CN115136326B - Solar cell - Google Patents
Solar cell Download PDFInfo
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- CN115136326B CN115136326B CN202180015861.5A CN202180015861A CN115136326B CN 115136326 B CN115136326 B CN 115136326B CN 202180015861 A CN202180015861 A CN 202180015861A CN 115136326 B CN115136326 B CN 115136326B
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- 239000004065 semiconductor Substances 0.000 claims abstract description 101
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000004020 conductor Substances 0.000 claims description 64
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 230000035882 stress Effects 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention provides a solar cell with small warpage. A solar cell according to an embodiment of the present invention includes: a semiconductor substrate (10); a plurality of first semiconductor layers (21) and a plurality of second semiconductor layers (22) each extending in a first direction and alternately arranged on the back surface of the semiconductor substrate (10) in a second direction intersecting the first direction; a plurality of first collecting electrodes (31) and a plurality of second collecting electrodes (32), wherein the plurality of first collecting electrodes (31) are laminated on the back surface side of each of the first semiconductor layers (21) so as to extend in the first direction, and the plurality of second collecting electrodes (32) are laminated on the back surface side of each of the second semiconductor layers (22) so as to extend in the first direction; and an insulating layer (40) that is laminated on the back surface side of the semiconductor substrate (10) so as to cover the first semiconductor layer (21), the second semiconductor layer (22), the first collecting electrode (31), and the second collecting electrode (32), wherein the insulating layer (40) has a plurality of slits (41) extending in the first direction.
Description
Technical Field
The present invention relates to a solar cell.
Background
A so-called back contact type solar cell is known in which positive and negative electrodes are disposed only on the back surface side (the side opposite to the light incidence surface) of a semiconductor substrate for photoelectric conversion. In a back contact solar cell, generally, linear or ribbon electrodes having different polarities are alternately arranged on the back surface for current collection, and electrodes having the same polarity are connected by a wiring material. Therefore, in the back contact type solar cell, in order to prevent short-circuiting between electrodes having different polarities on the back surface side, an insulating layer may be laminated so as to cover the back surface side of each electrode (for example, refer to patent document 1).
Patent document 1: japanese patent application laid-open No. 2017-11318
Disclosure of Invention
The insulating layer is generally formed of a resin. However, when the insulating layers made of resin are stacked, the thermal expansion coefficient of the resin is larger than that of the semiconductor substrate, and thus the solar cell may be warped due to temperature change. In addition, when the insulating layer is formed by curing a liquid or paste resin, there is a case where the solar cell is warped due to shrinkage when the resin is cured. Accordingly, an object of the present invention is to provide a solar cell with less warpage.
A solar cell according to an embodiment of the present invention includes: a semiconductor substrate; a plurality of first semiconductor layers and a plurality of second semiconductor layers extending in a first direction and alternately arranged on a rear surface of the semiconductor substrate in a second direction intersecting the first direction; a plurality of first collecting electrodes and a plurality of second collecting electrodes, wherein the plurality of first collecting electrodes are laminated on the back surface side of each of the first semiconductor layers so as to extend in the first direction, and the plurality of second collecting electrodes are laminated on the back surface side of each of the second semiconductor layers so as to extend in the first direction; and an insulating layer laminated on the back surface side of the semiconductor substrate so as to cover the first semiconductor layer, the second semiconductor layer, the first collecting electrode, and the second collecting electrode, the insulating layer having a plurality of slits extending in the first direction.
In the solar cell according to one aspect of the present invention, the plurality of slits may be formed over the entire length of the insulating layer in the first direction.
In the solar cell according to one aspect of the present invention, the plurality of slits may include: a plurality of first connection slits formed to extend from a central portion in the first direction to one side in the first direction, and partially exposing the first collecting electrode; and a plurality of second connection slits formed alternately with the first connection slits in the second direction so as to extend from a central portion in the first direction to the other side in the first direction, and partially exposing the second collecting electrode.
The solar cell according to one embodiment of the present invention may further include: a first connection conductor disposed on the back surface side of the insulating layer so as to extend in the second direction so as to intersect the plurality of first connection slits, and connecting the plurality of first collection electrodes; and a second connection conductor disposed on the back surface side of the insulating layer so as to extend in the second direction so as to intersect the plurality of second connection slits, and connecting the second collection electrodes.
In the solar cell according to one aspect of the present invention, the first connecting conductor and the second connecting conductor may have a width in the first direction of 1/3 or less of a length in the first direction of the first connecting slit and the second connecting slit.
In the solar cell according to one aspect of the present invention, the first direction may be aligned with a short side direction of the semiconductor substrate, and the first direction may be aligned with a long side direction of the semiconductor substrate.
According to the present invention, a solar cell with less warpage can be provided.
Drawings
Fig. 1 is a rear view of a solar cell according to a first embodiment of the present invention.
Fig. 2 is an X-X sectional view of the solar cell of fig. 1.
Fig. 3 is a rear view of a solar cell according to a second embodiment of the present invention.
Fig. 4 is a Y-Y cross-sectional view of the solar cell of fig. 3.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, the same or corresponding portions are denoted by the same reference numerals in the drawings. For convenience, the reference numerals of the components may be omitted, and in this case, reference is made to the other drawings.
< first embodiment >, first embodiment
First, a first embodiment of the present invention will be described. Fig. 1 is a rear view of a solar cell 1 according to a first embodiment of the present invention. Fig. 2 is an X-X sectional view of the solar cell 1. The front surface of the solar cell 1 is a surface on which light is incident, and the back surface is a surface on the opposite side.
The solar cell 1 includes: a semiconductor substrate 10; a plurality of first semiconductor layers 21 and a plurality of second semiconductor layers 22 each extending in a first direction and alternately provided on the back surface of the semiconductor substrate 10 in a second direction intersecting the first direction; a plurality of first collecting electrodes 31 and a plurality of second collecting electrodes 32, the plurality of first collecting electrodes 31 being stacked on the back surface side of each first semiconductor layer 21 so as to extend in the first direction, the plurality of second collecting electrodes 32 being stacked on the back surface side of each second semiconductor layer 22 so as to extend in the first direction; an insulating layer 40 laminated on the back surface side of the semiconductor substrate 10 so as to cover the first semiconductor layer 21, the second semiconductor layer 22, the first collecting electrode 31, and the second collecting electrode 32, and partially exposing the first collecting electrode 31 and the second collecting electrode 32; and a first connection conductor 51 and a second connection conductor 52, wherein the first connection conductor 51 is disposed on the back side of the insulating layer 40, connects the plurality of first collecting electrodes 31, and the second connection conductor 52 is disposed on the back side of the insulating layer 40, and connects the second collecting electrodes 32. In fig. 1, in order to facilitate understanding of the lamination range of the insulating layer 40, the region where the insulating layer 40 exists is hatched.
The semiconductor substrate 10 is formed of a crystalline silicon material such as single crystal silicon or polycrystalline silicon. The semiconductor substrate 10 is, for example, an n-type semiconductor substrate in which an n-type dopant is doped in a crystalline silicon material. As the n-type dopant, phosphorus (P) is exemplified. The semiconductor substrate 10 functions as a photoelectric conversion substrate that absorbs incident light from the light receiving surface side to generate photo-generated carriers (electrons and holes). By using crystalline silicon as a material of the semiconductor substrate 10, dark current is relatively small, and a relatively high output (output stable regardless of illuminance) can be obtained even when the intensity of incident light is low.
The semiconductor substrate 10 is preferably formed in a shape having a short side direction and a long side direction, for example, in a rectangular shape, and the first direction coincides with the short side direction of the semiconductor substrate 10 and the second direction coincides with the long side direction of the semiconductor substrate 10. As a result, the stress due to the difference in thermal expansion coefficient between the semiconductor substrate 10 and each component described below mainly acts in the short direction, and therefore, the warp of the solar cell 1 due to the thermal stress can be suppressed.
The first semiconductor layer 21 and the second semiconductor layer 22 have mutually different conductivity types. As an example, the first semiconductor layer 21 is formed of a p-type semiconductor, and the second semiconductor layer 22 is formed of an n-type semiconductor. The first semiconductor layer 21 and the second semiconductor layer 22 are formed of, for example, an amorphous silicon material containing a dopant imparting a desired conductivity type. Examples of the P-type dopant include boron (B), and examples of the n-type dopant include phosphorus (P) described above. The first semiconductor layer 21 and the second semiconductor layer 22 can be sequentially formed on the back surface of the semiconductor substrate 10 by selectively stacking semiconductor materials by a film formation technique such as CVD.
The first semiconductor layer 21 and the second semiconductor layer 22 are each formed in a band shape extending in the first direction. In the solar cell 1, the plurality of first semiconductor layers 21 and the plurality of second semiconductor layers 22 are alternately arranged in a second direction intersecting the first direction. The first semiconductor layer 21 and the second semiconductor layer 22 are preferably arranged so as to cover substantially the entire surface of the semiconductor substrate 10.
The first collecting electrode 31 and the second collecting electrode 32 are respectively provided at the second-direction central portions of the first semiconductor layer 21 and the second semiconductor layer 22 in plan view. The first collecting electrode 31 and the second collecting electrode 32 are preferably disposed over substantially the entire length of the first semiconductor layer 21 and the second semiconductor layer 22 in the second direction.
The first collecting electrode 31 and the second collecting electrode 32 are formed of a material having conductivity, and take out charges from the first semiconductor layer 21 and the second semiconductor layer 22. Specifically, the first collecting electrode 31 and the second collecting electrode 32 can be formed by printing and firing a silver paste. The first collecting electrode 31 and the second collecting electrode 32 may be formed by patterning, for example, metal layers stacked by sputtering, plating, or the like by etching.
In order to ensure connection with the first connection conductor 51 and the second connection conductor 52, the first collecting electrode 31 and the second collecting electrode 32 may have a connection portion 33 formed by partially widening portions to which the first connection conductor 51 and the second connection conductor 52 are connected, respectively. In addition, the thickness of the first collecting electrode 31 and the second collecting electrode 32 is locally increased at the connecting portion 33, so that the first connecting conductor 51 and the second connecting conductor 52 can be easily and reliably connected.
The connection portion 33 is preferably provided in the vicinity of the first direction center of the first collecting electrode 31 and the second collecting electrode 32. This reduces the effective resistance of the first collecting electrode 31 and the second collecting electrode 32, that is, the resistance between the first semiconductor layer 21 and the second semiconductor layer 22 and the first connecting conductor 51 and the second connecting conductor 52. For example, the connection portion 33 of the first collecting electrode 31 is provided at a position slightly offset from the center in the first direction to one side in the first direction, and the connection portion 33 of the second collecting electrode 32 is provided at a position slightly offset from the center in the first direction to the other side in the first direction, whereby interference between the first connection conductor 51 and the second connection conductor 52 can be avoided and the resistance can be reduced.
The insulating layer 40 has: a plurality of slits 41 formed to extend in the first direction between the first collecting electrode 31 and the second collecting electrode 32 in a plan view; and a plurality of openings 42 formed so as to partially, specifically, respectively expose the first collecting electrode 31 and the second collecting electrode 32.
The insulating layer 40 is formed by printing and firing an insulating resin composition, for example, using an epoxy resin or the like as a main component. The insulating layer 40 prevents the first connection conductor 51 from flexing to contact the second collecting electrode 32, and the second connection conductor 52 from flexing to contact the first collecting electrode 31.
Each slit 41 is formed to extend over the entire length of the insulating layer 40 in the first direction. That is, the insulating layer 40 is divided into a plurality of portions in the second direction by the plurality of slits 41. The width of the slit 41 in the second direction is equal to or larger than a size required to reliably break the insulating layer 40, and equal to or smaller than a size that does not expose a necessary region of the first collecting electrode 31 and the second collecting electrode 32.
The thermal expansion coefficient of the insulating layer 40 composed mainly of resin is easily increased as compared with the semiconductor substrate 10 or the like, but the insulating layer 40 is divided by the slits 41, so that stress generated by a difference between thermal displacement (expansion amount or contraction amount) accompanying a temperature change and thermal displacement of the semiconductor substrate 10 can be relaxed, and warp of the solar cell 1 in the second direction can be suppressed. In addition, in the case where the insulating layer 40 is formed by curing a liquid or paste resin, warpage in the second direction of the solar cell 1 due to shrinkage at the time of curing the resin can be suppressed.
The openings 42 expose the connection portions 33 of the first collecting electrode 31 or the second collecting electrode 32, respectively, and can connect the first connection conductor 51 or the second connection conductor 52 to the connection portions 33. The openings 42 may be formed larger than the connection portion 33 so as to expose the entire connection portion 33, or may be formed in such a size as to expose a part of the connection portion 33.
The first connection conductor 51 is connected to the plurality of first collecting electrodes 31, and the second connection conductor 52 is connected to the plurality of second collecting electrodes 32. The first connection conductor 51 and the second connection conductor 52 are formed of, for example, a wire-like or a band-like conductor such as a copper wire. The first connection conductor 51 and the second connection conductor 52 are connected to the first collecting electrode 31 and the second collecting electrode 32 by using, for example, a conductive adhesive, solder, or the like. Therefore, as the first connection conductor 51 and the second connection conductor 52, a conductor whose periphery is covered with solder may be used.
As described above, the solar cell 1 can prevent the short circuit between the first connection conductor 51 and the second collection electrode 32 and the short circuit between the second connection conductor 52 and the first collection electrode 31 by the insulating layer 40. In addition, in the solar cell 1, since the insulating layer 40 is divided into a plurality of portions in the second direction by the plurality of slits 41 extending in the first direction, stress in the second direction due to the difference in thermal expansion coefficient between the insulating layer 40 and the semiconductor substrate 10 and stress in the second direction due to shrinkage of the resin at the time of forming the insulating layer 40 can be relaxed. Therefore, the solar cell 1 is less likely to warp in the second direction.
< second embodiment >
Next, a second embodiment of the present invention will be described. Fig. 3 is a rear view of a solar cell 1A according to a second embodiment of the present invention. Fig. 4 is a Y-Y sectional view of the solar cell 1A. In the following description, the same reference numerals are given to the same components as those in the embodiment described above, and overlapping description is omitted.
The solar cell 1A includes: a semiconductor substrate 10; a plurality of first semiconductor layers 21 and a plurality of second semiconductor layers 22 each extending in a first direction and alternately provided on the back surface of the semiconductor substrate 10 in a second direction intersecting the first direction; a plurality of first collecting electrodes 31 and a plurality of second collecting electrodes 32, the plurality of first collecting electrodes 31 being stacked on the back surface side of each first semiconductor layer 21 so as to extend in the first direction, the plurality of second collecting electrodes 32 being stacked on the back surface side of each second semiconductor layer 22 so as to extend in the first direction; the insulating layer 40A is laminated on the back surface side of the semiconductor substrate 10 so as to cover the first semiconductor layer 21, the second semiconductor layer 22, the first collecting electrode 31, and the second collecting electrode 32, and has a plurality of connection slits 43 and 44 partially exposing the first collecting electrode 31 and the second collecting electrode 32; and a first connection conductor 51A and a second connection conductor 52A disposed on the back surface side of the insulating layer 40A, the first connection conductor 51A connecting the plurality of first collecting electrodes 31, and the second connection conductor 52A connecting the second collecting electrodes 32.
The insulating layer 40A of the solar cell 1A of fig. 3 and the insulating layer 4 of the solar cell 1 of fig. 1 are different only in planar shape, and can be formed by the same method using the same material as the insulating layer 40 of the solar cell 1 of fig. 1.
The slit formed in the insulating layer 40A includes: a plurality of first connection slits 43 formed to extend from the central portion in the first direction to one side in the first direction, exposing the connection portion 33 of the first collecting electrode 31; and a plurality of first connection slits 43 formed alternately with the first connection slits 43 in the second direction so as to extend from a central portion in the first direction to the other side in the first direction, exposing the connection portions 33 of the second collecting electrodes 32.
The length of the first connection slits 43 and the second connection slits 44 in the first direction is approximately 1/2 of the length of the insulating layer 40A in the first direction. Thereby, the first connection slit 43 alleviates warpage of one half of the solar cell 1A in the first direction due to thermal stress, and the second connection slit 44 eases warpage of the other half of the solar cell 1A in the first direction due to thermal stress.
In addition, the width of the first connection slits 43 in the second direction is substantially equal to or slightly smaller than the interval of the first semiconductor layer 21 in the second direction, and the width of the second connection slits 44 in the second direction is substantially equal to or slightly smaller than the interval of the second semiconductor layer 22 in the second direction. Even when the insulating layer 40A is printed with the aperture ratios of the first connection slit 43 and the second connection slit 44 set to the same value as the ratio of the non-existing regions of the first semiconductor layer 21 and the second semiconductor layer, respectively, the actual insulating layer 40A oozes out so as to slightly expand from the printing range, so that the first connection slit 43 does not expose the second semiconductor layer 22, and the second connection slit 44 does not expose the first semiconductor layer 21. Thus, even when the first connection conductor 51A and the second connection conductor 52A are formed using a material having fluidity, the insulating layer 40A can prevent a short circuit between the first connection conductor 51A and the second semiconductor layer 22 and a short circuit between the second connection conductor 52A and the first semiconductor layer 21.
The first connection conductors 51A are disposed so as to extend in the second direction so as to intersect the plurality of first connection slits 43 without intersecting the second connection slits 44, and connect the connection portions 33 of the plurality of first collection electrodes 31. The second connection conductors 52A are arranged so as to extend in the second direction so as to intersect the plurality of second connection slits 44 without intersecting the first connection slits 43, and connect the connection portions 33 of the plurality of second collection electrodes 32.
The first connection conductor 51A and the second connection conductor 52A can be formed by selectively disposing a paste or a liquid conductive material having a high viscosity and curing the conductive material. Specifically, the first connection conductor 51A and the second connection conductor 52A can be formed by printing and firing a conductive paste such as silver paste, for example. In this way, the first connection conductor 51A and the second connection conductor 52A are formed by printing, so that an adhesive or solder for bonding the first connection conductor 51A and the second connection conductor 52A to the first collecting electrode 31 and the second collecting electrode 32 is not required.
The upper limit of the length of the first connection conductor 51A and the second connection conductor 52A in the first direction is preferably 1/3 or less, more preferably 1/5 or less of the length of the first connection slit 43 and the second connection slit 44 in the first direction. In this way, by reducing the area where the first connection conductor 51A or the second connection conductor 52A interferes with the variation in the width of the first connection slit 43 and the second connection slit 44 in the second direction, the effect of suppressing the warp of the solar cell 1A can be increased.
The embodiments of the present invention have been described above, but the present invention is not limited to the above embodiments and various modifications and variations are possible. For example, the solar cell according to the present invention may include, in addition to the above-described components, further components such as an antireflection film that suppresses reflection of light.
In the solar cell according to the present invention, the planar shape of the insulating film including the shape of the slit is not limited to the shape of the above embodiment. As an example, the width of the slit in the second direction may not be constant, and for example, the width of the first connection slit and the second connection slit in the second direction may be reduced as a whole, and the width of the portion corresponding to the connection portion of the first collecting electrode and the second collecting electrode may be increased. In addition, a narrow region where neither the first connection slit nor the second connection slit is formed may remain in the central portion of the insulating layer in the first direction as viewed from the second direction, and a region where the first connection slit and the second connection slit are formed repeatedly may remain in the central portion of the insulating layer in the first direction.
Description of the reference numerals
1. 1a … solar cell; 10 … semiconductor substrate; 21 … first semiconductor layers; 22 … second semiconductor layers; 31 … first collecting electrode; 32 … second collecting electrode; 40. 40a … insulating layer; 41 … slit; 42 … opening; 43 … first connecting slit; 44 … second connecting slits; 51. 51a … first connecting conductors; 52. 52a … second connection conductor.
Claims (4)
1. A solar cell is characterized by comprising:
a semiconductor substrate;
a plurality of first semiconductor layers and a plurality of second semiconductor layers extending in a first direction and alternately arranged on a rear surface of the semiconductor substrate in a second direction intersecting the first direction;
a plurality of first collecting electrodes stacked on the back surface side of each of the first semiconductor layers so as to extend in the first direction, and a plurality of second collecting electrodes stacked on the back surface side of each of the second semiconductor layers so as to extend in the first direction; and
an insulating layer laminated on the back surface side of the semiconductor substrate so as to cover the first semiconductor layer, the second semiconductor layer, the first collecting electrode, and the second collecting electrode,
the insulating layer has a plurality of slits extending in the first direction,
the plurality of slits includes:
a plurality of first connection slits formed to extend from a central portion in the first direction to one side in the first direction, and partially exposing the first collecting electrode; and
and a plurality of second connection slits formed alternately with the first connection slits in the second direction so as to extend from a central portion in the first direction to the other side in the first direction, and partially exposing the second collecting electrode.
2. The solar cell according to claim 1, wherein,
the device further comprises: a first connection conductor disposed on the back surface side of the insulating layer so as to extend in the second direction so as to intersect the plurality of first connection slits, and connecting the plurality of first collection electrodes; and a second connection conductor disposed on the back surface side of the insulating layer so as to extend in the second direction so as to intersect the plurality of second connection slits, and connecting the second collection electrodes.
3. The solar cell according to claim 2, wherein,
the first direction width of the first connection conductor and the second connection conductor is 1/3 or less of the first direction length of the first connection slit and the second connection slit.
4. The solar cell according to any one of claim 1 to 3, wherein,
the first direction is aligned with a short side direction of the semiconductor substrate, and the first direction is aligned with a long side direction of the semiconductor substrate.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020037806 | 2020-03-05 | ||
| JP2020-037806 | 2020-03-05 | ||
| PCT/JP2021/008211 WO2021177356A1 (en) | 2020-03-05 | 2021-03-03 | Solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115136326A CN115136326A (en) | 2022-09-30 |
| CN115136326B true CN115136326B (en) | 2024-03-12 |
Family
ID=77614032
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202180015861.5A Active CN115136326B (en) | 2020-03-05 | 2021-03-03 | Solar cell |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2021177356A1 (en) |
| CN (1) | CN115136326B (en) |
| WO (1) | WO2021177356A1 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104272475A (en) * | 2012-03-19 | 2015-01-07 | 瑞科斯太阳能源私人有限公司 | Cell and module processing of semiconductor wafers for back-contacted solar photovoltaic module |
| CN106505122A (en) * | 2015-09-04 | 2017-03-15 | Lg电子株式会社 | Solar module |
| CN106992224A (en) * | 2015-09-09 | 2017-07-28 | Lg电子株式会社 | Solar module and its manufacture method |
| CN108028290A (en) * | 2015-09-14 | 2018-05-11 | 夏普株式会社 | Photo-electric conversion element includes the solar module and photovoltaic power generation system of the photo-electric conversion element |
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2021
- 2021-03-03 CN CN202180015861.5A patent/CN115136326B/en active Active
- 2021-03-03 WO PCT/JP2021/008211 patent/WO2021177356A1/en active Application Filing
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104272475A (en) * | 2012-03-19 | 2015-01-07 | 瑞科斯太阳能源私人有限公司 | Cell and module processing of semiconductor wafers for back-contacted solar photovoltaic module |
| CN106505122A (en) * | 2015-09-04 | 2017-03-15 | Lg电子株式会社 | Solar module |
| CN106992224A (en) * | 2015-09-09 | 2017-07-28 | Lg电子株式会社 | Solar module and its manufacture method |
| CN108028290A (en) * | 2015-09-14 | 2018-05-11 | 夏普株式会社 | Photo-electric conversion element includes the solar module and photovoltaic power generation system of the photo-electric conversion element |
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| CN115136326A (en) | 2022-09-30 |
| WO2021177356A1 (en) | 2021-09-10 |
| JPWO2021177356A1 (en) | 2021-09-10 |
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