CN115110049A - Spiral wave plasma quartz glass tube inner wall coating device - Google Patents
Spiral wave plasma quartz glass tube inner wall coating device Download PDFInfo
- Publication number
- CN115110049A CN115110049A CN202210739991.XA CN202210739991A CN115110049A CN 115110049 A CN115110049 A CN 115110049A CN 202210739991 A CN202210739991 A CN 202210739991A CN 115110049 A CN115110049 A CN 115110049A
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- China
- Prior art keywords
- vacuum
- quartz tube
- conveying rod
- wave plasma
- glass tube
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/40—Solar thermal energy, e.g. solar towers
Abstract
The invention discloses a spiral wave plasma quartz glass tube inner wall coating device. The sputtering target comprises a base, wherein a vacuum quartz tube and a permanent magnet matched with the vacuum quartz tube are placed on the base, a spiral antenna is arranged on one side of the vacuum quartz tube, and a sputtering target plate is arranged on the other side of the vacuum quartz tube; the spiral antenna is connected with a radio frequency power system; the sputtering target plate is connected with a conveying rod, the conveying rod is connected with a driving device, and the driving device drives the conveying rod to rotate and drive the conveying rod to move along the axial direction of the vacuum quartz tube. The film coating device can replace the sputtering target plates with different material components according to different film coating requirements, thereby realizing the coating of various types of films.
Description
Technical Field
The invention relates to a spiral wave plasma quartz glass tube inner wall coating device, and belongs to the technical field of spiral wave plasma sputtering deposition.
Background
The quartz tube has the advantages of low thermal expansion coefficient, high temperature resistance, corrosion resistance, good chemical stability, good light transmittance and the like, and is widely applied to the processing and manufacturing fields of equipment and elements such as light sources, communication, electronics, new energy, medical treatment, chemical industry, semiconductors and the like. The coating of the functional film in the quartz tube is the key to improve the performance and the applicability of the quartz tube, such as: the corrosion resistance of the quartz tube to strong alkaline substances is improved by coating the corrosion-resistant film; by coating the conductive film, direct electric heating in the quartz tube can be realized, and the reaction temperature control precision is improved; the coating is used for increasing transparency, so that the solar energy absorption efficiency of the heat collecting pipe can be improved.
The traditional method for coating the inner wall of the quartz tube has obvious disadvantages. For example, for evaporation coating techniques, the film thickness profile is affected by the vapor concentration gradient; for electroplating techniques, the film quality is challenged by the uniformity of the electric field and the concentration of the solution. The dipping film-forming method is faced with the influence of curved surface and gravity condition on the uniformity of the ultrathin liquid film. Methods such as spin coating and ink jet printing, while improving the uniformity of thin films, are only suitable for the preparation of thicker coatings. How to coat a uniform functional film on the inner wall of a quartz tube with a large length-diameter ratio is a bottleneck problem to be solved urgently.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a spiral wave plasma quartz glass tube inner wall coating device which can uniformly and efficiently coat the inner wall of a quartz tube aiming at the quartz tube with a large length-diameter ratio.
The invention is realized by the following technical scheme:
a spiral wave plasma quartz glass tube inner wall coating device comprises a base, wherein a vacuum quartz tube and a permanent magnet matched with the vacuum quartz tube are placed on the base, a spiral antenna is arranged on one side of the vacuum quartz tube, and a sputtering target plate is arranged on the other side of the vacuum quartz tube; the spiral antenna is connected with a radio frequency power system; the sputtering target plate is connected with a conveying rod, the conveying rod is connected with a driving device, and the driving device drives the conveying rod to rotate and drive the conveying rod to move along the axial direction of the vacuum quartz tube.
One side of the vacuum quartz tube is connected with an air inlet system through an air inlet flange plate.
The spiral wave plasma quartz glass tube inner wall coating device is characterized in that the air inlet system comprises an air bottle, a pressure reducing valve, a mass flow meter and an air inlet valve which are sequentially connected, and the air inlet valve is connected with the air inlet flange plate.
According to the spiral wave plasma quartz glass tube inner wall coating device, the joint of the air inlet flange plate and the vacuum quartz tube is sealed by the high-temperature fluorine rubber ring.
According to the spiral wave plasma quartz glass tube inner wall coating device, the spiral antenna is connected with the radio frequency power system through the coaxial cable, and the radio frequency power system comprises the radio frequency power source and the matcher which are connected with each other.
The spiral wave plasma quartz glass tube inner wall coating device is characterized in that the transmission rod is connected with a filter and a direct current stabilized voltage power supply.
According to the spiral wave plasma quartz glass tube inner wall coating device, the other side of the vacuum quartz glass tube is connected with a vacuum system through a flange plate.
The spiral wave plasma quartz glass tube inner wall coating device is characterized in that the vacuum system comprises a vacuum gauge, an air suction valve, a turbo molecular pump and a mechanical pump which are sequentially connected.
The invention achieves the following beneficial effects:
the film coating device can replace the sputtering target plates with different material components according to different film coating requirements, thereby realizing the coating of various types of films. The radio frequency power system reasonably optimizes the sputtering rate of the target plate according to different coating requirements and target plate materials by regulating and controlling the density of the helicon wave plasma and the ion energy incident to the sputtering target plate, and realizes the rapid deposition of the film. The modulation of the axial reciprocating speed and the rotation angular speed of the stainless steel vacuum transmission rod is combined, and the effective control of the thickness of the film is realized under the condition of ensuring the uniformity of the film.
Drawings
FIG. 1 is a schematic structural diagram of the present invention.
In the figure: 1. the device comprises a base, 2, a permanent magnet, 3, a support, 4, a vacuum quartz tube, 5, an air inlet flange plate, 6, an air bottle, 7, a pressure reducing valve, 8, a flowmeter, 9, an air inlet valve, 10, a spiral antenna, 11, a radio frequency power source, 12, a matcher, 13, a quartz tube to be processed, 14, a sputtering target plate, 15, a transmission rod, 16, a filter, 17, a direct current stabilized voltage power supply, 18, a flange plate, 19, a vacuum gauge, 20, an air extraction valve, 21, a turbo molecular pump, 22 and a mechanical pump.
Detailed Description
The invention is further described below. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
As shown in the figures, the quartz tube inner wall coating device provided by the invention comprises a base 1, wherein the base 1 is provided with: and the four groups of annular neodymium iron boron permanent magnets 2 are used for providing an axial uniform magnetic field required by exciting and restraining the helicon wave plasma. Two sets of supports 3 are used for fixing the vacuum quartz tube 4.
The left end of the vacuum quartz tube 4 is connected with an air inlet flange 5, the joint is sealed by a high temperature resistant fluorine rubber ring, and the air inlet flange 5 is connected with an air inlet system through a stainless steel cutting sleeve. The air intake system includes: an argon gas cylinder 6 for supplying argon gas required for exciting the argon helicon wave plasma, a pressure reducing valve 7, a flow meter 8 for argon gas flow control, and a gas inlet valve 9.
The left side of the vacuum quartz tube 4 is wound with a red copper half-wave spiral antenna 10, and the spiral antenna 10 is connected with a radio frequency power system through a coaxial cable and used for exciting high-density argon spiral wave plasma beam current in the vacuum quartz tube 4. The radio frequency power system comprises: a radio frequency power source 11 (2 kW maximum power, frequency 13.56 MHz) and a matcher 12. The sputtering rate of the target plate is reasonably optimized according to different coating requirements and target plate materials by respectively regulating and controlling the density of the spiral wave plasma by the radio frequency power source 11 and the ion energy incident to the sputtering target plate 14 by the direct current stabilized power supply 17, and the rapid deposition of the film is realized.
The quartz tube 13 to be treated is positioned at the right side of the vacuum quartz tube 4, the cylindrical sputtering target plate 14 is positioned in the quartz tube 13 to be treated, one end of the cylindrical sputtering target plate faces to the helicon wave plasma, and a large amount of raw material particles for coating the thin film on the inner wall of the quartz tube 13 to be treated can be generated by sputtering under the action of the plasma. The other end of the sputtering target plate 14 is connected to a stainless steel vacuum transfer rod 15 by a bolt. The stainless steel vacuum transmission rod 15 is integrated with an electrode driving module, on one hand, the electrode driving module can move along the axial direction of the vacuum quartz tube 4, and on the other hand, the electrode driving module can rotate around a shaft. The other end of the stainless steel vacuum transmission rod 15 is connected with a filter 16 and a direct current stabilized power supply 17, the filter 16 can avoid the influence of plasma radio frequency signals on the direct current stabilized power supply 17, and the direct current stabilized power supply 17 can apply negative bias voltage to the sputtering target plate 14 for regulating and controlling the energy of sputtering ions. By modulating the power and the bias voltage of the target plate and matching with the reciprocating rotary motion control of the transmission rod 15, the uniform and high-quality film can be quickly coated on the inner wall of the quartz tube 13 to be processed. The sputtering target plate 14 with different material components can be replaced according to different coating requirements, and the coating of various types of films is realized.
The 4 right ports of vacuum quartz tube are connected with ring flange 18, and the junction adopts high temperature resistant fluorine rubber ring sealed equally, and the flange mouth on the ring flange 18 is used for installing stainless steel vacuum transfer rod 15, and the extraction opening is connected with vacuum system, and vacuum system contains: the vacuum gauge 19, the extraction valve 20, the turbo molecular pump 21 and the mechanical pump 22 can provide a stable vacuum environment for the operation of the helicon wave plasma.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, it is possible to make various improvements and modifications without departing from the technical principle of the present invention, and those improvements and modifications should be considered as the protection scope of the present invention.
Claims (8)
1. A spiral wave plasma quartz glass tube inner wall coating device comprises a base, wherein a vacuum quartz tube and a permanent magnet matched with the vacuum quartz tube are placed on the base; the spiral antenna is connected with a radio frequency power system; the sputtering target plate is connected with a conveying rod, the conveying rod is connected with a driving device, and the driving device drives the conveying rod to rotate and drive the conveying rod to move along the axial direction of the vacuum quartz tube.
2. The apparatus as claimed in claim 1, wherein the vacuum quartz tube is connected to an air inlet system at one side thereof via an air inlet flange.
3. The apparatus as claimed in claim 2, wherein the gas inlet system comprises a gas cylinder, a pressure reducing valve, a flow meter and a gas inlet valve, the gas inlet valve is connected with the gas inlet flange.
4. The spiral wave plasma quartz glass tube inner wall coating device according to claim 2 or 3, wherein the connection part of the gas inlet flange and the vacuum quartz glass tube is sealed by a high temperature fluorine rubber ring.
5. The apparatus as claimed in claim 1, wherein the helical antenna is connected to the rf power system via a coaxial cable, and the rf power system comprises an rf power source and a matching unit connected to each other.
6. The apparatus as claimed in claim 1, wherein the transmission rod is connected to a filter and a DC voltage regulator.
7. The apparatus as claimed in claim 1, wherein the vacuum system is connected to the other side of the vacuum quartz tube via a flange.
8. The apparatus as claimed in claim 7, wherein the vacuum system comprises a vacuum gauge, an air extraction valve, a turbo-molecular pump and a mechanical pump connected in sequence.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210739991.XA CN115110049A (en) | 2022-06-28 | 2022-06-28 | Spiral wave plasma quartz glass tube inner wall coating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210739991.XA CN115110049A (en) | 2022-06-28 | 2022-06-28 | Spiral wave plasma quartz glass tube inner wall coating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115110049A true CN115110049A (en) | 2022-09-27 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210739991.XA Pending CN115110049A (en) | 2022-06-28 | 2022-06-28 | Spiral wave plasma quartz glass tube inner wall coating device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115110049A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06232055A (en) * | 1993-02-08 | 1994-08-19 | Yasuhiro Horiike | Helicon-wave plasma treating device |
| US5935391A (en) * | 1994-01-31 | 1999-08-10 | Nissin Electric Co., Ltd. | Method of manufacturing a tube having a film on its inner peripheral surface and apparatus for manufacturing the same |
| US6096176A (en) * | 1994-07-02 | 2000-08-01 | Tokyo Electron Limited | Sputtering method and a sputtering apparatus thereof |
| CN109576665A (en) * | 2018-06-22 | 2019-04-05 | 新奥科技发展有限公司 | A kind of ion source, coating apparatus and film plating process |
-
2022
- 2022-06-28 CN CN202210739991.XA patent/CN115110049A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06232055A (en) * | 1993-02-08 | 1994-08-19 | Yasuhiro Horiike | Helicon-wave plasma treating device |
| US5935391A (en) * | 1994-01-31 | 1999-08-10 | Nissin Electric Co., Ltd. | Method of manufacturing a tube having a film on its inner peripheral surface and apparatus for manufacturing the same |
| US6096176A (en) * | 1994-07-02 | 2000-08-01 | Tokyo Electron Limited | Sputtering method and a sputtering apparatus thereof |
| CN109576665A (en) * | 2018-06-22 | 2019-04-05 | 新奥科技发展有限公司 | A kind of ion source, coating apparatus and film plating process |
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