CN115148749A - Reflecting panel and preparation method thereof - Google Patents
Reflecting panel and preparation method thereof Download PDFInfo
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- CN115148749A CN115148749A CN202110347690.8A CN202110347690A CN115148749A CN 115148749 A CN115148749 A CN 115148749A CN 202110347690 A CN202110347690 A CN 202110347690A CN 115148749 A CN115148749 A CN 115148749A
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- H—ELECTRICITY
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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Abstract
The application discloses reflection panel and manufacturing method thereof, wherein, reflection panel includes: a substrate; and a plurality of optoelectronic structure units located on the substrate, each of the plurality of optoelectronic structure units capable of producing an optoelectronic effect for light of a particular frequency; when the reflection panel is irradiated by light with a specific frequency, the electromagnetic performance of the reflection panel is changed due to the photoelectric effect generated by the plurality of photoelectric structure units.
Description
Technical Field
The application relates to the technical field of metamaterials, in particular to an intelligent reflection panel based on light-operated response and a preparation method thereof.
Background
A super-surface is a surface structure with extraordinary physical properties, which are reflected in electromagnetic properties. The electromagnetic performance of the super surface can be regulated, and the super surface capable of regulating the electromagnetic performance is also called an intelligent reflecting surface.
At present, an electric control mode is adopted for regulating and controlling the electromagnetic performance of the super surface, and the super surface is also called an electric control intelligent reflecting surface. Specifically, the super-surface is provided with adjustable components (such as a variable capacitor, a switching diode and the like), and the adjustable components on the super-surface are regulated and controlled in an electric control mode (such as changing the size of the capacitor, controlling the on-off of the diode and the like), so that the electromagnetic performance of the super-surface is regulated and controlled. However, there is a feed requirement for the adjustable components on the super surface to be controlled in an electrically controlled manner. In the practical application process, the erection point of the super-surface can not necessarily meet the requirement of the super-surface on feeding, and a brand-new control mechanism is needed to realize the regulation and control of the electromagnetic property of the super-surface.
Disclosure of Invention
In order to solve the above technical problem, embodiments of the present application provide a reflective panel and a method for manufacturing the same.
The embodiment of the application provides a reflecting panel, includes:
a substrate; and the number of the first and second groups,
a plurality of optoelectronic building blocks located on the substrate, each of the plurality of optoelectronic building blocks capable of producing an optoelectronic effect for light of a particular frequency;
when the reflection panel is irradiated by light with a specific frequency, the electromagnetic performance of the reflection panel is changed due to the photoelectric effect generated by the plurality of photoelectric structure units.
In some optional embodiments of the present application, the substrate has a plurality of groove structures, and the plurality of groove structures correspond to the plurality of optoelectronic structure units one to one, wherein one optoelectronic structure unit is located in one groove structure.
In some alternative embodiments of the present application, the optoelectronic building block comprises:
a semiconductor layer overlying the substrate; and the number of the first and second groups,
a metal layer overlying the semiconductor layer.
In some alternative embodiments of the present application, the semiconductor layer is a doped zinc oxide thin film.
In some alternative embodiments of the present application, the metal layer is a silver nanowire film.
In some optional embodiments of the present application, the metal layer is a transparent metal layer.
In some alternative embodiments of the present application, the substrate is a transparent substrate.
In some alternative embodiments of the present application, the plurality of photovoltaic building units are periodically distributed on the substrate.
The preparation method of the reflecting panel provided by the embodiment of the application comprises the following steps:
obtaining a substrate;
etching a plurality of groove structures on the substrate;
manufacturing a plurality of photoelectric structure units in the groove structures to obtain a reflecting panel;
wherein each optoelectronic structure unit of the plurality of optoelectronic structure units is capable of producing an optoelectronic effect for light of a particular frequency.
In some optional embodiments of the present application, before the etching the plurality of groove structures on the substrate, the method further includes: covering a layer of mask on the substrate;
the etching of the plurality of groove structures on the substrate includes: and etching a plurality of groove structures on the substrate covered with the mask.
In some optional embodiments of the present application, after the etching the plurality of groove structures on the substrate covered with the mask, the method further includes:
and (3) placing the substrate with the plurality of groove structures in an acid solution, and cleaning the substrate by using ultrasound.
In some optional embodiments of the present application, the fabricating a plurality of optoelectronic structure units in the plurality of groove structures includes:
preparing a semiconductor dispersion liquid and a metal dispersion liquid;
sequentially spraying the semiconductor dispersion liquid and the metal dispersion liquid on the substrate with the plurality of groove structures;
forming a semiconductor layer after the semiconductor dispersion liquid is air-dried, forming a metal layer after the metal dispersion liquid is air-dried, wherein the semiconductor layer covers the substrate, and the metal layer covers the semiconductor layer; the semiconductor layer and the metal layer in each groove structure form a photoelectric structure unit, and a plurality of photoelectric structure units are formed in the groove structures.
In some alternative embodiments of the present application, the semiconductor layer is a doped zinc oxide thin film, and the preparing the semiconductor dispersion comprises:
pouring doping substances of zinc salt and metal salt into the aqueous solution, adding a coupling agent, and stirring and mixing to obtain a precursor;
preparing the precursor into doped zinc oxide powder by a solvothermal method;
and dispersing the doped zinc oxide powder in an aqueous solution to obtain a doped zinc oxide dispersion.
In some optional embodiments of the present application, the metal layer is a silver nanowire film, and the preparing of the metal dispersion comprises:
and dispersing the silver nanowires in an aqueous solution to obtain a silver nanowire dispersion liquid.
In some optional embodiments of the present application, after fabricating a plurality of optoelectronic structure units in the plurality of groove structures, the method further includes:
and annealing the substrate with the plurality of photoelectric structure units to decompose the mask on the surface of the substrate.
In some alternative embodiments of the present application, the substrate is a transparent substrate.
In the technical scheme of the embodiment of the application, a reflection panel based on a brand-new regulation and control mechanism, namely an intelligent reflection panel based on light control response (referred to as a light control intelligent reflection panel for short), is provided, wherein the reflection panel comprises a substrate and a plurality of photoelectric structure units positioned on the substrate, and when light with specific frequency irradiates the reflection panel, the plurality of photoelectric structure units can generate a photoelectric effect, so that the electromagnetic performance of the reflection panel is changed. Because the electromagnetic performance of the reflecting panel is regulated and controlled in a light-operated mode, no feed requirement exists, and no feed circuit needs to be arranged on the reflecting panel.
Drawings
FIG. 1 is a pictorial view of an electrically controlled intelligent reflective surface;
FIG. 2 is a schematic diagram of structural elements in an electronically controlled smart reflective surface;
FIG. 3 is a flow chart of the fabrication of an electronically controlled intelligent reflective surface;
fig. 4 is a first schematic structural diagram of a reflective panel according to an embodiment of the present disclosure;
FIG. 5 is a side view of an optoelectronic structure unit provided by an embodiment of the present application embedded on a substrate;
FIG. 6 is a schematic diagram of the structure of an optoelectronic unit provided in the embodiments of the present application;
fig. 7 is a first view of an illumination scene of the optoelectronic structure unit provided in the embodiment of the present application;
fig. 8 is a schematic view of an illumination scene two of the photoelectric structure unit provided in the embodiment of the present application;
fig. 9 is a schematic view three of an illumination scene of the photoelectric structure unit provided in the embodiment of the present application;
fig. 10 is a schematic structural diagram of a second reflective panel according to an embodiment of the present application;
fig. 11 is a first schematic flow chart of a method for manufacturing a reflective panel according to an embodiment of the present disclosure;
fig. 12 is a second schematic flow chart of a manufacturing method of a reflective panel according to an embodiment of the present application.
Detailed Description
Exemplary embodiments disclosed in the present application will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present application are shown in the drawings, it should be understood that the present application may be embodied in various forms and should not be limited to the specific embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present application. It will be apparent, however, to one skilled in the art, that the present application may be practiced without one or more of these specific details. In other instances, well-known features have not been described in order to avoid obscuring the present application; that is, not all features of an actual embodiment are described herein, and well-known functions and constructions are not described in detail.
In the drawings, the size of layers, regions, elements, and relative sizes may be exaggerated for clarity. Like reference numerals refer to like elements throughout.
It will be understood that when an element or layer is referred to as being "on" \8230; \8230 ";," - \8230;, "\8230"; "adjacent to," "connected to," or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to, or coupled to the other elements or layers, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," 8230; \8230 ";," "directly adjacent," "directly connected to," or "directly coupled to" another element or layer, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present application. And the discussion of a second element, component, region, layer or section does not imply that a first element, component, region, layer or section is necessarily present in the application.
Spatial relationship terms such as "at 8230," "below," "at 8230," "below," "at 8230," "above," and the like may be used herein for convenience of description to describe the relationship of one element or feature to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "at 8230; \8230; below" and "at 8230; \8230; below" may include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
In order to facilitate understanding of the technical solutions of the embodiments of the present application, the following description will first describe the related art of the embodiments of the present application.
Ever, the ever-increasing dream of people is that electromagnetic waves can be regulated and controlled at will, and the appearance of maxwell equations enables the control capability of human beings on electromagnetic waves to be rapidly increased. However, in the current wireless network, the wireless signal is absorbed by an object in a transmission environment and naturally diffused by a signal in a space in the process of reaching a receiving end from a transmitting end, so that the wireless signal is attenuated and scattered to a certain degree, and the computational complexity of the receiving end for recovering the signal is increased and the performance is reduced. Therefore, due to the limitation of uncontrollable wireless channel environment, in the research and design process of various traditional mobile communication systems, various wireless channel environments can only be passively measured and modeled, and then transmitters and receivers are elaborately designed on the basis to counteract the adverse effects of wireless channels or optimize the design of the wireless communication system by utilizing the characteristics of the transmitters and the receivers. However, such solutions are time-consuming and labor-consuming, for example, in 5G networks and future 6G mobile networks, which have implemented a substantial increase in network capacity and multi-device real-time connection, in order to implement efficient and stable transmission of wireless signals, ultra-dense network key technologies are not required, but the problems of high hardware cost, high complexity, high energy consumption and the like are also difficult to avoid. In an actual scenario, for example, for a user in a macro station coverage dead angle and a cell edge user, it is usually necessary to erect a repeater and a repeater in an area where a direct link between the user and a serving base station is seriously blocked by a barrier, so as to implement functions of increasing coverage, supplementing blind, and the like.
Up to the advent of the super-surface, the possibility of implementing changes and control of the wireless channel environment. By constructing a periodically arranged array of metals or dielectrics and structurally ordering them on a critical physical scale, surface structures with extraordinary physical properties, i.e. hypersurfaces, can be prepared. The electromagnetic parameters of the super-surface determine the electromagnetic performance thereof, and depend on the resonance characteristics of the basic constitutional units (called structural units) of the super-surface, so that the dielectric constant epsilon and the magnetic permeability mu can be negative. Once the structure of the super-surface is designed and fabricated, its electromagnetic properties are fixed. With the development of the super-surface technology, it is proposed that the super-surface structure unit can be equivalent to an RLC circuit, adjustable components (such as variable capacitors, switching diodes and the like) are added into the equivalent circuit, and the electromagnetic performance of each structure unit is changed by adjusting the performance of the adjustable components. The super-surface added with the adjustable component is also called an intelligent reflecting surface based on electric control response (referred to as an electric control intelligent reflecting surface for short), as shown in fig. 1 and fig. 2, fig. 1 is a physical diagram of an electric control intelligent reflecting surface, and fig. 2 is a schematic diagram of a structural unit in the electric control intelligent reflecting surface.
The super-surface added with the adjustable component can present unconventional physical phenomena such as negative refraction, wave absorption, focusing, unconventional reflection and the like. This realized the super surface of controlling in real time to the electromagnetic wave, because of it can realize overcoming the negative effects of natural wireless propagation environment through the electromagnetic characteristic of active control electromagnetic wave to improve the channel environment by a wide margin, and then realize promoting communication performance's target, realized the special potentiality of intelligent electromagnetic environment and attracted the extensive concern in academic and industrial circles.
As for the electrically controlled intelligent reflecting surface, the manufacturing flow chart thereof is shown in fig. 3, and the method substantially comprises the following steps:
step 301: a Printed Circuit Board (PCB) with a super-surface structure is prepared by covering a photopolymerized or photolyzed dry film, namely a Circuit film, of a super-surface structure unit on a copper-clad plate of a paper base, glass cloth or synthetic fiber, and carrying out a series of operations such as exposure, demolding and the like.
Step 302: and (3) attaching adjustable components such as PIN diodes, variable capacitance diodes, variable capacitors and the like on the PCB according to design requirements by combining Surface Mount Technology (SMT).
Step 303: and (5) connecting a feed network to complete the manufacturing of the electric control intelligent reflecting surface.
The electric control intelligent reflecting surface can realize real-time control on electromagnetic waves, and benefits from the adjustable electromagnetic property of each structural unit on the panel. In the electric control intelligent reflecting surface, the change of the electromagnetic property in each structural unit is derived from the regulation and control of an adjustable component, such as the change of the size of a capacitor, the on-off of a control diode and the like, and obviously, the electric control intelligent reflecting surface has the feed requirement. However, in the practical application process, the erection point of the electrically-controlled intelligent reflecting surface does not necessarily meet the requirement of the electrically-controlled intelligent reflecting surface on feeding, so that a brand-new control mechanism is needed to realize the regulation and control of the electromagnetic property of the super surface; in addition, in some specific scenes, for example, the intelligent reflecting surface is additionally arranged on the glass wall of a high-rise building or the glass of an automobile, so that the transparency of the panel is higher, and if the intelligent reflecting surface has the transparency characteristic, the intelligent reflecting surface is more easily accepted by customers. Obviously, the existing intelligent reflecting surface has difficulty in realizing the application requirements.
Therefore, the following technical scheme of the embodiment of the application is provided. It should be noted that "reflective panel" described in the embodiments of the present application may also be understood as "reflective surface" or "reflective surface panel", that is, the description about "reflective panel" may be replaced with "reflective surface" or "reflective surface panel".
The technical scheme of the embodiment of the application provides an intelligent reflection panel based on a new regulation and control mechanism, namely an intelligent reflection panel based on light control response (referred to as a light control intelligent reflection panel for short), the theoretical basis of the intelligent reflection panel is photoelectric effect, and the photoelectric effect is explained below.
According to the theory proposed by hertz and einstein, when a photon strikes a material sensitive to light (called a photovoltaic material), the incident light energy can be absorbed by valence band electrons in the material, and then the electrons that absorb the photon energy can be converted into kinetic energy, and if the absorbed energy is enough to support the electrons to overcome the attraction of atomic nuclei, the electrons can be excited into a conduction band, at which time a hole is left in the valence band, forming a pair of electrons that can conduct, i.e. a pair of holes, and then further absorbing enough photon energy, and can escape from the surface in a very short time (billionths of a second) to become a photoelectron, thereby realizing the photoelectric effect of directly converting light energy into electric energy. The photoelectric effect can cause the increase of the concentration of carriers in the material, so that the conductivity and the dielectric property are changed, and the photoelectric effect which causes the change of the physical property of the material by illumination provides a theoretical basis for the light-operated intelligent reflecting surface.
According to the technical scheme of the embodiment of the application, starting from the photoelectric effect of the photoelectric material, the substrate is selected to replace the existing substrate, and the magnetron sputtering technology is combined to deposit and prepare the photoelectric structure unit (namely the structure unit realized by the photoelectric material) with the ordered periodic structure pattern on the substrate. Then, the light with specific frequency is used for irradiating the reflection panel, so that a photoelectric effect is triggered, free electrons excited by the photoelectric effect move directionally to form current, the polarization effect of the electrons is enhanced, and the dielectric property of the reflection panel is changed. According to an impedance calculation formula, the change of dielectric properties inevitably causes the change of input impedance, and then according to a reflection loss calculation formula, the difference of characteristic impedance and free space impedance inevitably causes reflection loss, namely the change of reflectivity.
Fig. 4 is a first schematic structural diagram of a reflective panel provided in an embodiment of the present application, and as shown in fig. 4, the reflective panel includes:
a substrate 41; and the number of the first and second groups,
a plurality of optoelectronic structure units 42 located on the substrate 41, each optoelectronic structure unit 42 of the plurality of optoelectronic structure units 42 being capable of producing an optoelectronic effect for light of a particular frequency;
wherein when the reflective panel is irradiated by light of a specific frequency, the electromagnetic performance of the reflective panel is changed by the photoelectric effect generated by the plurality of photoelectric structure units 42.
In the embodiment of the present application, the plurality of photoelectric structural units 42 are periodically distributed on the substrate 41. In some alternative embodiments, the plurality of photovoltaic structure units are periodically distributed along a specific direction on the substrate. In some alternative embodiments, the plurality of photovoltaic structure units are periodically distributed along a plurality of specific directions on the substrate. For example, a plurality of photoelectric structure units are periodically distributed on the substrate along 2 vertical directions.
In the embodiment of the application, the distribution pattern of the plurality of photoelectric structures on the substrate can be flexibly set according to the application scene. As a feature of the distribution pattern, the spacing between the photovoltaic structures can be flexibly set.
In the embodiment of the present application, a plurality of photoelectric structure units are embedded in a substrate, specifically, the substrate 41 has a plurality of groove structures, the plurality of groove structures correspond to the plurality of photoelectric structure units 42 one to one, and one photoelectric structure unit 42 is located in one groove structure.
Fig. 5 shows a side view of an optoelectronic structure unit embedded in a substrate, and it should be noted that, the surface of the optoelectronic structure unit in fig. 5 is flat relative to the surface of the substrate, but is not limited thereto, and the surface of the optoelectronic structure unit relative to the surface of the substrate may also be convex or concave.
In the embodiment of the present application, the photoelectric structure unit can generate a photoelectric effect for light of a specific frequency, and the structure of the photoelectric structure unit is described below.
In some alternative embodiments, referring to fig. 6, the photovoltaic construction unit 42 comprises:
a semiconductor layer 421, wherein the semiconductor layer 421 covers the substrate 41; and the number of the first and second groups,
a metal layer 422, wherein the metal layer 422 covers the semiconductor layer 421.
In the embodiment of the application, the semiconductor layer has a photoelectric effect under the irradiation of light, so that electrons in the semiconductor layer are excited into free electrons, the free electrons in the semiconductor layer are collected in the metal layer due to a schottky barrier formed between the semiconductor layer and the metal layer, and the semiconductor layer leaves free holes.
As an example, referring to fig. 7, holes in the semiconductor layer form positive charges and electrons in the metal layer form negative charges. Note that the semiconductor layer is an n-type semiconductor layer, and a schottky barrier is formed between the n-type semiconductor layer and the metal layer, which is equivalent to a schottky diode model.
It should be noted that as the positive charges in the semiconductor layer increase and the negative charges in the metal layer increase, the electron polarization effect increases, the dielectric properties of the optoelectronic structure unit change (the dielectric constant changes), and it is known that the reflectivity changes due to the change of the dielectric properties according to the impedance calculation formula and the reflection loss calculation formula.
The impedance calculation formula is as follows:
wherein, Z in Representing the input impedance, Z 0 Representing free space impedance，ε r Represents complex dielectric constant, μ r Represents the complex permeability, c represents the speed of light, f represents the frequency of the electromagnetic wave, and t represents the thickness of the material.
From the above equation of the impedance, ε r Will inevitably result in Z in A change in (c).
Reflection loss calculation formula:
where RL represents reflection loss.
According to the above formula, Z is in And Z 0 Necessarily causes reflection losses, Z in Necessarily resulting in a change in reflectivity.
In the embodiment of the present application, since the semiconductor layer in the photoelectric structure unit needs to be irradiated with light to excite free electrons, the metal layer and the substrate in contact with the semiconductor layer need to be transparent. Specifically, the substrate is a transparent substrate (may also be referred to as a transparent dielectric substrate), and the metal layer in the light structural unit is a transparent metal layer. Further, since the metal layer and the substrate are transparent, the entire reflection panel is transparent, and free electrons can be excited regardless of incidence of light from the front surface or the back surface of the reflection panel.
In some alternative embodiments, as shown in fig. 7, light may be irradiated onto the reflective panel from the front surface, and light is irradiated onto the semiconductor layer through the transparent metal layer, thereby exciting free electrons.
In some alternative embodiments, as shown in fig. 8, light may be irradiated onto the reflective panel from the back side, and light is irradiated onto the semiconductor layer through the transparent substrate, thereby exciting free electrons.
In some alternative embodiments, as shown in fig. 9, light may be irradiated onto the reflective panel from both the front side and the back side, the light of the front side is irradiated onto the semiconductor layer through the transparent metal layer, and the light of the back side is irradiated onto the semiconductor layer through the transparent substrate, thereby exciting free electrons.
As an alternative embodiment, the semiconductor layer in the photoelectric structural unit can adopt a doped zinc oxide film. The metal layer in the photoelectric structure unit can adopt a silver nanowire film. It can be understood that the photoelectric structural unit is a composite film consisting of a doped zinc oxide film and a silver nanowire film.
However, the present invention is not limited thereto, and other types of materials having photoelectric properties may be used for the semiconductor layer in the photoelectric structure unit, and other types of materials having conductive properties may be used for the metal layer in the photoelectric structure unit.
As an alternative, the substrate may be made of quartz glass or a high molecular polymer. The high molecular polymer may be, for example, polystyrene, polycarbonate, epoxy resin, styrene-acrylonitrile copolymer, or the like.
Fig. 10 is a schematic diagram of a reflective panel, in which a transparent substrate is used as a substrate of the reflective panel, and a photoelectric structural unit in the reflective panel is a composite film composed of a doped zinc oxide film and a silver nanowire film. For fig. 10, the shape of the photovoltaic structure unit is formed by two large and small C-shaped structures which are sleeved together. But not limited thereto, the shape of the photoelectric structural unit may also be other shapes such as a Z-shape, an i-shape, and the like. The technical scheme of the embodiment of the application does not limit the shape of the photoelectric structure unit.
The reflection panel that above-mentioned technical scheme of this application embodiment provided has realized the regulation and control of electromagnetic property based on photoelectric effect, compares in automatically controlled intelligent plane of reflection, has replaced electronic components through the photoelectricity constitutional unit to specific frequency photoresponse to realized replacing automatically controlled with light accuse, saved the feeder circuit on the reflection panel.
According to the reflection panel provided by the technical scheme of the embodiment of the application, the electromagnetic performance of the reflection panel can be regulated and controlled through illumination with specific frequency, effective control on electromagnetic waves is achieved, and the wireless channel environment is improved. In addition, the substrate of the reflecting panel can adopt a transparent substrate, and the metal layer in the photoelectric structure unit can adopt a transparent metal layer, so that light cannot be weakened strongly before penetrating through the transparent substrate or the metal layer to reach the semiconductor layer, and the light source can meet the requirement no matter the light source enters from the front side or the back side. Furthermore, when the material of the reflective panel is transparent in whole or in most parts, the whole reflective panel can be applied to a specific scene, for example, a glass wall of a high-rise building or a glass of an automobile can be added with the transparent reflective panel.
In practical process, all areas on the reflecting panel can be irradiated by light with the same frequency and light intensity, so that all areas of the photoelectric structural units can present the same electromagnetic characteristics, and thus present the same reflectivity. Or, different areas on the reflection panel are irradiated by light with different frequencies and light intensities, so that the photoelectric structure units in different areas can present different electromagnetic characteristics, and thus different reflectivities. Particularly, when the size of the area with adjustable reflectivity is smaller than the frequency band of the electromagnetic wave, a series of complex manipulations including directional reflection and beam forming can be realized on the electromagnetic wave. The transparent intelligent reflecting surface plate based on the light-operated response has the advantages that the requirement of a complex feed network is avoided, the design difficulty of the reflecting surface plate is reduced, and meanwhile, the transparent intelligent reflecting surface plate is more easily suitable for various environments due to the transparent optical characteristic, and the light source is not attenuated no matter the front side or the back side is irradiated, so that the regulation and control function is not influenced; in addition, the reflecting surface plate is prepared by selecting photoelectric materials with different limiting frequencies, so that the reflecting surface plate only responds to a light source with a specific frequency, and the influence of natural light and other light sources on the regulation and control of the reflecting arc panel is avoided.
Fig. 11 is a first schematic flow chart of a manufacturing method of a reflective panel provided in an embodiment of the present application, and as shown in fig. 11, the manufacturing method of the reflective panel includes the following steps:
step 1101: a substrate is obtained.
In the embodiment of the present application,
in some alternative embodiments of the present application, the substrate is a transparent substrate.
As an example, the substrate may be made of quartz glass or a high molecular polymer. The high molecular polymer may be, for example, polystyrene, polycarbonate, or styrene-acrylonitrile copolymer. It should be noted that annealing of the substrate is involved in the subsequent manufacturing process, and therefore for substrates made of high molecular weight polymers, the high molecular weight polymers need to be able to withstand the annealing temperature (e.g., an annealing temperature of 350 ℃) to ensure that decomposition and deformation do not occur during the annealing process.
Step 1102: and etching a plurality of groove structures on the substrate.
In some optional embodiments of the present application, before the etching the plurality of groove structures on the substrate, a mask is covered on the substrate; then, a plurality of groove structures are carved on the substrate covered with the mask. Here, the mask may employ an organic coating.
For example: covering a layer of organic coating on the surface of a transparent substrate, and then carving a groove structure corresponding to a photoelectric structure unit (also called a metamaterial structure unit) on the substrate by adopting a precision machining mode according to a pattern of the photoelectric structure unit (also called the metamaterial structure unit) obtained by simulation software.
In some optional embodiments of the present application, after the plurality of groove structures are etched on the substrate covered with the mask, the substrate with the plurality of groove structures is placed in an acidic solution and cleaned by using ultrasound.
Here, since an excessive residue is left on the substrate when the groove structure is processed, a cleaning process is required for the substrate; in addition, since some films need to be sprayed in the subsequent grooves to form the photoelectric structural unit, in order to enhance the film adhesion capability on the surfaces of the grooves, the grooves need to be subjected to surface modification.
For example: the transparent substrate with the groove structure is placed in an acidic solution and cleaned by ultrasound for a period of time, for example, 5 to 30 minutes, thereby completing the surface modification and cleaning process.
Step 1103: manufacturing a plurality of photoelectric structure units in the plurality of groove structures to obtain a reflecting panel; wherein each optoelectronic structure unit of the plurality of optoelectronic structure units is capable of producing an optoelectronic effect for light of a particular frequency.
In the embodiment of the present application, the photovoltaic structure unit includes a semiconductor layer and a metal layer, and the photovoltaic structure unit can be manufactured in the following manner.
1) A semiconductor dispersion liquid and a metal dispersion liquid are prepared.
In some alternative embodiments of the present application, the semiconductor layer is a doped zinc oxide thin film, and the doped zinc oxide dispersion for realizing the doped zinc oxide thin film is prepared by: i) Pouring doping substances of zinc salt and metal salt into the aqueous solution, adding a coupling agent, and stirring and mixing to obtain a precursor; II) preparing the precursor into doped zinc oxide powder by a solvothermal method; III) dispersing the doped zinc oxide powder in an aqueous solution to obtain a doped zinc oxide dispersion liquid.
For example: the doped zinc oxide powder is prepared by pouring the doped substances of zinc salt and metal salt into aqueous solution, sequentially adding a proper amount of coupling agent under the condition of water bath stirring, stirring and mixing to obtain a precursor, putting the precursor into a high-pressure reaction kettle, carrying out reaction by using a solvothermal method to prepare the doped zinc oxide powder, and preparing into aqueous phase mixed liquid (namely doped zinc oxide dispersion liquid) for later use.
In some optional embodiments of the present application, the metal layer is a silver nanowire thin film, and the silver nanowire dispersion for realizing the silver nanowire thin film is prepared by: and dispersing the silver nanowires in an aqueous solution to obtain a silver nanowire dispersion liquid.
2) Sequentially spraying the semiconductor dispersion liquid and the metal dispersion liquid on the substrate with the plurality of groove structures; forming a semiconductor layer after the semiconductor dispersion liquid is air-dried, forming a metal layer after the metal dispersion liquid is air-dried, covering the semiconductor layer on the substrate, and covering the metal layer on the semiconductor layer; the semiconductor layer and the metal layer in each groove structure form a photoelectric structure unit, and a plurality of photoelectric structure units are formed in the groove structures.
In some optional embodiments of the present application, the semiconductor layer is a doped zinc oxide thin film, the doped zinc oxide thin film is prepared by doping a zinc oxide dispersion liquid, the metal layer is a silver nanowire thin film, and the silver nanowire thin film is prepared by a silver nanowire dispersion liquid.
For example: uniformly spraying the doped zinc oxide dispersion liquid on a transparent substrate with a groove structure, and naturally air-drying to form a doped zinc oxide film, wherein the process can be repeated for multiple times according to different requirements on the thickness of the doped zinc oxide film; and then, continuously and uniformly spraying the silver nanowire dispersion liquid on the basis, and naturally drying to form the silver nanowire film.
Because a composite film (namely a photoelectric structure unit) consisting of the doped zinc oxide film and the silver nanowire film is formed in each groove structure, a plurality of photoelectric structure units are formed in a plurality of groove structures.
In addition, in the process of manufacturing the photoelectric structure unit, in addition to the formation of the film in the groove structure of the substrate, the formation of the redundant film in other areas except the groove structure of the substrate, in order to remove the redundant film, after the photoelectric structure unit is manufactured, the substrate is annealed, so that the mask on the surface of the substrate is decomposed, and the purpose of removing the redundant film is achieved. Specifically, the substrate after spraying can be placed in a muffle furnace for annealing treatment, so that the organic coating on the surface of the substrate is thermally decomposed.
The reflection panel prepared by the technical scheme of the embodiment of the application is an intelligent reflection panel based on light control response, and compared with an electric control reflection panel, the reflection panel has no feed requirement because an adjustable electronic device is replaced by a photoelectric structural unit. In addition, the material of the reflecting panel can adopt the material with high light transmittance, so that the intelligent regulation and control of the reflecting performance of the reflecting panel are realized by combining the photoelectric effect of the photoelectric structure unit on the basis of ensuring the high light transmittance of the reflecting panel.
Fig. 12 is a second schematic flow chart of a manufacturing method of a reflective panel provided in an embodiment of the present application, and as shown in fig. 12, the manufacturing method of the reflective panel includes the following steps:
step 1201: an organic coating is coated on the surface of the transparent substrate.
In an application example, quartz glass can be used as a transparent substrate, the E51 type epoxy resin and the W93 curing agent are uniformly mixed according to a mass ratio of 10.
Step 1202: and (3) according to the pattern of the photoelectric structure unit obtained by simulation software, a groove structure is carved in a precise machining mode based on the pattern.
Here, the pattern of the optoelectronic construction unit can be designed using simulation software and the pattern data can then be transmitted to a fine-machining tool, which machines a groove structure on the surface of the transparent substrate covered with the organic coating according to the pattern data.
Step 1203: and carrying out surface modification and cleaning treatment on the transparent substrate.
Specifically, the transparent substrate is placed in an acidic solution and cleaned with ultrasound for a period of time, such as 5-30 minutes.
In an application example, taking quartz glass as an example of a transparent substrate, the quartz glass is placed in a hydrogen peroxide/sulfuric acid mixed solution configured according to a volume ratio of 2.
Step 1204: and (3) carrying out spraying coating by using the doped zinc oxide dispersion liquid and the silver nanowire dispersion liquid.
Specifically, 1) pouring doping substances of zinc salt and metal salt into an aqueous solution, sequentially adding a proper amount of coupling agent under the condition of water bath stirring, stirring and mixing to obtain a precursor, putting the precursor into a high-pressure reaction kettle, carrying out reaction by using a solvothermal method to prepare doped zinc oxide powder, and preparing into a water-phase mixed solution (namely doped zinc oxide dispersion) for later use. 2) Uniformly spraying the doped zinc oxide dispersion liquid on the transparent substrate obtained in the previous step in a spraying mode, and naturally drying to form a doped zinc oxide film, wherein the process can be repeated for multiple times according to different requirements on the thickness of the doped zinc oxide film; 3) And dispersing the silver nanowires in an aqueous solution to form a silver nanowire dispersion liquid, continuously spraying the silver nanowire dispersion liquid on the zinc oxide-doped thin film by using a spray gun, and naturally drying to form the silver nanowire thin film.
In one application example, 1) weighing 0.2g of aluminum nitrate nonahydrate and 1.28g of zinc acetate dihydrate powder, pouring into 80ml of methanol solution, placing the methanol solution in a water bath condition of 70 ℃ for magnetic stirring, then adding sodium hydroxide to adjust the pH value of the mixed solution to 9, then adding 0.35g of coupling agent for continuous stirring for 3 hours, placing the uniformly stirred mixed solution into a 100ml high-pressure reaction kettle, preserving the temperature at 150 ℃ by using a solvothermal method for 6 hours, then combining high-speed centrifugation to obtain a precipitate (namely aluminum-doped zinc oxide powder) generated by reaction, and re-dispersing the precipitate into water to prepare a dispersion liquid with the concentration of 1g/ml for later use. 2) Loading the aluminum-doped zinc oxide dispersion liquid prepared in the process into a spray gun, spraying at the speed of setting the pressure of the spray gun to be 0.8MPa, setting the distance to be 12cm and the moving speed to be 0.5cm/s, and then naturally drying the aluminum-doped zinc oxide dispersion liquid until a thin film is formed, wherein the operation can be repeated for a plurality of times according to the actual thickness requirement of the aluminum-doped zinc oxide; 3) Dispersing silver nanowires with the diameter less than 20 nanometers and the length-diameter ratio more than 500 in a methanol solution according to the concentration of 0.5g/ml, then putting the silver nanowires into a spray gun, spraying the silver nanowires at the pressure of 0.5MPa, the distance of 10cm and the moving speed of 0.5cm/s, and then naturally drying the silver nanowires until a thin film is formed.
Step 1205: and (3) placing the transparent substrate subjected to film coating in a muffle furnace for annealing treatment, so that the organic coating on the surface of the transparent substrate is thermally decomposed, and the light-controlled transparent intelligent reflecting surface plate is obtained.
In one application example, the transparent substrate with the finished coating obtained by the foregoing process is placed in a muffle furnace, heated to 350 ℃, and kept for 4 hours to ensure that the organic coating (i.e. organic matter with thermal decomposition temperature below 350 ℃, such as epoxy resin) on the substrate can be decomposed by heat, and then the transparent reflective panel with response under the action of illumination can be obtained.
According to the technical scheme, in an application example, the aluminum-doped zinc oxide film can be adopted as the doped zinc oxide film, the transparent aluminum-doped zinc oxide photoelectric film and the silver nanowire film are adopted to establish Schottky contact, free electrons can be generated by the aluminum-doped zinc oxide film under the illumination condition due to the photoelectric effect, directional movement is generated under the action of a Schottky barrier, the electronic polarization movement is frequent, the dielectric property is changed along with the movement, and the reflection property is further influenced. That is, the reflective panel may realize a change in reflective performance under the effect of a photo-electric effect induced by light irradiation. Because the limit frequency of the aluminum-doped zinc oxide film is positioned in the ultraviolet light frequency band, the aluminum-doped zinc oxide film has photoelectric response to light waves with the frequency at and above the ultraviolet light frequency band, and the polarization loss is increased through the directional movement of free electrons, so that the reflectivity of the illuminated reflecting plate can be changed. The light waves with different light intensities and frequencies are irradiated to different areas of the reflecting panel, so that the reflecting performance of the reflecting panel can be intelligently regulated and controlled.
The intelligent reflection panel provided by the embodiment of the application has the characteristics of high transmittance and light control, and has wide application prospects in future communication development and wireless channel environment improvement.
It should be appreciated that reference throughout this specification to "in an embodiment" or "in some embodiments" means that a particular feature, structure or characteristic described in connection with the embodiment is included in at least one embodiment of the present application. Thus, the appearances of the phrase "in an embodiment of the present application" or "in some embodiments" in various places throughout this specification are not necessarily all referring to the same embodiments. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. It should be understood that, in the various embodiments of the present application, the sequence numbers of the above-mentioned processes do not mean the execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present application. The above-mentioned serial numbers of the embodiments of the present application are merely for description and do not represent the merits of the embodiments.
The methods disclosed in the several method embodiments provided in the present application may be combined arbitrarily without conflict to arrive at new method embodiments.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (16)
1. A reflective panel, comprising:
a substrate; and the number of the first and second groups,
a plurality of optoelectronic building blocks located on the substrate, each of the plurality of optoelectronic building blocks capable of producing an optoelectronic effect for light of a particular frequency;
when the reflection panel is irradiated by light with a specific frequency, the electromagnetic performance of the reflection panel is changed due to the photoelectric effect generated by the plurality of photoelectric structure units.
2. The reflective panel of claim 1, wherein the substrate has a plurality of groove structures corresponding to the plurality of photovoltaic structure units one-to-one, wherein one photovoltaic structure unit is located in one groove structure.
3. The reflective panel of claim 1, wherein said photovoltaic structural unit comprises:
a semiconductor layer overlying the substrate; and (c) a second step of,
a metal layer overlying the semiconductor layer.
4. The reflective panel of claim 3 wherein said semiconductor layer is a doped zinc oxide film.
5. The reflective panel of claim 3 wherein said metal layer is a silver nanowire film.
6. The reflective panel of any of claims 3 to 5 wherein said metal layer is a transparent metal layer.
7. The reflective panel of any of claims 1 to 5, wherein said substrate is a transparent substrate.
8. The reflective panel of any of claims 1 to 5, wherein said plurality of photovoltaic structure units are periodically distributed on said substrate.
9. A method of making a reflective panel, the method comprising:
obtaining a substrate;
etching a plurality of groove structures on the substrate;
manufacturing a plurality of photoelectric structure units in the plurality of groove structures to obtain a reflecting panel;
wherein each optoelectronic structure unit of the plurality of optoelectronic structure units is capable of producing an optoelectronic effect for light of a particular frequency.
10. The method of claim 9,
before the step of etching a plurality of groove structures on the substrate, the method further comprises: covering a layer of mask on the substrate;
the etching of the plurality of groove structures on the substrate includes: and etching a plurality of groove structures on the substrate covered with the mask.
11. The method of claim 10, wherein after the etching the plurality of trench structures on the substrate covered with the mask, the method further comprises:
and (3) putting the substrate with the plurality of groove structures in an acid solution, and cleaning the substrate by using ultrasound.
12. The method of claim 10, wherein fabricating a plurality of optoelectronic building blocks within the plurality of trench structures comprises:
preparing a semiconductor dispersion liquid and a metal dispersion liquid;
sequentially spraying the semiconductor dispersion liquid and the metal dispersion liquid on the substrate with the plurality of groove structures;
forming a semiconductor layer after the semiconductor dispersion liquid is air-dried, forming a metal layer after the metal dispersion liquid is air-dried, covering the semiconductor layer on the substrate, and covering the metal layer on the semiconductor layer; the semiconductor layer and the metal layer in each groove structure form a photoelectric structure unit, and a plurality of photoelectric structure units are formed in the groove structures.
13. The method of claim 12, wherein the semiconductor layer is a doped zinc oxide thin film, and wherein preparing the semiconductor dispersion comprises:
pouring doping substances of zinc salt and metal salt into the aqueous solution, adding a coupling agent, and stirring and mixing to obtain a precursor;
preparing the precursor into doped zinc oxide powder by a solvothermal method;
and dispersing the doped zinc oxide powder in an aqueous solution to obtain a doped zinc oxide dispersion.
14. The method of claim 12, wherein the metal layer is a silver nanowire film, and preparing a metal dispersion comprises:
and dispersing the silver nanowires in an aqueous solution to obtain a silver nanowire dispersion liquid.
15. The method of any one of claims 10 to 14, wherein after fabricating a plurality of optoelectronic building blocks within the plurality of trench structures, the method further comprises:
and annealing the substrate with the plurality of photoelectric structure units so as to decompose the mask on the surface of the substrate.
16. The method according to any one of claims 9 to 14, wherein the substrate is a transparent substrate.
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