CN104570404A - Optical wave beam forming network chip based on thermal optical modulation and preparing method thereof - Google Patents
Optical wave beam forming network chip based on thermal optical modulation and preparing method thereof Download PDFInfo
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- CN104570404A CN104570404A CN201410802314.3A CN201410802314A CN104570404A CN 104570404 A CN104570404 A CN 104570404A CN 201410802314 A CN201410802314 A CN 201410802314A CN 104570404 A CN104570404 A CN 104570404A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0147—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on thermo-optic effects
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
Abstract
The invention relates to an optical wave beam forming network chip based on thermal optical modulation. The optical wave beam forming network chip is formed by sequentially overlaying a silicon substrate layer, a silicon dioxide burying layer, an optical wave conduction structure layer and a thermal optical modulation structure layer from bottom to top, wherein the optical wave conduction structure layer comprises an incident coupling grating block, an incident end optical waveguide body, a first photonic crystal slow optical waveguide, a first emergent end optical waveguide body, a first emergent coupling grating block, a second photonic crystal slow optical waveguide, a second emergent end optical waveguide body, a second emergent coupling grating block and a thermal optical modulation structure layer substrate block, and the optical wave conduction structure layer comprises a zigzag thermal optical electrode, a negative electrode block and a positive electrode block. The preparing method comprises the following three steps that the structures of the photonic crystal slow optical waveguides, the optical waveguide bodies and the coupling gratings are prepared; the thermal optical electrode of chrome materials is prepared; a top layer gold thin film is prepared. The optical wave beam forming network chip has the beneficial technical effects that the instantaneous bandwidth is great, the size is small, the weight is light, and the power consumption is low.
Description
Technical field
The invention belongs to beam-forming network device arts, especially belong to micro-nano devices field, be specifically related to a kind of light beam based on thermo-optic modulation and form network chip and preparation method thereof.
Background technology
Phased-array radar is also known as making phased-array radar, phase place by changing radar signal changes beam position direction, compared with mechanical scanning radar, phased-array radar beam position is flexible, precision is high, scan efficiency is high, self-adaptation and strong anti-interference performance, has higher reliability.
Beam-former is the core devices of Phased Array Radar Antenna, and the maximal value being controlled Phased Array Radar Antenna directional diagram by Beam-former is pointed to, thus realizes the scanning of phased-array radar velocity of wave, and its performance determines the technical feature of phased-array radar to a great extent.Due to restriction and the restriction of the factors such as transit time and aperture effect, traditional electrical domain is difficult to obtain desirable signal bandwidth based on the phased array antenna of phase shifter, limits the lifting of Phased Array Radars.In order to realize phased-array radar wide bandwidth angle scanning, Real-time Delay line should be used on each unit of array antenna or each submatrix rank to replace phase shifter, thus the appearance avoiding wave beam to look side ways.But for the delay line adopting metal waveguide or concentric cable to form, when making massive phased array antenna, metal waveguide or the coaxial cable length of needs are longer, and signal attenuation is large.Utilize modern photoelectron technology to improve existing microwave antenna system, significantly can reduce volume and the weight of device, improve device performance.Wherein optical control beam forms the important research field that technology is Microwave photonics, also be the core technology of smart antenna in phased-array radar and next generation wireless communication, it is by controlling phase differential or the delay inequality of each microwave link in array, the specific direction of the radiation field of each microwave radiation source in far field is produced interferes greatly, reach the object of directional transmissions (or receive), have that volume is little, lightweight, electromagnetism interference, band are roomy, without advantages such as beam tilts.
In optical control beam shaper, the main method producing time delay extends light path.But extend light path and need optical fiber or waveguide etc. to detour in space arrangement, its system bulk is larger, structure is also comparatively complicated.And for airborne or spaceborne phased array antenna, reduce volume and the weight of antenna, just can put into the more antenna of array element under limited space and loading condition, significantly can improve the performance index of phased-array radar.It is the effective way solved the problem that optical control beam shaper is prepared in the design of application slow light effect.Slow light effect realizes light Real-time Delay by reducing propagation velocity of electromagnetic wave, and its structure of method relatively extending light path is more compact, and volume is less, weight is lighter.Delay line is combined with photoelectric devices such as photoswitches, even can optical control beam shaper is integrated on chip, realizes the chip of array antenna unit, meet Phased Array Radar Antenna miniaturization of new generation, lightness, integrated development trend.
Photonic crystal slow optical wave guide is produce strong scattering by manufacturing artificial microstructure after all, and in photon band gap, introduce slower rays guided mode, thus realizes light speed reduction.Utilize the structure of relatively simple photonic crystal slow optical wave guide, can realize under less device size that the light velocity tens is even several centesimally to slow down.The realization of photon crystal structure slow light effect does not have particular/special requirement to external environment condition, just can realize under normal temperature.Utilize the slower rays characteristic of photon crystal wave-guide, the function of light time delay can be realized.Meanwhile, photonic crystal basic size is in the wavelength magnitude of light, and photonic crystal waveguide device is generally in micron dimension, this make highly integrated even realize chip-scale optical control beam formed become possibility.
Optical control beam shaper based on photonic crystal slow optical wave guide is expected under the size of hundreds of square microns, realizes Beam-former each branch road amount of delay high precision continuously adjustabe.Compare and utilize waveguide resonant cavity and optical fiber to detour the Beam-former of alignment technology, there is the advantage that volume is less, integrated level is higher, precision is higher.Photonic crystal slow optical wave guide has broad application prospects in phased array radar antenna beam shaper, especially comparatively responsive to volume and weight spaceborne and airborne phased array radar, optical control beam shaper instrument based on photonic crystal slow optical wave guide has more compact structure, less volume and lighter weight, is expected to play the part of important role in the radar revolution of miniaturization and lightness.In addition, photonic crystal slow optical wave guide optical control beam shaper can also be widely used in mobile communication intelligent antenna, also has important potential application foreground in wireless mobile communications field.
But the delayed modulation mechanism of photonic crystal slow optical wave guide is comparatively complicated.For common photon crystal structure, as airport structure and dielectric posts structure, want to prepare thermode on photon crystal structure surface and then must prepare top covering at device surface, and for said structure, be difficult to the high-flatness realizing surface after preparing top covering, have great impact to the thermo-optical heated by electrodes efficiency prepared and firmness.
Summary of the invention
The technical problem to be solved in the present invention is that the light beam based on thermo-optic modulation proposing a kind of integrated level being applied to phased-array radar and smart antenna high, lightweight, low in energy consumption forms network chip and preparation method.For achieving the above object, the technical solution used in the present invention is:
Light beam based on thermo-optic modulation forms a network chip, is formed by stacking successively by layer-of-substrate silicon 4 from bottom to top, buried layer of silicon dioxide 2, light wave conducting structure layer and thermo-optic modulation structural sheet.
Described light wave conducting structure layer, comprises incident coupling grating block 10, incidence end light wave guide 9, first photonic crystal slow optical wave guide 7, first exit end light wave guide 17, first outgoing coupling grating block 11, second photonic crystal slow optical wave guide 8, second exit end light wave guide 18, second outgoing coupling grating block 16 and thermo-optic modulation structural sheet substrate bulk 15.Wherein, the output terminal of coupled light grating block 10 is connected with the input end of incidence end light wave guide 9.Incidence end light wave guide 9 is similar to Y-shaped.The output terminal of incidence end light wave guide 9 is connected with the input end of the first photonic crystal slow optical wave guide 7, the input end of the second photonic crystal slow optical wave guide 8 respectively.The output terminal of the first photonic crystal slow optical wave guide 7 is connected through the input end of the first exit end light wave guide 17 with the first outgoing coupling grating block 11.The output terminal of the second photonic crystal slow optical wave guide 8 is connected through the input end of the second exit end light wave guide 18 with the second outgoing coupling grating block 16.In the outside of the first photonic crystal slow optical wave guide 7, between the first photonic crystal slow optical wave guide 7 and the second photonic crystal slow optical wave guide 8, the outside of the second photonic crystal slow optical wave guide 8 is equipped with thermo-optic modulation structural sheet substrate bulk 15.
Described light wave conducting structure layer, comprises back-shaped thermo-optical electrode 12, negative electrode block 13 and positive electrode block 14.Wherein, the thermo-optic modulation structural sheet substrate bulk 15 of the first photonic crystal slow optical wave guide 7 both sides is provided with a pair back-shaped thermo-optical electrode 12.The thermo-optic modulation structural sheet substrate bulk 15 of the second photonic crystal slow optical wave guide 8 both sides is provided with another to back-shaped thermo-optical electrode 12.One end of aforementioned four back-shaped thermo-optical electrodes 12 all links together with negative electrode block 13, and the other end of described back-shaped thermo-optical electrode 12 is connected with a positive electrode block 14 respectively.Described negative electrode block 13 is all arranged in thermo-optic modulation structural sheet substrate bulk 15 with positive electrode block 14.
The preparation method of photonic crystal thermo-optic modulation beam-forming network chip of the present invention, carries out as follows:
Step 1, get one piece of SOI substrate, prepared the structure of photonic crystal slow optical wave guide, optical waveguide and coupling grating by photoetching process thereon.
Step 2, by thermal evaporation process, the SOI substrate of completing steps 1 is prepared the thermo-optical electrode of chromium material.
Step 3, by thermal evaporation process, completing steps 2 the suprabasil thermo-optical electrode surface of SOI prepare positive and negative electrode Pad top layer gold thin film.
Furtherly, the preparation method of this photonic crystal thermo-optic modulation beam-forming network chip is specific as follows:
Step 1, get one piece of SOI substrate, prepared the structure of photonic crystal slow optical wave guide, optical waveguide and coupling grating by photoetching process thereon.
Step 1.1 is got a slice SOI substrate and is carried out cleaning, and the top silicon layer thickness of described SOI substrate is 220nm, and middle buried layer of silicon dioxide thickness is 3 μm, and the substrate silicon thickness bottom it is 600 μm.
Step 1.2 makes the photoresist film that a layer thickness is 2-3 μm in the SOI substrate through step 1.1 cleaning.
Step 1.3 will apply photoresist film substrate through step 1.2 and put into baking oven front baking.
Step 1.4 carries out deep UV lithography to the photoresist film through the process of step 1.3 front baking.
Step 1.5, through technological processes such as development, post bakes, produces photoresist mask arrangement on the SOI surface through step 1.4 exposure-processed.
Step 1.6 is by plasma etching (Inductively Coupled Plasma etching, ICP) technology, make inductively module and photonic crystal thermo-optic modulation beam-forming network chip body structure processing the surface with the SOI of photoresist mask arrangement obtained through step 1.5, addedly say, the etching depth in this step is 220nm.
The photoresist on the SOI surface through plasma etch processes described in step 1.6 is removed by step 1.7, obtain photonic crystal thermo-optic modulation beam-forming network chip body structure, and layer-of-substrate silicon 4, buried layer of silicon dioxide 2 and light wave conducting structure layer from bottom to top of the present invention.
Step 2, by thermal evaporation process, the SOI substrate of completing steps 1 is prepared the thermo-optical electrode of chromium material.
Step 2.1 prepares in the SOI substrate of photonic crystal thermo-optic modulation beam-forming network chip body structure in step 1.7 prepares the photoresist film that a layer thickness is 100nm.
The structure that step 2.1 has been prepared by step 2.2 carries out front baking.
Step 2.3 exposes the photoresist film prepared.
Step 2.4, after development, post bake, obtains mask structure.
Step 2.5 apply thermal evaporation process prepare 200nm after chromium thin film.
The substrate application stripping technology of prepared by step 2.6 pair step 2.5 be coated with chromium thin film is peeled off not having the chromium thin film in electrode pattern region, obtains chromium material thermo-optic electrode structure.
Step 3, excessively thermal evaporation process, prepare positive and negative electrode Pad top layer gold thin film at the suprabasil thermo-optical electrode surface of the SOI of completing steps 2.
The substrate of what step 2.6 had been prepared by step 3.1 be coated with chromium thermo-optical electrode repeats second step related process, obtains the gold thin film being covered in positive and negative electrode.
useful technique effect
The photonic crystal thermo-optic modulation beam-forming network chip that the present invention proposes, relative to existing beam-forming network scheme, has the advantage that instant bandwidth is large, volume is little, lightweight, low in energy consumption.Especially following aspect is shown:
The time delay of the present invention's application photonic crystal slow optical wave guide light speed reduction hot generation light, then back-shaped thermo-optical electrode is prepared at photonic crystal slow optical wave guide two ends, and utilize the modulation of thermo-optical properties realization to waveguide amount of delay of material, and by the same chip integrated for multiple photonic crystal slow optical wave guide branch road, thus realize the chip of beam-forming network device.To sum up, based on the photonic crystal slow optical wave guide beam-forming network chip of back-shaped thermo-optical electrode relative to existing beam-forming network scheme, there is the advantage that instant bandwidth is large, volume is little, lightweight, low in energy consumption.
With SOI(Silicon-on-Insulator) prepare material for photonic crystal thermo-optic modulation beam-forming network chip, wherein SOI pushes up silicon layer thick is 220nm, below buried layer of silicon dioxide is thick is 3 μm, after electromagnetic wave is coupled into device from coupled light grating, due to the light speed reduction characteristic of photonic crystal slow optical wave guide, the electromagnetic wave entered wherein produces light time delay, power up the back-shaped thermo-optical electrode of preparation and photonic crystal slow optical wave guide both sides, the thermo-optical properties by material regulates each branch road amount of delay.By the thermo-optic effect of photonic crystal slow optical wave guide, the precision tuning to different branch amount of delay can be realized, by will the outgoing electromagnetic wave synthesis of different delayed time information be carried, the deflection of electromagnetic wave shooting angle can be realized, thus realize Wave beam forming.
Accompanying drawing explanation
Fig. 1 is the schematic perspective view that the light beam based on thermo-optic modulation of the present invention forms network chip.
Fig. 2 is the side view of Fig. 1.
Fig. 3 is the vertical view of Fig. 1.
Fig. 4 is the enlarged diagram of a-quadrant in Fig. 3.
Fig. 5 is the schematic perspective view after being removed by thermo-optic modulation structural sheet in Fig. 1.
Fig. 6 is the vertical view of Fig. 5.
Fig. 7 is the schematic perspective view of thermo-optic modulation structural sheet in Fig. 1.
Fig. 8 is the vertical view of Fig. 7.
Fig. 9 is the technique letter view of step 1 in preparation method of the present invention.
Figure 10 is the technique letter view of step 2 in preparation method of the present invention.
Figure 11 has been the product schematic diagram after the step 3 of preparation method of the present invention.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
See Fig. 1, a kind of light beam based on thermo-optic modulation forms network chip, is formed by stacking successively by layer-of-substrate silicon 4 from bottom to top, buried layer of silicon dioxide 2, light wave conducting structure layer and thermo-optic modulation structural sheet.
See Fig. 5, described light wave conducting structure layer, comprises incident coupling grating block 10, incidence end light wave guide 9, first photonic crystal slow optical wave guide 7, first exit end light wave guide 17, first outgoing coupling grating block 11, second photonic crystal slow optical wave guide 8, second exit end light wave guide 18, second outgoing coupling grating block 16 and thermo-optic modulation structural sheet substrate bulk 15.Wherein, the output terminal of coupled light grating block 10 is connected with the input end of incidence end light wave guide 9.The output terminal of incidence end light wave guide 9 is connected with the input end of the first photonic crystal slow optical wave guide 7, the input end of the second photonic crystal slow optical wave guide 8 respectively.The output terminal of the first photonic crystal slow optical wave guide 7 is connected through the input end of the first exit end light wave guide 17 with the first outgoing coupling grating block 11.The output terminal of the second photonic crystal slow optical wave guide 8 is connected through the input end of the second exit end light wave guide 18 with the second outgoing coupling grating block 16.In the outside of the first photonic crystal slow optical wave guide 7, between the first photonic crystal slow optical wave guide 7 and the second photonic crystal slow optical wave guide 8, the outside of the second photonic crystal slow optical wave guide 8 is equipped with thermo-optic modulation structural sheet substrate bulk 15, as shown in Figure 6.
See Fig. 7, described light wave conducting structure layer, comprises back-shaped thermo-optical electrode 12, negative electrode block 13 and positive electrode block 14.Wherein, see Fig. 3, the thermo-optic modulation structural sheet substrate bulk 15 of the first photonic crystal slow optical wave guide 7 both sides is provided with a pair back-shaped thermo-optical electrode 12.The thermo-optic modulation structural sheet substrate bulk 15 of the second photonic crystal slow optical wave guide 8 both sides is provided with another to back-shaped thermo-optical electrode 12.One end of aforementioned four back-shaped thermo-optical electrodes 12 all links together with negative electrode block 13, and the other end of described back-shaped thermo-optical electrode 12 is connected with a positive electrode block 14 respectively.Described negative electrode block 13 is all arranged in thermo-optic modulation structural sheet substrate bulk 15 with positive electrode block 14, as shown in Figure 8.
Furtherly, the first photonic crystal slow optical wave guide 7 and the second photonic crystal slow optical wave guide 8 are the time-delay generator part of beam-forming network chip.
See Fig. 1 and Fig. 3, furtherly, the first photonic crystal slow optical wave guide 7 and the second photonic crystal slow optical wave guide 8 are rectangular blocks, be provided with and arrange airport 19 in array in the first photonic crystal slow optical wave guide 7 and the second photonic crystal slow optical wave guide 8.
Furtherly, the first photonic crystal slow optical wave guide 7 and the second photonic crystal slow optical wave guide 8 are formed by photonic crystal.The structure of described photonic crystal is triangular crystal lattice structure, and the structural cycle a of photonic crystal is 460nm.
See Fig. 4, the first photonic crystal slow optical wave guide 7 is made up of the capable waveguide of bar of more than 9.The width w of the capable waveguide of described bar is 450nm, and the waveguide of every rule row is provided with the airport 19 of more than 12.The radius r of described airport 19 is 173nm, and the spacing of adjacent two airports 19 is 30nm; See Fig. 6, the structure of described second photonic crystal slow optical wave guide 8 is identical with the structure of the first photonic crystal slow optical wave guide 7.
See Fig. 2, furtherly, be equipped with at the end face of negative electrode block 13 and the end face of positive electrode block 14 gold foil film 6 that a layer thickness is 100nm; See Fig. 1, furtherly, the first photonic crystal slow optical wave guide 7 and the second photonic crystal slow optical wave guide 8 are W1 type photonic crystal straight wave guide.
See Fig. 2, the height of light wave conducting structure layer and thermo-optic modulation structural sheet is 0.22 μm, and the thickness of buried layer of silicon dioxide 2 is about 3 μm, and the thickness of layer-of-substrate silicon 4 is about 600 μm.Preferred scheme is, as in Fig. 2,
h 1=220nm is the height of light wave conducting structure layer,
h 2=3 μm is the thickness of buried layer of silicon dioxide,
h 3=600 μm is the thickness of bottom silicon,
h 4=200nm is chromium material thermo-optic thickness of electrode,
h 5=100nm is gold thin film thickness.
See Fig. 3, furtherly, between coupled light grating block 10 with incidence end light wave guide 9, between the first exit end light wave guide 17 with the first outgoing coupling grating block 11, between the second exit end light wave guide 18 with the second outgoing coupling grating block 16, coupled light grating block 10, first outgoing coupling grating block 11, second outgoing coupling grating block 16 is connected with all adopting grating coupling scheme between external fiber.
See Fig. 1, furtherly, layer-of-substrate silicon 4, buried layer of silicon dioxide 2 and, light wave conducting structure layer is that one piece of SOI materials processing forms.The material of back-shaped thermo-optical electrode 12, negative electrode block 13 and positive electrode block 14 is chromium, and thickness is 200nm.
During use, electromagnetic wave to be coupled in photonic crystal thermo-optic modulation beam-forming network chip body structure via coupled light grating and to divide equally and enters in beam splitter structure, then enter in photonic crystal slow optical wave guide, because photonic crystal slow optical wave guide has slow light effect, the group velocity of light in photonic crystal slow optical wave guide reduces, thus realizes light time delay.Tuning in order to what realize photonic crystal slow optical wave guide amount of delay, preparing the back-shaped thermo-optical electrode of chromium material in photonic crystal slow optical wave guide both sides, by guiding to chip edge, and preparing positive and negative electrode at chip edge.In order to improve the conjugation of gold wire and positive and negative electrode in later stage and beta version bonding technology, positive and negative electrode prepares gold thin film.Positive and negative electrode powers up, and the back-shaped thermo-optical electrifying electrodes heating of chromium material, because SOI material has higher thermo-optic effect, the amount of delay powering up branch road will change, and then complete the thermo-optical tunability to this branch road amount of delay.Therefore the maximum delay amount of photonic crystal thermo-optic modulation beam-forming network chip is determined by the length of photonic crystal slow optical wave guide and the slower rays factor, amount of delay is tuning to be controlled by impressed voltage, thus realizes the hair-breadth tuning to each branch road amount of delay.Light produces required amount of delay after the branch road of thermo-optical tunability, is coupled out beam-forming network chip via outgoing coupling grating, realizes the function that wave beam controls after Beam synthesis.
Preferred scheme is: see Fig. 4, and adopt triangular crystal lattice airport structure as photonic crystal slow optical wave guide agent structure, photon crystal structure cycle a=460nm, airport radius is D=346nm.All photonic crystal slow optical wave guide is built to+x direction (i.e. the length direction of the second photonic crystal slow optical wave guide 8) mobile Δ x=30nm by the airport unit 20 outside the center line being positioned at the Width of the second photonic crystal slow optical wave guide 8 and by the airport 19 in airport unit 21 region inside the center line being positioned at the Width of the second photonic crystal slow optical wave guide 8.Now photonic crystal slow optical wave guide group velocity is about Vg=C/30, and wherein C is the light velocity in vacuum.The photonic crystal slow optical wave guide that can obtain about 1.3mm length as calculated can realize the amount of delay of more than 200ps.Optical waveguide width is w=450nm, and structure is slab waveguide.
It is chromium that thermo-optical electrode prepares material, and width is 2 μm, and thickness is 200nm, and adopts back-shaped structure to improve electrode thermal value.Electrode is connected with the chromium material electrodes Pad being prepared in chip edge, in order to improve the firmness linked with positive and negative electrode with gold wire in beta version lead key closing process, the gold thin film after 100nm is prepared on electrode top layer by lead-in wire.Electrode powers up rear heating, controls back-shaped electrode thermal value by impressed voltage, thus reaches the object controlling each branch road amount of delay of Wave beam forming network chip.
See Fig. 9, Figure 10 and Figure 11, be the preparation method of photonic crystal thermo-optic modulation beam-forming network chip of the present invention, carry out as follows:
Step 1, get one piece of SOI substrate, prepared the structure of photonic crystal slow optical wave guide, optical waveguide and coupling grating by photoetching process thereon.
Step 2, by thermal evaporation process, the SOI substrate of completing steps 1 is prepared the thermo-optical electrode of chromium material.
Step 3, by thermal evaporation process, prepare positive and negative electrode Pad top layer gold thin film at the suprabasil thermo-optical electrode surface of the SOI of completing steps 2.
Concrete manufacturing process of the present invention is as follows:
The first step, prepare the agent structures such as photonic crystal slow optical wave guide, optical waveguide and coupling grating, see Fig. 9:
Step 1.1: to the thick 220nm of top silicon, thick 3 μm of buried layer of silicon dioxide, cleaning is carried out in the SOI substrate (as illustrated in fig. 9) that substrate silicon 600 μm is thick.
Step 1.2: make in SOI substrate a layer thickness be the photoresist film 104(of 2-3 μm as shown in figure 9b).
Step 1.3: baking oven front baking is put in the substrate of coating photoresist film 104.
Step 1.4: deep UV lithography is carried out to the photoresist film 104 prepared, as is shown in fig. 9 c.
Step 1.5: as shown in figure 9d, makes photoresist mask arrangement through technological processes such as development, post bakes.
Step 1.6: as shown in figure 9e, sense coupling (Inductively Coupled Plasma etching is carried out to the photoresist mask arrangement that applying step 1.5 is made, ICP), make photonic crystal thermo-optic modulation beam-forming network chip body structure, etching depth is 220nm.
Step 1.7: remove photoresist film 105, obtain photonic crystal thermo-optic modulation beam-forming network chip body structure, as shown in figure 9f.
Second step, prepare chromium material thermo-optic electrode, see Figure 10:
Step 2.1: as shown in Figure 10 a, the photoresist film 201 that a layer thickness is 100nm is prepared in the SOI substrate preparing photonic crystal thermo-optic modulation beam-forming network chip body structure in step 1.7.
Step 2.2: structure step 2.1 prepared carries out front baking.
Step 2.3: as shown in fig. lob, exposes the photoresist film 201 prepared.
Step 2.4: as shown in figure l oc, obtains mask structure through development, post bake.
Step 2.5: as shown in fig. 10d, application thermal evaporation process prepares the chromium thin film after 200nm.
Step 2.6: the substrate application stripping technology being coated with chromium thin film prepared by step 2.5 being peeled off not having the chromium thin film in electrode pattern region, obtaining chromium material thermo-optic electrode structure (as illustrated in figure 10e).
3rd step, prepare positive and negative electrode top layer gold thin film, see Figure 11:
The substrate being coated with chromium thermo-optical electrode step 2.6 prepared repeats second step related process, obtains the gold thin film being covered in positive and negative electrode.
The invention is not restricted to above-mentioned embodiment, described device main body also can be two-dimensional medium rod structure, photonic crystal elements also can be track type post or ellipse, hexagon, the structure such as square, and lattice arrangements can be triangular crystal lattice structure, tetragonal structure or honeycomb etc.And photonic crystal slow optical wave guide can be the 2 D photon crystal slow optical wave guide such as W2 type, W3 type.Optical waveguide also can be other type of optical waveguide such as ridge waveguide.Chip branch road can be 2 tunnels, 4 tunnels, 8 tunnels etc., and arrangement mode also can be binary tree structure.Preparing material and be also not limited to SOI material, can be silicon nitride material etc.Therefore, every any simple deformation made on the claims in the present invention 1 technical scheme basis all the invention is intended to the row of protection domain.
Claims (10)
1. the light beam based on thermo-optic modulation forms a network chip, it is characterized in that: be formed by stacking successively by layer-of-substrate silicon (4) from bottom to top, buried layer of silicon dioxide (2), light wave conducting structure layer and thermo-optic modulation structural sheet;
Described light wave conducting structure layer, comprises incident coupling grating block (10), incidence end light wave guide (9), the first photonic crystal slow optical wave guide (7), the first exit end light wave guide (17), the first outgoing coupling grating block (11), the second photonic crystal slow optical wave guide (8), the second exit end light wave guide (18), the second outgoing coupling grating block (16) and thermo-optic modulation structural sheet substrate bulk (15); Wherein, the output terminal of coupled light grating block (10) is connected with the input end of incidence end light wave guide (9); The output terminal of incidence end light wave guide (9) is connected with the input end of the first photonic crystal slow optical wave guide (7), the input end of the second photonic crystal slow optical wave guide (8) respectively; The output terminal of the first photonic crystal slow optical wave guide (7) is connected through the input end of the first exit end light wave guide (17) with the first outgoing coupling grating block (11); The output terminal of the second photonic crystal slow optical wave guide (8) is connected through the input end of the second exit end light wave guide (18) with the second outgoing coupling grating block (16); In the outside of the first photonic crystal slow optical wave guide (7), between the first photonic crystal slow optical wave guide (7) and the second photonic crystal slow optical wave guide (8), the outside of the second photonic crystal slow optical wave guide (8) is equipped with thermo-optic modulation structural sheet substrate bulk (15);
Described light wave conducting structure layer, comprises back-shaped thermo-optical electrode (12), negative electrode block (13) and positive electrode block (14); Wherein, the thermo-optic modulation structural sheet substrate bulk (15) of the first photonic crystal slow optical wave guide (7) both sides is provided with a pair back-shaped thermo-optical electrode (12); The thermo-optic modulation structural sheet substrate bulk (15) of the second photonic crystal slow optical wave guide (8) both sides is provided with another to back-shaped thermo-optical electrode (12); One end of aforementioned four back-shaped thermo-optical electrodes (12) all links together with negative electrode block (13), and the other end of described back-shaped thermo-optical electrode (12) is connected with a positive electrode block (14) respectively; Described negative electrode block (13) and positive electrode block (14) are all arranged in thermo-optic modulation structural sheet substrate bulk (15).
2. a kind of light beam based on thermo-optic modulation forms network chip as claimed in claim 1, it is characterized in that: the time-delay generator part that the first photonic crystal slow optical wave guide (7) and the second photonic crystal slow optical wave guide (8) are beam-forming network chip.
3. photonic crystal thermo-optic modulation beam-forming network chip as claimed in claim 1, it is characterized in that: the first photonic crystal slow optical wave guide (7) and the second photonic crystal slow optical wave guide (8) are rectangular blocks, be provided with in the first photonic crystal slow optical wave guide (7) and the second photonic crystal slow optical wave guide (8) and arrange airport (19) in array.
4. photonic crystal thermo-optic modulation beam-forming network chip as claimed in claim 3, is characterized in that: the first photonic crystal slow optical wave guide (7) and the second photonic crystal slow optical wave guide (8) are formed by photonic crystal; The structure of described photonic crystal is triangular crystal lattice structure, and the structural cycle a of photonic crystal is 460nm; First photonic crystal slow optical wave guide (7) is made up of the capable waveguide of bar of more than 9; The width w of the capable waveguide of described bar is 450nm, and the waveguide of every rule row is provided with the airport (19) of more than 12; The radius r of described airport (19) is 173nm, and the spacing of adjacent two airports (19) is 30nm;
The structure of described second photonic crystal slow optical wave guide (8) is identical with the structure of the first photonic crystal slow optical wave guide (7).
5. photonic crystal thermo-optic modulation beam-forming network chip as claimed in claim 1, is characterized in that: be equipped with at the end face of negative electrode block (13) and the end face of positive electrode block (14) gold foil film (6) that a layer thickness is 100nm.
6. photonic crystal thermo-optic modulation beam-forming network chip as claimed in claim 1, is characterized in that: the first photonic crystal slow optical wave guide (7) and the second photonic crystal slow optical wave guide (8) are W1 type photonic crystal straight wave guide.
7. photonic crystal thermo-optic modulation beam-forming network chip as claimed in claim 1, it is characterized in that: the height of light wave conducting structure layer and thermo-optic modulation structural sheet is 0.22 μm, the thickness of buried layer of silicon dioxide (2) is 3 μm, and the thickness of layer-of-substrate silicon (4) is 600 μm.
8. photonic crystal thermo-optic modulation beam-forming network chip as claimed in claim 1, is characterized in that: between coupled light grating block (10) with incidence end light wave guide (9), between the first exit end light wave guide (17) with the first outgoing coupling grating block (11), between the second exit end light wave guide (18) with the second outgoing coupling grating block (16), coupled light grating block (10), the first outgoing coupling grating block (11), the second outgoing coupling grating block (16) be connected with all adopting grating coupling scheme between external fiber.
9. photonic crystal thermo-optic modulation beam-forming network chip as claimed in claim 1, is characterized in that: layer-of-substrate silicon (4), buried layer of silicon dioxide (2) and, light wave conducting structure layer is that one piece of SOI materials processing forms; The material of back-shaped thermo-optical electrode (12), negative electrode block (13) and positive electrode block (14) is chromium, and thickness is 200nm.
10. the preparation method of photonic crystal thermo-optic modulation beam-forming network chip as claimed in claim 1, is characterized in that: carry out as follows:
Step 1, get one piece of SOI substrate, prepared the structure of photonic crystal slow optical wave guide, optical waveguide and coupling grating by photoetching process thereon;
Step 2, by thermal evaporation process, the SOI substrate of completing steps 1 is prepared the thermo-optical electrode of chromium material;
Step 3, by thermal evaporation process, prepare positive and negative electrode Pad top layer gold thin film at the suprabasil thermo-optical electrode surface of the SOI of completing steps 2.
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