CN209373098U - Multilayer material phased-array laser radar transmitting chip and laser radar - Google Patents
Multilayer material phased-array laser radar transmitting chip and laser radar Download PDFInfo
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- CN209373098U CN209373098U CN201821960151.1U CN201821960151U CN209373098U CN 209373098 U CN209373098 U CN 209373098U CN 201821960151 U CN201821960151 U CN 201821960151U CN 209373098 U CN209373098 U CN 209373098U
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- 239000000463 material Substances 0.000 title claims abstract description 277
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 215
- 239000010703 silicon Substances 0.000 claims abstract description 215
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 214
- 230000003287 optical effect Effects 0.000 claims abstract description 62
- 230000008878 coupling Effects 0.000 claims abstract description 22
- 238000010168 coupling process Methods 0.000 claims abstract description 22
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- 239000010410 layer Substances 0.000 description 167
- 238000004519 manufacturing process Methods 0.000 description 25
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
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- 238000010438 heat treatment Methods 0.000 description 6
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
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- 230000005540 biological transmission Effects 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
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- 238000005452 bending Methods 0.000 description 2
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- 229910052581 Si3N4 Inorganic materials 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Abstract
The utility model embodiment provides a kind of multilayer material phased-array laser radar transmitting chip and laser radar, the multilayer material phased-array laser radar transmitting chip, it include: the first material structure layer, SOI silicon waveguiding structure layer and the structure that is of coupled connections, the first material structure layer includes: input coupler and beam splitter；Input coupler and beam splitter carry out optical path connection；Beam splitter passes through structure and the progress optical path connection of SOI silicon waveguiding structure layer of being of coupled connections；Input coupler, for that will input optically coupling to chip；Beam splitter, for being split to the light wave being coupled on chip；Be of coupled connections structure, for Shu Guangbo every after beam splitting to be coupled in the corresponding silicon waveguide of SOI silicon waveguiding structure layer；Wherein, the nonlinear factor of the first material in the first material structure layer is lower than the nonlinear factor of silicon, and the first material is the material mutually compatible with CMOS technology.So that the optical power being input in transmitting chip greatly improves.
Description
Technical field
The utility model embodiment is related to Radar Technology field more particularly to a kind of multilayer material phased-array laser radar hair
Core shooting piece and laser radar.
Background technique
The concept of phased-array laser radar is suggested already, and a variety of different design schemes are also constantly being carried out.Current
Phased-array laser radar chip is all made of SOI material as substrate, and makes various on piece structures using the superperformance of silicon, from
And realize the basic function of laser radar.
But the problem of silicon also has its own, since silicon is a kind of material of strong nonlinearity, especially it is with very strong double
Photonic absorption effect and free-carrier Absorption effect, and its lower order nonlinear coefficient is also very big, and this makes powerful light
It is difficult to carry out low-loss transmission in silicon waveguide, causes to strongly limit the light for being input to phased-array laser radar transmitting chip
Power brings very big pressure to seriously affect the detection performance of laser radar for back end signal probe portion.
Utility model content
The utility model embodiment provides a kind of multilayer material phased-array laser radar transmitting chip and laser radar, solves
The power limit problem of phased-array laser radar chip in the prior art, so that being input to phased-array laser radar transmitting core
Optical power in piece greatly improves, to greatly improve the detection performance of laser radar, and subtracts for back end signal probe portion
Small very big pressure.
In a first aspect, the utility model embodiment provides a kind of multilayer material phased-array laser radar transmitting chip, comprising:
First material structure layer, SOI silicon waveguiding structure layer and the structure that is of coupled connections, the first material structure layer includes: input coupling
Device and beam splitter；
The input coupler and the beam splitter carry out optical path connection；The beam splitter passes through structure and the institute of being of coupled connections
It states SOI silicon waveguiding structure layer and carries out optical path connection；
The input coupler, for that will input optically coupling to the chip；
The beam splitter, for being split to the light wave being coupled on the chip；
The structure that is of coupled connections, it is corresponding for Shu Guangbo every after beam splitting to be coupled to the SOI silicon waveguiding structure layer
In silicon waveguide；
Wherein, the nonlinear factor of the first material in the first material structure layer is lower than the nonlinear factor of silicon, and
First material is the material mutually compatible with CMOS technology.
Further, multilayer material phased-array laser radar transmitting chip as described above, the SOI silicon waveguiding structure layer
It include: phase-modulator and optical antenna；
The phase-modulator is attached with the optical antenna by silicon waveguide；
The phase-modulator, for changing the phase of the light wave for each silicon waveguide for being coupled to the SOI silicon waveguiding structure layer
Position；
The optical antenna emits for the light wave to the change phase in each silicon waveguide into space.
Further, multilayer material phased-array laser radar transmitting chip as described above, the first material structure layer
Positioned at the top of the SOI silicon waveguiding structure layer, used between the first material structure layer and the SOI silicon waveguiding structure layer
Second material layer separates；
Wherein, the refractive index of the second material layer is lower than the first material structure layer and the SOI silicon waveguiding structure
The refractive index of layer.
Further, multilayer material phased-array laser radar transmitting chip as described above, the structure packet that is of coupled connections
It includes: the first material coupled waveguide and silicon coupled waveguide；
The first material coupled waveguide is connected to the rear end of the first material waveguide of the beam splitter, the silicon coupled wave
Lead the front end for being connected to the silicon waveguide of the SOI silicon waveguiding structure layer；
The first material coupled waveguide and the silicon coupled waveguide are respectively wedge structure, the first material coupled wave
Lead, and the view field of the first material coupled waveguide and the silicon coupled waveguide opposite with the tip of the silicon coupled waveguide
It is mutually overlapping.
Further, multilayer material phased-array laser radar transmitting chip as described above, the first material coupled wave
Leading with the tip width of silicon coupled waveguide is 100~300nm；
Of same size, the silicon coupling of first material waveguide of the rear width and beam splitter of the first material coupled waveguide
The rear width of waveguide is of same size with the silicon waveguide of the SOI silicon waveguiding structure layer；
Mutually overlapping zone length is 10~100um.
Further, multilayer material phased-array laser radar transmitting chip as described above, the first material structure layer
Further include: the first material trunk waveguide；
The input coupler carries out optical path connection by the first material trunk waveguide and the beam splitter.
Second aspect, the utility model embodiment provide a kind of phased-array laser radar, including as above-mentioned first aspect is appointed
Multilayer material phased-array laser radar transmitting chip described in one.
The utility model embodiment provides a kind of multilayer material phased-array laser radar transmitting chip and laser radar, this is more
Layer material phased-array laser radar transmitting chip, comprising: the first material structure layer, SOI silicon waveguiding structure layer and the knot that is of coupled connections
Structure, the first material structure layer includes: input coupler and beam splitter；Input coupler and beam splitter carry out optical path connection；Beam splitting
Device passes through structure and the progress optical path connection of SOI silicon waveguiding structure layer of being of coupled connections；Input coupler, for will input optically coupling to
On chip；Beam splitter, for being split to the light wave being coupled on chip；Be of coupled connections structure, is used for beam every after beam splitting
Light wave is coupled in the corresponding silicon waveguide of SOI silicon waveguiding structure layer；Wherein, the first material in the first material structure layer is non-thread
Property coefficient is lower than the nonlinear factor of silicon, and the first material is the material mutually compatible with CMOS technology, due to the first material structure
The nonlinear factor of first material of layer is lower than the nonlinear factor of silicon, so the input coupler energy in the first material structure layer
It is enough that high-power light wave is coupled on chip, light wave is being divided by several pieces by beam splitter, is reducing every first material waveguide
In optical power, so that the optical power in each first material waveguide is can satisfy the normal transmission in silicon waveguide, so that defeated
Enter to the optical power in multilayer material phased-array laser radar transmitting chip and greatly improve, to greatly improve laser radar
Detection performance, and very big pressure is reduced for back end signal probe portion.
It should be appreciated that content described in above-mentioned utility model content part is not intended to limit the reality of the utility model
The key or important feature of example are applied, it is also non-for limiting the scope of the utility model.The other feature of the utility model will pass through
Description below is easy to understand.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is
Some embodiments of the utility model, for those of ordinary skill in the art, in the premise of not making the creative labor property
Under, it is also possible to obtain other drawings based on these drawings.
Fig. 1 is the structural representation for the multilayer material phased-array laser radar transmitting chip that the utility model embodiment one provides
Figure；
Fig. 2 is the structural representation for the multilayer material phased-array laser radar transmitting chip that the utility model embodiment two provides
Figure；
It is of coupled connections in the multilayer material phased-array laser radar transmitting chip that Fig. 3 provides for the utility model embodiment three
The structural schematic diagram of structure；
Fig. 4 is the production method for the multilayer material phased-array laser radar transmitting chip that the utility model embodiment six provides
Flow chart；
Fig. 5 is the production method for the multilayer material phased-array laser radar transmitting chip that the utility model embodiment seven provides
Flow chart；
Fig. 6 is the structural schematic diagram of the SOI substrate in the utility model embodiment seven；
Fig. 7 is the production method for the multilayer material phased-array laser radar transmitting chip that the utility model embodiment seven provides
Structural schematic diagram after executing step 501；
Fig. 8 is the production method for the multilayer material phased-array laser radar transmitting chip that the utility model embodiment seven provides
Structural schematic diagram after executing step 503；
Fig. 9 is the production method for the multilayer material phased-array laser radar transmitting chip that the utility model embodiment seven provides
Structural schematic diagram after executing step 504；
Figure 10 is the production side for the multilayer material phased-array laser radar transmitting chip that the utility model embodiment seven provides
Method executes the structural schematic diagram after step 505；
Figure 11 is the production side for the multilayer material phased-array laser radar transmitting chip that the utility model embodiment seven provides
Method executes the structural schematic diagram after step 507；
Figure 12 is the production side for the multilayer material phased-array laser radar transmitting chip that the utility model embodiment seven provides
Method executes the structural schematic diagram after step 509；
Figure 13 is the production side for the multilayer material phased-array laser radar transmitting chip that the utility model embodiment seven provides
Method executes the structural schematic diagram after step 511.
Appended drawing reference
The first area 1- substrate silicon layer 2- buries oxide layer 21- top silicon layer 3-SOI silicon waveguiding structure layer 30- 31- phase
Position modulator 32- optical antenna 4- the first material structure layer 40- second area 41- input coupler 42- beam splitter 5-
The structure that is of coupled connections 51- the first material coupled waveguide 52- silicon coupled waveguide 6- second material layer 7- grating layer 8- optical isolation
Layer 9- electrode 10- thermode 11- metal lead wire 12- protective layer 13- electrode window through ray 14- grating window
Specific embodiment
The embodiments of the present invention are more fully described below with reference to accompanying drawings.Although showing that this is practical new in attached drawing
The some embodiments of type, it should be understood that, the utility model can be realized by various forms, and should not be by
It is interpreted as being limited to embodiments set forth here, providing these embodiments on the contrary is in order to more thorough and be fully understood by practical
It is novel.It should be understood that the being given for example only property of accompanying drawings and embodiments of the utility model acts on, it is not intended to limit practical
Novel protection scope.
The specification and claims of the utility model embodiment and term " first " in above-mentioned attached drawing, " second ",
The (if present)s such as " third ", " the 4th " are to be used to distinguish similar objects, without specific sequentially or successive for describing
Order.It should be understood that the data used in this way are interchangeable under appropriate circumstances, so as to the utility model described herein implementation
Such as it can be performed in other sequences than those illustrated or described herein.In addition, term " includes " and " having " with
And their any deformation, it is intended that cover and non-exclusive include.
Fig. 1 is the structural representation for the multilayer material phased-array laser radar transmitting chip that the utility model embodiment one provides
Figure.As shown in Figure 1, multilayer material phased-array laser radar transmitting chip provided in this embodiment includes: the first material structure layer
4, SOI silicon waveguiding structure layer 3 and the structure 5 that is of coupled connections, the first material structure layer 4 include: input coupler 41 and beam splitter 42.
Wherein, input coupler 41 and beam splitter 42 carry out optical path connection；Beam splitter 42 by be of coupled connections structure 5 with
SOI silicon waveguiding structure layer 3 carries out optical path connection.
Specifically, input coupler 41, for that will input optically coupling to chip.Beam splitter 42, for being coupled to core
The light wave of on piece is split.The structure that is of coupled connections 5, for Shu Guangbo every after beam splitting to be coupled to 3 pairs of layer of SOI silicon waveguiding structure
In the silicon waveguide answered.
Wherein, the nonlinear factor of the first material in the first material structure layer 4 is lower than the nonlinear factor of silicon, and first
Material is the material mutually compatible with CMOS technology.
Wherein, nonlinear factor is lower order nonlinear coefficient.Lower order nonlinear coefficient can also be the first rank nonlinear system
Number, second-order nonlinear factor, third-order nonlinear optical coefficient etc..
Specifically, in the present embodiment, multilayer material phased-array laser radar transmitting chip, which is integrated in, a piece of meets CMOS work
In the SOI substrate of skill.The SOI substrate includes: substrate silicon layer 1, buries oxide layer 2 and top silicon layer 21 from the bottom to top.The present embodiment
In to each layer of the material and thickness of SOI substrate with no restriction.Every layer of material and thickness can be such as carried out according to different needs
The customization of degree can also use the SOI substrate product of conventional criteria CMOS technology, if 1 material of substrate silicon layer is silicon, with a thickness of
500~600um, the material of buries oxide layer 2 are silica, and with a thickness of 2um, the material of top silicon layer 21 is silicon, with a thickness of
220nm or 340nm.
In order to express easily, in the following embodiments, all real to collect cost with the SOI substrate of above-mentioned standard CMOS process
With the multilayer material phased-array laser radar transmitting chip of new embodiment, wherein top silicon layer 21 with a thickness of 220nm.
In the present embodiment, since silicon has very big lower order nonlinear coefficient, and silicon materials have very strong two-photon
Sink effect and free-carrier Absorption effect, so the optical power very little for usually allowing to transmit in silicon waveguide, normally about
100mw.This makes conventional pure silicon base phased array Laser emission chip cannot achieve the chip processing and transmitting of high power laser,
The Effect on Detecting of laser radar is seriously affected.
In order to solve problem above, a kind of first material structure layer lower than the nonlinear factor of silicon is used in the present embodiment
4, including the first material waveguide of variform in the first material structure layer 4, constitute input coupler 41 and beam splitter 42.It should
The first material in first material structure layer 4 is mutually compatible with CMOS technology.First material can be the classes such as silicon nitride, silicon oxynitride
Silicon materials.Wherein, the input coupler 41 in the first material structure layer 4 can will be big for light wave to be coupled to chip
Power input optical coupling is into the first material structure layer 4, since the first material structure layer 4 has relatively low refractive index, so that
The size of the silicon input coupler 41 of the input coupler 41 of first material than in the prior art is big, it is possible to substantially reduce defeated
Enter the spot size of coupler 41 and the mismatch of optical fiber facula size, can effectively improve coupling efficiency.First material it is defeated
Entering coupler 41 may be implemented the higher coupling efficiency of silicon input coupler 41 than in the prior art.And the first material is not easy
By the influence of two-photon absorption effect and Carriers Absorption effect, 1 rank nonlinear factor is smaller than silicon close to 20 times, this makes
Obtaining can be with the light wave of the much higher power of transfer ratio silicon waveguide in the waveguide of the first material structure layer 4.
In the present embodiment, beam splitter 42 is for being split the light wave being coupled on chip, so being coupled into input coupling
The light wave of clutch 41 is divided into several pieces light wave after beam splitter 42, so that the every first material wave after 42 beam splitting of beam splitter
There are many optical power down in leading.After light wave is divided into enough parts, the optical power of every portion be can satisfy in silicon waveguide
Every Shu Guangbo is coupled in the corresponding silicon waveguide of SOI silicon waveguiding structure layer 3 by being of coupled connections structure 5 after normal transmission.
Multilayer material phased-array laser radar transmitting chip provided in this embodiment, comprising: the first material structure layer 4, SOI
Silicon waveguiding structure layer 3 and the structure 5 that is of coupled connections, the first material structure layer 4 includes: input coupler 41 and beam splitter 42；Input
Coupler 41 and beam splitter 42 carry out optical path connection；Beam splitter 42 by be of coupled connections structure 5 and SOI silicon waveguiding structure layer 3 into
The connection of row optical path；Input coupler 41, for that will input optically coupling to chip；Beam splitter 42, for being coupled to chip
Light wave be split；The structure that is of coupled connections 5, it is corresponding for Shu Guangbo every after beam splitting to be coupled to SOI silicon waveguiding structure layer 3
In silicon waveguide；Wherein, the nonlinear factor of the first material in the first material structure layer 4 is lower than the nonlinear factor of silicon, and the
One material is the material mutually compatible with CMOS technology, since the nonlinear factor of the first material of the first material structure layer 4 is lower than
The nonlinear factor of silicon, so high-power light wave can be coupled to chip by the input coupler 41 in the first material structure layer 4
On, light wave is being divided by several pieces by beam splitter 42, the optical power in every first material waveguide is being reduced, makes each first material
Optical power in material waveguide can satisfy the normal transmission in silicon waveguide, so that being input to multilayer material phased-array laser thunder
It greatly improves up to the optical power in transmitting chip, to greatly improve the detection performance of laser radar, and is visited for back end signal
It surveys part and reduces very big pressure.
Further, as shown in Figure 1, in multilayer material phased-array laser radar transmitting chip provided in this embodiment, SOI
Silicon waveguiding structure layer 3 includes: phase-modulator 31 and optical antenna 32.
Wherein, phase-modulator 31 is attached with optical antenna 32 by silicon waveguide.
Specifically, phase-modulator 31, for changing the light wave of each silicon waveguide for being coupled to SOI silicon waveguiding structure layer 3
Phase.Optical antenna 32 emits for the light wave to the change phase in each silicon waveguide into space.
In the present embodiment, phase-modulator 31 and optical antenna 32 pass through silicon waveguide progress optical path connection.Phase-modulator
31, by forming electrode with each silicon waveguide, by adding current or voltage to make partially, regulate and control the refractive index of silicon waveguide, and then change each
The phase of light wave in waveguide.Light wave in each silicon waveguide is arrived after mixing up phase by phase-modulator 31 by silicon waveguide transmission
Transmitting is into space in optical antenna 32.
Multilayer material phased-array laser radar transmitting chip provided in this embodiment is wrapped by SOI silicon waveguiding structure layer 3
Include: phase-modulator 31 and optical antenna 32, phase-modulator 31 are attached with optical antenna 32 by silicon waveguide；Phase tune
Device 31 processed, for changing the phase of the light wave for each silicon waveguide for being coupled to SOI silicon waveguiding structure layer 3；Optical antenna 32, for pair
The light wave of change phase in each silicon waveguide emits into space, can will enter into the transmitting of multilayer material phased-array laser radar
Powerful input light emitting in chip is into space, to greatly improve the detection performance of laser radar, and is rear end
Signal detection part reduces very big pressure.
Embodiment two
Fig. 2 is the structural representation for the multilayer material phased-array laser radar transmitting chip that the utility model embodiment two provides
Figure, as shown in Fig. 2, control battle array laser radar transmitting chip provided in this embodiment is in the more of the offer of the utility model embodiment one
On the basis of layer material phased-array laser radar transmitting chip, further includes: second material layer 6.
Further, in this embodiment the first material structure layer 4 is located at the top of SOI silicon waveguiding structure layer 3, the first material
It is separated between material structure sheaf 4 and SOI silicon waveguiding structure layer 3 using second material layer 6.
Wherein, the refractive index of second material layer 6 is lower than the refraction of the first material structure layer 4 and SOI silicon waveguiding structure layer 3
Rate.
Specifically, in the present embodiment, using than the first material between the first material structure layer 4 and SOI silicon waveguiding structure layer 3
The all low second material layer 6 of the refractive index of structure sheaf 4 and SOI silicon waveguiding structure layer 3 separates.The second material layer 6 and CMOS work
Skill is compatible.Such as second material layer 6 can be silicon dioxide layer.In the present embodiment, the thickness of second material layer 6 and the phased array
The operation wavelength of Laser emission chip is corresponding.Thickness is about the quotient of a quarter operation wavelength Yu the second Refractive Index of Material.If
The operation wavelength of phased-array laser transmitting chip is 1.5~1.6um, then 6 thickness of second material layer is set as 50~500nm.
Embodiment three
It is of coupled connections in the multilayer material phased-array laser radar transmitting chip that Fig. 3 provides for the utility model embodiment three
The structural schematic diagram of structure 5 is top view of the Fig. 2 along the direction A, as shown in figure 3, in the present embodiment, the first material coupled wave
The rear end for the first material waveguide that 51 are connected to beam splitter 42 is led, silicon coupled waveguide 52 is connected to the silicon of SOI silicon waveguiding structure layer 3
The front end of waveguide.
Specifically, the first material coupled waveguide 51 and silicon coupled waveguide 52 are respectively wedge structure, the first material coupled wave
It is opposite with the tip of silicon coupled waveguide 52 to lead 51, and the view field of the first material coupled waveguide 51 and silicon coupled waveguide 52 is mutual
It is overlapping.
In practical application, which is mutually overlapping wedge structure, the first material coupled waveguide 51 and silicon
There is second material layer 6, the tip of two wedge structures is opposite between coupled waveguide 52.First material coupled waveguide 51 and silicon coupling
Multiplex leads 52 and reduces by wedge structure the limitation to light wave in waveguide, thus by evanescent waves coupling principle, by light wave from
First material coupled waveguide 51 is coupled in silicon coupled waveguide 52.
Wherein, the tip width of the first material coupled waveguide 51 and silicon coupled waveguide 52 can pass through manufacture craft and processing essence
Degree determines.Preferably, in the present embodiment, the tip width of the first material coupled waveguide 51 and silicon coupled waveguide 52 is 100~
300nm。
Preferably, in the present embodiment, the rear width of the first material coupled waveguide 51 and the first material wave of beam splitter 42
That leads is of same size, and the rear width of silicon coupled waveguide 52 is of same size with the silicon waveguide of SOI silicon waveguiding structure layer 3.I.e.
The rear width of one material coupled waveguide 51 and silicon coupled waveguide 52 is the of same size of waveguide connected to it.
Optionally, in the present embodiment, the width of the first material waveguide of beam splitter 42 is 800nm~1um, then the first material
The rear width of coupled waveguide 51 is 800nm~1um.The silicon duct width of SOI silicon waveguiding structure layer 3 is 400nm~500nm,
Then the rear width of silicon coupled waveguide 52 is 400nm~500nm.
Preferably, in the present embodiment, mutually overlapping zone length is 10~100um.That is the first material coupled waveguide 51
It is 10~100um with zone length mutually overlapping in the view field of silicon coupled waveguide 52.
Multilayer material phased-array laser radar transmitting chip provided in this embodiment, the structure that is of coupled connections 5 include: the first material
Expect coupled waveguide 51 and silicon coupled waveguide 52；After first material coupled waveguide 51 is connected to the first material waveguide of beam splitter 42
End, silicon coupled waveguide 52 are connected to the front end of the silicon waveguide of SOI silicon waveguiding structure layer 3；First material coupled waveguide 51 and silicon coupling
It is respectively wedge structure that multiplex, which leads 52, and the first material coupled waveguide 51 is opposite with the tip of silicon coupled waveguide 52, and the first material
The view field of coupled waveguide 51 and silicon coupled waveguide 52 is mutually overlapping.And by the first material coupled waveguide 51 and silicon coupled wave
52 tip width is led, the preset range that rear width and mutually overlapping zone length are contoured to correspond to can be effectively by light
Wave is coupled in silicon waveguide from the first material waveguide, can be realized the coupling efficiency of 0-100%.
Example IV
The base for the multilayer material phased-array laser radar transmitting chip that the present embodiment is provided in the utility model embodiment three
Further refinement on plinth, to the first material structure layer and SOI silicon waveguiding structure layer.Then multilayer material phase provided in this embodiment
Controlling battle array laser radar transmitting chip further includes following scheme.
Further, in this embodiment the first material structure layer further include: the first material trunk waveguide.
Wherein, input coupler 41 carries out optical path connection by the first material trunk waveguide and beam splitter 42.
Preferably, each waveguide in multilayer material phased-array laser radar transmitting chip is the single mode waveguide of TE mould.
Specifically, in the present embodiment, the waveguide in the first material structure layer, the waveguide in SOI silicon waveguiding structure layer and coupling
Close the single mode waveguide that the waveguide in connection structure is TE mould.
Further, in this embodiment input coupler 41 is end coupling device or grating coupler.Beam splitter 42 is grade
Multi-mode interference coupler, star coupler or the directional coupler of connection.
Specifically, it in the present embodiment, may be selected after light wave is coupled to chip by end coupling device or grating coupler, light wave
Multi-mode interference coupler, star coupler or any beam splitter 42 of directional coupler are transferred to by the single mode waveguide of TE mould
In corresponding first material waveguide, after light wave is divided into enough parts, every portion optical power satisfaction normally passes in silicon waveguide
After defeated, the silicon waveguide of SOI silicon waveguiding structure layer 3 can be coupled into from the first material waveguide by being of coupled connections structure 5 for light wave
In.
Further, in this embodiment phase-modulator 31 is electro-optic phase modulator or Thermo-optic phase modulator.
Specifically, electro-optical type phase-modulator or thermal-optical type phase-modulation are used in the present embodiment in phase-modulator 31
Device.Electro-optical type phase modulating structure is to do ion implanting on the silicon plate of silicon waveguide two sides in SOI silicon waveguiding structure layer 3, with
Silicon waveguide, which forms PIN junction or PN junction, can regulate and control the refractive index of silicon when a current passes through, to change in each silicon waveguide
Light wave phase.Top hot type or two sides hot type can be selected in thermal-optical type phase-modulator, i.e., heating electrode is made in
Perhaps by adding electric current or voltage to make partially, the heat that heating electrode generates is transmitted in silicon waveguide for two sides at the top of silicon waveguide, by
It is a kind of very high material of thermo-optical coeffecient in silicon, so being easy to change refractive index in waveguide, and changes the light wave in each waveguide
Phase.It should be noted that, light in meeting absorbing waveguides, to cause larger too close from waveguide in order to avoid heating electrode
Loss, heating electrode need with a certain distance from waveguide, generally higher than 2um.To heating electrode and metal lead wire in the present embodiment
Material without limitation, but the resistivity of general heating electrode is bigger than metal lead wire close to a magnitude.
Multilayer material phased-array laser radar transmitting chip provided in this embodiment, input coupler 41 are end coupling device
Or grating coupler.Beam splitter 42 is cascade multi-mode interference coupler, star coupler or directional coupler, phase-modulation
Device 31 be electro-optic phase modulator or Thermo-optic phase modulator, can make multilayer material phased-array laser radar transmitting chip according to
There are many types for the difference of device, meet a variety of demands.
Further, in this embodiment optical antenna 32 is array grating type optical antenna.
Specifically, in the present embodiment, light wave in each silicon waveguide is mixed up after phase by phase-modulator 31 by silicon waveguide
The transmitting of optical antenna 32 is transferred into space.Optical antenna 32 is that second-order diffraction light is carved in silicon array waveguide in the present embodiment
Grid, i.e. array grating type optical antenna 32.The wherein design parameter of grating, such as screen periods, duty ratio, etching depth, all
It is related to operation wavelength.In the enterprising line raster etching of silicon waveguide, need first to calculate screen periods according to etching depth.In order to obtain
The small far-field divergence angle along silicon wave guide direction and high longitudinal radar scanning resolution ratio are obtained, the second level of optical antenna 32 is designed
Diffraction grating etching depth is shallower, is 20~100nm.Since light-wave band is 1.5~1.6 μm, silicon waveguide array is for this wave
The effective refractive index of section is about 2.38, and obtaining second-order diffraction screen periods according to second-order diffraction grating formula is 600~680nm,
Equably in the enterprising line raster etching of the distance of each screen periods i.e. in silicon waveguide.And the width of grating then by duty ratio Lai
It determines, that is, the ratio of raster width and screen periods.By calculating it is found that second level is spread out at 1.5~1.6 μm of light-wave band
Penetrate grating duty ratio be 0.4~0.6 when, outside radiation efficiency highest.
Since the waveguide spacing of optical antenna 32 decides the maximum scan angle of final phased-array laser transmitting chip, so
In the present embodiment, the silicon waveguide spacing of optical antenna 32 is 500nm~2.5um.Optical antenna 32 to silicon waveguide distribution form not
It limits, can be to be uniformly distributed, or other distribution forms such as Gaussian Profile, Sine distribution.
Further, in this embodiment multilayer material phased-array laser radar transmitting chip further include: protective layer.
Specifically, protective layer is covered on entire multilayer material phased-array laser radar transmitting chip, which is
Low index of refraction protective layer.The material of the low index of refraction protective layer 12 is chosen as silica, and thickness can be 2~5um.
Further, in this embodiment after the electrode of setting multilayer material phased-array laser radar transmitting chip, in electricity
Windowing above the grating of pole and optical antenna, to be powered up the input and output with light.Above the grating of optical antenna 32
Window can reach at distance grating about 2um.
Embodiment five
The utility model embodiment five provides a kind of phased-array laser radar, which includes that this is practical new
Type embodiment one to any of example IV embodiment multilayer material phased-array laser radar transmitting chip.
The structure and function of multilayer material phased-array laser radar transmitting chip in phased-array laser radar in the present embodiment
Core can be emitted with the multilayer material phased-array laser radar of any of the utility model embodiment one to example IV embodiment
The structure and function of piece is identical, and this is no longer going to repeat them.
In the present embodiment, light source can be the laser coupling package outside chip to multilayer material phased-array laser radar and send out
Core shooting on piece is also possible to be bonded in the laser on chip, and the detector of phased-array laser radar can be the spy outside chip
Survey device, or the detector being integrated on chip, the present embodiment are not construed as limiting this.
Embodiment six
Fig. 4 is the production method for the multilayer material phased-array laser radar transmitting chip that the utility model embodiment six provides
Flow chart, as shown in figure 4, the production method of multilayer material phased-array laser radar transmitting chip provided in this embodiment includes
Following steps.
Step 401, the first area above the top layer silicon of SOI substrate forms SOI silicon waveguiding structure layer 3.
Specifically, in the present embodiment, electron beam exposure or the nearly formula photoetching process of step can be used by SOI silicon waveguiding structure layer
Waveguide pattern on 3 is transferred in the top layer silicon of SOI substrate and ICP etching technics is combined to carve SOI silicon waveguide in first area
Structure sheaf 3 can also be used first area of other techniques above the top layer silicon of SOI substrate and form SOI silicon waveguiding structure layer 3,
This is not construed as limiting in the present embodiment.
Wherein, first area be can be rear end in the top layer silicon of SOI substrate.
Step 402, the second area above the top layer silicon of SOI substrate forms the first material structure layer 4, so that the first material
Expect to form the structure 5 that is of coupled connections between the rear end of structure sheaf 4 and the front end of the SOI silicon waveguiding structure layer 3.
Specifically, in the present embodiment, electron beam exposure or the nearly formula photoetching process of step can be used by the first material structure layer 4
Waveguide pattern be transferred on the first material structure layer 4 and ICP etching technics combined in second area to carve the first material structure
Layer 4.Second area of other techniques above the top layer silicon of SOI substrate can also be used and form the first material structure layer 4, this implementation
It is not construed as limiting in example.
Wherein, second area be can be front end in the top layer silicon of SOI substrate.And first area and second area
View field it is mutually overlapping, to form the structure 5 that is of coupled connections.
It is understood that first area can also be located at the front end in the top layer silicon of SOI substrate, correspondingly, the secondth area
Domain can be located at the rear end in the top layer silicon of SOI substrate, and the view field of first area and second area is mutually overlapping, with shape
At the structure 5 that is of coupled connections.
In the present embodiment, the first material structure layer 4 includes: input coupler 41 and beam splitter 42.First material structure layer 4
In front waveguide figure formed input coupler 41, rear waveguide figure formed beam splitter 42.Input coupler 41, being used for will
Light wave is coupled on chip.Beam splitter 42, for being split to the light wave being coupled on chip.
Wherein, the nonlinear factor of the first material in the first material structure layer 4 is lower than the nonlinear factor of silicon, and first
Material is the material mutually compatible with CMOS technology.
In the present embodiment, after forming SOI silicon waveguiding structure layer 3 and the first material structure layer 4, SOI silicon waveguiding structure layer 3
In the first material structure layer 4 no longer same level, SOI silicon waveguiding structure layer 3 can in the lower section of the first material structure layer 4,
SOI silicon waveguiding structure layer 3 can also be in the top of the first material structure layer 4, so that the first material structure layer 4 obtains 42 rear end of beam splitter
The structure 5 that is of coupled connections is formed between the front end of SOI silicon waveguiding structure layer 3.
Wherein, the structure that is of coupled connections includes: the first material coupled waveguide and silicon coupled waveguide.First material coupled waveguide connects
It connects in the rear end of the first material waveguide of beam splitter, before silicon coupled waveguide is connected to the silicon waveguide of SOI silicon waveguiding structure layer 3
End.First material coupled waveguide and silicon coupled waveguide are respectively wedge structure, the first material coupled waveguide and silicon coupled waveguide
Tip is opposite, and the view field of the first material coupled waveguide and silicon coupled waveguide is mutually overlapping.
The production method of multilayer material phased-array laser radar transmitting chip provided in this embodiment can make practical
Multilayer material phased-array laser radar transmitting chip in new embodiment one, multilayer material phased-array laser radar transmitting chip
Structure and function be the same as example 1, this is no longer going to repeat them.
Embodiment seven
Fig. 5 is the production method for the multilayer material phased-array laser radar transmitting chip that the utility model embodiment seven provides
Flow chart, as shown in figure 5, the production method of multilayer material phased-array laser radar transmitting chip provided in this embodiment is in reality
On the basis of the production method for applying the multilayer material phased-array laser radar transmitting chip of the offer of example one, to step 401- step
402 further refinement, and further comprise other steps, then multilayer material phased-array laser radar provided in this embodiment is sent out
The production method of core shooting piece includes the following steps.
Step 501, the first area above the top layer silicon of SOI substrate forms SOI silicon waveguiding structure layer 3.
Further, in this embodiment Fig. 6 is the structural schematic diagram of the SOI substrate in the utility model embodiment seven, figure
The production method of the 7 multilayer material phased-array laser radar transmitting chips provided for the utility model embodiment seven executes step
Structural schematic diagram after 501, as shown in fig. 7, being turned first wave guide figure using electron beam exposure or the nearly formula photoetching process of step
It moves on in the top layer silicon of SOI substrate and ICP etching technics is combined to carve SOI silicon waveguiding structure layer 3 in first area 30.
Wherein, first area 30 is the back-end region above the top layer silicon of SOI substrate.
Step 502, ion implanting is carried out in the phase-modulation region of SOI silicon waveguiding structure layer 3, forms PN junction or PIN junction,
To make phase-modulator 31.
Wherein, first area 30 includes phase-modulation region, and phase-modulation region is located at the front end of first area 30.
Step 503, raster graphic is transferred to the top layer of SOI substrate using electron beam exposure or the nearly formula photoetching process of step
Grating layer 7 is carved on silicon and in conjunction with ICP etching technics, to make optical antenna 32.
Fig. 8 is the production method for the multilayer material phased-array laser radar transmitting chip that the utility model embodiment seven provides
Structural schematic diagram after executing step 503, as shown in figure 8, grating layer 7 is located at the rear end of first area 30.
Wherein, waveguide pattern of the first wave guide figure constitution in SOI silicon waveguiding structure layer 3.In SOI silicon waveguiding structure layer
3 front end is the silicon waveguide connecting with the structure 5 that is of coupled connections, and silicon waveguide increases silicon in phase-modulation region by bending silicon waveguide
Waveguide separation is thermally isolated or is electrically isolated to realize, finally reaches 32 region waveguide of optical antenna, wave using bending silicon waveguide
It leads interval and is decreased to 500nm~2.5um.
Step 504, second material layer 6 is grown on chip using pecvd process, the refractive index of second material layer 6 is lower than
The refractive index of first material structure layer 4 and SOI silicon waveguiding structure layer 3.
Fig. 9 is the production method for the multilayer material phased-array laser radar transmitting chip that the utility model embodiment seven provides
Structural schematic diagram after executing step 504, as shown in figure 9, being used between the first material structure layer 4 and SOI silicon waveguiding structure layer 3
Second material layer 6 separates, and the second material layer 6 is compatible with CMOS technology.Such as second material layer 6 can be silicon dioxide layer.
Step 505, using pecvd process, second area grows first material layer above second material layer 6.
Figure 10 is the production side for the multilayer material phased-array laser radar transmitting chip that the utility model embodiment seven provides
Method executes the structural schematic diagram after step 505, and as shown in Figure 10, second area 40 is the rear end above second material layer 6
Region.
Step 506, using electron beam exposure or the nearly formula photoetching process of step by second waveguide pattern transfer to the first material
On layer and ICP etching technics is combined to make the first material structure layer 4 in second area.
Wherein, waveguide pattern of the second waveguide figure constitution in the first material structure layer.
Further, in this embodiment being located at the top of SOI silicon waveguiding structure layer 3 in the first material structure layer 4.
Step 507, optical confinement layer 8 is grown on chip using pecvd process.
Figure 11 is the production side for the multilayer material phased-array laser radar transmitting chip that the utility model embodiment seven provides
Method executes the structural schematic diagram after step 507, and as shown in figure 11, optical confinement layer 8 covers on entire chip.
Wherein, the material of optical confinement layer 8 can be earth silicon material.
Step 508, SOI silicon waveguide junction is led to using the through-hole that ICP etching technics carves thermode and electrode corresponding position
Structure layer 3.
Step 509, metal material and electrode matel material are heated using magnetron sputtering or thermal evaporation process length and passed through
Photoetching process carves thermode 10, metal lead wire 11 and electrode 9.
Figure 12 is the production side for the multilayer material phased-array laser radar transmitting chip that the utility model embodiment seven provides
Method executes the structural schematic diagram after step 509, as shown in figure 12, in the present embodiment, the material of thermode 10 and metal lead wire 11
It is not construed as limiting, the resistivity of thermode 10 can be more order of magnitude greater than the resistivity of metal lead wire 11.
Step 510, using pecvd process on chip growth protecting layer 12.
Wherein, the material of protective layer 12 can be silica.
Step 511, electrode window through ray 13 and grating window 14 are carved using ICP etching technics.
Figure 13 is the production side for the multilayer material phased-array laser radar transmitting chip that the utility model embodiment seven provides
Method executes the structural schematic diagram after step 511, and as shown in figure 13, protective layer 12 is covered on entire chip, and electrode window through ray 13
Above electrode, grating window 14 is located above grating.
The production method of multilayer material phased-array laser radar transmitting chip provided in this embodiment can make practical
Multilayer material phased-array laser radar transmitting chip in new embodiment four, wherein the multilayer material in the present embodiment is phased
Multilayer material phased-array laser radar transmitting chip in the structure and function and example IV of battle array laser radar transmitting chip
Structure and function is identical, and this is no longer going to repeat them.
Finally, it should be noted that the above various embodiments is only to illustrate the technical solution of the utility model, rather than it is limited
System；Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should
Understand: it is still possible to modify the technical solutions described in the foregoing embodiments, or to some or all of
Technical characteristic is equivalently replaced；And these are modified or replaceed, it does not separate the essence of the corresponding technical solution, and this is practical new
The range of each embodiment technical solution of type.
Claims (7)
1. a kind of multilayer material phased-array laser radar transmitting chip characterized by comprising the first material structure layer, SOI silicon
Waveguiding structure layer and the structure that is of coupled connections, the first material structure layer includes: input coupler and beam splitter；
The input coupler and the beam splitter carry out optical path connection；The beam splitter by be of coupled connections structure with it is described
SOI silicon waveguiding structure layer carries out optical path connection；
The input coupler, for that will input optically coupling to the chip；
The beam splitter, for being split to the light wave being coupled on the chip；
The structure that is of coupled connections, for Shu Guangbo every after beam splitting to be coupled to the corresponding silicon wave of the SOI silicon waveguiding structure layer
In leading；
Wherein, the nonlinear factor of the first material in the first material structure layer is lower than the nonlinear factor of silicon, and described
First material is the material mutually compatible with CMOS technology.
2. multilayer material phased-array laser radar transmitting chip according to claim 1, which is characterized in that the SOI silicon
Waveguiding structure layer includes: phase-modulator and optical antenna；
The phase-modulator is attached with the optical antenna by silicon waveguide；
The phase-modulator, for changing the phase of the light wave for each silicon waveguide for being coupled to the SOI silicon waveguiding structure layer；
The optical antenna emits for the light wave to the change phase in each silicon waveguide into space.
3. multilayer material phased-array laser radar transmitting chip according to claim 1, which is characterized in that first material
Material structure sheaf is located at the top of the SOI silicon waveguiding structure layer, the first material structure layer and the SOI silicon waveguiding structure layer
Between separated using second material layer；
Wherein, the refractive index of the second material layer is lower than the first material structure layer and the SOI silicon waveguiding structure layer
Refractive index.
4. multilayer material phased-array laser radar transmitting chip according to claim 1, which is characterized in that the coupling connects
Binding structure includes: the first material coupled waveguide and silicon coupled waveguide；
The first material coupled waveguide is connected to the rear end of the first material waveguide of the beam splitter, and the silicon coupled waveguide connects
It connects in the front end of the silicon waveguide of the SOI silicon waveguiding structure layer；
The first material coupled waveguide and the silicon coupled waveguide are respectively wedge structure, the first material coupled waveguide and
The tip of the silicon coupled waveguide is opposite, and the view field of the first material coupled waveguide and the silicon coupled waveguide is mutual
It is overlapping.
5. multilayer material phased-array laser radar transmitting chip according to claim 4, which is characterized in that first material
The tip width for expecting coupled waveguide and silicon coupled waveguide is 100~300nm；
Of same size, the silicon coupled waveguide of first material waveguide of the rear width and beam splitter of the first material coupled waveguide
Rear width and the silicon waveguide of the SOI silicon waveguiding structure layer it is of same size；
Mutually overlapping zone length is 10~100um.
6. multilayer material phased-array laser radar transmitting chip according to claim 1, which is characterized in that first material
Expect structure sheaf further include: the first material trunk waveguide；
The input coupler carries out optical path connection by the first material trunk waveguide and the beam splitter.
7. a kind of phased-array laser radar, which is characterized in that including multilayer material phased array described in any one of claims 1-6
Laser radar transmitting chip.
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