CN115132859A - Solar cell production method and solar cell - Google Patents
Solar cell production method and solar cell Download PDFInfo
- Publication number
- CN115132859A CN115132859A CN202110316377.8A CN202110316377A CN115132859A CN 115132859 A CN115132859 A CN 115132859A CN 202110316377 A CN202110316377 A CN 202110316377A CN 115132859 A CN115132859 A CN 115132859A
- Authority
- CN
- China
- Prior art keywords
- copper
- layer
- solar cell
- aluminum
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 239000010410 layer Substances 0.000 claims abstract description 188
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 155
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 154
- 239000010949 copper Substances 0.000 claims abstract description 151
- 229910052802 copper Inorganic materials 0.000 claims abstract description 129
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 125
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 106
- 239000010703 silicon Substances 0.000 claims abstract description 106
- 239000000758 substrate Substances 0.000 claims abstract description 105
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 104
- 229910052751 metal Inorganic materials 0.000 claims abstract description 100
- 239000002184 metal Substances 0.000 claims abstract description 100
- 239000011241 protective layer Substances 0.000 claims abstract description 95
- 238000000034 method Methods 0.000 claims abstract description 43
- 150000001875 compounds Chemical class 0.000 claims abstract description 36
- 238000005245 sintering Methods 0.000 claims abstract description 27
- 238000009713 electroplating Methods 0.000 claims abstract description 25
- 239000011521 glass Substances 0.000 claims abstract description 22
- 239000002002 slurry Substances 0.000 claims abstract description 22
- UNRNJMFGIMDYKL-UHFFFAOYSA-N aluminum copper oxygen(2-) Chemical compound [O-2].[Al+3].[Cu+2] UNRNJMFGIMDYKL-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000007639 printing Methods 0.000 claims abstract description 9
- 239000011230 binding agent Substances 0.000 claims description 48
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 18
- 229910052709 silver Inorganic materials 0.000 claims description 18
- 239000004332 silver Substances 0.000 claims description 18
- 239000002245 particle Substances 0.000 claims description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 239000002904 solvent Substances 0.000 claims description 10
- 150000002148 esters Chemical class 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 230000009477 glass transition Effects 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 229910052596 spinel Inorganic materials 0.000 claims description 4
- 239000011029 spinel Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 claims description 3
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 claims description 3
- 229920003174 cellulose-based polymer Polymers 0.000 claims description 3
- 229910000510 noble metal Inorganic materials 0.000 claims description 3
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 2
- 239000005751 Copper oxide Substances 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 150000004699 copper complex Chemical class 0.000 claims description 2
- -1 copper organic acid salt Chemical class 0.000 claims description 2
- 229910000431 copper oxide Inorganic materials 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 239000011135 tin Substances 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 150000001298 alcohols Chemical class 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 15
- 238000010248 power generation Methods 0.000 abstract description 10
- 239000000463 material Substances 0.000 description 23
- 238000002161 passivation Methods 0.000 description 22
- 239000004411 aluminium Substances 0.000 description 21
- 238000003475 lamination Methods 0.000 description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 15
- 238000010586 diagram Methods 0.000 description 14
- 229920005591 polysilicon Polymers 0.000 description 13
- 238000007747 plating Methods 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000006056 electrooxidation reaction Methods 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 229940116411 terpineol Drugs 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- IFPMZBBHBZQTOV-UHFFFAOYSA-N 1,3,5-trinitro-2-(2,4,6-trinitrophenyl)-4-[2,4,6-trinitro-3-(2,4,6-trinitrophenyl)phenyl]benzene Chemical compound [O-][N+](=O)C1=CC([N+](=O)[O-])=CC([N+]([O-])=O)=C1C1=C([N+]([O-])=O)C=C([N+]([O-])=O)C(C=2C(=C(C=3C(=CC(=CC=3[N+]([O-])=O)[N+]([O-])=O)[N+]([O-])=O)C(=CC=2[N+]([O-])=O)[N+]([O-])=O)[N+]([O-])=O)=C1[N+]([O-])=O IFPMZBBHBZQTOV-UHFFFAOYSA-N 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052810 boron oxide Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 2
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 2
- 229940112669 cuprous oxide Drugs 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910021471 metal-silicon alloy Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- QGMWCJPYHVWVRR-UHFFFAOYSA-N tellurium monoxide Chemical compound [Te]=O QGMWCJPYHVWVRR-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920002319 Poly(methyl acrylate) Polymers 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229920006217 cellulose acetate butyrate Polymers 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- SBTSVTLGWRLWOD-UHFFFAOYSA-L copper(ii) triflate Chemical compound [Cu+2].[O-]S(=O)(=O)C(F)(F)F.[O-]S(=O)(=O)C(F)(F)F SBTSVTLGWRLWOD-UHFFFAOYSA-L 0.000 description 1
- ZKXWKVVCCTZOLD-UHFFFAOYSA-N copper;4-hydroxypent-3-en-2-one Chemical compound [Cu].CC(O)=CC(C)=O.CC(O)=CC(C)=O ZKXWKVVCCTZOLD-UHFFFAOYSA-N 0.000 description 1
- CLUOTFHJTGLPSG-UHFFFAOYSA-L copper;7,7-dimethyloctanoate Chemical compound [Cu+2].CC(C)(C)CCCCCC([O-])=O.CC(C)(C)CCCCCC([O-])=O CLUOTFHJTGLPSG-UHFFFAOYSA-L 0.000 description 1
- BESNXTPHHWCFPI-UHFFFAOYSA-N copper;triphenylphosphane Chemical compound [Cu].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 BESNXTPHHWCFPI-UHFFFAOYSA-N 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000011416 infrared curing Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000003847 radiation curing Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910021484 silicon-nickel alloy Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
Abstract
The invention provides a solar cell production method and a solar cell, and relates to the technical field of photovoltaics. The solar cell production method includes: providing a silicon substrate; providing an aluminum layer on a silicon substrate; printing a metal paste on the aluminum layer, the metal paste comprising a copper-containing compound; sintering the metal slurry to form a copper-containing protective layer, and forming copper-aluminum oxide at the interface of the copper-containing protective layer and the aluminum layer; and electroplating an electrode portion on the copper-containing protective layer. In the process of forming the copper-containing protective layer by sintering, a copper-containing compound in the copper-containing protective layer and an aluminum-containing compound in the aluminum layer are subjected to chemical reaction, the copper-containing compound reduces the free energy of the copper-containing protective layer/glass and aluminum layer/glass interface, the wettability and the mechanical bonding strength of the glass on the copper-containing protective layer and the aluminum layer are enhanced, and copper aluminum oxide is generated at the interface of the copper-containing protective layer and the aluminum layer, so that the aluminum layer and the copper-containing protective layer have very high bonding strength, the bonding force of an electrode and a silicon substrate is ensured, and the power generation efficiency and the reliability of the solar cell are improved.
Description
Technical Field
The invention relates to the technical field of solar photovoltaics, in particular to a solar cell production method and a solar cell.
Background
At present, the following methods are mainly used for producing electrodes of silicon substrate-based solar cells: and (4) screen printing and plating. Since screen printing has problems of limited accuracy, large series resistance of electrodes to be formed, high cost, and the like, the plating method is being widely used.
However, the inventors have found that the following disadvantages exist in the conventional method for producing an electrode by plating: the bonding force between the electrode formed by the existing plating mode and the silicon substrate is poor, and the power generation efficiency and the reliability of the solar cell are seriously influenced.
Disclosure of Invention
The invention provides a solar cell production method and a solar cell, and aims to solve the problem that an electrode formed by an existing plating mode is poor in binding force with a silicon substrate.
According to a first aspect of the present invention, there is provided a solar cell production method comprising the steps of:
providing a silicon substrate;
providing an aluminum layer on the silicon substrate;
printing a metal paste on the aluminum layer, wherein the metal paste comprises a first inorganic binder, and the first inorganic binder is a copper-containing compound;
sintering the metal slurry to form a copper-containing protective layer, wherein copper-aluminum oxide is formed at the interface of the copper-containing protective layer and the aluminum layer; and electroplating an electrode portion on the copper-containing protective layer.
In the embodiment of the invention, before the electrode part is electroplated, metal slurry is printed on the aluminum layer, the metal slurry comprises a first inorganic adhesive, the first inorganic adhesive is a copper-containing compound, in the process of sintering the metal slurry to form a copper-containing protective layer, the copper-containing compound in the copper-containing protective layer and an aluminum-containing compound in the aluminum layer are subjected to chemical reaction, in the chemical reaction, the copper-containing compound can reduce the free energy of the copper-containing protective layer/glass and aluminum layer/glass interface, the wettability and the mechanical bonding strength of the glass to the copper-containing protective layer and the aluminum layer are enhanced, and meanwhile, copper aluminum oxide is generated at the interface of the copper-containing protective layer and the aluminum layer in the chemical reaction, so that Cu/Cu oxide is formed at the interface of the copper-containing protective layer and the aluminum layer n O/(Cu x Al y )O z The structure, above-mentioned structure makes and has very high bonding strength between aluminium lamination and the copper-containing protective layer, and copper-containing protective layer high strength adheres to on the aluminium lamination promptly, has avoided the aluminium lamination to receive electrochemical corrosion at the in-process of electroplating electrode portion, has protected the primitive capability of aluminium lamination from the at utmost, has ensured the cohesion of aluminium lamination and silicon substrate, and then has ensured the cohesion of electrode with the silicon substrate, has promoted solar cell's generating efficiency and reliability. And before the electrode part is electroplated, a copper-containing protective layer is formed on the aluminum layer, the copper-containing protective layer can prevent the electrode part from permeating into the aluminum layer to a great extent, and auxiliary materials and the like in the process of electroplating the electrode part can be prevented from permeating into the aluminum layer to a great extent, so that the aluminum layer can keep the original performance to the greatest extent, the influence on the bonding capacity of the aluminum layer and the silicon substrate due to the fact that the electrode part, the auxiliary materials and the like in the process of electroplating the electrode part permeate into the aluminum layer is avoided to the greatest extent, the bonding force of the aluminum layer and the silicon substrate is ensured, the bonding force of the electrode and the silicon substrate is further ensured, and the power generation efficiency and the reliability of the solar cell are improved. In addition, the copper-containing protective layer has excellent conductivity and a larger surface area, can improve the electrical connection with the electrode part, and simultaneously improves the conductivity between the electrode and the silicon substrate so as to further improve the power generation efficiency and the reliability of the solar cell. Meanwhile, the electrode part is formed in an electroplating mode, so that the using amount of metal materials can be reduced, particularly, the using amount of silver materials is greatly reduced, the production cost can be reduced, the manufacturing precision is high, the operation is relatively simple, and the large-scale industrial application is facilitated.
According to a second aspect of the present invention, there is provided a solar cell, which is prepared by using any one of the solar cell production methods described above.
The solar cell has the same or similar beneficial effects as the solar cell production method, and the details are not repeated herein to avoid repetition.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the description below are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive labor.
Fig. 1 shows a flow chart of the steps of a method of producing a solar cell in an embodiment of the invention;
FIG. 2 shows a schematic structural diagram of a solar cell in an embodiment of the invention;
FIG. 3 shows a schematic structural diagram of another solar cell in an embodiment of the invention;
fig. 4 shows a schematic structural diagram of a further solar cell in an embodiment of the invention;
FIG. 5 shows a schematic structural diagram of a solar cell electrode in an embodiment of the invention;
FIG. 6 shows a schematic structural diagram of another solar cell electrode in an embodiment of the invention;
fig. 7 shows a schematic structural diagram of still another solar cell in an embodiment of the invention;
fig. 8 shows a schematic structural diagram of another solar cell according to an embodiment of the present invention.
Description of the figure numbering:
1-silicon substrate, 2-passivation film, 3-aluminum layer, 4-copper-containing protective layer, 5-electrode part, 51-first metal electrode layer, 52-second metal electrode layer, 53-third metal electrode layer, 6-main gate electrode, 7-fine gate electrode, 8-passivation anti-reflection layer, 9-tunneling layer, 10-doped polysilicon layer, 11-silicon substrate, 12-emitter, 13-front electrode, 14-back electrode, 15-p type polysilicon, 16-n type polysilicon, 17-n type electrode, 18-p type electrode.
Detailed Description
The inventors found that the main reason for poor bonding force between the electrode formed by the conventional plating method and the silicon substrate is: on one hand: the seed layer on the silicon substrate is subjected to electrochemical corrosion during the process of disposing the electrode portion, and the seed layer is subjected to electric corrosionThe seed layer structure is damaged after the chemical etching, so that the tensile force between the seed layer and the silicon substrate is reduced, the bonding capability of the seed layer and the silicon substrate is reduced, and the bonding capability of the seed layer and the silicon substrate is poor. On the other hand: the seed layer on the silicon substrate is not dense enough, so that other layers plated on the seed layer penetrate into the seed layer and auxiliary materials plated on other layers penetrate into the seed layer, however, the materials penetrating into the seed layer react with the seed layer to generate new substances, and the new substances can cause the glass body structure in the seed layer to be degraded, thereby reducing the bonding capability of the seed layer and the silicon substrate, and deteriorating the bonding capability of the seed layer and the silicon substrate. In the application, before the electrode part is electroplated, metal slurry is printed on the aluminum layer, the metal slurry comprises a first inorganic adhesive, the first inorganic adhesive is a copper-containing compound, in the process of sintering the metal slurry to form a copper-containing protective layer, the copper-containing compound in the copper-containing protective layer and an aluminum-containing compound in the aluminum layer are subjected to a chemical reaction, in the chemical reaction, the copper-containing compound can reduce the free energy of the copper-containing protective layer/glass and aluminum layer/glass interface, the wettability and the mechanical bonding strength of the glass to the copper-containing protective layer and the aluminum layer are enhanced, and meanwhile, copper aluminum oxide is generated at the interface of the copper-containing protective layer and the aluminum layer in the chemical reaction, so that Cu/Cu is formed at the interface of the copper-containing protective layer and the aluminum layer n O/(Cu x Al y )O z The structure, above-mentioned structure makes and has very high bonding strength between aluminium lamination and the copper-containing protective layer, and copper-containing protective layer high strength adheres to on the aluminium lamination promptly, has avoided the aluminium lamination to receive electrochemical corrosion at the in-process of electroplating electrode portion, has protected the primitive capability of aluminium lamination from the at utmost, has ensured the cohesion of aluminium lamination and silicon substrate, and then has ensured the cohesion of electrode with the silicon substrate, has promoted solar cell's generating efficiency and reliability. In addition, before the electrode part is electroplated, the copper-containing protective layer is formed on the aluminum layer, the copper-containing protective layer can prevent the electrode part from permeating into the aluminum layer to a great extent, and can prevent auxiliary materials and the like in the process of electroplating the electrode part from permeating into the aluminum layer to a great extent, so that the aluminum layer can keep the original performance to the maximum extent, and the problem of the aluminum layer due to the fact that the copper-containing protective layer is prevented from permeating into the aluminum layer to the great extentThe electrode part and auxiliary materials and the like in the process of electroplating the electrode part penetrate into the aluminum layer to influence the bonding capacity of the aluminum layer and the silicon substrate, so that the bonding force of the aluminum layer and the silicon substrate is ensured, the bonding force of the electrode and the silicon substrate is further ensured, and the power generation efficiency and the reliability of the solar cell are improved. In addition, the copper-containing protective layer has excellent conductivity and larger surface area, can improve the electrical connection with the electrode part, and simultaneously improves the conductivity between the electrode and the silicon substrate so as to further improve the power generation efficiency and the reliability of the solar cell. Meanwhile, the electrode part is formed in an electroplating mode, so that the using amount of metal materials can be reduced, particularly, the using amount of silver materials is greatly reduced, the production cost can be reduced, the manufacturing precision is high, the operation is relatively simple, and the large-scale industrial application is facilitated.
Fig. 1 shows a flow chart of the steps of a method for producing a solar cell in an embodiment of the invention. Referring to fig. 1, the method includes the steps of:
step S1, a silicon substrate is provided.
The silicon substrate may be composed of a silicon substrate and a conductive region. The silicon substrate mainly comprises monocrystalline silicon and polycrystalline silicon, and the specific material of the silicon substrate is not limited. The conductive region and the silicon substrate cooperate primarily to separate and transport charge carriers in the solar cell.
The conductive region may be located in the silicon substrate, and in particular, the conductive region may be doped from the silicon substrate. For example, the silicon substrate may be a monocrystalline or polycrystalline silicon wafer having a conductivity type, and the conductivity type dopant is an n-type or P-type dopant, that is, the conductivity type dopant may be an n-type impurity such As a group V element including phosphorus (P), arsenic (As), bismuth (Bi), antimony (Sb), or the like. Alternatively, the dopant of the conductivity type may be a p-type impurity such as a group III element including boron (B), aluminum (Al), gallium (Ga), indium (In), or the like. A conductive region of the second conductive type having a relatively high doping concentration may be formed in one side surface of the silicon substrate, and a conductive region of the first conductive type having a higher doping concentration than the silicon substrate may be formed on the other side surface of the silicon substrate, and the conductive region of the first conductive type may be formed of doped polysilicon or amorphous silicon.
Alternatively, the conductive region may be formed by a thermal process. Alternatively, the conductive region is deposited on one side of the silicon substrate. For example, the conductive region is formed by Chemical Vapor Deposition (CVD), Low Pressure Chemical Vapor Deposition (LPCVD), Atmospheric Pressure Chemical Vapor Deposition (APCVD), Plasma Enhanced Chemical Vapor Deposition (PECVD), thermal growth, sputtering, and the like.
Textured or textured structures may be formed on the surface of the silicon substrate for increasing the solar radiation collection effect. The textured surface or textured structure is a surface having a regular or irregular shape for scattering incident light, reducing the amount of light reflected back from the surface of the solar cell. A passivation film may also be formed on the textured surface or textured structure to further improve the light absorption performance of the solar cell. Different passivation film stacks may be formed on the side of the silicon substrate receiving light and the side of the backlight, respectively, and the passivation films may include one or more layers of dielectric materials. For example, a silicon oxide passivation film + a silicon nitride passivation film is used on the side of the silicon substrate receiving light, and an aluminum oxide passivation film + a silicon nitride passivation film is used on the side of the silicon substrate backlight, wherein the aluminum oxide passivation film may have a thickness of 6nm, and the silicon nitride passivation film may have a thickness of 70 nm. The passivation film has a plurality of contact holes formed therein, and may be formed by wet etching, ablation, or the like. The contact hole does not penetrate through the thickness of the passivation film, or the contact hole can penetrate through the passivation film to be in direct contact with the conductive region. In the case that the contact hole may be directly contacted with the conductive region through the passivation film, attention needs to be paid to the selection of laser process parameters so as to reduce the damage of the laser to the silicon substrate as much as possible.
In the case that a conductive region of a second conductive type is formed in one side surface of a silicon substrate and a conductive region of a first conductive type is formed on the other side surface of the silicon substrate, a first passivation film and a second passivation film provided with openings are respectively formed on the conductive region of the second conductive type and the conductive region of the first conductive type, and a second electrode and a first electrode are respectively in contact with the conductive region of the second conductive type and the conductive region of the first conductive type through the openings. Alternatively, a plurality of doped polysilicon regions of a first conductivity type are formed on the back surface of the silicon substrate and a plurality of conductive regions of a second conductivity type are formed in the back surface, a passivation film provided with a plurality of openings is formed on the conductive regions of the second conductivity type and the conductive regions of the first conductivity type, and the first electrode and the second electrode are in contact with the conductive regions of the first conductivity type and the conductive regions of the second conductivity type through the openings, respectively. The first electrode and the second electrode have opposite polarities.
Step S2, an aluminum layer is provided on the silicon substrate.
An aluminum layer may be disposed on the polysilicon conductive region on the silicon substrate. Alternatively, an aluminum layer may be formed on a dielectric layer comprising silicon nitride. The manner of providing the aluminum layer on the silicon substrate is not particularly limited. For example, a slurry containing aluminum particles can be deposited on a silicon substrate and then cured to form an aluminum layer on the silicon substrate.
Alternatively, a printing technique (including screen printing, spin coating, ink jet printing, and the like) may be used to print an aluminum-containing paste on a silicon substrate, and then sinter or cure the aluminum-containing paste to form an aluminum layer in electrical contact with the silicon substrate. The curing may be volatilization or the like, and specifically may be molding into a solid at a relatively low temperature. The curing process may be selected from thermal curing, ultraviolet curing, infrared curing and any other radiation curing energy process. The aluminum layer in electrical contact with the silicon substrate as a whole enables separation, transport and collection of carriers. In the case where a passivation film is provided on a silicon substrate, an aluminum-containing paste is printed in an opening region of the passivation film. The printed pattern may be continuous strips or discontinuous dots, and the size of the dots may be 2mm × 2mm, 2mm × 1mm, 1mm × 0.8mm, 1mm × 1 mm.
Alternatively, the aluminum-containing slurry may include aluminum particles, a first liquid binder, and a second inorganic binder. The average particle diameter (D50) of the aluminum particles is preferably 2um or less, and the aluminum particles having the average particle diameter can provide excellent conductivity to the aluminum layer. The first liquid binder is an organic vehicle and includes a first organic binder and a first solvent. The first organic binder may include a cellulose-based polymer, and a (meth) acrylateAt least one of a polymer and a rosin resin. For example, the first organic binder may be ethyl cellulose or cellulose acetate butyrate. The first solvent may be at least one of an alcohol (e.g., terpineol, butyl carbitol), an ester (e.g., an ester containing a hydroxyl group, butyl carbitol acetate, alcohol ester dodeca). For example, the first solvent may use a combination of terpineol and butyl carbitol acetate. The second inorganic binder may be an oxide of the glass frit. For example, the second inorganic binder may be a substance mainly composed of a metal oxide, and is usually in the form of glassy particles. The oxide constituting the glass frit is not particularly limited. For example, the second inorganic binder may contain lead oxide (PbO), vanadium oxide (V) 2 O 5 ) Bismuth oxide (Bi) 2 O 3 ) Zinc oxide (ZnO), boron oxide (B) 2 O 3 ) Silicon oxide (SiO) 2 ) Alumina (Al) 2 O 3 ) Tellurium oxide (TeO) 2 ) At least one of (1). The second inorganic binder preferably contains V 2 O 5 And/or ZnO, more preferably V 2 O 5 . The second inorganic binder can react with silicon in the silicon substrate, so that the bonding force between the aluminum layer and the silicon substrate can be improved to a great extent, the bonding force between the electrode and the silicon substrate is further ensured, and the power generation efficiency and reliability of the solar cell are improved.
Optionally, the glass transition temperature of the second inorganic binder is less than or equal to 450 ℃, so that the aluminum-containing slurry has excellent softening performance and is easy to soften.
Step S3, printing a metal paste on the aluminum layer, where the metal paste includes a first inorganic binder, and the first inorganic binder is a copper-containing compound.
The material of the metal paste is not particularly limited, except for the copper element. A metal paste may be printed (including screen printing, spin coating, ink jet printing, and the like) on the aluminum layer, the metal paste including a first inorganic binder, the first inorganic binder being a copper-containing compound.
Alternatively, the copper-containing compound may be at least one of a copper complex, a copper organic acid salt, and a copper oxide. For example, the copper-containing compound may be at least one of copper acetylacetonate, copper neodecanoate, cuprous oxide, copper bis (8-quinolinolato), copper bis (triphenylphosphine) borohydride, and copper trifluoromethanesulfonate. The copper-containing compound of the above composition is easy to react with an aluminum-containing compound in the sintering process to produce copper aluminum oxide.
Optionally, in the metal paste, the mass ratio of the copper-containing compound is 0.1% -5%, so that the formed copper-containing protective layer has excellent conductivity and good bonding strength.
Optionally, the metal paste may further include: a second liquid binder including a second organic binder and a second solvent. The second liquid binder is an organic vehicle and contains a second organic binder and a second solvent. The second organic binder may be at least one of a cellulose-based polymer, a (meth) acrylate-based polymer, and a rosin-based resin. For example, the second organic binder may be a combination of ethylcellulose and polymethyl acrylate. The second solvent may be at least one of an alcohol (e.g., terpineol, butyl carbitol), an ester (e.g., an ester containing a hydroxyl group, butyl carbitol acetate, alcohol ester dodeca).
Optionally, the metal paste may further include a third inorganic binder; the third inorganic binder is an oxide of a glass frit. The third inorganic binder can be used as a catalyst, and can accelerate and catalyze the reaction of an aluminum-containing compound in the aluminum layer and a copper-containing compound in the copper-containing protective layer in the sintering process, so that copper-aluminum oxide is more easily formed. More specifically, the third inorganic binder can transport the copper-containing compound in the copper-containing protective layer to the aluminum layer to aid in the formation of a bond, effectively increasing the reaction kinetics. It should be noted that some copper-containing compounds may also be used as a fluxing agent in place of the third inorganic binder.
Alternatively, the third inorganic binder may be a substance having a metal oxide as a main material, and is generally in the form of glassy particles. The oxide constituting the glass frit is not particularly limited. For example, the third inorganic binder may contain lead oxide (PbO), or the likeZinc (ZnO), boron oxide (B) 2 O 3 ) Silicon oxide (SiO) 2 ) Alumina (Al) 2 O 3 ) Tellurium oxide (TeO) 2 ) At least one of (a). The third inorganic binder preferably contains PbO and/or ZnO, and more preferably PbO.
Optionally, the glass transition temperature of the third inorganic binder is less than or equal to 500 ℃, so that the metal paste has excellent softening performance and is easy to soften.
Optionally, the metal in the metal paste may be a noble metal, and the copper-containing protective layer of the material has good conductivity, so that the electrical connection with the electrode part can be further improved, and the conductivity between the electrode and the silicon substrate can be improved, so as to further improve the power generation efficiency and reliability of the solar cell. The noble metal may be at least one of silver (Ag), ruthenium (Ru), rhodium (Rh), palladium (Pd), and iridium (Ir).
And step S4, sintering the metal slurry to form a copper-containing protective layer, wherein a copper aluminum oxide is formed at the interface of the copper-containing protective layer and the aluminum layer.
And sintering the metal slurry to form the copper-containing protective layer. In the process of forming the copper-containing protective layer on the aluminum layer by sintering, the copper-containing compound in the copper-containing protective layer and the aluminum-containing compound in the aluminum layer are subjected to chemical reaction, in the chemical reaction, the copper-containing compound can reduce the free energy of the copper-containing protective layer/glass and aluminum layer/glass interface, the wettability and the mechanical bonding strength of the glass to the copper-containing protective layer and the aluminum layer are enhanced, and meanwhile, copper aluminum oxide is generated at the interface of the copper-containing protective layer and the aluminum layer in the chemical reaction, so that Cu/Cu is formed at the interface of the copper-containing protective layer and the aluminum layer n O/(Cu x Al y )O z The structure, above-mentioned structure makes and has very high bonding strength between aluminium lamination and the copper-containing protective layer, and copper-containing protective layer high strength adheres to on the aluminium lamination promptly, has avoided the aluminium lamination to receive electrochemical corrosion at the in-process of electroplating electrode portion, has protected the primitive capability of aluminium lamination from the at utmost, has ensured the cohesion of aluminium lamination and silicon substrate, and then has ensured the cohesion of electrode with the silicon substrate, has promoted solar cell's generating efficiency and reliability. Furthermore, the copper-containing protective layer has excellent conductivity and a large surface area, which can be increasedThe solar cell is electrically connected with the electrode part, and simultaneously, the conductivity between the electrode and the silicon substrate is improved, so that the power generation efficiency and the reliability of the solar cell are further improved. And before the electrode part is electroplated, a copper-containing protective layer is formed on the aluminum layer, the copper-containing protective layer can prevent the electrode part from permeating into the aluminum layer to a great extent, and auxiliary materials and the like in the process of electroplating the electrode part can be prevented from permeating into the aluminum layer to a great extent, so that the aluminum layer can keep the original performance to the greatest extent, the influence on the bonding capacity of the aluminum layer and the silicon substrate due to the fact that the electrode part, the auxiliary materials and the like in the process of electroplating the electrode part permeate into the aluminum layer is avoided to the greatest extent, the bonding force of the aluminum layer and the silicon substrate is ensured, the bonding force of the electrode and the silicon substrate is further ensured, and the power generation efficiency and the reliability of the solar cell are improved. In addition, (Cu) x Al y )O z X, y, z in (1), and Cu n N in O is determined according to actual conditions, and this is not particularly limited in the embodiments of the present application.
The mass ratio of the copper-containing compound in the copper-containing protective layer is 0.1-1%. The copper-containing compound can fully reduce the free energy of the interface of the copper-containing protective layer/glass and the aluminum layer/glass, enhances the wettability and the mechanical bonding strength of the glass to the copper-containing protective layer and the aluminum layer, and simultaneously is easy to generate copper aluminum oxide in chemical reaction so as to form Cu/Cu between the aluminum layer and the copper-containing protective layer n O/(Cu x Al y )O z And (5) structure.
Optionally, copper aluminum oxide has the spinel structure, the spinel structure makes and has higher bonding strength between aluminium lamination and the copper-containing protective layer, copper-containing protective layer high strength adheres to on the aluminium lamination promptly, avoided the aluminium lamination to receive electrochemical corrosion at the in-process of electroplating electrode portion, the primitive quality of aluminium lamination has been protected to the at utmost, the cohesion of aluminium lamination with the silicon substrate has been ensured, and then the cohesion of electrode with the silicon substrate has been ensured, solar cell's generating efficiency and reliability have been promoted.
When the metal in the metal paste is silver, the metal paste contains silver particles, and the shape of the silver particles is not particularly limited, and for example, the silver particles may be spherical or flake (flake). Preferably, the silver particles are spherical, and the copper-containing protective layer has a higher conductive effect and a higher electrode strength. The average particle diameter (D50) of the silver particles is preferably less than or equal to 2 um.
Optionally, the aluminum layer comprises an aluminum-containing compound comprising an oxide of aluminum, and the aluminum layer of the above material is susceptible to a chemical reaction with the copper-containing compound of the copper-containing protective layer during sintering to form a copper-aluminum oxide, thereby facilitating the formation of Cu/Cu between the aluminum layer and the copper-containing protective layer n O/(Cu x Al y )O z And (5) structure.
For example, if the aluminum layer comprises aluminum oxide (Al) 2 O 3 ) If the metal paste contains silver, the copper-containing protective layer is a copper-containing silver protective layer, and if the copper-containing silver protective layer contains cuprous oxide (Cu) 2 O), during sintering, the following reaction takes place: cu 2 O+Al 2 O 3 →(CuAl)O，Cu 2 O is decomposed to Cu and the resulting (CuAl) O has a spinel structure, thus forming Cu/Cu between the Cu protective layer and the Al layer 2 The O/(CuAl) O structure ensures that the copper protective layer and the aluminum layer have high bonding strength, and solves the problem that the silver protective layer and the aluminum layer cannot be or are difficult to bond.
Optionally, in the process of sintering the metal slurry on the aluminum layer to form the copper-containing protective layer, the sintering temperature is 700-.
Fig. 2 shows a schematic structural diagram of a solar cell according to an embodiment of the present invention. Referring to fig. 2, an aluminum layer 3 is provided on a silicon substrate 1, and a copper-containing protective layer 4 is located between the aluminum layer 3 and an electrode portion 5. Referring to fig. 2, a copper-containing protective layer 4 is positioned between the aluminum layer 3 and the electrode portion 5. The copper-containing protective layer covers the surface of the aluminum layer 3 remote from the silicon substrate 1. The electrode portion 5 includes at least two metal electrode layers. As shown in fig. 2, the electrode portion 5 includes 3 metal electrode layers, which are a first metal electrode layer 51, a second metal electrode layer 52, and a third metal electrode layer 53. Wherein, the first metal electrode layer 51 is closest to the first metal electrode layer 51 of the copper-containing protection layer 4.
Fig. 3 shows a schematic structural diagram of another solar cell in an embodiment of the invention. Optionally, as shown in fig. 3, the copper-containing protection layer 4 covers all surfaces of the aluminum layer 3 opposite to the electrode portion 5, so as to isolate the aluminum layer 3 from the electrode portion 5, and with respect to fig. 2, the copper-containing protection layer 4 covers the aluminum layer 3 more comprehensively, and completely isolates the aluminum layer 3 from the electrode portion 5, thereby more completely preventing the electrode portion 5 from penetrating into the aluminum layer 3, more completely preventing auxiliary materials and the like in the process of electroplating the electrode portion 5 from penetrating into the aluminum layer 3, and having a better blocking effect.
It should be noted that, in the process of disposing the aluminum layer, after depositing the aluminum-containing slurry, the aluminum-containing slurry may be sintered at a low temperature without sintering, and when sintering the metal slurry to form the copper-containing protective layer, the aluminum-containing slurry is sintered at the same time, which is simple in process and can reduce cost, and this is not particularly limited in the embodiment of the present application.
And step S5, plating an electrode portion on the copper-containing protective layer.
Referring to fig. 2, an electrode portion 5 is plated on the copper-containing protective layer 4. The electrode portion 5 may include at least two metal electrode layers. The metal materials contained in the metal electrode layers of the electrode portion 5 are different from each other. The electroplating may be electrolytic plating. The electrode part is formed in an electroplating mode, so that the using amount of metal materials can be reduced, particularly, the use amount of silver materials is greatly reduced, the production cost can be reduced, the manufacturing precision is high, the operation is relatively simple, and the large-scale industrial application is facilitated.
Specifically, each metal electrode layer is electroplated on the copper-containing protective layer in sequence. Optionally, referring to fig. 2, the electrode portion includes a first metal electrode layer 51, a second metal electrode layer 52, and a third metal electrode layer 53 stacked in sequence, where the first metal electrode layer 51 is close to the copper-containing protective layer 4. Referring to fig. 2, a first metal electrode layer 51 is first electroplated on the copper-containing protective layer 4, then a second metal electrode layer 52 is electroplated on the first metal electrode layer 51, and then a third metal electrode layer 53 is electroplated on the second metal electrode layer 52.
Optionally, the first metal electrode layer 51 contains a first metal, the first metal contained in the first metal electrode layer 51 may be at least one of nickel, cobalt, titanium, and tungsten, and the first metal may form a low-resistance metal silicide material with the silicon substrate 1, so as to reduce the contact resistance between the silicon substrate 1 and the surface electrode, and improve the battery efficiency.
Optionally, after the first metal electrode layer 51 is formed by electroplating, the method may further include: sintering the silicon substrate 1 plated with the first metal electrode layer 51 in a nitrogen atmosphere and/or an inert gas atmosphere; the sintering temperature is 300-500 ℃, the sintering time is 0.5-2 minutes, and the first metal-silicon alloy can be formed, and the first metal-silicon alloy generally has lower resistance, can reduce loss and improve the conductivity between the electrode and the silicon substrate. For example, if the first metal electrode layer 51 is a nickel layer, the silicon substrate 1 plated with the first metal electrode layer 51 is sintered at 350 ℃ for 1 minute in a nitrogen atmosphere to form a low-resistance nickel-silicon alloy.
The first metal electrode layer 51 may be formed in all openings of the main gate formation region including the aluminum layer 3 and the fine gate formation region, that is, the first metal electrode layer 51 may be in contact with the copper-containing protective layer 4 in a region where the aluminum layer 3 is provided and in contact with the silicon substrate 1 in an open region (fine gate formation region) where the aluminum layer is not provided.
In the case where the electrode portion 5 includes 3 metal electrode layers, the second metal electrode layer 52 provided on the first metal electrode layer 51 and having a metal different from the first metal as a main component can function to improve electrical characteristics because it has a lower resistance. For example, the second metal electrode layer 52 has a lower resistance than the first metal electrode layer 51. Alternatively, the second metal electrode layer 52 may include at least one of aluminum, silver, gold, nickel, tungsten, titanium, and cobalt.
The third metal electrode layer 53 provided on the second metal electrode layer 52 is a portion connected to another solar cell or a wiring material for external connection, and may include a material having a characteristic of making excellent connection with the wiring material. The third metal contained in the third metal electrode layer 53 may include at least one of silver, tin, nickel, and vanadium. The wiring material may be solder tape.
Optionally, referring to fig. 2, the aluminum layer 3, the copper-containing protective layer 4, and the electrode portion 5 form an electrode of the solar cell, and the thickness h1 of the electrode is 5-50 um. The thickness h1 of the electrode is the dimension of the electrode in the direction in which the silicon substrate 1 and the electrode are stacked. The electrode with the thickness has a good conductive effect.
In the embodiment of the present invention, the aluminum layer 3, the copper-containing protective layer 4, and the electrode portion 5 form an electrode of the solar cell. The electrode may be a positive electrode or a negative electrode, and the electrode may be a front electrode located on the light-facing side of the silicon substrate, or may be a back electrode located on the backlight side of the silicon substrate, which is not limited in the embodiment of the present invention. For example, the aluminum layer 3, the copper-containing protective layer 4, and the electrode portion 5 form a main gate electrode of the solar cell. Fig. 4 shows a schematic structural diagram of another solar cell according to an embodiment of the present invention. The fine gate electrode of the solar cell may be composed of only the electrode part 5. Alternatively, the main gate electrode and the fine gate electrode may be respectively located at both sides of the silicon substrate. Fig. 5 shows a schematic structural diagram of a solar cell electrode according to an embodiment of the present invention. Fig. 6 shows a schematic structural diagram of another solar cell electrode in an embodiment of the invention. In fig. 5, the main gate electrode 6 is a continuous strip. In fig. 6 the main gate electrode 6 is discontinuously arranged in dots. In both fig. 5 and 6, 7 are fine gate electrodes.
Before the electroplating of the electrode sections, at least one electrical connection point may be provided on the silicon substrate, said electrical connection point being formed by printing a silver-or aluminium-containing metal paste and annealing. The electric contact point is used for connecting the negative electrode of the electroplating power supply during electroplating so as to form each metal electrode layer of the electroplated electrode part in the contact forming area on the surface of the silicon substrate.
Optionally, the electrical connection points may be symmetrically arranged on the silicon substrate, may be arranged on the whole main gate region to be formed, or may be formed in a plurality of discontinuous points in the main gate region, the electrical connection points in different main gate regions may be formed at one time by printing, the process is simple, and no additional power supply point is required. During electroplating, the metal electrode layer covers the point patterns to form a shape with a thin middle part and a thick edge.
Alternatively, the contact point may be formed not in the main gate region but on the deposited passivation film and located in the vicinity of the edge portion of the silicon substrate face or each corner portion of the silicon substrate. Such contact points can be formed by printing and sintering a burn-through metal electrode paste, for example, a conventional sintered Ag paste or Al paste. The distance between each contact point and the center of the silicon substrate is basically equal, so that the plating speed of each contact area is basically consistent during plating. Although the additional arrangement of the power supply points brings about a certain process and cost increase, the overall cost is less influenced because the number of the power supply points is smaller in the local arrangement. From the viewpoint of increasing the reliability of the battery pack, since the contact forming regions are formed by depositing the plated metal electrode layer and have substantially uniform heights throughout, stable and reliable connection can be obtained when the interconnection materials are connected.
Fig. 7 shows a schematic structural diagram of another solar cell according to an embodiment of the present invention. Fig. 8 shows a schematic structural diagram of another solar cell according to an embodiment of the present invention. Alternatively, referring to fig. 7 and 8, the solar cell may further include a passivated anti-reflection layer 8, and in fig. 7, the silicon substrate 1 may be composed of a silicon substrate 11 and an emitter 12 diffused on the silicon substrate 11, where the emitter 12 exists as a conductive region. The solar cell may further comprise a passivating antireflective layer 8, a tunneling layer 9, a doped polysilicon layer 10. Fig. 7 shows a double-sided battery, and a front electrode 13 and a back electrode 14 are respectively disposed on both sides of a silicon substrate 11. Fig. 8 shows a back junction cell, in fig. 8, the silicon substrate 1 is composed of a silicon substrate 11 and p-type polysilicon 15 and n-type polysilicon 16 deposited on the silicon substrate 11, the p-type polysilicon 15 and the n-type polysilicon 16 exist as conductive regions, the n-type electrode 17 is electrically contacted with the n-type polysilicon 16, and the p-type electrode 18 is electrically contacted with the p-type polysilicon 15. In fig. 2, 3, 4, 7, and 8, 2 is a passivation film.
In an embodiment of the present invention, a solar cell is further provided, and the solar cell is prepared by any one of the foregoing solar cell production methods. The solar cell comprises a silicon substrate 1, an aluminum layer 3, a copper-containing protective layer 4 and an electrode part 5, wherein the aluminum layer 3 is positioned on the silicon substrate 1, the aluminum layer 3 comprises an aluminum-containing compound, the copper-containing protective layer 4 is positioned on the aluminum layer 3, the copper-containing protective layer 4 comprises a copper-containing compound, and the electrode part 5 is positioned on the copper-containing protective layer 4. Specifically, the solar cell may refer to the description of the foregoing method embodiment, and fig. 2 to 8. The solar cell has the same or similar beneficial effects as the solar cell production method, and the details are not repeated herein in order to avoid repetition.
It should be noted that, for simplicity of description, the method embodiments are described as a series of acts or combination of acts, but those skilled in the art will recognize that the embodiments are not limited by the order of acts described, as some steps may occur in other orders or concurrently depending on the embodiments. Further, those of skill in the art will recognize that the embodiments described in this specification are presently preferred embodiments and that no single embodiment of the present disclosure is necessarily required for all such variations and modifications.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
While the present invention has been described with reference to the embodiments shown in the drawings, the present invention is not limited to the embodiments, which are illustrative and not restrictive, and it will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (14)
1. A solar cell production method is characterized by comprising the following steps:
providing a silicon substrate;
providing an aluminum layer on the silicon substrate;
printing a metal paste on the aluminum layer, wherein the metal paste comprises a first inorganic binder, and the first inorganic binder is a copper-containing compound;
sintering the metal slurry to form a copper-containing protective layer, wherein a copper aluminum oxide is formed at the interface of the copper-containing protective layer and the aluminum layer;
and electroplating an electrode part on the copper-containing protective layer.
2. The solar cell production method according to claim 1, wherein the step of providing an aluminum layer on the silicon substrate comprises:
printing an aluminum-containing slurry on the silicon substrate, and sintering or curing the aluminum-containing slurry.
3. The solar cell production method according to claim 2, wherein the aluminum-containing paste comprises aluminum particles, a first liquid binder, and a second inorganic binder; the average particle diameter of the aluminum particles is less than or equal to 2 um; the first liquid binder comprises a first organic binder and a first solvent; the second inorganic binder is an oxide of a glass frit.
4. The method for producing a solar cell according to claim 3, wherein the first organic binder is at least one of a cellulose-based polymer, an acrylate-based polymer, and a rosin-based resin;
the first solvent is at least one of alcohols and esters;
the second inorganic binder has a glass transition temperature of less than or equal to 450 ℃.
5. The solar cell production method of claim 1, wherein the metal paste further comprises a second liquid binder, a third inorganic binder; the third inorganic binder is an oxide of a glass frit; the second liquid binder comprises a second organic binder and a second solvent; the second organic adhesive is at least one of cellulose-series polymer, acrylate-series polymer and rosin-series resin; the second solvent is at least one of alcohols and esters;
the third inorganic binder has a glass transition temperature of less than or equal to 500 ℃.
6. The solar cell production method according to any one of claims 1 to 5, wherein the electrode portion includes a first metal electrode layer adjacent to the copper-containing protective layer, and after the first metal electrode layer is formed by electroplating, the method further comprises:
sintering the silicon substrate electroplated with the first metal electrode layer in a nitrogen environment and/or an inert gas environment; the sintering temperature is 300-500 ℃, and the sintering time is 0.5-2 minutes.
7. The solar cell production method according to any one of claims 1 to 5, wherein the copper-containing compound is at least one of a copper complex, a copper organic acid salt, and a copper oxide;
the mass ratio of the copper-containing compound in the metal slurry is 0.1-1%.
8. The solar cell production method according to claim 7, wherein the copper aluminum oxide has a spinel structure.
9. Solar cell production method according to any of claims 1-5, characterized in that the metal in the metal paste is a noble metal.
10. The method for producing a solar cell as claimed in any one of claims 1 to 5, wherein the sintering temperature is 700-1000 ℃ during the step of sintering the metal paste to form the copper-containing protective layer.
11. The solar cell production method according to any one of claims 1 to 5, wherein the electrode portion comprises a first metal electrode layer, a second metal electrode layer, and a third metal electrode layer, which are sequentially stacked, wherein the first metal electrode layer is adjacent to the copper-containing protective layer, and the first metal electrode layer comprises at least one of nickel, tungsten, titanium, and cobalt; the second metal electrode layer comprises at least one of aluminum, silver, gold, nickel, tungsten, titanium and cobalt; the third metal electrode layer comprises at least one of silver, tin, nickel and vanadium.
12. The method for producing the solar cell according to any one of claims 1 to 5, wherein the aluminum layer, the copper-containing protective layer and the electrode part form an electrode of the solar cell, and the thickness of the electrode is 5 to 50 um; the thickness of the electrode is a dimension of the electrode in a direction in which the silicon substrate and the electrode are stacked.
13. Solar cell production method according to any one of claims 1 to 5, wherein the copper-containing protective layer covers all surfaces of the aluminum layer opposite the electrode portion to isolate the aluminum layer from the electrode portion.
14. A solar cell, characterized in that it is produced using a solar cell production method according to any one of claims 1 to 13.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110316377.8A CN115132859B (en) | 2021-03-24 | 2021-03-24 | Solar cell production method and solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110316377.8A CN115132859B (en) | 2021-03-24 | 2021-03-24 | Solar cell production method and solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115132859A true CN115132859A (en) | 2022-09-30 |
| CN115132859B CN115132859B (en) | 2023-07-14 |
Family
ID=83374781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110316377.8A Active CN115132859B (en) | 2021-03-24 | 2021-03-24 | Solar cell production method and solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115132859B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102468367A (en) * | 2010-11-18 | 2012-05-23 | 财团法人工业技术研究院 | Manufacturing method for light absorption layer and solar cell structure body using same |
| CN102763223A (en) * | 2010-02-12 | 2012-10-31 | 贺利氏北美肯肖霍肯贵金属材料有限责任公司 | Method for applying full back surface field and silver busbar to solar cell |
| CN108695009A (en) * | 2018-05-21 | 2018-10-23 | 江苏昊科汽车空调有限公司 | Modified high-efficient crystal silicon solar batteries and preparation method thereof |
-
2021
- 2021-03-24 CN CN202110316377.8A patent/CN115132859B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102763223A (en) * | 2010-02-12 | 2012-10-31 | 贺利氏北美肯肖霍肯贵金属材料有限责任公司 | Method for applying full back surface field and silver busbar to solar cell |
| CN102468367A (en) * | 2010-11-18 | 2012-05-23 | 财团法人工业技术研究院 | Manufacturing method for light absorption layer and solar cell structure body using same |
| CN108695009A (en) * | 2018-05-21 | 2018-10-23 | 江苏昊科汽车空调有限公司 | Modified high-efficient crystal silicon solar batteries and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115132859B (en) | 2023-07-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10424685B2 (en) | Method for manufacturing solar cell having electrodes including metal seed layer and conductive layer | |
| EP3509111B1 (en) | Solar cell | |
| EP2104147B1 (en) | Solar cell element and solar cell element manufacturing method | |
| EP2993700B1 (en) | Production method for a solar cell | |
| JP5258325B2 (en) | Solar cell module | |
| EP2662900A1 (en) | Solar cell, manufacturing method thereof, and solar cell module | |
| WO2015064696A1 (en) | Solar cell and solar cell module | |
| JP2008512858A (en) | Manufacturing process and manufacturing method of emitter wrap through back contact solar cell | |
| US8975109B2 (en) | Solar battery cell and production method thereof | |
| JP5822952B2 (en) | Solar cell and method for manufacturing solar cell | |
| JPWO2015030199A1 (en) | Solar cell element and manufacturing method thereof | |
| KR20180116424A (en) | Conductive paste and solar cell | |
| EP2688107B1 (en) | Solar cell and method for manufacturing the same | |
| EP2423967A2 (en) | Solar cell and method of manufacturing the same | |
| JP5140132B2 (en) | Back electrode type solar cell with wiring substrate, solar cell module, and method for manufacturing back electrode type solar cell with wiring substrate | |
| CN112151625B (en) | Solar cell, production method and cell module | |
| CN115132859B (en) | Solar cell production method and solar cell | |
| US10670187B2 (en) | Interdigitated back contact metal-insulator-semiconductor solar cell with printed oxide tunnel junctions | |
| CN115132858B (en) | Solar cell production method and solar cell | |
| CN115132860B (en) | Solar cell production method and solar cell | |
| CN217606829U (en) | Solar cell | |
| CN115132857A (en) | Solar cell production method and solar cell | |
| US20150207019A1 (en) | Method for Fabricating Crystalline Silicon Solar Cell Having Passivation Layer and Local Rear Contacts | |
| JP2008159997A (en) | Manufacturing method for solar cell element, and conductive paste |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |