CN115133506A - Single-drive-control series SiC MOSFET direct-current solid-state circuit breaker and power distribution system - Google Patents

Single-drive-control series SiC MOSFET direct-current solid-state circuit breaker and power distribution system Download PDF

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Publication number
CN115133506A
CN115133506A CN202210874781.1A CN202210874781A CN115133506A CN 115133506 A CN115133506 A CN 115133506A CN 202210874781 A CN202210874781 A CN 202210874781A CN 115133506 A CN115133506 A CN 115133506A
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sic mosfet
mosfet device
diode
mov
circuit breaker
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CN202210874781.1A
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辛振
岳远省
薛聚
陈建良
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Hebei University of Technology
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Hebei University of Technology
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/26—Sectionalised protection of cable or line systems, e.g. for disconnecting a section on which a short-circuit, earth fault, or arc discharge has occured
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
    • H02H3/087—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current for dc applications
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current

Abstract

The invention relates to a single-drive-controlled series SiC MOSFET direct-current solid-state circuit breaker and a power distribution system 1 ～M n And a driving resistor R g1 ～R gn Diode D 1 ～D n‑1 RCD buffer circuit, varistor MOV and varistor MOV cs (ii) a One end of SiC MOSFET drive circuit and SiC MOSFET device M 1 The output end of the SiC MOSFET driving circuit passes through a driving resistor R g1 And SiC MOSFET device M 1 The gate of (1) is connected; the output end of the SiC MOSFET driving circuit is simultaneously connected with a diode D in series 1 ～D n‑1 Diode D 1 ～D n‑1 Are respectively connected with the SiC MOSFET device M through respective driving resistors 2 ～M n Is connected with the grid; SiC MOSFET device M 2 ～M n Each of which is connected with a voltage stabilizing diode, the anode of the voltage stabilizing diode is connected with the source electrode of the SiC MOSFET device, and the cathode of the voltage stabilizing diode is connected with the grid electrode of the SiC MOSFET device. The grid oscillation problem of the device is solved, and the conduction loss is reduced.

Description

Single-drive-control series SiC MOSFET direct-current solid-state circuit breaker and power distribution system
Technical Field
The invention belongs to the technical field of direct current solid-state circuit breakers, and particularly relates to a series SiC MOSFET direct current solid-state circuit breaker with single drive control and a power distribution system.
Background
The direct-current solid-state circuit breaker with the SiC MOSFET device as the main control switch is suitable for short-circuit fault protection of a direct-current power system due to the excellent switching characteristics of the SiC MOSFET device, such as high switching speed, low conduction loss, strong fault resistance and the like. Although the solid-state circuit breaker using the SiC MOSFET device as the main control switch has quite excellent switching characteristics, the voltage resistance level of a single SiC MOSFET device is limited, and a plurality of SiC MOSFET devices are generally connected in series to form a direct-current solid-state circuit breaker so as to adapt to higher voltage levels.
In order to reduce the cost of the solid-state circuit breaker with the device series structure and the complexity of a system, a series SiC MOSFET solid-state circuit breaker structure controlled by a single driving circuit is provided, and the on-off control of a plurality of series devices can be realized by only using a standard driving circuit and a small number of passive devices in the structure, so that the cost of the solid-state circuit breaker and the complexity of the system are greatly reduced, and the control is simplified. The single switching characteristic of the devices in the solid-state circuit breaker enables the series devices in the solid-state circuit breaker to limit the highest voltage at two ends of the devices in a mode that Metal Oxide Varistors (MOVs) are connected in parallel at two ends of the series devices, so that the problem of dynamic voltage sharing among the series devices in the single-drive solid-state circuit breaker is solved, and further a realization condition is provided for the single-drive solid-state circuit breaker.
The solid-state circuit breaker structure based on capacitive coupling single-drive control has the grid oscillation problem, and the oscillation can cause that some devices are conducted mistakenly in the voltage recovery stage of fault interruption, and cause uneven voltage among the series devices, thereby affecting the reliability of the whole circuit breaker in turn-off. In order to improve the grid oscillation problem, the prior art further adds a diode which is conducted in one direction on the main branch of the circuit breaker, but the conduction loss of the whole circuit breaker is increased.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to solve the technical problem of providing a series SiC MOSFET direct current solid-state circuit breaker with single drive control and a power distribution system.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
in one aspect, the invention provides a series SiC MOSFET direct current solid-state circuit breaker with single drive control, which comprises a SiC MOSFET drive circuit and a SiC MOSFET device M 1 ～M n And a driving resistor R g1 ～R gn Diode D 1 ～D n-1 RCD buffer circuit, varistor MOV and varistor MOV cs (ii) a n is a positive integer greater than or equal to 2;
each SiC MOSFET device corresponds to one RCD buffer circuit and one voltage dependent resistor MOV, two ends of the voltage dependent resistor MOV are connected with the source electrode and the drain electrode of the SiC MOSFET device, and the capacitor of each RCD buffer circuit is connected with one voltage dependent resistor MOV in parallel cs Piezoresistor MOV and piezoresistor MOV cs The models are the same;
the drain electrode of the previous SiC MOSFET device is connected with the source electrode of the next SiC MOSFET device to realize the SiC MOSFET device M 1 ～M n The series connection of (2); one end of SiC MOSFET drive circuit and SiC MOSFET device M 1 The output end of the SiC MOSFET drive circuit passes through a drive resistor R g1 And SiC MOSFET device M 1 The gate of (1) is connected; the output end of the SiC MOSFET drive circuit is simultaneously connected with a diode D in series 1 ～D n-1 Diode D 1 ～D n-1 Respectively connected with the SiC MOSFET devices M through respective driving resistors 2 ～M n The gate of (1) is connected; SiC MOSFET device M 2 ～M n Each of which is connected with a voltage stabilizing diode, the anode of the voltage stabilizing diode is connected with the source electrode of the SiC MOSFET device, and the cathode of the voltage stabilizing diode is connected with the grid electrode of the SiC MOSFET device.
Further, the RCD buffer circuit comprises a diode D S Capacitor C S And a resistance R S (ii) a Diode D S And a resistor R s Parallel connected, diode D S Cathode and capacitor C s Is connected to a capacitor C s Is connected to the source of the corresponding SiC MOSFET device, a varistor MOV cs Connected in parallel to a capacitor C s Both ends of (a); diode D of the last RCD buffer circuit S Is connected to the gate of the next SiC MOSFET device, and the diode D of the last RCD snubber circuit S Is connected to the drain of the corresponding SiC MOSFET device.
On the other hand, the invention provides a direct current distribution system, which comprises a direct current power supply, a current-limiting inductor, a direct current solid-state circuit breaker and a load which are sequentially connected in series; the direct current solid-state circuit breaker is the single-drive-controlled series SiC MOSFET direct current solid-state circuit breaker.
Compared with the prior art, the invention has the beneficial effects that:
the diode of the RCD buffer circuit is connected with the resistor in parallel, the cathode of the diode is connected with one end of the capacitor, the anode of the diode of the previous RCD buffer circuit is connected with the grid of the next SiC MOSFET device, and the SiC MOSFET device M 1 When the voltage at two ends is reduced to the bus voltage from the clamping voltage with MOV high, the capacitor C s1 And a varistor MOV cs1 Discharging, flowing through SiC MOSFET device M 2 Diode D with channel of grid capacitor being conducted in one direction s1 Cut off the discharge current no longer flowing through the SiC MOSFET device M 2 But only through the resistor R s1 Discharge, thereby avoiding the capacitor C s1 Discharge pair SiC MOSFET device M 2 Oscillation problem caused by gate voltage, so that SiC MOSFET device M 2 The gate voltage tends to be stable. The invention only utilizes the diode in the RCD buffer circuit to solve the grid oscillation problem in the original single driving structure, thereby improving the turn-off reliability of the whole breaker, avoiding the increase of excessive passive devices and ensuring the economy of the whole structure.
2. In the breaker structure, except that the conduction loss exists when the two SiC MOSFET devices flow normal load current during the normal operation of the breaker, other elements in the structure do not flow normal load current, namely, the conduction loss is not generated, so that the conduction loss of the breaker is reduced.
3. The circuit breaker of the invention respectively connects piezoresistors with the same parameters in parallel at the drain-source end of the SiC MOSFET device and the two ends of the buffer capacitor, so that the short-circuit current respectively flows from the two branches containing the piezoresistors to release energy in the inductive energy release stage, therefore, compared with an energy release channel formed by only one piezoresistor, the circuit breaker in the device M has the advantages that the leakage-source end of the SiC MOSFET device and the two ends of the buffer capacitor are respectively connected with the piezoresistors with the same parameters in parallel, and the energy release is realized 2 The size of the current flowing on the voltage stabilizing diode branch circuit is reduced by one time theoretically, the problem that large current flows on the voltage stabilizing diode is solved, and the safety of the device is improved.
Drawings
Fig. 1 is a topological structure diagram of a dc solid-state circuit breaker formed by two SiC MOSFET devices connected in series;
FIG. 2 is a topological structure diagram of a DC solid-state breaker formed by three SiC MOSFET devices connected in series;
FIG. 3 is a topology diagram of a DC power distribution system;
fig. 4 is a topological structure diagram of a single-drive control solid-state circuit breaker based on capacitive coupling proposed in the prior art;
fig. 5 is an equivalent discharge diagram of a single-drive control solid-state circuit breaker based on capacitive coupling in the voltage recovery stage proposed in the prior art;
fig. 6 is a simulation waveform diagram of a single-drive control solid-state circuit breaker based on capacitive coupling proposed by the prior art;
fig. 7 is a simulated waveform diagram of a single drive controlled series SiC MOSFET dc solid state circuit breaker of the present invention.
Detailed Description
The technical solutions of the present invention are described in detail below with reference to the drawings and the detailed description, but the scope of the present invention is not limited thereto.
The invention relates to a series SiC MOSFET direct current solid-state circuit breaker with single drive control, which comprises a SiC MOSFET drive circuit and a SiC MOSFET device M 1 ～M n And a driving resistor R g1 ～R gn Diode D 1 ～D n-1 RCD buffer circuit, varistor MOV and varistor MOV cs (ii) a Each timeThe SiC MOSFET device corresponds to an RCD buffer circuit and an MOV, two ends of the MOV are connected with the source and the drain of the SiC MOSFET device, and the capacitor of each RCD buffer circuit is connected with the MOV in parallel cs Piezo-resistor MOV and piezo-resistor MOV cs The models are the same; n is a positive integer greater than or equal to 2;
the drain electrode of the previous SiC MOSFET device is connected with the source electrode of the next SiC MOSFET device to realize the SiC MOSFET device M 1 ～M n The series connection of (1); a SiC MOSFET drive circuit as a signal generating circuit, one end of the SiC MOSFET drive circuit and the SiC MOSFET device M 1 The output end of the SiC MOSFET driving circuit passes through a driving resistor R g1 And SiC MOSFET device M 1 The gate of (1) is connected; the output end of the SiC MOSFET drive circuit is simultaneously connected with a diode D in series 1 ～D n-1 Diode D 1 ～D n-1 Respectively connected with the SiC MOSFET devices M through respective driving resistors 2 ～M n The gate of (1) is connected; diode D 1 ～D n-1 The functions of the method are as follows: when the corresponding SiC MOSFET device is conducted, a current path is provided for the SiC MOSFET device; when the corresponding SiC MOSFET device is turned off, the SiC MOSFET device is used for bearing high voltage; SiC MOSFET device M 2 ～M n Each of the voltage stabilizing diodes is connected with a voltage stabilizing diode, the anode of each voltage stabilizing diode is connected with the source electrode of the SiC MOSFET device, and the cathode of each voltage stabilizing diode is connected with the grid electrode of the SiC MOSFET device and is used for limiting the grid voltage of the SiC MOSFET device and avoiding the damage of the SiC MOSFET device caused by overhigh instantaneous voltage when the SiC MOSFET device is switched off;
the RCD buffer circuit comprises a diode D S Capacitor C S And a resistance R S Diode D S And a resistor R s Parallel connected, diode D S Cathode and capacitor C s Is connected to a capacitor C s Is connected to the source of the corresponding SiC MOSFET device, a varistor MOV cs Connected in parallel to a capacitor C s Two ends of (a); diode D of last RCD buffer circuit S Is connected to the gate of the next SiC MOSFET device, and the diode D of the last RCD snubber circuit S Anode of (2) and corresponding SiC MA drain connection of an OSFET device; the RCD buffer circuit is connected by using a capacitor C S The function of controlling the upper SiC MOSFET device through the switch state of the lower SiC MOSFET device is realized, and on the other hand, the function of controlling the upper SiC MOSFET device through the diode D S The problem of grid oscillation in the voltage recovery process is solved; the capacitor of the RCD snubber circuit not only limits the voltage rise time of the upper SiC MOSFET device through the charging process, but also plays a role in driving the upper SiC MOSFET device; diode D S Make the capacitor C S Establishing a connection between the voltage of the lower SiC MOSFET device and the drive voltage during charging, at capacitor C S In the oscillating discharge process, the diode D S Cut off the capacitor C S And the connection between the voltage of the lower SiC MOSFET device and the driving voltage ensures the stability of the driving voltage.
Examples
The series SiC MOSFET direct-current solid-state circuit breaker with single drive control of the invention is explained in detail by taking two SiC MOSFET devices in series as an example; as shown in FIG. 1, the circuit breaker comprises a SiC MOSFET drive circuit, a SiC MOSFET device M 1 ～M 2 And a driving resistor R g1 ～R g2 Diode D 1 Zener diode Z d1 First RCD buffer circuit, second RCD buffer circuit, piezo-resistor MOV 1 ～MOV 2 And a varistor MOV cs1 ～MOV cs2 (ii) a The first RCD buffer circuit comprises a diode D S1 Capacitor C S1 And a resistance R S1 The second RCD snubber circuit includes a diode D S2 Capacitor C S2 And a resistance R S2 ；
SiC MOSFET device M 1 And SiC MOSFET device M 2 Is connected to the source of the zener diode Z d1 Respectively with the SiC MOSFET device M 1 Is connected to the gate, zener diode Z d1 Respectively with the SiC MOSFET device M 2 The source electrode of (a) is connected with the grid electrode; one end of SiC MOSFET drive circuit and SiC MOSFET device M 1 The output end of the SiC MOSFET drive circuit passes through a drive resistor R g1 And SiC MOSFET device M 1 The output end of the SiC MOSFET driving circuit passes through the diode D simultaneously 1 And a driving resistor R g2 And SiC MOSFET device M 2 The gate of (1) is connected; SiC MOSFET drive circuit for SiC MOSFET device M 1 Providing an ON/OFF signal, the SiC MOSFET device M being turned on when the SiC MOSFET drive circuit outputs a high level 1 With the gate-source voltage at high level, a SiC MOSFET device M 1 Conducting; when the SiC MOSFET drive circuit outputs a low level, the SiC MOSFET device M 1 With the gate-source voltage at low level, SiC MOSFET device M 1 Turning off;
diode D S1 And a resistor R S1 Parallel connected, diode D S1 Anode of and SiC MOSFET device M 2 Is connected to the gate of diode D S1 Cathode and capacitor C S1 Is connected to a capacitor C S1 And the other end of the SiC MOSFET device M 1 Is connected to the source of (a); varistor MOV cs1 Connected in parallel to a capacitor C S1 Across a varistor MOV 1 And the SiC MOSFET device M 1 Is connected with the drain electrode; similarly, diode D S2 And a resistor R S2 Parallel connected, diode D S2 Anode of and SiC MOSFET device M 2 Is connected to the drain of diode D S2 Cathode and capacitor C S2 Is connected to a capacitor C S2 And the other end of the SiC MOSFET device M 2 Is connected to the source of (a); varistor MOV cs2 Connected in parallel to the capacitor C S2 Across a varistor MOV 2 And the SiC MOSFET device M 2 Is connected with the drain electrode; varistor MOV cs1 And MOV cs2 For limiting the capacitance C S1 And C S2 Voltage, varistor MOV 1 And MOV 2 For confining SiC MOSFET device M 1 And M 2 The voltage of (c).
Varistor MOV 1 ～MOV 2 And a varistor MOV cs1 ～MOV cs2 Of the same type, varistor MOV cs1 、MOV 1 And R s1 And a varistor MOV cs2 、MOV 2 And R s2 In the same connection way constituteTwo structures with the same resistance value are respectively connected in parallel with the SiC MOSFET device M according to the resistance voltage division principle 1 And M 2 The drain electrode and the source electrode of the SiC MOSFET device M is realized 1 And M 2 Voltage equalizing under the off state to make SiC MOSFET device M 1 And M 2 Respectively, to assume half the bus voltage.
The specific working principle is as follows: when the SiC MOSFET device M 1 When the SiC MOSFET device M receives a turn-off signal to turn off 1 Voltage V across ds1 Rise of voltage which results in a rise of voltage of the part in parallel therewith, i.e. diode D s1 And a capacitor C S1 The rise of the branch voltage, and thus the charging current, to the capacitor C of the first RCD buffer circuit S1 Charging the capacitor C with the charging current S1 Charging while flowing through SiC MOSFET device M 2 To the SiC MOSFET device M 2 Thereby discharging the gate capacitance of the SiC MOSFET device M 2 Gate voltage drop of, SiC MOSFET device M 2 Begins to turn off and eventually follows the SiC MOSFET device M 1 Voltage V across ds1 Of SiC MOSFET device M 2 Falls below the threshold voltage at which the SiC MOSFET device M 2 Completely turning off; when the device is completely turned off and the high blocking voltage is reduced to the bus voltage, the capacitor C S1 Will discharge to cause the voltage to drop, at which time the diode D s1 Blocking capacitor C S1 By SiC MOSFET device M 2 Discharge path of the gate so that the capacitance C S1 Through a resistance R S1 Discharge, thereby avoiding the capacitor C S1 Discharging pair SiC MOSFET device M 2 The influence of the grid voltage, thereby solving the problem of grid oscillation and ensuring the SiC MOSFET device M 2 Stable shutdown during fault isolation.
The single-drive-control series SiC MOSFET direct-current solid-state circuit breaker is mainly used for fault protection of a direct-current power distribution system with the voltage of more than 1kV, and is connected into the direct-current power distribution system in series in order to verify the effectiveness of the circuit breaker, wherein the direct-current power distribution system comprises a direct-current power supply, a current-limiting inductor, a direct-current solid-state circuit breaker and a load, and the direct-current power distribution system is involved inSee FIG. 3; the size of the current-limiting inductor is 500uH, the SiC MOSFET device is a C3M0032120D type device of wolffspeed company, and the diode D s1 、D s2 、D 1 Are all fast recovery diodes, drive resistor R g1 、R g2 Is 10 ohm, resistance R s1 、R s2 200 ohm, capacitance C s1 、C s2 At 2.2nF, a zener diode Z d1 、Z d1 With a clamping voltage of 15V, a varistor MOV 1 、MOV 2 、MOV cs1 、MOV cs2 The types of the SiC MOSFET devices are the same, and specific parameters are selected according to the bus voltage and the withstand voltage of the SiC MOSFET devices; when the system has a fault, the fault detection device sends out a protection interrupt signal to the circuit breaker, and the circuit breaker outputs a turn-off signal by the drive circuit after receiving the protection interrupt signal, so that the SiC MOSFET device M 1 Gate voltage drop of, SiC MOSFET device M 1 Starting to switch off; SiC MOSFET device M 1 When turned off, the voltage across it rises, which causes the SiC MOSFET device M 2 Thereby causing the SiC MOSFET device M to fall 2 Starting to turn off, and finally the SiC MOSFET device M 1 And M 2 And after the inductive energy release stage and the voltage recovery stage, the whole solid-state circuit breaker recovers the stable state during the turn-off, namely, the circuit breaker completes the fault protection and successfully isolates the fault.
Fig. 4 is a circuit breaker structure of capacitive coupling single drive control proposed by the prior art, and the circuit breaker structure in the prior art and the circuit breaker structure of the present invention are compared in simulation under 1200V bus voltage. Fig. 5 is an equivalent circuit diagram of a single-drive-control solid-state circuit breaker structure based on capacitive coupling in the voltage recovery stage, where the dotted line is an equivalent discharge current i 1 The flow path of (3); as can be seen from FIG. 5, a voltage V is present across the device ds When the clamping voltage from MOV is high and drops to the bus voltage, the capacitor C 1 And parasitic capacitance C of piezoresistor mov1 Will discharge due to the voltage drop, thus generating a discharge current i 1 Discharge current i 1 Flow through SiC MOSFET device M 2 Equivalent capacitance C of gd2 And C gs2 -C ds2 Two branches, the limiting inductance L which finally flows to the line limit When a discharge current flows through the SiC MOSFET device M 2 C of (A) gs2 -C ds2 Is equivalent to the supply capacitance C gs2 Charging to a gate voltage V gs2 Rises when V gs2 Over a threshold voltage of the device, which results in a SiC MOSFET device M 2 And (4) conducting again, namely misconduction occurs. FIGS. 6 and 7 are simulated waveforms of the single-drive controlled solid-state circuit breaker structure proposed in the prior art and the present invention, respectively, and it can be seen from the simulation results of FIG. 6 that the voltage V is ds2 And SiC MOSFET device M 1 And M 2 Drain-source voltage V of ds1 、V ds2 There is a significant differential pressure therebetween. As can be seen from fig. 7, for the circuit breaker of the present invention, the voltage V is present across the device ds When the clamping voltage from MOV is high and is reduced to the bus voltage, the capacitor C s1 And a varistor MOV cs1 During discharge, flows through the SiC MOSFET device M 2 Diode D with channel of grid capacitor being conducted in one direction s1 Cut off, discharge current no longer flows through the SiC MOSFET device M 2 But only through the resistor R s1 Discharge, thereby avoiding the capacitor C s1 Discharge pair SiC MOSFET device M 2 Gate voltage V gs2 Of the SiC MOSFET device M 2 The gate voltage of the device tends to be stable, and the device M 2 The shutdown can be stabilized. Embodied as device M in a simulated waveform diagram 1 And M 2 Voltage V of ds1 And V ds2 And good voltage sharing is always kept.
Nothing in this specification is said to apply to the prior art.

Claims (3)

1. A series SiC MOSFET direct current solid-state circuit breaker with single drive control is characterized by comprising a SiC MOSFET drive circuit and a SiC MOSFET device M 1 ～M n And a driving resistor R g1 ～R gn Diode D 1 ～D n-1 RCD buffer circuit, varistor MOV and varistor MOV cs (ii) a n is a positive integer greater than or equal to 2;
each SiCThe MOSFET device corresponds to an RCD buffer circuit and a piezoresistor MOV, two ends of the piezoresistor MOV are connected with the source electrode and the drain electrode of the SiC MOSFET device, and the capacitor of each RCD buffer circuit is connected with a piezoresistor MOV in parallel cs Piezoresistor MOV and piezoresistor MOV cs The models are the same;
the drain electrode of the last SiC MOSFET device is connected with the source electrode of the next SiC MOSFET device to realize the SiC MOSFET device M 1 ～M n The series connection of (1); one end of SiC MOSFET drive circuit and SiC MOSFET device M 1 The output end of the SiC MOSFET drive circuit passes through a drive resistor R g1 And SiC MOSFET device M 1 The gate of (1) is connected; the output end of the SiC MOSFET driving circuit is simultaneously connected with a diode D in series 1 ～D n-1 Diode D 1 ～D n-1 Are respectively connected with the SiC MOSFET device M through respective driving resistors 2 ～M n The gate of (1) is connected; SiC MOSFET device M 2 ～M n Each of which is connected with a voltage stabilizing diode, the anode of the voltage stabilizing diode is connected with the source electrode of the SiC MOSFET device, and the cathode of the voltage stabilizing diode is connected with the grid electrode of the SiC MOSFET device.
2. The single drive controlled series SiC MOSFET dc solid state circuit breaker of claim 1, wherein the RCD snubber circuit includes a diode D S Capacitor C S And a resistance R S (ii) a Diode D S And a resistor R s Parallel connected, diode D S Cathode and capacitor C s Is connected to a capacitor C s Is connected to the source of the corresponding SiC MOSFET device, a varistor MOV cs Connected in parallel to a capacitor C s Both ends of (a); diode D of last RCD buffer circuit S Is connected to the gate of the next SiC MOSFET device, and the diode D of the last RCD snubber circuit S Is connected to the drain of the corresponding SiC MOSFET device.
3. A direct current distribution system comprises a direct current power supply, a current-limiting inductor, a direct current solid-state circuit breaker and a load which are sequentially connected in series; the direct current solid-state circuit breaker is the single-drive-controlled series SiC MOSFET direct current solid-state circuit breaker of any one of claims 1 to 2.
CN202210874781.1A 2022-07-25 2022-07-25 Single-drive-control series SiC MOSFET direct-current solid-state circuit breaker and power distribution system Pending CN115133506A (en)

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CN202210874781.1A CN115133506A (en) 2022-07-25 2022-07-25 Single-drive-control series SiC MOSFET direct-current solid-state circuit breaker and power distribution system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210874781.1A CN115133506A (en) 2022-07-25 2022-07-25 Single-drive-control series SiC MOSFET direct-current solid-state circuit breaker and power distribution system

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CN115133506A true CN115133506A (en) 2022-09-30

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