CN115132859B - Solar cell production method and solar cell - Google Patents
Solar cell production method and solar cell Download PDFInfo
- Publication number
- CN115132859B CN115132859B CN202110316377.8A CN202110316377A CN115132859B CN 115132859 B CN115132859 B CN 115132859B CN 202110316377 A CN202110316377 A CN 202110316377A CN 115132859 B CN115132859 B CN 115132859B
- Authority
- CN
- China
- Prior art keywords
- copper
- layer
- aluminum
- electrode
- protective layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000010410 layer Substances 0.000 claims abstract description 205
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 157
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 156
- 239000010949 copper Substances 0.000 claims abstract description 151
- 229910052802 copper Inorganic materials 0.000 claims abstract description 129
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 125
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 107
- 239000010703 silicon Substances 0.000 claims abstract description 107
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 105
- 239000000758 substrate Substances 0.000 claims abstract description 104
- 229910052751 metal Inorganic materials 0.000 claims abstract description 100
- 239000002184 metal Substances 0.000 claims abstract description 100
- 239000011241 protective layer Substances 0.000 claims abstract description 97
- 238000000034 method Methods 0.000 claims abstract description 56
- 150000001875 compounds Chemical class 0.000 claims abstract description 38
- 238000005245 sintering Methods 0.000 claims abstract description 26
- 238000009713 electroplating Methods 0.000 claims abstract description 24
- UNRNJMFGIMDYKL-UHFFFAOYSA-N aluminum copper oxygen(2-) Chemical compound [O-2].[Al+3].[Cu+2] UNRNJMFGIMDYKL-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000002002 slurry Substances 0.000 claims abstract description 15
- 238000007639 printing Methods 0.000 claims abstract description 9
- 239000011230 binding agent Substances 0.000 claims description 49
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 18
- 229910052709 silver Inorganic materials 0.000 claims description 18
- 239000004332 silver Substances 0.000 claims description 18
- 239000002245 particle Substances 0.000 claims description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 239000002904 solvent Substances 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 150000002148 esters Chemical class 0.000 claims description 6
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 claims description 4
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 150000001298 alcohols Chemical class 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- -1 copper organic acid salt Chemical class 0.000 claims description 4
- 230000009477 glass transition Effects 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 229910052596 spinel Inorganic materials 0.000 claims description 4
- 239000011029 spinel Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 3
- 239000005751 Copper oxide Substances 0.000 claims description 3
- 229910000431 copper oxide Inorganic materials 0.000 claims description 3
- 229910000510 noble metal Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 150000004699 copper complex Chemical class 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 239000011135 tin Substances 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229920002678 cellulose Polymers 0.000 claims 2
- 239000001913 cellulose Substances 0.000 claims 2
- 229920006222 acrylic ester polymer Polymers 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229920000058 polyacrylate Polymers 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 16
- 238000010248 power generation Methods 0.000 abstract description 14
- 238000006243 chemical reaction Methods 0.000 abstract description 12
- 210000004027 cell Anatomy 0.000 description 59
- 239000000463 material Substances 0.000 description 26
- 238000002161 passivation Methods 0.000 description 24
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 15
- 229920005591 polysilicon Polymers 0.000 description 13
- 238000007747 plating Methods 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 238000006056 electrooxidation reaction Methods 0.000 description 6
- 230000000149 penetrating effect Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910018565 CuAl Inorganic materials 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229940116411 terpineol Drugs 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 229910052810 boron oxide Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229920003174 cellulose-based polymer Polymers 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910021471 metal-silicon alloy Inorganic materials 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- PGMYKACGEOXYJE-UHFFFAOYSA-N pentyl acetate Chemical compound CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- QGMWCJPYHVWVRR-UHFFFAOYSA-N tellurium monoxide Chemical compound [Te]=O QGMWCJPYHVWVRR-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920002319 Poly(methyl acrylate) Polymers 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229920006217 cellulose acetate butyrate Polymers 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- SBTSVTLGWRLWOD-UHFFFAOYSA-L copper(ii) triflate Chemical compound [Cu+2].[O-]S(=O)(=O)C(F)(F)F.[O-]S(=O)(=O)C(F)(F)F SBTSVTLGWRLWOD-UHFFFAOYSA-L 0.000 description 1
- ZKXWKVVCCTZOLD-UHFFFAOYSA-N copper;4-hydroxypent-3-en-2-one Chemical compound [Cu].CC(O)=CC(C)=O.CC(O)=CC(C)=O ZKXWKVVCCTZOLD-UHFFFAOYSA-N 0.000 description 1
- CLUOTFHJTGLPSG-UHFFFAOYSA-L copper;7,7-dimethyloctanoate Chemical compound [Cu+2].CC(C)(C)CCCCCC([O-])=O.CC(C)(C)CCCCCC([O-])=O CLUOTFHJTGLPSG-UHFFFAOYSA-L 0.000 description 1
- IURRXCRWRKQLGC-UHFFFAOYSA-N copper;quinolin-8-ol Chemical compound [Cu].C1=CN=C2C(O)=CC=CC2=C1.C1=CN=C2C(O)=CC=CC2=C1 IURRXCRWRKQLGC-UHFFFAOYSA-N 0.000 description 1
- BESNXTPHHWCFPI-UHFFFAOYSA-N copper;triphenylphosphane Chemical compound [Cu].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 BESNXTPHHWCFPI-UHFFFAOYSA-N 0.000 description 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 1
- 229940112669 cuprous oxide Drugs 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000011416 infrared curing Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000003847 radiation curing Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910021484 silicon-nickel alloy Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
Abstract
The invention provides a solar cell production method and a solar cell, and relates to the technical field of photovoltaics. The solar cell production method comprises the following steps: providing a silicon substrate; an aluminum layer is arranged on a silicon substrate; printing a metal paste on the aluminum layer, the metal paste comprising a copper-containing compound; sintering the metal slurry to form a copper-containing protective layer, and forming copper-aluminum oxide at the interface of the copper-containing protective layer and the aluminum layer; and electroplating the electrode part on the copper-containing protective layer. In the process of sintering to form the copper-containing protective layer, the copper-containing compound in the copper-containing protective layer and the aluminum-containing compound in the aluminum layer are subjected to chemical reaction, the free energy of the copper-containing protective layer/glass and the aluminum layer/glass interface is reduced by the copper-containing compound, the wettability and the mechanical bonding strength of the glass to the copper-containing protective layer and the aluminum layer are enhanced, and copper-aluminum oxide is generated at the interface of the copper-containing protective layer and the aluminum layer, so that the aluminum layer and the copper-containing protective layer have high bonding strength, the bonding force between an electrode and a silicon substrate is ensured, and the power generation efficiency and the reliability of the solar cell are improved.
Description
Technical Field
The invention relates to the technical field of solar photovoltaics, in particular to a solar cell production method and a solar cell.
Background
Currently, the manner of producing electrodes for silicon-based solar cells is mainly the following: screen printing and plating. Since screen printing has problems of limited accuracy, large series resistance of the formed electrodes, high cost, and the like, plating methods are increasingly widely used.
However, the inventors found that, in a method of producing an electrode by studying the existing plating method, there are the following disadvantages: the bonding force between the electrode formed by the existing plating mode and the silicon substrate is poor, so that the power generation efficiency and the reliability of the solar cell are seriously affected.
Disclosure of Invention
The invention provides a solar cell production method and a solar cell, and aims to solve the problem that an electrode formed by an existing plating mode has poor bonding force with a silicon substrate.
According to a first aspect of the present invention, there is provided a solar cell production method comprising the steps of:
providing a silicon substrate;
providing an aluminum layer on the silicon substrate;
printing a metal paste on the aluminum layer, wherein the metal paste comprises a first inorganic binder, and the first inorganic binder is a copper-containing compound;
sintering the metal slurry to form a copper-containing protective layer, wherein a copper-aluminum oxide is formed at the interface of the copper-containing protective layer and the aluminum layer; and electroplating an electrode part on the copper-containing protective layer.
In the embodiment of the invention, before the electrode part is electroplated, a metal paste is printed on the aluminum layer, wherein the metal paste comprises a first inorganic adhesive, the first inorganic adhesive is a copper-containing compound, in the process of sintering the metal paste to form a copper-containing protective layer, the copper-containing compound in the copper-containing protective layer and the aluminum-containing compound in the aluminum layer are subjected to chemical reaction, in the chemical reaction, the copper-containing compound can reduce the free energy of the interface of the copper-containing protective layer/glass and the aluminum layer/glass, the wettability and the mechanical bonding strength of the glass to the copper-containing protective layer and the aluminum layer are enhanced, meanwhile, copper-aluminum oxide is generated at the interface of the copper-containing protective layer and the aluminum layer in the chemical reaction, and Cu/Cu is further formed at the interface of the copper-containing protective layer and the aluminum layer n O/(Cu x Al y )O z According to the structure, the aluminum layer and the copper-containing protective layer have high bonding strength, namely the copper-containing protective layer is attached to the aluminum layer at high strength, so that electrochemical corrosion of the aluminum layer in the process of electroplating the electrode part is avoided, the original performance of the aluminum layer is protected to the greatest extent, the bonding force of the aluminum layer and the silicon substrate is guaranteed, the bonding force of the electrode and the silicon substrate is further guaranteed, and the power generation efficiency and reliability of the solar cell are improved. In addition, before the electrode part is electroplated, a copper-containing protective layer is formed on the aluminum layer, the copper-containing protective layer can prevent the electrode part from penetrating into the aluminum layer to a great extent, auxiliary materials and the like in the process of electroplating the electrode part from penetrating into the aluminum layer to a great extent, so that the aluminum layer can keep the original performance to the greatest extent, the influence on the bonding capability of the aluminum layer and the silicon substrate due to the penetration of the electrode part, the auxiliary materials and the like in the process of electroplating the electrode part into the aluminum layer is avoided to a greater extent, the bonding force of the aluminum layer and the silicon substrate is ensured, and the bonding force of the aluminum layer and the silicon substrate is further ensuredThe bonding force between the electrode and the silicon substrate is blocked, and the power generation efficiency and reliability of the solar cell are improved. And the copper-containing protective layer has excellent conductivity and larger surface area, so that the electrical connection with the electrode part can be improved, and meanwhile, the conductivity between the electrode and the silicon substrate is improved, so that the power generation efficiency and the reliability of the solar cell are further improved. Meanwhile, the electrode part is formed in an electroplating mode, so that the consumption of metal materials can be reduced, particularly, the use of silver materials is greatly reduced, the production cost can be reduced, the manufacturing precision is high, the operation is relatively simple, and the large-scale industrial application is convenient.
According to a second aspect of the present invention, there is provided a solar cell manufactured by any of the aforementioned solar cell manufacturing methods.
The solar cell has the same or similar beneficial effects as the solar cell production method, and in order to avoid repetition, the description is omitted here.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the description of the embodiments of the present invention will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 shows a flow chart of steps of a method of producing a solar cell in an embodiment of the invention;
fig. 2 shows a schematic structural view of a solar cell in an embodiment of the present invention;
fig. 3 shows a schematic structural view of another solar cell in an embodiment of the present invention;
fig. 4 shows a schematic structural diagram of a further solar cell in an embodiment of the invention;
fig. 5 shows a schematic structural view of a solar cell electrode in an embodiment of the present invention;
fig. 6 shows a schematic structural view of another solar cell electrode in an embodiment of the present invention;
fig. 7 shows a schematic structural view of still another solar cell in an embodiment of the present invention;
fig. 8 shows a schematic structural view of a further solar cell in an embodiment of the invention.
Description of the drawings:
1-silicon substrate, 2-passivation film, 3-aluminum layer, 4-copper-containing protective layer, 5-electrode part, 51-first metal electrode layer, 52-second metal electrode layer, 53-third metal electrode layer, 6-main gate electrode, 7-fine gate electrode, 8-passivation antireflection layer, 9-tunneling layer, 10-doped polysilicon layer, 11-silicon substrate, 12-emitter, 13-front electrode, 14-back electrode, 15-p-type polysilicon, 16-n-type polysilicon, 17-n-type electrode, 18-p-type electrode.
Detailed Description
The inventors found that the main reason why the bonding force between the electrode formed by the conventional plating method and the silicon substrate is poor is that: on the one hand: the seed layer on the silicon substrate can be subjected to electrochemical corrosion in the process of arranging the electrode part, and the seed layer can cause the damage of the seed layer structure after being subjected to the electrochemical corrosion, so that the tensile force between the seed layer and the silicon substrate is reduced, the bonding capability of the seed layer and the silicon substrate is reduced, and the bonding capability of the seed layer and the silicon substrate is deteriorated. On the other hand: the seed layer on the silicon substrate is not dense enough so that other layers plated on the seed layer penetrate the seed layer and auxiliary materials plated on other layers penetrate the seed layer, however, the materials penetrating the seed layer react with the seed layer to generate new substances which can cause degradation of the vitreous structure in the seed layer, thereby reducing the bonding capability of the seed layer and the silicon substrate, and the bonding capability of the seed layer and the silicon substrate is deteriorated. In the present application, a metal paste is printed on the aluminum layer before the electrode portion is plated, the metal paste includes a first inorganic binder, the first inorganic binder is a copper-containing compound, the copper-containing compound in the copper-containing protective layer and the aluminum-containing compound in the aluminum layer react chemically in the process of sintering the metal paste to form the copper-containing protective layer, and the copper-containing compound can be reduced in the chemical reactionThe free energy of the interface between the copper-containing protective layer/glass and the aluminum layer/glass is low, so that the wettability and the mechanical bonding strength of the glass to the copper-containing protective layer and the aluminum layer are enhanced, meanwhile, copper aluminum oxide is generated at the interface between the copper-containing protective layer and the aluminum layer in the chemical reaction, and Cu/Cu is further formed at the interface between the copper-containing protective layer and the aluminum layer n O/(Cu x Al y )O z According to the structure, the aluminum layer and the copper-containing protective layer have high bonding strength, namely the copper-containing protective layer is attached to the aluminum layer at high strength, so that electrochemical corrosion of the aluminum layer in the process of electroplating the electrode part is avoided, the original performance of the aluminum layer is protected to the greatest extent, the bonding force of the aluminum layer and the silicon substrate is guaranteed, the bonding force of the electrode and the silicon substrate is further guaranteed, and the power generation efficiency and reliability of the solar cell are improved. Moreover, before the electrode part is electroplated, a copper-containing protective layer is formed on the aluminum layer, the electrode part can be prevented from being infiltrated into the aluminum layer to a great extent by the copper-containing protective layer, auxiliary materials and the like in the process of electroplating the electrode part can be prevented from being infiltrated into the aluminum layer to a great extent, the original performance of the aluminum layer can be kept to the greatest extent, the influence on the bonding capacity of the aluminum layer and the silicon substrate due to the infiltration of the electrode part, the auxiliary materials and the like in the process of electroplating the electrode part into the aluminum layer is prevented to a great extent, the bonding force of the aluminum layer and the silicon substrate is guaranteed, the bonding force of the electrode and the silicon substrate is further guaranteed, and the power generation efficiency and the reliability of the solar cell are improved. And the copper-containing protective layer has excellent conductivity and larger surface area, so that the electrical connection with the electrode part can be improved, and meanwhile, the conductivity between the electrode and the silicon substrate is improved, so that the power generation efficiency and the reliability of the solar cell are further improved. Meanwhile, the electrode part is formed in an electroplating mode, so that the consumption of metal materials can be reduced, particularly, the use of silver materials is greatly reduced, the production cost can be reduced, the manufacturing precision is high, the operation is relatively simple, and the large-scale industrial application is convenient.
Fig. 1 shows a flow chart of steps of a solar cell production method in an embodiment of the present invention. Referring to fig. 1, the method comprises the steps of:
step S1, providing a silicon substrate.
The silicon substrate may be composed of a silicon base and a conductive region. The silicon substrate is mainly composed of monocrystalline silicon and polycrystalline silicon, and specific materials of the silicon substrate are not limited. The conductive region and the silicon substrate cooperate primarily for separating and transporting carriers in the solar cell.
The conductive region may be located in the silicon substrate, and in particular, the conductive region may be doped from the silicon substrate. For example, the silicon substrate may be a monocrystalline silicon wafer or a polycrystalline silicon wafer having a conductivity type, the conductivity type dopant being an n-type or P-type dopant, i.e., the conductivity type dopant may be an n-type impurity such As a group V element including phosphorus (P), arsenic (As), bismuth (Bi), antimony (Sb), or the like. Alternatively, the dopant of the conductivity type may be a p-type impurity such as a group III element including boron (B), aluminum (Al), gallium (Ga), indium (In), or the like. A conductive region of a second conductivity type having a relatively high doping concentration may be formed in one side surface of the silicon substrate, and a conductive region of a first conductivity type having a higher doping concentration than the silicon substrate may be formed on the other side surface of the silicon substrate, and the conductive region of the first conductivity type may be formed of doped polysilicon or amorphous silicon.
Alternatively, the conductive region may be formed by a thermal process. Alternatively, the conductive region is deposited on one side of the silicon substrate. For example, the conductive region is formed by Chemical Vapor Deposition (CVD), low Pressure Chemical Vapor Deposition (LPCVD), atmospheric Pressure Chemical Vapor Deposition (APCVD), plasma Enhanced Chemical Vapor Deposition (PECVD), thermal growth, sputtering, and the like.
A textured or textured structure may be formed on the surface of the silicon substrate for increasing the solar radiation collection effect. The textured surface or textured structure is a surface having a regular or irregular shape for scattering incident light, reducing the amount of light reflected back from the solar cell surface. A passivation film may also be formed on the textured surface or textured structure to further improve the light absorption properties of the solar cell. Different passivation film stacks may be formed on the side of the silicon substrate that receives the illumination and on the side of the backlight, respectively, and the passivation film may include one or more layers of dielectric material. For example, a silicon oxide passivation film+a silicon nitride passivation film is used on the side of the silicon substrate receiving the light, and an aluminum oxide passivation film+a silicon nitride passivation film is used on the side of the silicon substrate backlight, wherein the thickness of the aluminum oxide passivation film may be 6nm and the thickness of the silicon nitride passivation film may be 70nm. The passivation film has a plurality of contact holes formed thereon, and may be formed by wet etching, ablation technique, or the like. The contact hole does not penetrate through the thickness of the passivation film, or the contact hole may penetrate through the passivation film to directly contact the conductive region. In the case that the contact hole is directly contacted with the conductive region through the passivation film, care needs to be taken to consider selection of laser process parameters, so that damage of laser to the silicon substrate is reduced as much as possible.
For the case where the conductive region of the second conductivity type is formed in the one side surface of the silicon substrate and the conductive region of the first conductivity type is formed on the other side surface of the silicon substrate, the first passivation film and the second passivation film provided with the openings are formed on the conductive region of the second conductivity type and the conductive region of the first conductivity type, respectively, and the second electrode and the first electrode are in contact with the conductive region of the second conductivity type and the conductive region of the first conductivity type through the openings, respectively. Alternatively, a plurality of doped polysilicon regions of a first conductivity type are formed on the back surface of the silicon substrate and a plurality of conductive regions of a second conductivity type are formed in the back surface, a passivation film provided with a plurality of openings is formed on the conductive regions of the second conductivity type and the conductive regions of the first conductivity type, and the first electrode and the second electrode are respectively in contact with the conductive regions of the first conductivity type and the conductive regions of the second conductivity type through the openings. The first electrode and the second electrode are opposite in polarity.
And S2, setting an aluminum layer on the silicon substrate.
An aluminum layer may be disposed on the polysilicon conductive region on the silicon substrate. Alternatively, an aluminum layer may be formed on the dielectric layer containing silicon nitride. The manner of providing the aluminum layer on the silicon substrate is not particularly limited. For example, a paste including aluminum particles may be deposited on a silicon substrate, and then the paste is cured, thereby forming an aluminum layer on the silicon substrate.
Alternatively, an aluminum-containing paste may be printed on the silicon substrate using printing techniques (including screen printing, spin coating, ink jet printing, etc.), and then the aluminum-containing paste may be sintered or cured to form an aluminum layer in electrical contact with the silicon substrate. The curing may be volatile or the like, and may be specifically formed into a solid at a relatively low temperature. The curing process may be selected from the group consisting of thermal curing, ultraviolet curing, infrared curing, and any other energy process of radiation curing. The aluminum layer in electrical contact with the silicon substrate as a whole enables separation, transport and collection of carriers. In the case where a passivation film is provided on the silicon substrate, an aluminum-containing paste is printed in the opening region of the passivation film. The printed pattern may be continuous stripes or discontinuous dots, and the dot size may be 2mm×2mm, 2mm×1mm, 1mm×0.8mm, 1mm×1mm.
Alternatively, the aluminum-containing paste may include aluminum particles, a first liquid binder, and a second inorganic binder. The average particle diameter (D50) of the aluminum particles is preferably 2um or less, and the aluminum particles of the average particle diameter can provide the aluminum layer with excellent electrical conductivity. The first liquid binder is an organic vehicle and includes a first organic binder and a first solvent. The first organic binder may include at least one of a cellulose-based polymer, a (meth) acrylate-based polymer, and a rosin-based resin. For example, the first organic binder may be ethylcellulose or cellulose acetate butyrate. The first solvent may be at least one of alcohols (e.g., terpineol, butyl carbinol), esters (e.g., esters containing hydroxyl groups, butyl carbinol acetate, alcohol ester twelve). For example, the first solvent may use a combination of terpineol and butyl carbitol acetate. The second inorganic binder may be an oxide of a frit. For example, the second inorganic binder may be a metal oxide-based material, and is usually in the form of glass particles. The oxide constituting the frit is not particularly limited. For example, the second inorganic binder may contain lead oxide (PbO), vanadium oxide (V 2 O 5 ) Bismuth oxide (Bi) 2 O 3 ) Zinc oxide (ZnO), boron oxide (B) 2 O 3 ) Silicon oxide (SiO) 2 ) Alumina (Al) 2 O 3 ) Tellurium oxide (TeO) 2 ) At least one of them. The second inorganic binder preferably contains V 2 O 5 And/or ZnO, more preferably V 2 O 5 . The second inorganic adhesive can react with silicon in the silicon substrate, so that the bonding force between the aluminum layer and the silicon substrate can be improved to a great extent, the bonding force between the electrode and the silicon substrate is further ensured, and the power generation efficiency and the reliability of the solar cell are improved.
Optionally, the glass transition temperature of the second inorganic binder is less than or equal to 450 ℃, so that the aluminum-containing slurry has excellent softening performance and is easy to soften.
And step S3, printing metal slurry on the aluminum layer, wherein the metal slurry comprises a first inorganic binder, and the first inorganic binder is a copper-containing compound.
The metal paste includes not only copper element but also any material, and is not particularly limited. A metal paste may be printed (including screen printing, spin coating, and ink jet printing) on the aluminum layer, the metal paste comprising a first inorganic binder that is a copper-containing compound.
Alternatively, the copper-containing compound may be at least one of a copper complex, a copper organic acid salt, and a copper oxide. For example, the copper-containing compound may be at least one of copper acetylacetonate, copper neodecanoate, copper oxide, copper bis (8-hydroxyquinoline), copper bis (triphenylphosphine) borohydride, and copper triflate. The copper-containing compounds of the above composition are prone to react with aluminum-containing compounds during sintering to produce copper aluminum oxides.
Alternatively, the mass ratio of the copper-containing compound in the metal paste is 0.1% to 5% so that the copper-containing protective layer is formed to have excellent conductive properties and good bonding strength.
Optionally, the metal paste may further include: and a second liquid binder including a second organic binder and a second solvent. The second liquid binder is an organic vehicle and contains a second organic binder and a second solvent. The second organic binder may be at least one of a cellulose-based polymer, a (meth) acrylate-based polymer, and a rosin-based resin. For example, the second organic binder may be a combination of ethylcellulose and polymethyl acrylate. The second solvent may be at least one of alcohols (e.g., terpineol, butyl carbinol), esters (e.g., esters containing hydroxyl groups, butyl carbinol acetate, alcohol ester twelve).
Optionally, the metal paste may further include a third inorganic binder; the third inorganic binder is an oxide of a frit. The third inorganic binder can be used as a catalyst, and in the sintering process, the aluminum-containing compound in the aluminum layer and the copper-containing compound in the copper-containing protective layer are accelerated and catalyzed to react, so that copper-aluminum oxide is easier to form. More specifically, the third inorganic binder may transport the copper-containing compound in the copper-containing protective layer to the aluminum layer to assist in forming the bond, effectively increasing the reaction kinetics. It should be noted that some copper-containing compounds may also be used as fluxing agents instead of the third inorganic binder.
Alternatively, the third inorganic binder may be a material of which the metal oxide is the main material, typically in the form of glassy particles. The oxide constituting the frit is not particularly limited. For example, the third inorganic binder may contain lead oxide (PbO), zinc oxide (ZnO), boron oxide (B) 2 O 3 ) Silicon oxide (SiO) 2 ) Alumina (Al) 2 O 3 ) Tellurium oxide (TeO) 2 ) At least one of them. The third inorganic binder preferably contains PbO and/or ZnO, more preferably PbO.
Optionally, the glass transition temperature of the third inorganic binder is less than or equal to 500 ℃, so that the metal slurry has excellent softening performance and is easy to soften.
Optionally, the metal in the metal paste may be noble metal, and the copper-containing protective layer of the material has good conductivity, so that the electrical connection with the electrode part can be further improved, and meanwhile, the conductivity between the electrode and the silicon substrate is improved, so that the power generation efficiency and the reliability of the solar cell are further improved. The noble metal may be at least one of silver (Ag), ruthenium (Ru), rhodium (Rh), palladium (Pd), and iridium (Ir).
And S4, sintering the metal slurry to form a copper-containing protective layer, and forming copper-aluminum oxide at the interface of the copper-containing protective layer and the aluminum layer.
Sintering the metal paste to form a copper-containing protective layer. In the process of sintering and forming the copper-containing protective layer on the aluminum layer, a chemical reaction is carried out between a copper-containing compound in the copper-containing protective layer and an aluminum-containing compound in the aluminum layer, in the chemical reaction, the free energy of the interface between the copper-containing protective layer/glass and the aluminum layer/glass can be reduced by the copper-containing compound, the wettability and the mechanical bonding strength of the glass to the copper-containing protective layer and the aluminum layer are enhanced, meanwhile, copper-aluminum oxide is generated at the interface between the copper-containing protective layer and the aluminum layer in the chemical reaction, and Cu/Cu is further formed at the interface between the copper-containing protective layer and the aluminum layer n O/(Cu x Al y )O z According to the structure, the aluminum layer and the copper-containing protective layer have high bonding strength, namely the copper-containing protective layer is attached to the aluminum layer at high strength, so that electrochemical corrosion of the aluminum layer in the process of electroplating the electrode part is avoided, the original performance of the aluminum layer is protected to the greatest extent, the bonding force of the aluminum layer and the silicon substrate is guaranteed, the bonding force of the electrode and the silicon substrate is further guaranteed, and the power generation efficiency and reliability of the solar cell are improved. Moreover, the copper-containing protective layer has excellent conductivity and larger surface area, so that the electrical connection with the electrode part can be improved, and meanwhile, the conductivity between the electrode and the silicon substrate is improved, so that the power generation efficiency and the reliability of the solar cell are further improved. Moreover, before the electrode part is electroplated, a copper-containing protective layer is formed on the aluminum layer, the electrode part can be prevented from being infiltrated into the aluminum layer to a great extent by the copper-containing protective layer, auxiliary materials and the like in the process of electroplating the electrode part can be prevented from being infiltrated into the aluminum layer to a great extent, the original performance of the aluminum layer can be kept to the greatest extent, the influence on the bonding capacity of the aluminum layer and the silicon substrate due to the infiltration of the electrode part, the auxiliary materials and the like in the process of electroplating the electrode part into the aluminum layer is prevented to a great extent, the bonding force of the aluminum layer and the silicon substrate is guaranteed, the bonding force of the electrode and the silicon substrate is further guaranteed, and the power generation efficiency and the reliability of the solar cell are improved. The material of (Cu) x Al y )O z X, y, z, and Cu in (c) n N in O is determined according to practical situations, which is not particularly limited in the embodiments of the present application.
The copper-containing compound is present in the copper-containing protective layer in a mass proportion of 0.1% to 1%. The copper-containing compound can sufficiently reduce the free energy of the interface between the copper-containing protective layer/glass and the aluminum layer/glass, enhance the wettability and mechanical bonding strength of the glass to the copper-containing protective layer and the aluminum layer, and simultaneously facilitate the generation of copper-aluminum oxide in chemical reaction so as to form Cu/Cu between the aluminum layer and the copper-containing protective layer n O/(Cu x Al y )O z Structure is as follows.
Optionally, the copper aluminum oxide has a spinel structure, and the spinel structure enables higher bonding strength between the aluminum layer and the copper-containing protective layer, namely, the copper-containing protective layer is attached to the aluminum layer in a high strength manner, so that electrochemical corrosion of the aluminum layer in the process of electroplating the electrode part is avoided, the original performance of the aluminum layer is protected to the greatest extent, the bonding force between the aluminum layer and the silicon substrate is guaranteed, the bonding force between the electrode and the silicon substrate is further guaranteed, and the power generation efficiency and reliability of the solar cell are improved.
If the metal in the metal paste is silver, the metal paste contains silver particles, and the shape of the silver particles is not particularly limited, and for example, the silver particles may be spherical or flake-shaped. The silver particles having the above-described shape are preferably spherical, and can provide a copper-containing protective layer having a more excellent conductive effect and a higher electrode strength. The average particle diameter (D50) of the silver particles is preferably 2um or less.
Optionally, the aluminum layer comprises an aluminum-containing compound including an oxide of aluminum, the aluminum layer of the above material being susceptible to chemical reaction with the copper-containing compound of the copper-containing protective layer during sintering to form copper-aluminum oxide and thereby form Cu/Cu between the aluminum layer and the copper-containing protective layer n O/(Cu x Al y )O z Structure is as follows.
For example, if the aluminum layer comprises aluminum oxide (Al 2 O 3 ) If the metal paste contains silver, the copper-containing protective layer is a copper-containing silver protective layer, and if the copper-containing silver protective layer contains cuprous oxide (Cu) 2 O) during sintering, the following reactions occur: cu (Cu) 2 O+Al 2 O 3 →(CuAl)O，Cu 2 O is decomposed into Cu to form(CuAl) O is spinel structure, thus forming Cu/Cu between the copper protective layer and the aluminum layer 2 The O/(CuAl) O structure ensures that the copper protective layer and the aluminum layer have high bonding strength, and solves the difficult problem that the silver protective layer and the aluminum layer cannot be bonded or are not easy to bond.
Alternatively, during sintering of the metal paste on the aluminum layer to form the copper-containing protective layer, the sintering temperature is 700-1000 ℃, at which the aluminum-containing compound and the copper-containing compound in the aluminum layer are more prone to react and form copper-aluminum oxide.
Fig. 2 shows a schematic structure of a solar cell in an embodiment of the present invention. Referring to fig. 2, an aluminum layer 3 is provided on a silicon substrate 1, and a copper-containing protective layer 4 is located between the aluminum layer 3 and an electrode portion 5. Referring to fig. 2, a copper-containing protective layer 4 is located between the aluminum layer 3 and the electrode portion 5. The copper-containing protective layer covers the surface of the aluminum layer 3 remote from the silicon substrate 1. The electrode section 5 includes at least two metal electrode layers. As shown in fig. 2, the electrode portion 5 includes 3 metal electrode layers, namely, a first metal electrode layer 51, a second metal electrode layer 52, and a third metal electrode layer 53. Wherein the first metal electrode layer 51 is closest to the first metal electrode layer 51 of the copper-containing protective layer 4.
Fig. 3 shows a schematic structural view of another solar cell in an embodiment of the present invention. Optionally, referring to fig. 3, the copper-containing protective layer 4 covers all surfaces of the aluminum layer 3 opposite to the electrode portion 5 to isolate the aluminum layer 3 from the electrode portion 5, and compared with fig. 2, the copper-containing protective layer 4 in fig. 3 covers the aluminum layer 3 more comprehensively to isolate the aluminum layer 3 from the electrode portion 5 completely, so that the electrode portion 5 is prevented from penetrating into the aluminum layer 3 more thoroughly, and auxiliary materials and the like in the process of electroplating the electrode portion 5 are prevented from penetrating into the aluminum layer 3 more thoroughly, so that the barrier effect is better.
It should be noted that, in the process of setting the aluminum layer, after the aluminum-containing slurry is deposited, the aluminum-containing slurry may not be sintered, but only solidified at a low temperature until the aluminum-containing slurry is sintered in the process of forming the copper-containing protective layer by sintering the metal slurry, so that the process is simple and the cost can be reduced.
And S5, electroplating an electrode part on the copper-containing protective layer.
Referring to fig. 2, an electrode portion 5 is plated on the copper-containing protective layer 4. The electrode part 5 may include at least two metal electrode layers. The metal electrode layers of the electrode portion 5 are made of different metal materials. The plating may specifically be electrolytic plating. The electrode part is formed in an electroplating mode, so that the consumption of metal materials can be reduced, particularly, the use of silver materials is greatly reduced, the production cost can be reduced, the manufacturing precision is high, the operation is relatively simple, and the large-scale industrial application is convenient.
Specifically, each metal electrode layer is electroplated on the copper-containing protective layer in sequence. Alternatively, referring to fig. 2, the electrode part includes a first metal electrode layer 51, a second metal electrode layer 52, and a third metal electrode layer 53 laminated in this order, wherein the first metal electrode layer 51 is adjacent to the copper-containing protective layer 4. As shown in fig. 2, a first metal electrode layer 51 is first electroplated on the copper-containing protective layer 4, then a second metal electrode layer 52 is electroplated on the first metal electrode layer 51, and then a third metal electrode layer 53 is electroplated on the second metal electrode layer 52.
Optionally, the first metal electrode layer 51 includes a first metal, where the first metal included in the first metal electrode layer 51 may be at least one of nickel, cobalt, titanium, and tungsten, and the first metal may form a low-resistance metal silicide material with the silicon substrate 1, so as to reduce the contact resistance between the silicon substrate 1 and the surface electrode, and improve the battery efficiency.
Optionally, after the first metal electrode layer 51 is formed by electroplating, the method may further include: sintering the silicon substrate 1 plated with the first metal electrode layer 51 in a nitrogen atmosphere and/or an inert gas atmosphere; the sintering temperature is 300-500 ℃ and the sintering time is 0.5-2 minutes, so that the first metal-silicon alloy can be formed, and the first metal-silicon alloy generally has lower resistance, can reduce loss and improve conductivity between the electrode and the silicon substrate. For example, if the first metal electrode layer 51 is a nickel layer, the silicon substrate 1 on which the first metal electrode layer 51 is plated is sintered in a nitrogen atmosphere at a temperature of 350 ℃ for 1 minute at the aluminum layer, so that a low-resistance nickel-silicon alloy can be formed.
The first metal electrode layer 51 described above may be formed in all the openings of the main gate formation region including the aluminum layer 3 and in the openings of the fine gate formation region, that is, the first metal electrode layer 51 is in contact with the copper-containing protective layer 4 in the region where the aluminum layer 3 is provided and in contact with the silicon substrate 1 in the region where the opening (fine gate formation region) is not provided.
In the case where the electrode portion 5 includes 3 metal electrode layers, the second metal electrode layer 52 which is provided on the first metal electrode layer 51 and has a metal different from the first metal as a main component can function to improve electrical characteristics because it has a lower resistance. For example, the second metal electrode layer 52 has a lower resistance than the first metal electrode layer 51. Alternatively, the second metal electrode layer 52 may include at least one of aluminum, silver, gold, nickel, tungsten, titanium, cobalt.
The third metal electrode layer 53 provided on the second metal electrode layer 52 is a portion connected to another solar cell or a wiring material for external connection, and may include a material having a characteristic of making an excellent connection with the wiring material. The third metal included in the third metal electrode layer 53 may include at least one of silver, tin, nickel, and vanadium. The wiring material may be a solder strip.
Alternatively, referring to fig. 2, the aluminum layer 3, the copper-containing protective layer 4, and the electrode portion 5 form an electrode of the solar cell, and the thickness h1 of the electrode is 5-50um. The thickness h1 of the electrode is the dimension of the electrode in the lamination direction of the silicon substrate 1 and the electrode. The electrode with the thickness has good conductive effect.
In the embodiment of the invention, the aluminum layer 3, the copper-containing protective layer 4 and the electrode part 5 form the electrode of the solar cell. The electrode may be a positive electrode or a negative electrode, and the electrode may be a front electrode located on the light-facing side of the silicon substrate, or may be a back electrode located on the backlight side of the silicon substrate, which is not limited in the embodiment of the present invention. For example, the aluminum layer 3, the copper-containing protective layer 4, and the electrode portion 5 form a main gate electrode of the solar cell. Fig. 4 shows a schematic structural diagram of a further solar cell in an embodiment of the invention. The thin gate electrode of the solar cell may be composed of only the electrode portion 5. Alternatively, the main gate electrode and the thin gate electrode may be located on both sides of the silicon substrate, respectively. Fig. 5 shows a schematic structural view of a solar cell electrode in an embodiment of the present invention. Fig. 6 shows a schematic structural view of another solar cell electrode in an embodiment of the present invention. The main gate electrode 6 is a continuous elongated shape in fig. 5. In fig. 6, the main gate electrode 6 is discontinuously arranged in a dot shape. In fig. 5 and 6, 7 are thin gate electrodes.
Before the electrode portion is plated, at least one contact point may be provided on the silicon substrate, the contact point being formed by printing a silver-or aluminum-containing metal paste and annealing. The contact is used for connecting with a negative electrode of a plating power supply during plating so as to form each metal electrode layer of the plated electrode part in a contact forming area on the surface of the silicon substrate.
Alternatively, the above-mentioned electrical connection points may be symmetrically disposed on the silicon substrate, may be disposed entirely within the main gate region to be formed, or may be formed as a plurality of discrete points within the main gate region, and the electrical connection points within different main gate regions may be formed at one time by printing, so that the process is simple and no additional power supply point is required. During electroplating, the metal electrode layer covers the plurality of dot patterns to form a shape with a thin middle and a thick edge.
Alternatively, the contact point may be formed not in the main gate region but on the deposited passivation film and located near an edge portion of the silicon substrate surface or each corner portion of the silicon substrate. Such a contact point may be formed by printing and sintering a burn-through type metal electrode paste, for example, a conventional sintered type Ag paste or Al paste. The distance between each contact point and the center of the silicon substrate is basically equal, so that the electroplating speed of the contact area is basically consistent during electroplating. Although the additional arrangement of the power supply points brings about a certain increase in process and cost, the overall cost is less affected by the fact that the power supply points are locally arranged in a smaller number. From the viewpoint of increasing the reliability of the battery assembly, since the contact formation regions are all deposited from the plated metal electrode layers, the heights are substantially uniform throughout, and stable and reliable connection can be obtained when the interconnect materials are connected.
Fig. 7 shows a schematic structural view of still another solar cell in an embodiment of the present invention. Fig. 8 shows a schematic structural view of a further solar cell in an embodiment of the invention. Alternatively, referring to fig. 7 and 8, the solar cell may further include a passivation anti-reflection layer 8, and the silicon substrate 1 in fig. 7 may be composed of a silicon substrate 11 and an emitter 12 diffused on the silicon substrate 11, the emitter 12 being present as a conductive region. The solar cell may further comprise a passivation anti-reflection layer 8, a tunneling layer 9, a doped polysilicon layer 10. Fig. 7 shows a double-sided battery, in which a front electrode 13 and a rear electrode 14 are respectively located on both sides of a silicon substrate 11. Fig. 8 shows a back junction cell, in fig. 8, a silicon substrate 1 is composed of a silicon substrate 11 and p-type polysilicon 15 and n-type polysilicon 16 deposited on the silicon substrate 11, the p-type polysilicon 15 and the n-type polysilicon 16 exist as conductive regions, an n-type electrode 17 is in electrical contact with the n-type polysilicon 16, and a p-type electrode 18 is in electrical contact with the p-type polysilicon 15. In fig. 2, 3, 4, 7 and 8, 2 is a passivation film.
In an embodiment of the invention, a solar cell is further provided, and the solar cell is prepared by any one of the solar cell production methods. The solar cell comprises a silicon substrate 1, an aluminum layer 3, a copper-containing protective layer 4 and an electrode part 5, wherein the aluminum layer 3 is positioned on the silicon substrate 1, the aluminum layer 3 contains an aluminum-containing compound, the copper-containing protective layer 4 is positioned on the aluminum layer 3, the copper-containing protective layer 4 is provided with the copper-containing compound, and the electrode part 5 is positioned on the copper-containing protective layer 4. Specifically, the solar cell may refer to the descriptions related to the foregoing method embodiments, and fig. 2 to 8. The solar cell has the same or similar advantages as the solar cell production method, and in order to avoid repetition, the description is omitted here.
It should be noted that, for simplicity of description, the method embodiments are shown as a series of acts, but it should be understood by those skilled in the art that the embodiments are not limited by the order of acts described, as some steps may occur in other orders or concurrently in accordance with the embodiments. Further, those skilled in the art will appreciate that the embodiments described in the specification are presently preferred, and that the acts referred to are not necessarily all required for the embodiments of the present application.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many forms may be made by those having ordinary skill in the art without departing from the spirit of the present invention and the scope of the claims, which are to be protected by the present invention.
Claims (14)
1. A method of producing a solar cell, comprising the steps of:
providing a silicon substrate;
providing an aluminum layer on the silicon substrate;
printing a metal paste on the aluminum layer, wherein the metal paste comprises a first inorganic binder, and the first inorganic binder is a copper-containing compound;
sintering the metal slurry to form a copper-containing protective layer, wherein a copper-aluminum oxide is formed at the interface of the copper-containing protective layer and the aluminum layer;
and electroplating an electrode part on the copper-containing protective layer.
2. The method of claim 1, wherein the step of disposing an aluminum layer on the silicon substrate comprises:
printing an aluminum-containing slurry on the silicon substrate, and sintering or solidifying the aluminum-containing slurry.
3. The method of claim 2, wherein the aluminum-containing paste comprises aluminum particles, a first liquid binder, and a second inorganic binder; the average particle diameter of the aluminum particles is less than or equal to 2um; the first liquid binder includes a first organic binder and a first solvent; the second inorganic binder is an oxide of a frit.
4. The method according to claim 3, wherein the first organic binder is at least one of a cellulose polymer, an acrylic polymer, and a rosin resin;
the first solvent is at least one of alcohols and esters;
the second inorganic binder has a glass transition temperature of 450 ℃ or less.
5. The method of claim 1, wherein the metal paste further comprises a second liquid binder, a third inorganic binder; the third inorganic binder is an oxide of a frit; the second liquid binder includes a second organic binder and a second solvent; the second organic binder is at least one of cellulose polymer, acrylic ester polymer and rosin resin; the second solvent is at least one of alcohols and esters;
the third inorganic binder has a glass transition temperature of 500 ℃ or less.
6. The method of producing a solar cell according to any one of claims 1 to 5, wherein the electrode portion includes a first metal electrode layer adjacent to the copper-containing protective layer, the method further comprising, after the first metal electrode layer is formed by electroplating:
sintering the silicon substrate electroplated with the first metal electrode layer in a nitrogen environment and/or an inert gas environment; the sintering temperature is 300-500 ℃ and the sintering time is 0.5-2 minutes.
7. The method for producing a solar cell according to any one of claims 1 to 5, wherein the copper-containing compound is at least one of a copper complex, a copper organic acid salt, and a copper oxide;
the mass proportion of the copper-containing compound in the metal slurry is 0.1% -1%.
8. The method of claim 7, wherein the copper aluminum oxide has a spinel structure.
9. The method of any one of claims 1 to 5, wherein the metal in the metal paste is a noble metal.
10. The method of any one of claims 1 to 5, wherein the sintering is performed at a temperature of 700 to 1000 ℃ during sintering of the metal paste to form the copper-containing protective layer.
11. The method according to any one of claims 1 to 5, wherein the electrode portion includes a first metal electrode layer, a second metal electrode layer, and a third metal electrode layer which are stacked in this order, wherein the first metal electrode layer is adjacent to the copper-containing protective layer, and the first metal electrode layer includes at least one of nickel, tungsten, titanium, and cobalt; the second metal electrode layer comprises at least one of aluminum, silver, gold, nickel, tungsten, titanium and cobalt; the third metal electrode layer contains at least one of silver, tin, nickel and vanadium.
12. The method according to any one of claims 1 to 5, wherein the aluminum layer, the copper-containing protective layer, and the electrode portion form an electrode of the solar cell, the thickness of the electrode being 5 to 50um; the thickness of the electrode is the dimension of the electrode in the stacking direction of the silicon substrate and the electrode.
13. The method of producing a solar cell according to any one of claims 1 to 5, wherein the copper-containing protective layer covers all surfaces of the aluminum layer opposite to the electrode portion to isolate the aluminum layer from the electrode portion.
14. A solar cell, wherein the solar cell is prepared by the solar cell production method of any one of claims 1 to 13.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110316377.8A CN115132859B (en) | 2021-03-24 | 2021-03-24 | Solar cell production method and solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110316377.8A CN115132859B (en) | 2021-03-24 | 2021-03-24 | Solar cell production method and solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115132859A CN115132859A (en) | 2022-09-30 |
| CN115132859B true CN115132859B (en) | 2023-07-14 |
Family
ID=83374781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110316377.8A Active CN115132859B (en) | 2021-03-24 | 2021-03-24 | Solar cell production method and solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115132859B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102468367A (en) * | 2010-11-18 | 2012-05-23 | 财团法人工业技术研究院 | Manufacturing method for light absorption layer and solar cell structure body using same |
| CN102763223A (en) * | 2010-02-12 | 2012-10-31 | 贺利氏北美肯肖霍肯贵金属材料有限责任公司 | Method for applying full back surface field and silver busbar to solar cell |
| CN108695009A (en) * | 2018-05-21 | 2018-10-23 | 江苏昊科汽车空调有限公司 | Modified high-efficient crystal silicon solar batteries and preparation method thereof |
-
2021
- 2021-03-24 CN CN202110316377.8A patent/CN115132859B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102763223A (en) * | 2010-02-12 | 2012-10-31 | 贺利氏北美肯肖霍肯贵金属材料有限责任公司 | Method for applying full back surface field and silver busbar to solar cell |
| CN102468367A (en) * | 2010-11-18 | 2012-05-23 | 财团法人工业技术研究院 | Manufacturing method for light absorption layer and solar cell structure body using same |
| CN108695009A (en) * | 2018-05-21 | 2018-10-23 | 江苏昊科汽车空调有限公司 | Modified high-efficient crystal silicon solar batteries and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115132859A (en) | 2022-09-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP3509111B1 (en) | Solar cell | |
| JP6189971B2 (en) | Solar cell and solar cell module | |
| EP2104147B1 (en) | Solar cell element and solar cell element manufacturing method | |
| JP5258325B2 (en) | Solar cell module | |
| JP2008512858A (en) | Manufacturing process and manufacturing method of emitter wrap through back contact solar cell | |
| WO2012081613A1 (en) | Solar battery and solar battery manufacturing method | |
| JP6018729B2 (en) | Solar cell backside fire-through paste composition and method for manufacturing solar cell | |
| JP6272332B2 (en) | Solar cell element and manufacturing method thereof | |
| JP2008270743A5 (en) | ||
| CN107112378B (en) | Solar cell, method for manufacturing same, and solar cell module | |
| WO2017154612A1 (en) | Conductive paste and solar cell | |
| EP2423967A2 (en) | Solar cell and method of manufacturing the same | |
| US20200176623A1 (en) | Solar cell element and solar cell module | |
| EP2688107A1 (en) | Solar cell and method for manufacturing the same | |
| JP5140132B2 (en) | Back electrode type solar cell with wiring substrate, solar cell module, and method for manufacturing back electrode type solar cell with wiring substrate | |
| JPWO2009157053A1 (en) | Photovoltaic device and manufacturing method thereof | |
| JP2017005041A (en) | Solar battery, and method of manufacturing solar battery | |
| EP2533295B1 (en) | Solar cell module | |
| CN115132859B (en) | Solar cell production method and solar cell | |
| TWI415280B (en) | Light power device and manufacturing method thereof | |
| EP2538448A2 (en) | Solar cell | |
| JP6495713B2 (en) | Solar cell element and manufacturing method thereof | |
| CN115132858B (en) | Solar cell production method and solar cell | |
| CN115132860B (en) | Solar cell production method and solar cell | |
| CN217606829U (en) | Solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |