CN115148924A - Display device and manufacturing method thereof - Google Patents
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- CN115148924A CN115148924A CN202110345157.8A CN202110345157A CN115148924A CN 115148924 A CN115148924 A CN 115148924A CN 202110345157 A CN202110345157 A CN 202110345157A CN 115148924 A CN115148924 A CN 115148924A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
The invention discloses a display device and a manufacturing method thereof, wherein the display device comprises: the organic light-emitting diode array comprises an array substrate, an organic light-emitting diode device, a spacing layer and a nanoparticle layer; a spacer layer is formed on the organic light-emitting diode device, a nano particle layer is formed on the spacer layer, the nano particle layer can extract energy in a surface plasma mode of the organic light-emitting diode device and emit light, quantum efficiency of the organic light-emitting diode device is remarkably improved, the problem of energy dissipation such as serious non-radiative transition in the traditional OLED device is solved, and luminous efficiency of the display device is improved.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display device and a manufacturing method of the display device.
Background
Compared with a Liquid Crystal Display (LCD), an Organic Light-Emitting Diode (OLED) Display has the advantages of high color saturation, light weight, thinness, flexibility, and the like, and is highly regarded by the field of Display and illumination.
However, the conventional OLED device often has a serious energy dissipation problem such as non-radiative transition, for example, in a surface plasmon mode, exciton quenching is serious near one side of the metal cathode. The part of energy can not emit light in the form of radiative transition and is often dissipated in the form of heat energy, so that the luminous efficiency of the OLED device is severely limited.
Disclosure of Invention
In some embodiments of the present invention, a display device includes: the organic light-emitting diode array comprises an array substrate, an organic light-emitting diode device, a spacing layer and a nanoparticle layer; a spacer layer is formed on the organic light-emitting diode device, a nano particle layer is formed on the spacer layer, the nano particle layer can extract energy in a surface plasma mode of the organic light-emitting diode device and emit light, quantum efficiency of the organic light-emitting diode device is remarkably improved, the problem of energy dissipation such as serious non-radiative transition in the traditional OLED device is solved, and luminous efficiency of the display device is improved.
In some embodiments of the present invention, an organic light emitting diode device includes: a first electrode, a light-emitting layer, and a second electrode; wherein the distance between the light-emitting layer and the second electrode is less than 20nm. By narrowing the distance between the light emitting layer and the second electrode, energy in the light emitting layer is easily coupled into the surface plasmon mode of the second electrode, thereby enabling the exciton density in the transient state and the steady state of the light emitting layer to be reduced, and suppressing the exciton quenching phenomenon. Therefore, even under high current density, the efficiency roll-off of the device is still low, and the stability of the device is obviously improved.
In some embodiments of the invention, the nanoparticle layer comprises a plurality of irregularly arranged nanoparticles.
In some embodiments of the invention, the material of the nanoparticles is silver or gold.
In some embodiments of the invention, the nanoparticles have a size of 50-100nm.
In some embodiments of the present invention, the spacer layer has a thickness of 20-50nm.
In some embodiments of the present invention, the spacer layer is an organic material layer, and the organic material layer may include acrylic resin, epoxy resin, or silicone resin.
In some embodiments of the present invention, the display device further includes an encapsulation layer, where the encapsulation layer is used to encapsulate the organic light emitting diode device, prevent oxygen or water in the air from causing oxidation corrosion to elements in the organic light emitting diode device, and protect the nanoparticle layer from being damaged.
In some embodiments of the present invention, a method for manufacturing a display device includes: providing an array substrate, wherein the array substrate comprises a substrate and a driving circuit layer, forming a pattern of a first electrode on the driving circuit layer, and cleaning and drying the first electrode; forming a pixel defining layer on each first electrode, and etching the pixel defining layer to form a pattern exposing each first electrode; then forming a functional layer over the first electrode; a second electrode is integrally manufactured on the functional layer by adopting an evaporation method; forming a spacing layer on the second electrode, and drying the spacing layer; and forming a nano particle layer on the spacing layer, and drying the nano particle layer. And finally, manufacturing a first inorganic packaging layer on the nanoparticle layer by adopting an evaporation method, cooling the first inorganic packaging layer, manufacturing an organic buffer layer on the first inorganic packaging layer by adopting a spin coating method or an ink-jet printing method, drying the organic buffer layer, and manufacturing a second inorganic packaging layer on the organic buffer layer by adopting the evaporation method, thereby completing the manufacturing of the display panel.
In some embodiments of the present invention, the spacer layer is fabricated by a spin coating method, and the nanoparticle layer is fabricated by a spin coating method.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments of the present invention will be briefly described below, and it is obvious that the drawings described below are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic partial cross-sectional structural view of a transparent display device according to an embodiment of the present invention;
fig. 2 is a schematic partial cross-sectional structure diagram of a driving circuit layer according to an embodiment of the present invention;
fig. 3 is a schematic flow chart illustrating a manufacturing method of a display device according to an embodiment of the invention;
fig. 4a to fig. 4e are schematic cross-sectional structure diagrams corresponding to steps of a manufacturing method of a display device according to an embodiment of the present invention.
11-substrate, 12-organic light emitting diode device, 13-spacer layer, 14-nanoparticle layer, 15-encapsulation layer, 20-pixel defining layer, 111-substrate, 112-driving circuit layer, 121-functional layer, 151-first inorganic encapsulation layer, 152-organic buffer layer, 153-second inorganic encapsulation layer, 1121-gate metal layer, 1122-gate insulating layer, 1123-active layer, 1124-source drain metal layer, 1125-planarization layer, 1211-hole injection layer, 1212-hole transport layer, 1213-light emitting layer, 1214-electron transport layer, 1215-electron injection layer, e 1-first electrode, e 2-second electrode, S-source electrode, G-gate electrode, D-drain electrode, p-fixed potential signal line.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, the present invention is further described with reference to the accompanying drawings and examples. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their repetitive description will be omitted. The words expressing the position and direction described in the present invention are illustrated in the accompanying drawings, but may be changed as required and still be within the scope of the present invention. The drawings of the present invention are for illustrative purposes only and do not represent true scale.
The OLED display device has the advantages of being light and thin, high in brightness, low in power consumption, fast in response, high in definition, good in flexibility, high in luminous efficiency and the like, and occupies an increasingly important position in the display field.
The light emitting device in the OLED display device is an OLED device. The OLED device includes an anode, a light emitting layer, and a cathode. After a signal is applied to the anode and the cathode, and an electric field is generated between the anode and the cathode, electrons and holes move to the light emitting layer and are combined into excitons in the light emitting layer, and the excitons excite light emitting molecules to finally generate visible light.
Fig. 1 is a schematic partial cross-sectional view of a display device according to an embodiment of the present invention.
Referring to fig. 1, the display device includes: an array substrate 11, an organic light emitting diode device 12, a spacer layer 13, a nanoparticle layer 14, and an encapsulation layer 15.
The array substrate 11 includes: a substrate base 111 and a drive line layer 112.
The substrate 111 is located at the bottom of the display device and has a bearing function. The shape of the base substrate 111 is rectangular or square, including the top side, the ground side, the left side, and the right side. Wherein the antenna side is opposite to the ground side, the left side is opposite to the right side, the antenna side is connected with one end of the left side and one side of the right side respectively, and the ground side is connected with the other end of the left side and the other end of the right side respectively.
The size of the substrate base 111 is adapted to the size of the display device, and usually, the size of the substrate base 111 is slightly smaller than the size of the display device.
In the embodiment of the invention, the substrate 111 is made of glass, and the substrate 111 is made of glass with high thermal conductivity coefficient, so that heat generated by the display device during display can be quickly dissipated, and the problem of reduction of luminous efficiency caused by overhigh temperature is avoided.
The driving line layer 112 is located on the substrate 111, and the driving line layer 112 includes a driving element for driving the organic light emitting diode device 12 to emit light and a signal line. The driving line layer 112 provided in the embodiment of the present invention may be prepared by using a Thin Film Transistor (TFT) manufacturing process.
The driving line layer 112 is composed of a plurality of metal layers and insulating layers, and a circuit composed of driving elements such as thin film transistors, capacitors, and resistors having a specific connection relationship is formed by patterning the metal layers and the insulating layers. After the driving circuit layer 112 is electrically connected to the organic light emitting diode device 12, a driving signal may be provided to the organic light emitting diode device 12 from the driving circuit layer 112 to control the organic light emitting diode device 12 to emit light.
Fig. 2 is a schematic partial cross-sectional structure diagram of a driving circuit layer according to an embodiment of the present invention.
Referring to fig. 2, the driving line layer 112 includes: a gate metal layer 1121, a gate insulating layer 1122, an active layer 1123, a source drain metal layer 1124, a planarization layer 1125, and a connection electrode e.
The gate metal layer 1121 is located on the substrate 111. The gate metal layer 1121 has a pattern including a gate G and a gate line.
The gate metal layer 1121 may be a single-layer or multi-layer metal of gold (Au), silver (Ag), copper (Cu), nickel (Ni), platinum (Pt), aluminum (Al), molybdenum (Mo), or chromium (Cr), or may also be a metal layer of aluminum (Al): neodymium (Nd) alloy, molybdenum (Mo): tungsten (W) alloy.
The pattern of the gate metal layer 1121 may be formed using a one-step patterning process.
The gate insulating layer 1122 is located on a surface of the gate metal layer 1121 on a side away from the substrate 111. The gate insulating layer 1122 serves to insulate the gate metal layer 1121, so that another metal layer may be further formed on the gate insulating layer 1122.
The gate insulating layer 1122 may be an inorganic layer of silicon oxide, silicon nitride, or metal oxide, and may include a single layer or multiple layers.
The active layer 1123 is located on the surface of the gate insulating layer 1122 on the side away from the gate metal layer 1121. The active layer 1123 includes a source region and a drain region formed by doping N-type impurity ions or P-type impurity ions. The region between the source region and the drain region is a channel region a that is not doped.
The active layer 1123 may be made of amorphous silicon or polycrystalline silicon, and the polycrystalline silicon may be formed by crystallization of amorphous silicon.
The source drain metal layer 1124 is located on a surface of the active layer 1123 on a side facing away from the gate insulating layer 1122. The source-drain metal layer 1124 has a pattern including a source S, a drain D, a data line, and a fixed potential signal line P.
Source drain metal layer 1124 may be a single layer or multiple layers of gold (Au), silver (Ag), copper (Cu), or aluminum (Al), or may be a metal layer of aluminum (Al): copper (Cu) alloy.
The patterns of the active layer 1123 and the source-drain metal layer 1124 may be formed by a one-step patterning process; alternatively, the patterns of the active layer 1123 and the source drain metal layer 1124 may be patterned separately.
The gate electrode G, the active layer 1123, the source electrode S, and the drain electrode D constitute a thin film transistor.
The planarization layer 1125 is located on the surface of the active layer 1123 and the source drain metal layer 1124 on the side facing away from the gate insulating layer 1122. The planarization layer 1125 serves to insulate the active layer 1123 from the source drain metal layer 1124 and planarize the surface of the film layer to facilitate the formation of other devices on the planarization layer 1125.
The planarization layer 1125 may be made of SiN X /SiO X And the like, and the pattern of the via hole in the flat layer 1125 for exposing the drain electrode D in the source-drain metal layer is formed by adopting a one-step composition process.
As shown in fig. 1, the organic light emitting diode device 12 includes: a first electrode e1, a functional layer 121, and a second electrode e2.
The first electrodes e1 are disposed on the driving circuit layer 112, and an area where each first electrode e1 is disposed corresponds to an area where one organic light emitting diode device 12 is disposed. The first electrode e1 is electrically connected to the drain D of the driving circuit layer 112 through the via hole of the planarization layer, and is used for transmitting a driving signal provided by the driving circuit layer 112 to the organic light emitting diode device 12, so as to control the driving current of the organic light emitting diode device 12, and thus control the light emitting brightness of the organic light emitting diode device 12.
The first electrode e1 provided by the embodiment of the invention is made of a transparent conductive material indium tin oxide.
The pixel defining layer 20 is positioned at spaced positions of the respective first electrodes e1, and the thickness of the pixel defining layer 20 is greater than that of the first electrodes e1, thereby defining positions of the respective organic light emitting diode devices.
The functional layer 121 is disposed on the first electrode e1 defined by the pixel defining layer 20. The functional layer 121 provided by the embodiment of the present invention may include a hole injection layer 1211, a hole transport layer 1212, a light emitting layer 1213, an electron transport layer 1214, and an electron injection layer 1215, wherein the light emitting layer 1213 emits light of a specific color under the control of a driving signal.
The second electrode e2 is located on the functional layer 121, and the second electrode e2 is disposed in a whole layer and made of silver.
In the current organic light emitting diode display device, the first electrode e1 is generally an anode, and the second electrode e2 is generally a cathode.
At present, the conventional OLED device often has a serious energy dissipation problem such as non-radiative transition, for example, in the surface plasmon mode, there is a serious exciton quenching near the metal cathode (second electrode e 2). The part of energy can not emit light in the form of radiative transition and is often dissipated in the form of heat energy, so that the luminous efficiency of the OLED device is severely limited. Meanwhile, the heat energy accumulation causes the heat dissipation problem of the OLED device. In addition, the thermal stability of organic molecules in OLEDs is generally less than that of inorganic molecules, and thermal energy can accelerate the aging of OLED devices.
In view of this, in the display device provided in the embodiment of the invention, the spacer layer 13 is formed on the second electrode e2, and the nanoparticle layer 14 is formed on the spacer layer 13, so that the nanoparticle layer 14 can extract energy in a surface plasma mode of the organic light emitting diode device 12 and emit light, the quantum efficiency of the organic light emitting diode device 12 is significantly improved, the energy dissipation problems such as a relatively serious non-radiative transition and the like in the conventional OLED device are avoided, and the light emitting efficiency of the display device is improved.
The spacer layer 13 is located on the second electrode e2, and has the same shape and size as the second electrode e2, the thickness of the spacer layer 13 is in the range of 20-50nm, in the embodiment of the present invention, the spacer layer 13 is an organic material layer, and the organic material layer may include acrylic resin, epoxy resin, or silicone resin, which is not limited herein.
A nanoparticle layer 14, wherein the nanoparticle layer 14 is positioned on the spacing layer 13, and the shape and the size of the nanoparticle layer 14 are the same as those of the spacing layer 13; wherein the nanoparticle layer 14 includes a plurality of irregularly arranged nanoparticles, which in the present embodiment range in size from 50 to 100nm.
The nano particles provided by the embodiment of the invention are made of silver or gold.
The encapsulation layer 15 is located on the surface of the nanoparticle layer 14 on the side away from the spacer layer 13, and the encapsulation layer 15 is used for encapsulating the organic light emitting diode device 12, preventing oxygen or water in the air from causing oxidation corrosion to elements in the organic light emitting diode device 12, and protecting the nanoparticle layer 14 from being damaged.
In the embodiment of the invention, the encapsulation layer 15 is a stacked structure and includes, from bottom to top, a first inorganic encapsulation layer 151, an organic buffer layer 152 and a second inorganic encapsulation layer 153.
In the specific implementation, the material used for the spacer layer 13 is the same as the material used for the organic buffer layer 152, so that the spacer layer 13 can be manufactured on the basis of the original process without introducing new materials and processes.
At present, in the conventional organic light emitting diode device, in the absence of the nanoparticle layer 14, excited state energy in the light emitting layer 1213 is coupled into a surface plasmon mode near the cathode (second electrode e 2), which results in severe exciton quenching near the metal cathode (second electrode e 2), and this energy cannot emit light in the form of radiative transition and is dissipated as heat energy. In order to avoid the above problem, the light-emitting layer 1210 is often disposed away from the cathode (second electrode e 2) interface, but the excited state energy in such a disposition of the light-emitting layer 1213 cannot be fully utilized.
The nanoparticle layer 14 is provided in the display device, and the nanoparticle layer 14 can extract energy in the surface plasmon mode of the organic light emitting diode device 12 and emit light, so that the embodiment of the invention can reduce the distance between the light emitting layer 1213 and the second electrode e2 by using the surface plasmon mode, and thus, the energy in the light emitting layer 1213 is easily coupled to the surface plasmon mode of the second electrode e2, thereby reducing exciton density in the transient state and the steady state of the light emitting layer and suppressing exciton quenching phenomenon. Therefore, even under high current density, the efficiency roll-off of the device is still low, and the stability of the device is obviously improved.
In the embodiment of the present invention, the distance between the light emitting layer 1213 and the second electrode e2 can be shortened by increasing the thicknesses of the hole injection layer 1211 and the hole transport layer 1212 and decreasing the thicknesses of the electron transport layer 1214 and the electron injection layer 1215, thereby making full use of the surface plasmon mode and improving the display efficiency of the display device.
The distance between the light-emitting layer 1210 and the second electrode e2 provided by the embodiment of the invention is less than 20nm.
In another aspect of the embodiments of the present invention, a method for manufacturing a display device is provided. Fig. 3 is a schematic flow chart illustrating a manufacturing method of a display device according to an embodiment of the present invention.
Referring to fig. 3, a method for manufacturing a display device according to an embodiment of the present invention includes:
s10, providing an array substrate;
s20, forming an organic light-emitting diode device on the array substrate;
s30, forming a spacing layer on one side of the organic light-emitting diode device, which is far away from the array substrate;
s40, forming a nanoparticle layer on one side of the spacing layer, which is far away from the organic light-emitting diode device;
and S50, forming a packaging layer on one side of the nanoparticle layer, which is far away from the spacing layer.
Fig. 4a to fig. 4e are schematic cross-sectional structure diagrams corresponding to steps of a manufacturing method of a display device according to an embodiment of the present invention.
Referring to fig. 4a, an array substrate 11 is provided, the array substrate 11 includes a substrate 111 and a driving circuit layer 112, a pattern of a first electrode e1 is formed on the driving circuit layer 112, and the first electrode e1 is cleaned and dried.
The first electrode e1 may be made of a transparent conductive material.
Referring to fig. 4b, a pixel defining layer 20 is formed over each of the first electrodes e1, and the pixel defining layer 20 is etched to form a pattern exposing each of the first electrodes e 1.
The pixel defining layer 20 may be made of a photoresist material.
Functional layers including a hole injection layer 1211, a hole transport layer 1212, a light emitting layer 1213, an electron transport layer 1214, and an electron injection layer 1215 are formed over the first electrode e 1.
The functional layer may be formed by evaporation, and when the FMM process is used, the light emitting layer 1213 may be formed of different materials for emitting different colors of light. When applied to a white organic light emitting diode display device, the light emitting layer 1213 may be formed on each of the first electrode e1 and the pixel defining layer 20 in a single layer using the same material.
Referring to fig. 4c, a second electrode e2 is formed on the electron injection layer 1215 by evaporation.
The second electrode e2 may be made of metallic silver.
In the embodiment of the present invention, the distance between the light-emitting layer 1213 and the second electrode e2 is less than 20nm.
Referring to fig. 4d, after the second electrode e2 is formed by vapor deposition, the spacer layer 13 is formed on the second electrode e2 by spin coating, and the spacer layer 13 is dried.
Referring to fig. 4e, the nanoparticle layer 14 is formed on the spacer layer 13 by spin coating, and the nanoparticle layer 14 is dried.
Finally, the first inorganic encapsulating layer 151 is formed on the nanoparticle layer 14 by an evaporation method, the first inorganic encapsulating layer 151 is cooled, the organic buffer layer 152 is formed on the first inorganic encapsulating layer 151 by a spin coating method or an inkjet printing method, the organic buffer layer 152 is dried, and the second inorganic encapsulating layer 153 is formed on the organic buffer layer 152 by an evaporation method, thereby completing the display panel shown in fig. 1.
The nanoparticle layer 14 provided by the embodiment of the invention can extract energy in a surface plasma mode of the organic light-emitting diode device and emit light, so that the quantum efficiency of the organic light-emitting diode device is remarkably improved, the problem of energy dissipation such as relatively serious non-radiative transition in the traditional OLED device is solved, and the light-emitting efficiency of the display device is improved.
According to the first invention concept, a spacer layer is formed on the second electrode, a nanoparticle layer is formed on the spacer layer, and the nanoparticle layer can extract energy in a surface plasma mode of the organic light-emitting diode device and emit light, so that the quantum efficiency of the organic light-emitting diode device is remarkably improved, the problem of energy dissipation such as serious non-radiative transition in the traditional OLED device is solved, and the luminous efficiency of the display device is improved.
According to the second inventive concept, the distance between the light emitting layer and the second electrode is reduced, so that energy in the light emitting layer is easily coupled into a surface plasmon mode of the second electrode, thereby allowing exciton density to be reduced in transient and steady states of the light emitting layer, and suppressing an exciton quenching phenomenon. Therefore, even under high current density, the efficiency roll-off of the device is still low, and the stability of the device is obviously improved.
According to the third inventive concept, the distance between the light emitting layer and the second electrode is shortened by increasing the thicknesses of the hole injection layer and the hole transport layer and decreasing the thicknesses of the electron transport layer and the electron injection layer, thereby making full use of the surface plasmon mode and improving the display efficiency of the display device.
According to the fourth inventive concept, the distance between the light emitting layer and the second electrode is less than 20nm.
According to the fifth inventive concept, the encapsulation layer serves to encapsulate the organic light emitting diode device, prevent oxygen or water in the air from causing oxidative corrosion to elements in the organic light emitting diode device, and protect the nanoparticle layer from being damaged.
According to a sixth inventive concept, a method of manufacturing a display device includes: providing an array substrate, wherein the array substrate comprises a substrate and a driving circuit layer, forming a pattern of a first electrode on the driving circuit layer, and cleaning and drying the first electrode; forming a pixel defining layer on each first electrode, and etching the pixel defining layer to form a pattern exposing each first electrode; then forming a functional layer over the first electrode; a second electrode is integrally manufactured on the functional layer by adopting an evaporation method; manufacturing a spacing layer on the second electrode by adopting a spin coating method, and drying the spacing layer; and then, manufacturing a nano particle layer on the spacing layer by adopting a spin coating method, and drying the nano particle layer. And finally, manufacturing a first inorganic packaging layer on the nanoparticle layer by adopting an evaporation method, cooling the first inorganic packaging layer, manufacturing an organic buffer layer on the first inorganic packaging layer by adopting a spin coating method or an ink-jet printing method, drying the organic buffer layer, and manufacturing a second inorganic packaging layer on the organic buffer layer by adopting the evaporation method, thereby completing the manufacturing of the display panel.
According to the seventh invention concept, the substrate is made of glass, and the glass with higher thermal conductivity is used for manufacturing the substrate, so that heat generated by the display device during displaying can be quickly dissipated, the problem of reduction of luminous efficiency caused by overhigh temperature is avoided, and in addition, the surface of the glass substrate is smooth and flat, thereby being beneficial to later-stage processing and manufacturing.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. A display device, comprising:
the array substrate is used for providing a driving signal;
an organic light emitting diode device located on the array substrate;
the spacing layer is positioned on one side, away from the array substrate, of the organic light-emitting diode device;
a nanoparticle layer on a side of the spacer layer facing away from the organic light emitting diode device; the nanoparticle layer is for improving quantum efficiency of the organic light emitting diode device.
2. The display apparatus of claim 1, wherein the organic light emitting diode device comprises:
the first electrode is positioned on the array substrate;
the light-emitting layer is positioned on one side, away from the array substrate, of the first electrode;
the second electrode is positioned on one side of the light-emitting layer, which is far away from the first electrode;
wherein a distance between the light emitting layer and the second electrode is less than 20nm.
3. The display device of claim 1, wherein the nanoparticle layer comprises a plurality of irregularly arranged nanoparticles.
4. The display device of claim 3, wherein the material of the nanoparticles is silver or gold.
5. The display device of claim 4, wherein the nanoparticles have a size of 50-100nm.
6. The display device according to any one of claims 1 to 5, wherein the spacer layer has a thickness of 20 to 50nm.
7. The display device of claim 6, wherein the material of the spacer layer is one of acrylic, epoxy, or silicone.
8. The display device according to any one of claims 1 to 5, further comprising:
an encapsulation layer on a side of the nanoparticle layer facing away from the spacer layer.
9. A method for manufacturing a display device, comprising:
providing an array substrate;
forming an organic light emitting diode device on the array substrate;
forming a spacing layer on one side of the organic light-emitting diode device, which is far away from the array substrate;
forming a nanoparticle layer on a side of the spacer layer facing away from the organic light emitting diode device;
an encapsulation layer is formed on a side of the nanoparticle layer facing away from the spacer layer.
10. The method of claim 9, wherein the spacer layer is formed by spin coating;
the nanoparticle layer is fabricated by a spin-coating method.
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| CN202110345157.8A CN115148924A (en) | 2021-03-31 | 2021-03-31 | Display device and manufacturing method thereof |
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