CN115132790A - Organic light emitting display and method of manufacturing the same - Google Patents
Organic light emitting display and method of manufacturing the same Download PDFInfo
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- CN115132790A CN115132790A CN202210299024.6A CN202210299024A CN115132790A CN 115132790 A CN115132790 A CN 115132790A CN 202210299024 A CN202210299024 A CN 202210299024A CN 115132790 A CN115132790 A CN 115132790A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
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- 239000001257 hydrogen Substances 0.000 claims abstract description 117
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 117
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- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 22
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- 239000000463 material Substances 0.000 claims description 18
- 229910000077 silane Inorganic materials 0.000 claims description 15
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- 239000012495 reaction gas Substances 0.000 claims description 11
- 150000004820 halides Chemical class 0.000 claims description 10
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- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 8
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 5
- 239000011368 organic material Substances 0.000 claims description 5
- 239000000376 reactant Substances 0.000 claims description 5
- RTCWKUOBAKIBGZ-UHFFFAOYSA-N N-[ethyl(methyl)amino]silyl-N-methylethanamine Chemical compound CCN(C)[SiH2]N(C)CC RTCWKUOBAKIBGZ-UHFFFAOYSA-N 0.000 claims description 4
- VRTJHMCBRZESSC-UHFFFAOYSA-N [SiH4].C(C)NCC Chemical compound [SiH4].C(C)NCC VRTJHMCBRZESSC-UHFFFAOYSA-N 0.000 claims description 4
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 claims description 4
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims description 3
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- AIHCVGFMFDEUMO-UHFFFAOYSA-N diiodosilane Chemical compound I[SiH2]I AIHCVGFMFDEUMO-UHFFFAOYSA-N 0.000 claims 1
- GIRKRMUMWJFNRI-UHFFFAOYSA-N tris(dimethylamino)silicon Chemical compound CN(C)[Si](N(C)C)N(C)C GIRKRMUMWJFNRI-UHFFFAOYSA-N 0.000 claims 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
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- -1 bemethyl amine Chemical class 0.000 description 7
- QHGSGZLLHBKSAH-UHFFFAOYSA-N hydridosilicon Chemical compound [SiH] QHGSGZLLHBKSAH-UHFFFAOYSA-N 0.000 description 7
- 239000012466 permeate Substances 0.000 description 6
- 229910021529 ammonia Inorganic materials 0.000 description 5
- XTLYADHDMGFWPY-UHFFFAOYSA-N Cl[SiH2]Cl.Cl[SiH2]Cl Chemical compound Cl[SiH2]Cl.Cl[SiH2]Cl XTLYADHDMGFWPY-UHFFFAOYSA-N 0.000 description 4
- UOERHRIFSQUTET-UHFFFAOYSA-N N-propyl-N-silylpropan-1-amine Chemical compound CCCN([SiH3])CCC UOERHRIFSQUTET-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000001272 nitrous oxide Substances 0.000 description 4
- CGRVKSPUKAFTBN-UHFFFAOYSA-N N-silylbutan-1-amine Chemical compound CCCCN[SiH3] CGRVKSPUKAFTBN-UHFFFAOYSA-N 0.000 description 3
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- 238000006243 chemical reaction Methods 0.000 description 3
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- 230000000149 penetrating effect Effects 0.000 description 3
- 229920001230 polyarylate Polymers 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- WLSVLQJPKZNQJC-UHFFFAOYSA-N N-propan-2-ylpropan-2-amine silane Chemical compound [SiH4].C(C)(C)NC(C)C WLSVLQJPKZNQJC-UHFFFAOYSA-N 0.000 description 2
- 239000004697 Polyetherimide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
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- 238000005336 cracking Methods 0.000 description 2
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- UCXUKTLCVSGCNR-UHFFFAOYSA-N diethylsilane Chemical compound CC[SiH2]CC UCXUKTLCVSGCNR-UHFFFAOYSA-N 0.000 description 2
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229920001601 polyetherimide Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
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- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- NXUMVMWSUBRXCI-UHFFFAOYSA-N 2-phenyl-1,1-dipropylhydrazine Chemical compound CCCN(CCC)NC1=CC=CC=C1 NXUMVMWSUBRXCI-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- MDRNBKMSDSTZJO-UHFFFAOYSA-N chlorosilane Chemical compound [SiH3]Cl.[SiH3]Cl MDRNBKMSDSTZJO-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 125000001664 diethylamino group Chemical group [H]C([H])([H])C([H])([H])N(*)C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- OWKFQWAGPHVFRF-UHFFFAOYSA-N n-(diethylaminosilyl)-n-ethylethanamine Chemical compound CCN(CC)[SiH2]N(CC)CC OWKFQWAGPHVFRF-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
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- 239000004417 polycarbonate Substances 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Images
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Computer Hardware Design (AREA)
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- Optics & Photonics (AREA)
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Abstract
An organic light emitting display and a method of fabricating the same are provided, and more particularly, to an organic light emitting display driven by a thin film transistor and a method of fabricating the same. The organic light emitting display includes a substrate, a thin film transistor provided on the substrate, an organic light emitting part provided on the thin film transistor, a first passivation layer provided on the organic light emitting part by a chemical vapor deposition process, and a hydrogen blocking layer provided on at least one surface of the first passivation layer by an atomic layer deposition process and including silicon nitride.
Description
Technical Field
The present invention relates to an organic light emitting display and a method of fabricating the same, and more particularly, to an organic light emitting display provided with a passivation layer and a method of fabricating the same.
Background
An Organic Light Emitting Display (OLED) is a self-luminous display, and unlike a Liquid Crystal Display (LCD), the OLED has the advantage of being light and thin because it does not require a separate light source. In addition, the organic light emitting display may be driven at a low voltage, and thus the organic light emitting display may have advantages in power consumption and also have excellent response speed (response speed), viewing angle (viewing angle), and contrast ratio (contrast ratio). Therefore, the organic light emitting display is actively being researched as a display of the next generation.
An encapsulation layer including a passivation layer to protect an organic light emitting portion from external environments such as moisture, physical impact, and foreign materials, which may be generated during a manufacturing process, is formed in an organic light emitting display.
According to the related art, the passivation layer of the organic light emitting display mainly uses a silicon oxide layer. However, when a silicon oxide layer is used as the passivation layer, the silicon oxide layer is changed by reaction with moisture in the atmosphere, resulting in a defect that the organic light emitting part is not sufficiently protected. In addition, in order to solve the above-mentioned defects, a method of using a silicon nitride layer as a passivation layer has been proposed. In this case, however, a large amount of hydrogen contained in the silicon nitride layer may permeate into the thin film transistor to increase a leakage current of the thin film transistor, thereby deteriorating electrical characteristics, such as a high threshold voltage.
[ publicly known technical documents ]
[ patent documents ]
(patent document 0001) KR 10-2014-0064136A
Disclosure of Invention
The invention provides an organic light emitting display with improved durability and reliability and a method for manufacturing the same.
According to an exemplary embodiment, an organic light emitting display includes: the thin film transistor includes a substrate, a thin film transistor provided on the substrate, an organic light emitting part provided on the thin film transistor, a first passivation layer provided on the organic light emitting part and provided by a chemical vapor deposition process, and a hydrogen blocking layer provided on at least one surface of the first passivation layer, including silicon nitride, and provided by an atomic layer deposition process.
The hydrogen gas blocking layer may have a hydrogen content equal to or less than 20 at% with respect to the overall hydrogen content of the hydrogen gas blocking layer.
The thickness of the hydrogen blocking layer may be less than the thickness of the first passivation layer.
The organic light emitting display may further include: a particle-shielding layer provided on the first passivation layer and a second passivation layer provided on the particle-shielding layer, wherein a hydrogen blocking layer may be provided between the organic light-emitting portion and the first passivation layer and/or between the first passivation layer and the particle-shielding layer.
The particle blocking layer may comprise an organic material, and each of the first passivation layer and the second passivation layer may comprise at least one of silicon oxide, silicon nitride, or silicon oxynitride.
The hydrogen blocking layer may have a hydrogen content less than a hydrogen content of each of the particle shielding layer and the second passivation layer.
The thin film transistor may include an active layer including oxide.
According to another exemplary embodiment, a method of manufacturing an organic light emitting display includes: the method includes providing a substrate on which an organic light emitting part is formed on a thin film transistor, forming a hydrogen blocking layer including silicon nitride to shield the organic light emitting part through an atomic layer deposition process, and forming a first passivation layer on the hydrogen blocking layer through a chemical vapor deposition process.
According to still another exemplary embodiment, a method of manufacturing an organic light emitting display includes: the method includes providing a substrate on which an organic light emitting part is formed on a thin film transistor, forming a first passivation layer on the organic light emitting part through a chemical vapor deposition process, and forming a hydrogen blocking layer including silicon nitride on the first passivation layer through an atomic layer deposition process.
Forming the hydrogen barrier layer may include: supplying a source material gas containing silicon into a process space to form a hydrogen barrier layer, and supplying a reaction gas into the process space, wherein supplying the reaction gas may comprise: rf power is applied to the process volume to excite the reactant gases.
The source material gas may comprise at least one of an amino silicon-containing gas or a halide silicon-containing gas.
The amino-silicon containing gas may include at least one of Trisilylamine (TSA) gas, bis (tertiary-butylamino) silane (BTBAS) gas, bis (dimethylamino) silane (bis (dimethyllamino) silane, BDMAS) gas, bisdiethylamine silane (bis (diethylsilane), BDEAS) gas, dimethylaminosilane (dimethyllaminose, DMAS) gas, diethylamine silane (diethylsilane, DEAS) gas, dipropylaminosilane (dipropylaminophenylamine, DPAS) gas, butylaminosilane (butyllaminose, BAS) gas, diisopropylamine (diisopropylamine, dipamidosilane) gas, bis (ethylmethylamino) silane (bemethyl amine), bis (dimethylamino) silane (bis (dimethylamine), bis (dimethylamino) silane, DMAS) gas, or dimethylamino) silane (dimethylamino) gas.
The halide-based silicon-containing gas may include at least one of Monochlorosilane (MCS) gas, Dichlorosilane (DCS) gas, Trichlorosilane (TCS) gas, tetrachlorosilane (STC) gas, Hexachlorodisilane (HCDS) gas, Octachlorotris (OCTS) gas, or diiodosilane (diiodosilane) gas.
The reaction gas may comprise at least one of a nitrogen-containing gas or a hydrogen-containing gas.
The formation of the hydrogen barrier layer may be performed at a temperature of 120 c or less.
Drawings
The exemplary embodiments can be understood in more detail based on the following description and the associated drawings, in which:
fig. 1 is a drawing showing a structure of an organic light emitting display according to an exemplary embodiment.
Fig. 2 is a drawing showing a structure of an organic light emitting display according to another exemplary embodiment.
Fig. 3 is a schematic view illustrating a method of manufacturing an organic light emitting display according to an exemplary embodiment.
Fig. 4 is a schematic view illustrating a method of manufacturing an organic light emitting display according to another exemplary embodiment.
[ description of reference ]
100 organic light emitting display
110 base plate
120 thin film transistor
130 insulating layer
140 planarizing layer
150 organic light emitting part
152 anode layer
154 organic light emitting layer
156 cathode layer
158 bank layer
160 first passivation layer
170 hydrogen barrier layer
180 particle shielding layer
190 second passivation layer
S110, S120, S130, S140, S210, S220, S230, S240, a process
Detailed Description
Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size of layers and regions may be exaggerated for clarity. Like numbers refer to like elements throughout.
Fig. 1 is a drawing illustrating a structure of an organic light emitting display according to an exemplary embodiment, and fig. 2 is a drawing illustrating a structure of an organic light emitting display according to another exemplary embodiment.
Referring to fig. 1 and 2, the organic light emitting display 100 includes a substrate 110, a thin film transistor 120 provided on the substrate 110, an organic light emitting part 150 provided on the thin film transistor 120, a first passivation layer 160 provided on the organic light emitting part 150 and formed by a chemical vapor deposition process, and a hydrogen blocking layer 170 provided on at least one surface of the first passivation layer 160, wherein the hydrogen blocking layer 170 includes silicon nitride and is formed by an atomic layer deposition process. In addition, the organic light emitting display 100 may further include a particle blocking layer 180 provided on the first passivation layer 160 and a second passivation layer 190 provided on the particle blocking layer 180.
Here, the organic light emitting display 100 may be an emission-type organic light emitting display 100 in which light generated from the organic light emitting part 150 is transmitted to the top side of the substrate 110 on which the thin film transistor 120 is formed.
The substrate 110 supports various structures disposed on the substrate 110. Such a substrate 110 may be made of an insulating material and may include a flexible substrate having flexibility. For example, the substrate 110 may include a material having excellent heat resistance and heat resistance, such as Polyimide (PI), Polyetherimide (PEI), polyethylene terephthalate (PET), Polycarbonate (PC), polyethylene naphthalate (PAR), and Polyarylate (PAR).
The thin film transistor 120 is provided on the substrate 110. The thin film transistor 120 may include an active layer, a gate electrode, a source electrode, and a drain electrode. The thin film transistor 120 may have various structures such as a top gate structure, a bottom gate structure, and a coplanar structure. Although not shown, the organic light emitting display 100 may include various wirings made of the same material as the gate electrode, the source electrode, and the drain electrode.
Here, the thin film transistor 120 may be an oxide Thin Film Transistor (TFT) having an active layer including an oxide.
In the case of using a thin film transistor according to the related art, an active layer of the thin film transistor is amorphous silicon (a-Si). In the case of using amorphous silicon, the thin film may be grown at a low temperature to minimize the change of the insulating substrate, but amorphous silicon may have a very low mobility of charges.
Therefore, in recent years, there have been active attempts to use oxides, such as metal oxides, capable of performing all three of conductivity, semiconductivity and resistance characteristics according to the composition of the oxides. However, in the case of using an oxide thin film transistor having an active layer including an oxide, when hydrogen may permeate into the active layer, leakage of current may become large, and a threshold voltage may become high to deteriorate electrical characteristics.
In an exemplary embodiment, in the organic light emitting display driven by the oxide thin film transistor, a hydrogen blocking layer 170 for preventing hydrogen from penetrating into an active layer of the oxide thin film transistor may be disposed on at least one surface of the first passivation layer 160 to improve durability and reliability of the organic light emitting display device. Details of the hydrogen barrier layer 170 are described later.
An insulating layer 130 may be provided on the thin film transistor 120 to shield the source electrode, the drain electrode, and the active layer. The insulating layer 130 may be provided to protect the thin film transistor 120 from moisture or oxygen, and may be disposed on the entire surface of the substrate 110 to expose a portion of the drain electrode or the source electrode of the thin film transistor 120. In addition, a planarization layer 140 may be provided on the insulating layer 130. The planarization layer 140 may have a contact hole exposing a portion of the drain electrode or the source electrode.
The organic light emitting part 150 is provided on the thin film transistor 120. For example, when the insulating layer 130 and the planarization layer 140 are provided on the thin film transistor 120, the organic light emitting part 150 may be provided on the planarization layer 140. The organic light emitting part 150 may include an anode layer 152, an organic light emitting layer 154, and a cathode layer 156.
The anode layer 152 may be connected to a drain electrode or a source electrode of the thin film transistor 120 through a contact hole of the planarization layer 140, for example. The bank layer 158 may be disposed on each of both surfaces of the anode layer 152, and the bank layer 158 may have a tapered profile.
The organic light emitting layer 154 may be a layer body for generating light and may be made of an organic light emitting material for generating light. Here, the organic light emitting layer 154 may be provided by laminating organic light emitting material layers respectively emitting light having a plurality of colors. However, the organic light emitting layer 154 is not limited thereto and may be made of various materials capable of emitting light having various colors.
A cathode layer 156 is provided on the organic light emitting layer 154. Since the organic light emitting display may be the top emission type organic light emitting display 100, the cathode layer 156 may be made of Transparent Conductive Oxide (TCO) or a metal material having a very thin thickness and a low work function. When the cathode layer 156 is made of a metal material, the cathode layer 156 may have several hundred angstroms
Or less, and when the cathode layer 156 has such a thickness, the cathode layer 156 may be a substantially transparent layer.
A first passivation layer 160 is provided on the cathode layer 156. That is, the first passivation layer 160 may be provided on the organic light emitting part 150 to shield the organic light emitting part 150. The first passivation layer 160 serves to protect the organic light emitting part 150 from moisture or air, which may permeate from the outside, or physical impact.
The first passivation layer 160 may include at least one of silicon oxide (SiO), silicon nitride (SiN), or silicon oxynitride (SiON). The first passivation layer 160 may have about a Chemical Vapor Deposition (CVD) process by simultaneously supplying a source gas and a reaction gas
From (angstroms) to about
Of the substrate. For example, a source gas containing a hydrogen-based silicon-containing gas (hydrogen-based silicon-containing gas) and a nitrous oxide-containing gas (N) 2 O) may be simultaneously supplied to form the first passivation layer 160 containing silicon oxide, the source material gas containing the hydrido-silicon-containing gas, and the source material gas containing ammonia (NH) 3 ) May be simultaneously supplied to form the first passivation layer 160 containing silicon nitride, or may contain hydrogenSilicon-based source gas and nitrous oxide-containing gas (N) 2 O) and ammonia (NH) 3 ) May be simultaneously supplied to form the first passivation layer 160 comprising silicon oxynitride. Herein, the hydrogen silicon-containing gas may comprise Silane (SiH) gas 4 )。
A hydrogen barrier layer 170 is provided on at least one surface of the first passivation layer 160 to prevent hydrogen from permeating into the thin film transistor 120. Here, as shown in the exemplary embodiment illustrated in fig. 1, the hydrogen blocking layer 170 may be provided below the first passivation layer 160, i.e., between the organic light emitting part 150 and the first passivation layer 160, or as shown in another exemplary embodiment illustrated in fig. 2 to be described below, the hydrogen blocking layer 170 may be provided above the first passivation layer 160, i.e., between the first passivation layer 160 and the particle shielding layer 180 (PCL). Although the hydrogen blocking layer 170 is disposed on the bottom or top surface of the first passivation layer 160 in fig. 1 and 2, the hydrogen blocking layer 170 may be disposed on each of the top and bottom surfaces of the first passivation layer 160, and a separate layer body for performing additional functions may be further provided between the first passivation layer 160 and the hydrogen blocking layer 170.
The hydrogen barrier layer 170 may be formed by an atomic layer deposition process in which source gases and reaction gases are sequentially supplied. As described above, when the hydrogen blocking layer 170 is formed by the atomic layer deposition process, the density of the hydrogen blocking layer 170 may be increased to prevent hydrogen contained in a thin film (e.g., the particle shielding layer 180 or the second passivation layer 190) disposed on the hydrogen blocking layer 170 from permeating into the thin film transistor 120. Here, since the hydrogen barrier layer 170 formed by the atomic layer deposition process is deposited at a lower deposition rate than the first passivation layer 160 formed by the chemical vapor deposition process, the hydrogen barrier layer 170 may have a smaller thickness than the first passivation layer 160 to minimize a reduction in process speed.
The hydrogen barrier layer 170 may be formed by an atomic layer deposition process using a gas including at least one of an amino-based silicon-containing gas (amino-based silicon-containing gas) or a halide-based silicon-containing gas (halide-based silicon-containing gas) as a source gas and using a gas including at least one of a nitrogen-containing gas or a hydrogen-containing gas as a reaction gas. Herein, the amino-silicon-containing gas may include Trisilylamine (TSA) gas, bis (tertiary-butylamino) silane (bis, BTBAS) gas, bis (dimethylamino) silane (bis (dimethyllamino) silane, BDMAS) gas, bisdiethylaminosilane (bis (diethylamino) silane, BDEAS) gas, dimethylaminostilane (dimethylaminostorane, DMAS) gas, diethylamine silane (diethylamino, DEAS) gas, dipropylaminosilane (dipropylaminosilane, DPAS) gas, butylaminosilane (butyllaminosilane, BAS) gas, diisopropylamine silane (diisopropylamine, dipamide) gas, bis (ethylmethylamino) silane (bis, tetramethylaminosilane) gas, bis (dimethylamino) silane (bis, dichlorosilane) gas, wherein at least one of the trisilyl, dichlorosilane (dichlorosilane) gas, bis (dichlorosilane ) gas, or dichlorosilane (dichlorosilane) halide gas, wherein the bis (dimethylamino) silane (bis (dichlorosilane) gas may include at least one of the tris (chlorosilane, bis (dimethylamino) silane (dichlorosilane (bis (dichlorosilane, bis (dichlorosilane) gas, BTBAS) gas, and wherein the bis (dichlorosilane) gas may include at least one of the chloro-silane (chloro-silane) gas, bis (dichlorosilane (bis (chloro-chlorosilane, bis (dichlorosilane) gas, bis (dichlorosilane) gas, bis (dichlorosilane) gas, bis (dichlorosilane) gas, bis (dichlorosilane) gas, bis (dichlorosilane) gas, bis (dichlorosilane) gas, bdms) gas, bis (dichlorosilane, bdms) gas, bis (dichlorosilane, bis, At least one of Trichlorosilane (TCS) gas, tetrachlorosilane (STC) gas, Hexachlorodisilane (HCDS) gas, octachlorotris silane (OCTS) gas, or diiodosilane (diiodosilane) gas.
Silane gas (SiH) 4 ) Has a molecular structure in which four hydrogen atoms are chemically bonded to one silicon atom. Therefore, when supplying silane gas (SiH) 4 ) When the hydrogen barrier layer 170 is formed, the hydrogen barrier layer 170 may have a high hydrogen content, and thus a large amount of hydrogen contained in the hydrogen barrier layer 170 may permeate into the thin film transistor to deteriorate electrical characteristics, such as a large leakage current of the thin film transistor and a high threshold voltage. Further, silane gas (SiH) 4 ) Has low absorption property (low absorption property). That is, in order to form the first passivation layer 160 by the atomic layer deposition process, the source gas needs to be absorbed first, but the silane gas (SiH) 4 ) There may be defects in which it is difficult to form the first passivation layer 160 through the atomic layer deposition process due to its low absorption property. Thus, in one exemplary embodiment, silicon-containing amino groups may be usedAt least one of a gas and a halide-based silicon-containing gas is used as a source gas, and thus the hydrogen barrier layer 170 may have a dense structure in an atomic layer deposition process while having a hydrogen content equal to or less than about 20 atomic percent (at%), such as about 10 at% to about 15 at%, relative to the overall content of the hydrogen barrier layer 170, and also having a lower hydrogen content than each of the particle shielding layer 180 and the second passivation layer 190 described below.
A particle blocking layer 180 is provided on the first passivation layer 160. Herein, when the hydrogen blocking layer 170 is provided under the first passivation layer 160 as shown in one exemplary embodiment, the particle-shielding layer 180 may be provided to shield the first passivation layer 160, and when the hydrogen blocking layer 170 is provided over the first passivation layer 160 as shown in another exemplary embodiment, the particle-shielding layer 180 may be provided to shield the hydrogen blocking layer 170.
When the particles are present on the organic light emitting portion 150, the particle-shielding layer 180 as a whole serves to shield the particles to planarize the top surface. The particle shielding layer 180 may be made of various materials, such as organic materials, e.g., carbon compounds, but not limited thereto. The hydrogen content of the particle-shielding layer 180 made of an organic material is greater than that of the hydrogen barrier layer 170, and the hydrogen barrier layer 170 may prevent hydrogen from permeating from the particle-shielding layer 180 having a high hydrogen content to the thin film transistor 120.
Here, the thickness of the particle blocking layer 180 may be greater than the thickness of each of the first passivation layer 160 and a second passivation layer 190, which will be described below. The particle-shielding layer 180 may have a sufficient thickness to reliably shield particles when the particles are introduced during the manufacturing process. Here, the thickness of the particle blocking layer 180 may be greater than the thickness of each of the first passivation layer 160 and the second passivation layer 190.
A second passivation layer 190 may be provided on the particle-shielding layer 180 to shield the particle-shielding layer 180. The second passivation layer 190 may also serve to protect the organic light emitting part 150 from moisture, air, or physical impact that may permeate from the outside, and each of the first passivation layer 160, the particle blocking layer 180, and the second passivation layer 190 provided to block the organic light emitting part 150 may serve as an encapsulation layer of the organic light emitting display 100.
The second passivation layer 190 may include at least one of silicon oxide (SiO), silicon nitride (SiN), or silicon oxynitride (SiON). Here, by simultaneously supplying a source material gas containing a hydrogen-based silicon-containing gas and a nitrous oxide-containing gas (N) 2 O) or ammonia (NH) 3 ) The second passivation layer 190 may also have a thickness of about one of the first passivation layer and the second passivation layer
To about
Various thicknesses within the range of (a). As described above, the second passivation layer 190 and the first passivation layer 160 may be made of different materials. In this case, the material of the second passivation layer 190, which is different from the material of the first passivation layer 160, may be determined according to the function of the second passivation layer 190. Since the second passivation layer 190 is not directly in contact with the organic light emitting portion 150 and is disposed outside the organic light emitting display 100, a function somewhat different from that of the first passivation layer 160 (e.g., a function of mainly blocking moisture from being introduced into the organic light emitting display 100 from the outside) may be performed, and thus a material forming the second passivation layer 190 may be determined. In addition, the material or thickness of the second passivation layer 190 may be determined such that delamination (delamination) or cracking (cracking) of the second passivation layer 190 is minimized at the edge region of the substrate 110.
As described above, the hydrogen content of the second passivation layer 190 formed by the chemical vapor deposition process using the source gas containing the hydrogen-based silicon-containing gas may also be greater than that of the hydrogen barrier layer 170, and thus the hydrogen barrier layer 170 may prevent hydrogen from permeating into the thin film transistor 120 from the second passivation layer 190 having a high hydrogen content.
Hereinafter, a method of manufacturing an organic light emitting display according to an exemplary embodiment will be described in detail with reference to fig. 3 and 4. In describing a method of manufacturing an organic light emitting display according to an exemplary embodiment, a description overlapping with that of the above-described organic light emitting display will be omitted.
Fig. 3 is a schematic view illustrating a method of manufacturing an organic light emitting display according to an exemplary embodiment, and fig. 4 is a schematic view illustrating a method of manufacturing an organic light emitting display according to another exemplary embodiment.
Referring to fig. 3, a method of fabricating an organic light emitting display 100 according to an exemplary embodiment includes a process of providing a substrate 110 having an organic light emitting part 150 formed thereon on a thin film transistor 120, a process of forming a hydrogen blocking layer 170 including silicon nitride to shield the organic light emitting part 150 through an atomic layer deposition process S130, and a process of forming a first passivation layer 160 on the hydrogen blocking layer 170 through a chemical vapor deposition process S140.
Referring to fig. 4, a method of fabricating an organic light emitting display 100 according to another exemplary embodiment includes a process of providing a substrate 110 having an organic light emitting part 150 formed thereon on a thin film transistor 120, a process S230 of forming a first passivation layer 160 to shield the organic light emitting part 150 through a chemical vapor deposition process, and a process S240 of forming a hydrogen barrier layer 170 including silicon nitride on the first passivation layer 160 through an atomic layer deposition process.
The process S130 of forming the hydrogen blocking layer 170 and the process S140 of forming the first passivation layer 160 in the exemplary embodiment and the process S230 of forming the first passivation layer 160 and the process S240 of forming the hydrogen blocking layer 170 in another exemplary embodiment are different from each other only in the formation sequence of the thin film, and thus will be collectively described as the processes S130 and S240 of forming the hydrogen blocking layer 170 and the processes S140 and S230 of forming the first passivation layer 160.
Furthermore, although the method of forming the hydrogen blocking layer 170 on the bottom or top surface of the first passivation layer 160 is illustrated in fig. 3 and 4, the hydrogen blocking layer 170 may be formed on each of the top and bottom surfaces of the first passivation layer 160, and a separate layer body for performing additional functions may be further provided between the first passivation layer 160 and the hydrogen blocking layer 170.
In the process of providing the substrate 110, the substrate 110 formed with the organic light emitting portion 150 is provided on the thin film transistor 120. Herein, the process of providing the substrate 110 may include processes S110 and S210 of forming the thin film transistor 120 on the substrate 110 and processes S120 and S220 of forming the organic light emitting part 150 on the thin film transistor 120.
In the processes S110 and S210 of forming the thin film transistor 120, the thin film transistor 120 including an active layer, a gate electrode, a source electrode and a drain electrode is formed on the substrate 110. Here, the thin film transistor 120 may be an oxide Thin Film Transistor (TFT) having an active layer including an oxide.
In the processes S120 and S220 of forming the organic light emitting part 150, the organic light emitting part 150 is formed on the thin film transistor 120. Here, an insulating layer 130 and a planarization layer 140 may be provided on the thin film transistor 120 to shield the source electrode, the drain electrode, and the active layer, and the insulating layer 130 may be formed on the entire surface of the substrate 110 to expose a portion of the drain electrode or the source electrode, and the planarization layer 140 may be formed to have a contact hole through which the portion of the drain electrode or the source electrode is exposed.
The organic light emitting part 150 may include an anode layer 152, an organic light emitting layer 154, and a cathode layer 156. Here, the anode layer 152 may be connected to a source electrode or a drain electrode of the thin film transistor 120 through a contact hole of the planarization layer 140, for example. A bank 158 may be disposed on each of both surfaces of the anode layer 152, and the bank 158 may have a tapered profile. In addition, an organic light emitting layer 154 may be formed on the anode layer 152, and a cathode layer 156 may be provided on the organic light emitting layer 154.
In the processes S130 and S240 of forming the first passivation layer 160, the first passivation layer 160 is formed by a chemical vapor deposition process in which source gases and reaction gases are simultaneously supplied. In this case, the gas containing, for example, silane gas (SiH) may be supplied simultaneously 4 ) Hydrogen-based silicon-containing gas source gas and, for example, ammonia (NH) 3 ) Nitrous oxide gas (N) 2 O), etc., to form the first passivation layer 160.
In the processes S140 and S230 of forming the hydrogen barrier layer 170, the hydrogen barrier layer 170 is formed by an atomic layer deposition process in which the source gas and the reaction gas are simultaneously supplied. The atomic layer deposition process may be performed a plurality of times as a cycle with the supply and purging of the source gases and the supply and purging of the reactant gases, and the plasma may be generated by applying rf power to the process volume while the reactant gases are supplied.
Accordingly, the hydrogen barrier layer 170 may be formed to prevent hydrogen from penetrating into the thin film transistor 120, and the hydrogen barrier layer 170 may also be formed by an atomic layer deposition process using a gas including at least one of an amino silicon-containing gas or a halide based silicon-containing gas as a source gas and using at least one of a nitrogen-containing gas or a hydrogen-containing gas as a reaction gas. Herein, as described above, the amino-silicon-containing gas may include Trisilylamine (TSA) gas, bis (tertiary-butylamino) silane (BTBAS) gas, bis (dimethylamino) silane (BDMAS) gas, bisdiethylamine silane (BDEAS) gas, Dimethylaminostilane (DMAS) gas, diethylamine silane (DEAS) gas, Dipropylaminosilane (DPAS) gas, butylaminosilane (butyllaminose, BAS) gas, diisopropylamine silane (diacetoneas, dipalmitosilane) gas, bis (ethylmethylamino) silane (bismethyl-mas) gas, or dichlorosilane (dichlorosilane) (bechms) gas, wherein the trisilylamine (dichlorosilane) gas may include at least one of a trisamino-silane (tris-chloro-silane) halide gas, a dichlorosilane (dichlorosilane) (becmas) gas, or a dichlorosilane (dichlorosilane) (bechams) gas, DCS) gas, Trichlorosilane (TCS) gas, tetrachlorosilane (STC) gas, Hexachlorodisilane (HCDS) gas, Octachlorotris (OCTS) gas, or diiodosilane (diiodosilane) gas. In addition, nitrogen (N) gas, for example, can be used 2 ) Ammonia (NH) 3 ) And hydrogen (H) 2 ) At least one of the nitrogen-containing gas and the hydrogen-containing gas as a reaction gas.
That is, in an exemplary embodiment, a gas including at least one of an amino silicon-containing gas or a halide based silicon-containing gas may be used as the source gas, and thus the hydrogen barrier layer 170 may have a dense structure in the atomic layer deposition process while having a hydrogen content equal to or less than about 20 at% (e.g., about 10 at% to about 15 at%) with respect to the entire content of the hydrogen barrier layer 170, and also having a lower hydrogen content than each of the particle shielding layer 180 and the second passivation layer 190 formed on the hydrogen barrier layer 170. In addition, in the processes S140 and S230 of forming the hydrogen barrier layer 170, since the hydrogen barrier layer 170 is formed through the atomic layer deposition process in which the rf power is applied to the process space while the reaction gas is supplied to generate plasma, the processes may be performed at a temperature of about 120 ℃ or less, i.e., a temperature of about 80 ℃ to about 120 ℃.
The process of forming the particle blocking layer 180 may be performed after the process S140 of forming the hydrogen barrier layer 170 in the case of one exemplary embodiment, and the process of forming the particle blocking layer 180 may be performed after the process S240 of forming the first passivation layer 160 in the case of another exemplary embodiment. The particle blocking layer 180 may be provided to block the hydrogen blocking layer 170 or the first passivation layer 160 on the hydrogen blocking layer 170 or the first passivation layer 160, and a liquid organic material may be applied to form the particle blocking layer 180 during the process of forming the particle blocking layer 180. In addition, after the process of forming the particle-shielding layer 180, a process of forming the second passivation layer 190 may be performed, and as described above, the second passivation layer 190 may be provided on the particle-shielding layer 180 to shield the particle-shielding layer, thereby protecting the organic light emitting part 150 from moisture or air that may permeate from the outside or physical impact.
As described above, the hydrogen blocking layer may be formed on at least one surface of the first passivation layer provided on the organic light emitting part to prevent hydrogen from penetrating into the thin film transistor.
In addition, a hydrogen gas blocking layer containing silicon nitride may be formed to have a low hydrogen content, thereby preventing hydrogen from diffusing into the thin film transistor in the hydrogen gas blocking layer.
Therefore, leakage current of the thin film transistor can be reduced, and the threshold voltage can be reduced to improve the operating characteristics of the thin film transistor (operation characteristics), and to improve the durability and reliability of the organic light emitting display including the thin film transistor.
Although specific embodiments have been described and illustrated using specific terms, the terms are merely examples for clearly explaining the exemplary embodiments, and thus, it is apparent to those of ordinary skill in the art that the exemplary embodiments and the technical terms can be embodied in other specific forms and changed without changing the technical concept or essential features. Therefore, it should be understood that simple changes according to exemplary embodiments of the present invention may belong to the technical spirit of the present invention.
Claims (15)
1. An organic light emitting display, comprising:
a substrate;
a thin film transistor provided on the substrate;
an organic light emitting part provided on the thin film transistor;
a first passivation layer provided on the organic light emitting part and provided by a chemical vapor deposition process; and
a hydrogen barrier layer provided on at least one surface of the first passivation layer, the hydrogen barrier layer comprising silicon nitride and being provided by an atomic layer deposition process.
2. The organic light emitting display of claim 1, wherein the hydrogen barrier layer has a hydrogen content equal to or less than 20 atomic percent relative to the overall hydrogen content of the hydrogen barrier layer.
3. The organic light emitting display of claim 1, wherein the hydrogen blocking layer has a thickness less than a thickness of the first passivation layer.
4. The organic light emitting display of claim 1, further comprising:
a particle shielding layer provided on the first passivation layer; and
a second passivation layer provided on the particle-shielding layer,
wherein the hydrogen blocking layer is provided between the organic light emitting portion and the first passivation layer and/or between the first passivation layer and the particle shielding layer.
5. The organic light-emitting display of claim 4, wherein the particle-shielding layer comprises an organic material, and wherein
Each of the first passivation layer and the second passivation layer includes at least one of silicon oxide, silicon nitride, or silicon oxynitride.
6. The organic light-emitting display of claim 4, wherein the hydrogen blocking layer has a hydrogen content less than a hydrogen content of each of the particle blocking layer and the second passivation layer.
7. The organic light emitting display of claim 1, wherein the thin film transistor comprises an active layer comprising oxide.
8. A method of fabricating an organic light emitting display, the method comprising:
providing a substrate formed with an organic light emitting part on a thin film transistor;
forming a hydrogen blocking layer comprising silicon nitride by an atomic layer deposition process to shield the organic light emitting part; and
a first passivation layer is formed on the hydrogen barrier layer by a chemical vapor deposition process.
9. A method of fabricating an organic light emitting display, the method comprising:
providing a substrate formed with an organic light emitting part on a thin film transistor;
forming a first passivation layer on the organic light emitting part by a chemical vapor deposition process; and
a hydrogen barrier layer comprising silicon nitride is formed on the first passivation layer by an atomic layer deposition process.
10. The method of claim 8 or 9, wherein forming the hydrogen barrier layer comprises:
supplying a source material gas containing silicon into a process space to form the hydrogen barrier layer; and
a reaction gas is supplied into the process space,
wherein supplying the reaction gas comprises: RF power is applied to the process volume to excite the reactant gas.
11. The method of claim 10, wherein the source gas comprises at least one of an amino silicon-containing gas or a halide silicon-containing gas.
12. The method of claim 11, wherein the amino-silicon-containing gas comprises at least one of trisilylamine gas, bis (tertiary butylamino) silane gas, bis (dimethylamino) silane gas, bisdiethylamine silane gas, dimethylaminosilane gas, diethylamine silane gas, dipropylamidosilane gas, butylamidosilane gas, diisopropylaminasilane gas, bis (ethylmethylamino) silane gas, or tris (dimethylamino) silane gas.
13. The method of claim 11, wherein the halide-based silicon-containing gas comprises at least one of monochlorosilane gas, dichlorosilane gas, trichlorosilane gas, tetrachlorosilane gas, hexachlorodisilane gas, octachlorotris silane gas, or diiodosilane gas.
14. The method of claim 10, wherein the reactant gas comprises at least one of a nitrogen-containing gas or a hydrogen-containing gas.
15. The method of claim 8 or 9, wherein the forming of the hydrogen barrier layer is performed at a temperature of 120 ℃ or less.
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| KR10-2021-0038898 | 2021-03-25 | ||
| KR1020210038898A KR20220133590A (en) | 2021-03-25 | 2021-03-25 | Organic light emitting display and method for manufacturing the same |
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