree of influence, the degree of influence may also be quantified in terms of the magnitude of the difference.
Specifically, the difference between the transient drain-source current-drain-source voltage curve and the static drain-source current-drain-source voltage curve of the device 101 to be tested is compared; based on the difference, the influence of the self-heating effect of the interval to be measured on the electrical characteristics of the interval to be measured is quantitatively analyzed.
And specifically, according to the difference proportion, carrying out quantitative analysis on the influence of the self-heating effect of the device to be tested on the electrical characteristics of the device to be tested.
For example, the reduction ratio of the static drain-source current-drain-source voltage curve to the corresponding current value under the same voltage value in the transient drain-source current-drain-source voltage curve may be determined as the influence value of the self-heating effect of the device 101 to be tested on the electrical characteristics thereof.
One or more technical solutions in the embodiments of the present invention have at least the following technical effects or advantages:
the invention provides an ultrafast pulse testing method, which is applied to an ultrafast pulse testing system and comprises the following steps: applying pulses with gradually increased voltage amplitudes to the device to be tested to obtain a drain-source current value and a drain-source voltage value corresponding to the device to be tested under different pulses, and obtaining a transient drain-source current-drain-source voltage curve and a static drain-source current-drain-source voltage curve of the device to be tested based on the drain-source current value and the drain-source voltage value corresponding to the different pulses; based on the transient drain-source current-drain-source voltage curve and the static drain-source current-drain-source voltage curve, the influence of the self-heating effect of the device to be tested on the electrical characteristics of the device to be tested is determined, and then the influence of the self-heating effect of the semiconductor device on the electrical characteristics of the semiconductor device can be effectively analyzed.
EXAMPLE III
Based on the same inventive concept, an embodiment of the present invention further provides an ultrafast pulse testing apparatus, applied to an ultrafast pulse testing system, as shown in fig. 5, including:
an obtaining module 501, configured to apply pulses with increasing voltage amplitudes to a device to be tested, and obtain drain-source current values and drain-source voltage values of the device to be tested corresponding to different pulses;
an obtaining module 502, configured to obtain a transient drain-source current-drain-source voltage curve and a static drain-source current-drain-source voltage curve of the device to be tested based on the corresponding drain-source current value and drain-source voltage value under the different pulses;
the determining module 503 is configured to determine an influence of a self-heating effect of the device under test on the electrical characteristic of the device under test based on the transient drain-source current-drain-source voltage curve and the static drain-source current-drain-source voltage curve.
In an alternative embodiment, the obtaining module 501 includes:
the first determining unit is used for applying pulses with gradually increased voltage amplitudes to the device to be tested and determining the corresponding voltage amplitude under each pulse based on the pulses with gradually increased voltage amplitudes;
and the obtaining unit is used for obtaining the drain-source current value and the drain-source voltage value of the device to be tested under different pulses through solving conversion based on the voltage amplitude corresponding to the pulse with each voltage amplitude increasing progressively.
In an alternative embodiment, the obtaining module 501 is configured to: applying pulses with gradually increased voltage amplitudes to a device to be tested, wherein each pulse has a preset pulse width, so that the device to be tested is heated to be self-heating stable in a preset pulse width period, and after one pulse is finished, waiting for a preset time length to enable the device to be tested to send the next pulse after being cooled until the working voltage of the device to be tested is reached, and obtaining a drain-source current value and a drain-source voltage value corresponding to the device to be tested under different pulses.
In an alternative embodiment, obtaining module 502 includes:
a first obtaining unit, configured to obtain transient voltage test data and static voltage test data of the device to be tested based on corresponding drain-source current values and drain-source voltage values under different pulses, where the transient voltage test data is test data acquired when no significant self-heating effect occurs in the device to be tested under the pulse action, the static voltage test data is test data acquired when significant self-heating effect occurs in the device to be tested under the pulse action, the non-occurrence significant self-heating effect is within the first 100ns of the pulse, and the occurrence significant self-heating effect is a steady-state period of the pulse;
and the second obtaining unit is used for obtaining a transient drain-source current-drain-source voltage curve and a static drain-source current-drain-source voltage curve of the device to be tested based on the transient voltage test data and the static voltage test data of the device to be tested.
In an optional embodiment, the method further comprises: the characteristic curve obtaining module is used for applying a direct current signal to the device to be tested before applying the voltage amplitude of the voltage amplitude increasing pulse to the device to be tested so as to obtain a direct current voltage characteristic curve of the device to be tested;
further comprising: and the calibration module is used for calibrating the static drain-source current-drain-source voltage curve based on the direct current characteristic curve after obtaining the transient drain-source current-drain-source voltage curve and the static drain-source current-drain-source voltage curve of the device to be tested based on the corresponding drain-source current value and drain-source voltage value under the different voltage amplitude values.
In an alternative embodiment, the determining module 503 includes:
the comparison unit is used for comparing the difference between a transient drain-source current-drain-source voltage curve and a static drain-source current-drain-source voltage curve of the device to be tested;
and the second determining unit is used for carrying out quantitative analysis on the influence of the self-heating effect of the device to be tested on the electrical characteristics of the device to be tested on the basis of the difference.
In an alternative embodiment, the second determination unit is configured to:
and quantitatively analyzing the influence of the self-heating effect of the device to be tested on the electrical characteristics of the device to be tested on the basis of the proportion of the difference.
EXAMPLE III
The invention provides an ultrafast pulse test system, as shown in fig. 1 and 6, comprising:
a control module 11 including a relay set including a first relay 112 and a second relay 113;
the test module 12 includes a pulse test unit including: a waveform generator 110, the waveform generator 110 comprising: an output end; an oscilloscope 111 comprising a first input;
the output end is connected with one end of the device 101 to be tested through the first relay 112, and the first input end is connected with the other end of the device 101 to be tested through the second relay 113.
The control module 11 connects the test module 12 with the device under test 101 through the relay group control, so as to perform the pulse test on the device under test 101 through the pulse test unit.
In a specific embodiment, as shown in fig. 6, the control module 11 further includes: the power supply system comprises an upper computer 115 and a voltage source 114, wherein the voltage source 114 comprises a first relay 112 and a second relay 113, and the voltage source 114 is respectively connected with the upper computer 115, the first relay 112 and the second relay 113 so as to provide power for the upper computer 115, the first relay 112 and the second relay 113.
The test module 12 includes a dc test unit in addition to the pulse test unit.
The control module 11 is configured to control the relay group to implement connection between the pulse test unit and the device 101 to be tested, or connection between the dc test unit and the device 101 to be tested.
The connection relationship between the pulse test unit and the control module 11 is described in detail below:
the waveform generator 110 further includes: a trigger end; the oscilloscope 111 comprises a second input.
The trigger end of the waveform generator 110 is connected with a first input end of an oscilloscope 111 through a first coaxial cable 109; the output end of the waveform generator 110 is connected to the first relay 112 through the second coaxial cable 107; a second input terminal of the oscilloscope 111 is connected to a second relay 113 via a third coaxial cable 108.
Wherein, the outer shell of the third coaxial cable 108 is connected with the grounding end of the oscilloscope 111; the outer shell of the second coaxial cable 107 is connected to the ground of the waveform generator 110.
The connection relationship between the dc test unit and the control module 11 is described in detail as follows:
the direct current test unit comprises: a fourth coaxial cable 116, a semiconductor parameter tester 118, and a fifth coaxial cable 117 connected in this order; the fourth coaxial cable 116 is connected to the first relay 112, and the fifth coaxial cable 117 is connected to the second relay 113.
The outer shell of the fourth coaxial cable 116 and the outer shell of the fifth coaxial cable 117 are both connected to the ground terminal of the semiconductor parameter tester 118.
The control module 11 controls the on/off of the first relay 112 and the second relay 113 to realize a pulse test or a direct current test.
The device under test 101 is specifically connected between a first relay 112 and a second relay 113.
One end of the device under test 101 is connected to the first relay 112 through the sixth coaxial cable 105, and the other end is connected to the second relay 113 through the seventh coaxial cable 106.
The device under test 101 may be a three-electrode MOS device or a four-electrode MOS device. Both MOS devices are metal oxide semiconductors.
Specifically, as shown in fig. 7a and 7b, when the device 101 to be tested is a four-electrode MOS device, the gate electrode 119 of the device 101 to be tested is shorted with the drain electrode 120 to form the signal input electrode 102, and is connected to the first relay 112 through the sixth coaxial cable 105, the source electrode 121 of the device to be tested is shorted with the body electrode 122 to form the signal output electrode 103, and is connected to the second relay 113 through the seventh coaxial cable 106, and the outer shell of the sixth coaxial cable 105 and the outer shell of the seventh coaxial cable 106 are respectively connected to the ground terminal 104 of the device 101 to be tested. Wherein, the gate electrode 119 of the device 101 to be tested is in short circuit with the drain electrode 120, and V is obtained after the primary electrode 121 is in short circuit with the bulk electrode 122 g ＝V d ，V s ＝V b ，V g Is the gate electrode voltage, V d Is the drain electrode voltage, V s Is a source electrode voltage, V b Is the bulk electrode voltage.
As shown in fig. 8a and 8b, when the device under test 101 is a three-electrode MOS device, the gate electrode 125 and the drain electrode 126 of the device under test 101 are shorted to form the signal input electrode 102, and are connected to the first relay 112 through the sixth coaxial cable 105, the source electrode 127 of the device under test is the signal output electrode 103, and is connected to the second relay 113 through the seventh coaxial cable 106, and the outer casing of the sixth coaxial cable 105 and the outer casing of the seventh coaxial cable 106 are respectively connected to the ground terminal 104 of the device under test 101.
The short circuit is any one of the following:
packaging wire bonding, integrated circuit fabrication, and design metal connections and probe connections.
The sixth coaxial cable 105 and the seventh coaxial cable 106 are used here, one end of which is connected to the BNC connector for connecting the test instrument, and the other end of which is connected to the SMA connector for connecting the device under test 101.
In order to ensure the accuracy of the test, all the coaxial cables are coaxially connected, and the characteristic impedance is matched with the internal impedance of the waveform generator 110 and the oscilloscope 111.
The connector in the coaxial cable is specifically any one of the following:
n-connectors, SMA connectors, SMB connectors, SMP connectors, SSMC connectors, MMCX connectors, BNC connectors, TNC connectors, 2.92 rf connectors, and 2.4 rf connectors.
The module under test 101 and the test module are both grounded.
After the test system is connected with the device 101 to be tested, the test is started, the upper computer 115 controls the voltage source 114 to realize channel selection of the first relay 112 and the second relay 113, when the direct current test unit is selected, the upper computer 115 receives and collects a direct current test result of the semiconductor parameter tester 118 on the device 101 to be tested, and displays and stores the direct current test result, wherein the direct current test result is a direct current voltage characteristic curve, namely a current and voltage curve.
Then, the test is switched to a pulse test unit, and the upper computer 115 sets the signal parameter to have nanosecond rising edge, microsecond pulse width and amplitude matched with the working voltage of the device to be tested 101. The storage depth of the oscilloscope 111 is set to be more than 1M, the sampling time interval is set to be less than nanosecond, and the triggering mode is edge triggering and the triggering level is at the position with the amplitude of 1/2.
The upper computer 115 in the control module is used for issuing a test signal and receiving a sampling signal to process, display and store the sampling signal, wherein the sampling signal comprises a first voltage detected by a second input end of the oscilloscope and a second voltage of an output end of the waveform generator; wherein, processing the sampling signal comprises: obtaining the drain-source current I of the device to be tested according to the following formula d And drain-source voltage V d ；
V d ＝2V source -(R 1 +R 2 )·I d
Wherein, V scope Is a first voltage, V source Is a second voltage, R 1 Is the internal resistance of oscilloscope, R 2 Is the internal resistance of the waveform generator.
The upper computer 115 issues signal parameters to the waveform generator 110, so that the waveform generator 110 outputs corresponding pulse voltage to reach the signal input electrode 102 of the device to be tested 101, and meanwhile, the waveform generator 110 outputs a Sync synchronous fixed pulse signal as a test system trigger pulse directly connected to the oscilloscope 111 to drive pulse detection and acquisition. The upper computer 115 receives the acquired pulse test result, and records the pulse test voltage amplitude through the displayed voltage waveform.
For the pulse test by adopting the pulse test unit, when the device does not generate obvious self-heating effect, the first 20ns of the pulse is collected, and the transient drain-source current-drain-source voltage curve of the device to be tested is obtained.
When the device generates a self-heating effect, data of a pulse voltage reaching a steady state stage are collected, and a static drain-source current-drain-source voltage curve of the device to be tested is obtained.
Firstly, calibrating a direct current characteristic curve and a static drain-source current-drain-source voltage curve, comparing a transient drain-source current-drain-source voltage curve with the static drain-source current-drain-source voltage curve when the direct current characteristic curve is consistent with the static drain-source current-drain-source voltage curve, and determining that the self-heating effect of a device to be tested has a large influence on the electrical characteristics of the device to be tested if the transient drain-source current-drain-source voltage curve is greatly different from the static drain-source current-drain-source voltage curve; and if the difference between the transient drain-source current-drain-source voltage curve and the static drain-source current-drain-source voltage curve is smaller, determining that the self-heating effect of the device to be tested has smaller influence on the electrical characteristics of the device to be tested.
In the process of determining the transient drain-source current-drain-source voltage curve and the static drain-source current-drain-source voltage curve of the device to be tested, the determination is performed based on the values of the oscilloscope 111 and the waveform generator 110.
Specifically, in the upper computer 115, the drain-source current I of the device to be tested is obtained according to ohm's law and kirchhoff's law d And drain-source voltage V d Satisfies the following formula:
V d ＝2V source -(R 1 +R 2 )·I d
wherein, V scope Is a first voltage, V, detected at a second input of the oscilloscope 111 source Is the second voltage, R, at the output of the waveform generator 110 1 Is the internal resistance, R, of the oscilloscope 111 2 Is the internal resistance of the waveform generator 110.
Therefore, the transient drain-source current-drain-source voltage curve of the device to be tested obtained in the upper computer 115 and the static drain-source current-drain-source voltage curve of the device to be tested are compared to obtain the influence of the self-heating effect on the electrical characteristics of the device.
One or more technical solutions in the embodiments of the present invention have at least the following technical effects or advantages:
the invention provides an ultrafast pulse test system, comprising: the control module comprises a relay set, wherein the relay set comprises a first relay and a second relay; a test module comprising a pulse test unit, the pulse test unit comprising: a waveform generator including an output; an oscilloscope comprising a first input; the output end is connected with one end of the device to be tested through the first relay, the first input end is connected with the other end of the device to be tested through the second relay, the control module controls the test module to be connected with the device to be tested through the relay group, pulse testing is conducted on the device to be tested through the pulse testing unit, and then the influence of the self-heating effect on the electrical characteristics of the device to be tested can be measured through the ultrafast pulse testing system.
Example four
Based on the same inventive concept, the embodiment of the present invention provides a computer device, as shown in fig. 9, including a memory 904, a processor 902, and a computer program stored on the memory 904 and executable on the processor 902, wherein the processor 502 implements the steps of the ultrafast pulse test method when executing the program.
Where in fig. 9 a bus architecture (represented by bus 900), bus 900 may include any number of interconnected buses and bridges, and bus 900 links together various circuits including one or more processors, represented by processor 902, and memory, represented by memory 904. The bus 900 may also link together various other circuits such as peripherals, voltage regulators, power management circuits, and the like, which are well known in the art, and therefore, will not be described any further herein. A bus interface 906 provides an interface between the bus 900 and the receiver 901 and transmitter 903. The receiver 901 and the transmitter 903 may be the same element, i.e., a transceiver, providing a means for communicating with various other apparatus over a transmission medium. The processor 902 is responsible for managing the bus 900 and general processing, and the memory 904 may be used for storing data used by the processor 902 in performing operations.
EXAMPLE five
Based on the same inventive concept, embodiments of the present invention provide a computer-readable storage medium, on which a computer program is stored, which, when executed by a processor, implements the steps of the ultrafast pulse test method described above.
The algorithms and displays presented herein are not inherently related to any particular computer, virtual machine, or other apparatus. Various general purpose systems may also be used with the teachings herein. The required structure for constructing such a system will be apparent from the description above. Moreover, the present invention is not directed to any particular programming language. It is appreciated that a variety of programming languages may be used to implement the teachings of the present invention as described herein, and any descriptions of specific languages are provided above to disclose the best mode of the invention.
In the description provided herein, numerous specific details are set forth. It is understood, however, that embodiments of the invention may be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the invention, various features of the invention are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various inventive aspects. However, the disclosed method should not be construed to reflect the intent: that the invention as claimed requires more features than are expressly recited in each claim. Rather, as the following claims reflect, inventive aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this invention.
Those skilled in the art will appreciate that the modules in the device in an embodiment may be adaptively changed and disposed in one or more devices different from the embodiment. The modules or units or components of the embodiments may be combined into one module or unit or component, and furthermore they may be divided into a plurality of sub-modules or sub-units or sub-components. All of the features disclosed in this specification (including any accompanying claims, abstract and drawings), and all of the processes or elements of any method or apparatus so disclosed, may be combined in any combination, except combinations where at least some of such features and/or processes or elements are mutually exclusive. Each feature disclosed in this specification (including any accompanying claims, abstract and drawings) may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise.
Moreover, those of skill in the art will appreciate that while some embodiments herein include some features included in other embodiments, not others, combinations of features of different embodiments are meant to be within the scope of the invention and form different embodiments. For example, in the following claims, any of the claimed embodiments may be used in any combination.
The various component embodiments of the invention may be implemented in hardware, or in software modules running on one or more processors, or in a combination thereof. It will be appreciated by those skilled in the art that a microprocessor or Digital Signal Processor (DSP) may be used in practice to implement some or all of the functionality of some or all of the components of an ultrafast pulse testing apparatus, a computer device, according to embodiments of the present invention. The present invention may also be embodied as apparatus or device programs (e.g., computer programs and computer program products) for performing a portion or all of the methods described herein. Such programs implementing the present invention may be stored on computer-readable media or may be in the form of one or more signals. Such a signal may be downloaded from an internet website or provided on a carrier signal or in any other form.
It should be noted that the above-mentioned embodiments illustrate rather than limit the invention, and that those skilled in the art will be able to design alternative embodiments without departing from the scope of the appended claims. In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The invention may be implemented by means of hardware comprising several distinct elements, and by means of a suitably programmed computer. In the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware. The usage of the words first, second and third, etcetera do not indicate any ordering. These words may be interpreted as names.
Claims (20)
1. An ultrafast pulse test method is applied to an ultrafast pulse test system, and is characterized by comprising the following steps:
applying pulses with gradually increased voltage amplitudes to a device to be tested to obtain corresponding drain-source current values and drain-source voltage values of the device to be tested under different pulses;
obtaining a transient drain-source current-drain-source voltage curve and a static drain-source current-drain-source voltage curve of the device to be tested based on the corresponding drain-source current value and drain-source voltage value under the different pulses;
and determining the influence of the self-heating effect of the device to be tested on the electrical characteristics of the device to be tested based on the transient drain-source current-drain-source voltage curve and the static drain-source current-drain-source voltage curve.
2. The method of claim 1, wherein the applying the pulses with the increasing voltage amplitude to the device under test to obtain the drain-source current value and the drain-source voltage value corresponding to the device under test under different pulses comprises:
applying pulses with increasing voltage amplitudes to a device to be tested, and determining a corresponding voltage amplitude under each pulse based on the pulses with increasing voltage amplitudes;
and obtaining the drain-source current value and the drain-source voltage value of the device to be tested under different pulses by solving conversion based on the voltage amplitude corresponding to each pulse with the voltage amplitude increasing progressively.
3. The method of claim 2, wherein the applying the pulses with the increasing voltage amplitude to the device under test to obtain the drain-source current value and the drain-source voltage value corresponding to the device under test under different pulses comprises:
applying pulses with gradually increased voltage amplitudes to a device to be tested, wherein each pulse has a preset pulse width, so that the device to be tested is heated to be self-heating stable in a preset pulse width period, and after one pulse is finished, waiting for a preset time length to enable the device to be tested to send the next pulse after being cooled until the working voltage of the device to be tested is reached, and obtaining a drain-source current value and a drain-source voltage value corresponding to the device to be tested under different pulses.
4. The method of claim 1, wherein obtaining a transient drain-source current-drain-source voltage curve and a static drain-source current-drain-source voltage curve of the device under test based on corresponding drain-source current values and drain-source voltage values under the different pulses comprises:
obtaining transient voltage test data and static voltage test data of the device to be tested based on corresponding drain-source current values and drain-source voltage values under different pulses, wherein the transient voltage test data are test data acquired when the device to be tested does not have an obvious self-heating effect under the action of the pulses, the static voltage test data are test data acquired when the device to be tested has the obvious self-heating effect under the action of the pulses, the non-occurrence obvious self-heating effect is within the first 100ns of the pulses, and the occurrence obvious self-heating effect is in a steady-state period of the pulses;
and obtaining a transient drain-source current-drain-source voltage curve and a static drain-source current-drain-source voltage curve of the device to be tested based on the transient voltage test data and the static voltage test data of the device to be tested.
5. The method of claim 1, further comprising, prior to applying the pulses of increasing voltage amplitude to the device under test:
applying a direct current signal to the device to be tested to obtain a direct current voltage characteristic curve of the device to be tested;
after obtaining a transient drain-source current-drain-source voltage curve and a static drain-source current-drain-source voltage curve of the device to be tested based on the drain-source current value and the drain-source voltage value corresponding to the different voltage amplitudes, the method further comprises the following steps:
and calibrating the static drain-source current-drain-source voltage curve based on the direct current characteristic curve.
6. The method of claim 1, wherein determining the effect of self-heating effects of the device under test on its electrical characteristics based on the transient drain-source current-drain-source voltage curve and the static drain-source current-drain-source voltage curve comprises:
comparing the difference between the transient drain-source current-drain-source voltage curve and the static drain-source current-drain-source voltage curve of the device to be tested;
and determining the influence of the self-heating effect of the device to be tested on the electrical characteristics of the device to be tested based on the difference.
7. The method of claim 6, wherein said determining an effect of self-heating effects of the device under test on its electrical properties based on the differences comprises:
and quantitatively analyzing the influence of the self-heating effect of the device to be tested on the electrical characteristics of the device to be tested on the basis of the proportion of the difference.
8. The utility model provides an ultrafast pulse testing arrangement, is applied to among the ultrafast pulse test system which characterized in that includes:
the acquisition module is used for applying pulses with gradually increased voltage amplitudes to the device to be tested to acquire corresponding drain-source current values and drain-source voltage values of the device to be tested under different pulses;
an obtaining module, configured to obtain a transient drain-source current-drain-source voltage curve and a static drain-source current-drain-source voltage curve of the device to be tested based on the corresponding drain-source current value and drain-source voltage value under the different pulses;
and the determining module is used for determining the influence of the self-heating effect of the device to be tested on the electrical characteristics of the device to be tested based on the transient drain-source current-drain-source voltage curve and the static drain-source current-drain-source voltage curve.
9. An ultrafast pulse test system, comprising:
the control module comprises a relay set, and the relay set comprises a first relay and a second relay;
a test module comprising a pulse test unit, the pulse test unit comprising: a waveform generator; the waveform generator includes: an output end; an oscilloscope comprising a first input;
the output end is connected with one end of a device to be tested through the first relay, and the first input end is connected with the other end of the device to be tested through the second relay.
10. The test system of claim 9, wherein the pulse test unit further comprises: a first coaxial cable, a second coaxial cable, and a third coaxial cable;
the waveform generator further includes: a trigger end;
the oscilloscope includes: a second input terminal;
the triggering end is connected with the second input end through a first coaxial cable;
the output end is connected with the first relay through a second coaxial cable;
the first input end is connected with the second relay through a third coaxial cable.
11. The test system of claim 10, wherein the outer shell of the second coaxial cable is connected to a ground terminal of the waveform generator;
and the shell of the third coaxial cable is connected with the grounding end of the oscilloscope.
12. The test system of claim 9, wherein the test module further comprises:
a DC test unit, the DC test unit comprising: a semiconductor parameter tester;
one end of the semiconductor parameter tester is connected with the first relay through a fourth coaxial cable, and the other end of the semiconductor parameter tester is connected with the second relay through a fifth coaxial cable;
the control module is used for controlling the relay group to realize the connection of the direct current test unit and the device to be tested, or the connection of the pulse test unit and the device to be tested.
13. The test system of claim 12, wherein the outer shell of the fourth coaxial cable and the outer shell of the fifth coaxial cable are each connected to a ground terminal of the semiconductor parametric tester.
14. The test system of claim 9, wherein the control module further comprises:
an upper computer and a voltage source;
the voltage source is respectively connected with the upper computer, the first relay and the second relay;
the upper computer is used for issuing a test signal and receiving a sampling signal so as to process, display and store the sampling signal, wherein the sampling signal comprises a first voltage detected by a second input end of the oscilloscope and a second voltage of an output end of the waveform generator;
the processing the sampling signal includes:
obtaining the drain-source current I of the device to be tested according to the following formula d And drain-source voltage V d ：
V d ＝2V source -(R 1 +R 2 )·I d
Wherein, V scope Is the first voltage, V source Is said second voltage, R 1 Is the internal resistance of the oscilloscope, R 2 Is the internal resistance of the waveform generator.
15. The test system of claim 9, wherein the device under test is embodied as: a three electrode MOS device or a four electrode MOS device.
16. The test system of claim 15, wherein when the device under test is a four-electrode MOS device, a gate electrode and a drain electrode of the device under test are shorted and connected to the first relay through a sixth coaxial cable, and a source electrode and a body electrode of the device under test are shorted and connected to the second relay through a seventh coaxial cable;
and the shell of the sixth coaxial cable and the shell of the seventh coaxial cable are respectively connected with the grounding end of the device to be tested.
17. The test system of claim 15, wherein when the device under test is a three-electrode MOS device, the gate electrode and the drain electrode of the device under test are shorted and connected to the first relay through a sixth coaxial cable, and the source electrode of the device under test is connected to the second relay through the seventh coaxial cable;
and the shell of the sixth coaxial cable and the shell of the seventh coaxial cable are respectively connected with the grounding end of the device to be tested.
18. The test system of claim 16 or 17, wherein the short is any one of:
and designing metal connection and probe connection during packaging and routing connection and integrated circuit manufacturing.
19. A computer device comprising a memory, a processor and a computer program stored on the memory and executable on the processor, characterized in that the processor implements the method steps of any of claims 1-7 when executing the program.
20. A computer-readable storage medium, on which a computer program is stored which, when being executed by a processor, carries out the method steps of any one of claims 1 to 7.
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