CN115118153A - H-bridge driving circuit, driving method and device based on charge pump - Google Patents

H-bridge driving circuit, driving method and device based on charge pump Download PDF

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Publication number
CN115118153A
CN115118153A CN202210728234.2A CN202210728234A CN115118153A CN 115118153 A CN115118153 A CN 115118153A CN 202210728234 A CN202210728234 A CN 202210728234A CN 115118153 A CN115118153 A CN 115118153A
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Prior art keywords
circuit
bridge
driving
charge pump
energy storage
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Granted
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CN202210728234.2A
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CN115118153B (en
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陈启跃
张彬彬
赵宇鑫
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Beijing Jinnuomi Technology Co ltd
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Beijing Jinnuomi Technology Co ltd
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • H02M1/0054—Transistor switching losses
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/539—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters with automatic control of output wave form or frequency
    • H02M7/5395—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters with automatic control of output wave form or frequency by pulse-width modulation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)

Abstract

The application relates to an H-bridge driving circuit based on a charge pump, a driving method and a device, belonging to the technical field of power electronics, wherein the H-bridge driving circuit comprises a charge pump circuit, a first energy storage circuit connected with the charge pump circuit and a driving module connected with the first energy storage circuit; the charge pump circuit is used for periodically charging the first energy storage circuit; the driving module is used for outputting a high-side driving signal, and the high-side driving signal is used for conducting a high-side MOS (metal oxide semiconductor) tube of an H bridge; the first tank circuit is used for maintaining the voltage amplitude of the high-side driving signal. This application has and makes the high limit MOS pipe work of H bridge at the low resistance on-state, is showing the conduction loss that has reduced the high limit MOS pipe of H bridge, has improved the life of the high limit MOS pipe of H bridge, has avoided burning out of the high limit MOS pipe of H bridge to a certain extent.

Description

H-bridge driving circuit, driving method and device based on charge pump
Technical Field
The present disclosure relates to the field of power electronics, and in particular, to an H-bridge driving circuit, a driving method, and a driving apparatus based on a charge pump.
Background
Bridge drives are one of the most common driving methods for inverters. The bridge type driving circuit adopts 4 MOS tubes to form an H bridge, and two opposite high and low MOS tubes are alternately conducted to form positive and negative driving voltages, so that direct current is converted into alternating current.
At present, the H-bridge circuit is widely driven by using an H-bridge driving chip, a bootstrap capacitor is charged when the low side of the H-bridge is conducted, and the bootstrap capacitor is discharged to provide driving voltage for a high-side MOS tube when the high side of the H-bridge is conducted.
Aiming at the related technology, the inventor finds that the grid driving voltage of the H-bridge high-side MOS tube is reduced along with the continuous consumption of the electric charge in the discharge process of the bootstrap capacitor, so that the conduction channel on-resistance of the H-bridge high-side MOS tube is increased, the conduction loss of the H-bridge high-side MOS tube is obviously improved, the service life of the H-bridge high-side MOS tube is shortened, and the H-bridge high-side MOS tube is easily burnt under the condition of large current.
Disclosure of Invention
In order to reduce the conduction loss of an H-bridge high-side MOS tube, the application provides an H-bridge driving circuit, a driving method and a device based on a charge pump.
In a first aspect, the present application provides an H-bridge driving circuit based on a charge pump, which adopts the following technical scheme:
an H-bridge driving circuit based on a charge pump comprises a charge pump circuit, a first energy storage circuit connected with the charge pump circuit, and a driving module connected with the first energy storage circuit;
the charge pump circuit is used for periodically charging the first energy storage circuit;
the driving module is used for outputting a high-side driving signal, and the high-side driving signal is used for conducting a high-side MOS (metal oxide semiconductor) tube of an H bridge;
the first tank circuit is used for maintaining the voltage amplitude of the high-side driving signal.
Through adopting above-mentioned technical scheme, charge pump circuit periodically charges for first tank circuit, make first tank circuit to the back of discharging of drive module, can in time be charged by charge pump circuit, through second condenser C2 through repeated charging and discharging, maintain the voltage amplitude of drive module output high limit drive signal, thereby make H bridge high limit MOS pipe work in the low resistance on-state, show the conduction loss who has reduced H bridge high limit MOS pipe, the life of H bridge high limit MOS pipe has been improved, burn out of H bridge high limit MOS pipe has been avoided to a certain extent.
Optionally, the charge pump circuit includes a second tank circuit and a control circuit, and the control circuit is configured to control the second tank circuit to periodically charge the first tank circuit;
the first output end of the second energy storage circuit is connected with the first end of the first energy storage circuit;
the first end of the first energy storage circuit is also connected with the input end of the driving module;
the second output end of the second energy storage circuit is connected with the common end of the control circuit, the first end of the control circuit is grounded, and the second end of the control circuit is grounded and connected with the second end of the first energy storage circuit;
the common terminal of the control circuit is periodically switched between being connected with the first terminal of the control circuit or being connected with the second terminal of the control circuit.
By adopting the technical scheme, the first output end of the second energy storage circuit is connected with the first end of the first energy storage circuit, when the common end of the control circuit is connected with the first end of the control circuit, the second output end of the second energy storage circuit is grounded, and the second energy storage circuit is charged for storing energy; when the common end of the control circuit is connected with the second end of the control circuit, the second output end of the second energy storage circuit is connected with the second end of the first energy storage circuit to form a loop, and the second energy storage circuit discharges, so that the first energy storage circuit is charged.
Optionally, the second tank circuit comprises a first diode D1, a second diode D2, and a first capacitor C1; wherein, the first and the second end of the pipe are connected with each other,
the anode of the first diode D1 is connected with a first power VCC1, the cathode of the first diode D1 is connected with the anode of the second diode D2 and the first end of the first capacitor C1 respectively, the cathode of the second diode D2 is connected with the first output end of the second energy storage circuit, and the second end of the first capacitor C1 is connected with the second output end of the second energy storage circuit.
By adopting the above technical scheme, when the second output terminal of the second tank circuit is grounded, the first power supply VCC1 charges the first capacitor C1, the first end of the first capacitor C1 is a positive electrode, and the second end of the first capacitor C1 is a negative electrode; then, when the second output terminal of the second energy storage circuit is connected to the second terminal of the first energy storage circuit, the voltage at the second terminal of the first energy storage circuit is superimposed with the voltage at the two terminals of the first capacitor C1, so as to raise the voltage at the first terminal of the first capacitor C1, the first diode D1 is turned off, the second diode D2 is turned on, and the charge stored in the first capacitor C1 is prevented from flowing to the first power source VCC1, and the charge stored in the first capacitor C1 is charged into the first energy storage circuit through the second diode D2.
Optionally, the first diode D1 and the second diode D2 are both schottky diodes.
Optionally, the control circuit includes a microcontroller circuit and a switch circuit; the microcontroller circuit is used for outputting a control signal; the switch circuit is used for receiving the control signal and periodically switching the connection state of the common end of the control circuit according to the control signal.
Optionally, the microcontroller circuit includes a pulse signal generator, and an output end of the pulse signal generator is connected to the control end of the switch circuit.
Optionally, the switch circuit includes a transistor VT and a relay, a base of the transistor VT is connected to a control end of the switch circuit, a collector of the transistor VT is connected to a first power source VCC2, an emitter of the transistor VT is connected to one end of the relay magnet exciting coil KM, and the other end of the relay magnet exciting coil KM is grounded; one end of the relay normally open contact KM-1 is connected with the common end of the control circuit, and the other end of the relay normally open contact KM-1 is connected with the second end of the control circuit; one end of the relay normally-closed contact KM-2 is connected with the common end of the control circuit, and the other end of the relay normally-open contact KM-2 is connected with the first end of the control circuit.
By adopting the technical scheme, when the control signal is at a high level, the triode VT is conducted, the excitation coil KM of the relay is electrified, so that the normally open contact KM-1 of the relay is closed, the normally closed contact KM-2 of the relay is disconnected, and the common end of the switch circuit is connected with the second end of the control circuit; when the control signal is in a low level, the triode VT is cut off, the excitation coil KM of the relay loses power, so that the normally open contact KM-1 of the relay is disconnected, the normally closed contact KM-2 of the relay is closed, and the public end of the switch circuit is connected with the first end of the second end of the control circuit.
Optionally, the driving module includes a driving chip U, a first resistor R1 and a second resistor R2;
one end of the first resistor R1 is connected to the high-side gate drive output HO of the bridge drive chip U, and the other end of the first resistor R1 is used for outputting a high-side drive signal;
one end of the second resistor R2 is connected to the low-side gate driving output LO of the driver chip U, and the other end of the second resistor R2 is used for outputting a low-side driving signal.
By adopting the technical scheme, the situation that surrounding components are broken down due to the fact that the switching speed of the MOS transistor is too high can be avoided to a certain extent by the aid of the first resistor R1 and the second resistor R2.
In a second aspect, the present application provides an H-bridge driving method based on a charge pump, which adopts the following technical scheme:
an H-bridge driving method based on a charge pump is applied to the H-bridge driving circuit in the first aspect, and includes:
acquiring an enabling signal;
outputting a high-side driving signal and a control signal based on the enabling signal, wherein the high-side driving signal is used for conducting a high-side MOS (metal oxide semiconductor) tube of an H bridge;
the control signal is used for controlling the charge pump circuit to periodically charge the first energy storage circuit.
In a third aspect, the present application provides a bridge inverter, which adopts the following technical scheme:
a bridge inverter comprising an H-bridge driver circuit as in the first aspect above.
In summary, the present application includes at least the following beneficial effects:
1. the purpose of setting up charge pump circuit, first tank circuit and drive module is, charge pump circuit charges for first tank circuit periodically, make first tank circuit to the drive module after discharging, can in time be charged by charge pump circuit, through second condenser C2 through repeated charging and discharging, maintain the voltage amplitude of drive module output high limit drive signal, thereby make the high limit MOS pipe of H bridge work in the low resistance on-state, show the turn-on loss that has reduced the high limit MOS pipe of H bridge, the life of the high limit MOS pipe of H bridge has been improved, the burnout of the high limit MOS pipe of H bridge has been avoided to a certain extent.
Drawings
FIG. 1 is a block diagram of an H-bridge driver circuit according to an embodiment of the present disclosure;
FIG. 2 is a schematic circuit diagram of an H-bridge driving circuit according to an embodiment of the present disclosure
FIG. 3 is a schematic diagram of a circuit configuration of a switching circuit according to an embodiment of the present application;
fig. 4 is a schematic flow chart of an H-bridge driving method according to an embodiment of the present application.
Description of the reference numerals: 100. a charge pump circuit; 110. a second tank circuit; 120. a control circuit; 121. a microcontroller circuit; 122. a switching circuit; 200. a first tank circuit; 300. a drive module; 400. an H-bridge circuit.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to fig. 1-4 and the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The H-bridge circuit 400 comprises a first MOS transistor Q1, a second MOS transistor Q2, a third MOS transistor Q3 and a fourth MOS transistor Q4; a source of the first MOS transistor Q1 is connected to a drain of the second MOS transistor Q2 and to a first output terminal of the H-bridge circuit 400, a source of the third MOS transistor Q3 is connected to a drain of the fourth MOS transistor Q4 and to a first output terminal of the H-bridge circuit 400, and a drain of the first MOS transistor Q1 is connected to a drain of the third MOS transistor and to a driving power supply VCC4, a driving power supply VCC4, or an adjustable current source; and the source electrode of the second MOS tube is connected with the source electrode of the fourth MOS tube and is grounded.
The first MOS transistor Q1 and the third MOS transistor Q3 are the high side of the H-bridge circuit 400, and the second MOS transistor Q2 and the fourth MOS transistor Q4 are the low side of the H-bridge; when the H-bridge circuit 400 works, when the first MOS transistor Q1 and the fourth MOS transistor Q4 are turned on simultaneously, the second MOS transistor Q2 and the third MOS transistor Q3 are turned off simultaneously; when the first MOS transistor Q1 and the fourth MOS transistor Q4 are turned off at the same time, the second MOS transistor Q2 and the third MOS transistor Q3 are turned on at the same time.
The high limit MOS pipe grid drive voltage of common H bridge drive circuit output can be along with bootstrap capacitor's the decline of discharging, lead to high limit MOS pipe conduction channel on-resistance to rise, thereby showing the conduction loss that has improved the high limit MOS pipe of H bridge, reduce the life of the high limit MOS pipe of H bridge, and still make high limit MOS pipe burn out easily under the heavy current condition, and the electric charge amount of the storage of bootstrap capacitor is when releasing to the certain degree, will make high limit MOS pipe turn-off, can't maintain lasting of high limit MOS pipe and switch on. Therefore, the application provides an H-bridge driving circuit, a driving method and a driving device based on a charge pump.
The embodiment of the invention discloses an H-bridge driving circuit based on a charge pump.
As shown in fig. 1 and fig. 2, an H-bridge driving circuit based on a charge pump includes a charge pump circuit 100, a first tank circuit 200 connected to the charge pump circuit 100, and a driving module 300 connected to the first tank circuit 200; the charge pump circuit 100 is used for periodically charging the first tank circuit 200; the driving module 300 is configured to output a high-side driving signal, where the high-side driving signal is used to turn on a high-side MOS transistor of an H bridge; the first tank circuit 200 is used to maintain the voltage amplitude of the high-side driving signal.
In this embodiment, the first tank circuit 200 includes a second capacitor C2, the charge pump circuit 100 periodically charges the second capacitor C2, the second capacitor C2 can be charged by the charge pump circuit 100 in time after discharging the driving module 300, the second capacitor C2 maintains the voltage amplitude of the high-side driving signal output by the driving module 300 through repeated charging and discharging, and it should be noted that the frequency of the charge pump circuit 100 periodically charging the second capacitor C2 is manually set according to the capacitance of the second capacitor C2 in combination with historical experience.
It should be noted that, when the H-bridge circuit 400 is driven to operate, two H-bridge driving circuits need to be provided, the circuit structures of the two H-bridge driving circuits are the same, and the two H-bridge driving circuits are symmetrically arranged on two sides of the H-bridge circuit 400.
As shown in fig. 2, as an embodiment of the charge pump circuit 100, the charge pump circuit 100 includes a second tank circuit 110 and a control circuit 120, the control circuit 120 is configured to control the second tank circuit 110 to periodically charge a second capacitor C2;
a first output terminal of second tank circuit 110 is connected to a first terminal of a second capacitor C2;
the first end of the second capacitor C2 is also connected to the input of the driving module 300;
a second output terminal of the second capacitor C2 is connected to the common terminal of the control circuit 120, a first terminal of the control circuit 120 is grounded, and a second terminal of the control circuit 120 is grounded and connected to a second terminal of the second capacitor C2;
the common terminal of the control circuit 120 is periodically switched between being connected to the first terminal of the control circuit 120 or being connected to the second terminal of the control circuit 120.
In this embodiment, the first output terminal of the second energy-storing circuit 110 is connected to the first terminal of the second capacitor C2, when the common terminal of the control circuit 120 is connected to the first terminal of the control circuit 120, the second output terminal of the second energy-storing circuit 110 is grounded, and the second energy-storing circuit 110 stores energy by charging; when the common terminal of the control circuit 120 is connected to the second terminal of the control circuit 120, the second output terminal of the second tank circuit 110 is connected to the second terminal of the second capacitor C2 to form a loop, and the second tank circuit 110 discharges, thereby charging the first capacitor C1.
As an embodiment of the second tank circuit 110, the second tank circuit 110 includes a first diode D1, a second diode D2, and a first capacitor C1; wherein the content of the first and second substances,
the anode of the first diode D1 is connected to a first power source VCC1, the cathode of the first diode D1 is connected to the anode of the second diode D2 and the first end of the first capacitor C1, respectively, the cathode of the second diode D2 is connected to the first output terminal of the second tank 110, and the second end of the first capacitor C1 is connected to the second output terminal of the second tank 110.
The first diode D1 and the second diode D2 are schottky diodes.
In this embodiment, when the second output terminal of the second tank circuit 110 is grounded, the first power VCC1 charges the first capacitor C1, the first terminal of the first capacitor C1 is positive, and the second terminal of the first capacitor C1 is negative; then, when the second output terminal of the second tank circuit 110 is connected to the second terminal of the second capacitor C2, the voltage at the second terminal of the second capacitor C2 is superimposed on the voltage at the two terminals of the first capacitor C1, so as to raise the voltage at the first terminal of the first capacitor C1, the first diode D1 is turned off, the second diode D2 is turned on, thereby preventing the charge stored in the first capacitor C1 from flowing to the first power source VCC1, and the charge stored in the first capacitor C1 is charged to the second capacitor C2 through the second diode D2.
As shown in fig. 2 and 3, as an embodiment of the control circuit 120, the control circuit 120 includes a microcontroller circuit 121 and a switch circuit 122; the microcontroller circuit 121 is configured to output a control signal; the switch circuit 122 is configured to receive the control signal and periodically switch the connection state of the common terminal of the control circuit 120 according to the control signal.
In this embodiment, the switch circuit 122 periodically switches the connection state of the common terminal of the control circuit 120 according to the control signal, and connects the second terminal of the first capacitor C1 to ground or the second terminal of the first capacitor C1 to the second terminal of the second capacitor C2.
The microcontroller circuit 121 comprises a pulse signal generator, the output of which is connected to the control terminal of the switching circuit 122.
In this embodiment, the pulse signal generator may be a square wave generator, and the output square wave signal frequency is generally several hundred hertz to several kilohertz.
As shown in fig. 3, as an embodiment of the switching circuit 122, the switching circuit 122 includes a transistor VT and a relay, a base of the transistor VT is connected to a control end of the switching circuit 122, a collector of the transistor VT is connected to a first power source VCC2, an emitter of the transistor VT is connected to one end of the relay magnet coil KM, and the other end of the relay magnet coil KM is grounded; one end of the relay normally open contact KM-1 is connected with the common end of the control circuit 120, and the other end of the relay normally open contact KM-1 is connected with the second end of the control circuit 120; one end of the normally closed relay contact KM-2 is connected with the common end of the control circuit 120, and the other end of the normally open relay contact KM-2 is connected with the first end of the control circuit 120.
In the above embodiment, when the control signal is at a high level, the transistor VT is turned on, the excitation coil KM of the relay is powered on, the normally open contact KM-1 of the relay is closed, the normally closed contact KM-2 of the relay is disconnected, the common terminal of the switch circuit 122 is connected to the second terminal of the control circuit 120, the second terminal of the first capacitor C1 is connected to the second terminal of the second capacitor C2, and the first capacitor C1 charges the second capacitor C2; when the control signal is at a low level, the triode VT is turned off, the relay excitation coil KM is de-energized, the relay normally-open contact KM-1 is opened, the relay normally-closed contact KM-2 is closed, the common end of the switch circuit 122 is connected with the first end of the second end of the control circuit 120, the second end of the first capacitor C1 is grounded, and the first power supply VCC1 charges the first capacitor C1.
It should be noted that this embodiment is only one example of the switch circuit 122, and the relay in this application includes, but is not limited to, a mechanical relay, and may also be a solid-state relay composed of a microelectronic circuit, a discrete electronic device, and a power electronic power device, for example, a push-pull SPDT solid-state relay and a photodiode array SPDT solid-state relay.
As shown in fig. 2, as an embodiment of the driving module 300, the driving module 300 includes a driving chip U, wherein the driving chip U may adopt an IR/S21XX series chip, such as an IR2101 chip;
a power supply terminal VCC of the driving chip U is connected with a third power supply VCC3, a common terminal COM of the driving chip U is grounded, a high-voltage side floating power supply input terminal VB of the driving chip U is respectively connected with a first end of a second capacitor C2 and a cathode of a second diode D2, and a high-voltage side floating power supply common terminal VS of the driving chip U is respectively connected with a second end of the second capacitor C2 and a source of a high-side MOS (a first MOS Q1 or a third MOS Q3) of the H-bridge circuit 400;
the driving module 300 further includes a first resistor R1 and a second resistor R2, one end of the first resistor R1 is connected to the high-side gate driving output HO of the driving chip U, and the other end of the first resistor R1 is connected to the gate of the high-side MOS transistor of the H-bridge circuit 400, for outputting a high-side driving signal; one end of the second resistor R2 is connected to the low-side gate driving output LO of the driver chip U, and the other end of the second resistor R2 is connected to the gate of the low-side MOS transistor of the H-bridge circuit 400, and is configured to output a low-side driving signal.
In the above embodiment, when the driving module 300 outputs the high-side driving signal, the high-side floating power input terminal VB of the driver chip U is connected to the high-side gate driving output terminal HO of the driver chip U, and therefore the voltage of the first terminal of the second capacitor C2 determines the voltage of the high-side driving signal output by the driving module 300.
In the above embodiment, by providing the first resistor R1 and the second resistor R2, it is possible to avoid the situation that the switching rate of the MOS transistor is too fast, which may cause breakdown of the surrounding components.
For the sake of understanding of the present application, the H-bridge driving power VCC4 is 24V, and the first power VCC1 is 12V:
when the high-side MOS tube of the H bridge is cut off and the low-side MOS tube of the H bridge is conducted, the second end of the second capacitor C2 is grounded, at the moment, the first power supply VCC1 charges the second capacitor C2 through the first diode D1 and the second diode D2, the voltage drop on the first diode D1 and the second diode D2 is removed, and the voltage of the end, connected with the high-side floating power supply input end VB, of the second capacitor C2 of the driving chip U is about 11.5V after the charging is finished and is far greater than the gate-source conducting voltage of the high-side MOS tube of the H bridge;
when the high-side MOS tube of the H bridge is conducted and the low-side MOS tube of the H bridge is cut off, neglecting the conduction voltage drop of the high-side MOS tube of the H bridge, and the voltage of the end, connected with the common end VS of the high-voltage side floating power supply of the driving chip U, of the second capacitor C2 is about 24V; meanwhile, the pulse signal generator outputs a square wave signal to control the relay to alternately conduct between the second end of the first capacitor C1 and the ground and the second end of the second capacitor C2:
when the second terminal of the first capacitor C1 is grounded, the first power VCC1 charges the first capacitor C1 through the first diode D1, and the voltage across the first capacitor C1 after the first capacitor C1 is fully charged is about 11.8V;
when the second terminal of the first capacitor C1 is connected to the second terminal of the second capacitor C2, the voltage of the cathode of the first diode D1 is raised to 35.8V (24V + 11.8V) by the voltage of the second terminal of the second capacitor C2, and at this time, the first capacitor C1 charges the second capacitor C2 through the second diode D2;
in the continuous conduction process of the H-bridge high-side MOS tube, the pulse signal generator controls the relay to alternately conduct the second end of the first capacitor C1, the ground and the second end of the second capacitor C2, so that the voltage at the two ends of the second capacitor C2 is kept above 11V and is far greater than the grid-source voltage of the conducted MOS tube, and the H-bridge high-side MOS tube is ensured to continuously work in a good low-resistance conduction state.
The embodiment of the application also discloses an H-bridge driving method based on the charge pump, and the H-bridge driving method is applied to the H-bridge driving circuit.
As shown in fig. 4, an H-bridge driving method based on a charge pump is applied to the H-bridge driving circuit in the first aspect, and the H-bridge driving method includes:
s1, acquiring an enabling signal;
specifically, the H-bridge circuit 400 needs two H-bridge driver circuits, the enable signal is sent by human control, and only one of the H-bridge driver circuits can obtain the enable signal at the same time.
S2, outputting a high-side driving signal and a control signal based on the enabling signal, wherein the high-side driving signal is used for conducting a high-side MOS tube of the H bridge;
the control signal is used to control the charge pump circuit 100 to periodically charge the first tank circuit 200.
Specifically, the voltage of the high-side driving signal is determined by the voltage at the two ends of the first energy storage circuit 200, and the first energy storage circuit 200 is periodically charged by controlling the charge pump circuit 100, so that the voltage at the two ends of the first energy storage circuit 200 is maintained at a higher level, and finally the voltage of the high-side driving signal is maintained at a higher level, so that the high-side MOS transistor of the H bridge works in a low-resistance conduction state, the heat productivity of the high-side MOS transistor of the H bridge during working is reduced, and the service life of the high-side MOS transistor of the H bridge is prolonged.
The embodiment of the application also discloses a bridge type inverter.
A bridge inverter comprises the H-bridge driving circuit.
In the above embodiment, the H-bridge high-side MOS transistor in the bridge inverter can be always in the low-resistance conduction state, so that heat generation of the H-bridge high-side MOS transistor is reduced, and the service life of the H-bridge high-side MOS transistor is prolonged. The high-side MOS tube on one side of the H bridge can be continuously conducted, so that current commutation is reduced, and the utilization efficiency of the driving power VCC4 can be effectively improved for an inductive load; for the load of the semiconductor refrigerating device, the refrigerating/heating speed can be effectively improved.
It should be noted that, in the foregoing embodiments, descriptions of the respective embodiments have respective emphasis, and reference may be made to relevant descriptions of other embodiments for parts that are not described in detail in a certain embodiment.
In the several embodiments provided in the present invention, it should be understood that the circuits, methods, and apparatuses provided may be implemented in other ways. For example, the circuit embodiments described above are merely illustrative; for example, a circuit may be divided into only one logic function, and another division may be implemented in practice.
The above embodiments are preferred embodiments of the present application, and the protection scope of the present application is not limited by the above embodiments, so: all equivalent changes made according to the structure, shape and principle of the present application shall be covered by the protection scope of the present application.

Claims (10)

1. The utility model provides a H bridge drive circuit based on charge pump which characterized in that: the circuit comprises a charge pump circuit (100), a first energy storage circuit (200) connected with the charge pump circuit (100), and a driving module (300) connected with the first energy storage circuit (200);
the charge pump circuit (100) is used for periodically charging the first tank circuit (200);
the driving module (300) is used for outputting a high-side driving signal, and the high-side driving signal is used for conducting a high-side MOS (metal oxide semiconductor) tube of an H bridge;
the first tank circuit (200) is configured to maintain a voltage magnitude of the high-side drive signal.
2. The charge pump-based H-bridge driver circuit of claim 1, wherein: the charge pump circuit (100) comprises a second energy storage circuit (110) and a control circuit (120), wherein the control circuit (120) is used for controlling the second energy storage circuit (110) to periodically charge the first energy storage circuit (200);
a first output terminal of the second tank circuit (110) is connected with a first terminal of the first tank circuit (200);
the first end of the first energy storage circuit (200) is also connected with the input end of the driving module (300);
a second output end of the second energy storage circuit (110) is connected with a common end of the control circuit (120), a first end of the control circuit (120) is grounded, and a second end of the control circuit (120) is grounded and is connected with a second end of the first energy storage circuit (200);
the common terminal of the control circuit (120) is periodically switched between being connected with the first terminal of the control circuit (120) or being connected with the second terminal of the control circuit (120).
3. The H-bridge driver circuit based on charge pump according to claim 2, wherein: the second tank circuit (110) comprises a first diode D1, a second diode D2, and a first capacitor C1; wherein the content of the first and second substances,
the anode of the first diode D1 is connected with a first power VCC1, the cathode of the first diode D1 is connected with the anode of the second diode D2 and the first end of the first capacitor C1 respectively, the cathode of the second diode D2 is connected with the first output end of the second energy storage circuit (110), and the second end of the first capacitor C1 is connected with the second output end of the second energy storage circuit (110).
4. The H-bridge driving circuit based on the charge pump as claimed in claim 3, wherein: the first diode D1 and the second diode D2 are schottky diodes.
5. The H-bridge driver circuit based on charge pump according to claim 2, wherein: the control circuit (120) comprises a microcontroller circuit (121) and a switching circuit (122); the microcontroller circuit (121) is configured to output a control signal; the switch circuit (122) is used for receiving the control signal and periodically switching the connection state of the common terminal of the control circuit (120) according to the control signal.
6. The H-bridge driving circuit based on the charge pump as claimed in claim 5, wherein: the microcontroller circuit (121) comprises a pulse signal generator, and the output end of the pulse signal generator is connected with the control end of the switch circuit (122).
7. The H-bridge driving circuit based on the charge pump as claimed in claim 5, wherein: the switching circuit (122) comprises a triode VT and a relay, the base electrode of the triode VT is connected with the control end of the switching circuit (122), the collector electrode of the triode VT is connected with a first power supply VCC2, the emitter electrode of the triode VT is connected with one end of the relay magnet exciting coil KM, and the other end of the relay magnet exciting coil KM is grounded; one end of the relay normally open contact KM-1 is connected with the common end of the control circuit (120), and the other end of the relay normally open contact KM-1 is connected with the second end of the control circuit (120); one end of the relay normally-closed contact KM-2 is connected with the common end of the control circuit (120), and the other end of the relay normally-open contact KM-2 is connected with the first end of the control circuit (120).
8. A charge pump based H-bridge driver circuit according to any of claims 1-7, characterized in that: the driving module (300) includes a driving chip U, a first resistor R1 and a second resistor R2;
one end of the first resistor R1 is connected with a high-side gate driving output end HO of the driving chip U, and the other end of the first resistor R1 is used for outputting a high-side driving signal;
one end of the second resistor R2 is connected to the low-side gate driving output LO of the driver chip U, and the other end of the second resistor R2 is used for outputting a low-side driving signal.
9. An H-bridge driving method based on a charge pump, applied to the H-bridge driving circuit of any one of claims 1 to 8, characterized in that: the H-bridge driving method comprises the following steps:
acquiring an enabling signal;
outputting a high-side driving signal and a control signal based on the enabling signal, wherein the high-side driving signal is used for conducting a high-side MOS (metal oxide semiconductor) tube of an H bridge;
the control signal is used for controlling the charge pump circuit (100) to periodically charge the first tank circuit (200).
10. A bridge inverter comprising the H-bridge driver circuit according to any one of claims 1 to 8.
CN202210728234.2A 2022-06-25 2022-06-25 H-bridge driving circuit, driving method and device based on charge pump Active CN115118153B (en)

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